CN105479026B - A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength - Google Patents
A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength Download PDFInfo
- Publication number
- CN105479026B CN105479026B CN201510915295.XA CN201510915295A CN105479026B CN 105479026 B CN105479026 B CN 105479026B CN 201510915295 A CN201510915295 A CN 201510915295A CN 105479026 B CN105479026 B CN 105479026B
- Authority
- CN
- China
- Prior art keywords
- chemical nickel
- joint
- preheating
- nickel plating
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Powder Metallurgy (AREA)
Abstract
The present invention develops a kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength.On the chemical nickel and gold substrate being cleaned by ultrasonic, with one layer of Nano Silver slurry of screen process press brushing, then pasting chip.Butt joint is preheated, and preheating temperature, insulation a period of time are heated to certain firing rate.After preheating terminates, the middle heating-up time is saved, joint directly is quickly moved into higher temperature environment is sintered, and furnace cooling or is directly removed after being incubated a period of time.The present invention successfully enhances the connection reliability of the Nano Silver joint on chemical nickel plating gold base, technique is simple, and equipment requirement is low while whole sintering time is shortened.
Description
Technical field
The present invention relates to a kind of new-type Nano Silver slurry (or soldering paste) sintering technology, specifically, it is related to and was received in the past
Rice silver paste is difficult on golden (ENIG) substrate of chemical nickel plating of sintering connection, uses new sintering method to realize nano mattisolda
Be reliably connected, belong to the innovative technology in process improving field.
Background technology
In recent years, the nano mattisolda electronics connecting material unleaded as a kind of green, due to outstanding conduction, leading
The advantages that hot property, relatively low sintering temperature and higher temperature in use, received much concern in great-power electronic electrical applications, especially
It is in high-temperature applications.But before by the use of Nano Silver as interconnection material, connected printed circuit board (PCB) (PCB) one
As need to be surface-treated.The pad of chemical nickel plating gold (ENIG) surface treatment, have solderability good, heat-resist, smooth
Many advantages, such as degree height and strong oxidation resistance, meanwhile, ENIG is relatively low compared to electroplated Ni/Au costs, and is led suitable for non-
Logical circuit printed board plating process, it is set to be able to extensive use in PCB surface processing.However, we are in insulated gate bipolar
Transistor (IGBT) chip is interconnected with ENIG substrates it was found that, in sintering Nano Silver joint close to the linkage interface of substrate
Place, a defects of Au-Ag solid solution layer and very poor silver densification can be formed layer, cause to sinter the shear strength of silver-colored joint very
It is low, well below normal use allowed band, averagely only 7.8MPa.The present invention science bad by clarifying its connection effect
Reason, propose, using preheating procedure is increased in existing soldering paste sintering process, to be then quickly moved to the special of high temperature sintering environment
Method, successfully improve the interconnection strength of nano mattisolda and chemical nickel plating gold base.This is great-power electronic power module
Manufacture is laid a good foundation (such as IGBT module).
The content of the invention
Present invention mainly solves nanometer silver paste chemical nickel plating gold base interconnection problems, there is provided a kind of simple possible
Process improving method.Sintering method is improved by the present invention, using warm table and screen printing apparatus, realized in chemical nickel auri
Nano Silver joint is reliably connected on plate.
The inventive method technical scheme is as follows：
A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength, is comprised the following steps that：
(1) on the chemical nickel and gold substrate being cleaned by ultrasonic, with one layer of nano mattisolda of screen process press brushing, then
Pasting chip；
(2) butt joint is preheated, and is heated to preheating temperature with certain heating rate, preheating temperature scope is 120-180
DEG C, so as to the organic matter to be volatilized in cold stage in removal nano mattisolda；
(3) after preheating terminates, joint is moved to 260-280 DEG C and is sintered insulation, ensureing what silver paste fully sintered
Simultaneously, it is therefore prevented that the excessive phase counterdiffusion of gold, silver atom and the formation of solid solution layer and defect layer；Then furnace cooling or direct
Remove.
Described soldering paste brushing thickness is preferably 25-50 μm.Pre-heating temperature elevation speed is preferably 4-6 DEG C/min.Preheating insulation
Time is preferably 5-30min.The sintered heat insulating time is 20-30min.
The present invention brushes one layer of nano mattisolda on chemical nickel and gold substrate, then pasting chip.In existing agglomerant
It is innovative in skill to introduce one of preheating procedure, attachment joint is heated to preheating temperature with certain heating rate, when being incubated one section
Between, ensure that the organic matter in low-temperature zone in nano mattisolda can fully volatilize removal；Preheating terminate after, by joint move to compared with
High temperature environment carries out heat preservation sintering, saves the middle heating-up time, so as to while ensureing that silver paste fully sinters, it is therefore prevented that
The excessive phase counterdiffusion of gold, silver atom and the formation of solid solution layer and defect layer, ensure the reliability of joint connection.
The effect of the present invention：
(1) present invention innovatively employs increases by one of preheating procedure in existing soldering paste sintering process, then quick
The specific process of hot environment sintering is moved to, has shortened and has burnt the overall sintering time of nano mattisolda.
(2) present invention when avoiding igbt chip with the interconnection of chemical nickel plating gold base, is being sintered by improving process
The defects of at silver-colored joint interface layer formation, it is successfully that the interconnection average shear of nano mattisolda and chemical nickel plating gold base is strong
Degree is improved to 18.5MPa from 7.8MPa.
(3) nano mattisolda that the present invention uses is the unleaded connecting material of green, and whole process will not pollute.
Brief description of the drawings
Fig. 1：The sintering process method curve of prior art and inventive technique.As seen from the figure, whole sintering process according to
The technology of the present invention, than that will be reduced using the existing technology required time not improved.
Fig. 2：Use the shearing strength of joint Comparative result of gained before and after inventive technique method.As seen from the figure, using this hair
After bright technology, the average shear strength of gained joint brings up to 18.5MPa from 7.8MPa, substantially increases the reliable of joint connection
Property.
Embodiment
The invention provides a kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength.Whole process needs
One screen process press and two warm tables.Increase by one of preheating procedure in existing soldering paste sintering process, be then quickly moved to
Hot environment sinters, and ensure that the reliability for applying the Nano Silver joint on ENIG substrates to connect.Comprise the following steps that：
(1) brush：On the chemical nickel and gold substrate being cleaned by ultrasonic, with one layer of nanometer silver soldering of screen process press brushing
Cream, then mount igbt chip.
(2) preheat：Butt joint is preheated, and is heated to preheating temperature with certain heating rate, insulation a period of time, is ensured
Organic matter volatilization in nano mattisolda removes.
(3) sinter：After preheating terminates, the middle heating-up time is saved, joint directly is quickly moved into higher temperature environment enters
Row heat preservation sintering, then furnace cooling or directly remove.
Example 1
Brushing solder paste thickness is 50 μm, then carries out the pre-heat treatment to the joint that finishes of attachment, heating rate is 5 DEG C/
Min, preheating temperature are 150 DEG C, and the preheating insulation time be 10min, and joint is then quickly moved to 275 DEG C of sintering temperature, guarantor
Furnace cooling after warm 30min.Process curve is as shown in figure 1, the shear strength obtained is as shown in Figure 2.As shown in Figure 2, it is real herein
After using the technology of the present invention in example, the average shear strength of joint brings up to 18.5MPa from 7.8MPa.
Example 2
Brushing solder paste thickness is 25 μm, then carries out the pre-heat treatment to the joint that finishes of attachment, heating rate is 4 DEG C/
Min, preheating temperature are 120 DEG C, and the preheating insulation time be 30min, and joint is then quickly moved to 260 DEG C of sintering temperature, guarantor
Directly removed after warm 25min.
Example 3
Brushing solder paste thickness is 40 μm, then carries out the pre-heat treatment to the joint that finishes of attachment, heating rate is 6 DEG C/
Min, preheating temperature are 180 DEG C, and the preheating insulation time be 5min, and joint is then quickly moved to 280 DEG C of sintering temperature, is incubated
Furnace cooling after 20min.
In summary, only it is preferable several embodiments of the present invention, not technical scope of the invention is made any
Limitation, therefore any subtle modifications, equivalent variations and modifications that every technical spirit according to the present invention is made to above example,
In the range of still falling within technical solution of the present invention.
Claims (3)
- A kind of 1. method for improving nanometer silver paste and chemical nickel plating gold base bonding strength, it is characterised in that step is as follows：(1) on the chemical nickel and gold substrate being cleaned by ultrasonic, with one layer of nano mattisolda of screen process press brushing, brushing thickness For 25-50 μm, then pasting chip；(2) preheating procedure is introduced on the basis of existing process, joint is heated to preheating temperature 120-180 with certain heating rate DEG C, the organic matter in nano mattisolda is removed in cold stage volatilization；(3) after preheating terminates, joint is moved into 260-280 DEG C of progress heat preservation sintering, while ensureing that silver paste fully sinters, Prevent phase counterdiffusion that gold, silver atom is excessive and the formation of solid solution layer and defect layer；Then furnace cooling or directly remove.
- 2. according to the method for claim 1, it is characterized in that the preheating insulation time is 5-30min.
- 3. according to the method for claim 1, it is characterized in that the heat preservation sintering time is 20-30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510915295.XA CN105479026B (en) | 2015-12-09 | 2015-12-09 | A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510915295.XA CN105479026B (en) | 2015-12-09 | 2015-12-09 | A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105479026A CN105479026A (en) | 2016-04-13 |
| CN105479026B true CN105479026B (en) | 2018-01-23 |
Family
ID=55666485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510915295.XA Active CN105479026B (en) | 2015-12-09 | 2015-12-09 | A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105479026B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653627B (en) * | 2016-10-11 | 2019-02-05 | 天津大学 | A kind of nano mattisolda connects the sintering method of naked copper substrate or bonded copper base |
| CN106373954A (en) * | 2016-10-14 | 2017-02-01 | 天津大学 | Sintered IGBT (Insulated Gate Bipolar Transistor) module applying nanometer silver soldering paste and fabrication method of sintered IGBT module |
| CN107731701A (en) * | 2017-09-18 | 2018-02-23 | 全球能源互联网研究院有限公司 | A kind of sintering method of semiconductor devices and the manufacture method of semiconductor devices |
| CN109378309A (en) * | 2018-09-17 | 2019-02-22 | 天津大学 | A kind of nano mattisolda low pressure sintering combined power modular approach |
| CN109623068B (en) * | 2019-01-10 | 2021-02-19 | 哈尔滨工业大学（深圳） | Nano-silver connection method based on multipoint ultrasonic vibration |
| CN110416101A (en) * | 2019-08-07 | 2019-11-05 | 深圳市顺益微电子有限公司 | Use sintering silver paste as the power module copper sheet welding procedure of bonding agent |
| CN113206018B (en) * | 2021-04-23 | 2022-07-08 | 天津工业大学 | Low-temperature large-area uniform sintering method for nano-silver soldering paste |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9260768B2 (en) * | 2005-12-13 | 2016-02-16 | Indium Corporation | Lead-free solder alloys and solder joints thereof with improved drop impact resistance |
| CN101593712B (en) * | 2009-06-26 | 2012-01-04 | 天津大学 | Low-temperature sintering method for high-power chip connection and nano silver paste thickness control device |
| CN105021589B (en) * | 2015-06-18 | 2018-06-26 | 北京航空航天大学 | A kind of method that hydrophobicity SERS substrates are prepared using screen printing technique |
| CN105118790B (en) * | 2015-07-23 | 2017-12-29 | 淄博美林电子有限公司 | A kind of high temperature packaging framework preparation method of silicon carbide diode |
| CN105101658B (en) * | 2015-09-09 | 2017-10-20 | 中南大学 | The hot ultrasonic cryogenic sintering method and device of a kind of nano silver conductive ink |
-
2015
- 2015-12-09 CN CN201510915295.XA patent/CN105479026B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105479026A (en) | 2016-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105479026B (en) | A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength | |
| JP2590450B2 (en) | Method of forming bump electrode | |
| CN103930990B (en) | Semiconductor device and the manufacture method of semiconductor device | |
| CN109411372B (en) | Method for uniformly current-assisted sintering of nano-silver solder paste temperature field based on copper-clad ceramic substrate | |
| CN107511602B (en) | nano Ag-Cu soldering paste and preparation method and application thereof | |
| CN113206018B (en) | Low-temperature large-area uniform sintering method for nano-silver soldering paste | |
| JPH0426797B2 (en) | ||
| CN104540333A (en) | Assembly process method for 3D Plus encapsulating device | |
| CN104159872A (en) | Joined body and semiconductor module | |
| US10186494B2 (en) | Electronic component | |
| JP4654865B2 (en) | Electronic component mounting method | |
| CN103934534A (en) | Vacuum welding method for thick film substrate and power shell | |
| CN108289390B (en) | Carrier plate design and packaging method for solving tombstoning problem of small-sized resistor-capacitor element and carrier plate | |
| CN105489507B (en) | Fast Sintering connection method and device of a kind of igbt chip with direct copper-clad base plate | |
| CN110459667B (en) | LED flip-chip substrate | |
| CN102610537A (en) | Method for low-temperature solid bonding of semiconductor device | |
| CN113695695A (en) | Method for soldering tin paste for semiconductor chip | |
| JP2001274539A (en) | Electrode joining method for printed wiring board loaded with electronic device | |
| CN111540692A (en) | Chip back-gold method | |
| CN106356308B (en) | Method of die bonding to a board and device made using the method | |
| CN101321441A (en) | Method of reflow soldering a printed circuit board wherein an electroconductive coating material is used | |
| CN112820652B (en) | Method for removing Jin Tang tin from L-shaped welding terminal of QFN packaging device | |
| CN207021251U (en) | A kind of semiconductor package | |
| CN102554383A (en) | Method for realizing copper-copper bonding through current sintering technology and device thereof | |
| CN111774682A (en) | Welding method for special-shaped porous printed board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |