CN105470253B - 一种FinFET结构及其制造方法 - Google Patents
一种FinFET结构及其制造方法 Download PDFInfo
- Publication number
- CN105470253B CN105470253B CN201410459357.6A CN201410459357A CN105470253B CN 105470253 B CN105470253 B CN 105470253B CN 201410459357 A CN201410459357 A CN 201410459357A CN 105470253 B CN105470253 B CN 105470253B
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- fin
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- gate stack
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000000574 ganglionic effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410459357.6A CN105470253B (zh) | 2014-09-10 | 2014-09-10 | 一种FinFET结构及其制造方法 |
| PCT/CN2014/088595 WO2016037395A1 (fr) | 2014-09-10 | 2014-10-15 | Structure finfet et son procédé de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410459357.6A CN105470253B (zh) | 2014-09-10 | 2014-09-10 | 一种FinFET结构及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105470253A CN105470253A (zh) | 2016-04-06 |
| CN105470253B true CN105470253B (zh) | 2018-08-10 |
Family
ID=55458290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410459357.6A Active CN105470253B (zh) | 2014-09-10 | 2014-09-10 | 一种FinFET结构及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105470253B (fr) |
| WO (1) | WO2016037395A1 (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060130322A (ko) * | 2005-06-14 | 2006-12-19 | 주식회사 하이닉스반도체 | 수직 채널을 갖는 전계 효과 트랜지스터 및 그 제조방법 |
| CN101819975A (zh) * | 2010-04-28 | 2010-09-01 | 复旦大学 | 垂直沟道双栅隧穿晶体管及其制备方法 |
| CN102420232A (zh) * | 2010-09-28 | 2012-04-18 | 中国科学院微电子研究所 | 一种闪存器件及其形成方法 |
| CN103956338A (zh) * | 2014-04-29 | 2014-07-30 | 复旦大学 | 一种集成u形沟道器件和鳍形沟道器件的集成电路及其制备方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7811889B2 (en) * | 2007-08-08 | 2010-10-12 | Freescale Semiconductor, Inc. | FinFET memory cell having a floating gate and method therefor |
-
2014
- 2014-09-10 CN CN201410459357.6A patent/CN105470253B/zh active Active
- 2014-10-15 WO PCT/CN2014/088595 patent/WO2016037395A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060130322A (ko) * | 2005-06-14 | 2006-12-19 | 주식회사 하이닉스반도체 | 수직 채널을 갖는 전계 효과 트랜지스터 및 그 제조방법 |
| CN101819975A (zh) * | 2010-04-28 | 2010-09-01 | 复旦大学 | 垂直沟道双栅隧穿晶体管及其制备方法 |
| CN102420232A (zh) * | 2010-09-28 | 2012-04-18 | 中国科学院微电子研究所 | 一种闪存器件及其形成方法 |
| CN103956338A (zh) * | 2014-04-29 | 2014-07-30 | 复旦大学 | 一种集成u形沟道器件和鳍形沟道器件的集成电路及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016037395A1 (fr) | 2016-03-17 |
| CN105470253A (zh) | 2016-04-06 |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |