CN105463406A - Atomic layer deposition equipment - Google Patents
Atomic layer deposition equipment Download PDFInfo
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- CN105463406A CN105463406A CN201410449141.1A CN201410449141A CN105463406A CN 105463406 A CN105463406 A CN 105463406A CN 201410449141 A CN201410449141 A CN 201410449141A CN 105463406 A CN105463406 A CN 105463406A
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Abstract
The invention relates to atomic layer deposition equipment. The atomic layer deposition equipment comprises a conveying chamber (110), a pre-cleaning chamber (134), a heat treatment chamber (138), a loading-locking chamber (140), a plurality of reaction chambers (121, 122 and 123) and a front end module (150). The pre-cleaning chamber (134), the heat treatment chamber (138), the loading-locking chamber (140) and the reaction chambers (121, 122 and 123) are communicated with the conveying chamber. The front end module (150) is communicated with the loading-locking chamber. A mechanical arm (115) is arranged in the conveying chamber and used for conveying substrates between the conveying chamber and the pre-cleaning chamber, between the conveying chamber and the heat treatment chamber, between the conveying chamber and the loading-locking chamber and between the conveying chamber and the reaction chambers. Through arrangement, the substrates are automatically conveyed between the front end module and the loading-locking chamber. Through the combination of the set of the conveying chamber, the pre-cleaning chamber, the heat treatment chamber and the loading-locking chamber with the multiple reaction chambers, the equipment cost can be reduced while the productivity is improved.
Description
Technical field
The present invention relates generally to ald (AtomicLayerDeposition, ALD), more specifically, relates to atomic layer deposition apparatus.
Background technology
Ald is by vaporous precursors pulse alternately being passed into reactor and chemisorption reaction and form a kind of technology of deposited film on deposited base material.Precursor reaches deposited base material surface, and their are understood at its chemical absorption of surface and surface reaction occurs.The surface reaction of ald has from restricted (self-limiting), constantly repeats this from the film of limited reactions just required for formation.According to the difference of deposition precursor body and substrate material, ald have two kinds different from restriction scheme, namely chemisorption from restriction (CS) and in turn reaction from (RS) process of restriction.Chemical reaction generally carries out under accurate temperature control (50-600 DEG C), also may add the plasma body of radio frequency power generation again to improve speed of reaction.
Chemisorption is in restriction deposition process, and the first precursors is input to substrate material surface and remains on surface by chemisorption (saturated adsorption).When the second presoma passes into reactor, rise and will react with the first presoma being adsorbed in substrate material surface.Replacement(metathesis)reaction can occur between two presomas and produce corresponding by product, until the first presoma completely consumed on surface, reaction can automatically stop and forming the atomic shell needed.This reaction process can be represented by formula (1) below, and wherein ML2 represents the first presoma, and AN2 represents the second presoma, and MA represents generated atomic shell
ML2+AN2---MA+2LN(1)
Different from limit procedure from chemisorption, reaction is driven by active precursor species and active matrix material surface chemical reaction from restriction atomic layer deposition process in turn.The deposit film obtained like this is because the chemical reaction between presoma and substrate material is formed.For react in turn from limit procedure be first activator (AN) activated substrate material surface; Then the first presoma ML2 injected forms absorption intermediate A ML in the substrate material surface reaction of activation, and this can represent with reaction equation (2).Reaction (2) the reaction consumption of activator AN and automatically stops, and has from restricted.When after deposition reaction the second precursor A N2 injecting reactor, will generate deposition and atomic layer with above-mentioned absorption intermediate reaction, this can represent with reaction equation (3).
AN+ML2---AML+NL(2)
AML+AN2---MAN+NL(3)
For reacting from limit procedure in turn, on the one hand substrate material surface must first through surface active, and on the other hand, this deposition reaction is actual is the combination of half-reaction (2) and (3).
Summary of the invention
Existing atomic layer deposition apparatus is still further improved.
In one embodiment of the invention, disclose a kind of atomic layer deposition apparatus, this atomic layer deposition apparatus comprises: transfer chamber; The pre-cleaning chamber be communicated with described transfer chamber respectively, thermal chamber, loading lock and multiple reaction chamber; The front-end module be communicated with described loading lock; Wherein, in described multiple reaction chamber via the reaction of process gas by the surface of ald in base material; Be equipped with mechanical arm for transmitting base material at described transfer chamber with between pre-cleaning chamber, thermal chamber, loading lock and multiple reaction chamber in described transfer chamber; Described front-end module is configured as automatically and between described loading lock transmitting base material.
In an embodiment of above-mentioned atomic layer deposition apparatus, described transfer chamber and multiple reaction chamber can be closed independently of one another.
In an embodiment of above-mentioned atomic layer deposition apparatus, described mechanical arm is multilayer dual-arm robot.
In an embodiment of above-mentioned atomic layer deposition apparatus, described multiple reaction chamber can deposit 3-6 plate substrate respectively simultaneously.
In an embodiment of above-mentioned atomic layer deposition apparatus, in described multiple reaction chamber, be equipped with parallel movement apparatus or rotating and moving device of configuration-changeable for moving substrate respectively.
In an embodiment of above-mentioned atomic layer deposition apparatus, the interface that is communicated with between described transfer chamber with described multiple reaction chamber allows once to transmit a slice or two plate substrates.
In an embodiment of above-mentioned atomic layer deposition apparatus, described transfer chamber allows once to transmit two plate substrates with the interface that is communicated with loaded between lock.
In an embodiment of above-mentioned atomic layer deposition apparatus, described multiple reaction chamber is configured the work period for staggering each other.
In an embodiment of above-mentioned atomic layer deposition apparatus, described base material is wafer.
Due to slow, the consuming time length of ald speed of response, cause the bottleneck of production capacity mainly at reaction chamber.The processing efficiency of transfer chamber, pre-cleaning chamber, thermal chamber, loading lock etc. all far exceedes reaction chamber.By the combination of one group of transfer chamber, pre-cleaning chamber, thermal chamber, loading lock and multiple reaction chamber, equipment cost can be reduced while raising production capacity.According to some embodiment of the present invention, by the work period of each reaction chamber that staggers, the loading or unloading of another reaction chamber can be performed within the reaction time of a reaction chamber, thus save the waiting time, further increase production efficiency.
Accompanying drawing explanation
By reference to the accompanying drawings, will be easier to understand about the detailed description of the preferred embodiments of the present invention below.The present invention is explained by way of example, is not limited to accompanying drawing, and Reference numeral similar in accompanying drawing indicates similar element.
Fig. 1 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 100 of an embodiment;
Fig. 2 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 200 of an embodiment;
Fig. 3 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 300 of an embodiment;
Fig. 4 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 400 of an embodiment;
Fig. 5 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 500 of an embodiment;
Fig. 6 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 600 of an embodiment.
Embodiment
The detailed description of accompanying drawing is intended to the explanation as currently preferred embodiment of the present invention, and is not intended to represent that the present invention can be achieved only has form.It should be understood that identical or equivalent function can complete by being intended to the different embodiments be contained within the spirit and scope of the present invention.
Fig. 1 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 100 of an embodiment.As shown in the figure, this equipment 100 is arranged to surrounding diffusion substantially centered by transfer chamber 110.Mechanical arm 115 is equipped with, for transmitting the base material of such as wafer between transfer chamber 110 and each chamber be communicated with it in transfer chamber 110.This mechanical arm 115, such as but not limited to being multilayer dual-arm robot, transmits more substrates to be supported between multiple chamber simultaneously.
Three reaction chambers 121,122 are communicated with transfer chamber respectively with 123, and can close independently of one another.In the reaction chamber, via the reaction of process gas by required ald in base material, such as wafer, surface.This deposition process is carried out usually under vacuum conditions.Three reaction chambers 121,122 and 123 can deposit 6 plate substrates respectively simultaneously.Each reaction chamber allows loading or unloading two plate substrate with the interface that is communicated with of transfer chamber 110.Base material is inwardly come by parallel movement apparatus or moves towards connection interface direction in reaction chamber.Transfer chamber also works usually under vacuum conditions.
Transfer chamber 110 is also connected with pre-cleaning chamber 134, thermal chamber 138.Pre-cleaning chamber 134 is for carrying out and clean the base material preparing to carry out ald.Thermal chamber 138 for heat-treating the base material preparing to carry out ald or the base material that deposited atomic shell, such as, preheats or radiating and cooling.
Transfer chamber 110 is also communicated with loading lock 140, loads lock 140 and is communicated with front-end module 150, and thus base material can transmit between transfer chamber 110 and front-end module 150 via loading lock 140.Load in lock 140 and be equipped with transport unit and air extractor.Transport unit can be, such as but not limited to, rotary-type mechanical manipulator or sliding rail.When loading lock 140 and needing to be communicated with transfer chamber 110, change the vacuum environment approximate with transfer chamber 110 by air extractor into by loading in lock 140.And the base material loaded between lock 140 and front-end module 150 carries out under being delivered in atmospheric environment.Load lock 140 to allow once to transmit two plate substrates with the interface that is communicated with between transfer chamber 110, front-end module 150.
Also show in Fig. 1 in front-end module 150 be equipped be used for moving substrate mechanical manipulator and be used for depositing the storehouse of base material.Mechanical manipulator in front-end module 150 automatically transmits base material between front-end module 150 and loading lock 140.Front-end module 150 can also be connected to the production line of base material.
Due to slow, the consuming time length of ald speed of response, cause the bottleneck of production capacity mainly at reaction chamber.The processing efficiency of transfer chamber, pre-cleaning chamber, thermal chamber, loading lock etc. all far exceedes reaction chamber.By one group of transfer chamber 110, pre-cleaning chamber 134, thermal chamber 138, load lock 140 and the combination of multiple reaction chamber, equipment cost can be reduced while raising production capacity.By the work period of each reaction chamber 121,122,123 that staggers, the loading or unloading of another reaction chamber can be performed within the reaction time of a reaction chamber, thus save the waiting time, further increase production efficiency.
Fig. 2 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 200 of an embodiment.As shown in the figure, this equipment 200 is arranged to surrounding diffusion substantially centered by transfer chamber 210.Mechanical arm 215 is equipped with, for transmitting the base material of such as wafer between transfer chamber 210 and each chamber be communicated with it in transfer chamber 210.This mechanical arm 215, such as but not limited to being multilayer dual-arm robot, transmits more substrates to be supported between multiple chamber simultaneously.
Three reaction chambers 221,222 are communicated with transfer chamber respectively with 223, and can close independently of one another.In the reaction chamber, via the reaction of process gas by required ald in base material, such as wafer, surface.This deposition process is carried out usually under vacuum conditions.Three reaction chambers 221,222 and 223 can deposit 4 plate substrates respectively simultaneously.Each reaction chamber allows loading or unloading two plate substrate with the interface that is communicated with of transfer chamber 210.Base material is inwardly come by rotating and moving device of configuration-changeable or moves towards connection interface direction in reaction chamber.Transfer chamber also works usually under vacuum conditions.
Transfer chamber 210 is also connected with pre-cleaning chamber 234, thermal chamber 238.Pre-cleaning chamber 234 is for carrying out and clean the base material preparing to carry out ald.Thermal chamber 238 for heat-treating the base material preparing to carry out ald or the base material that deposited atomic shell, such as, preheats or radiating and cooling.
Transfer chamber 210 is also communicated with loading lock 240, loads lock 240 and is communicated with front-end module 250, and thus base material can transmit between transfer chamber 210 and front-end module 250 via loading lock 240.Load in lock 240 and be equipped with transport unit and air extractor.Transport unit can be, such as but not limited to, rotary-type mechanical manipulator or sliding rail.When loading lock 240 and needing to be communicated with transfer chamber 210, change the vacuum environment approximate with transfer chamber 210 by air extractor into by loading in lock 240.And the base material loaded between lock 240 and front-end module 250 carries out under being delivered in atmospheric environment.Load lock 240 to allow once to transmit two plate substrates with the interface that is communicated with between transfer chamber 210, front-end module 250.
Also show in Fig. 2 in front-end module 250 be equipped be used for moving substrate mechanical manipulator and be used for depositing the storehouse of base material.Mechanical manipulator in front-end module 250 automatically transmits base material between front-end module 250 and loading lock 240.Front-end module 250 can also be connected to the production line of base material.
Implement in aspect at this, by one group of transfer chamber 210, pre-cleaning chamber 234, thermal chamber 238, load lock 240 and the combination of multiple reaction chamber, equipment cost can be reduced while raising production capacity.By the work period of each reaction chamber 221,222,223 that staggers, the loading or unloading of another reaction chamber can be performed within the reaction time of a reaction chamber, thus save the waiting time, further increase production efficiency.
Fig. 3 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 300 of an embodiment.As shown in the figure, this equipment 300 is arranged to surrounding diffusion substantially centered by transfer chamber 310.Mechanical arm 315 is equipped with, for transmitting the base material of such as wafer between transfer chamber 310 and each chamber be communicated with it in transfer chamber 310.This mechanical arm 315, such as but not limited to being multilayer dual-arm robot, transmits more substrates to be supported between multiple chamber simultaneously.
Three reaction chambers 321,322 are communicated with transfer chamber respectively with 323, and can close independently of one another.In the reaction chamber, via the reaction of process gas by required ald in base material, such as wafer, surface.This deposition process is carried out usually under vacuum conditions.Three reaction chambers 321,322 and 323 can deposit 6 plate substrates respectively simultaneously.Each reaction chamber allows loading or unloading two plate substrate with the interface that is communicated with of transfer chamber 310.Base material is inwardly come by rotating and moving device of configuration-changeable or moves towards connection interface direction in reaction chamber.Transfer chamber also works usually under vacuum conditions.
Transfer chamber 310 is also connected with pre-cleaning chamber 334, thermal chamber 338.Pre-cleaning chamber 334 is for carrying out and clean the base material preparing to carry out ald.Thermal chamber 338 for heat-treating the base material preparing to carry out ald or the base material that deposited atomic shell, such as, preheats or radiating and cooling.
Transfer chamber 310 is also communicated with loading lock 340, loads lock 340 and is communicated with front-end module 350, and thus base material can transmit between transfer chamber 310 and front-end module 350 via loading lock 340.Load in lock 340 and be equipped with transport unit and air extractor.Transport unit can be, such as but not limited to, rotary-type mechanical manipulator or sliding rail.When loading lock 340 and needing to be communicated with transfer chamber 310, change the vacuum environment approximate with transfer chamber 310 by air extractor into by loading in lock 340.And the base material loaded between lock 340 and front-end module 350 carries out under being delivered in atmospheric environment.Load lock 340 to allow once to transmit two plate substrates with the interface that is communicated with between transfer chamber 310, front-end module 350.
Also show in Fig. 3 in front-end module 350 be equipped be used for moving substrate mechanical manipulator and be used for depositing the storehouse of base material.Front-end module 350 can also be connected to the production line of base material.
Implement in aspect at this, by one group of transfer chamber 310, pre-cleaning chamber 334, thermal chamber 338, load lock 340 and the combination of multiple reaction chamber, equipment cost can be reduced while raising production capacity.By the work period of each reaction chamber 321,322,323 that staggers, the loading or unloading of another reaction chamber can be performed within the reaction time of a reaction chamber, thus save the waiting time, further increase production efficiency.
Fig. 4 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 400 of an embodiment.As shown in the figure, this equipment 400 is arranged to surrounding diffusion substantially centered by transfer chamber 410.Mechanical arm 415 is equipped with, for transmitting the base material of such as wafer between transfer chamber 410 and each chamber be communicated with it in transfer chamber 410.This mechanical arm 415, such as but not limited to being multilayer dual-arm robot, transmits more substrates to be supported between multiple chamber simultaneously.
Five reaction chambers 421,422,423,424 are communicated with transfer chamber 410 respectively with 425, and can close independently of one another.In the reaction chamber, via the reaction of process gas by the surface of required ald in base material.This deposition process is carried out usually under vacuum conditions.Reaction chamber 421,423 and 425 can deposit 4 plate substrates respectively simultaneously, allows loading or unloading two plate substrate separately with the interface that is communicated with of transfer chamber 410.Reaction chamber 422 and 424 can deposit 3 plate substrates respectively simultaneously, allows loading or unloading one plate substrate separately with the interface that is communicated with of transfer chamber 410.Base material is inwardly come by rotating and moving device of configuration-changeable or moves towards connection interface direction in each reaction chamber.Transfer chamber also works usually under vacuum conditions.
Transfer chamber 410 is also connected with pre-cleaning chamber 434, thermal chamber 438.Pre-cleaning chamber 434 is for carrying out and clean the base material preparing to carry out ald.Thermal chamber 438 for heat-treating the base material preparing to carry out ald or the base material that deposited atomic shell, such as, preheats or radiating and cooling.
Transfer chamber 410 is also communicated with loading lock 440, loads lock 440 and is communicated with front-end module 450, and thus base material can transmit between transfer chamber 410 and front-end module 450 via loading lock 440.Load in lock 440 and be equipped with transport unit and air extractor.Transport unit can be, such as but not limited to, rotary-type mechanical manipulator or sliding rail.When loading lock 440 and needing to be communicated with transfer chamber 410, change the vacuum environment approximate with transfer chamber 410 by air extractor into by loading in lock 440.And the base material loaded between lock 440 and front-end module 450 carries out under being delivered in atmospheric environment.Load lock 440 to allow once to transmit two plate substrates with the interface that is communicated with between transfer chamber 410, front-end module 450.
Also show in Fig. 4 in front-end module 450 be equipped be used for moving substrate mechanical manipulator and be used for depositing the storehouse of base material.Front-end module 450 can also be connected to the production line of base material.
Implement in aspect at this, by one group of transfer chamber 410, pre-cleaning chamber 434, thermal chamber 438, load lock 440 and the combination of multiple reaction chamber, equipment cost can be reduced while raising production capacity.By the work period of each reaction chamber 421,422,423,424,425 that staggers, the loading or unloading of another reaction chamber can be performed within the reaction time of a reaction chamber, thus save the waiting time, further increase production efficiency.
Fig. 5 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 500 of an embodiment.As shown in the figure, this equipment 500 is arranged to surrounding diffusion substantially centered by transfer chamber 510.Mechanical arm 515 is equipped with, for transmitting the base material of such as wafer between transfer chamber 510 and each chamber be communicated with it in transfer chamber 510.This mechanical arm 515, such as but not limited to being multilayer dual-arm robot, transmits more substrates to be supported between multiple chamber simultaneously.
Five reaction chambers 521,522,523,524 are communicated with transfer chamber 510 respectively with 525, and can close independently of one another.In the reaction chamber, via the reaction of process gas by the surface of required ald in base material.This deposition process is carried out usually under vacuum conditions.Reaction chamber 521,523 and 525 can deposit 4 plate substrates respectively simultaneously, allow loading or unloading two plate substrate with the interface that is communicated with of transfer chamber 510 separately, base material is inwardly come by parallel movement apparatus or moves towards connection interface direction in these three reaction chambers.Reaction chamber 522 and 524 can deposit 3 plate substrates respectively simultaneously, allows loading or unloading one plate substrate separately with the interface that is communicated with of transfer chamber 510, and base material is inwardly come by rotating and moving device of configuration-changeable or moves towards connection interface direction in these two reaction chambers.Transfer chamber also works usually under vacuum conditions.
Transfer chamber 510 is also connected with pre-cleaning chamber 534, thermal chamber 538.Pre-cleaning chamber 534 is for carrying out and clean the base material preparing to carry out ald.Thermal chamber 538 for heat-treating the base material preparing to carry out ald or the base material that deposited atomic shell, such as, preheats or radiating and cooling.
Transfer chamber 510 is also communicated with loading lock 540, loads lock 540 and is communicated with front-end module 550, and thus base material can transmit between transfer chamber 510 and front-end module 550 via loading lock 540.Load in lock 540 and be equipped with transport unit and air extractor.Transport unit can be, such as but not limited to, rotary-type mechanical manipulator or sliding rail.When loading lock 540 and needing to be communicated with transfer chamber 510, change the vacuum environment approximate with transfer chamber 510 by air extractor into by loading in lock 540.And the base material loaded between lock 540 and front-end module 550 carries out under being delivered in atmospheric environment.Load lock 540 to allow once to transmit two plate substrates with the interface that is communicated with between transfer chamber 510, front-end module 550.
Also show in Fig. 5 in front-end module 550 be equipped be used for moving substrate mechanical manipulator and be used for depositing the storehouse of base material.Front-end module 550 can also be connected to the production line of base material.
Implement in aspect at this, by one group of transfer chamber 510, pre-cleaning chamber 534, thermal chamber 538, load lock 540 and the combination of multiple reaction chamber, equipment cost can be reduced while raising production capacity.By the work period of each reaction chamber 521,522,523,524,525 that staggers, the loading or unloading of another reaction chamber can be performed within the reaction time of a reaction chamber, thus save the waiting time, further increase production efficiency.
Fig. 6 is the planar arrangement schematic diagram of the atomic layer deposition apparatus 600 of an embodiment.As shown in the figure, this equipment 600 is arranged to surrounding diffusion substantially centered by transfer chamber 610.Mechanical arm 615 is equipped with, for transmitting the base material of such as wafer between transfer chamber 610 and each chamber be communicated with it in transfer chamber 610.This mechanical arm 615, such as but not limited to being multilayer dual-arm robot, transmits more substrates to be supported between multiple chamber simultaneously.
Three reaction chambers 621,622 are communicated with transfer chamber respectively with 623, and can close independently of one another.In the reaction chamber, via the reaction of process gas by required ald in base material, such as wafer, surface.This deposition process is carried out usually under vacuum conditions.Three reaction chambers 621,622 and 623 can deposit 4 plate substrates respectively simultaneously.Each reaction chamber allows loading or unloading two plate substrate with the interface that is communicated with of transfer chamber 610.Base material is inwardly come by parallel movement apparatus or moves towards connection interface direction in reaction chamber.Transfer chamber also works usually under vacuum conditions.
Transfer chamber 610 is also connected with pre-cleaning chamber 634, thermal chamber 638.Pre-cleaning chamber 634 is for carrying out and clean the base material preparing to carry out ald.Thermal chamber 638 for heat-treating the base material preparing to carry out ald or the base material that deposited atomic shell, such as, preheats or radiating and cooling.
Transfer chamber 610 is also communicated with loading lock 640, loads lock 640 and is communicated with front-end module 650, and thus base material can transmit between transfer chamber 610 and front-end module 650 via loading lock 640.Load in lock 640 and be equipped with transport unit and air extractor.Transport unit can be, such as but not limited to, rotary-type mechanical manipulator or sliding rail.When loading lock 640 and needing to be communicated with transfer chamber 610, change the vacuum environment approximate with transfer chamber 610 by air extractor into by loading in lock 640.And the base material loaded between lock 640 and front-end module 650 carries out under being delivered in atmospheric environment.Load lock 640 to allow once to transmit two plate substrates with the interface that is communicated with between transfer chamber 610, front-end module 650.
Also show in Fig. 6 in front-end module 650 be equipped be used for moving substrate mechanical manipulator and be used for depositing the storehouse of base material.Front-end module 650 can also be connected to the production line of base material.
Implement in aspect at this, by one group of transfer chamber 610, pre-cleaning chamber 634, thermal chamber 638, load lock 640 and the combination of multiple reaction chamber, equipment cost can be reduced while raising production capacity.By the work period of each reaction chamber 621,622,623 that staggers, the loading or unloading of another reaction chamber can be performed within the reaction time of a reaction chamber, thus save the waiting time, further increase production efficiency.
Although illustrate and describe different embodiments of the invention, the present invention is not limited to these embodiments.The technical characteristic only occurred in some claim or embodiment does not also mean that and can not combine with other features in other claims or embodiment to realize useful new technical scheme.When not deviating from the spirit and scope of the present invention described by claims, many amendments, change, distortion, substitute and equivalent be obvious to those skilled in the art.
Claims (9)
1. an atomic layer deposition apparatus, is characterized in that, this atomic layer deposition apparatus comprises:
Transfer chamber;
The pre-cleaning chamber be communicated with described transfer chamber respectively, thermal chamber, loading lock and multiple reaction chamber;
The front-end module be communicated with described loading lock;
Wherein, in described multiple reaction chamber via the reaction of process gas by the surface of ald in base material;
Be equipped with mechanical arm for transmitting base material at described transfer chamber with between pre-cleaning chamber, thermal chamber, loading lock and multiple reaction chamber in described transfer chamber;
Described front-end module is configured as automatically and between described loading lock transmitting base material.
2. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that, described transfer chamber and multiple reaction chamber can be closed independently of one another.
3. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that, described mechanical arm is multilayer dual-arm robot.
4. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that, described multiple reaction chamber can deposit 3-6 plate substrate respectively simultaneously.
5. atomic layer deposition apparatus as claimed in claim 1, is characterized in that, be equipped with parallel movement apparatus or rotating and moving device of configuration-changeable for moving substrate separately in described multiple reaction chamber.
6. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that, the interface that is communicated with between described transfer chamber with described multiple reaction chamber allows once to transmit a slice or two plate substrates.
7. atomic layer deposition apparatus as claimed in claim 1, is characterized in that, described transfer chamber allows once to transmit two plate substrates with the interface that is communicated with loaded between lock.
8. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that, described multiple reaction chamber is configured the work period for staggering each other.
9. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that, described base material is wafer.
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| CN201410449141.1A CN105463406A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition equipment |
| CN202011079287.3A CN112111729A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition apparatus |
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| CN201410449141.1A CN105463406A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition equipment |
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| WO2022140164A1 (en) * | 2020-12-23 | 2022-06-30 | Applied Materials, Inc. | Semiconductor processing tool platform configuration with reduced footprint |
| TWI817297B (en) * | 2020-12-23 | 2023-10-01 | 美商應用材料股份有限公司 | Semiconductor processing tool platform configuration with reduced footprint |
| JP7470192B2 (en) | 2020-12-23 | 2024-04-17 | アプライド マテリアルズ インコーポレイテッド | Platform configuration for reduced footprint semiconductor processing tools |
| US11996307B2 (en) | 2020-12-23 | 2024-05-28 | Applied Materials, Inc. | Semiconductor processing tool platform configuration with reduced footprint |
| CN114496901A (en) * | 2022-04-15 | 2022-05-13 | 拓荆科技(北京)有限公司 | Manipulator applied to coating equipment |
| CN115852336A (en) * | 2022-11-24 | 2023-03-28 | 广东汇成真空科技股份有限公司 | Mass production type ALD device workpiece conveying mechanical arm and ALD device provided with baking box |
| CN115852336B (en) * | 2022-11-24 | 2023-10-31 | 广东汇成真空科技股份有限公司 | Workpiece conveying manipulator of mass-production ALD device and ALD device provided with baking oven |
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| CN112111729A (en) | 2020-12-22 |
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