CN112111729A - Atomic layer deposition apparatus - Google Patents
Atomic layer deposition apparatus Download PDFInfo
- Publication number
- CN112111729A CN112111729A CN202011079287.3A CN202011079287A CN112111729A CN 112111729 A CN112111729 A CN 112111729A CN 202011079287 A CN202011079287 A CN 202011079287A CN 112111729 A CN112111729 A CN 112111729A
- Authority
- CN
- China
- Prior art keywords
- chamber
- atomic layer
- load lock
- reaction
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to an atomic layer deposition apparatus. An atomic layer deposition apparatus comprising: a transfer chamber (110); a pre-cleaning chamber (134), a thermal treatment chamber (138), a load lock chamber (140), and a plurality of reaction chambers (121, 122, 123) respectively communicating with the transfer chamber; a front end module (150) in communication with the load lock chamber; a robot (115) is provided in the transfer chamber for transferring substrates between the transfer chamber and the pre-clean chamber, the thermal process chamber, the load lock chamber, and the plurality of reaction chambers; the front end module is configured to automatically transfer substrates with the load lock chamber. The combination of a set of transfer chamber, pre-clean chamber, thermal process chamber, load lock chamber and multiple reaction chambers can improve throughput and reduce equipment cost.
Description
Divisional application information
The application is a divisional application of an invention patent application with the application date of 2014, 9, 4, and the application number of 201410449141.1, and the name of the invention is 'atomic layer deposition equipment'.
Technical Field
The present invention relates generally to Atomic Layer Deposition (ALD), and more particularly to Atomic Layer Deposition equipment.
Background
Atomic layer deposition is a technique for forming deposited films by alternately pulsing vapor phase precursors into a reactor and chemisorbing and reacting on a deposition substrate. When precursors reach the surface of the deposition substrate, they chemisorb and undergo surface reactions on the surface. Atomic layer deposition has a self-limiting surface reaction (self-limiting) that is repeated to form the desired thin film. Atomic layer deposition has two different self-limiting mechanisms, namely, chemisorption self-limiting (CS) and sequential reaction self-limiting (RS) processes, depending on the deposition precursor and substrate materials. The chemical reaction is generally carried out under the condition of accurate temperature control (50-600 ℃), and plasma generated by radio frequency power can be added to improve the reaction rate.
During chemisorption self-limiting deposition, a first reactive precursor is input to the surface of the substrate material and is held at the surface by chemisorption (saturation adsorption). When the second precursor is introduced into the reactor, it reacts with the first precursor adsorbed on the surface of the substrate material. A displacement reaction between the two precursors and the production of corresponding by-products will take place, and until the first precursor on the surface is completely consumed, the reaction will automatically stop and form the desired atomic layer. The reaction process can be expressed by the following formula (1), wherein ML2 represents a first precursor, AN2 represents a second precursor, and MA represents the atomic layer formed
ML2+AN2---MA+2LN (1)
Unlike chemisorption self-limiting processes, sequential reaction self-limiting atomic layer deposition processes are driven by the chemical reaction of active precursor species with the surface of the active substrate material. The deposited film thus obtained is formed as a result of a chemical reaction between the precursor and the substrate material. For the sequential reaction self-limiting process, firstly, AN activating Agent (AN) activates the surface of a substrate material; the injected first precursor ML2 then reacts at the surface of the activated substrate material to form the adsorption intermediate AML, which can be represented by equation (2). The reaction (2) is self-limiting in that the reaction of the activator AN is automatically terminated as it is consumed. When a deposition reaction second precursor, AN2, is injected into the reactor, it reacts with the adsorbed intermediates and forms a deposited atomic layer, which can be expressed by equation (3).
AN+ML2---AML+NL (2)
AML+AN2---MAN+NL (3)
For a sequential reaction self-limiting process, on the one hand, the substrate material surface must first undergo surface activation, and on the other hand, the deposition reaction is actually a combination of half-reactions (2) and (3).
Disclosure of Invention
The existing atomic layer deposition equipment still needs to be further improved.
In one embodiment of the present invention, an atomic layer deposition apparatus is disclosed, comprising: a transfer chamber; a pre-cleaning chamber, a heat treatment chamber, a loading locking chamber and a plurality of reaction chambers which are respectively communicated with the conveying chamber; a front end module in communication with the load lock chamber; wherein an atomic layer is deposited on a surface of a substrate via reaction of process gases in the plurality of reaction chambers; the transfer chamber is equipped with a robot therein for transferring substrates between the transfer chamber and the pre-clean chamber, the thermal process chamber, the load lock chamber, and the plurality of reaction chambers; the front end module is configured to automatically transfer substrates with the load lock chamber.
In one embodiment of the above atomic layer deposition apparatus, the transfer chamber and the plurality of reaction chambers are each independently closable.
In an embodiment of the atomic layer deposition apparatus described above, the robot is a multi-layer dual arm robot.
In one embodiment of the atomic layer deposition apparatus, the plurality of reaction chambers are capable of simultaneously depositing 3-6 substrates.
In one embodiment of the above atomic layer deposition apparatus, the plurality of reaction chambers are respectively provided with a parallel moving device or a rotary moving device for moving the substrate.
In one embodiment of the above atomic layer deposition apparatus, the communication interface between the transfer chamber and the plurality of reaction chambers allows for transfer of one or two substrates at a time.
In one embodiment of the atomic layer deposition apparatus described above, the communication interface between the transfer chamber and the load lock chamber allows for two substrates to be transferred at a time.
In one embodiment of the above atomic layer deposition apparatus, the plurality of reaction chambers are configured to stagger duty cycles of each other.
In an embodiment of the atomic layer deposition apparatus described above, the substrate is a wafer.
Because the ald reaction is slow and time-consuming, the bottleneck of productivity is mainly in the reaction chamber. The processing efficiency of the transfer chamber, pre-clean chamber, thermal process chamber, load lock chamber, etc. is far superior to that of the reaction chamber. The combination of a set of transfer chamber, pre-clean chamber, thermal process chamber, load lock chamber and multiple reaction chambers can improve throughput and reduce equipment cost. According to some embodiments of the present invention, by staggering the duty cycles of the reaction chambers, the loading or unloading of one reaction chamber can be performed during the reaction cycle of another reaction chamber, thereby saving the waiting time and further improving the production efficiency.
Drawings
The following detailed description of preferred embodiments of the present invention will be better understood when read in conjunction with the appended drawings. The present invention is illustrated by way of example and is not limited by the accompanying figures, in which like references indicate similar elements.
FIG. 1 is a schematic plan view of an exemplary atomic layer deposition apparatus 100;
FIG. 2 is a schematic plan view of an exemplary atomic layer deposition apparatus 200;
FIG. 3 is a schematic plan view of an exemplary atomic layer deposition apparatus 300;
FIG. 4 is a schematic plan view of an exemplary atomic layer deposition apparatus 400;
FIG. 5 is a schematic plan view of an exemplary atomic layer deposition apparatus 500;
FIG. 6 is a schematic plan view of an atomic layer deposition apparatus 600 according to an embodiment.
Detailed Description
The detailed description of the drawings is intended as a description of the presently preferred embodiments of the invention, and is not intended to represent the only forms in which the present invention may be practiced. It is to be understood that the same or equivalent functions may be accomplished by different embodiments that are intended to be encompassed within the spirit and scope of the invention.
Fig. 1 is a schematic plan view of an atomic layer deposition apparatus 100 according to an embodiment. As shown, the apparatus 100 is generally arranged to be spread around the transfer chamber 110. Transfer chamber 110 is equipped with a robot 115 for transferring substrates, such as wafers, between transfer chamber 110 and the various chambers in communication therewith. The robot 115 may be, for example, but not limited to, a multi-level dual arm robot, to support the simultaneous transfer of multiple substrates between multiple chambers.
The three reaction chambers 121, 122 and 123 are respectively communicated with the transfer chamber and are each independently closable. In the reaction chamber, a desired atomic layer is deposited on the surface of a substrate, such as a wafer, through reaction of the process gases. The deposition process is typically performed in a vacuum environment. The three reaction chambers 121, 122 and 123 are each capable of simultaneously depositing 6 substrates. The communication interface between each reaction chamber and the transfer chamber 110 allows two substrates to be loaded or unloaded at a time. The substrate is moved inwards or towards the communication interface in the reaction chamber by a parallel moving device. The transfer chamber also typically operates in a vacuum environment.
The transfer chamber 110 is also in communication with the pre-clean chamber 134 and the thermal process chamber 138. The precleaning chamber 134 is used to perform and clean processes on substrates that are ready for atomic layer deposition. The thermal processing chamber 138 is used to perform thermal processing, such as preheating or thermal cooling, on a substrate to be subjected to atomic layer deposition or a substrate on which an atomic layer has been deposited.
The transfer chamber 110 is also in communication with the load lock chamber 140, the load lock chamber 140 is in communication with the front end module 150, and substrates can thus be transferred between the transfer chamber 110 and the front end module 150 via the load lock chamber 140. The load lock chamber 140 is equipped with a transfer device and a suction device. The transfer device may be, for example, but not limited to, a rotary robot or a sliding track. When the load lock chamber 140 needs to communicate with the transfer chamber 110, the load lock chamber 140 is transferred to a vacuum environment similar to the transfer chamber 110 by a pumping device. And substrate transfer between the load lock chamber 140 and the front end module 150 is performed in an atmospheric environment. The communicative interface between the load lock chamber 140 and the transfer chamber 110, front end module 150 allows for two substrates to be transferred at a time.
Also shown in fig. 1 are a robot in the front end module 150 for moving the substrates and a stack for storing the substrates. The robot in the front end module 150 automatically transfers substrates between the front end module 150 and the load lock chamber 140. The front end module 150 may also be connected to a substrate manufacturing line.
Because the ald reaction is slow and time-consuming, the bottleneck of productivity is mainly in the reaction chamber. The processing efficiency of the transfer chamber, pre-clean chamber, thermal process chamber, load lock chamber, etc. is far superior to that of the reaction chamber. By combining a set of transfer chamber 110, pre-clean chamber 134, thermal process chamber 138, load lock chamber 140, and multiple reaction chambers, the throughput can be increased while reducing equipment costs. By staggering the duty cycles of the respective reaction chambers 121, 122, 123, the loading or unloading of one reaction chamber can be performed within the reaction cycle of another reaction chamber, thereby saving the waiting time and further improving the production efficiency.
FIG. 2 is a schematic plan view of an exemplary atomic layer deposition apparatus 200. As shown, the apparatus 200 is generally arranged to be spread around the transfer chamber 210. Transfer chamber 210 is equipped with a robot 215 for transferring substrates, such as wafers, between transfer chamber 210 and the various chambers in communication therewith. The robot 215 is, for example and without limitation, a multi-level dual arm robot to support the simultaneous transfer of multiple substrates between multiple chambers.
The three reaction chambers 221, 222, and 223 are respectively communicated with the transfer chamber, and each may be independently closable. In the reaction chamber, a desired atomic layer is deposited on the surface of a substrate, such as a wafer, through reaction of the process gases. The deposition process is typically performed in a vacuum environment. The three reaction chambers 221, 222, and 223 are capable of simultaneously depositing 4 substrates, respectively. The communication interface between each reaction chamber and the transfer chamber 210 allows two substrates to be loaded or unloaded at a time. The substrate is moved inwards or towards the communication interface in the reaction chamber by a rotary moving device. The transfer chamber also typically operates in a vacuum environment.
The transfer chamber 210 is also in communication with the pre-clean chamber 234 and the thermal process chamber 238. The precleaning chamber 234 is used to perform and clean processes on substrates that are ready for atomic layer deposition. The thermal processing chamber 238 is used for performing thermal processing, such as preheating or cooling, on a substrate to be subjected to atomic layer deposition or a substrate on which an atomic layer has been deposited.
The transfer chamber 210 is also in communication with the load lock chamber 240, the load lock chamber 240 is in communication with the front end module 250, and substrates can thus be transferred between the transfer chamber 210 and the front end module 250 via the load lock chamber 240. The load lock chamber 240 is equipped with a transfer device and a suction device. The transfer device may be, for example, but not limited to, a rotary robot or a sliding track. When the load lock chamber 240 needs to communicate with the transfer chamber 210, the load lock chamber 240 is transferred to a vacuum environment similar to the transfer chamber 210 by a pumping device. While the substrate transfer between the load lock chamber 240 and the front end module 250 is performed in an atmospheric environment. The communicative interface between the load lock chamber 240 and the transfer chamber 210 and front end module 250 allows for two substrates to be transferred at a time.
Also shown in fig. 2 is a robot in the front end module 250 configured to move the substrates and a stack for storing the substrates. The robot in the front end module 250 automatically transfers substrates between the front end module 250 and the load lock chamber 240. The front end module 250 may also be connected to a substrate manufacturing line.
In this embodiment, the combination of a set of transfer chamber 210, pre-clean chamber 234, thermal process chamber 238, load lock chamber 240 and multiple chambers can improve throughput while reducing equipment cost. By staggering the duty cycles of the reaction chambers 221, 222, 223, the loading or unloading of one reaction chamber can be performed during the reaction cycle of another reaction chamber, thereby saving the waiting time and further improving the production efficiency.
FIG. 3 is a schematic plan view of an exemplary atomic layer deposition apparatus 300. As shown, the apparatus 300 is generally arranged to be spread around the transfer chamber 310. The transfer chamber 310 is equipped with a robot 315 for transferring substrates, such as wafers, between the transfer chamber 310 and the various chambers in communication therewith. The robot 315 may be, for example and without limitation, a multi-level dual arm robot to support the simultaneous transfer of multiple substrates between multiple chambers.
The three reaction chambers 321, 322 and 323 are respectively communicated with the transfer chamber and each independently closable. In the reaction chamber, a desired atomic layer is deposited on the surface of a substrate, such as a wafer, through reaction of the process gases. The deposition process is typically performed in a vacuum environment. The three reaction chambers 321, 322, and 323 are capable of simultaneously depositing 6 substrates, respectively. The communicative interface between each reaction chamber and the transfer chamber 310 allows for the loading or unloading of two substrates at a time. The substrate is moved inwards or towards the communication interface in the reaction chamber by a rotary moving device. The transfer chamber also typically operates in a vacuum environment.
The transfer chamber 310 is also in communication with the load lock chamber 340, the load lock chamber 340 is in communication with the front end module 350, and substrates can thus be transferred between the transfer chamber 310 and the front end module 350 via the load lock chamber 340. The load lock chamber 340 is equipped with a transfer device and a suction device. The transfer device may be, for example, but not limited to, a rotary robot or a sliding track. When the load lock chamber 340 needs to communicate with the transfer chamber 310, the load lock chamber 340 is transferred to a vacuum environment similar to the transfer chamber 310 by a pumping device. While substrate transfer between the load lock chamber 340 and the front end module 350 is performed in an atmospheric environment. The communicative interface between the load lock chamber 340 and the transfer chamber 310, front end module 350 allows for two substrates to be transferred at a time.
Also shown in fig. 3 is a robot in the front end module 350 that is equipped to move the substrates and a stack for storing the substrates. The front end module 350 may also be connected to a substrate manufacturing line.
In this embodiment, the combination of a set of transfer chamber 310, pre-clean chamber 334, thermal process chamber 338, load lock chamber 340 and multiple chambers can improve throughput while reducing equipment costs. By staggering the duty cycles of the respective reaction chambers 321, 322, 323, the loading or unloading of one reaction chamber can be performed within the reaction cycle of another reaction chamber, thereby saving the waiting time and further improving the production efficiency.
FIG. 4 is a schematic plan view of an exemplary atomic layer deposition apparatus 400. As shown, the apparatus 400 is generally arranged to be spread around the transfer chamber 410. The transfer chamber 410 is equipped with a robot 415 for transferring substrates, such as wafers, between the transfer chamber 410 and the various chambers in communication therewith. The robot 415 is, for example, but not limited to, a multi-level dual arm robot to support the simultaneous transfer of multiple substrates between multiple chambers.
The five reaction chambers 421, 422, 423, 424, and 425 are respectively in communication with the transfer chamber 410 and are each independently closable. In the reaction chamber, a desired atomic layer is deposited on the surface of the substrate via reaction of the process gases. The deposition process is typically performed in a vacuum environment. The reaction chambers 421, 423, and 425 are each capable of depositing 4 substrates simultaneously, with respective communication interfaces with the transfer chamber 410 allowing two substrates to be loaded or unloaded at a time. The reaction chambers 422 and 424 are each capable of depositing 3 substrates simultaneously, and each communication interface with the transfer chamber 410 allows one substrate to be loaded or unloaded at a time. The substrate is moved inward or toward the communication interface by a rotary moving device in each reaction chamber. The transfer chamber also typically operates in a vacuum environment.
The transfer chamber 410 is also in communication with a pre-clean chamber 434 and a thermal treatment chamber 438. The precleaning chamber 434 is used to perform a cleaning process on a substrate that is ready for atomic layer deposition. The thermal processing chamber 438 is used to perform thermal processing, such as preheating or cooling, on a substrate to be subjected to atomic layer deposition or a substrate on which an atomic layer has been deposited.
The transfer chamber 410 is also in communication with the load lock chamber 440, the load lock chamber 440 is in communication with the front end module 450, and substrates can thus be transferred between the transfer chamber 410 and the front end module 450 via the load lock chamber 440. The load lock chamber 440 is equipped with a transfer device and a suction device. The transfer device may be, for example, but not limited to, a rotary robot or a sliding track. When the load lock chamber 440 needs to communicate with the transfer chamber 410, the load lock chamber 440 is transferred to a vacuum environment similar to the transfer chamber 410 by a pumping device. While the substrate transfer between the load lock chamber 440 and the front end module 450 is performed in an atmospheric environment. The communicative interface between the load lock chamber 440 and the transfer chamber 410, front end module 450 allows for two substrates to be transferred at a time.
Also shown in fig. 4 is a robot in the front end module 450 for moving substrates and a stack for storing substrates. The front end module 450 may also be connected to a substrate manufacturing line.
In this embodiment, the combination of a set of transfer chamber 410, pre-clean chamber 434, thermal process chamber 438, load lock chamber 440 and multiple chambers can increase throughput while reducing equipment costs. By staggering the duty cycles of the respective reaction chambers 421, 422, 423, 424, 425, the loading or unloading of one reaction chamber can be performed during the reaction cycle of another reaction chamber, thereby saving the waiting time and further improving the production efficiency.
Fig. 5 is a schematic plan view of an exemplary atomic layer deposition apparatus 500. As shown, the apparatus 500 is generally arranged to be spread around the transfer chamber 510. A robot 515 is provided in the transfer chamber 510 for transferring substrates, such as wafers, between the transfer chamber 510 and the various chambers in communication therewith. The robot 515 may be, for example and without limitation, a multi-level dual arm robot, to support the simultaneous transfer of multiple substrates between multiple chambers.
The five reaction chambers 521, 522, 523, 524, and 525 are respectively communicated with the transfer chamber 510 and each independently closable. In the reaction chamber, a desired atomic layer is deposited on the surface of the substrate via reaction of the process gases. The deposition process is typically performed in a vacuum environment. The reaction chambers 521, 523, and 525 are each capable of simultaneously depositing 4 substrates, and each communication interface with the transfer chamber 510 allows two substrates to be loaded or unloaded at a time, and the substrates are moved inward or toward the communication interface by a parallel moving device within the three reaction chambers. The reaction chambers 522 and 524 are each capable of depositing 3 substrates simultaneously, and each communication interface with the transfer chamber 510 allows one substrate to be loaded or unloaded at a time, and the substrates are moved inward or toward the communication interfaces by the rotating movement device within the two reaction chambers. The transfer chamber also typically operates in a vacuum environment.
The transfer chamber 510 is also in communication with the pre-clean chamber 534 and the thermal treatment chamber 538. The precleaning chamber 534 is used to perform and clean processes on substrates that are ready for atomic layer deposition. The thermal processing chamber 538 is used for performing thermal processing, such as preheating or cooling, on a substrate to be subjected to atomic layer deposition or a substrate on which an atomic layer has been deposited.
The transfer chamber 510 is also in communication with the load lock chamber 540, the load lock chamber 540 is in communication with the front end module 550, and substrates can thus be transferred between the transfer chamber 510 and the front end module 550 via the load lock chamber 540. The load lock chamber 540 is equipped with a transfer device and a suction device. The transfer device may be, for example, but not limited to, a rotary robot or a sliding track. When the load lock chamber 540 needs to communicate with the transfer chamber 510, the load lock chamber 540 is transferred to a vacuum environment similar to the transfer chamber 510 by a pumping device. And substrate transfer between the load lock chamber 540 and the front end module 550 is performed in an atmospheric environment. The communicative interface between the load lock chamber 540 and the transfer chamber 510, front end module 550 allows for two substrates to be transferred at a time.
Also shown in fig. 5 is a robot in the front end module 550 that is equipped to move the substrates and a stack for storing the substrates. The front end module 550 may also be connected to a substrate manufacturing line.
In this embodiment, the combination of a set of transfer chamber 510, pre-clean chamber 534, thermal process chamber 538, load lock chamber 540 and multiple chambers can improve throughput while reducing equipment costs. By staggering the duty cycles of the respective reaction chambers 521, 522, 523, 524, 525, the loading or unloading of one reaction chamber can be performed within the reaction cycle of another reaction chamber, thereby saving the waiting time and further improving the production efficiency.
FIG. 6 is a schematic plan view of an atomic layer deposition apparatus 600 according to an embodiment. As shown, the apparatus 600 is generally arranged to be spread around the transfer chamber 610. The transfer chamber 610 is equipped with a robot 615 for transferring substrates, such as wafers, between the transfer chamber 610 and the various chambers in communication therewith. The robot 615 is, for example and without limitation, a multi-level dual arm robot that supports the simultaneous transfer of multiple substrates between multiple chambers.
The three reaction chambers 621, 622, and 623 are respectively in communication with the transfer chamber and are each independently closable. In the reaction chamber, a desired atomic layer is deposited on the surface of a substrate, such as a wafer, through reaction of the process gases. The deposition process is typically performed in a vacuum environment. The three reaction chambers 621, 622, and 623 are each capable of simultaneously depositing 4 substrates. The communication interface between each reaction chamber and the transfer chamber 610 allows two substrates to be loaded or unloaded at a time. The substrate is moved inwards or towards the communication interface in the reaction chamber by a parallel moving device. The transfer chamber also typically operates in a vacuum environment.
The transfer chamber 610 also communicates with the pre-clean chamber 634 and the thermal treatment chamber 638. The precleaning chamber 634 is used to perform and clean processes on substrates that are ready for atomic layer deposition. The thermal processing chamber 638 is used for performing thermal processing, such as preheating or cooling, on a substrate to be subjected to atomic layer deposition or a substrate on which an atomic layer has been deposited.
The transfer chamber 610 also communicates with the load lock chamber 640, the load lock chamber 640 communicates with the front end module 650, and substrates can thus be transferred between the transfer chamber 610 and the front end module 650 via the load lock chamber 640. The load lock chamber 640 is provided with a transfer device and a suction device. The transfer device may be, for example, but not limited to, a rotary robot or a sliding track. When the load lock chamber 640 needs to communicate with the transfer chamber 610, the load lock chamber 640 is transferred to a vacuum environment similar to the transfer chamber 610 by a pumping device. While substrate transfer between the load lock chamber 640 and the front end module 650 is performed in an atmospheric environment. The communicative interface between the load lock chamber 640 and the transfer chamber 610, front end module 650 allows for two substrates to be transferred at a time.
Also shown in fig. 6 is a robot in the front end module 650 equipped to move substrates and a stack for storing substrates. The front end module 650 may also be connected to a substrate manufacturing line.
In this embodiment, the combination of a set of transfer chamber 610, pre-clean chamber 634, thermal process chamber 638, load lock chamber 640 and a plurality of reaction chambers can improve throughput while reducing equipment costs. By staggering the duty cycles of the respective reaction chambers 621, 622, 623, the loading or unloading of one reaction chamber can be performed during the reaction cycle of another reaction chamber, thereby saving the waiting time and further improving the production efficiency.
While various embodiments of the present invention have been illustrated and described, the present invention is not limited to these embodiments. The mere fact that certain features are recited in certain claims or embodiments does not indicate that a combination of other features in other claims or embodiments cannot be used to advantage. Numerous modifications, changes, variations, substitutions and equivalents will be apparent to those skilled in the art without departing from the spirit and scope of the invention as described in the claims.
Claims (8)
1. An atomic layer deposition apparatus, comprising:
a transfer chamber;
a pre-cleaning chamber, a heat treatment chamber, a loading locking chamber and a plurality of reaction chambers which are respectively communicated with the conveying chamber;
a front end module in communication with the load lock chamber;
wherein the transfer chamber is configured to be in a vacuum state, the load lock chamber comprising a gas evacuation device configured to place the load lock chamber in communication with the transfer chamber in a vacuum state;
depositing an atomic layer on a surface of a substrate via a reaction of a process gas in the plurality of reaction chambers;
the transfer chamber is equipped with a robot therein for transferring substrates between the transfer chamber and the pre-clean chamber, the thermal process chamber, the load lock chamber, and the plurality of reaction chambers;
the front end module is configured to automatically transfer substrates to and from the load lock chamber,
the plurality of reaction chambers are configured to be staggered in duty cycle from each other, and loading or unloading of one reaction chamber is performed during a reaction cycle of another reaction chamber.
2. The atomic layer deposition apparatus according to claim 1, wherein the transfer chamber and the plurality of reaction chambers are each independently closable.
3. The atomic layer deposition apparatus according to claim 1, wherein the robot is a multi-layer dual arm robot.
4. The atomic layer deposition apparatus according to claim 1, wherein the plurality of reaction chambers are each capable of simultaneously depositing 3-6 substrates.
5. The atomic layer deposition apparatus according to claim 1, wherein each of the plurality of reaction chambers is provided with a parallel movement device or a rotational movement device for moving the substrate.
6. The atomic layer deposition apparatus according to claim 1, wherein the communication interface between the transfer chamber and the plurality of reaction chambers allows one or two substrates to be transferred at a time.
7. The atomic layer deposition apparatus according to claim 1, wherein the communication interface between the transfer chamber and the load lock chamber allows for two substrates to be transferred at a time.
8. The atomic layer deposition apparatus according to claim 1, wherein the substrate is a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011079287.3A CN112111729A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011079287.3A CN112111729A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition apparatus |
| CN201410449141.1A CN105463406A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410449141.1A Division CN105463406A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112111729A true CN112111729A (en) | 2020-12-22 |
Family
ID=55601557
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011079287.3A Pending CN112111729A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition apparatus |
| CN201410449141.1A Pending CN105463406A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition equipment |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410449141.1A Pending CN105463406A (en) | 2014-09-04 | 2014-09-04 | Atomic layer deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN112111729A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11996307B2 (en) * | 2020-12-23 | 2024-05-28 | Applied Materials, Inc. | Semiconductor processing tool platform configuration with reduced footprint |
| CN114496901A (en) * | 2022-04-15 | 2022-05-13 | 拓荆科技(北京)有限公司 | Manipulator applied to coating equipment |
| CN115852336B (en) * | 2022-11-24 | 2023-10-31 | 广东汇成真空科技股份有限公司 | Workpiece conveying manipulator of mass-production ALD device and ALD device provided with baking oven |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101768731A (en) * | 2008-12-29 | 2010-07-07 | K.C.科技股份有限公司 | Atomic layer deposition apparatus |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| US8282334B2 (en) * | 2008-08-01 | 2012-10-09 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
| WO2011007580A1 (en) * | 2009-07-17 | 2011-01-20 | 株式会社アルバック | Substrate processing method |
| KR20120042919A (en) * | 2009-08-13 | 2012-05-03 | 김남진 | Apparatus for forming layer |
| US20130344688A1 (en) * | 2012-06-20 | 2013-12-26 | Zhiyuan Ye | Atomic Layer Deposition with Rapid Thermal Treatment |
| KR102197576B1 (en) * | 2012-11-06 | 2020-12-31 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus for spatial atomic layer deposition with recirculation and methods of use |
| CN204080102U (en) * | 2014-09-04 | 2015-01-07 | 沈阳拓荆科技有限公司 | Atomic layer deposition apparatus |
-
2014
- 2014-09-04 CN CN202011079287.3A patent/CN112111729A/en active Pending
- 2014-09-04 CN CN201410449141.1A patent/CN105463406A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101768731A (en) * | 2008-12-29 | 2010-07-07 | K.C.科技股份有限公司 | Atomic layer deposition apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 谷至华: "《薄膜晶体管（TFT）阵列制造技术》", 30 September 2007, 复旦大学出版社, pages: 131 - 132 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105463406A (en) | 2016-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104233226B (en) | A kind of atomic layer deposition apparatus | |
| TWI725976B (en) | Methods and apparatuses for temperature-indexed thin film deposition | |
| JP5683463B2 (en) | Atomic layer deposition apparatus and loading method | |
| US9631277B2 (en) | Atomic layer deposition carousel with continuous rotation and methods of use | |
| US10236198B2 (en) | Methods for the continuous processing of substrates | |
| CN104081514A (en) | Multi-chamber substrate processing systems | |
| US10253414B2 (en) | Liquid phase atomic layer deposition | |
| JP2016511797A (en) | Equipment and process confinement for spatially separated atomic layer deposition | |
| JP2014508224A (en) | Apparatus and method for atomic layer deposition | |
| EP1025278A1 (en) | Vertically-stacked process reactor and cluster tool system for atomic layer deposition | |
| EP2465972B1 (en) | Method and system for thin film deposition | |
| TWI676701B (en) | Film forming device and film forming method | |
| CN112111729A (en) | Atomic layer deposition apparatus | |
| KR20160123575A (en) | Apparatus for manufacturing electronic device, cleaning method and method of manufacturing electronic device using the cleaning method | |
| CN204080102U (en) | Atomic layer deposition apparatus | |
| JP6971887B2 (en) | Film formation method and film formation equipment | |
| JP2013055356A5 (en) | ||
| US10204790B2 (en) | Methods for thin film deposition | |
| WO2018210273A1 (en) | Device and method for deposition of atomic layers having the same plasma source | |
| CN212770954U (en) | Preheating type tubular PECVD equipment | |
| WO2015186319A1 (en) | Film-forming device, film-forming method, and memory medium | |
| KR101390963B1 (en) | Processing system for chemical vapor deposition | |
| TWI700391B (en) | Methods and apparatuses for thin film deposition | |
| CN112813418B (en) | Wafer atomic layer deposition control system based on ALD technology and efficient wafer production method | |
| KR20140108419A (en) | Apparatus for deposition atomic layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Applicant after: Tuojing Technology Co.,Ltd. Address before: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Applicant before: SHENYANG PIOTECH Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201222 |