CN105449052A - Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD - Google Patents
Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD Download PDFInfo
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- CN105449052A CN105449052A CN201410421706.5A CN201410421706A CN105449052A CN 105449052 A CN105449052 A CN 105449052A CN 201410421706 A CN201410421706 A CN 201410421706A CN 105449052 A CN105449052 A CN 105449052A
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Abstract
The invention provides a method for preparing a high-efficiency near-ultraviolet LED with an asymmetric current expansion layer by using MOCVD. The method, by designing a novel LED structure, improves current expansion in the horizontal direction so as to increase the luminous efficiency of the near-ultraviolet LED. The method comprises growing an asymmetric n-type current expansion layer between n-GaN and an InGaN/AlGaN multi-quantum well active region; and optimizing the current expansion layer to be (1) an n-type AlInGaN current expansion layer with gradually-changed asymmetric Al component, In component, and n doping, (2) a multi-period n-type AlInGaN/AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping, (3) a multi-period n-type InGaN/AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping, or (4) a multi-period n-type AlInGaN/GaN/AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping. The method effectively increases the luminous efficiency of the near-ultraviolet LED by designing the novel current expansion layer structure.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, a manufacture method near ultraviolet light-emitting diode, particularly relates to a kind of method adopting the preparation of MOCVD (Metal Organic Vapor extension) technology to have the high brightness near ultraviolet LED of unsymmetric structure current extending.
Background technology
Ultraviolet semiconductor light source not only will replace existing mercury lamp ultraviolet source and plays larger effect in industrial photocuring, photocatalyst, ultraviolet photolithographic, ultraviolet-sterilization, Water warfare, phototherapy etc., but also will develop the aspect purposes such as general illumination, light tweezer, plant growth, petroleum pipeline leak detection, archaeology application, discriminating be true and false.Semiconductor ultraviolet source, as the another great industry direction after semiconductor lighting, has caused the extensive concern of semiconductor optoelectronic industry.The U.S., Japan, Korea S etc. drop into huge strength invariably in the hope of occupying the commanding elevation of industry.Less input in this respect in China, with advanced level gap is larger in the world.From global semiconductor opto-electronics development trend, control formulation right and industry right of speech that upstream core technologies equal grasp industry rule, occupy industrial chain enormous profits space, and capture first chance in model change.China starts National Semiconductor illuminating engineering in June, 2003, the research work of UV-LED as one of them important content.During "the 10th five-years", Peking University once bore the National 863 problem of near ultraviolet LED, developed 380nm ~ 405nm near ultraviolet LED luminous power under 350mA and reached 110mW.During 11th Five-Year, 12, study ultraviolet LED further, obtain emission wavelength 280nm ~ 315nm ultraviolet emission.In addition, semiconducter research institute of the Chinese Academy of Sciences, Xiamen University, Qingdao Jie Shengdeng unit are also just being devoted to ultraviolet LED research, and the ultraviolet LED luminous power of 300nm has reached mW magnitude.Different from blue light, current ultraviolet LED is in the technical development phase, less-restrictive in patent and intellectual property, be beneficial to capture, the technology commanding elevation of the Fashion of Future.There is certain accumulation in the domestic equipment at ultraviolet LED, materials and devices, actively at present to have developed to application module.Guiding and supporting to seize the first opportunity in core technology of country was also needed before UV-LED forms extensive industry.
The matter of utmost importance that ultraviolet LED technology faces is that its light efficiency is low.The ultraviolet LED power output of wavelength 365nm is only the 5%-8% of input power.Ultraviolet LED electricity conversion for more than wavelength 385nm is significantly improved relative to short wavelength, but power output only has 15% of input power.The light efficiency how effectively improving ultraviolet LED becomes the focal issue of everybody concern.
Summary of the invention
The invention provides a kind of method that the MOCVD of employing technology prepares high brightness near ultraviolet light-emitting diode.By designing novel LED structure, between n-GaN and InGaN/AlGaN multi-quantum well active region, growing the current extending of Al component, In component and n doping gradual change, improve horizontal direction current expansion, effectively alleviating active area stress.And then realize the object improving near ultraviolet LED luminous efficiency.
Technical solution of the present invention: by introducing the N-shaped current extending of optimization between near ultraviolet LED n-GaN and active layer.By optimizing the structure of N-shaped current extending as adopted n-AlInGaN, n-AlInGaN/AlGaN superlattice, n-InGaN/AlGaN superlattice, n-AlInGaN/GaN/AlGaN multilayer superlattice structure, wherein Al component, In component and N-shaped doping gradual change.Optimal design current spread layer construction parameter: the parameter such as doping content of the growth thickness of each layer, Al component, In component, Si.The method comprises the following steps:
Step one, by Al in Metal Organic Vapor epitaxial reactor
2o
3in a hydrogen atmosphere, process 5 minutes at 1080 DEG C-1100 DEG C, then reduce temperature, at 530-550 DEG C, chamber pressure 500torr, at hydrogen (H for substrate
2) under atmosphere, the GaN resilient coating of three dimensional growth 20-30 nanometer thickness, then at 1000-1500 DEG C, grow 2-4 micron thickness n-GaN layer;
Step 2, at nitrogen (N
2) under atmosphere, at 750-850 DEG C, grow asymmetric Al component, In component and n to adulterate the N-shaped current extending of gradual change, optimize current spread layer construction as follows:
(1) the N-shaped Al of asymmetric Al component and In component and n doping gradual change
y1in
x1ga
1-y1-x1n current extending (wherein 0<y1≤y; 0<x1≤x), thickness in monolayer 15nm-30nm; Wherein Al component and In component increase with current extending growth thickness and linearly increase.
(2) the N-shaped multicycle Al of asymmetric Al component and In component and n doping gradual change
y2in
x2ga
1-x2-y2n/Al
y2ga
1-y2n superlattice (wherein 0<y2≤y; 0<x2≤x), superlattice structure periodicity is 1 to 10; Wherein Al component and In component increase and staged increase with current extending growth cycle.
(3) the N-shaped multicycle In of asymmetric Al component and In component and n doping gradual change
x3ga
1-x3n/Al
y3ga
1-y3n superlattice or quantum well structure (wherein 0<y3≤y; 0<x3≤x), superlattice structure periodicity is 1 to 10; Wherein Al component and In component increase and staged increase with current extending growth cycle.
(4) the N-shaped multicycle Al of asymmetric Al component and In component and n doping gradual change
y4in
x4ga
1-x4-y4n/GaN/Al
y4ga
1-y4n superlattice or quantum well structure (wherein 0<y4≤y; 0<x4≤x), superlattice structure periodicity is 1 to 10; Wherein Al component and In component increase and staged increase with current extending growth cycle.
Then 5-10 cycle In is grown
xga
1-xn/Al
yga
1-yn multi-quantum well active region, wherein 0<x≤0.05; 0<y≤0.05; On the active area, in a nitrogen atmosphere, at 950 degrees Celsius of growth p-AlGaN electronic barrier layers;
Step 3, in a hydrogen atmosphere, grows p-GaN at 950 DEG C-1040 DEG C.
Improve near ultraviolet LED current expansion effect by optimizing N-shaped current extending, and then effectively improve the antistatic effect of near ultraviolet LED.
Accompanying drawing explanation
Fig. 1 is the sectional elevation view of a kind of high brightness near ultraviolet light-emitting diode in the embodiment of the present invention 1;
Fig. 2 is the sectional elevation view of a kind of high brightness near ultraviolet light-emitting diode in the embodiment of the present invention 2;
Fig. 3 adopts New type of current extension layer near ultraviolet light-emitting diode UV-LED1 in the embodiment of the present invention 1, to adopt in the embodiment of the present invention 2 New type of current extension layer near ultraviolet light-emitting diode UV-LED2 and no current extension layer near ultraviolet light-emitting diode UV-LED luminous power with Injection Current change curve.
Embodiment
The invention provides a kind of method that the MOCVD of employing technology prepares high brightness near ultraviolet LED.By designing novel LED structure, between n-GaN and InGaN/AlGaN multi-quantum well active region, growing the current extending of Al component, In component and n doping gradual change, improve horizontal direction current expansion, effectively alleviating active area stress.And then realize the object improving near ultraviolet LED luminous efficiency.
Fig. 1 is that the embodiment of the present invention 1 one kinds adopts MOCVD technology to prepare the sectional elevation view with the high brightness near ultraviolet LED of unsymmetric structure current extending.Fig. 1 comprises Al
2o
3substrate 101, n-GaN102, n-AlInGaN current extending 103, InGaN/AlGaN multiple quantum well active layer 104, p-AlGaN electronic barrier layer 105, p-GaN106.Wherein N-shaped current extending In component, Al component are less than InGaN/AlGaN multi-quantum well active region In component and Al component; Fig. 2 is that the embodiment of the present invention 2 one kinds adopts MOCVD technology to prepare the vertical throwing face view with the high brightness near ultraviolet LED of unsymmetric structure current extending.Fig. 2 comprises Al
2o
3substrate 201, n-GaN202, n-AlInGaN/AlGaN superlattice structure current extending 203, InGaN/AlGaN multiple quantum well active layer 204, p-AlGaN electronic barrier layer 205, p-GaN206.Wherein N-shaped current extending In component, Al component are less than InGaN/AlGaN multi-quantum well active region In component and Al component; As long as N-shaped current extending adopts n-AlInGaN, n-AlInGaN/AlGaN superlattice of Al component, In component and n doping gradual change or quantum well structure, n-AlInGaN/GaN/AlGaN superlattice or quantum well structure or other structure to meet the principle of Al component, In component and n doping gradual change all within the scope of this patent protection.
Embodiment 1
Use Aixtron company, close coupling vertical reative cell MOCVD growing system.Use trimethyl gallium (TMGa) in growth course, trimethyl indium (TMIn), trimethyl aluminium (TMAl) as III source, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, two luxuriant magnesium (Cp
2mg) as p-type doped source, first in MOCVD reative cell by Al
2o
3substrate 101 is heated to 1080-1100 degree Celsius, at H
2lower process 5 minutes, then cools at 530-550 degree Celsius at Al
2o
3on substrate, chamber pressure 500torr, under hydrogen (H2) atmosphere, the GaN resilient coating after three dimensional growth 20-30 nanometer, grows 2-4 micron thickness n-GaN102 under 1000-1500 degree Celsius, at nitrogen (N
2) under atmosphere, under 750-850 degree Celsius, grow the n-Al of 15-30 nanometer thickness
xin
yga
1-x-yn current extending 103, electron concentration increases from 10 with current extending growth thickness
17cm
-3linearly be increased to 10
18cm
-3, wherein the span of Al component x is 0<x≤0.05, and the span of In component y is 0<y≤0.05; Then 5-10 cycle In is grown
0.05ga
0.95n/Al
0.05ga
0.95n multiple quantum well active layer 104, on this active layer, at nitrogen (N
2) under atmosphere, under 950 degrees Celsius, grow 15-30 nanometer thickness, hole concentration is greater than 10
18cm
-3p-Al
0.15ga
0.85n electronic barrier layer 105, finally at H
2under atmosphere, be the p-GaN106 of 100-500 nanometer at 950-1040 degree Celsius of lower growth thickness.
Embodiment 2
Use Aixtron company, close coupling vertical reative cell MOCVD growing system.Use trimethyl gallium (TMGa) in growth course, trimethyl indium (TMIn), trimethyl aluminium (TMAl) as III source, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, two luxuriant magnesium (Cp
2mg) as p-type doped source, first in MOCVD reative cell by Al
2o
3substrate 201 is heated to 1080-1100 degree Celsius, at H
2lower process 5 minutes, then cools at 530-550 degree Celsius at Al
2o
3on substrate, chamber pressure 500torr, hydrogen (H
2) under atmosphere, the GaN resilient coating after three dimensional growth 20-30 nanometer, grows 2-4 micron thickness n-GaN202 under 1000-1500 degree Celsius, at nitrogen (N
2) under atmosphere, under 750-850 degree Celsius, grow n-(3nm) Al in 10 cycles
xin
yga
1-x-yn/ (3nm) Al
xga
1-xn current extending 203, electron concentration increases from 10 with current extending superlattice period number
17cm
-3staged is increased to 10
18cm
-3, wherein the span of Al component x is 0<x≤0.05, and the span of In component y is 0<y≤0.05; In component x is respectively with periodicity increase: 0.01,0.01,0.02,0.02,0.03,0.03,0.04,0.04,0.05,0.05; Wherein Al component y is respectively with the increase of current extending periodicity: 0.01,0.01,0.02,0.02,0.03,0.03,0.04,0.04,0.05,0.05; Then 5-10 cycle In is grown
0.05ga
0.95n/Al
0.05ga
0.95n multiple quantum well active layer 204, on this active layer, at nitrogen (N
2) under atmosphere, under 950 degrees Celsius, grow 15-30 nanometer thickness, hole concentration is greater than 10
18cm
-3p-Al
0.15ga
0.85n electronic barrier layer 205, finally at H
2under atmosphere, be the p-GaN206 of 100-500 nanometer at 950-1040 degree Celsius of lower growth thickness.
In embodiment 2, superlattice structure current extending 203 is except adopting n-Al
xin
yga
1-x-yn/Al
xga
1-xbeyond N superlattice structure, other structures can be adopted in patent specification as N-shaped multicycle In
x3ga
1-x3n/Al
y3ga
1-y3n superlattice structure (wherein 0<y3≤y; 0<x3≤x); N-shaped multicycle Al
y4in
x4ga
1-x4-y4n/GaN/Al
y4ga
1-y4n superlattice structure (wherein 0<y4≤y; 0<x4≤x); Adopt the current extending of these superlattice structures effectively can improve luminous efficiency, reach the effect close with LED in embodiment 2.As shown in Figure 3, the photoelectric property that black light LED chip (UV-LED1) display adopting embodiment 1 technical scheme in the present invention to make is excellent, light efficiency improves 50% relative to not having the black light LED chip (UV-LED) of current extending as shown in Figure 3; The black light LED chip sample adopting the black light LED chip (UV-LED2) that in the present invention, embodiment 2 technical scheme makes to make relative to embodiment 1 technical scheme improves 20%.
Above-described embodiment is only and technological thought of the present invention and feature is described, it describes comparatively concrete and detailed, its object is to enable those of ordinary skill in the art understand content of the present invention and implement according to this, therefore only the scope of the claims of the present invention can not be limited with this, but therefore limitation of the scope of the invention can not be interpreted as.It should be noted that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made, namely all changes done according to disclosed spirit, must be encompassed in the scope of the claims of the present invention.
Claims (5)
1. the method adopting MOCVD technology to prepare high brightness near ultraviolet LED, it is characterized in that the n-type current extending growing novel asymmetric Al component, In component and n doping gradual change between n-GaN and InGaN/AlGaN multi-quantum well active region, the method comprises the following steps:
Step one, by Al in Metal Organic Vapor epitaxial reactor
2o
3in a hydrogen atmosphere, process 5 minutes at 1080 DEG C-1100 DEG C, then reduce temperature, at 530-550 DEG C, chamber pressure 500torr, at hydrogen (H for substrate
2) under atmosphere, the GaN resilient coating of three dimensional growth 20-30 nanometer thickness, then at 1000-1500 DEG C, grow 2-4 micron thickness n-GaN layer;
Step 2, at nitrogen (N
2) under atmosphere, at 750-850 DEG C, grow asymmetric Al component, In component and n to adulterate the N-shaped current extending of gradual change, then grow 5-10 cycle In
xga
1-xn/Al
yga
1-yn multi-quantum well active region, wherein 0<x≤0.05; 0<y≤0.05; On the active area, in a nitrogen atmosphere, at 950 degrees Celsius of growth p-AlGaN electronic barrier layers;
Step 3, in a hydrogen atmosphere, grows p-GaN at 950 DEG C-1040 DEG C.
2. a kind of MOCVD of employing technology according to claim 1 prepares the method for high brightness near ultraviolet LED, it is characterized in that: described n-type current extending adopts the n-Al of asymmetric Al component, In component and n doping gradual change
y1in
x1ga
1-y1-x1n single layer structure (wherein 0<y1≤y; 0<x1≤x), thickness in monolayer 15nm-30nm; Wherein Al component and In component increase with current extending growth thickness and linearly increase.
3. a kind of MOCVD of employing technology according to claim 1 prepares the method for high brightness near ultraviolet LED, it is characterized in that: described n-type current extending adopts the multicycle n-Al of asymmetric Al component, In component and n doping gradual change
y2in
x2ga
1-x2-y2n/Al
y2ga
1-y2n superlattice or quantum well structure (wherein 0<y2≤y; 0<x2≤x), superlattice or quantum well structure periodicity are 1 to 10; Wherein Al component and In component increase and staged increase with current extending growth cycle.
4. a kind of MOCVD of employing technology according to claim 1 prepares the method for high brightness near ultraviolet LED, it is characterized in that: described n-type current extending adopts the multicycle n-In of asymmetric Al component, In component and n doping gradual change
x3ga
1-x3n/Al
y3ga
1-y3n superlattice or quantum well structure (wherein 0<y3≤y; 0<x3≤x), superlattice or quantum well structure periodicity are 1 to 10; Wherein Al component and In component increase and staged increase with current extending growth cycle.
5. a kind of MOCVD of employing technology according to claim 1 prepares the method for high brightness near ultraviolet LED, it is characterized in that: described n-type current extending adopts multicycle n-Aly4Inx4Ga1-x4-y4N/GaN/Aly4Ga1-y4N superlattice or the quantum well structure (wherein 0<y4≤y of asymmetric Al component, In component and n doping gradual change; 0<x4≤x), superlattice or quantum well structure periodicity are 1 to 10; Wherein Al component and In component increase and staged increase with current extending growth cycle.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784188A (en) * | 2016-12-23 | 2017-05-31 | 东莞市中镓半导体科技有限公司 | A kind of preparation method of the near ultraviolet LED with composite electron barrier layer |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100244084A1 (en) * | 2009-03-24 | 2010-09-30 | Song Hyun Don | Light emitting device, light emitting device package and lighting system including the same |
| CN102148300A (en) * | 2011-03-17 | 2011-08-10 | 中国科学院半导体研究所 | Manufacturing method of ultraviolet LED (light-emitting diode) |
| CN102185064A (en) * | 2011-04-19 | 2011-09-14 | 武汉华炬光电有限公司 | AlGaN base deep ultraviolet light-emitting diode (LED) device using multiple quantum well electronic barrier layer to improve luminescent efficiency and manufacturing method of AlGaN base deep ultraviolet LED device |
| CN102664145A (en) * | 2012-05-16 | 2012-09-12 | 东莞市中镓半导体科技有限公司 | Method for growing asymmetric electron storing layer high-luminance luminous diode by metal organic compound gas phase epitaxy technology |
-
2014
- 2014-08-25 CN CN201410421706.5A patent/CN105449052B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100244084A1 (en) * | 2009-03-24 | 2010-09-30 | Song Hyun Don | Light emitting device, light emitting device package and lighting system including the same |
| CN102148300A (en) * | 2011-03-17 | 2011-08-10 | 中国科学院半导体研究所 | Manufacturing method of ultraviolet LED (light-emitting diode) |
| CN102185064A (en) * | 2011-04-19 | 2011-09-14 | 武汉华炬光电有限公司 | AlGaN base deep ultraviolet light-emitting diode (LED) device using multiple quantum well electronic barrier layer to improve luminescent efficiency and manufacturing method of AlGaN base deep ultraviolet LED device |
| CN102664145A (en) * | 2012-05-16 | 2012-09-12 | 东莞市中镓半导体科技有限公司 | Method for growing asymmetric electron storing layer high-luminance luminous diode by metal organic compound gas phase epitaxy technology |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784188A (en) * | 2016-12-23 | 2017-05-31 | 东莞市中镓半导体科技有限公司 | A kind of preparation method of the near ultraviolet LED with composite electron barrier layer |
| CN108470803B (en) * | 2018-03-20 | 2019-11-12 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer and production method of light emitting diode |
| CN108470803A (en) * | 2018-03-20 | 2018-08-31 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer and production method of light emitting diode |
| CN108987544A (en) * | 2018-05-31 | 2018-12-11 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN108987544B (en) * | 2018-05-31 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109360878A (en) * | 2018-08-27 | 2019-02-19 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
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| CN110112269A (en) * | 2019-03-29 | 2019-08-09 | 华灿光电股份有限公司 | LED epitaxial slice and preparation method thereof |
| CN111146318A (en) * | 2020-01-20 | 2020-05-12 | 江苏晶曌半导体有限公司 | Based on MoS2Thin layer ultraviolet light-emitting diode and manufacturing method thereof |
| CN114335278A (en) * | 2022-03-16 | 2022-04-12 | 至芯半导体(杭州)有限公司 | Epitaxial structure of UVB chip and application thereof |
| CN114335278B (en) * | 2022-03-16 | 2022-08-05 | 至芯半导体(杭州)有限公司 | Epitaxial structure of UVB chip and application thereof |
| CN117855352A (en) * | 2024-03-04 | 2024-04-09 | 山西中科潞安紫外光电科技有限公司 | LED epitaxial structure based on gradual change superlattice strain control and preparation method |
| CN117855352B (en) * | 2024-03-04 | 2024-05-14 | 山西中科潞安紫外光电科技有限公司 | LED epitaxial structure based on gradual change superlattice strain control and preparation method |
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