CN105448804A - Method for forming photoresistance pattern in groove, shallow trench isolation structure and manufacture method thereof - Google Patents
Method for forming photoresistance pattern in groove, shallow trench isolation structure and manufacture method thereof Download PDFInfo
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- CN105448804A CN105448804A CN201410415009.9A CN201410415009A CN105448804A CN 105448804 A CN105448804 A CN 105448804A CN 201410415009 A CN201410415009 A CN 201410415009A CN 105448804 A CN105448804 A CN 105448804A
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Abstract
The invention discloses a method for forming a photoresistance pattern in a groove, a shallow trench isolation structure and a manufacture method thereof. In the method for forming the photoresistance pattern in the groove, the groove comprises a first sidewall and a second sidewall which are arranged oppositely. The method for forming the photoresistance pattern in the groove comprises steps of: forming a photoresistance preparation layer in the groove; photoetching the photoresistance preparation layer in order to remove a portion, close to the second sidewall, of the photoresistance preparation layer and using the rest of the photoresistance preparation layer as a photoresistance layer; and forming a photoresistance reaction layer in the sidewall of the photoresistance layer, wherein the photoresistance reaction layer is formed by the reaction of chemical micro-shrink material and the photoresistance layer, and the photoresistance reaction layer and the photoresistance layer form the photoresistance pattern. In the method for forming the photoresistance pattern in the groove, the intensity of light irradiated onto the photoresistance preparation layer in the groove in the step of photoetching the photoresistance preparation layer is enhanced such that the light may easily pass through the photoresistance preparation layer to the bottom of the groove. Thus, the photoresistance preparation layer on the bottom of the groove is easy to be removed by photoetching and photoresistance residues in the groove are reduced.
Description
Technical field
The application relates to the technical field of semiconductor integrated circuit, in particular to a kind of method, groove isolation construction and preparation method thereof that form photoresistance figure in a groove.
Background technology
In the manufacturing process of semiconductor device, usually need to form photoresistance figure in a groove, then subsequent technique process is carried out to form semiconductor functional areas in the bottom of groove to exposed groove.Such as, after forming photoresistance figure in a groove, the degree of depth increasing groove is etched to exposed groove.Again such as, in the manufacturing process of groove isolation construction, first form the photoresistance figure of the half covering shallow trench, then ion implantation is carried out to form ion implanted region in the substrate bottom shallow trench to exposed shallow trench, and then improve the isolation effect of groove isolation construction.
Fig. 1 to Fig. 2 shows the schematic diagram of the method forming photoresistance figure in a groove.The method comprises the following steps: first, forms the photoresistance preparation layers 20 of the two side areas covering groove 10 ' and groove 10 ' ", and then form basal body structure as shown in Figure 1; Then, the part photoresistance preparation layers 20 " with in photoresistance preparation layers 20 " that part photoresistance preparation layers 20 " and being arranged in groove 20 " side in groove 10 ' is removed in photoetching forms opening 30 ', and photoresistance preparation layers 20 remaining in groove 10 ' " as photoresistance figure 20 ', and then is formed basal body structure as shown in Figure 2.
Fig. 3 shows the schematic diagram of the variation relation of photoetching position in light intensity and photoresistance preparation layers in lithography step.As can be seen from Figure 3, the light intensity being positioned at the center of above-mentioned opening is maximum, and when carrying out photoetching to the center more away from opening in photoresistance preparation layers, light intensity reduces gradually, and light intensity reaches minimum value on the position of groove.Visible, light in lithography step is difficult to the bottom being irradiated to groove, cause lithography step to be difficult to the photoresistance preparation layers of the bottom of removing groove, thus produce photoresistance residue (footing effect) in the bottom of groove, and then reduce the performance of semiconductor device.Such as, in the manufacturing process of groove isolation construction, the bottom of groove produces photoresistance residue and can hinder and inject ion and enter substrate bottom shallow trench, and then reduces the isolation effect of groove isolation construction.
Along with the size of semiconductor device is more and more less, the characteristic size of groove reduces thereupon, cause the size of the photoresistance figure formed in a groove more and more less, the intensity being irradiated to the light in the photoresistance preparation layers in groove in lithography step is also more and more lower, and then causes footing effect more and more significant.At present, technical staff attempts the thickness by reducing photoresistance preparation layers and reduces the wavelength that photoetching institute adopts light source, and to the photoresistance residue in minimizing groove, but effect is very limited.
Summary of the invention
The application aims to provide a kind of method, groove isolation construction and preparation method thereof that form photoresistance figure in a groove, to reduce the photoresistance residue in groove.
To achieve these goals, this application provides a kind of method forming photoresistance figure in a groove, its further groove comprises the first side wall and the second sidewall that are oppositely arranged, and the method comprises: form photoresistance preparation layers in a groove; Photoetching photoresistance preparation layers to remove the part near the second sidewall in photoresistance preparation layers, and will remain photoresistance preparation layers as photoresist layer; The sidewall of photoresist layer is formed photoresistance conversion zone, and photoresistance conversion zone is reacted by chemical micro material and photoresist layer and is formed, and photoresistance conversion zone and photoresist layer form photoresistance figure.
Further, in said method, the step forming photoresistance conversion zone comprises: between photoresist layer and the second sidewall, form chemical micro material; Photoresist layer and chemical micro material are toasted, to form photoresistance conversion zone; And remove remaining chemical micro material.
Further, in said method, formed in the step of chemical micro material between photoresist layer and the second sidewall, form the chemical micro material covering photoresist layer simultaneously.
Further, in said method, formed in the step of photoresistance conversion zone, form the photoresistance conversion zone that thickness is 1/8 ~ 1/4 of the width of groove.
Further, in said method, in the step of baking, baking temperature is 80 DEG C ~ 200 DEG C, and baking time is 30 ~ 320s.
Further, in said method, photoresistance preparation layers is the photoresist of silane-group containing, silicon alkoxyl or cage type siloxanes; Chemistry micro material is the macromolecular material containing alkyl amino.
Further, in said method, adopt wet processing to remove chemical micro material, the solution adopted in wet processing is water or the aqueous solution containing surfactant.
Further, in said method, formed in the step of photoresistance preparation layers in a groove, form the photoresistance preparation layers of the two side areas covering groove simultaneously.
Further, in said method, in the step of photoetching photoresistance preparation layers, the photoresistance preparation layers of the second sidewall away from the side of the first side wall is removed in simultaneously photoetching, and using the first side wall away from photoresistance preparation layers in the photoresistance preparation layers of the second sidewall side and the first side wall as photoresist layer.
Further, in said method, the thickness being positioned at the photoresist layer on the first side wall is 1/8 ~ 1/2 of the width of groove.
Present invention also provides a kind of manufacture method of groove isolation construction, comprise and form shallow trench in the substrate, and in shallow trench, form the step of isolated substance layer, wherein before the step forming isolated substance layer, this manufacture method also comprises: in shallow trench, form photoresistance figure, and the method wherein forming photoresistance figure is the above-mentioned method forming photoresistance figure in a groove of the application; Ion implantation is carried out to substrate exposed in shallow trench; And remove photoresistance figure.
Further, in above-mentioned manufacture method, formed in the step of photoresistance figure, form the photoresistance figure that thickness is 1/2 of the width of shallow trench.
Present invention also provides a kind of groove isolation construction, this groove isolation construction is made by the manufacture method of the above-mentioned groove isolation construction of the application.
The technical scheme of application the application, by the photoresistance preparation layers in photoetching groove to form photoresist layer on the first side wall of groove, and formed on the sidewall of photoresist layer and react by chemical micro material and photoresist layer the photoresistance conversion zone formed, the thickness of photoresist layer in the photoresistance figure be made up of photoresistance conversion zone and photoresist layer is reduced, and the opening formed in photoresistance preparation layers by photoetching is moved to the direction near the first side wall, simultaneously because the light intensity of the center being positioned at opening in the step of photoetching is maximum and center light intensity more away from opening is less, thus cause the light intensity be irradiated in the step of photoetching in the photoresistance preparation layers in groove to be increased, light is caused more easily to irradiate through photoresistance preparation layers until the bottom of groove, and then the photoresistance preparation layers of bottom portion of groove is removed in easier photoetching, decrease the photoresistance residue in groove.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows in the method for the existing photoresistance of formation in a groove figure, forms the cross-sectional view of the matrix after the photoresistance preparation layers of the two side areas covering groove and groove;
Fig. 2 shows photoetching and removes the part photoresistance preparation layers in groove shown in Fig. 1 and be positioned at the part photoresistance preparation layers of groove side, and using the cross-sectional view of photoresistance preparation layers remaining in groove as the matrix after photoresistance figure;
Fig. 3 shows the schematic diagram of the variation relation of photoetching position in light intensity and photoresistance preparation layers in lithography step;
Fig. 4 shows the schematic flow sheet forming the method for photoresistance figure in a groove that the application's execution mode provides;
Fig. 5 shows in the method for the photoresistance of the formation in a groove figure that the application's execution mode provides, and forms the cross-sectional view of the matrix after photoresistance preparation layers in a groove;
Fig. 6 shows photoresistance preparation layers shown in photoetching Fig. 5 to remove the part near the second sidewall in photoresistance preparation layers, and using the cross-sectional view of residue photoresistance preparation layers as the matrix after photoresist layer;
Fig. 7 shows the cross-sectional view of the matrix to form chemical micro material between photoresist layer and the second sidewall and on photoresist layer after;
Fig. 8 shows the cross-sectional view of the photoresist layer shown in Fig. 7 and chemical micro material being toasted to the matrix after forming photoresistance conversion zone;
Fig. 9 shows the cross-sectional view of the matrix after removing the remaining chemical micro material shown in Fig. 8;
Figure 10 shows the schematic flow sheet of the manufacture method of the groove isolation construction that the application's execution mode provides.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
As what introduce in background technology, formed in a groove in the process of photoresistance figure and can produce photoresistance residue in the bottom of groove, this photoresistance residue can reduce the performance of semiconductor device.Present inventor studies for the problems referred to above, proposes a kind of method forming photoresistance figure in a groove.Groove in the method comprises the first side wall and the second sidewall that are oppositely arranged, and as shown in Figure 4, the method comprises: form photoresistance preparation layers in a groove; Photoetching photoresistance preparation layers to remove the part near the second sidewall in photoresistance preparation layers, and will remain photoresistance preparation layers as photoresist layer; The sidewall of photoresist layer is formed photoresistance conversion zone, and photoresistance conversion zone is reacted by chemical micro material and photoresist layer and is formed, and photoresistance conversion zone and photoresist layer form photoresistance figure.
Said method by the photoresistance preparation layers in photoetching groove to form photoresist layer on the first side wall of groove, and formed on the sidewall of photoresist layer and react by chemical micro material and photoresist layer the photoresistance conversion zone formed, the thickness of photoresist layer in the photoresistance figure be made up of photoresistance conversion zone and photoresist layer is reduced, and the opening formed in photoresistance preparation layers by photoetching is moved to the direction near the first side wall, simultaneously because the light intensity of the center being positioned at opening in the step of photoetching is maximum and center light intensity more away from opening is less, thus cause the light intensity be irradiated in the step of photoetching in the photoresistance preparation layers in groove to be increased, light is caused more easily to irradiate through photoresistance preparation layers until the bottom of groove, and then the photoresistance preparation layers of bottom portion of groove is removed in easier photoetching, decrease the photoresistance residue in groove.
Illustrative embodiments according to the application will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, there is provided these execution modes be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expand the thickness in layer and region, and use the device that identical Reference numeral represents identical, thus will omit description of them.
Fig. 5 to Fig. 9 shows in the method for the photoresistance of the formation in a groove figure that the application's execution mode provides, the cross-sectional view of the matrix obtained after each step.Below in conjunction with Fig. 5 to Fig. 9, further illustrate the method forming photoresistance figure in a groove that the application's execution mode provides.
First, in groove 10, form photoresistance preparation layers 21 ', and then form basal body structure as shown in Figure 5.Above-mentioned groove 10 can be formed in semiconductor device district, and such as groove 10 is formed to form shallow trench in substrate, and such as groove 10 is formed in dielectric layer to form the through hole etc. of interconnection layer again.The shape of above-mentioned groove 10 can be inverted trapezoidal or U-shaped etc., exemplarily, with the shape of low groove 10 for inverted trapezoidal.
In the step forming above-mentioned photoresistance preparation layers 21 ', one preferred embodiment in, form the photoresistance preparation layers 21 ' (as shown in Figure 5) of the two side areas covering groove 10 and groove 10 simultaneously.Above-mentioned photoresistance preparation layers 21 ' can be photoresist common in this area, and in a preferred embodiment, above-mentioned photoresistance preparation layers 21 ' is silane-group containing, the photoresist of silicon alkoxyl or cage type siloxanes.The technique forming above-mentioned photoresistance preparation layers 21 ' can be spin coating proceeding, and above-mentioned technique is state of the art, does not repeat them here.
After completing the step forming photoresistance preparation layers 21 ' in groove 10, photoresistance preparation layers 21 ' shown in photoetching Fig. 5 is to remove the part near the second sidewall in photoresistance preparation layers 21 ', and photoresistance preparation layers 21 ' will be remained as photoresist layer 21, and then form basal body structure as shown in Figure 6.In a preferred embodiment, the photoresistance preparation layers 21 ' of the second sidewall away from the side of the first side wall is removed in simultaneously photoetching, and using the first side wall away from photoresistance preparation layers 21 ' in the photoresistance preparation layers 21 ' of the second sidewall side and the first side wall as photoresist layer 21 (as shown in Figure 6).
Those skilled in the art can set the thickness of above-mentioned photoresist layer 21 according to the instruction of the application, in a preferred embodiment, form photoresist layer 21 thickness be 1/8 ~ 1/2 of the width of groove 10.Wherein, the thickness of photoresist layer 21 refers to that photoresist layer 21 is along the thickness in the sidewall direction perpendicular to photoresist layer 21, and the width of groove 10 refers to the ultimate range between the first side wall of groove 10 and the second sidewall.
The step forming above-mentioned photoresist layer 21 comprises: first photolithography plate is aimed at photoresistance preparation layers 21 ', with the photoresistance preparation layers 21 ' making the pattern alignment in photolithography plate to be removed; Then open the light source of mask aligner, make the figure in light transmission photolithography plate be irradiated to photoresistance preparation layers 21 ' to be removed, and make photoresistance preparation layers 21 ' react (and producing exposure); Developer solution etching is finally adopted to remove photoresistance preparation layers 21 ' to be removed, and using photoresistance preparation layers 21 ' on the first side wall as photoresist layer 21.The parameter of above-mentioned technique can set according to prior art, does not repeat them here.
Complete photoetching photoresistance preparation layers 21 ' to remove the part near the second sidewall in photoresistance preparation layers 21 ', and using residue photoresistance preparation layers 21 ' as photoresist layer 21 step after, the sidewall of the photoresist layer 21 shown in Fig. 6 forms photoresistance conversion zone 23, photoresistance conversion zone 23 is reacted by chemical micro material 40 and photoresist layer 21 and is formed, and photoresistance conversion zone 23 and photoresist layer 21 form photoresistance figure 20.The step forming above-mentioned photoresistance conversion zone 23 comprises: between photoresist layer 21 and the second sidewall, form chemical micro material 40, preferably forms the chemical micro material 40 covering photoresist layer 21 simultaneously, and then forms basal body structure as shown in Figure 7; Photoresist layer 21 and chemical micro material 40 are toasted, to form photoresistance conversion zone 23, and then forms basal body structure as shown in Figure 8; And remove remaining chemical micro material 40, form basal body structure as shown in Figure 9.
Above-mentioned chemical micro material 40 refer to can with the macromolecular material of photoresist generation cross-linking reaction, those skilled in the art can select the kind of above-mentioned chemical micro material 40 according to the instruction of the application.In a preferred embodiment, above-mentioned chemical micro material 40 is the macromolecular material containing alkyl amino.More preferably, above-mentioned chemical micro material 40 is the acrylate containing alkyl amino or the methacrylic acid containing alkyl amino.
When toasting above-mentioned photoresist layer 21 and chemical micro material 40, can there is cross-linking reaction in above-mentioned photoresist layer 21 and chemical micro material 40, thus on the sidewall of photoresist layer 21, form photoresistance conversion zone 23.Those skilled in the art can set the thickness of above-mentioned photoresistance conversion zone 23 according to the instruction of the application, in a preferred embodiment, form photoresistance conversion zone 23 thickness be 1/8 ~ 1/4 of the width of groove 10.Wherein, the thickness of photoresistance conversion zone 23 refers to that photoresistance conversion zone 23 is along the thickness in the sidewall direction perpendicular to photoresistance conversion zone 23, and the width of groove 10 refers to the ultimate range between the first side wall of groove 10 and the second sidewall.
The process conditions of above-mentioned baking can set according to the thickness for forming photoresistance conversion zone 23.When the thickness of formed photoresistance conversion zone 23 is 1/8 ~ 1/4 of the width of groove 10, one preferred embodiment in, baking temperature is 80 DEG C ~ 200 DEG C, and baking time is 30 ~ 320s.Adopt above-mentioned process conditions that chemical micro material 40 and photoresistance preparation layers 21 ' not only can be made cross-linking reaction can to occur fully to form the photoresistance conversion zone 23 with setting thickness, and the bond strength of the photoresistance conversion zone 23 formed and photoresist layer 21 is higher.
The technique removing remaining chemical micro material 40 is wet processing, and the solution that wet processing adopts is relevant with the kind of adopted chemical micro material 40.When above-mentioned chemical micro material 40 is containing the macromolecular material of alkyl amino, one preferred embodiment in, the solution that wet processing adopts is water or the water containing surfactant.Above-mentioned solution can react to remove remaining chemical micro material 40 by above-mentioned chemical micro material 40, above-mentioned solution can not react with photoresist layer 21 and photoresistance conversion zone 23 simultaneously, makes above-mentioned solution can not cause damage to photoresist layer 21 and photoresistance conversion zone 23.
Present invention also provides a kind of manufacture method of groove isolation construction, comprise and form shallow trench in the substrate, and in shallow trench, form the step of isolated substance layer, wherein before the step forming isolated substance layer, this manufacture method also comprises: in shallow trench, form photoresistance figure, wherein forms the method that method the application of photoresistance figure is above-mentioned; Ion implantation is carried out to substrate exposed in shallow trench; And remove photoresistance figure.In this manufacture method, the photoresistance residue formed bottom groove isolation construction further groove reduced, thus decrease photoresistance residue to injecting the inhibition of ion, and then improve the isolation effect of groove isolation construction.
Figure 10 show the application's execution mode the schematic flow sheet of the manufacture method of groove isolation construction is provided.The manufacture method of the groove isolation construction that the application provides is further illustrated below in conjunction with Figure 10.
First, shallow trench is formed in the substrate.The shape of above-mentioned shallow trench can be inverted trapezoidal or U-shaped etc.The method forming above-mentioned shallow trench has a variety of, and in the optional execution mode of one, the step forming above-mentioned shallow trench comprises: first on substrate, form mask layer; Then photoetching is carried out to this mask layer, to form the opening corresponding with the position for forming shallow trench in mask layer; Last along opening etched substrate, to form shallow trench in the substrate.Above-mentioned technique can set according to prior art, does not repeat them here.Above-mentioned substrate can be monocrystalline silicon, silicon-on-insulator (SOI) or germanium silicon (SiGe) etc.Exemplarily, in the present embodiment, select monocrystalline silicon as the material of substrate.
Then, adopt the method forming photoresistance figure in a groove that the application is above-mentioned, in above-mentioned shallow trench, form photoresistance figure.The method forming photoresistance figure refers to the above-mentioned record of method about forming photoresistance figure in a groove of the application, does not repeat them here.
The thickness of above-mentioned photoresistance figure can set according to the process window of follow-up ion implantation.In a preferred embodiment, form photoresistance figure thickness be 1/2 of the width of groove.Wherein, the thickness of photoresistance figure refers to that photoresistance figure edge is perpendicular to the thickness in the sidewall direction of photoresistance figure, and the width of groove refers to the ultimate range between the first side wall of groove and the second sidewall.
Form the step of photoresistance figure in shallow trench after, ion implantation is carried out to substrate exposed in shallow trench.The process conditions of above-mentioned ion implantation can set according to prior art.In the optional execution mode of one, in above-mentioned ion implantation, injection ion is carbon, and the dosage range injecting ion is 1.0E+12 ~ 1.0E+13cm
-2, the energy range injecting ion is 100 ~ 400Kev.
After exposed substrate carries out the step of ion implantation in shallow trench, remove photoresistance figure.The method removing above-mentioned photoresistance figure can be dry process and wet processing.In dry process, for the ashing dry process of oxygen plasma, it is the object being realized removing photoresist by plasma collision photoresist.In wet processing, normally reacted by reagent and photoresist and realize the object except photoresist, the solution that wherein wet processing adopts can be N-methyl 2-pyrrolones (NMP).When adopting N-methyl 2-pyrrolones to remove above-mentioned photoresistance figure, in a kind of optional execution mode, comprise the following steps: by rotary spray method N-methyl 2-pyrrolones is evenly sprayed on the device comprising photoresistance figure, react with photoresistance figure at the temperature of 70 ~ 80 DEG C, the reaction time is 30-120 second; Then adopt washed with de-ionized water device, remove residual photoresistance figure.
Finally, in shallow trench, form isolated substance layer, form groove isolation construction.Above-mentioned spacer medium layer can be the common dielectric material in this area, such as Si
3n
4, the technique forming spacer medium layer includes but not limited to chemical vapour deposition (CVD), evaporation, the above-mentioned technique of sputtering are prior art in this area, does not repeat them here.
Present invention also provides a kind of groove isolation construction, this groove isolation construction is made by the groove isolation construction manufacturing method that the application is above-mentioned.Photoresistance residue bottom this groove isolation construction further groove is reduced, thus decreases photoresistance residue to the obstruction injecting ion, and then improves the isolation effect of groove isolation construction.
As can be seen from the above description, the application's the above embodiments achieve following technique effect:
(1) by the photoresistance preparation layers in photoetching groove to form photoresist layer on the first side wall of groove, and formed on the sidewall of photoresist layer and react by chemical micro material and photoresist layer the photoresistance conversion zone formed, the thickness of photoresist layer in the photoresistance figure be made up of photoresistance conversion zone and photoresist layer is reduced, and the opening formed in photoresistance preparation layers by photoetching is moved to the direction near the first side wall, simultaneously because the light intensity of the center being positioned at opening in the step of photoetching is maximum and center light intensity more away from opening is less, thus cause the light intensity in the photoresistance preparation layers that to be irradiated in the step of photoetching in groove to be increased, light is caused more easily to irradiate through photoresistance preparation layers until the bottom of groove, and then the photoresistance preparation layers of bottom portion of groove is removed in easier photoetching, decrease the photoresistance residue in groove.
(2) technical scheme that the application provides breaches the restriction of photoetching process to the size of groove, is conducive to the characteristic size reducing groove further, and then is conducive to the integrated level improving device.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (13)
1. form a method for photoresistance figure in a groove, described groove comprises the first side wall and the second sidewall that are oppositely arranged, and it is characterized in that, described method comprises:
Photoresistance preparation layers is formed in described groove;
Photoresistance preparation layers described in photoetching to remove the part near described second sidewall in described photoresistance preparation layers, and will remain described photoresistance preparation layers as photoresist layer;
The sidewall of described photoresist layer is formed photoresistance conversion zone, and described photoresistance conversion zone is reacted by chemical micro material and described photoresist layer and is formed, and described photoresistance conversion zone and described photoresist layer form described photoresistance figure.
2. method according to claim 1, is characterized in that, the step forming described photoresistance conversion zone comprises:
Chemical micro material is formed between described photoresist layer and described second sidewall;
Described photoresist layer and chemical micro material are toasted, to form described photoresistance conversion zone; And
Remove remaining described chemical micro material.
3. method according to claim 2, is characterized in that, is formed in the step of described chemical micro material between described photoresist layer and the second sidewall, forms the chemical micro material covering described photoresist layer simultaneously.
4. method according to claim 2, is characterized in that, is formed in the step of described photoresistance conversion zone, forms the described photoresistance conversion zone that thickness is 1/8 ~ 1/4 of the width of described groove.
5. method according to claim 4, is characterized in that, in the step of described baking, baking temperature is 80 DEG C ~ 200 DEG C, and baking time is 30 ~ 320s.
6. method according to any one of claim 1 to 5, is characterized in that,
Described photoresistance preparation layers is the photoresist of silane-group containing, silicon alkoxyl or cage type siloxanes;
Described chemical micro material is the macromolecular material containing alkyl amino.
7. method according to claim 2, is characterized in that, adopts wet processing to remove described chemical micro material, and the solution adopted in described wet processing is water or the aqueous solution containing surfactant.
8. method according to claim 1, is characterized in that, is formed in the step of photoresistance preparation layers in described groove, forms the photoresistance preparation layers of the two side areas covering described groove simultaneously.
9. method according to claim 8, it is characterized in that, in the step of photoresistance preparation layers described in photoetching, the photoresistance preparation layers of described second sidewall away from the side of described the first side wall is removed in simultaneously photoetching, and using described the first side wall away from photoresistance preparation layers in the photoresistance preparation layers of described second sidewall side and described the first side wall as photoresist layer.
10. method according to claim 9, is characterized in that, the thickness being positioned at the photoresist layer on described the first side wall is 1/8 ~ 1/2 of the width of described groove.
The manufacture method of 11. 1 kinds of groove isolation constructions, comprises and forms shallow trench in the substrate, and forms the step of isolated substance layer in described shallow trench, it is characterized in that, before the step forming described isolated substance layer, described manufacture method also comprises:
In described shallow trench, form photoresistance figure, wherein form the method for method according to any one of claim 1 to 10 of described photoresistance figure;
Ion implantation is carried out to substrate exposed in described shallow trench; And
Remove described photoresistance figure.
12. manufacture methods according to claim 11, is characterized in that, are formed in the step of described photoresistance figure, form the photoresistance figure that thickness is 1/2 of the width of described shallow trench.
13. 1 kinds of groove isolation constructions, is characterized in that, described groove isolation construction is made by the manufacture method described in claim 11 or 12.
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| US20090203224A1 (en) * | 2008-02-08 | 2009-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Si Device Making Method By Using A Novel Material For Packing and Unpacking Process |
| CN103258795A (en) * | 2013-03-15 | 2013-08-21 | 上海华力微电子有限公司 | Technological method capable of preventing shortcomings on photoresist during wet etching |
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| CN101197375A (en) * | 2007-12-28 | 2008-06-11 | 上海宏力半导体制造有限公司 | Mask read-only memory and its manufacturing method |
| US20090203224A1 (en) * | 2008-02-08 | 2009-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Si Device Making Method By Using A Novel Material For Packing and Unpacking Process |
| CN103258795A (en) * | 2013-03-15 | 2013-08-21 | 上海华力微电子有限公司 | Technological method capable of preventing shortcomings on photoresist during wet etching |
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