CN105397613B - A kind of method for keeping grinder station grinding rate balance - Google Patents
A kind of method for keeping grinder station grinding rate balance Download PDFInfo
- Publication number
- CN105397613B CN105397613B CN201510703181.9A CN201510703181A CN105397613B CN 105397613 B CN105397613 B CN 105397613B CN 201510703181 A CN201510703181 A CN 201510703181A CN 105397613 B CN105397613 B CN 105397613B
- Authority
- CN
- China
- Prior art keywords
- grinding
- pad
- rate
- abrasive disk
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to cmp field, and in particular to a kind of method of holding grinder station grinding rate balance, the grinder station includes abrasive disk, grinding pad, grinding head and grinding mat trimmer, and methods described includes：One semiconductor devices to be ground is provided；The semiconductor devices is positioned on the grinder station, to carry out chemical mechanical milling tech to the semiconductor devices；Wherein, using the pressurization function of the grinding head, by adjusting pressure of the grinding head for abrasive disk, to make up grinding pad with grinding mat trimmer with the loss of grinding rate caused by lifetime change, so as to keep the balance of grinding rate.
Description
Technical field
The present invention relates to cmp field, and in particular to a kind of method of holding grinder station grinding rate balance.
Background technology
During cmp (CMP), with the increasing in grinding pad and grinding mat trimmer life-span (Lifetime)
Plus, the raceway groove of grinding pad surface is gradually become shallower as, the sharpness of diamond wheel is gradually lowered on grinding mat trimmer, and silicon chip is ground
Mill speed also can gradually reduce that (grinding rate as shown in Figure 2 is with the variation tendency line in abrasive disk life-span, and grinding rate shown in Fig. 3
With the variation tendency line of service-life of grinding pad), therefore as PM cycle grindings rate can also show cyclically-varying (such as Fig. 1 institutes
Show).But with the raising of chip integration, line width narrows, and the window of silicon wafer thickness is also less and less after grinding, so for
Grinding rate stability requirement also more and more higher.We can use product for the continuous Pirun of board to correct grinding rate at present
Change, so sacrifices production capacity, equally also sacrifices the quality that piece is produced in part, while the risk that Pirun production pieces are scrapped can also be improved, institute
To need to make grinding rate in CMP process of lapping to tend towards stability, it just can guarantee that the stabilization of thickness after silicon chip grinding to ensure product
Quality.
Grinding rate during CMP can be expressed with Preston empirical equations, i.e. R=kPv, wherein R are grinding speed
Rate, P is added pressure, and v is the relative velocity of silicon chip and polishing pad, and k and grinding pad, lapping liquid, grinding mat trimmer etc.
It is relevant.In a PM cycle, the k in Preston empirical equations is gradually reduced, so present invention contemplates that passing through grinding head pair
The balance of grinding rate is maintained to solve the PM of grinding rate as shown in Figure 1 in the corresponding increase of abrasive disk (Platen) pressure
Cycle effects.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of method for keeping grinder station grinding rate balance, by increasing
Plus grinding head makes up grinding pad and grinding mat trimmer for the pressure of abrasive disk with the loss of lifetime change grinding rate, from
And reach the balance of grinding rate.
The technical purpose of the present invention is realized by following technological means：
A kind of method for keeping grinder station grinding rate balance, it is characterised in that the grinder station includes abrasive disk, ground
Mill pad, grinding head and grinding mat trimmer, methods described include：
One semiconductor devices to be ground is provided；
The semiconductor devices is positioned on the grinder station, ground with carrying out chemical machinery to the semiconductor devices
Grinding process；Wherein
Using the pressurization function of the grinding head, by adjusting pressure of the grinding head for abrasive disk, to make up grinding pad
With loss of the grinding mat trimmer with grinding rate caused by lifetime change, so as to keep the balance of grinding rate.
It is preferred that, above-mentioned method, wherein, pressure of the grinding head to abrasive disk is adjusted according to a formula, to keep
The balance of grinding rate, the formula is specially：
Wherein, Pi is real-time pressure of the grinding head in process of lapping to abrasive disk；
PBeginInitial pressure of the grinding head to abrasive disk before starting for grinding；
RBeginFor the initial grinding rate of grinding pad and grinding mat trimmer；
REventuallyGrinding rate during the maximum use time of grinding processing procedure permission is reached for grinding pad and grinding mat trimmer；
K is a constant；
V is grinding rate of the grinding pad relative to abrasive disk；
tiPadFor the real-time use time of grinding pad；
tiDiskFor the real-time use time of grinding mat trimmer；
TPadThe maximum use time allowed for grinding pad in grinding processing procedure；
TDiskThe maximum use time allowed for grinding mat trimmer in grinding processing procedure；
A is the scale parameter that grinding pad is contributed with grinding mat trimmer for grinding rate.
It is preferred that, above-mentioned method, wherein, constant k is relevant with grinding layer hardness, polishing fluid and polishing pad.
It is preferred that, above-mentioned method, wherein, parameter a is relevant with the grinding rate of the soft or hard and grinding mat trimmer of grinding pad.
It is preferred that, above-mentioned method, wherein, the grinding pad is used for bearing semiconductor device, with to the semiconductor device
The surface of part carries out cmp.
It is preferred that, above-mentioned method, wherein, the abrasive disk is used for grinding pad described in fixed bearing.
It is preferred that, above-mentioned method, wherein, the grinding head is used to the semiconductor devices being pressed on the grinding pad
On be ground.
It is preferred that, above-mentioned method, wherein, the grinding mat trimmer is used to repair the grinding pad.
Compared with prior art, it is an advantage of the invention that：
The method for a kind of holding grinder station grinding rate balance that the present invention is provided, by increasing grinding head for abrasive disk
Pressure make up grinding pad and grinding mat trimmer with the loss of lifetime change grinding rate, so as to reach the flat of grinding rate
Weighing apparatus.
Brief description of the drawings
The step flow chart for the method that Fig. 1 balances for the holding grinder station grinding rate of the present invention；
Fig. 2 is grinding rate in embodiment with PM cycle cyclically-varying tendency charts；
Fig. 3 is variation tendency line of the grinding rate in embodiment with the abrasive disk life-span；
Fig. 4 is variation tendency line of the grinding rate in embodiment with service-life of grinding pad；
Fig. 5 is grinding rate in embodiment with pressure trend line of the grinding head to abrasive disk.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, the embodiment in the present invention and the feature in embodiment can phases
Mutually combination.
As shown in figure 1, the method that the present invention keeps grinder station grinding rate balance, is mainly included the following steps that：There is provided one
Semiconductor devices to be ground；Semiconductor devices is positioned on grinder station, carrying out chemical machinery to the semiconductor devices grinds
Grinding process；Wherein, using the pressurization function of grinding head, by adjusting pressure of the grinding head for abrasive disk, to make up grinding pad
With loss of the grinding mat trimmer with grinding rate caused by lifetime change, so as to keep the balance of grinding rate.
As a preferred embodiment, grinder station of the invention includes abrasive disk, grinding pad, grinding head and grinding pad
Trimmer.Grinding pad is used for bearing semiconductor device, to carry out cmp to the surface of semiconductor devices；Abrasive disk is used
In fixed bearing grinding pad；Grinding head is used to semiconductor devices being pressed on grinding pad to be ground；Grinding mat trimmer is used
In finishing grinding pad.
Specifically, the public affairs that grinding head changes to the pressure change of abrasive disk with grinding pad and grinding mat trimmer lifetime
Formula is as follows：
Wherein：Pi be grinding head for abrasive disk real-time pressure (for example, for 8 cun of silicon chip grindings such as Mirra＆Mesa
Under board Pi is mainly Membrane pressure, and Intertuber and Retaining Ring rise with Membrane pressure
The percentage of drop is accordingly adjusted, and is mainly Zone5 pressure for 12 cun of silicon chip grinding board Pi such as Mirra LK, and Zone1
~4 and Retaining Ring pressure is accordingly adjusted with the percentage of Zone5 pressure rise and fall)；PBeginTo be existing with grinding
The pressure of formula is (similarly for the existing use pressure that 8 cun of silicon chip grinding boards such as Mirra＆Mesa are Membrane, for Mirra
12 cun of silicon chip grinding boards such as LK are Zone5 existing use pressure)；RBeginFor the initial grinding of new grinding pad and new grinding mat trimmer
Rate；REventuallyGrinding rate during the maximum use time of grinding processing procedure permission is reached for grinding pad and grinding mat trimmer；K be and grinding
The board constant relevant with chemical mechanical milling tech, it is relevant with grinding layer hardness, polishing fluid and polishing pad etc.；V is grinding pad
Relative to the relative velocity of abrasive disk；tiPadFor the real-time use time of grinding pad；tiDiskIt is real-time for grinding mat trimmer
Use time；TPadThe maximum use time allowed for grinding pad in grinding processing procedure；TDiskIt is that grinding mat trimmer is being ground
The maximum use time allowed in processing procedure；A is the scale parameter that grinding pad is contributed with grinding mat trimmer for grinding rate, this
Parameter is relevant with the Cut Rate of the soft or hard and grinding mat trimmer of grinding pad.
The use time change with grinding pad and grinding mat trimmer is illustrated with reference to a specific embodiment,
Increase pressure of the grinding head for abrasive disk according to above-mentioned formula, to maintain the balance of grinding rate.
When the method uses a kind of silicon oxide film of doping, now with the existing use of grinding formula film (Membrane)
Pressure is 1.6psi (i.e. PBeginFor 1.6psi), then as reference pressure, respectively with 1.3psi, 1.5psi, 1.7psi,
2.0psi carries out the different pressures of grinding collection that the time (60s) is fixed in the doping silicon oxide film for Membrane pressure
The grinding rate of power.Then thus show that grinding rate, to abrasive disk pressure trend, then carries out linear fit and obtained with grinding head
To Trendline and fitting formula (grinding rate as shown in Figure 5 is with pressure trend line of the grinding head to abrasive disk), intend in figure
It is linear fit knowable to 0.9991 that syzygy number R2, which is,.Also according to Preston empirical equation R=kPv,
RBegin-REventually=kPBeginV-kPEventuallyV=1845.1PBegin+509.92-1845.1PEventually-509.92 (1)
(PEventually-PBegin) kV=(PEventually-PBegin)1845.1 (2)
KV=1845.1 (3)
And TPadThe maximum use time allowed for grinding pad in grinding processing procedure is 45h, TDiskFor grinding mat trimmer
The maximum use time 35h that allows in grinding processing procedure, from Fig. 3 variation tendency line of abrasive disk life-span (grinding rate with) and Fig. 4
The variation tendency line of service-life of grinding pad (grinding rate with) understands new grinding pad (Pad) and new abrasive disk in a PM cycle
(Disk) grinding rate is 3350A/min or so, and the grinding rate when Pad and Disk reaches maximum use time is 3100A/
Min or so, and a is the scale parameter that grinding pad is contributed with grinding mat trimmer for grinding rate, can be according to Fig. 3 grinding rates
With Disk Lifetime variation tendency line slope ratio figure 4 above grinding rate with the oblique of Pad Lifetime variation tendency line
Rate tries to achieve about 1.42.Bring all parameters into formula
Pi=1.6+0.00143*tiPad+0.00203*tiDisk (6)
So during to such a thin-film grinding, the pressure of grinding head can keep ground according to formula (6) regulation
The balance of journey medium-rate.
Should be noted when, grinding head in itself have pressurization function, can be by one section of root of grinding head indoor design
The program pressurizeed according to above-mentioned formula, or grinding head is connected with a control panel, grinding is controlled by control panel
The pressing time of head and degree, namely pressurized operation of the accomplished in many ways grinding head according to above-mentioned formula, this hair can be passed through
It is bright that this is not restricted.
In summary, the method for a kind of holding grinder station grinding rate balance that the present invention is provided, by increasing grinding head
Grinding pad is made up for the pressure of abrasive disk with grinding mat trimmer with the loss of lifetime change grinding rate, is ground so as to reach
Grind the balance of speed.
It should be appreciated by those skilled in the art that those skilled in the art combine prior art and above-described embodiment can be with
Various change example is realized, such change case has no effect on the substantive content of the present invention, will not be described here.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, wherein the equipment and structure be not described in detail to the greatest extent are construed as giving reality with the common mode in this area
Apply；Any those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above
Methods and techniques content make many possible variations and modification to technical solution of the present invention, or be revised as equivalent variations etc.
Embodiment is imitated, this has no effect on the substantive content of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit of the present invention still falls within the present invention to any simple modifications, equivalents, and modifications made for any of the above embodiments
In the range of technical scheme protection.
Claims (7)
1. a kind of method for keeping grinder station grinding rate balance, it is characterised in that the grinder station includes abrasive disk, grinding
Pad, grinding head and grinding mat trimmer, methods described include：
One semiconductor devices to be ground is provided；
The semiconductor devices is positioned on the grinder station, to carry out cmp work to the semiconductor devices
Skill；Wherein
Using the pressurization function of the grinding head, by adjusting pressure of the grinding head for abrasive disk, to make up grinding pad with grinding
Dresser is ground with the loss of grinding rate caused by lifetime change, so as to keep the balance of grinding rate；
Wherein, pressure of the grinding head to abrasive disk is adjusted according to a formula, to keep the balance of grinding rate, the formula tool
Body is：
Pi is real-time pressure of the grinding head in process of lapping to abrasive disk；
PBeginInitial pressure of the grinding head to abrasive disk before starting for grinding；
RBeginFor the initial grinding rate of grinding pad and grinding mat trimmer；
REventuallyGrinding rate during the maximum use time of grinding processing procedure permission is reached for grinding pad and grinding mat trimmer；
K is a constant；
V is grinding rate of the grinding pad relative to abrasive disk；
tiPadFor the real-time use time of grinding pad；
tiDiskFor the real-time use time of grinding mat trimmer；
TPadThe maximum use time allowed for grinding pad in grinding processing procedure；
TDiskThe maximum use time allowed for grinding mat trimmer in grinding processing procedure；
A is the scale parameter that grinding pad is contributed with grinding mat trimmer for grinding rate.
2. according to the method described in claim 1, it is characterised in that constant k is lined with grinding layer hardness, polishing fluid and polishing
Close.
3. according to the method described in claim 1, it is characterised in that the soft or hard and grinding mat trimmer of parameter a and grinding pad
Grinding rate is relevant.
4. according to the method described in claim 1, it is characterised in that the grinding pad is used for bearing semiconductor device, with to institute
The surface for stating semiconductor devices carries out cmp.
5. according to the method described in claim 1, it is characterised in that the abrasive disk is used for grinding pad described in fixed bearing.
6. according to the method described in claim 1, it is characterised in that the grinding head is used to the semiconductor devices being pressed on
It is ground on the grinding pad.
7. according to the method described in claim 1, it is characterised in that the grinding mat trimmer is used to repair the grinding pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510703181.9A CN105397613B (en) | 2015-10-26 | 2015-10-26 | A kind of method for keeping grinder station grinding rate balance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510703181.9A CN105397613B (en) | 2015-10-26 | 2015-10-26 | A kind of method for keeping grinder station grinding rate balance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105397613A CN105397613A (en) | 2016-03-16 |
| CN105397613B true CN105397613B (en) | 2017-11-03 |
Family
ID=55463537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510703181.9A Active CN105397613B (en) | 2015-10-26 | 2015-10-26 | A kind of method for keeping grinder station grinding rate balance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105397613B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107900788B (en) * | 2017-11-24 | 2020-04-24 | 上海华力微电子有限公司 | Method for improving thickness stability of interlayer medium grinding process |
| CN113547446B (en) * | 2020-04-03 | 2024-01-26 | 中芯国际集成电路制造(上海)有限公司 | Polishing rate correction method |
| CN114734372A (en) * | 2022-03-28 | 2022-07-12 | 北京烁科精微电子装备有限公司 | Wafer grinding method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5536202A (en) * | 1994-07-27 | 1996-07-16 | Texas Instruments Incorporated | Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish |
| US6458013B1 (en) * | 2000-07-31 | 2002-10-01 | Asml Us, Inc. | Method of chemical mechanical polishing |
| CN100574996C (en) * | 2005-12-15 | 2009-12-30 | 上海华虹Nec电子有限公司 | A kind of method of automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher |
| CN101116955A (en) * | 2006-08-02 | 2008-02-06 | 力晶半导体股份有限公司 | operating parameter self-feedback method for chemical mechanical lapping device and system for controlling the same |
| CN102509712B (en) * | 2011-11-29 | 2013-09-18 | 中国科学院微电子研究所 | Method for determining chemical mechanical polishing grinding liquid pressure distribution and grinding removal rate |
| US9138861B2 (en) * | 2012-02-15 | 2015-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP pad cleaning apparatus |
| CN104742008B (en) * | 2013-12-27 | 2017-03-22 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method and chemical mechanical grinding device |
-
2015
- 2015-10-26 CN CN201510703181.9A patent/CN105397613B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105397613A (en) | 2016-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105397613B (en) | A kind of method for keeping grinder station grinding rate balance | |
| CN104440497B (en) | A kind of burnishing device and polishing method for mobile phone faceplate cambered surface | |
| CN105340066B (en) | The manufacture method of SiC substrate | |
| TWI523731B (en) | Chemical mechanical polishing system and method for chemical mechanical polishing | |
| CN106002633B (en) | A kind of compound dressing method of Vitrified Bond CBN Grinding Wheel | |
| CN209774374U (en) | polishing pad finisher system | |
| TW201334916A (en) | Chemical mechanical polishing system and method for chemical mechanical polishing system | |
| CN203245721U (en) | Grinding adjusting device and chemical-mechanical grinding device | |
| CN103909465A (en) | Method for grinding and polishing large-size sapphire substrate slice | |
| US20190105752A1 (en) | Surface treatment process of CMP Polishing pad | |
| CN106891241A (en) | The control method and control program of lapping device, the lapping device | |
| CN102091984B (en) | Edging method and device | |
| MY183298A (en) | Method for manufacturing magnetic-disk substrate and method for manufacturing magnetic disk | |
| CN102419603A (en) | Temperature control system of polishing pad in chemical mechanical polishing process | |
| CN204748298U (en) | Polishing system and polishing pad assembly | |
| CN103681298A (en) | Machining method for high-yield monocrystalline silicon wafer for IGBT | |
| CN103084969B (en) | A kind of chemical-mechanical grinding device | |
| CN207495278U (en) | A kind of grinding pad conditioning system | |
| CN107627226A (en) | A kind of elastic concretion abrasive and its preparation method and application | |
| CN102962760A (en) | Device for maintaining stable grinding rate and method thereof | |
| CN105397617B (en) | A kind of grinding pad and its replacing options | |
| CN102862121B (en) | Chemical mechanical polishing (CMP) grinding pad finishing structure | |
| CN105291287B (en) | Intermediate in sapphire wafer processing method and its processing technology | |
| Jeong et al. | A study on pressure distribution for uniform polishing of sapphire substrate | |
| CN209175539U (en) | A kind of adjustable polishing cloth conditioner discs in diamond grinding block position |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |