CN101456156A - Method for adjusting chemical mechanical planarization speed - Google Patents
Method for adjusting chemical mechanical planarization speed Download PDFInfo
- Publication number
- CN101456156A CN101456156A CNA2007100944450A CN200710094445A CN101456156A CN 101456156 A CN101456156 A CN 101456156A CN A2007100944450 A CNA2007100944450 A CN A2007100944450A CN 200710094445 A CN200710094445 A CN 200710094445A CN 101456156 A CN101456156 A CN 101456156A
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- lapping liquid
- liquid nozzle
- grinding
- grinding rate
- adjusting
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a method for adjusting the chemico-mechanical complanation speed rate, and comprises: automatically adjusting the position of a lapping liquid nozzle according to the requirements of a formulation; adjusting the position of the lapping liquid nozzle to move towards the center of a grinding disc when the grinding rate in the middle part of a silicon slice is required to be fast; and adjusting the position of the lapping liquid nozzle to move towards the periphery of the grinding disc when the grinding rate on the periphery of the silicon slice is required to be fast. The method changes the in-plane evenness of the grinding rate by changing the position of the lapping liquid nozzle. When the position of the lapping liquid nozzle is changed, the distribution of the lapping liquid on a grinding pad is changed therewith, and the in-plane distribution of the grinding rate is also changed correspondingly. Therefore, the ratio of the grinding rate of the middle to the periphery of the silicon slice can be adjusted to play a role of adjusting the inclination of the in-plane grinding rate.
Description
Technical field
The present invention relates to a kind of method of manufacturing technology that is used for semiconductor integrated circuit, particularly relate to a kind of method of regulating chemical mechanical planarization speed.
Background technology
In the manufacture craft process of chemical-mechanical planarization (Chemical-Mechanical Polish CMP), the uniformity of the oxide thickness of silicon chip surface is extremely important.The silicon chip surface oxide thickness will have influence on the unit for electrical property parameters of electronic device, and meeting in uneven thickness makes the device performance of producing on the same silicon chip produce difference, influences yield rate.
The oxide-film uniformity of silicon chip surface is subjected to three factor affecting after grinding: at first being the inhomogeneity influence of silicon chip surface oxide-film before grinding, secondly is that CMP grinds the influence that the women's head-ornaments internal pressure distributes, and the 3rd is subjected to the influence of the lapping liquid distribution on grinding pad surface.
Summary of the invention
The technical problem that this method will solve provides a kind of method of regulating chemical mechanical planarization speed, can effectively improve the inner evenness of grinding rate in the silicon chip.
For solving the problems of the technologies described above, the method for adjusting chemical mechanical planarization speed tendency of the present invention is to adjust the position of lapping liquid nozzle automatically according to the requirement of prescription; When the grinding rate in the middle of requiring silicon chip is fast, regulates the lapping liquid nozzle location and move, when the grinding rate that requires silicon chips periphery is fast, regulates the lapping liquid nozzle location and move to the abrasive disk periphery to the abrasive disk center.
Owing to adopt method of the present invention, change the inner evenness of grinding rate by the position that changes the lapping liquid nozzle, after the change in location of lapping liquid nozzle, the distribution of lapping liquid on grinding pad changes thereupon, and distribute in the face of grinding rate also changes thereupon.Like this, can regulate in the middle of the silicon chip and the grinding rate ratio of peripheral position, play the effect of grinding rate tendency in the adjusting range.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and the specific embodiment:
Fig. 1, the 2nd, the influence curve figure that behind the adjusting nozzle location grinding rate is changed;
Fig. 3 is a method schematic diagram of the present invention.
The specific embodiment
Referring to shown in Figure 3, the method for adjusting cmp speed of the present invention tendency is, according to the needs that grind, milling apparatus transformed, and makes the position of lapping liquid nozzle 9 can adjust the position of lapping liquid nozzle 9 according to the requirement of prescription automatically.When requiring the middle grinding rate of silicon chip fast, regulate the position of lapping liquid nozzle 9 and move to abrasive disk 7 centers; When the grinding rate that requires silicon chips periphery is fast, regulates the position of lapping liquid nozzle 9 and move to abrasive disk 7 peripheries.
Because the variation of lapping liquid nozzle location, cause the changes in distribution of lapping liquid on grinding pad, the amount that grinding head center and periphery touch lapping liquid also changes thereupon, thereby plays the effect of regulating grinding head 8 centers and peripheral grinding rate, changes to grind oxide thickness uniformity in the silicon chip face of back.
As shown in Figure 1, 2, because the variation grinding rate of lapping liquid nozzle location produces significant change, particularly silicon chip central area.Wherein, grinding rate distribution curve in silicon chip face when curve 1 is lapping liquid nozzle home position among Fig. 1, curve 2 and 3 distributes for regulating lapping liquid nozzle location grinding rate in back silicon chip face is moved in the centre.Grinding rate distribution curve in silicon chip face when curve 4 is lapping liquid nozzle home position among Fig. 2, curve 5 and 6 distributes for regulating lapping liquid nozzle location grinding rate in the edge moves back silicon chip face.
During concrete enforcement, set the position move signal of a lapping liquid nozzle, this command signal is by the Position Control of silicon chip grinding speed.Driving mechanism is moved in the position that also needs the lapping liquid nozzle in addition.When requiring the middle grinding rate of silicon chip fast, the move signal controlling position, position of lapping liquid nozzle is moved the position of drive mechanism lapping liquid nozzle and is moved to the abrasive disk center.When the grinding rate that requires silicon chips periphery was fast, the move signal controlling position, position of lapping liquid nozzle was moved the position of drive mechanism lapping liquid nozzle and is moved to the abrasive disk periphery.
Claims (1)
1, a kind of method of regulating chemical mechanical planarization speed is characterized in that, adjusts the position of lapping liquid nozzle automatically according to the requirement of prescription; When the grinding rate in the middle of requiring silicon chip is fast, regulates the lapping liquid nozzle location and move, when the grinding rate that requires silicon chips periphery is fast, regulates the lapping liquid nozzle location and move to the abrasive disk periphery to the abrasive disk center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100944450A CN101456156A (en) | 2007-12-13 | 2007-12-13 | Method for adjusting chemical mechanical planarization speed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100944450A CN101456156A (en) | 2007-12-13 | 2007-12-13 | Method for adjusting chemical mechanical planarization speed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101456156A true CN101456156A (en) | 2009-06-17 |
Family
ID=40767427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100944450A Pending CN101456156A (en) | 2007-12-13 | 2007-12-13 | Method for adjusting chemical mechanical planarization speed |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101456156A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108406575A (en) * | 2018-02-05 | 2018-08-17 | 上海华虹宏力半导体制造有限公司 | CMP grinding method |
| CN114952452A (en) * | 2022-04-19 | 2022-08-30 | 赛莱克斯微系统科技（北京）有限公司 | Polishing pad dresser, chemical mechanical polishing apparatus and method |
-
2007
- 2007-12-13 CN CNA2007100944450A patent/CN101456156A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108406575A (en) * | 2018-02-05 | 2018-08-17 | 上海华虹宏力半导体制造有限公司 | CMP grinding method |
| CN114952452A (en) * | 2022-04-19 | 2022-08-30 | 赛莱克斯微系统科技（北京）有限公司 | Polishing pad dresser, chemical mechanical polishing apparatus and method |
| CN114952452B (en) * | 2022-04-19 | 2023-09-26 | 赛莱克斯微系统科技（北京）有限公司 | Polishing pad conditioner, chemical mechanical polishing device and method |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090617 |