CN105375914B - 一种实现忆感器特性的模拟电路 - Google Patents
一种实现忆感器特性的模拟电路 Download PDFInfo
- Publication number
- CN105375914B CN105375914B CN201510908273.0A CN201510908273A CN105375914B CN 105375914 B CN105375914 B CN 105375914B CN 201510908273 A CN201510908273 A CN 201510908273A CN 105375914 B CN105375914 B CN 105375914B
- Authority
- CN
- China
- Prior art keywords
- pin
- resistance
- sensor
- operational amplifier
- multiplier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004907 flux Effects 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 5
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000013178 mathematical model Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- SUBDBMMJDZJVOS-DEOSSOPVSA-N esomeprazole Chemical compound C([S@](=O)C1=NC2=CC=C(C=C2N1)OC)C1=NC=C(C)C(OC)=C1C SUBDBMMJDZJVOS-DEOSSOPVSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510908273.0A CN105375914B (zh) | 2015-12-10 | 2015-12-10 | 一种实现忆感器特性的模拟电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510908273.0A CN105375914B (zh) | 2015-12-10 | 2015-12-10 | 一种实现忆感器特性的模拟电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105375914A CN105375914A (zh) | 2016-03-02 |
CN105375914B true CN105375914B (zh) | 2019-06-25 |
Family
ID=55377769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510908273.0A Active CN105375914B (zh) | 2015-12-10 | 2015-12-10 | 一种实现忆感器特性的模拟电路 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105375914B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107526896A (zh) * | 2017-09-08 | 2017-12-29 | 杭州电子科技大学 | 一种磁控忆感器模型的等效模拟电路 |
CN107526897A (zh) * | 2017-09-08 | 2017-12-29 | 杭州电子科技大学 | 一种流控忆感器的等效模拟电路 |
CN108416102B (zh) * | 2018-02-05 | 2021-08-31 | 杭州电子科技大学 | 一种忆感器的等效模拟电路 |
CN108509704B (zh) * | 2018-03-22 | 2019-08-20 | 武汉科技大学 | 一种分数阶忆感器的等效电路 |
CN109885858B (zh) * | 2018-12-28 | 2023-05-12 | 山东科技大学 | 一种二次曲线忆感器等效模拟电路 |
CN109871583B (zh) * | 2019-01-16 | 2023-04-18 | 山东科技大学 | 一种磁控平方关系忆感器仿真器 |
CN116707514B (zh) * | 2023-08-09 | 2023-11-03 | 苏州浪潮智能科技有限公司 | 一种多输出忆阻器等效电路、应用系统及控制方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359653A (en) * | 1979-06-28 | 1982-11-16 | Nippon Electric Co., Ltd. | Integrated circuit having a plurality of current mode logic gates |
CN203608166U (zh) * | 2013-10-22 | 2014-05-21 | 天津大学 | 宽输入范围电容-比较器型时间放大器 |
CN205232190U (zh) * | 2015-12-10 | 2016-05-11 | 杭州电子科技大学 | 实现忆感器特性的模拟电路 |
-
2015
- 2015-12-10 CN CN201510908273.0A patent/CN105375914B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359653A (en) * | 1979-06-28 | 1982-11-16 | Nippon Electric Co., Ltd. | Integrated circuit having a plurality of current mode logic gates |
CN203608166U (zh) * | 2013-10-22 | 2014-05-21 | 天津大学 | 宽输入范围电容-比较器型时间放大器 |
CN205232190U (zh) * | 2015-12-10 | 2016-05-11 | 杭州电子科技大学 | 实现忆感器特性的模拟电路 |
Also Published As
Publication number | Publication date |
---|---|
CN105375914A (zh) | 2016-03-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105375914B (zh) | 一种实现忆感器特性的模拟电路 | |
CN103219983B (zh) | 一种忆阻器等效模拟电路 | |
CN107451380B (zh) | 实现指数型荷控忆容器仿真器的电路 | |
CN107169253A (zh) | 对数型忆容器等效模拟电路 | |
CN105553459B (zh) | 浮地压控忆阻器仿真器电路 | |
CN105447270B (zh) | 指数型忆感器电路 | |
CN108846165A (zh) | 一种四阶局部有源忆阻器电路模型 | |
CN206991310U (zh) | 一种对数型忆容器等效模拟电路 | |
CN103559328B (zh) | 一种忆容器的实现电路及其实现方法 | |
CN107526896A (zh) | 一种磁控忆感器模型的等效模拟电路 | |
CN205265656U (zh) | 一种浮地压控忆阻器仿真器电路 | |
CN205232190U (zh) | 实现忆感器特性的模拟电路 | |
CN108696274A (zh) | 一种指数型流控忆阻器的电路模型 | |
CN105373679B (zh) | 一种实现忆容器电容特性的模拟电路 | |
CN101295454B (zh) | 一种无电感蔡氏电路 | |
CN205263816U (zh) | 一种指数型忆感器电路 | |
CN105389443B (zh) | 一种忆感器对数模型等效电路 | |
CN111079365A (zh) | 一种反正切三角函数忆阻器电路模型 | |
CN105373678B (zh) | 一种忆容器仿真器电路 | |
CN204331729U (zh) | 忆容器的实现电路 | |
CN108718190A (zh) | 一种指数型局部有源忆阻器仿真器 | |
CN203193601U (zh) | 实现忆阻器特性的模拟电路 | |
CN207148838U (zh) | 一种实现指数型荷控忆容器仿真器的电路 | |
CN205247388U (zh) | 忆容器仿真器的电路 | |
CN205247389U (zh) | 实现忆容器电容特性的模拟电路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201207 Address after: Room 806, building 5, Wuhu navigation Innovation Park, Wanbi Town, Wanbi District, Wuhu City, Anhui Province Patentee after: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Address before: 310016 room 3003-1, building 1, Gaode land center, Jianggan District, Hangzhou City, Zhejiang Province Patentee before: Zhejiang Zhiduo Network Technology Co.,Ltd. Effective date of registration: 20201207 Address after: 310016 room 3003-1, building 1, Gaode land center, Jianggan District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Zhiduo Network Technology Co.,Ltd. Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park No. 2 street Patentee before: HANGZHOU DIANZI University |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160302 Assignee: Hangzhou Qihu Information Technology Co.,Ltd. Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000547 Denomination of invention: An analog circuit for realizing the characteristics of memory Granted publication date: 20190625 License type: Common License Record date: 20211028 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160302 Assignee: Hangzhou Julu enterprise management consulting partnership (L.P.) Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000726 Denomination of invention: An analog circuit for realizing the characteristics of memory Granted publication date: 20190625 License type: Common License Record date: 20211109 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Hangzhou Qihu Information Technology Co.,Ltd. Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000547 Date of cancellation: 20221103 Assignee: Hangzhou Julu enterprise management consulting partnership (L.P.) Assignor: Wuhu Qibo Intellectual Property Operation Co.,Ltd. Contract record no.: X2021330000726 Date of cancellation: 20221103 |
|
EC01 | Cancellation of recordation of patent licensing contract |