CN105374467A - Nanometer transfer method and nanometer functional device - Google Patents
Nanometer transfer method and nanometer functional device Download PDFInfo
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- CN105374467A CN105374467A CN201510696751.6A CN201510696751A CN105374467A CN 105374467 A CN105374467 A CN 105374467A CN 201510696751 A CN201510696751 A CN 201510696751A CN 105374467 A CN105374467 A CN 105374467A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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Abstract
The invention discloses a nanometer transfer method and a nanometer functional device. The nanometer transfer method comprises the following steps of: S1, coating a flexible metallic substrate with photoresist; S2, photoetching the flexible metallic substrate coated with the photoresist in order to form a trench pattern; S3, performing first-time electroforming in order to form a pattern electrode; S4, performing second-time electroforming in order to form a transfer layer; and S5, by means of a roll-to-flat transfer mode, controlling the flexible metallic substrate to perform transferring on a corresponding substrate so as to form a nanostructure material layer. The method may achieve transfer of nanometer electrodes or nanostructure functional regions with different materials on the same substrate, or transfer of multilayer composite structure nanometer electrodes or functional regions on the same area of the same substrate. The pattern electrode on the metallic substrate is used as a transfer mold. By means of electro-deposition technology, a nanoscale material layer is formed on the electrode of the transfer mold and the nanoscale material layer on the transfer mold is transferred to a corresponding flexible substrate surface.
Description
Technical field
The present invention relates to field of nanometer technology, relate to a kind of nanometer transfer printing method and nano functional device particularly.
Background technology
Flexible electronic (FlexibleElectronics), being also called printed electronic (PrintedElectronics) or organic electronic (OrganicElectronics), is new electronic technology organic/inorganic electronic device deposition being formed on flexible substrates circuit.Active demand is had in fields such as flexible electronic display, OLED/QLED, thin-film solar cell panel and the energy with the flexibility of its uniqueness and manufacturing process that is efficient, low cost.
In field of flexible display, need the electrode of fine linewidth and the functional area of different qualities.Existing based on silica-based photoetching process, the requirement of flexible electronic device large area, flexibility and low cost can not be met.Particularly adopt printing technology to prepare organic display device, be the hope of domestic and international industry and following developing direction always.Organic polymer or Nano Silver are made ink, adopt inkjet technology can carry out the preparation of precision circuit and functional areas, but print live width and only reach 20um (semiconductor process technology in 1975), and printing effect and ink characteristics are the major obstacles restricting mass and low cost.Gravure and offset printing (gravureprinting and offsetprinting) characteristic line breadth are also more than some tens of pm, due to factors such as printing ink viscosity and ink dot diffusions, gravure and offset printing also do not reach the requirement of display device to electrode live width and functional areas thickness control accuracy.
In capacitive touch screen industry, need the nesa coating of low square resistance (<10 Europe/side) superfine live width (<5 micron), to meet metal grill conducting film and large touch display device prepares demand.Equally, the live width of Flexible Displays circuit and conduction needs higher.The sheet resistance about 150 Europe/side of existing tin indium oxide ITO nesa coating, and fragility, be not suitable for Flexible Displays and touch-control requirement.And prepare metal grill nesa coating with traditional copper etch process, there is a large amount of etchings pollutes, and the circuit line width of large area conducting film is generally more than 5 microns simultaneously, and the consistency of live width is wayward.
In field of lithium, need the nano-electrode of better energy storage characteristic, especially need the carbon nano-tube (CNT) of multi-layer nano structure and the combination electrode of active material.Existing aluminium base coating, be difficult to realize nano level multi-layer composite electrode, and cost is high, and stability controls to be difficult to control.
Therefore, need and a kind ofly can realize the Method of Green Manufacture that thickness accurately controls efficient, the low cost reaching tens nanometer to nano-precision, electrode live width, to meet industrial quarters to the preparation requirement at nano level functional area of the electrode of nanoscale live width and thickness.
Summary of the invention
Given this, the invention provides a kind of nanometer transfer printing method and nano functional device, to overcome the deficiencies in the prior art.
To achieve these goals, the invention provides a kind of nanometer transfer printing method, it comprises the steps:
S1. on flexible metal base plate, photoresist is coated with;
S2. photoetching is carried out to the flexible metal base plate of described coating photoresist, form groove figure on flexible metal base plate surface, develop and expose the flexible metal base plate bottom photoresist;
S3. the flexible metal base plate through step S2 process is put into the first electrotyping bath, carry out first time electroforming process, grow the metal electrode layer stretched out in the trench, Passivation Treatment is carried out to described metal electrode layer surface;
S4. the flexible metal base plate through step S3 process is put into the second electrotyping bath, carry out second time electroforming process, metal electrode layer is formed nanometer materials layer;
S5. the flexible metal base plate through step S4 process is coated on roller, the bottom surface of flexible metal base plate and described roller are fitted, by volume to flat turn watermark patterns, control described flexible metal base plate, transfer printing layer of nanomaterial on corresponding undertaking substrate.
As the improvement of nanometer transfer printing method of the present invention, in described step S1, described photoresist is positive photoresist, and described flexible metal base plate is stainless steel or nickel, or described flexible metal base plate is the metallic conduction substrate formed after a kind of surface metalation in PET, PI, PEN.
As the improvement of nanometer transfer printing method of the present invention, described step S3 also comprises: on the anode of described first electrotyping bath, place required metal material, after energising, cathodic metal ion in the trench deposition growing goes out the metal electrode layer of 100nm-10um.
As the improvement of nanometer transfer printing method of the present invention, described step S4 also comprises: on the anode of described second electrotyping bath, place required electroforming material, after energising, control distance, the current density of the draw speed of flexible metal base plate, anode and negative electrode, described metal electrode layer is formed the nanometer materials layer for transfer printing that thickness is tens nanometer ~ several microns.
As the improvement of nanometer transfer printing method of the present invention, according to the characteristic size of the electrode pattern of metal substrate, the distance range of described anode and negative electrode is 2mm ~ 200mm.
As the improvement of nanometer transfer printing method of the present invention, described electroforming material is selected from one or several the mixing in metal, semiconductor, carbon nano-tube, Graphene.
As the improvement of nanometer transfer printing method of the present invention, described nanometer transfer printing method also comprises: S6. changes the electroforming material in the second electrotyping bath, repeats step S4 and S5, obtains the electrode device of multilayer materials.
To achieve these goals, the present invention also provides a kind of basis nano functional device that nanometer transfer printing method as above obtains, and it comprises substrate and is arranged at the layer of nanomaterial of transfer printing on described substrate.
As the improvement of nano functional device of the present invention, described layer of nanomaterial is positioned at the same area on described substrate or zones of different, described layer of nanomaterial is one or more layers, and when described layer of nanomaterial is multilayer, multi-layer nano material layer is arranged on described substrate.
As the improvement of nano functional device of the present invention, described nano functional device can be: the transparency conductive electrode of nesa coating, lithium battery combination electrode, flexible display electrodes, OLED.
Compared with prior art, the invention has the beneficial effects as follows:
(1) the present invention is by flexible metal electrode die, is convenient to the nanometer materials layer on metal electrode layer surface to be transferred to large-area substrates on the surface.Because metal electrode layer projection is arranged, the real contact area of its top nanometer materials layer and substrate surface is very little, when transfer printing, the actual force of impression of its per surface, higher than the plane electrode mould of working it out with photoetching-etch process, is conducive to the complete transfer printing of the nanometer materials layer at top.
(2) the present invention is by volume to flat turn watermark patterns, and flexible metal base plate is coated on roller, during transfer printing, forms cornerite, have significant increase to the demoulding, flexible metal base plate life-span and transfer printing area between flexible metal base plate and the substrate that is transferred.Putting down flat nanometer transfer printing of seal style, area is generally less than 1 inch, and the present invention can realize meter level breadth.Because volume pressing belongs to linear contact lay, integral pressure reduces, the mould that flexible metal base plate is formed reuse life, usually, nickel template die can realize thousands of time transfer printing to tens thousand of times.
(2) the present invention is by carrying out Passivation Treatment to metal electrode layer surface, is conducive to being separated of nanometer materials layer and metal electrode layer, promotes the rate of finished products of nanometer transfer printing, the transfer fidelity of nanometer materials layer is improved.
Accompanying drawing explanation
Fig. 1 is coated with photoresist and structural representation after carrying out photoetching on flexible metal base plate;
Fig. 2 is metal electrode layer and flexible metal base plate die cut view when forming transfer printing;
Fig. 3 is the schematic diagram of flexible metal base plate in the first electrotyping bath during electroforming after photoetching;
Fig. 4 is the schematic diagram of mould in the second electrotyping bath during electroforming;
Fig. 5 is the die cut view with layer of nanomaterial;
Fig. 6 is the schematic diagram of step S5 in nanometer transfer printing method of the present invention, and now, layer of nanomaterial is positioned at the same area on described substrate;
Fig. 7 is the schematic diagram of step S6 in nanometer transfer printing method of the present invention, and now, layer of nanomaterial is positioned at the zones of different on described substrate;
Fig. 8 is the schematic diagram of step S6 in nanometer transfer printing method of the present invention, and now, layer of nanomaterial is positioned at the same area on described substrate and carries out complex superposition.
The Reference numeral related in accompanying drawing and part illustrate: 1. flexible metal base plate; 2. photoresist; 3. groove figure; 4. metal electrode layer; 5. the first electrotyping bath; 6. the second electrotyping bath; 7. layer of nanomaterial; 8. roller; 9. substrate; 10. active material layer.
Embodiment
Be described in detail to the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
The present invention proposes a kind of based on the nanometer transfer printing method of volume to flat turn watermark patterns, can in the nano-electrode of transfer printing unlike material on the same substrate or functional areas, or at the nano-electrode of same substrate same area transfer printing multi-layer compound structure.It utilizes the electrode of metallic substrates as transfer mold, by electrodeposition technology, the electrode of roller mould forms the transfer-printing material coat of nano thickness and nanometer resolution, and nanometer materials layer on mould is transferred to respective flexible substrate surface.Thus realize the transfer printing of the functional areas of nano structure electrode or nano thickness.Above-mentioned processing step can repeatedly, to realize the transfer printing of the functional layer of different graphic structure and material characteristic.
As shown in figures 1 to 6, nanometer transfer printing method of the present invention comprises the steps:
S1. on flexible metal base plate 1, photoresist 2 is coated with.
Wherein, described photoresist is positive photoresist, and described flexible metal base plate can be, but not limited to stainless steel (invar) or nickel thin plate.Described flexible metal base plate can also be the conductive layer etc. of the films such as PET, PI and PEN after metalized.
S2. photoetching is carried out to the flexible metal base plate 1 of described coating photoresist, form groove figure 3 on flexible metal base plate surface, develop and expose the flexible metal base plate 1 bottom photoresist.
Wherein, the size of groove and the figure of arrangement can set according to the needs of device function.
S3. the flexible metal base plate through step S2 process is put into the first electrotyping bath 5, carry out first time electroforming process, grow the metal electrode layer 4 stretched out in the trench, Passivation Treatment is carried out to described metal electrode layer 4 surface.
Coordinate with reference to shown in Fig. 2, in step S3, the anode of described first electrotyping bath 5 is placed required metal material, after energising, metal ion deposition growing in the described groove of negative electrode goes out the metal electrode layer of 100 nanometer-10 microns, and this numerical value depends on the linewidth requirements to electrode pattern.The height of this metal electrode layer is a little more than the degree of depth of groove on flexible metal base plate, thus this metal electrode layer and flexible metal base plate form " convex " shape structure, and metal electrode layer and flexible metal base plate form mould during transfer printing.
In addition, before deposition growing nanometer materials layer, Passivation Treatment is carried out to described metal electrode layer surface, be conducive to reducing electrode active surface, when after nanometer materials layer to Mold Metal electrode layer surface, its adhesive force diminishes, and is conducive to the complete transfer of follow-up nanometer materials layer to the flexible base, board surface be transferred.
S4. the flexible metal base plate through step S3 process is put into the second electrotyping bath 6, carry out second time electroforming process, metal electrode layer is formed nanometer materials layer 7.
In described step S4, required electroforming material is placed on the anode of described second electrotyping bath 6 or in electrotyping bath, after energising, control distance, the current density of the draw speed of flexible metal base plate, anode and negative electrode, described metal electrode layer is formed the nanometer materials layer that thickness is tens nanometer ~ several microns.Due to other regions of flexible metal base plate cover by photoresist, do not have electroforming material deposition, the growth of nanometer materials layer-selective is at the end face of metal electrode layer.
Further, described electroforming material can be selected from one or several the mixing in metal, semiconductor, carbon nano-tube, Graphene.Described metal can be gold, silver, copper, nickel etc.Described semi-conducting material can be luminous organic material etc.The distance range of described anode and negative electrode is 2mm ~ 200mm, and concrete distance adjusts according to the area of mould and material behavior.
S5. the flexible metal base plate through step S4 process is coated on roller 8, the bottom surface of flexible metal base plate and described roller are fitted, by volume to flat turn watermark patterns, control described flexible metal base plate, transfer printing layer of nanomaterial on corresponding substrate 9.
Wherein, the substrate be transferred, when transfer printing, first suitably can heat according to baseplate material characteristic, under making it be in suitable temperature, is convenient to the transfer completely of layer of nanomaterial.
Coordinate with reference to shown in Fig. 7, Fig. 8, in addition, in order to the nanometer materials layer at the substrate transfer printing multilayer different qualities be transferred, nanometer transfer printing method of the present invention also comprises:
S6. change the electroforming material in the second electrotyping bath, repeat step S4 and S5, obtain multi-layer composite electrode device.
By step S6, repeatedly can carry out nanometer transfer printing in the zones of different of the same substrate be transferred, or in the same area transfer printing different qualities nanometer material of the substrate be transferred, form multi-layer composite electrode device.In addition, by controlling the electroforming material in the second electrotyping bath, can use mosaicism pattern electrodes group, preparation has electrode and the functional areas of mosaic texture, and wherein, active material layer 10 is between nanometer materials layer 7.
Based on above-mentioned nanometer transfer printing method, the present invention also provides a kind of nano functional device, and it comprises substrate and is arranged at the layer of nanomaterial on described substrate.Wherein, described layer of nanomaterial can be distributed in the same area or the zones of different of substrate, and the layer of nanomaterial in each region can be one or more layers, and when layer of nanomaterial is multilayer, multi-layer nano material layer is arranged on described substrate.Multi-layer nano material layer can be identical or different.
Further, described nano functional device can be: the transparency conductive electrode of nesa coating, lithium battery combination electrode, flexible display electrodes, OLED.
Below for different nano functional devices, in conjunction with specific embodiments nanometer transfer printing method of the present invention is illustrated.
The preparation of embodiment 1. nesa coating
Smooth metal substrate is coated with photoresist, prepares live width 1 micron-5 microns by photoetching process, the degree of depth is the grid type groove of 1.5 microns-10 microns, develop and expose metal substrate.
Metal substrate is placed in the first electrotyping bath, places metallic nickel, after energising, grow metallic pattern electrode at the current-carrying part of channel bottom at anode, its height is slightly larger than gash depth.The ratio of electrodeless part reaches more than 97%.
After Passivation Treatment, in the second electrotyping bath, said metal substrates is positioned over negative electrode, anode is placed nickel or copper alloy or both and is mixed.After energising, lift metal substrate, goes out the nanometer material layers of tens nanometer thickness at the deposited atop of pattern electrodes.
By volume to flat transfer mode, transfer printing on another flexible plastic substrate, forms the nano graph of nanometer material layers.
In the present embodiment, nanometer material layers characteristic line breadth 1-5 micron, conductive layer thickness is about 20nm-100nm.Appositional pattern metal grill, its sheet resistivity <1 Europe/side.Meanwhile, during transfer printing, substrate forms Nanoalloy layer cage circuit, control mixing ratio and the deposit thickness of nickel and copper, make the reflectance reduction of metal grill.So can prepare the transparency conductive electrode of low reflection, low square resistance.As substrate adopts optics PET film, then form high transparency conductive film.
The preparation of embodiment 2. lithium battery combination electrode
At metal substrate coating photoresist, prepare live width 100nm-3um by ultraviolet photolithographic technique or e-beam lithography, the degree of depth is the groove of 200nm-1um, develop and expose metal substrate.
Metal substrate is placed in the first electrotyping bath, after energising, grows metallic pattern electrode at the metal conduction portions of channel bottom, its height is slightly larger than gash depth.Wherein, electrode and non-electrode ratio 5%-95%.
After Passivation Treatment, in the second electrotyping bath, said metal substrates is positioned over negative electrode.After energising, lift metal substrate, goes out CNT or the Graphene of tens nanometer thickness at the deposited atop of pattern electrodes.
By volume to flat transfer mode, transfer printing on another flexible plastic substrate, forms nanometer CNT or graphene layer.Then, then to metal electrode Passivation Treatment, in the second electrotyping bath, metal substrate is positioned over negative electrode, anode places active material and alloy.After energising, lift mould, goes out tens nanometer thickness active layer at the deposited atop of electrode.
The above-mentioned metal substrate with active material layer is formed active layer on the surface at CNT or graphene layer.Repeat above-mentioned steps, prepare MULTILAYER COMPOSITE nano-electrode, nanometer layer thickness all can precise hard_drawn tuhes.This electrode can be used as the lithium battery combination electrode of quick charge.
The preparation of embodiment 3. flexible display electrodes
At metal substrate coating photoresist, prepare design circuit 2-5um by photoetching process, the gash depth after photoetching is the groove of 5um, and interior external circuit is prepared simultaneously, develops and exposes metal substrate.
Metal substrate is placed in the first electrotyping bath, places metallic nickel at anode, after energising, at the charged pattern electrodes growing metallic nickel of the current-carrying part of channel bottom, its height is slightly larger than gash depth.
After Passivation Treatment, in the second electrotyping bath, said metal substrates is positioned over negative electrode, anode places copper.Energising lift mould, goes out the Nanometer Copper telegraph circuit of tens nanometer thickness at the deposited atop of pattern electrodes.
By volume to flat transfer mode, transfer printing on another flexible plastic substrate, form Nanometer Copper circuit, its characteristic line breadth 2-5um, conductive layer thickness is about 50nm-100nm, the sheet resistivity <0.1 Europe/side of deposition type electrode.If plastic substrate is PI or pen film, be then prepared into the circuit electrode of high-performance, narrow linewidth.In addition, by depositing organic luminescent material, by above-mentioned transfer step, organic nanometer layer can be formed on the same area electrode, forming Presentation Function district.Thus, the preparation of flexible display device can be realized by nanometer transfer printing.
The preparation of the transparency conductive electrode of embodiment 4.OLED
Smooth metal substrate is coated with photoresist, prepares live width 500 nanometer-2 microns by photoetching process, the degree of depth is the grid type groove of 1 micron-5 microns, develop and expose metal substrate.
Subsequent step ginseng embodiment 1, by volume to flat transfer mode, transfer printing on another flexible plastic substrate, forms the nano graph of nanometer material layers.
In the present embodiment, nanometer material layers characteristic dimension is 1-2um, and conductive layer thickness is about 20nm-30nm, and owing to belonging to appositional pattern grid, its sheet resistivity <1 Europe/side, light transmittance reaches more than 95%.
Further, according to the purposes of OLED/QLED device, adopt electro-plating method, transfer printing hole transmission layer, the characteristic size 1-5um of transport layer, thickness is about a hundred or so nanometer.Repeat above step, go out luminescent layer (thickness 40-50nm), electron transfer layer (20-30nm) etc. at the same area successively transfer printing.Finally form the nanometer display of functional form, luminous and photovoltaic device.
In sum, the invention has the beneficial effects as follows:
(1) the present invention is by flexible metal electrode die, is convenient to the nanometer materials layer on metal electrode layer surface to be transferred to large-area substrates on the surface.Because metal electrode layer projection is arranged, the real contact area of its top nanometer materials layer and substrate surface is very little, when transfer printing, the actual force of impression of its per surface, higher than the plane electrode mould of working it out with photoetching-etch process, is conducive to the complete transfer of the nanometer materials layer at top.
(2) the present invention is by volume to flat turn watermark patterns, and flexible metal base plate is coated on roller, during transfer printing, forms cornerite, have significant increase to the demoulding, flexible metal base plate life-span and transfer printing area between flexible metal base plate and the substrate that is transferred.Putting down flat nanometer transfer printing of seal style, area is generally less than 1 inch, and the present invention can realize meter level breadth.Because volume pressing belongs to linear contact lay, integral pressure reduces, the mould that flexible metal base plate is formed reuse life, usually, nickel template die can realize thousands of time transfer printing to tens thousand of times.
(3) the present invention is by carrying out Passivation Treatment to metal electrode layer surface, is conducive to being separated of nanometer materials layer and metal electrode layer, promotes the rate of finished products of nanometer transfer printing, the transfer fidelity of nanometer materials layer is improved.To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (10)
1. a nanometer transfer printing method, is characterized in that, described nanometer transfer printing method comprises the steps:
S1. on flexible metal base plate, photoresist is coated with;
S2. photoetching is carried out to the flexible metal base plate of described coating photoresist, form groove figure on flexible metal base plate surface, develop and expose the flexible metal base plate bottom photoresist;
S3. the flexible metal base plate through step S2 process is put into the first electrotyping bath, carry out first time electroforming process, grow the metal electrode layer stretched out in the trench, Passivation Treatment is carried out to described metal electrode layer surface;
S4. the flexible metal base plate through step S3 process is put into the second electrotyping bath, carry out second time electroforming process, metal electrode layer is formed nanometer materials layer;
S5. the flexible metal base plate through step S4 process is coated on roller, the bottom surface of flexible metal base plate and described roller are fitted, by volume to flat turn watermark patterns, control described flexible metal base plate, transfer printing layer of nanomaterial on corresponding undertaking substrate.
2. nanometer transfer printing method according to claim 1, it is characterized in that, in described step S1, described photoresist is positive photoresist, described flexible metal base plate is stainless steel or nickel, or described flexible metal base plate is the metallic conduction substrate formed after a kind of surface metalation in PET, PI, PEN.
3. nanometer transfer printing method according to claim 1, it is characterized in that, described step S3 also comprises: on the anode of described first electrotyping bath, place required metal material, after energising, cathodic metal ion in the trench deposition growing goes out the metal electrode layer of 100nm-10um.
4. nanometer transfer printing method according to claim 1, it is characterized in that, described step S4 also comprises: on the anode of described second electrotyping bath, place required electroforming material, after energising, control distance, the current density of the draw speed of flexible metal base plate, anode and negative electrode, described metal electrode layer is formed the nanometer materials layer for transfer printing that thickness is tens nanometer ~ several microns.
5. nanometer transfer printing method according to claim 4, is characterized in that, according to the characteristic size of the electrode pattern of metal substrate, the distance range of described anode and negative electrode is 2mm ~ 200mm.
6. nanometer transfer printing method according to claim 4, is characterized in that, described electroforming material is selected from one or several the mixing in metal, semiconductor, carbon nano-tube, Graphene.
7. nanometer transfer printing method according to claim 1, is characterized in that, described nanometer transfer printing method also comprises: S6. changes the electroforming material in the second electrotyping bath, repeats step S4 and S5, obtains the electrode device of multilayer materials.
8. the nano functional device that nanometer transfer printing method obtains according to any one of claim 1-7, is characterized in that, described nano functional device comprises substrate and is arranged at the layer of nanomaterial of transfer printing on described substrate.
9. nano functional device according to claim 8, it is characterized in that, described layer of nanomaterial is positioned at the same area on described substrate or zones of different, described layer of nanomaterial is one or more layers, when described layer of nanomaterial is multilayer, multi-layer nano material layer is arranged on described substrate.
10. nano functional device according to claim 8, is characterized in that, described nano functional device can be: the transparency conductive electrode of nesa coating, lithium battery combination electrode, flexible display electrodes, OLED.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106448825A (en) * | 2016-10-21 | 2017-02-22 | 苏州苏大维格光电科技股份有限公司 | Graphical fine electroconductive film and production method thereof |
| CN106648257A (en) * | 2017-01-03 | 2017-05-10 | 京东方科技集团股份有限公司 | Fabrication method for touch display substrate, and touch display substrate |
| CN106816085A (en) * | 2017-03-27 | 2017-06-09 | 上海师范大学 | A kind of colored anti-counterfeiting mark preparation method based on butterfly wing scale micro-nano structure |
| CN112026073A (en) * | 2020-08-24 | 2020-12-04 | 青岛理工大学 | Preparation method of AR diffraction light waveguide imprinting mold, soft mold and application |
| CN112967992A (en) * | 2020-12-07 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Method for transferring epitaxial structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN102222538A (en) * | 2011-03-11 | 2011-10-19 | 苏州纳格光电科技有限公司 | Graphical flexible transparent conductive film and preparation method thereof |
| CN104700928A (en) * | 2014-12-24 | 2015-06-10 | 上海蓝沛新材料科技股份有限公司 | Low-square-resistance transparent conductive film and preparation method for same |
| CN104795130A (en) * | 2014-01-20 | 2015-07-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conductive film and preparation method thereof |
-
2015
- 2015-10-23 CN CN201510696751.6A patent/CN105374467B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN102222538A (en) * | 2011-03-11 | 2011-10-19 | 苏州纳格光电科技有限公司 | Graphical flexible transparent conductive film and preparation method thereof |
| CN104795130A (en) * | 2014-01-20 | 2015-07-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conductive film and preparation method thereof |
| CN104700928A (en) * | 2014-12-24 | 2015-06-10 | 上海蓝沛新材料科技股份有限公司 | Low-square-resistance transparent conductive film and preparation method for same |
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|---|---|---|---|---|
| CN106448825A (en) * | 2016-10-21 | 2017-02-22 | 苏州苏大维格光电科技股份有限公司 | Graphical fine electroconductive film and production method thereof |
| CN106648257A (en) * | 2017-01-03 | 2017-05-10 | 京东方科技集团股份有限公司 | Fabrication method for touch display substrate, and touch display substrate |
| US11730039B2 (en) | 2017-01-03 | 2023-08-15 | Boe Technology Group Co., Ltd. | Method for fabricating touch display substrate |
| CN106816085A (en) * | 2017-03-27 | 2017-06-09 | 上海师范大学 | A kind of colored anti-counterfeiting mark preparation method based on butterfly wing scale micro-nano structure |
| CN112026073A (en) * | 2020-08-24 | 2020-12-04 | 青岛理工大学 | Preparation method of AR diffraction light waveguide imprinting mold, soft mold and application |
| CN112026073B (en) * | 2020-08-24 | 2022-04-08 | 青岛理工大学 | Preparation method of AR diffraction light waveguide imprinting mold, soft mold and application |
| CN112967992A (en) * | 2020-12-07 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Method for transferring epitaxial structure |
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