CN110265178A - A kind of preparation method of flexible transparent conducting film - Google Patents

A kind of preparation method of flexible transparent conducting film Download PDF

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Publication number
CN110265178A
CN110265178A CN201910583229.5A CN201910583229A CN110265178A CN 110265178 A CN110265178 A CN 110265178A CN 201910583229 A CN201910583229 A CN 201910583229A CN 110265178 A CN110265178 A CN 110265178A
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China
Prior art keywords
glue
flexible transparent
coining
film
preparation
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CN201910583229.5A
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Chinese (zh)
Inventor
仇明侠
陈业旺
王秋霞
王宁
胡路峰
韩培刚
苏耀荣
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Shenzhen Technology University
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Shenzhen Technology University
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Priority to CN201910583229.5A priority Critical patent/CN110265178A/en
Publication of CN110265178A publication Critical patent/CN110265178A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Abstract

The present invention relates to conductive material technical fields, and in particular to a kind of preparation method of flexible transparent conducting film, comprising steps of smearing a lamination print glue on flexible transparent substrate end face;Micro-nano columnar arrays figure is imprinted on coining glue;The coining glue between two cylinders is removed to expose flexible transparent substrate;Layer of metal film is deposited in flexible transparent substrate and coining glue;It removes the coining glue in flexible transparent substrate and imprints the metal film on glue, obtain electrically conducting transparent network.Flexible transparent conducting film is prepared by the method that nano impression and plated film combine in the present invention, the blade coating metal conductive paste filling nano impression trench approach for overcoming Conventional nano coining auxiliary prepares conductive film and there are problems that broken string, improve the electric conductivity of flexible transparent conducting film, the stability of the flexible transparent conducting film of formation is more preferable, high yield rate.

Description

A kind of preparation method of flexible transparent conducting film
Technical field
The present invention relates to conductive material technical fields, and in particular to a kind of preparation method of flexible transparent conducting film.
Background technique
Transparent conductive film (ITO) is a kind of both transparent and conducting film.Because its in visible-range have it is high Transmitance and higher conductivity, in luminescent device, photovoltaic device, optical waveguide, sensor, plate of flat liquid crystal display, electricity The fields such as color-changing window, electromagnetic shielding and electrostatic prevention film are caused to be widely applied.And with the development of science and technology, it is more and more Electronic device start to develop towards flexibility, ultrathin direction so that the demand to flexible transparent conductive film is increasingly urgent to.It is soft Property transparent conductive film not only there is the photoelectric characteristic of glass substrate transparent conductive film, and there are many more particular advantages, examples Such as can provide durability more better than traditional ITO, high flexibility, low resistance, light weight, small size, it is non-friable, be easy to large area Production, low cost and the advantages that be readily transported can be widely applied to bendable display, vinyl house, vehicle glass and civilian Building glass pad pasting, can flexing the fields such as portable solar battery, intelligent skin, wearable device and sensor. Therefore, the excellent flexible transparent conductive film of exploitation photoelectric properties has broad application prospects.
Currently, flexible transparent conducting film industrial applications it is most be transparent conductive film, but the material compares Crisp, preparation temperature is higher, additionally since containing metal In in film, it is a kind of rare metal, more rare, and price is relatively more high It is expensive, it is at high cost, and In is toxic, pollutes environment, is unfavorable for environmental protection, so in the long run, being unfavorable for sustainable development.Therefore More and more researchers were dedicated to seeking various new materials to substitute ITO in recent years.Such as: the zno-based in flexible substrate Transparent conductive film, transparent metal or alloy firm, conductive oxide/metal film/conductive oxide three-decker multilayer film, Transparent conductive film based on silver nanowires or nano particle, the transparent conductive film based on graphene and carbon nanotubes, conduction Nitride and boride film and high-molecular organic material conductive film etc..
And there are many method for preparing flexible transparent conductive film, can be divided into physical deposition techniques and chemical deposition technique two is big Class, wherein physical deposition techniques mainly include magnetron sputtering, vacuum vapor plating, pulse laser deposition, ion film plating, silk-screen and Ink-jet printing etc.;Chemical deposition technique mainly includes chemical vapor deposition, collosol and gel, spray pyrolysis and molecular beam epitaxy Deng.It is most commonly used for magnetron sputtering embrane method that ito thin film is prepared in the past.This method is directly splashed by magnetic control on flexible substrates It penetrates coating machine and obtains transparent conductive film.And with the reduction of In content in nature, printing rule is recent years system Metal material with nanometer scale is first dissolved in organic solvent by the main method of standby non-In flexible transparent conducting film, this method It is prepared into conductive ink, then conductive ink is deposited in flexible transparent substrate by printing or printing technique, after sintering Form conductive network.By controlling the line width of conductive network, its maximum width is made to be limited in the resolution ratio of human eye hereinafter, without lines Region be transmission region, to realize the control to film surface square resistance and light transmittance in a certain range.Use print Mainly there are company, Dai Nippon Printing, Fujiphoto, Sony in the company that brush method prepares patterned flex transparent conductive film And German company PolyIC company etc..These companies largely utilize print process, by making electroconductive particle form fine net Shape pattern forms transparent membrane, obtains the flexible transparent conductive film haveing excellent performance.But use printing technology system Restriction of the graphics resolution by printing technology in the transparent conductive film film of work, it is difficult to meet high-resolution application demand.Cause Some companies prepare transparent conductive film using stamping technique recently for this, and this method can the only required portion on film bottom plate Divide and form uniform groove structure, conductive ink is then filled by the method in the trench by blade coating, to be formed transparent Conductive network, this method prepare relatively easy, can save the multiple tracks production process such as vapor deposition and etching.And using nano impression or Reel-to-reel mode carries out continuous production, it can be achieved that large-scale production.
Suzhou NanoGrid Technology Co., Ltd. of UniPixel company, the U.S. and the country all prepares soft in this way Patterned transparent conductive film on property substrate.But it is saturating using nano impression and blade coating conductive ink filling trench approach preparation When bright conductive film, it is easy the hole and disconnection problem that cause transparent conductive film to be locally present because of fill ink deficiency, shadow The yield rate and stability of product are rung.Therefore, preparation with environment is compatible, green non-poisonous, cheap, electric conductivity and light transmission The good patterned flex transparent conductive film of property is still nearest research hotspot.
Summary of the invention
The technical problem to be solved in the present invention is that in view of the above drawbacks of the prior art, a kind of flexible and transparent is provided and is led The preparation method of electrolemma overcomes the existing flexible transparent conducting film for preparing to be easy to appear hole or broken string, leads to flexible and transparent conductive The problem that membrane stability is poor, yield rate is low.
The technical solution adopted by the present invention to solve the technical problems is: providing a kind of preparation side of flexible transparent conducting film Method, comprising steps of
A lamination print glue is smeared on flexible transparent substrate end face;
Micro-nano columnar arrays figure is imprinted on coining glue;
The coining glue between two cylinders is removed to expose flexible transparent substrate;
Layer of metal film is deposited in flexible transparent substrate and coining glue;
It removes the coining glue in flexible transparent substrate and imprints the metal film of glue upper surface, obtain electrically conducting transparent network.
Still more preferably scheme of the invention is: described that micro-nano columnar arrays figure is imprinted on coining glue including walking It is rapid:
It will be stamped on the coining glue of smearing with the covering of the soft template of pores array structure;
Coining glue is solidified;
Soft template is withdrawn into coining glue and obtains micro-nano columnar arrays figure.
Still more preferably scheme of the invention is: described to imprint micro-nano columnar arrays figure on coining glue and further include Step:
The impressing hard template of the metal mesh hole array structure design micro-nano array structure of three-dimensional column as needed;
Prepare three-dimensional silica template corresponding with the impressing hard template of design;
Duplication obtains the soft template of micro-nano hole array identical as three-dimensional silica template size but opposite structure;
Soft template with pores array structure is covered on coining glue.
Still more preferably scheme of the invention is: metal mesh hole array structure design three-dimensional column as needed is micro- The impressing hard template of nano array structure comprising steps of
The minimum resolution of things, the total transmitance of film and imprint process are required in design impressing hard template according to human eye Hole accounts for the duty ratio of entire pores array structure;
Metal between square resistance as needed and the size and two holes of resistivity design pores array structure mesoporous The line width of film.
Still more preferably scheme of the invention is: the duty ratio is higher than 85%.
Still more preferably scheme of the invention is: use oxygen plasma bombardment removal two cylinders between coining glue with Exposure flexible transparent substrate.
Still more preferably scheme of the invention is: depositing one in flexible transparent substrate and coining glue using vacuum coating Layer metal film.
Still more preferably scheme of the invention is: using organic solvent dissolution coining glue, removing in flexible transparent substrate Coining glue and imprint glue upper surface metal film.
Still more preferably scheme of the invention is: smearing on flexible transparent substrate end face by using photoresist spinner One lamination print glue.
Still more preferably scheme of the invention is: the electrically conducting transparent network is circle hole shape array structure.
The beneficial effects of the present invention are compared with prior art, micro- by imprinting out on flexible transparent substrate end face Nanometer column array pattern, then removes coining glue remaining between two cylinders to expose flexible transparent substrate, later in flexibility Layer of metal film is deposited on transparent substrates and coining glue;It removes the coining glue in flexible transparent substrate and imprints the gold of glue upper surface Belong to film, obtain electrically conducting transparent network, so that flexible transparent conducting film be prepared, does not need conductive nano filled therewith to micro- In nano impression slot, a possibility that causing metal mesh to break since filled therewith is discontented, the flexible and transparent conductive of formation are reduced The smooth surface of film, metal film is uniform, and electric conductivity, translucency and stability are more preferable, improves yield rate.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples, in attached drawing:
Fig. 1 is the flow diagram of the preparation method of flexible transparent conducting film of the invention;
Fig. 2 is the flow diagram of preparation soft template of the invention;
Fig. 3 is the flow diagram of the micro-nano columnar arrays figure of coining of the invention;
Fig. 4 is the flow diagram of design three-dimensional structure impression block of the invention;
Fig. 5 is the flowage structure schematic diagram of the preparation method of flexible transparent conducting film of the invention;
Fig. 6 is the planar structure schematic diagram of flexible transparent conducting film prepared by preparation method of the present invention.
Specific embodiment
Now in conjunction with attached drawing, elaborate to presently preferred embodiments of the present invention.
As shown in Figures 1 and 5, the present invention provides a kind of preferred embodiment of the preparation method of flexible transparent conducting film.
A kind of preparation method of flexible transparent conducting film, comprising steps of
S10, a lamination print glue 20 is smeared on 10 end face of flexible transparent substrate;
S20, micro-nano columnar arrays figure is imprinted on coining glue 20;
Coining glue 20 between S30, two cylinders of removal is to expose flexible transparent substrate 10;
S40, layer of metal film 30 is deposited in flexible transparent substrate 10 and coining glue 20;
S50, it removes the coining glue 20 in flexible transparent substrate 10 and imprints the metal film 30 of 20 upper surface of glue, obtain transparent Conductive network.
By imprinting out micro-nano columnar arrays figure on the coining glue 20 on 10 end face of flexible transparent substrate, then go Except the coining glue 20 between two cylinders is to expose flexible transparent substrate 10, one is deposited in flexible transparent substrate 10 and coining glue 20 Layer metal film 30;After removing the coining glue 20 in flexible transparent substrate 10 and imprinting the metal film 30 on glue 20, transparent lead is obtained Electric network is not needed by conductive nano filled therewith into micro-nano imprint slot so that flexible transparent conducting film be prepared, drop A possibility that low broken string, the smooth surface of the flexible transparent conducting film of formation, metal film 30 uniformly, electric conductivity, translucency and Stability is more preferable, improves yield rate.The corresponding structural schematic diagram of the process of the preparation method of the flexible transparent conducting film such as Fig. 5 It is shown.The planar structure schematic diagram of the flexible transparent conducting film prepared in the present embodiment is as shown in Figure 6.
Wherein, the flexible transparent substrate 10 can be the flexible material of institute in visible light wave range light transmittance greater than 85% Material, such as polyethylene terephthalate vinegar (PET), polymethacrylic acid methyl ester (PC is commonly called as acrylic), the flexibility for being added to plasticizer Polyvinyl chloride (PVC) and polymethyl methacrylate (PMMA is commonly called as organic glass), polyimides (PI), polyphtalamide (PPA), dimethyl silicone polymer (PDMS) and Polymethyl methacrylate (PVMS) etc..It is needed when selecting flexible transparent substrate 10 Selecting it to visible light transmitance with higher, and in the organic solvent of part, property does not change.Flexibility in the present embodiment Transparent substrates 10 are preferably PET substrate.
And the electrically conducting transparent network is using polygon or round hole as the network array architecture of basic unit.Its Middle polygonized structure includes: triangle, trapezoidal, rectangle, square, diamond shape, pentagon, hexagon, octagon etc. or several shapes The composite construction of shape.Circular configuration includes: circle, semicircle, ellipse, annular or its composite construction etc..These pores arrays pass through Polygon or round adjacent side, which is shared to be connected, constitutes metalolic network.Electrically conducting transparent network in the present embodiment is preferably circle hole shape battle array Array structure.Corresponding, the shape of the cross section of micro-nano columnar arrays figure middle column body is circle.Circle hole shape array structure more holds Easy processing reduces whole preparation cost.
In addition, the metal film 30 can be metallic film, alloy firm (including gold, silver, copper, aluminium, titanium, nickel, molybdenum etc.), The conductive films such as indium tin oxide, II-VI group conductive oxide, carbon nanotube, silver nanowires, conductive polymer material.It is described Coining glue 20 is ultraviolet stamping glue.
It, in step slo, will before a lamination print glue 20 is smeared on 10 end face of flexible transparent substrate in the present embodiment Flexible transparent substrate 10 is cleaned up and is dried in alcohol, ethylene glycol and deionized water, and the flexible and transparent after cleaning is served as a contrast It pastes on 8 inches of surface polishing of silicon wafer at bottom 10.And using photoresist spinner, in cleaned flexible transparent substrate The lamination of spin coating one print glue 20 on 10 end faces.Spin coating is carried out by photoresist spinner and imprints glue 20, is smeared uniform.
With reference to Fig. 3, in step S20, it is described coining glue 20 on imprint micro-nano columnar arrays figure comprising steps of
S24, the covering of soft template 40 with pores array structure is stamped on the coining glue 20 of smearing;
S25, coining glue 20 is solidified;
S26, by soft template 40 withdraw coining glue 20 obtain micro-nano columnar arrays figure.
Specifically, soft template 40 is covered on the upper surface of coining glue 20, is put into nano marking press, in nano marking press Apply pressure and pressure maintaining certain time, and under conditions of vacuum and high pressure, the solidified imprinting under high-pressure sodium lamp ultraviolet light Glue 20 takes soft template 40 off after then removing pressure, i.e., obtains micro-nano column battle array in the upper surface of flexible transparent substrate 10 Column figure.Wherein, the pressure in nano marking press is 0.3MPa, and the dwell time is 2 minutes, is exposed 45 seconds, uses these ginsengs The micro-nano columnar arrays figures coining effects that number imprints out are more preferable, and structure is more stable, is more advantageous to and subsequent prepares transparent lead Electric network.
Wherein, the nano marking press is Wuxi Ying Pulin nano-imprinting apparatus.
Further, it with reference to Fig. 2, in step S20, before step S10, needs to be designed system to soft template 40 It is standby, comprising steps of
The coining hard mold of S21, the metal mesh hole array structure design micro-nano array structure of three-dimensional column as needed Plate;
S22, preparation three-dimensional silica template corresponding with the impressing hard template of design;
S23, duplication obtain the soft template 40 of micro-nano hole array identical as three-dimensional silica template size but opposite structure;
S24, the soft template 40 with pores array structure is covered on coining glue 20.
Step S21 to step S23 is the process step for preparing soft template 40.
Wherein, in step S23, using PDMS as material, it is opposite that duplication obtains but structure identical as three-dimensional silica template size Soft template 40, thus using soft template 40 be covered on coining glue 20 on coining obtain a nanometer column array pattern.Silicon or quartz Hardness and flatness it is good.The opposite soft template 40 of structure be covered on coining glue 20 on coining obtain nanometer column array pattern with The nanometer column array pattern of three-dimensional silica template is identical.
And in step S22, three-dimensional structure of the three-dimensional silica template by photoetching or electron Beam Machining according to design Prepare the corresponding three-dimensional silica template of columnar arrays stay in place form.In other embodiments, stone made of quartz also can be used English three-dimensional silica template obtains the soft template 40 that size is identical but structure is opposite to replicate.
With reference to Fig. 4, in the step s 21, metal mesh hole array structure as needed designs the micro-nano battle array of three-dimensional column The impressing hard template of array structure comprising steps of
S211, impressing hard template is required to the minimum resolution of things, the total transmitance of film and imprint process according to human eye Hole accounts for the duty ratio of entire pores array structure;
Between S212, square resistance as needed and the size and two holes of resistivity design pores array structure mesoporous The line width of metal film 30.
In step S211, the total transmitance of film is set as t, three-dimensional structure impression block Hole accounts for entire pores array The duty ratio of structure is set as A, and the transmitance of flexible transparent substrate 10 is set as T, then the total transmitance t of film, duty ratio A, Yi Jirou The relationship that the transmitance of property transparent substrates 10 is set as T three meets t < T*A, according to the total transmitance of film and flexible transparent substrate 10 transmitance determines the duty ratio needed.In the present embodiment, the duty ratio is higher than 85%, i.e. the area of described hole accounts for whole 85% or more of a three-dimensional structure impression block gross area.Duty ratio is disposed above 85%, the flexible and transparent being prepared The translucency of conductive film is more preferable.
In step S212, the square resistance and resistivity for needing flexible transparent conductive film to be prepared are according to experiment and reason It is determined by setting value.Designed according to the square resistance of setting and resistivity the size for determining pores array structure mesoporous and two holes it Between metal film 30 line width.The line width of metal film 30 is 200nm~2 μm, the face in hole in described hole array structure pitch of holes Product 30 gross area of Zhan Kongyu metal film 85% or more, and the diameter in hole be 1 μm~10 μm, the depth in hole should be 100nm~ 500nm.Preferably, the diameter in the hole is 1 μm, and the depth in hole is 300nm.The line width value of metal film is 200nm~2 μm, Eye-observation may be used as transparent conductive film less than the metal wire less than 2 microns, and the preparation of the corresponding soft template used It is at low cost.And the depth-width ratio for the micro-nano columnar arrays figure middle column body that aforementioned impression obtains is corresponded to no more than 1:1, coining Cylinder out is not easy to collapse.
In the present embodiment, in step s 30, use the coining glue 20 between oxygen plasma bombardment two cylinders of removal with sudden and violent Reveal flexible transparent substrate 10.Specifically, the sample that coining obtains micro-nano columnar arrays figure is put into oxygen plasma cleaning In machine, dry etching 10 seconds, coining glue 20 remaining in two cylinder gaps in micro-nano columnar arrays figure is removed, its exposing is made The flexible transparent substrate 10 of lower layer.
And in step s 40, one layer of metal is deposited in flexible transparent substrate 10 and coining glue 20 using vacuum coating Film 30.Wherein, the method for vacuum coating has magnetron sputtering, hot evaporation, electron beam evaporation plating or pulse laser deposition, and is in room temperature Lower progress.The metal film 30 formed after deposition with a thickness of 200nm.
Further, coining glue 20 is dissolved using organic solvent, removes coining glue 20 and pressure in flexible transparent substrate 10 Print the metal film 30 of 20 upper surface of glue.The organic solvent is acetone or other can dissolve the organic solvent of coining glue 20.
Specifically, the sample of metal-plated membrane 30 is immersed in the container equipped with organic solvent, dissolution coining glue 20, with It removes coining glue 20 and imprints the metal film 30 of 20 upper surface of glue, eventually form the gold in flexible transparent substrate 10 in array structure Belong to film 30.
Preparation method is simple for flexible transparent conducting film provided by the invention, both can be to avoid nano impression and conduction Ink combine transparent conductive film trench fill that method prepares it is insufficient and the phenomenon that cause metal mesh to break, and can be to avoid Due to caused by heating the problem of flexible substrate buckling deformation during common photoetching drying coining glue 20.Make in the present invention Method is to obtain high-resolution micro-nano in the upper surface of flexible transparent substrate 10 using ultraviolet solidified nano stamping technique Rice columnar arrays figure, then redeposited metal film 30, later by getting rid of micro-nano column and its in organic solvent solution The metal film 30 of upper surface is achieved with micro-nano compliant conductive network, to be the system of various novel micro nanometer photoelectric components Standby to lay the foundation, it will be in manufacture flexible light source, flexible thin-film solar cell, wearable device and flexible sensor, frivolous The fields such as display and Electronic Paper have broad application prospects.
Further, the flexible transparent conducting film that prepared by the method for the present invention is since film is deposited on by way of plated film In flexible transparent substrate, film surface is flat and smooth, good conductivity.And with nano impression instead of traditional complicated first light The method that post-etching method prepares porous metal film is carved, preparation process has been simplified, has reduced costs, and machinable conductive gold The line width for belonging to line is smaller, breaches the limit of photoetching, is conducive to the preparation of the micro-nano photoelectric device of smaller szie.
This method directly spin coating, coining and plated film at normal temperature, greatly reduce flexible transparent substrate 10 by warpage Probability, moreover, the conductive film even film layer of preparation is smooth by directlying adopt the first plated film method that organic solvent cleans again, solution Usually utilizing the technologies such as nano impression and blade coating conductive ink to prepare before having determined, transparent conductive film film surface is coarse, easily goes out Disconnection problem caused by existing hole, further reduced the square resistance of flexible transparent conducting film, improves the conductance of film Rate.
Simple using the available structure of the preparation method of flexible transparent conducting film of the invention, square resistance is in 100 Ω/ Hereinafter, the flexible transparent conducting film for being 75% or more to visible light transmittance, electric conductivity is excellent, is widely used in flexibility The neck such as display, touch panel, flexible thin-film solar cell, Electronic Paper, flexible light, wearable device and flexible sensor Domain.
It should be understood that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations, to ability It for field technique personnel, can modify to technical solution illustrated in the above embodiments, or special to part of technology Sign is equivalently replaced;And all such modifications and replacement, it should all belong to the protection domain of appended claims of the present invention.

Claims (10)

1. a kind of preparation method of flexible transparent conducting film, which is characterized in that comprising steps of
A lamination print glue is smeared on flexible transparent substrate end face;
Micro-nano columnar arrays figure is imprinted on coining glue;
The coining glue between two cylinders is removed to expose flexible transparent substrate;
Layer of metal film is deposited in flexible transparent substrate and coining glue;
It removes the coining glue in flexible transparent substrate and imprints the metal film of glue upper surface, obtain electrically conducting transparent network.
2. preparation method according to claim 1, which is characterized in that described to imprint micro-nano columnar arrays on coining glue Figure comprising steps of
It will be stamped on the coining glue of smearing with the covering of the soft template of pores array structure;
Coining glue is solidified;
Soft template is withdrawn into coining glue and obtains micro-nano columnar arrays figure.
3. preparation method according to claim 2, which is characterized in that described to imprint micro-nano columnar arrays on coining glue Figure further comprises the steps of:
The impressing hard template of the metal mesh hole array structure design micro-nano array structure of three-dimensional column as needed;
Prepare three-dimensional silica template corresponding with the impressing hard template of design;
Duplication obtains the soft template of micro-nano hole array identical as three-dimensional silica template size but opposite structure;
Soft template with pores array structure is covered on coining glue.
4. preparation method according to claim 3, which is characterized in that metal mesh hole array structure design as needed The impressing hard template of the micro-nano array structure of three-dimensional column comprising steps of
Design impressing hard template Hole is required to the minimum resolution of things, the total transmitance of film and imprint process according to human eye Account for the duty ratio of entire pores array structure;
Square resistance as needed and resistivity design the metal film between the size and two holes of pores array structure mesoporous Line width.
5. the preparation method according to claim 4, which is characterized in that the duty ratio is higher than 85%.
6. preparation method according to claim 1, which is characterized in that using between oxygen plasma bombardment two cylinders of removal Coining glue to expose flexible transparent substrate.
7. preparation method according to claim 1, which is characterized in that using vacuum coating in flexible transparent substrate and coining Layer of metal film is deposited on glue.
8. preparation method according to claim 1, which is characterized in that using organic solvent dissolution coining glue, remove flexible The metal film of coining glue and coining glue upper surface in transparent substrates.
9. preparation method according to claim 1, which is characterized in that by using photoresist spinner in flexible transparent substrate A lamination print glue is smeared on end face.
10. -9 any preparation method according to claim 1, which is characterized in that the electrically conducting transparent network is circle hole shape Array structure.
CN201910583229.5A 2019-07-01 2019-07-01 A kind of preparation method of flexible transparent conducting film Pending CN110265178A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111103640A (en) * 2019-11-27 2020-05-05 瑞声通讯科技(常州)有限公司 Fresnel lens metal mold manufacturing method
CN111679556A (en) * 2020-07-08 2020-09-18 大连集思特科技有限公司 Manufacturing method of flexible transparent display screen based on nanoimprint technology

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102222538A (en) * 2011-03-11 2011-10-19 苏州纳格光电科技有限公司 Graphical flexible transparent conductive film and preparation method thereof
CN104651904A (en) * 2015-01-30 2015-05-27 北京大学 Preparation method of anodic-aluminum-oxide-based nano imprinting template
CN104835555A (en) * 2015-05-13 2015-08-12 南京邮电大学 Preparation method of patterned metal transparent conductive film
CN106448825A (en) * 2016-10-21 2017-02-22 苏州苏大维格光电科技股份有限公司 Graphical fine electroconductive film and production method thereof
CN106683791A (en) * 2016-12-20 2017-05-17 南京工业大学 Method for preparing flexible transparent conductive electrode having multi-stage metal grid structure
US20170152595A1 (en) * 2013-10-21 2017-06-01 Soochow University Preparation method for multi-layer metal oxide porous film nano gas-sensitive material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102222538A (en) * 2011-03-11 2011-10-19 苏州纳格光电科技有限公司 Graphical flexible transparent conductive film and preparation method thereof
US20170152595A1 (en) * 2013-10-21 2017-06-01 Soochow University Preparation method for multi-layer metal oxide porous film nano gas-sensitive material
CN104651904A (en) * 2015-01-30 2015-05-27 北京大学 Preparation method of anodic-aluminum-oxide-based nano imprinting template
CN104835555A (en) * 2015-05-13 2015-08-12 南京邮电大学 Preparation method of patterned metal transparent conductive film
CN106448825A (en) * 2016-10-21 2017-02-22 苏州苏大维格光电科技股份有限公司 Graphical fine electroconductive film and production method thereof
CN106683791A (en) * 2016-12-20 2017-05-17 南京工业大学 Method for preparing flexible transparent conductive electrode having multi-stage metal grid structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111103640A (en) * 2019-11-27 2020-05-05 瑞声通讯科技(常州)有限公司 Fresnel lens metal mold manufacturing method
CN111679556A (en) * 2020-07-08 2020-09-18 大连集思特科技有限公司 Manufacturing method of flexible transparent display screen based on nanoimprint technology

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