CN104795130A - Transparent conductive film and preparation method thereof - Google Patents
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Abstract
The invention relates to the technical field of conductive films, and particularly relates to a transparent conductive film and a preparation method thereof. The transparent conductive film comprises a transparent substrate and a transparent conductive layer arranged at one side the transparent substrate. The transparent conductive layer comprises a transparent gelatinous layer with graphical grooves being formed thereon and a graphical conductive mesh grid layer embedded in the grooves of the transparent gelatinous layer, wherein the upper surface of the transparent gelatinous layer is higher than, lower than or flush with the upper surface of the conductive mesh grid layer, the height difference is less than 300nm, and the surface toughness of the conductive mesh grid layer is 0.1-80nm. Compared with the prior art, the transparent conductive film disclosed by the invention has high surface evenness, and can meet requirements of OLED devices, OPV devices, LEC devices, printing photoelectric devices and the like for the conductive film evenness.
Description
Technical field
The present invention relates to transparent conductive membrane material field, particularly relate to a kind of transparent conductive film being applicable to photoelectric device substrate and electrode, with and preparation method thereof.
Background technology
Nesa coating is widely used in field of photoelectric devices, and wherein the most classical transparent conductive membrane material is ITO(Indium Tin Oxides, tin indium oxide) glass.Ito glass sheet resistance is usually at about 10 to 100 Ω/, visible light transmissivity about 90%, surface roughness, within 2 polishings can reach 5nm, is widely used as the underlayer electrode of the organic or inorganic photoelectric devices such as organic electroluminescence device (OLED), organic photovoltaic devices (OPV), transistor, transform light energy device (LEC).
But along with above-mentioned photoelectric device technology is towards flexibility future development, flexible ITO nesa coating can not meet the technical need of flexible photoelectric device industry application.On the one hand, ITO anneals optimum temperature at about 360 DEG C, and because flexible substrate can not bear high temperature, flexible ITO annealing temperature is only about 140 DEG C, causes its sheet resistance up to 500 Ω/more than; On the other hand, ITO is rigid film, crisp and frangible, easily occurs crackle time bending, and sheet resistance is increased further, short for device lifetime during broad area device, and causes greatly efficiency low energy consumption high because of internal resistance.Therefore, development replaces ITO and to meet the flexible transparent conducting film technology of device requirement significant.
For above-mentioned photoelectric device, the technical need of flexible transparent conducting film is comprised: sheet resistance is lower than 100 Ω/, and little as much as possible; Visible light transmissivity >80%, and high as much as possible; Surface roughness is lower than 100nm, and low as much as possible; Electrode mates with device function layer in work function, can realize the efficient injection of electric charge from electrode.
The nesa coating of existing two kinds of conductive metal material: one is coated with on a flexible substrate with being uniformly dispersed by metal nanometer line ink, sintering obtains nesa coating; Another kind is that metal nanoparticle is made ink, by the method for the traditional printing such as silk screen, intaglio plate, forms conductive grid structure on a transparent substrate, obtains nesa coating after sintering.But the conductive layer of these methods is convex is exposed to conducting film surface, the anti-scratch ability of anti-scratch.Although increase conductive layer thickness sheet resistance can be reduced, can significantly reduce its light transmission.Namely conductivity and light transmittance restrict mutually.In addition, printing nanometer ink nesa coating technology is because of the restriction by printing technology, and its grid live width is usually at more than 15um, and naked eyes are visible, is difficult to meet high-resolution photoelectric device application demand.
Disclose a kind of patterned transparent conducting film technology in CN102222538: fill silver nano-grain ink in a groove, after sintering, conducting film thickness is less than gash depth, step up to more than 1um, the favourable anti-scratch ability being improved touch screen of this structure.Such conducting film is comparatively suitable for touch screen, and when only having the photoelectric device of a hundred or so nanometer for thickness, easily occur that electric field is uneven, the problem that shorted devices punctures, cannot meet the requirement to conducting film evenness such as OLED, OPV, LEC, printing photoelectric device.
Visible, also need a kind of transparent conductive film being applicable to these photoelectric devices.
Summary of the invention
The present invention is intended to the above problem and the other problems that overcome prior art, provides a kind of transparent conductive film with high surfaces evenness, and preparation method thereof.
One aspect of the present invention provides a kind of transparent conductive film, and comprise transparent substrates and be located at the transparency conducting layer on described transparent substrates side, described transparency conducting layer comprises: the transparent colloidal layer being formed with patterned groove thereon; And the patterned conductive mesh layer be embedded in the described groove of described transparent colloidal layer, the upper surface of wherein said transparent colloidal layer is in the difference in height of the upper surface of described conductive mesh layer at below 300nm, and the surface roughness of described conductive mesh layer is 0.1nm ~ 80nm.
In some embodiments, the live width of described conductive mesh layer is 500nm ~ 8um; In described conductive mesh layer, the average perimeter of single conductive grid is 100um ~ 800um; The gross area of described conductive mesh layer is 5% ~ 20% accounting for described conductive film area; The thickness of described conductive mesh layer is 1um ~ 10um.
In some embodiments, can also with filling and leading up decorative layer in described conductive mesh layer, described in fill and lead up decorative layer material be conducting polymer.
In some embodiments, the visible light transmissivity of described transparent colloidal layer, and can by plasma etching more than 90%.
In some embodiments, the material of described conductive mesh layer can comprise silver, copper, conducting polymer, or their combination in any.
In some embodiments, the upper surface of described conductive mesh layer can also comprise carbon nano-tube, Graphene, and the metal of work function >4.8eV, oxide, organic molecule, organic polymer, ion salt, or their combination in any.
The present invention also provides a kind of method for the preparation of transparent conductive film of the present invention, comprises step: S1 impresses the transparent colloidal layer formed with trench network on a transparent substrate; S2 is filled conductive material in described trench network, and sintering forms conductive mesh layer, and wherein, described electric conducting material is ink or the slurry with the solid content of 30% ~ 90% and the viscosity of 15cP ~ 30000cP.
Or, for the preparation of the another kind of method of transparent conductive film of the present invention, can step be comprised: S1 impresses the transparent colloidal layer formed with trench network on a transparent substrate; S2 is filled conductive material in described trench network, and sintering forms conductive mesh layer; The upper surface of conductive mesh layer and described transparent colloidal layer described in S3 leveling, wherein, it is one or more that described leveling comprises in following operation: S31 is the thinning described transparent colloidal layer of plasma etching optionally, to the upper surface of described transparent colloidal layer and the upper level difference of described conductive mesh layer at below 300nm; S32 is depositing metal layers in described conductive mesh layer optionally, and extremely the upper surface of described transparent colloidal layer and the upper level difference of described conductive mesh layer are at below 300nm; S33 is coated with and fills and leads up decorative layer in described conductive mesh layer; S34 polishing polishes described conductive mesh layer upper surface.
In some embodiments, the deposition in step S32 can comprise electroplating deposition and/or electroless deposition.
In some embodiments, described electric conducting material also can for having ink or the slurry of the solid content of 30% ~ 90% and the viscosity of 15cP ~ 30000cP.
Compared with the conductive film of prior art, transparent conductive film of the present invention has good surface smoothness, can meet the requirement of OLED, OPV, LEC, printing photoelectric device etc.The duty ratio adjusting conductive grid and transparent colloidal layer in transparency conducting layer respectively can be passed through, and the thickness of conductive mesh layer, realize independently regulating separately film light transmission and impedance.Conductive mesh layer is embedded in transparent colloidal layer, significantly improves the anti-scratch ability of anti-scratch of film.
Accompanying drawing explanation
Fig. 1 indicative icon is according to the structure of transparent conductive film of the present invention.
Fig. 2 indicative icon is according to the conductive layer plane of transparent conductive film of the present invention.
The cross-section structure of Fig. 3 A and Fig. 3 B difference indicative icon conductive film before and after plasma etching.
The cross-section structure of the transparent conductive film of Fig. 4 indicative icon after polishing polishes.
Reference numeral: 11 transparent substrates; 12 transparency conducting layers; 21 transparent colloidal layer; 22 conductive mesh layer; D mesh width; L grid girth; H1 depth of groove; The shoulder height that the after-contraction of h2 electric conducting material sintering is formed; H3 etches the difference in height with conductive mesh layer upper surface after thinning transparent colloidal layer; H conductive grid layer thickness.
Embodiment
The present invention discloses a kind of transparent conductive film for photoelectric device substrate and electrode, and its structure as shown in Figure 1, comprises transparent substrates 11 from bottom to top, and is located at the transparency conducting layer 12 on transparent substrates 11 side.Transparency conducting layer 12 comprises transparent colloidal layer 21 and conductive mesh layer 22, and transparent colloidal layer 21 is provided with patterned groove, and conductive mesh layer 22 is embedded in the groove of transparent colloidal layer 21, forms patterned conductive mesh layer 22.
Transparent conductive film of the present invention has higher surface smoothness, imbody both ways: the difference in height between the upper surface of (1) transparent colloidal layer 21 and the upper surface of conductive mesh layer 22 is less than or equal to 300nm; (2) surface roughness of conductive mesh layer 22 is between 0.1nm ~ 80nm.Wherein transparent colloidal layer 21 upper surface can a little more than, a little less than, or flush the upper surface in conductive mesh layer 22.
Transparent conductive film of the present invention, because of its embedded structure, significantly strengthens the anti-scratch ability of anti-scratch; High surface smoothness also makes it can meet the demand of photoelectric device.This is different from one of existing nesa coating innovation point.
In conductive mesh layer of the present invention, conductive grid structure can be periodic structure, quasi periodic structures, or is equally distributed polygon composite figure.Wherein, conductive grid live width can be 500nm ~ 8um; Single conductive grid or polygonal average perimeter can be 100um ~ 800um.
Such as in order to improve light transmission, the live width of conductive grid can be reduced, or increase the girth of single grid; Vice versa.So, by regulating live width, girth, the area of conductive grid, regulate the duty ratio of conductive grid and transparent colloidal layer in transparency conducting layer, make the gross area shared by embedded conductive grid be 5% ~ 20% of conducting film area, and then regulate the light transmittance of transparent conductive film to reach 80% ~ 95%.
The impedance of transparent conductive film of the present invention is undertaken regulating by the thickness of conductive mesh layer.The thickness of conductive mesh layer is larger, and the square resistance of film is less; Vice versa.In transparent conductive film of the present invention, the thickness of conductive mesh layer can regulate between 1um ~ 10um.Take this, when replacing ITO conductive substrates in for photoelectric devices such as OLED, OPV, LEC, transistors, the sheet resistance of film all can realize within the scope of 0.1 Ω/ ~ 100 Ω/.
Transparent conductive film according to the present invention has high light transmittance and low areal resistance.Sheet resistance is minimum reaches 0.1 Ω/; Time simultaneously in conjunction with the substrate that transparency is high, light transmission rate can more than 92%.This is for photoelectric devices such as OLED, particularly broad area device, can effectively improve device inside field uniformity, and reduce internal resistance energy consumption.In addition light transmission and square resistance Independent adjustable, is conducive to by different Demand Design conductive film parameter, reduces the cost of raw material of conductive film.This is transparent conductive film of the present invention another innovative point compared with prior art.
Transparent colloidal layer can be the colloidal materials formed after liquid curing, and its visible light transmissivity is more than 90%.Such as, it can be thermoplastic polyester, photo-curable polymer, heat curing copolymer, AB xanthan polymer etc.In some embodiments, transparent colloidal layer can also by plasma etching.
The material main component of conductive mesh layer can be the one in silver, copper, conducting polymer, or their combination.In addition, in order to improve the charge injection of device further, carbon nano-tube, Graphene and high work function can also be mixed with (such as high than the work function of silver in the material of conductive mesh layer, i.e. >4.8eV) material (such as metal, oxide, organic molecule, organic polymer, ion salt etc.), or their combination.
Conductive mesh layer can be passed through conductive ink or filled therewith groove, and after blade coating, sintering forms.Preferably, the ink that solid content is high, viscosity is high or slurry can be used to carry out blade coating, to reduce shrinkage ratio.The solid content of such as ink or slurry can be 30% ~ 90%, and viscosity can be 15cP ~ 30000cP.Preferably, solid content can be more than or equal to 50%, and viscosity can at more than 350cP.Such as, solid content is 75%, viscosity is 850cP conductive ink or slurry can be used.Usually, higher solids content also means higher viscosity simultaneously, and less filling shrinkage ratio, and the conductive mesh layer filling effect obtained is finer and close, and conductivity is better.Also should be understood that the concrete conductive ink or paste composition that depend on use, have ink or the slurry of identical solid content, its viscosity also may have bigger difference.
In transparent conductive film of the present invention, adopt rich malleable metal, or flexible high high conductivity polymer is as conductive grid layer material.Its pliability is good, high with flexible photoelectric device compatibility; Adopt high, that viscosity the is high ink slurry of solid content to carry out blade coating during filled conductive layer, reduce shrinkage ratio; In addition, in ink slurry, mix high work function material composition, charge injection problem can also be improved.This is a transparent conductive film of the present invention innovative point more compared with prior art.
The present invention relates to the preparation method of this transparent conductive film on the other hand.
First, impression forms the transparent colloidal layer with trench network on a transparent substrate.Particularly, can die marks method be passed through, form the transparent colloidal layer with graphical network groove.Such as, the transparent colloid material before solidification is first coated with on a transparent substrate; The impression formboard with figure is closely ridden on transparent adhesive tape plasma membrane; Curing transparent gelatinous layer; Peel off impression formboard again, make to form grid groove in transparent colloidal layer.The control that can realize conductive network layer thickness by the degree of depth of embossed grooves on impression formboard.
Afterwards, filled conductive material in described trench network, as conductive ink or slurry, sinters electric conducting material is contracted in the groove of transparent colloidal layer, thus forms conductive mesh layer.
In the preferred embodiments of the present invention, electric conducting material selects high solids content, full-bodied ink or filled therewith groove, and to reduce its shrinkage ratio, the shoulder height reducing transparent colloidal layer and conductive mesh layer upper surface is poor.As described above, the solid content of conductive ink or slurry can be 30% ~ 90%, and viscosity can be 15cP ~ 30000cP.Preferably, solid content can be more than or equal to 50%, and viscosity can at more than 350cP.Such as, solid content is 75%, viscosity is 850cP conductive ink or slurry can be used.
Or, can after conductive mesh network layers be formed, by surface flattening operating procedure, improve the evenness of transparent conductive film upper surface, the shoulder height reducing conductive mesh layer and transparent colloidal layer upper surface is poor.Surface flattening can have following several approach:
The first is plasma etching reduction.That is, the optionally thinning described transparent colloidal layer of plasma etching, until the upper level difference of the upper surface of transparent colloidal layer and conductive mesh layer is decreased to below 300nm.The transparent colloidal layer now selected should by plasma etching.Such as, can plasma selective etching transparent colloidal layer, until with conductive grid upper surface flush or lower slightly.
The second approach is plated metal method.That is, optionally depositing metal layers in conductive mesh layer, until the upper level difference of the upper surface of transparent colloidal layer and conductive mesh layer is decreased to below 300nm.Deposition process can be plating or chemical plating, and by selectivity plating in conductive mesh layer, the height of lifting conductive mesh layer, until to flush with transparent colloidal layer or slightly high.
The third approach is for filling and leading up modification method.That is, needs further leveling conductive layer surface time, can be coated with in conductive mesh layer and fill and lead up decorative layer, with fill and lead up because of conductive mesh layer sintering shrinkage produce shoulder height.The material filling and leading up decorative layer can be conducting polymer, such as PEDOT:PSS.In addition, fill and lead up dressing agent and can also improve the injection of electric charge on interface.
4th kind of approach is that polishing polishes method.That is, polishing polishes described conductive mesh layer upper surface.
Should be understood that above several surface flattening approach also can combinationally use.Such as first use plasma selective etching transparent colloidal layer, until with conductive grid upper surface flush or lower slightly, then polishing polishes conductive layer surface.Or first by plating or chemical plating optionally plated metal in conductive mesh layer, until to flush with transparent colloidal layer or slightly high, then polishing polishes conductive layer surface.
Also should be understood that in the manufacture method by surface flattening raising evenness, may also be use high solids content as above, high viscosity conductive ink or slurry.But, (metal of plating, electroless deposition above such as conductive mesh layer, is also had when manufacture method comprises planarization step, or when filling and leading up decorative layer), the conductive mesh layer of filling can be slightly thin, and conductive ink used or the solid content of slurry and viscosity also can be slightly low.Such as can use the ink with the solid content of 30% ~ 50% and the viscosity of 15cP ~ 800cP or slurry.
Transparent conductive film of the present invention not only can be used as transparent conductive film, can also be used as the transparency conductive electrode part of photoelectric device.
Below in conjunction with drawings and the specific embodiments, be described in further detail the present invention.Although should be understood that the transparent substrates in embodiment has selected flexible material, as PEN; Transparent conductive film of the present invention also can use rigid material as transparent substrates, thus transparent conductive film of the present invention can be flexibility or rigidity film, and is applicable to flexible device and rigid device.
embodiment 1 transparent conductive film
1, structure
As shown in Figure 1, comprise transparent substrates 11 for PEN (PEN), thickness 125um, visible light transmissivity 94%, wherein substrate is to be selected from PET, PC, PMMA and glass equally; Transparent colloidal layer 21 in transparency conducting layer 12 is solvent-free UV solidified imprinting glue (its main component is acryl resin); Conductive mesh layer 22 is hexagonal structure (as shown in Figure 2), and its main component is silver.
Conductive mesh layer thickness h is 2.5um; Conductive grid live width d is 2um; The hexagonal girth l of grid is respectively 100um, 600um, 800um; The light transmission rate of transparent conductive film is respectively 70%, and 88%, 91%; Sheet resistance is respectively 0.8 Ω/, 1.2 Ω/, 38 Ω/.
2, preparation method
Transparent substrates PEN is coated with liquid UV solidified imprinting glue, solidifies under 365nm ultraviolet light with after impression formboard laminating pressurization, form transparent colloidal layer.Peel off impression formboard, transparent colloidal layer is formed hexagonal mesh groove, depth of groove h1 is 4.2um, and width d is 2um, as shown in fig. 2 and fig. 3 a.
Fill silver nano-grain slurry in a groove, and the silver slurry scraping noresidue on most top layer, form conductive mesh layer in 150 DEG C of sintering.Nesa coating conducts electricity, and sheet resistance is 0.5 Ω/.Wherein transparent colloidal layer upper surface is slightly higher than conductive mesh layer upper surface, and difference in height h2 is 1.4um, as shown in Figure 3A.
With plasma degumming machine (power 600W) at O
2etch thinning transparent colloidal layer 40 seconds under atmosphere, until conductive mesh layer upper surface is a little more than transparent colloidal layer upper surface, difference in height h3 is 0.3um, as shown in Figure 3 B.
Further polishing polishes the conductive grid of protrusion, and conductive mesh layer and transparent colloidal layer shoulder height reduce to 0, and the roughness Rz on conductive mesh layer Ag surface drops to from the 108nm before polishing and is less than 20nm.As shown in Figure 4.
3, apply
(1) by hexagon girth in this embodiment be 600um transparent conductive film be used as electrode, preparation OLED.
Device architecture is: transparent conductive film/PEDOT:PSS/m-MTDATA/TAPC/CBP:Ir (PPy) 3/TPBi/LiQ/Al conventional OLED device.After testing, its luminous efficiency reaches 32.5cd/A.ITO substrate same structure device efficiency is 30cd/A on year-on-year basis.
(2) by hexagon girth in this embodiment be 600um transparent conductive film be used as electrode, prepare organic solar batteries.
Battery structure is transparent conductive film/ZnO/PCBM:P3HT/Al, active area 1.6cm
2.After testing, device photoelectric conversion efficiency is 3.02%.The identity unit efficiency of ITO is only 1.2% on year-on-year basis.
embodiment 2 nesa coating surface smoothness is on the impact of photoelectric device
The method of embodiment 1 is adopted to prepare transparent conductive film.
Depth of groove 3.2um, width 2um, in a groove knife filling Ag ink, sintering.The line roughness Rz on conductive mesh layer Ag surface is that 107nm, conductive mesh layer Ag are surperficial lower than UV glue upper surface, and shoulder height is 1.1um.It is 2 Ω/ that test obtains sheet resistance.
(1) in the leveling of this conductive film upper surface spin coating PEDOT:PSS layer.OPV device is prepared: device can work with it, but poor stability, device efficiency fluctuation is large; Prepare OLED with it, device can record i-v curve, but can not be luminous.
(2) to the thinning UV glue of this conductive film plasma degumming machine, after shoulder height drops to 500nm, spin coating PEDOT:PSS layer backward step is 300nm, preparation OPV device.Device can work, and stability increases substantially, and device efficiency is stable and higher than ITO device.Show that the step of 300nm has met the application demand of OPV.OLED is prepared with it, can be luminous, but easily puncture, luminous efficiency is on the low side.
(3) remove photoresist to step further to this conductive film to be ± 100nm, spin coating PEDOT:PSS layer, to prepare OLED.Device is luminous normal, and maximum brightness can reach 6500cd/m
2, but poor stability, efficiency fluctuation is large.
(4) step be ± 100nm transparent conductive film basis on, polishing polishes conductive mesh layer, conductive mesh layer and transparent colloidal layer shoulder height difference is made to reduce to 13nm, the roughness Rz on conductive mesh layer Ag surface drops to about 25nm from the 100nm that is greater than before polishing, spin coating PEDOT:PSS layer, preparation OLED.Device brightness is maximum to 15000cd/A, and efficiency reaches 32cd/A and stablizes.Visible, substantially meet the application demand of OLED.
Accurate control is removed photoresist and can be improved conducting film evenness further with adopting high accuracy polishing grinding, thus is more conducive to OLED efficiency and stability.
The above the specific embodiment of the present invention, does not form limiting the scope of the present invention.Various other that any technical conceive according to the present invention is made change and distortion accordingly, all should be included in the protection range of the claims in the present invention.
Claims (10)
1. a transparent conductive film, is characterized in that, comprise transparent substrates and be located at the transparency conducting layer on described transparent substrates side, described transparency conducting layer comprises:
Be formed with the transparent colloidal layer of patterned groove thereon; And
Be embedded in the patterned conductive mesh layer in the described groove of described transparent colloidal layer, wherein
The upper surface of described transparent colloidal layer with state the difference in height of upper surface of conductive mesh layer at below 300nm,
The surface roughness of described conductive mesh layer is 0.1nm ~ 80nm.
2. transparent conductive film as claimed in claim 1, is characterized in that,
The live width of described conductive mesh layer is 500nm ~ 8um;
In described conductive mesh layer, the average perimeter of single conductive grid is 100um ~ 800um;
The gross area of described conductive mesh layer is 5% ~ 20% accounting for described conductive film area;
The degree of depth of described groove is 1um ~ 10um.
3. transparent conductive film as claimed in claim 1, wherein, also with filling and leading up decorative layer in described conductive mesh layer, described in fill and lead up decorative layer material be conducting polymer.
4. transparent conductive film as claimed in claim 1, wherein, the visible light transmissivity of described transparent colloidal layer, and can by plasma etching more than 90%.
5. transparent conductive film as claimed in claim 1, wherein, the material of described conductive mesh layer comprises silver, copper, conducting polymer, or their combination in any.
6. transparent conductive film as claimed in claim 5, wherein, also carbon nano-tube is comprised in the material of described conductive mesh layer, Graphene, and the metal of work function >4.8eV, oxide, organic molecule, organic polymer, ion salt, or their combination in any.
7. for the preparation of a method for the transparent conductive film according to any one of claim 1 to 6, it is characterized in that, comprise step:
S1 impresses the transparent colloidal layer formed with trench network on a transparent substrate;
S2 is filled conductive material in described trench network, and sintering forms conductive mesh layer,
Wherein, described electric conducting material is ink or the slurry with the solid content of 30% ~ 90% and the viscosity of 15cP ~ 30000cP.
8. for the preparation of a method for the transparent conductive film according to any one of claim 1 to 6, it is characterized in that, comprise step:
S1 impresses the transparent colloidal layer formed with trench network on a transparent substrate;
S2 is filled conductive material in described trench network, and sintering forms conductive mesh layer;
The upper surface of conductive mesh layer and described transparent colloidal layer described in S3 leveling,
Wherein, what described leveling comprised in following operation is one or more:
S31 is the thinning described transparent colloidal layer of plasma etching optionally, and extremely the upper surface of described transparent colloidal layer and the upper level difference of described conductive mesh layer are at below 300nm;
S32 is depositing metal layers in described conductive mesh layer optionally, and extremely the upper surface of described transparent colloidal layer and the upper level difference of described conductive mesh layer are at below 300nm;
S33 is coated with and fills and leads up decorative layer in described conductive mesh layer;
S34 polishing polishes described conductive mesh layer upper surface.
9. method as claimed in claim 8, wherein, the deposition in step S32 comprises electroplating deposition and/or electroless deposition.
10. method as claimed in claim 8, wherein, described electric conducting material is ink or the slurry with the solid content of 30% ~ 90% and the viscosity of 15cP ~ 30000cP.
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