CN104795130B - Transparent conductive film and preparation method thereof - Google Patents
Transparent conductive film and preparation method thereof Download PDFInfo
- Publication number
- CN104795130B CN104795130B CN201410024902.9A CN201410024902A CN104795130B CN 104795130 B CN104795130 B CN 104795130B CN 201410024902 A CN201410024902 A CN 201410024902A CN 104795130 B CN104795130 B CN 104795130B
- Authority
- CN
- China
- Prior art keywords
- layer
- transparent
- conductive
- mesh layer
- conductive mesh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to conductive film technical field, specifically discloses a kind of transparent conductive film and preparation method thereof.The transparent conductive film of the present invention, which includes transparent substrates and the transparency conducting layer on the transparent substrates side, the transparency conducting layer, to be included：It is formed on the transparent colloidal layer of patterned groove；And the patterned conductive mesh layer in the groove of the transparent colloidal layer, the upper surface of wherein described transparent colloidal layer is higher than, is less than or is flush to the upper surface of the conductive mesh layer, and difference in height, in below 300nm, the surface roughness of the conductive mesh layer is 0.1 to 80nm.Compared with prior art, transparent conductive film of the invention has high surface smoothness, can meet the requirement to conducting film flatness such as OLED, OPV, LEC, printing photoelectric device.
Description
Technical field
The present invention relates to transparent conductive membrane material field, more particularly to it is a kind of suitable for the saturating of photoelectric device substrate and electrode
Bright conductive film, with and preparation method thereof.
Background technology
Nesa coating is widely used to field of photoelectric devices, wherein most classical transparent conductive membrane material is ITO
（Indium Tin Oxides, tin indium oxide）Glass.Ito glass sheet resistance is generally in 10 to 100 Ω/ or so, it is seen that light passes through
Rate about 90%, surface roughness, up within 5nm, are widely used as organic electroluminescence device through 2 polishings（OLED）, it is organic
Photovoltaic device（OPV）, transistor, light energy converter part（LEC）Deng the underlayer electrode of organic or inorganic photoelectric device.
But as above-mentioned photoelectric device technology develops towards flexibility direction, flexible ITO nesa coating can not meet
The technical need of flexible photoelectric device industry application.On the one hand, ITO anneals optimum temperature at 360 DEG C or so, because of flexible substrate not
High temperature can be born, flexible ITO annealing temperatures are only 140 DEG C or so, cause its sheet resistance to be up to 500 Ω/more than；On the other hand,
ITO is rigid film, crisp and frangible, easily cracked during bending, sheet resistance is further increased, device when for broad area device
Short life, and because internal resistance causes greatly efficiency low energy consumption high.Therefore, development substitutes ITO and can meet the flexible and transparent of device requirement
Conductive membrane technology is significant.
For above-mentioned photoelectric device, the technical need of flexible transparent conducting film is included：Sheet resistance is less than 100 Ω/, and to the greatest extent
It is possibly small；Visible light transmissivity>80%, and it is high as much as possible；Surface roughness is less than 100nm, and low as much as possible；Electrode
Matched in work function with device function layer, efficient injection of the electric charge from electrode can be achieved.
The nesa coating of existing two kinds of conductive metal materials：One kind is to be coated with metal nanometer line ink with being uniformly dispersed
On a flexible substrate, sintering obtains nesa coating；Another kind is that metal nanoparticle is made into ink, with silk screen, intaglio plate etc.
The method of traditional printing, conductive grid structure is formed on a transparent substrate, nesa coating is obtained after sintering.But these methods
Conductive layer is convex to be exposed to conducting film surface, the anti-scratch ability of anti-scratch.Although increase conductive layer thickness can reduce sheet resistance, can significantly drop
Its low translucency.I.e. electric conductivity mutually restricts with light transmittance.In addition, printing nanometer ink nesa coating technology is because by printing skill
The limitation of art, its grid line width is generally in more than 15um, and naked eyes are visible, it is difficult to meet high-resolution photoelectric device application need
Ask.
A kind of patterned transparent conduction membrane technology is disclosed in CN102222538：Silver nano-grain ink is filled in a groove
Water, conductive film thickness is less than gash depth after sintering, and step is up to more than 1um, and this structure is favorably improved the anti-scratch of touch screen
Ability.Such conducting film is well suited to touch screen, when there was only a hundred or so nanometer of photoelectric device for thickness, electric field easily occurs not
, the problem of shorted devices puncture, it can not meet that OLED, OPV, LEC, printing photoelectric device etc. are wanted to conducting film flatness
Ask.
It can be seen that, it is also necessary to a kind of transparent conductive film suitable for these photoelectric devices.
The content of the invention
It is contemplated that overcome the problem above and other problemses of prior art, there is provided one kind has high surfaces smooth
The transparent conductive film of degree, and preparation method thereof.
One aspect of the present invention provides a kind of transparent conductive film, including transparent substrates and on the transparent substrates side
Transparency conducting layer, the transparency conducting layer includes：It is formed on the transparent colloidal layer of patterned groove；And it is embedded in
Patterned conductive mesh layer in the groove of the transparent colloidal layer, wherein the upper surface of the transparent colloidal layer is in institute
The difference in height of the upper surface of conductive mesh layer is stated in below 300nm, the surface roughness of the conductive mesh layer for 0.1nm~
80nm。
In some embodiments, the line width of the conductive mesh layer is 500nm~8um；It is single in the conductive mesh layer to lead
The average perimeter of power grid is 100um~800um；The gross area of the conductive mesh layer is accounting for the conductive film area as 5%
~20%；The thickness of the conductive mesh layer is 1um~10um.
Can also have in some embodiments, in the conductive mesh layer and fill and lead up decorative layer, the material for filling and leading up decorative layer
Expect for conducting polymer.
In some embodiments, the visible light transmissivity of the transparent colloidal layer can be carved more than 90% by plasma
Erosion.
In some embodiments, the material of the conductive mesh layer can include silver, copper, conducting polymer, or their times
Meaning combination.
In some embodiments, the upper surface of the conductive mesh layer can also include CNT, graphene, and work content
Number>4.8eV metal, oxide, organic molecule, organic polymer, ion salt, or their any combination.
The present invention also provides a kind of method for being used to prepare the transparent conductive film of the present invention, including step：S1 is transparent
Impressing forms the transparent colloidal layer with trench network in substrate；S2 fills conductive material in the trench network, sinters shape
Into conductive mesh layer, wherein, the conductive material is the ink of the viscosity with 30%~90% solid content and 15cP~30000cP
Water or slurry.
Or another method of the transparent conductive film for preparing the present invention, step can be included：S1 is in transparent base
Impressing forms the transparent colloidal layer with trench network on bottom；S2 fills conductive material in the trench network, and sintering is formed
Conductive mesh layer；S3 planarizes the conductive mesh layer and the upper surface of the transparent colloidal layer, wherein, the planarizing includes
One or more of operation below：Optionally the transparent colloidal layer is thinned in plasma etching to S31, to the transparent colloid
The upper surface of layer is with the upper level difference of the conductive mesh layer in below 300nm；S32 is optionally in the conductive grid
Deposited metal layer on layer, to the upper level difference of the upper surface of the transparent colloidal layer and the conductive mesh layer in 300nm
Below；S33 is coated with the conductive mesh layer and fills and leads up decorative layer；S34 polishings polish the conductive mesh layer upper surface.
In some embodiments, the deposition in step S32 can include electroplating deposition and/or electroless deposition.
In some embodiments, the conductive material can also be with 30%~90% solid content and 15cP~30000cP
Viscosity ink or slurry.
Compared with the conductive film of prior art, transparent conductive film of the invention has good surface smoothness, can
To meet the requirement of OLED, OPV, LEC, printing photoelectric device etc..Can be by adjusting conductive grid in transparency conducting layer respectively
With the thickness of the dutycycle of transparent colloidal layer, and conductive mesh layer, realize each independent to both film translucency and impedance
Regulation.Conductive mesh layer is embedded in transparent colloidal layer, greatly improves the anti-scratch ability of anti-scratch of film.
Brief description of the drawings
Fig. 1 schematic illustrations according to the present invention transparent conductive film structure.
Fig. 2 schematic illustrations according to the present invention transparent conductive film conductive layer plane.
Fig. 3 A and Fig. 3 B distinguish cross-section structure of the schematic illustration through conductive film before and after plasma etching.
Fig. 4 schematic illustrations are polished polish after transparent conductive film cross-section structure.
Reference：11 transparent substrates；12 transparency conducting layers；21 transparent colloidal layers；22 conductive mesh layers；D mesh widths；
L grid girths；H1 depths of groove；The shoulder height that the sintering after-contraction of h2 conductive materials is formed；Transparent colloidal layer is thinned in h3 etchings
Afterwards with the difference in height of conductive mesh layer upper surface；H conductive mesh layer thickness.
Embodiment
The present invention discloses a kind of transparent conductive film for being used for photoelectric device substrate and electrode, and its structure is as shown in figure 1, certainly
It is upper down to include transparent substrates 11, and the transparency conducting layer 12 on the side of transparent substrates 11.Transparency conducting layer 12 includes saturating
Bright gelatinous layer 21 and conductive mesh layer 22, transparent colloidal layer 21 are provided with patterned groove, and conductive mesh layer 22 is embedded in transparent
In the groove of gelatinous layer 21, patterned conductive mesh layer 22 is formed.
The transparent conductive film of the present invention has higher surface smoothness, embodies both ways：（1）Transparent colloid
Difference in height between 21 upper surface of layer and the upper surface of conductive mesh layer 22 is less than or equal to 300nm；（2）Conductive mesh layer 22
Surface roughness is between 0.1nm~80nm.Wherein the upper surface of transparent colloidal layer 21 can slightly above, slightly below, Huo Zheqi
Put down in the upper surface of conductive mesh layer 22.
The transparent conductive film of the present invention significantly increases the anti-scratch ability of anti-scratch because of its embedded structure；High surfacing
Degree also allows it to meet the needs of photoelectric device.This is to be different from one of existing nesa coating innovation point.
In the conductive mesh layer of the present invention, conductive grid structure can be periodic structure, quasi periodic structures, or be equal
The polygon composite figure of even distribution.Wherein, conductive grid line width can be 500nm~8um；Single conductive grid or polygon
Average perimeter can be 100um~800um.
Such as in order to improve translucency, the line width of conductive grid, or the girth of the single grid of increase can be reduced；Otherwise also
So.In this way, by adjusting the line width of conductive grid, girth, area, to adjust conductive grid and transparent colloid in transparency conducting layer
Layer dutycycle, make the gross area shared by embedded conductive grid be conductive membrane area 5%~20%, and then adjust electrically conducting transparent it is thin
The light transmittance of film reaches 80%~95%.
The impedance of the transparent conductive film of the present invention is adjusted by the thickness of conductive mesh layer.Conductive mesh layer
Thickness it is bigger, the square resistance of film is smaller；Vice versa.In the transparent conductive film of the present invention, the thickness of conductive mesh layer
Degree can be adjusted between 1um~10um.Take this, substitute ITO to lead in for photoelectric devices such as OLED, OPV, LEC, transistors
During electric substrate, the sheet resistance of film can be achieved in the range of 0.1 Ω/~100 Ω/.
High light transmittance and low areal resistance are had according to the transparent conductive film of the present invention.The minimum reachable 0.1 Ω/ of sheet resistance；
During in combination with the high substrate of transparency, light transmission rate can be more than 92%.This is for the photoelectric devices such as OLED, particularly large area
For device, device inside field uniformity can be effectively improved, and reduces internal resistance energy consumption.In addition translucency and square resistance are only
It is vertical adjustable, be advantageous to design conductive film parameter by different demands, reduce the cost of raw material of conductive film.This is of the invention
The another innovative point of transparent conductive film compared with prior art.
Transparent colloidal layer can be the colloidal materials formed after liquid curing, and its visible light transmissivity is more than 90%.Example
Such as, it can be thermoplastic polyester, photo-curable polymer, heat curing copolymer, AB glue polymer etc..Some realities
Apply in example, transparent colloidal layer can also be by plasma etching.
The material main component of conductive mesh layer can be one kind in silver, copper, conducting polymer, or their group
Close.In addition, in order to further improve the injection of the electric charge of device, can also be mixed with CNT, stone in the material of conductive mesh layer
Black alkene and high work function（Such as it is higher than the work function of silver, i.e.,>4.8eV）Material（It is such as metal, oxide, organic small point
Son, organic polymer, ion salt etc.）, or combinations thereof.
Conductive mesh layer can be by the way that by conductive ink or filled therewith groove, after blade coating, sintering forms.Preferably,
The high ink of solid content height, viscosity or slurry can be used to be scratched, to reduce shrinkage ratio.Such as ink or consolidating for slurry contain
Amount can be 30%~90%, and viscosity can be 15cP~30000cP.Preferably, solid content can be more than or equal to 50%, and viscosity can
With in more than 350cP.For example, the conductive ink or slurry that solid content is 75%, viscosity is 850cP can be used.Usually, it is higher
Solid content also implies that higher viscosity, and less filling shrinkage ratio simultaneously, and obtained conductive mesh layer filling effect is more
Densification, electric conductivity is more preferably.It will also be appreciated that depending on the specific conductive ink or paste composition that use, there is identical solid content
Ink or slurry, its viscosity may also have bigger difference.
In the transparent conductive film of the present invention, using rich malleable metal, or flexible high high conductivity polymer conduct
Conductive grid layer material.Its pliability is good, high with flexible photoelectric device compatibility；Fill high, viscous using solid content during conductive layer
High ink slurry is spent to scratch, and reduces shrinkage ratio；In addition, high work function material composition is mixed in ink slurry, can be with
Improve electric charge injection problem.This is the another innovative point of the transparent conductive film of the present invention compared with prior art.
Another aspect of the present invention is related to the preparation method of the transparent conductive film.
First, impressing forms the transparent colloidal layer with trench network on a transparent substrate.Specifically, mould can be passed through
Method for stamping, form the transparent colloidal layer with graphical network groove.It is for example, saturating before first coating solidifies on a transparent substrate
Gelatin material；Impression formboard with figure is closely ridden on transparent adhesive tape plasma membrane；Solidify transparent colloidal layer；Pressure is peeled off again
Stamp version, make to form grid groove in transparent colloidal layer.It can be realized by the depth of embossed grooves on impression formboard to leading
The control of electric network thickness degree.
Afterwards, conductive material is filled in the trench network, such as conductive ink or slurry, sintered so that conductive material is received
Contracting is in the groove of transparent colloidal layer, so as to form conductive mesh layer.
In the preferred embodiments of the present invention, conductive material selects high solids content, highly viscous ink or filled therewith groove,
To reduce its shrinkage ratio, reduce transparent colloidal layer and the shoulder height of conductive mesh layer upper surface is poor.As described above, conductive ink
The solid content of water or slurry can be 30%~90%, and viscosity can be 15cP~30000cP.Preferably, solid content can be more than
Equal to 50%, viscosity can be in more than 350cP.It is, for example, possible to use solid content is 75%, viscosity is 850cP conductive ink or
Slurry.
Or, by surface flattening operating procedure, transparent conductive film can be improved after the formation of conductive mesh network layers
The flatness of upper surface, reduces conductive mesh layer and the shoulder height of transparent colloidal layer upper surface is poor.It is surface flattening to have
Several approach below：
The first is plasma etching reduction.That is, optionally the transparent colloidal layer is thinned in plasma etching, until
The upper surface of transparent colloidal layer and upper level subtractive as low as below the 300nm of conductive mesh layer.The transparent adhesive tape now selected
Matter layer should can be by plasma etching.For example, can be with plasma selective etching transparent colloidal layer, until neat with conductive grid upper surface
It is flat or lower slightly.
Second of approach is deposited metal method.That is, the optionally deposited metal layer in conductive mesh layer, until transparent adhesive tape
The upper surface of matter layer and upper level subtractive as low as below the 300nm of conductive mesh layer.Deposition process can be plating or change
Plating is learned, metal, the height of lifting conductive mesh layer are plated in conductive mesh layer by selectivity, until being flushed with transparent colloidal layer
It is or slightly higher.
The third approach is to fill and lead up modification method.That is, can be in conduction when needing further planarizing conductive layer surface
Decorative layer is filled and led up in coating on clathrum, to fill and lead up because of shoulder height caused by conductive mesh layer sintering shrinkage.Fill and lead up decorative layer
Material can be conducting polymer, such as PEDOT：PSS.In addition, note of the electric charge on interface can also be improved by filling and leading up dressing agent
Enter.
4th kind of approach is that polishing polishes method.That is, polishing polishes the conductive mesh layer upper surface.
It should be understood that several surface flattening approach can also be applied in combination above.It is such as first saturating with plasma selective etching
Bright gelatinous layer, until with conductive grid upper surface flush or lower slightly, re-polishing polishes conductive layer surface.Or first pass through plating or
The chemical plating optionally deposited metal in conductive mesh layer, until being flushed with transparent colloidal layer or slightly higher, re-polishing, which polishes, to be led
Electric layer surface.
It will also be appreciated that in the preparation method by surface flattening raising flatness or use Gao Gu as above
Content, high viscosity conductive ink or slurry.However, when preparation method includes planarization step（Such as above conductive mesh layer
When also electroplating, the metal of electroless deposition, or filling and leading up decorative layer）, the conductive mesh layer of filling can be slightly thin, conduction used
The solid content and viscosity of ink or slurry can also be slightly lower.Such as can use with 30%~50% solid content and 15cP~
The ink or slurry of 800cP viscosity.
The transparent conductive film of the present invention serves not only as transparent conductive film, is also used as the transparent of photoelectric device
Conductive electrode portion.
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is described in further detail.It should be understood that although transparent base in embodiment
Flexible material, such as PEN have been selected in bottom；The transparent conductive film of the present invention can also use rigid material
As transparent substrates, so as to which transparent conductive film of the invention can be flexible or rigid film, and be applied to flexible device
Both with rigid device.
The transparent conductive film of embodiment 1
1st, structure
As shown in figure 1, it is PEN including transparent substrates 11（PEN）, thickness 125um, it is seen that light is saturating
Rate 94% is crossed, wherein substrate is equally that can be selected from PET, PC, PMMA and glass；Transparent colloidal layer in transparency conducting layer 12
21 be solvent-free UV solidified imprintings glue（Its main component is acryl resin）；Conductive mesh layer 22 is hexagonal structure（Such as Fig. 2
It is shown）, its main component is silver.
Conductive mesh layer thickness h is 2.5um；Conductive grid line width d is 2um；The girth l of grid hexagon is respectively
100um、600um、800um；The light transmission rate of transparent conductive film is respectively 70%, 88%, 91%；Sheet resistance is respectively 0.8 Ω/,
1.2 Ω/, 38 Ω/.
2nd, preparation method
Liquid UV solidified imprinting glue is coated with transparent substrates PEN, in 365nm ultraviolet lights after being pressurizeed with impression formboard fitting
Lower solidification, form transparent colloidal layer.Impression formboard is peeled off, hexagonal mesh groove, depth of groove h1 are formed on transparent colloidal layer
For 4.2um, width d is 2um, as shown in fig. 2 and fig. 3 a.
Silver nano-grain slurry is filled in a groove, and the silver paste on most top layer is shaved noresidue, is formed in 150 DEG C of sintering
Conductive mesh layer.Nesa coating is conductive, and sheet resistance is 0.5 Ω/.Wherein transparent colloidal layer upper surface is than conductive mesh layer upper table
Face is slightly higher, and difference in height h2 is 1.4um, as shown in Figure 3A.
Use plasma degumming machine（Power 600W）In O2Etched under atmosphere and transparent colloidal layer is thinned 40 seconds, until conductive grid
Layer upper surface is slightly above transparent colloidal layer upper surface, and difference in height h3 is 0.3um, as shown in Figure 3 B.
Further polishing polishes the conductive grid of protrusion, and conductive mesh layer is reduced to 0 with transparent colloidal layer shoulder height, conduction
The roughness Rz on clathrum Ag surfaces drops to less than 20nm from the 108nm before polishing.As shown in Figure 4.
3rd, apply
（1）The transparent conductive film of hexagon Zhou Changwei 600um in the embodiment is used as electrode, prepares OLED.
Device architecture is：Transparent conductive film/PEDOT：PSS/m-MTDATA/TAPC/CBP：Ir(PPy)3/TPBi/
LiQ/Al conventional OLED devices.After testing, its luminous efficiency reaches 32.5cd/A.The identical structure devices efficiency of ITO substrates is on year-on-year basis
30cd/A。
（2）The transparent conductive film of hexagon Zhou Changwei 600um in the embodiment is used as electrode, prepares organic solar
Battery.
Battery structure is transparent conductive film/ZnO/PCBM:P3HT/Al, active area 1.6cm2.After testing, device
Photoelectric transformation efficiency is 3.02%.Year-on-year ITO identity unit efficiency is only 1.2%.
Influence of the electrically conducting transparent film flatness of embodiment 2 to photoelectric device
Transparent conductive film is prepared using the method for embodiment 1.
Depth of groove 3.2um, width 2um, Ag inks are scraped to fill in a groove, sinter.The line on conductive mesh layer Ag surfaces is thick
Rugosity Rz is 107nm, and conductive mesh layer Ag surfaces are less than UV glue upper surface, shoulder height 1.1um.Test obtains sheet resistance as 2
Ω/□。
（1）In conductive film upper surface spin coating PEDOT：PSS layer planarizes.OPV devices are prepared with it：Device can be with work
Make, but stability is poor, and device efficiency fluctuation is big；OLED is prepared with it, device can measure i-v curve, but can not send out
Light.
（2）UV glue is thinned with plasma degumming machine to the conductive film, after shoulder height drops to 500nm, spin coating
PEDOT：PSS layer backward step is 300nm, prepares OPV devices.Device can work, and stability increases substantially, and device efficiency is steady
Determine and be higher than ITO devices.Show that 300nm step has met OPV application demand.OLED is prepared with it, can be lighted,
But easily breakdown, luminous efficiency are relatively low.
（3）It is ± 100nm, spin coating PEDOT the conductive film further to be removed photoresist to step：PSS layer, prepare OLED devices
Part.Device is luminous normal, and maximum brightness is up to 6500cd/m2, but stability is poor, and efficiency fluctuation is big.
（4）On the basis of step is ± 100nm transparent conductive films, polishing polishes conductive mesh layer, makes conductive mesh layer
13nm is reduced to transparent colloidal layer shoulder height difference, the roughness Rz on conductive mesh layer Ag surfaces is more than 100nm from before polishing
Drop to about 25nm, spin coating PEDOT：PSS layer, prepare OLED.Device brightness maximum can arrive 15000cd/A, and efficiency reaches
32cd/A and stably.It can be seen that OLED application demand is substantially met.
Accurate control is removed photoresist with can further improve conducting film flatness using high-precision polishing grinding, so as to more favourable
In OLED efficiency and stability.
The embodiment of present invention described above, is not intended to limit the scope of the present invention..Any basis
The various other corresponding changes and deformation that the technical concept of the present invention is made, should be included in the guarantor of the claims in the present invention
In the range of shield.
Claims (9)
1. a kind of flexible transparent conductive film, it is characterised in that including flexible and transparent substrate and located at the flexible and transparent substrate
Transparency conducting layer on side, the transparency conducting layer include：
It is formed on the transparent colloidal layer of patterned groove；And
Patterned conductive mesh layer in the groove of the transparent colloidal layer, wherein
The upper surface of the transparent colloidal layer is higher than, is less than or is flush to the upper surface of the conductive mesh layer, and difference in height
In below 300nm,
The surface roughness of the conductive mesh layer is 0.1 to 80nm；
The line width of the conductive mesh layer is in 500nm to adjustable between 8um；
In the conductive mesh layer average perimeter of single conductive grid in 100um to adjustable between 800um；
The gross area of the conductive mesh layer is adjustable between the 5% to 20% of the conductive film area is accounted for；
The thickness of the conductive mesh layer is in 1um to adjustable between 10um.
2. flexible transparent conductive film as claimed in claim 1, wherein, it is accompanied by filling and leading up modification in the conductive mesh layer
Layer, the material for filling and leading up decorative layer is conducting polymer.
3. flexible transparent conductive film as claimed in claim 1, wherein, the visible light transmissivity of the transparent colloidal layer exists
More than 90%, and can be by plasma etching.
4. flexible transparent conductive film as claimed in claim 1, wherein, the material of the conductive mesh layer includes silver, copper, led
Electric macromolecule or their any combination.
5. flexible transparent conductive film as claimed in claim 4, wherein, also received in the material of the conductive mesh layer including carbon
Mitron, graphene, work function>4.8eV metal, oxide, organic molecule, ion salt or their any combination.
6. a kind of method for being used to prepare the flexible transparent conductive film any one of claim 1 to 5, its feature exist
In, including step：
S1 is imprinted in flexible and transparent substrate forms the transparent colloidal layer with trench network；
S2 fills conductive material in the trench network, and sintering forms conductive mesh layer,
Wherein, the conductive material is ink or slurry with 30% to 90% solid content and 15 to 30000cP viscosity.
7. a kind of method for being used to prepare the flexible transparent conductive film any one of claim 1 to 5, its feature exist
In, including step：
S1 is imprinted in flexible and transparent substrate forms the transparent colloidal layer with trench network；
S2 fills conductive material in the trench network, and sintering forms conductive mesh layer；
S3 planarizes the conductive mesh layer and the upper surface of the transparent colloidal layer,
Wherein, the planarizing includes one or more of following operation：
Optionally the transparent colloidal layer is thinned in plasma etching to S31, is led to the upper surface of the transparent colloidal layer with described
The upper level difference of mesh layer is in below 300nm；
S32 optionally with described lead by the deposited metal layer in the conductive mesh layer, the upper surface of the extremely transparent colloidal layer
The upper level difference of mesh layer is in below 300nm；
S33 is coated with the conductive mesh layer and fills and leads up decorative layer；
S34 polishings polish the conductive mesh layer upper surface.
8. method as claimed in claim 7, wherein, the deposition in step S32 includes electroplating deposition and/or electroless deposition.
9. method as claimed in claim 7, wherein, the conductive material be with 30% to 90% solid content and 15 to
The ink or slurry of 30000cP viscosity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410024902.9A CN104795130B (en) | 2014-01-20 | 2014-01-20 | Transparent conductive film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410024902.9A CN104795130B (en) | 2014-01-20 | 2014-01-20 | Transparent conductive film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104795130A CN104795130A (en) | 2015-07-22 |
| CN104795130B true CN104795130B (en) | 2017-12-05 |
Family
ID=53559880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410024902.9A Active CN104795130B (en) | 2014-01-20 | 2014-01-20 | Transparent conductive film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104795130B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106710669B (en) * | 2015-07-23 | 2018-09-04 | 北京华纳高科科技有限公司 | One kind can flexing metal grill method for preparing transparent conductive film and its product |
| CN105152124A (en) * | 2015-08-04 | 2015-12-16 | 上海交通大学 | Method for storing CNTs (Carbon Nanotubes) by using deep silicon etching technology |
| CN105374467B (en) * | 2015-10-23 | 2017-03-22 | 苏州大学 | Nanometer transfer method and nanometer functional device |
| CN106611627A (en) * | 2015-10-23 | 2017-05-03 | 苏州汉纳材料科技有限公司 | High-quality carbon nanotube transparent conductive film, preparation method thereof and applications |
| CN105898987B (en) * | 2016-06-17 | 2019-03-29 | 上海交通大学 | A kind of nanoscale flexible and transparent circuit and its preparation process |
| CN111354508B (en) * | 2016-07-15 | 2022-08-19 | 昇印光电（昆山）股份有限公司 | Flexible electrode film and application |
| CN106315505B (en) * | 2016-08-24 | 2018-11-06 | 深圳先进技术研究院 | A method of the adhesion strength between enhancing polyimide substrate and conductive metal layer |
| CN106782774A (en) * | 2017-01-10 | 2017-05-31 | 京东方科技集团股份有限公司 | Transparent conductive film, its preparation method and device |
| CN107359212A (en) * | 2017-05-26 | 2017-11-17 | 中国华能集团清洁能源技术研究院有限公司 | Electrically conducting transparent substrate, its preparation method and solar cell |
| CN110136864B (en) * | 2018-02-09 | 2021-08-31 | 昇印光电（昆山）股份有限公司 | Transparent conductive film |
| CN110473655B (en) * | 2018-05-10 | 2021-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conductive film and preparation method thereof |
| CN110602810A (en) * | 2018-06-13 | 2019-12-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent electric heating film and manufacturing method thereof, electric heating glass and manufacturing method thereof |
| CN109922645B (en) * | 2019-03-06 | 2024-04-05 | 苏州蓝沛光电科技有限公司 | Transparent electromagnetic shielding film structure and preparation method thereof |
| CN113936844B (en) * | 2020-07-13 | 2023-02-03 | 华为技术有限公司 | Transparent conductive electrode, preparation method thereof and electronic device |
| CN114709278B (en) * | 2022-06-06 | 2022-08-23 | 一道新能源科技(衢州)有限公司 | Method for preparing crystalline silicon solar cell electrode by laser melting |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN103238128A (en) * | 2010-12-02 | 2013-08-07 | 日东电工株式会社 | Transparent conductive film and touch panel |
| CN103489504A (en) * | 2013-09-27 | 2014-01-01 | 汕头超声显示器（二厂）有限公司 | Low reflective conductive layer and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4068993B2 (en) * | 2003-02-26 | 2008-03-26 | 帝人デュポンフィルム株式会社 | Transparent conductive laminated film |
-
2014
- 2014-01-20 CN CN201410024902.9A patent/CN104795130B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN103238128A (en) * | 2010-12-02 | 2013-08-07 | 日东电工株式会社 | Transparent conductive film and touch panel |
| CN103489504A (en) * | 2013-09-27 | 2014-01-01 | 汕头超声显示器（二厂）有限公司 | Low reflective conductive layer and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104795130A (en) | 2015-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104795130B (en) | Transparent conductive film and preparation method thereof | |
| US9860993B2 (en) | Grid and nanostructure transparent conductor for low sheet resistance applications | |
| CN103456390B (en) | Conducting film and manufacture method thereof | |
| Joo et al. | A highly reliable copper nanowire/nanoparticle ink pattern with high conductivity on flexible substrate prepared via a flash light-sintering technique | |
| CN102222538B (en) | Graphical flexible transparent conductive film and preparation method thereof | |
| CN106448825B (en) | A kind of preparation method of graphical fine conductive film | |
| CN102308366A (en) | Touchscreen and method for manufacturing the same | |
| CN105448423A (en) | Conducting film manufacturing method, touch control panel manufacturing method, and touch control panel | |
| CN103123564A (en) | Capacitive touch screen and manufacturing method thereof | |
| US20140322436A1 (en) | Making multi-layer micro-wire structure | |
| CN104009124A (en) | Solar cell superfine electrode transferring thin film, preparing method and application method of solar cell superfine electrode transferring thin film | |
| CN110473655A (en) | A kind of transparent conductive film and preparation method thereof | |
| CN112927862B (en) | High-performance large-area flexible transparent electrode and preparation method and application thereof | |
| CN105489784B (en) | Electrode and its application prepared by the preparation method and this method of compliant conductive electrode | |
| CN105204695A (en) | Nanometer silver line conductive overlapping structure and capacitive touch panel | |
| CN106384745A (en) | Method for manufacturing display substrate | |
| US8865292B2 (en) | Micro-channel structure for micro-wires | |
| CN113066604A (en) | Conductive film and preparation method thereof | |
| KR20120078875A (en) | Preparation method of front electrode for solar cell and front electrode manufactured by the same | |
| US9426885B2 (en) | Multi-layer micro-wire structure | |
| CN111666003A (en) | Ultrathin flexible touch display screen | |
| WO2009005240A3 (en) | Pad for capacitance type touch panel and method of preparing touch panel using the same | |
| US9296013B2 (en) | Making multi-layer micro-wire structure | |
| US9282647B2 (en) | Method of making micro-channel structure for micro-wires | |
| CN111665974A (en) | Flexible touch display screen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |