CN102880369B - A kind of monolithic capacitive touch screen and preparation method thereof - Google Patents
A kind of monolithic capacitive touch screen and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of monolithic capacitive touch screen and preparation method thereof.Described monolithic capacitive touch screen includes: single substrate (1), non-form ink area (2), window touch area (3) and lead district (4)；Wherein, the upper surrounding of described single substrate (1) arranges non-form ink area (2), and described non-form ink area (2), around forming window touch area (3), arranges lead district (4) on described non-form ink area (2)；Wherein, the electrode material of described window touch area (3) is transparent graphene conductive film.The preparation method of touch screen of the present invention is conducive to strengthening the making of glass, and the intensity that improve strengthening glass maintains ability and stability, can significantly improve photopermeability and the impedance uniformity of Touch Zone sensing electrode simultaneously；Avoiding gold-tinted processing procedure, add reactive ion etching only with laser direct-writing etching or metal mask, processing technology is convenient and swift, efficient.
Description
Technical field
The present invention relates to a kind of monolithic capacitive touch screen, be specifically related to a kind of monolithic based on graphene film
Formula capacitance touch screen, further to a kind of one chip with transparent graphene conductive film as electrode material electricity
Hold touch screen and preparation method thereof, belong to touch screen technology field.
Background technology
Touch screen is a kind of input equipment, it is possible to conveniently realize people and computer and other portable mobile apparatus
Reciprocal action.In recent years, capacitance touch screen based on tin indium oxide (ITO) transparent conductive film is by extensively
It is applied to mobile interchange equipment, such as smart mobile phone, Portable tablet personal computer.
Along with the requirement of the aspect such as screen reflecting rate, light transmittance and thickness is frivolous is more come by mobile interchange equipment
The highest, conventionally employed biplate glass (high rigidity glass cover-plate and the glass of band sensing electrode) laminating
Capacitance touch screen has been difficult to meet requirement.A kind of be referred to as OGS(One Glass Solution) one chip
Capacitance touch screen scheme is suggested and popularization and application, becomes the important directions of a new generation's touch screen.The program exists
The high rigidity protection glass cover-plate back side, directly forms conduction and sensing electrode, simultaneously works as with same glass
Touch protection and the dual function of touch-control sensing.
But, OGS touch screen based on transparent conductive film, preparation technology includes glass hardening, ITO
Plated film, black film, gold-tinted etching, metal coating, wet etching and special-shaped cutting etc., the most last
Special-shaped cutting technique, produces yield low, causes whole production cost the highest.Solve the low yield of special-shaped cutting
The problem causing the increase of production cost, the most direct way is that " special-shaped cutting " step is placed on " glass
Hardening " after step, before " ITO plated film " step, but the glass cover-plate after abnormal shape is cut, chi
Very little less, should not match with large-sized ITO gold-tinted technique.Therefore, existing based on transparent conduction
The technique of thin film be difficult to solve production cost problem, maintain cover plate mechanical strength with reduce production cost it
Between constitute contradiction.
Summary of the invention
For the deficiency of existing OGS touch screen technology, an object of the present invention is to provide a kind of based on stone
The condenser type OGS touch screen of ink alkene thin film, described touch screen device includes: single substrate 1, non-form oil
Ink-covered area 2, window touch area 3 and lead district 4；
Wherein, on described single substrate 1, surrounding arranges non-form ink area 2, described non-form ink area 2 ring
Around forming window touch area 3, described non-form ink area 2 arranges lead district 4；Wherein, described form
The electrode material of Touch Zone 3 is transparent graphene conductive film.
Described " on single substrate 1, surrounding arranges non-form ink area 2 ", refers in single substrate 1 one side
Edge arranges the non-form ink area 2 of one fixed width, and this design is as well known to those skilled in the art, specifically may be used
To see the schematic appearance that accompanying drawing 1(Fig. 1 is capacitive touch screen of the present invention).
Lead district of the present invention is the routing region of wire between the Graphene electrodes of Touch Zone and controller,
It is positioned at above black oil ink-covered area, near side, viewfinder area, i.e. lead district area less than ink area area.
The form touch control electrode district of monolithic capacitive touch screen of the present invention selects graphene conductive film,
Instead of conventional oxidation indium stannum (ITO) conductive film, thus obtained one have lower cost, higher can
Condenser type OGS touch screen by property.
Using graphene film as the electrode material of Touch Zone, the Graphene electrodes material of Touch Zone is by turning
Shifting mode is formed on substrate, can avoid due to protection glass profile mechanism by asking of being limited of profile
Topic, and solve the appearance such as protection glass secondary hardening processing procedure and ITO coated film deposition process annealing mutually restriction
Situation, improve Touch Zone sensing electrode surface resistance uniformity, it is ensured that protection glass intensity with
Quality stability, thus also improve the yield of production process.
Preferably, the electrode material of lead district 4 of the present invention is Graphene electrodes or ag paste electrode, preferably
For Graphene electrodes.Graphene electrodes of the present invention is transparent graphene conductive film.
Preferably, the atom number of plies of described transparent graphene conductive film is 1-10 layer, such as 1 layer, 2 layers,
3 layers, 4 layers, 5 layers, 6 layers, 7 layers, 8 layers, 9 layers, 10 layers etc., it is seen that optical transmittance >=85% of light,
Such as 85.4%, 86.3%, 88.6%, 90.47%, 92%, 94.1% etc..Transparent graphene conductive film
Visible light optical transmitance (i.e. light transmission) is the best, and the visuality of touch screen is the best, and the atom number of plies is too many
Affect the optical transmittance of its visible ray.
The width of non-form ink area 2 of the present invention, the width of lead district 4, those skilled in the art can
To select according to practical situation (such as product size etc.), the present invention is not specifically limited.
Preferably, described single substrate 1 is transparency carrier, preferably glass plate.
The two of the purpose of the present invention are to provide the preparation method of a kind of described monolithic capacitive touch screen.
As the first embodiment of the two of the object of the invention, a kind of one chip capacitive touch of the present invention
The preparation method touching screen comprises the steps:
(1) edge on single substrate forms non-form ink area 2, and non-form ink area 2 surrounds
Window touch area 3；
(2) transfer Graphene is on single substrate 1, covers whole window touch area 3 and non-form ink area
2；
(3) Graphene of window touch area 3 and non-form ink area 2 is patterned；
(4) patch controller chip.
In this embodiment, Graphene is transferred on substrate 1 by step (2), covers form touch-control simultaneously
District 3 and non-window touch area 2, pattern the Graphene covered subsequently, thus can concurrently form
The electrode pattern of Touch Zone and form lead district on non-window touch area 2.It is to say, work as the present invention
When the electrode of described lead district 4 is Graphene, the electrode pattern of its lead district 4 and the electricity of window touch area 3
Pole pattern is identical, and both complete in same one procedure simultaneously.This kind of embodiment simplifies production technology,
Reduce production cost simultaneously.
As the second embodiment of the two of the object of the invention, a kind of one chip capacitive touch of the present invention
The preparation method touching screen comprises the steps:
(1) edge on single substrate forms non-form ink area 2, and non-form ink area 2 surrounds
Window touch area 3；
(2) transfer Graphene is on single substrate 1, covers whole window touch area 3；
(3) Graphene of window touch area 3 is patterned；
(3 ') make lead-in wire electrode on non-form ink area 2 and pattern, and form lead district 4；
(4) patch controller chip.
Or, step (2), step (3), the order of step (3 ') are adjusted, i.e. in step (1)
And carry out step (3 ') between step (2), say, that a kind of monolithic capacitive touch screen of the present invention
Preparation method comprise the steps:
(1) edge on single substrate forms non-form ink area 2, and non-form ink area 2 surrounds
Window touch area 3；
(3 ') make lead-in wire electrode on non-form ink area 2 and pattern, and form lead district 4；
(2) transfer Graphene is on single substrate 1, covers whole window touch area 3；
(3) Graphene of window touch area 3 is patterned；
(4) patch controller chip.
Compared with the first embodiment, the difference of the second embodiment is: by the formation of lead district 4
Process makes respectively with the forming process of window touch area 3, i.e. the first embodiment is by Graphene simultaneously
Cover non-form ink area 2 and window touch area 3, then pattern, concurrently form lead district 4 and regard
Window Touch Zone 3, it is emphasised that simultaneously, i.e. without being formed respectively.The first embodiment production technology is simple,
Production cost is low, but is only limitted to the situation that lead district 4 is identical with the electrode material of window touch area 3, i.e.
The electrode material being only limitted to both is the situation of Graphene.And the second embodiment is to be initially formed form to touch
The distribution of electrodes in control district 3, forms the distribution of electrodes (i.e. forming lead district 4) of non-form ink area 2 the most again.
Although the second embodiment relatively the first embodiment complex steps, but the choosing of the electrode material of lead district 4
Select the electrode material being not limited to window touch area 3, the i.e. range of choice of the electrode material of lead district 4 than
In a kind of embodiment width, prior art that any those skilled in the art can be known or new technique public
The electrode material that can be used in lead of touch screen district opened all can use and the present invention, lead district 4 the most of the present invention
Electrode material be Graphene electrodes or ag paste electrode.
And in the second embodiment of the present invention, the step of " formed lead district 4 " (i.e. step 3 ')
(i.e. step 2 and step 3) is not specified by sequencing to the step " forming window touch area 3 ", permissible
First " form lead district 4 " the most again " forming window touch area 3 ", the most described monolithic capacitive touch screen
Preparation method includes step (1)-(3 ')-(2)-(3)-(4) successively；Can also first " form form to touch
Control district 3 " " form lead district 4 " the most again, the preparation method of the most described monolithic capacitive touch screen is wrapped successively
Include step (1)-(2)-(3)-(3 ')-(4).Specifically select which kind of operation order, art technology
Professional knowledge and practical situation that personnel can grasp according to oneself select.
Typical but non-limiting example has: when described lead-in wire electrode 4 is for ag paste electrode, due to silver slurry electricity
The silk-screen printing process of pole easily causes the damage of the graphite electrode of window touch area 3, thus affects touch screen
Using effect, therefore when described lead-in wire electrode 4 is ag paste electrode, preferably first " forms lead district 4 " then
" form window touch area 3 " again, thus when reaching to avoid silk-screen ag paste electrode, damage the Graphene formed
The purpose of electrode.
When described lead-in wire electrode 4 is Graphene electrodes, it is preferred to use the first embodiment is carried out, i.e. same
Time the electrode of lead district 4 and window touch area 3 is formed.
As optimal technical scheme, the thickness of the ink of the described non-form ink area 2 of step of the present invention (1)≤
10 μm, such as 9.5 μm, 8.9 μm, 8.3 μm, 7.7 μm, 7.5 μm, 7.1 μm, 6.6 μm etc..
Silk screen printing belongs to porous printing, and it is collectively known as four big printing processes with flat stamping, convex print, gravure.
Silk screen printing is to stretch tight on screen frame by silk fabrics, synthetic fabrics or metal gauze, utilizes sensitive material to lead to
Cross photomechanical method make screen printing forme (the silk screen hole making areas on screen printing forme is through hole, and
The silk screen hole of non-graphic part is plugged).By the extruding of scraper plate during printing, ink is made to pass through areas
Mesh is transferred on stock, forms the picture and text as original copy.The equipment of silk screen printing is simple, operation side
Just, print, make a plate simple and with low cost, strong adaptability.Processing and manufacturing process at capacitive touch screen
In, silk screen printing is mainly used in panel ink printing and the step such as electrode patterning.Silk screen printing is this area
Technology known to very, about the substance of silk screen printing, the present invention does not do concrete narration.
Preferably, the silk-screen printing technique that is formed by of the described non-form ink area (2) of step (1) completes.
It is further preferred that the described non-form ink area (2) of step (1) carries out silk screen printing by grenadine,
Then be baked to printing-ink thickness≤10 μm, such as 9.8 μm, 9.2 μm, 8.5 μm, 7.9 μm, 7.3 μm,
6.8 μm, 6.4 μm etc.；Described grenadine preferred 350-450 mesh, such as 351 mesh, 358 mesh, 375 mesh, 398
Mesh, 403 mesh, 425 mesh, 432 mesh, 446 mesh etc., further preferred 420 mesh.Step (1) described baking
Roasting temperature is 150-200 DEG C, such as 158 DEG C, 165 DEG C, 169 DEG C, 173 DEG C, 177 DEG C, 186 DEG C, 192
DEG C, 197 DEG C etc.；Described baking time is 20-30min, such as 21min, 24min, 26min, 29min
Deng.
During thickness≤10 μm of printing-ink, non-form ink area 2 can meet bright zone and ink area electrode
The reliability of conduction, and by black ink, protection glass is divided into window touch area 3 and non-form ink area 2,
Window touch area 3 is to realize the patterned Graphene membrane electrode of touch controllable function, and ink area is form touch-control
District's extraction electrode wire, makes window touch area electrode by graphene wire or conductive silver paste and controller chip
Connect, thus realize the purpose of Touch Zone function.
As optimal technical scheme, non-form ink area 2 of the present invention, use silk-screen printing technique successively
Printing two-layer black ink (being designated as BM1, BM2 respectively), first prints BM1, the most again at BM1 respectively
Upper printing BM2, and in printing process, the printing width of BM1 is wider than BM2, per pass ink passes through 420
Mesh grenadine carries out silk screen printing, toasts 20-30min, then guarantee printing-ink THICKNESS CONTROL under 180 DEG C of high temperature
Below 10 μm.The operational approach of " printing width of BM1 is wider than BM2 ", after baking, Ke Yishi
The now effect of slow transition from viewfinder area to ink area, is i.e. one " slope " from viewfinder area to ink area
Transient process, rather than steep step so that during covering viewfinder area and lead district Graphene electrodes not
As for occurring that Graphene ruptures.
Preferably, step of the present invention (2) described transparent graphene conductive film be the atom number of plies be 1-10 layer
Graphene, optical transmittance >=85% of the visible ray of described transparent graphene conductive film.
Preferably, step (2) described Graphene is transparent graphene conductive film.About Graphene preparation,
The aspects such as the preparation of large-size graphene film and the transfer of large-size graphene film, people in the art
Member has done certain research, and such as Yang Yong brightness uses oxidation-reduction method to be prepared for Graphene colloidal suspensions,
By vacuum filtration obtain graphene film (preparation of graphene film and structural characterization, Yang Yonghui etc.,
Acta PhySico-Chimica Sinica, 2011,27(3): 736-742)；Chu Ying etc. are in " graphene material and in electrochemistry
Application in capacitor " (graphene material and the application in electrochemical capacitor, Chu Ying etc., battery,
2009,8,39(4): 220-221) literary composition outlines Graphene and preparation method thereof: micromechanics stripping,
The reduction of graphite intercalation, graphite oxide and chemical gaseous phase deposition, review Graphene as electrode material to electrification
Learn capacitor performance, particularly than the impact of electric capacity；Appoint literary talent in " the chemical vapour deposition technique system of Graphene
Standby " (prepared by the chemical vapour deposition technique of Graphene, a literary talent, 2011,2,26(1): a 71-79) literary composition
Middle CVD of having commented prepares the progress of Graphene and transfer techniques thereof.Graphene of the present invention is saturating
The preparation method of bright conductive film is not particularly limited, it is possible to prepare Graphene electrically conducting transparent thin by described
Any one method of film is used equally to the present invention, preferably being selected from of preparation method of step (2) described Graphene
Learn any a kind in vapour deposition process, chemical dispersion method, heating SiC method, further preferred chemical gaseous phase
Sedimentation.
CN102220566A discloses a kind of method that chemical gaseous phase deposition prepares monolayer and multi-layer graphene, its
Step is metal substrate to be placed in vacuum tube furnace or vacuum atmosphere oven, oxygen in removing vacuum chamber
In the case of, hydrogen is injected in vacuum chamber, and is warming up to 800-1000 DEG C, then carbon-source gas is injected vacuum
In chamber, i.e. obtain depositing the metal substrate of Graphene.
Preferably, the preparation method of step (2) described Graphene is chemical vapour deposition technique (i.e. CVD),
The step of described method is cracking carbon source gas at 800-1200 DEG C, thin at substrate surface growth Graphene
Film.
In chemical vapour deposition technique of the present invention, described carbon source gas is for comprising only carbon atom and hydrogen atom
Organic gas, the alkane of preferably C1-4, the alkene of C2-4, C2-3 alkynes in any a kind or extremely
The combination of few 2 kinds, further preferred methane, ethane, ethylene, acetylene, propane, n-butene, isobutene.,
1,2-butadiene, 1,3-butadiene, suitable butadiene, anti-dibutene, normal butane, iso-butane, propylene, ring third
Any a kind or the combination of at least 2 kinds in alkane, described combination such as methane the combination of ethane, ethylene positive fourth
The combination of alkene, acetylene cyclopropane the combination etc. of methane, particularly preferred methane and/or acetylene.
In chemical vapour deposition technique of the present invention, described substrate is selected from metal forming or invests the metal on matrix
Thin film, in nickel, copper, rubidium, cobalt, palladium, platinum, iridium or ruthenium any a kind or at least 2 of described metal
The combination planted；The preferred Copper Foil of described substrate, nickel foil, rubidium paper tinsel, ruthenium paper tinsel or be coated with the matrix of metal nickel film
In any a kind or the combination of at least 2 kinds, further preferred Copper Foil.
As optimal technical scheme, the preparation method of step of the present invention (2) described Graphene is on 1000 DEG C of left sides
Under right high temperature, in tube furnace, crack the carbon-source gas such as methane, acetylene, form graphite in copper foil surface growth
Alkene.The graphene film of copper foil surface growth, covers single substrate surface by the transfer of Graphene and is formed
Window touch area electrode.
Preferably, the transfer method of step (2) described Graphene is selected from polymethyl methacrylate (PMMA)
In transfer method, heat release adhesive tape transfer method, polydimethylsiloxane (PDMS) transfer method any a kind,
Preferably polymethyl methacrylate transfer method.
" etched the matrix method " is the method for the most the more commonly used transfer Graphene, and the method uses poly-methyl
Acrylic acid methyl ester. (PMMA), polydimethylsiloxane (PDMS) etc. are as transfer medium, it is ensured that stone
The reliability and stability of ink alkene transfer, preferably save the integrity of Graphene.Typical case but non-limiting
Example be: use polymethyl methacrylate (PMMA) as transfer medium, the NaOH of 1mol/L
As corrosive liquid, corrosion temperature is 90 DEG C, being stained with the PMMA thin film of Graphene from original silicon base
After upper separation, paste it under room temperature in target substrate, finally utilize acetone to wash PMMA, it is achieved
The transfer of Graphene；Or the Ni matrix that the growth with PDMS has Graphene is put in corrosive liquid
(FeCl3Solution or acid solution), after etching, the PDMS sector-meeting with Graphene swims on liquid level,
After cleaning PDMS sheet with water, it is affixed in target substrate, stands and take PDMS again off after removing bubble removing,
Can transfer graphene in target substrate (prepared by the chemical vapour deposition technique of Graphene, appoint literary talent, and 2011,
2,26(1): 71-79).
Heat release adhesive tape is the transfer medium of a kind of applicable transfer large-area graphene, is characterized under room temperature tool
Having certain bonding force, more than specified temp, bonding force drastically declines and even disappears, and shows that " heat is released
Putting " characteristic ", the method can realize transfer (Bae S, the et al.Roll-to-roll of 30 inches of Graphenes
production of 30-inch grapheme films for transparent electrodes[J],Nature
Nanotechnology, 2010,5 (8): 574-578).
Those skilled in the art are it should be understood that can shift graphite disclosed in any prior art or new technique
The method of alkene is used equally to the present invention.As optimal technical scheme, step of the present invention (2) described Graphene
Transfer method is polymethyl methacrylate transfer method, and described method comprises the steps:
(I) Copper Foil of Graphene flattens by superficial growth；
(II) in the graphene growth face spin coating PMMA solution of step (I) described Copper Foil, naturally dry；
The preferred toluene of solvent of described PMMA solution and/or methyl phenyl ethers anisole；
(III) etching Copper Foil obtains Graphene/PMMA thin film；Described etching Copper Foil preferably at Ammonium persulfate. or
Ferric chloride solution is carried out；
(IV) Graphene/PMMA thin film is cleaned；
(V) Graphene/PMMA thin film is transferred on single substrate, dries；
(VI) the single substrate baking of Graphene/PMMA thin film will be displaced；Described baking temperature is preferably
120 ~ 160 DEG C, such as 122 DEG C, 129 DEG C, 136 DEG C, 145 DEG C, 152 DEG C, 158 DEG C etc., baking time is excellent
Elect 15 ~ 30min as, such as 15.2min, 16min, 17.2min, 18.6min, 19min, 19.7min etc.；
(VII), after the single substrate after baking being cooled to room temperature, it is placed in the solution such as acetone or dichloromethane
Soak 15 ~ 30min, such as 15.3min, 16.8min, 18.3min, 18.8min, 19.1min, 19.5min,
19.8min etc., wash away PMMA, clean post-drying with dehydrated alcohol and deionized water subsequently stand-by.
Preferably, the described method patterning the Graphene of window touch area 3 of step (3) is selected from light
Carve or etching, preferably be selected from laser ablation or reactive ion etching.
In prior art, the method that the transparent conductive film of touch screen patterns is had a lot, but for
The method of transparent graphene conductive film patterning, the research of technical staff is the most fewer.The present invention is by graphite
The method of alkene transparent conductive film patterning is preferably: first transfer on single substrate by large-area Graphene,
Then by photoetching, the method for etching, the Graphene of required patterning is etched.But it is of the present invention
The method of graphene film patterning be not limited in said method, any prior art or new technique
Disclosed in graphene film patterning method be used equally to the present invention, typical but non-limiting example has:
(1) utilize the method that template imprints, stamp Graphene in the place needing Graphene；Or (2) first pattern
Changing catalyst, growth obtains the Graphene of patterning, then retransfers；Or (3) are such as CN102653454A
The method of disclosed patterned Graphene thin film；Deng.
Preferably, described laser ablation uses laser direct-writing formula etching.So-called laser direct-writing, it is simply that utilize strong
Spend variable laser beam and the erosion resistant being coated in substrate surface is become dose exposure, on resist layer surface after development
Profile required by formation.Laser writing technology is the ordinary skill in the art, is summarizing " two such as Yan Shuhua etc.
The progress of unit's optics direct writing technology " in a literary composition, laser writing technology principle, method etc. are done
Summary (progress of binary optical device direct writing technology, face tree is magnificent, semiconductor optoelectronic, and 2002,
23(3): 159-162).Graphene film is patterned by laser ablation method of the present invention, it is not necessary to
Mask, can directly obtain electrode pattern.
Preferably, described reactive ion etching is that metal mask is close to displaced the monolithic of graphene film
On substrate, then it is placed in oxygen atmosphere and performs etching, the region hidden by metal mask, Graphene
Being retained, remaining region Graphene by oxygen plasma etch, thus will obtain Touch Zone electrode pattern.
The pattern that the patterning of the electrode of window touch area 3 of the present invention and the electrode of lead district 4 obtains
Selecting, those skilled in the art can be selected independently according to the Professional knowledge of practical situation and grasp,
Typical but non-limiting example is: the electrode of described window touch area 3 and the pattern of the electrode of lead district 4
Change the pattern obtained independently selected from any a kind in vertical or horizontal triangle, ellipse or strip.
Compared with prior art, there is advantages that
(1) present invention uses graphene conductive film as Touch Zone electrode, instead of tradition ito thin film,
Photopermeability and the impedance uniformity of Touch Zone sensing electrode can be significantly improved.Additionally, due to employing graphite
Alkene, as sensing electrode, is different from the ito thin film that plated film is formed, and is conducive to strengthening the making of glass, improves
The intensity of strengthening glass maintains ability and stability, and these all substantially increase condenser type OGS touch screen
Performance.
(2) present invention, avoiding the gold-tinted processing procedure of complexity, high cost, in viewfinder area, sensing electrode pattern is formed
During, add reactive ion etching only with laser direct-writing etching or metal mask, processing technology is convenient and swift,
Efficiently.Additionally, in lead-in wire electrode processing procedure, if lead-in wire electrode uses Graphene, only need to use and Touch Zone
The pattern forming technology of sensing electrode integration.If lead-in wire electrode is silver slurry, then use silk screen printing
Traditional method.These technical schemes advantageously reduce technical costs, improve and produce yield.
Accompanying drawing explanation
Fig. 1 is the schematic appearance of capacitive touch screen of the present invention；
Fig. 2 is that the A-A walking crosswise sensing electrode I in embodiment 1 is to cross-sectional view；
Fig. 3 is that the A-A of longitudinally sensing electrode II in embodiment 1 is to cross-sectional view；
Fig. 4 is that the A-A of longitudinally sensing electrode III in embodiment 1 is to cross-sectional view；
Description of reference numerals:
1-single substrate；2-non-form ink area；3-window touch area；4-lead district；5-pastes controller district.
Detailed description of the invention
For ease of understanding the present invention, it is as follows that the present invention enumerates embodiment.Those skilled in the art it will be clearly understood that
The only help of described embodiment understands the present invention, is not construed as the concrete restriction to the present invention.
Embodiment 1
A kind of capacitive touch screen structure based on graphene film comprises: single substrate 1；Non-form ink area
2；Window touch area 3；Lead district 4；Patch controller district 5, wherein window touch area 3 and the electricity of lead district 4
Pole is Graphene electrodes, and the electrode of lead district 4 is pooled to paste controller region 5, outside being connected by controller
Portion's structure.Fig. 1 is condenser type touch screen substrate schematic appearance of the present invention.Control zone 5 is pasted described in Fig. 1
Only denote on capacitive touch screen, the mounting position of controller.
The preparation method of described capacitive touch screen based on graphene film comprises the steps:
(1) clear monolithic substrate 1 is carried out；
(2) surrounding on clear monolithic substrate 1 forms non-form ink area 2, and non-form ink area 2 is enclosed
The region that zone line is window touch area 3 become；
(3) transfer Graphene is to clear monolithic substrate 1, covers whole non-form ink area 2 and form touch-control
The region in district 3；
(4) graphene pattern that will cover on the region of non-form ink area 2 and window touch area 3, by
Graphene on this non-form ink area 2 forms the electrode of lead district 4, on the region of window touch area 3
Graphene forms the electrode of window touch area 3；
(5) patch controller chip.
Wherein, the step on step (3) described transfer graphene film to touch screen single substrate 1, take
PMMA transfer method is transferred on touch screen base plate.Described PMMA transfer method comprises the steps:
(I) Copper Foil of Graphene flattens by superficial growth；
(II) in the graphene growth face spin coating PMMA solution of step (I) described Copper Foil, naturally dry；
The preferred toluene of solvent of described PMMA solution and/or methyl phenyl ethers anisole；
(III) etching Copper Foil obtains Graphene/PMMA thin film；Described etching Copper Foil preferably at Ammonium persulfate. or
Ferric chloride solution is carried out；
(IV) Graphene/PMMA thin film after the complete Copper Foil of etching；
(V) Graphene/PMMA thin film is transferred on single substrate, dries；
(VI) the single substrate baking of Graphene/PMMA thin film will be displaced；Described baking temperature is
120 ~ 160 DEG C of baking times are 15 ~ 30min；
(VII), after the single substrate after baking being cooled to room temperature, it is placed in the solution such as acetone or dichloromethane
Soak 15 ~ 30min, wash away PMMA, clean post-drying with dehydrated alcohol and deionized water subsequently stand-by.
PMMA transfer method transfer graphene film is obtained in that have excellent sheet resistance (less than 300 Ω/m2)
Conductive film with light transmission features (visible region mean transmissivity is higher than 85%).
In the present embodiment, the electrode of the electrode of window touch area 3 and lead district 4 all uses Graphene, and two
The patterning of person can pass through laser ablation or reactive ion etching one-shot forming.The electrode of window touch area 3
The pattern obtained with the patterning of the electrode of lead district 4 can be vertical or horizontal triangle, ellipse or
Strip.
Touch Zone electrode can use vertical or horizontal triangle, ellipse or strip.Fig. 2, Fig. 3 and figure
4 is the profile of various electrode configuration, and by preferred version, touch screen can obtain optimal touch effect,
Specific as follows:
1, electrode I: its lead district distribution of electrodes is laterally sensed in (Ji Tie controller district 5, Fig. 1 left and right sides
Both sides) ink area on, finally come together in patch controller region 5 within.Fig. 2 is for laterally sensing electricity
The A-A of pole I is to profile.
2, electrode II: its lead district electrode is longitudinally sensed directly by (the one of Ji Tie controller district 5 on the upside of Fig. 1
Side) ink area formed, and come together in patch controller region 5 within.Fig. 3 is the A-A longitudinally sensing electrode II
To profile.
3, electrode III: its lead district distribution of electrodes is longitudinally sensed in (Ji Tie controller district 5, Fig. 1 left and right sides
Both sides) ink area and upside oil (side in Ji Tie controller district 5) ink-covered area on, finally collect
Within patch controller region 5.Fig. 4 is that the A-A of longitudinally sensing electrode III is to profile.
Embodiment 2
A kind of capacitive touch screen structure based on graphene film comprises: single substrate 1；Non-form ink area
2；Window touch area 3；Lead district 4, wherein the electrode of window touch area 3 is Graphene, lead district 4
Electrode be ag paste electrode.
The preparation method of described capacitive touch screen based on graphene film comprises the steps:
(1) clear monolithic substrate 1 is carried out；
(2) surrounding on clear monolithic substrate 1 forms non-form ink area 2, and non-form ink area 2 is enclosed
The zone line in city is the region of window touch area 3；
(3) make the silver slurry lead-in wire electrode of lead district 4 and pattern；
(4) transfer Graphene is to clear monolithic substrate 1, covers the region of window touch area 3；
(5) graphene pattern that will cover on the region of window touch area 3, thus window touch area 3
Graphene on region forms the electrode of window touch area 3；
(6) patch controller chip.
Wherein, the step on step (3) described transfer graphene film to the region of window touch area 3, adopt
Take PMMA transfer method to transfer on touch screen base plate.The operation of described PMMA transfer method and embodiment 1
Operation identical.
In the present embodiment, by PMMA transfer method, strengthening glass list is covered in graphene conductive film transfer
On plate base 1, the electrode of window touch area 3 extends over step (3) and has completed the lead district of wiring
On electrode, completed the patterning of Graphene electrodes subsequently by laser ablation or reactive ion etching, and
Lead district Graphene is effectively isolated.Those skilled in the art are it will be clearly understood that described " being effectively isolated "
Purpose be to keep the accurate of the transmission of signal between window touch area and controller, mainly may include that
Lead district electrode with extend over Graphene thereon carry out isolating, lead district electrode patterning during from
The isolation of body, non-endpoint location and the Touch Zone electrode directly isolation etc. of lead district electrode.
Embodiment 3
A kind of capacitive touch screen structure based on graphene film comprises: single substrate 1；Non-form ink area
2；Window touch area 3；Lead district 4, wherein the electrode of window touch area 3 and lead district 4 is Graphene
Electrode.
The preparation method of described capacitive touch screen based on graphene film comprises the steps:
(1) clear monolithic substrate 1 is carried out；
(2) surrounding on clear monolithic substrate 1 forms non-form ink area 2, and non-form ink area 2 is enclosed
The zone line in city is the region of window touch area 3；
(3) transfer Graphene is to clear monolithic substrate 1, covers whole non-form ink area 2 and form touch-control
The region in district 3；
(4) graphene pattern that will cover on the region of window touch area 3, thus window touch area 3
Graphene on region forms the electrode of window touch area 3；
(5) graphene pattern that will cover on non-form ink area 2, on the most non-form ink area 2
Graphene forms the electrode of lead district 4；
(6) patch controller chip.
Wherein, the step on step (3) described transfer graphene film to the region of window touch area 3, adopt
Take PMMA transfer method to transfer on touch screen base plate.The operation of described PMMA transfer method and embodiment 1
Operation identical.
Graphene patternization described in step (4) and step (5) passes through laser ablation or reactive ion etching
Complete.
Applicant states, the present invention illustrates detailed process equipment and the technique of the present invention by above-described embodiment
Flow process, but the invention is not limited in above-mentioned detailed process equipment and technological process, i.e. do not mean that the present invention
Have to rely on above-mentioned detailed process equipment and technological process could be implemented.Person of ordinary skill in the field should
This understands, any improvement in the present invention, and the equivalence of raw material each to product of the present invention is replaced and auxiliary element
Interpolation, concrete way choice etc., within the scope of all falling within protection scope of the present invention and disclosure.
Claims (24)
1. the preparation method of a monolithic capacitive touch screen, it is characterised in that described method includes walking as follows
Rapid:
(1) edge on single substrate forms non-form ink area (2), non-form ink area (2)
Surround window touch area (3)；
(2) transfer Graphene is on single substrate (1), covers whole window touch area (3) and non-form
Ink area (2)；
(3) Graphene of window touch area (3) and non-form ink area (2) is patterned；
(4) patch controller chip；
Described monolithic capacitive touch screen includes: single substrate (1), non-form ink area (2), form touch
Control district (3) and lead district (4)；
The upper surrounding of described single substrate (1) arranges non-form ink area (2), described non-form ink area (2)
Around forming window touch area (3), described non-form ink area (2) arranges lead district (4)；
The electrode material of described window touch area (3) is transparent graphene conductive film；
Described lead district (4) is Graphene electrodes.
2. the preparation method of a monolithic capacitive touch screen, it is characterised in that described method includes walking as follows
Rapid:
(1) edge on single substrate forms non-form ink area (2), non-form ink area (2)
Surround window touch area (3)；
(2) transfer Graphene is on single substrate (1), covers whole window touch area (3)；
(3) Graphene of window touch area (3) is patterned；
(3 ') are at non-form ink area (2) upper making lead-in wire electrode and pattern, and form lead district (4)；
(4) patch controller chip；
Described monolithic capacitive touch screen includes: single substrate (1), non-form ink area (2), form touch
Control district (3) and lead district (4)；
The upper surrounding of described single substrate (1) arranges non-form ink area (2), described non-form ink area (2)
Around forming window touch area (3), described non-form ink area (2) arranges lead district (4)；
The electrode material of described window touch area (3) is transparent graphene conductive film.
3. the preparation method of monolithic capacitive touch screen as claimed in claim 2, it is characterised in that described
The step (3 ') of method is between step (1) and (2).
4. the preparation method of monolithic capacitive touch screen as claimed in claim 2 or claim 3, it is characterised in that
Described lead district (4) is Graphene electrodes or ag paste electrode.
5. the method as described in one of claim 1-3, it is characterised in that step (1) described non-form oil
Ink thickness≤10 μm of ink-covered area (2).
6. the method as described in one of claim 1-3, it is characterised in that step (1) described non-form oil
The silk-screen printing technique that is formed by of ink-covered area (2) completes.
7. method as claimed in claim 6, it is characterised in that the described non-form ink area of step (1)
(2) carry out silk screen printing by grenadine, be then baked to printing-ink thickness≤10 μm；Described grenadine is
350-450 mesh.
8. method as claimed in claim 7, it is characterised in that described grenadine is 420 mesh.
9. the method as described in one of claim 1-3, it is characterised in that step (2) described Graphene is
Transparent graphene conductive film.
10. the method as described in one of claim 1-3, it is characterised in that step (2) described Graphene
Transparent conductive film be the atom number of plies be the Graphene of 1-10 layer, described transparent graphene conductive film visible
Optical transmittance >=85% of light.
11. methods as described in one of claim 1-3, it is characterised in that step (2) described Graphene
Preparation method selected from chemical vapour deposition technique, chemical dispersion method or heating SiC method in any a kind.
12. methods as claimed in claim 11, it is characterised in that the system of step (2) described Graphene
Preparation Method is chemical vapour deposition technique.
13. methods as described in one of claim 1-3, it is characterised in that step (2) described Graphene
Transfer method selected from polymethyl methacrylate transfer method, heat release adhesive tape transfer method or polydimethylsiloxanes
In alkane transfer method any a kind.
14. methods as claimed in claim 13, it is characterised in that turning of step (2) described Graphene
Shifting method is polymethyl methacrylate transfer method.
15. methods as claimed in claim 7, it is characterised in that the preparation of step (2) described Graphene
Method is chemical vapour deposition technique, and the step of described method is cracking carbon source gas at 800-1200 DEG C,
Graphene film is grown at substrate surface.
16. methods as claimed in claim 15, it is characterised in that described carbon source gas is for comprising only carbon
Atom and the organic gas of hydrogen atom.
17. methods as claimed in claim 16, it is characterised in that described carbon source gas is C1-4's
Alkane, the alkene of C2-4, C2-3 alkynes in any a kind or the combination of at least 2 kinds.
18. methods as claimed in claim 17, it is characterised in that described carbon source gas is methane, second
Alkane, ethylene, acetylene, propane, n-butene, isobutene., 1，2-butadiene, 1,3-butadiene, along butadiene,
Any a kind or the combination of at least 2 kinds in anti-dibutene, normal butane, iso-butane, propylene or cyclopropane.
19. methods as claimed in claim 18, it is characterised in that described carbon source gas be methane and/
Or acetylene.
20. methods as claimed in claim 15, it is characterised in that described substrate is selected from metal forming or invests
Metallic film on matrix, described metal is selected from any 1 in nickel, copper, rubidium, cobalt, palladium, platinum, iridium or ruthenium
Plant or the combination of at least 2 kinds.
21. methods as claimed in claim 20, it is characterised in that described substrate selected from Copper Foil, nickel foil,
Rubidium paper tinsel, ruthenium paper tinsel or any a kind or the combination of at least 2 kinds in being coated with the matrix of metal nickel film.
22. methods as claimed in claim 21, it is characterised in that described substrate is Copper Foil.
23. methods as described in one of claim 1-3, it is characterised in that step (3) is described to form
The method that the Graphene of Touch Zone (3) carries out patterning is selected from photoetching or etching.
24. methods as claimed in claim 23, it is characterised in that step (3) is described to form touch-control
The method that the Graphene in district (3) carries out patterning is laser ablation or reactive ion etching；
Described laser ablation uses laser direct-writing formula etching；
Described reactive ion etching is to be close to displaced on the single substrate of graphene film by metal mask,
Then it is placed in oxygen atmosphere and performs etching, the region hidden by metal mask, Graphene is retained,
Remaining region Graphene by oxygen plasma etch, thus will obtain Touch Zone electrode pattern.
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