CN1053639C - 节能炼硅新工艺 - Google Patents

节能炼硅新工艺 Download PDF

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CN1053639C
CN1053639C CN97105177A CN97105177A CN1053639C CN 1053639 C CN1053639 C CN 1053639C CN 97105177 A CN97105177 A CN 97105177A CN 97105177 A CN97105177 A CN 97105177A CN 1053639 C CN1053639 C CN 1053639C
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silicon
bodies
coke
coagulate
energy
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CN1177571A (zh
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孙联强
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
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Abstract

节能炼硅新工艺用于从含硅矿石中冶炼金属硅。其工艺过程为:将硅石破碎,球磨成硅粉,与石油焦、粘结剂和水混合,经压制成型为硅焦混凝体,装入热控炉内,在约1700℃的高温下熔炼成金属硅。硅焦混凝体成柱体状,柱体上有通孔,具有更多的空隙,使其透气性好,在热控炉内导热性能良好,熔融快,可节省电耗、节约原材料、减少劳动强度、降低生产成本等。

Description

节能炼硅新工艺
本发明涉及一种节能炼硅新工艺,适用于冶炼金属硅。
传统的冶炼金属硅生产工艺是将原料石英石破碎至直径2-8厘米的块状,与石油焦和木炭混合倒入热控炉内的电极棒周围,由电极产生1700℃高温熔融,经一定时间的冶炼产生金属硅。因炉内原料空隙少、透气性差,需用木炭助燃和人工对炉内搅拌,每吨金属硅耗电达14500-15000度,而且原材料利用率低。
本发明的任务是研究一种节能炼硅新工艺,采用预制硅焦混凝体的生产工艺技术,达到节能、节约原料、减轻劳动强度的目的。
本发明的任务是由以下方案来实现的。节能炼硅新工艺为:将硅石破碎,球磨成硅粉,与石油焦、粘结剂和水混合,经压制成型为硅焦混凝体,装入热控炉内,在约1700℃的高温下熔炼成金属硅,硅焦混凝体的组分为(重量百分比):硅粉60-65%,石油焦20-25%,粘结剂适量,水份3-10%。硅焦混凝体呈柱体状,柱体上有通孔。
本发明所提供的节能炼硅新工艺和设计的硅焦混凝体是炼硅工艺技术上的重大发现。硅焦混凝体具有更多的空隙,使其透气性好,在热控炉内导热性能良好,熔融快,而且不需木炭助燃。熔炼每吨金属硅可节约电耗3000度,节约石油焦15%,节约木炭,减少人工对炉内搅拌次数,小于2cm的石英石都可以利用,大大地降低了生产成本。
实施例。本实施例的工艺流程为:硅石→清洗→破碎球磨至140-150目→加入石油焦、粘结剂、水混合→搅拌→压制成型→硅焦混凝体→进入热控炉→在电极棒产生1700℃高温下→金属硅。其硅焦混凝体呈圆柱状,直径5cm,长7cm,中心有一通孔,通径为1.5cm,含水份约15%左右。硅焦混凝体的组分为:硅粉65%,石油焦25%,粘结剂7%,水份3%。

Claims (2)

1.一种节能炼硅新工艺,其特征在于将硅石破碎,球磨成硅粉,与石油焦、粘结剂和水混合,经压制成型为硅焦混凝体,装入热控炉内,在约1700℃的高温下熔炼生成金属硅,硅焦混凝体的组分为(重量百分比):硅粉60-65%,石油焦20-25%,粘结剂适量,水份3-10%。
2.根据权利要求1所述的节能炼硅新工艺,其特征在于硅焦混凝体呈柱体状,柱体上有通孔。
CN97105177A 1997-07-16 1997-07-16 节能炼硅新工艺 Expired - Fee Related CN1053639C (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN97105177A CN1053639C (zh) 1997-07-16 1997-07-16 节能炼硅新工艺

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Application Number Priority Date Filing Date Title
CN97105177A CN1053639C (zh) 1997-07-16 1997-07-16 节能炼硅新工艺

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CN1177571A CN1177571A (zh) 1998-04-01
CN1053639C true CN1053639C (zh) 2000-06-21

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101386410B (zh) * 2008-04-15 2011-04-27 南安市三晶阳光电力有限公司 一种软化金属硅冶炼炉炉渣的方法
CN102311116B (zh) * 2010-06-29 2013-03-13 比亚迪股份有限公司 一种工业硅的冶炼方法
CN102786054A (zh) * 2012-09-07 2012-11-21 昆明冶金研究院 一种还原熔炼微硅粉的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5888113A (ja) * 1981-11-17 1983-05-26 Denki Kagaku Kogyo Kk 金属珪素の精製法
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
CN87104483A (zh) * 1985-12-26 1988-12-07 陶氏康宁公司 一种用等离子弧精炼硅的工艺方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5888113A (ja) * 1981-11-17 1983-05-26 Denki Kagaku Kogyo Kk 金属珪素の精製法
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
CN87104483A (zh) * 1985-12-26 1988-12-07 陶氏康宁公司 一种用等离子弧精炼硅的工艺方法

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