CN105356874B - A kind of power output circuit that source current spike is eliminated based on constant-current source bias - Google Patents
A kind of power output circuit that source current spike is eliminated based on constant-current source bias Download PDFInfo
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Abstract
The invention discloses a kind of power output circuit that source current spike is eliminated based on constant-current source bias, including the first transistor Q1, second transistor Q2, third transistor Q3 and the 4th transistor Q4；The first transistor Q1 base stage is the input of power output circuit, and the 4th transistor Q4 emitter stage is the output end of power output circuit；6th transistor Q6 base stage is connected with the 7th transistor Q7 base stage, 6th transistor Q6 emitter stage is connected by the 4th resistance R4 with power supply VCC, 7th transistor Q7 emitter stage is connected by 3rd resistor R3 with power supply VCC, 7th transistor Q7 base stage is connected with the 7th transistor Q7 emitter stage, and the 7th transistor Q7 emitter stage is grounded by constant-current source module I 1.The present invention has switching speed fast, strong antijamming capability, and output signal rectangular property is good, and the beneficial effect that can be suppressed to source current spike.
Description
Technical field
It is particularly a kind of that source current spike is eliminated based on constant-current source bias the present invention relates to a kind of power output circuit
Power output circuit.
Background technology
The good band driving force of design rectangular property is generally required in the design of the devices such as digital photoelectrical coupler to patrol
Collect output circuit.
Digital optocoupler basic functional principle is infrared light-emitting device and infrared receiver device and signal transacting electricity
Road etc. is encapsulated in the device in same base, and input electrical signal is added on input luminescent device LED, and LED lights, optical receiver
Part receives optical signal and is simultaneously converted into electric signal, then directly exports electric signal, or by electric signal enhanced processing into criterion numeral
Word level is exported, and is so achieved that the conversion and output of " electrical-optical-electrical ", the medium just transmitted, thus input and output
End is being electrically insulation, i.e., so-called to be electrically isolated.
Specifically, in the digital optocoupler design of power-type, the small-signal of light receiving element output amplifies through centre
Power amplification, and the digital level of outputting standard would generally be carried out after circuit amplification by a power output circuit, with realization pair
The isolation control of some power-type devices (essence is to realize light current circuit control forceful electric power circuit).The design of power output circuit is
One importance of whole photo-coupler design.
In the prior art, the power output circuit for the digital optocoupler signal processing circuit portion point realized by bipolar process
Widely used totem output circuit is realized, but totem output circuit often there is switching speed slowly and antijamming capability is low
The shortcomings of, it is not suitable with High-Speed Coupled Device and applies needs.
In addition based on the reason for system job stability demand, we are often desirable to (1) power output circuit rectangular property
Well (adapt to digital control needs)；(2) and the source current of power output circuit can keep relative stability, occur without significantly
The overshoot of degree.
The content of the invention
It is fast it is an object of the invention to provide a kind of switching speed for deficiencies of the prior art, anti-interference energy
Power is strong, and output signal rectangular property is good, and the power output circuit that can be suppressed to source current spike.
To achieve the above object, the present invention uses following technological means：
A kind of power output circuit that source current spike is eliminated based on constant-current source bias, it is characterised in that including first
Transistor Q1, second transistor Q2, third transistor Q3 and the 4th transistor Q4；The first transistor Q1 base stage is power output
The input of circuit；
The first transistor Q1 colelctor electrode is connected with third transistor Q3 base stage, and connection electrical nodes are designated as electrical nodes a；
Third transistor Q3 colelctor electrode is connected by second resistance R2 with power supply VCC, third transistor Q3 colelctor electrode with
4th transistor Q4 colelctor electrode is connected, and third transistor Q3 emitter stage is connected with the 4th transistor Q4 base stage, the
First resistor R1 is connected between three transistor Q3 emitter stage and the 4th transistor Q4 emitter stage；4th transistor Q4 transmitting
Pole is the output end of power output circuit；
The first transistor Q1 emitter stage is connected with second transistor Q2 base stage, and connection electrical nodes are designated as electrical nodes b；
Electrical nodes b is connected by the 5th resistance R5 with the 5th transistor Q5 base stage, and electrical nodes b is brilliant by the 6th resistance R6 and the 5th
Body pipe Q5 colelctor electrode is connected, the 5th transistor Q5 grounded emitter；
Second transistor Q2 colelctor electrode is connected with the output end of the power output circuit；Second transistor Q2 hair
Emitter-base bandgap grading is directly grounded；
6th transistor Q6 base stage is connected with the 7th transistor Q7 base stage, and the 6th transistor Q6 emitter stage passes through
4th resistance R4 is connected with power supply VCC, and the 7th transistor Q7 emitter stage passes through 3rd resistor R3 and power supply VCC
It is connected, the 7th transistor Q7 base stage is connected with the 7th transistor Q7 colelctor electrode, the 7th transistor Q7 colelctor electrode leads to
Constant-current source module I 1 is crossed to be grounded；6th transistor Q6 colelctor electrode is connected with electrical nodes a；
The first transistor Q1, second transistor Q2, third transistor Q3, the 4th transistor Q4 and the 5th transistor Q5
For NPN transistor；The 6th transistor Q6 and the 7th transistor Q7 is PNP transistor.
Further, the first transistor Q1 is Schottky clamped transistor, and the second transistor Q2 is Schottky
Clamping transistor, the third transistor Q3 are that Schottky clamped transistor, the 4th transistor Q4 are that Schottky clamp is brilliant
Body pipe.
Further, the effective overall circumference in launch site of the first transistor Q1 is 650 μm, the second transistor Q2
The effective overall circumference in launch site be 650 μm, the effective overall circumference in launch site of the third transistor Q3 is 650 μm, the described 4th
The transistor Q4 effective overall circumference in launch site is 650 μm.
Compared with prior art, the present invention has the advantages that：
(1) in the present invention, due to releasing resistance first resistor R1 presence, can release storage electric charge in paraphase, make
Circuit average transfer delay time Tpd declines, thus with the beneficial effect of circuit operating rate can be improved.
(2) present invention uses the 5th transistor Q5, and the 5th resistance R5, the structure of the 6th resistance R6 compositions replaces basic totem
The R12 of post circuit, with good in anti-interference performance beneficial effect.
(3) present invention uses constant-current source as active biased can then provide relatively stable base stage for efferent duct in switching instant
Driving current is so as to the beneficial effect with the spike high current that can eliminate switching instant source current.
Brief description of the drawings
Fig. 1 is photo-coupler photoelectric detective circuit block diagram；
Totem output circuit basic Fig. 2；
Fig. 3 is circuit structure diagram of the invention；
Fig. 4 is power output circuit voltage-transfer characteristic
Fig. 5 is the source current situation of power output circuit
Fig. 6 uses the power output circuit source current situation of constant-current source bias
Fig. 7 is P+The SBD of diffusing protection ring structure
Embodiment
With reference to the accompanying drawings and examples, the present invention is described in further details.
Photoelectrical coupler is that one kind is encapsulated in infrared light-emitting device and infrared receiver device and signal processing circuit etc.
Device in same base, input electrical signal is added on input luminescent device LED, and LED lights, and light receiving element receives light letter
Number and be converted into electric signal, then electric signal is directly exported, or by electric signal enhanced processing into standard digital level export,
So it is achieved that the conversion and output of " electrical-optical-electrical ", the medium just transmitted, thus input with output end electrically
Insulation, i.e., it is so-called to be electrically isolated.
Photoelectrical coupler is widely used in computer and its Peripheral Interface, industry control, telecommunications, instrument and meter, data/address bus, height
Isolation, arteries and veins between speed digital system, I/O mouthfuls of numeral, analog/digital conversion, data transmission, interface microcontroller, level conversion, signal and level
Rush the fields such as amplification, Medical Devices；It is even each in the linear isolation of power technology, electricity feedback, current sense, electrical transformation etc.
Individual occasion has successful application, and market demand is held after growth, developed extremely rapid.
The photoelectric detection part circuit block diagram of common photo-coupler is as shown in figure 1, circuit is mainly sensed by photodetection
Device, preamplifier, intermediate amplifier, power and logic output par, c and output protection circuit composition.
Power is that the small-signal for exporting intermediate amplifier further carries out power with logic output par, c major function
Amplification, and outputting standard data signal.
The power and logic for the digital optocoupler photoelectric detection part circuit part realized by bipolar integrated circuit technique
The widely used totem output circuit as shown in Figure 2 of output circuit (power output circuit) is realized, but totem output electricity
Road often has that switching speed is slow and the low shortcoming of antijamming capability, is not suitable with High-Speed Coupled Device application needs.
In order to solve, switching speed that traditional totem output circuit is often present is slow and the low shortcoming of antijamming capability,
Invention devises the topological structure of the power output circuit such as Fig. 3, and specific topological connection relation is：
The Basic Topological of power output circuit of the present invention includes the first transistor Q1, second transistor Q2, the 3rd crystalline substance
Body pipe Q3 and the 4th transistor Q4；The first transistor Q1 base stage is the input of power output circuit；
The first transistor Q1 colelctor electrode is connected with third transistor Q3 base stage, and connection electrical nodes are designated as electrical nodes a；
Third transistor Q3 colelctor electrode is connected by second resistance R2 with power supply VCC, third transistor Q3 colelctor electrode with
4th transistor Q4 colelctor electrode is connected, and third transistor Q3 emitter stage is connected with the 4th transistor Q4 base stage, the
First resistor R1 is connected between three transistor Q3 emitter stage and the 4th transistor Q4 emitter stage；4th transistor Q4 transmitting
Pole is the output end of power output circuit；
The first transistor Q1 emitter stage is connected with second transistor Q2 base stage, and connection electrical nodes are designated as electrical nodes b；
Electrical nodes b is connected by the 5th resistance R5 with the 5th transistor Q5 base stage, and electrical nodes b is brilliant by the 6th resistance R6 and the 5th
Body pipe Q5 colelctor electrode is connected, the 5th transistor Q5 grounded emitter；
Second transistor Q2 colelctor electrode is connected with the output end of the power output circuit；
Described above is also the basic circuit topological structure of the present invention, not including the 6th transistor Q6, and the 7th brilliant
Body pipe Q7 and its related resistors.It is emphasized that：Electrical nodes a can be connected by a biasing resistor with power supply VCC, i.e.,
It can overcome the inherent shortcoming of totem-pote circuit, but the present invention have also been made further be connected with electrical nodes a at biasing resistor
Improve so that circuit performance is more excellent, and we first illustrate that electrical nodes a is directly connected by a biasing resistor with power supply VCC here
The situation connect, in order to avoid the confusion in description, we herein call foregoing circuit, and " basic circuit topology of the invention is tied
Structure "：
Specifically we by analyze the specific difference of basic circuit structure of the present invention and basic totem output circuit come
Circuit operation of the present invention is illustrated, and solves the basic ideas of technical problem：
(1) moment of the basic totem output circuit in output end from high level to low transition, flowed through from power supply
There are Transient Currents to flow through in R13, M3, M2, diode, thus the substantial amounts of electric charge of storage is returned in the PN junction of diode, due to line
Do not have on road bleed-off circuit these electric charges can only the sub- self compounding of tube and disappear, this will have influence on the switching speed of circuit.
Output circuit in the present invention employs the structure being made up of third transistor Q3 and the 4th transistor Q4 as height
Level output stage, and addition releases resistance R1.Due to VCB4=VCE3 ＞ 0, wherein VCB4 is the 4th transistor Q4 colelctor electrode
Voltage difference between base stage, the voltage difference between VCE3 third transistor Q3 colelctor electrodes and emitter stage, therefore the 4th transistor
Q4 will not enter saturation region, and the storage electric charge of base is greatly reduced when the 4th transistor Q4 is turned on, and due to releasing resistance
First resistor R1 presence, can release storage electric charge in paraphase so that circuit average transfer delay time Tpd declines, because
And improve the operating rate of circuit；In addition, the current gain of Darlington transistor emitter follower is big, output resistance is small to increase circuit height
Load capacity when level is exported.
(2) base loop of basic totem output circuit low level output pipe is made up of resistance R12.When M1 pipes are firm
Begin to turn on, the collector potential of M1 pipes is begun to decline, and now M2 not yet turns on this prevent circuit is low from instant output
Level, the antijamming capability of circuit declines.Furthermore due to R12 presence, divide to have walked the ideal base drive current of part M2 pipes, made electricity
Flat fall time extension.
Asked questions to solve these, output circuit of the invention uses the electricity of the 5th transistor Q5, the 5th resistance R5, the 6th
The structure for hindering R6 compositions replaces the R12 of basic totem-pote circuit.Because R5 presence just causes the conducting more late than Q2 pipe of Q5 pipes, so
The emitter current of Q1 pipes all pours into the base stage of Q2 pipes so that Q2 is managed and Q1 pipes are almost simultaneously turned on, and improves circuit transmission
The rectangularity of characteristic, improves the interference free performance of circuit, and when Q2 guarantee adequate food with after Q5 pipes be also gradually turned on and enter saturation, it is right
Q2 pipes are shunted, and Q2 pipe saturation degrees is shoaled.Because Q5 manages shallow saturation, excess storage electric charge reduces, thus the release of Q2 pipes is full
The speed of sum is improved.In the transient state of cut-off, because the base stage of Q5 pipes does not have bleed-off circuit, storage electricity is eliminated by compound completely
Lotus, so the cut-off more late than Q2 pipe of Q5 pipes, makes Q2 pipes have a good bleed-off circuit and disengaging saturation quickly, improve circuit
Operating rate, therefore the present invention not only increase the antijamming capability of circuit and improve circuit speed.
Simultaneously because this structure has certain self-adjusting effect to the discreteness of β in temperature change and technique, it is this
Self-adjusting is made make it that the saturation depth of Q2 pipes is more stable, improves the transient response of circuit and the temperature characterisitic of load capacity,
Reduce influence of the technique discreteness to circuit characteristic.
(3) Fig. 4 is to emulate the power output circuit voltage-transfer characteristic of the present invention drawn by cadence.By to electricity
Pressure transmission characteristic analysis we can be clearly seen that by reasonably setting the quiescent point Q of electrical nodes a points (to set herein
1.6V or so is calculated as, the quiescent point has with a distance from 0.3V from break over region), it is defeated when no signal input circuit is operated in static state
Go out low level for 0.35V, input voltage is less than more than 1.3V circuit output high level 27V when prime negative-going pulse is reached.
But the Basic Topological of the power output circuit is there is also a significant shortcoming, we are with a biased electrical
After electrical nodes a and positive source VCC is connected in resistance (the Basic Topological circuit of output circuit is complete), simulation analysis hair is carried out
It is existing：When the cycle arrives for 40us input trigger signal, source current has one than larger overshoot, as shown in Figure 5 defeated
Enter the spike that trigger signal occurs a 33.07mA from high level to low transition instantaneous power electric current, when input triggering letter
Occurs 204.4mA spike number from high level to low transition instantaneous power electric current.
In order to overcome drawbacks described above, solution proposed by the invention is：Adoption rate current source makees biasing and replaces inclined
Put resistance.Specifically topological structure is：
6th transistor Q6 base stage is connected with the 7th transistor Q7 base stage, and the 6th transistor Q6 emitter stage passes through
4th resistance R4 is connected with power supply VCC, and the 7th transistor Q7 emitter stage passes through 3rd resistor R3 and power supply VCC
It is connected, the 7th transistor Q7 base stage is connected with the 7th transistor Q7 colelctor electrode, the 7th transistor Q7 colelctor electrode leads to
Constant-current source module I 1 is crossed to be grounded；
6th transistor Q6 colelctor electrode is connected with electrical nodes a；
The first transistor Q1, second transistor Q2, third transistor Q3, the 4th transistor Q4 and the 5th transistor Q5
For NPN transistor；The 6th transistor Q6 and the 7th transistor Q7 is PNP transistor.
Efferent duct is analyzed in the working condition of input trigger signal low and high level switching instant it is recognised that working as trigger signal
Efferent duct state moment is changed into saturation conduction (exemplified by carrying out interim upper pipe by trailing edge) from cut-off during level conversion, in this moment
Power tube necessarily extracts electric current to provide ideal base drive current by the biasing resistor between electrical nodes a and power supply VCC, this certainty
Source current is caused to produce a big peak current, this peak current after pipe to be output is in stable condition in extremely short conversion time
Also disappear therewith.And the present invention use constant-current source as it is active biased then can for efferent duct switching instant provide relatively stablize base
Pole driving current is so as to eliminate the spike high current of switching instant source current.
As shown in fig. 6, being made moderate progress using source current overshoot after the structure, input signal turns from high level to low level
Instantaneous power current over pulse is changed to substantially eliminate, but from low level to high level switching instant to still suffer from one larger for input signal
179.9mA spike.
In addition in order to adapt to requirement of the power-type photoelectric coupled circuit to output driving ability and speed, we are in this circuit structure
On the basis of special design has been carried out to power output pipe Q1, Q2, Q3, Q4.It is to be noted that the present invention can be using maturation
The manufacture of bipolar integrated circuit technique, be integrated in together with other signal processing circuits of photo-coupler optical detection circuit when using
On one monolithic.
In order to improve circuit operating rate we replaced with SCT (Schottky clamped transistor) may saturation general crystalline substance
SBD (Schottky-barrier diode) in body pipe, SCT can make the VBC positions of transistor in SBD conducting voltage, it is to avoid
Transistor enters deep saturation state, declines storage electric charge, and circuit speed is accelerated.
To the V in SCT design most importantly to SBDMSAnd SBD area and the design of breakdown voltage, this outgoing
The effective overall circumference for penetrating area is also important parameter.
1) design of SBD areas
The voltage for having SBD two ends by basic theories is：
VMS(IF)=VDF(IF)+IFrs (1)
It that is to say VMS(IF) relevant with the series resistance of SBD conducting electric current, conducting voltage and SBD, and SBD series connection
Resistance is relevant with SBD area, so SBD's is mainly designed in given VMS(IF) and IFIn the case of design SBD area.
Had by SBD V-I relations：
I=IDS[exp(V/Vt)-1]
(2)
IDSIt is represented by for reverse saturation current：
R in formula*For effective Li Chasen constants, N-Si R at room temperature*For 112A/cm2·K2, T is what absolute temperature was represented
Junction temperature,For contact berrier between metal and semiconductor highly, numerical value is different and different from semiconductor because of metal, Al-Si formation
SBD itsFor 0.7V.
From formula 2,3 it can be seen that being to try to achieve appropriate SBD areas and shape in the case where meeting certain ID to meet to VMS
Requirement.
2) design of breakdown voltage
SBD breakdown voltage size and SBD structure have much relations.Typically conventional SBD has three kinds of structures, is carrying out
Corresponding structure can be selected according to pressure-resistant requirement during circuit design.
Consider that circuit voltage scope is relatively wide (10V-30V) in the design, in order to ensure circuit in various works
Make steady operation under voltage we using a kind of structure maximum BV in three kinds of structures：P+Diffusing protection ring structure, such as Fig. 7 institutes
Show, the situation that this structure concentrates electric field is relaxed, the unstability for preventing leakage current from bringing, and BV is substantially by N-
The decision of Si doping concentrations, its BV >=25V, but area and parasitic capacitance are all increased.
3) design of effective overall circumference of launch site
Due to " electric current collection side " effect of emitter current so that the maximum operating currenbt Iemax of transistor has been proportional to
Emitter stage girth is imitated, and it is almost unrelated with launch site size, and effective launch site girth of power tube can be calculated by formula 4：
Typically taken for the NPN pipes in the technique：
αE=0.05~0.16mA/ μm (low level signal amplification)
αE=0.16~0.40mA/ μm (big signal amplification)
Because power tube needs to export significantly logic level signal, so we take αE=0.2mA/ μm.By circuit
Principle analysis, the maximum transient current I of each power tubeCmax130mA or so is can reach, therefore is readily obtained：
4) design of line width is connected between power tube
Metal film interconnection line is mainly used in transmitting the place of high current density.Due to aluminium it is conductive can it is good, with silicon and
SiO2Adhesiveness is good, good Ohmic contact can be formed with silicon, it is easy to process, the low advantage of alloy temperature, so general integrated
Circuit all makees intraconnections from aluminium film.
When designing the aluminum strip figure of interconnection line, except consider minimum dimension as defined in connection circuit and design rule (including
Minimum aluminum strip width and aluminum strip spacing, with the minimum vertex-covering of electrode hole etc.) limitation is outer, it should also be noted that the resistance of long lead, big electricity
The mutual Railway Project such as molten of the limitation of current density, Si-Al, must ensure there is enough especially for power transistor connection Al lines
Width.
Electric current too conference causes aluminium film balling, even if electric current is less big, and long-time larger current can produce aluminium by aluminum strip
" electromigration " phenomenon, i.e. aluminium moves from from negative pole to positive electrode direction.As a result whisker, the other end are produced in aluminium line one end
Cavity is then produced, even open circuit when serious.GJB597A provides that the current density for flowing through pure aluminium film is
J≤5×105A/cm2=5mA/ μm2 (5)
When design flows through the ground wire and power line of high current, it must ensure that aluminum strip has enough width.Ordinary circumstance
The thickness t of lower aluminium filmAl=(1.2 ± 0.2) μm, here we take aluminium film thickness for 1.2 μm according to circuit design requirements power tube
Line must endure as more than 100mA electric current, can calculate the most narrow width of aluminium film and be：
Finally we illustrate the layout of four power tubes：
In IC, the figure of transistor, the resistance of resistance and their position all go out lay photoetching mask plate decision, production
Quality, the yield rate of product largely also depend on it.The domain designed is set to be obtained under existing process level
Best effect, according to circuit theory, should be fully understood by situation and their influences to circuit parameter of each element, rational right
Each element is laid out, and to complete layout work must reasonably divide isolated area according to circuit theory first.
Each isolated area when transferring position in domain, can be used as one for whole domain as a unit
Overall, the content of each isolated area completely can be with independent design.In general, each transistor is each individually accounts for an isolation
Area, but an isolated area can then be shared to the NPN pipes (or PNP pipe of common base) of common collector；Several base resistances can be total to
It is reasonable for whole Butut with an isolated area, but because the shape on resistance island is often determined by the Butut of transistor, differ
Fixed all resistance all one isolated islands of old friend, and some resistance can be then placed on transistor in an isolated area, to be conducive to
Layout and saving area；Each pressure welding point will also have single isolated island, to prevent short circuit between pressure welding point, so, i.e.,
Make the oxide layer existing defects under each pressure welding point, cause Al layers to be communicated with following epitaxial layer, also do not result in pressure welding point
Between short circuit.
Due to Q4 in the design, Q2 is the connected NPN pipes of colelctor electrode, it is possible to share an isolated island.Circuit is drawn altogether
It is divided into four isolated islands (except press welding block).It that is to say that Q4, Q2 share an isolated island, Q1, Q3 respectively accounts for an isolated island, R1,
R2, R3, R4 share an isolated island.
Especially to pay attention to the design of symmetric element during layout design.Hooked to preferably eliminate thermal gradient, the uneven of material
And technique etc. should carefully carry out thermally equilibrated design, so as to require that symmetrical element is in for the adverse effect of symmetry
Under conditions of Temperature Distribution is just the same, larger four power tubes of output stage power consumption are placed on chip one end by we in the present invention
The both sides of center line.
Finally illustrate, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although with reference to compared with
The present invention is described in detail good embodiment, it will be understood by those within the art that, can be to skill of the invention
Art scheme is modified or equivalent substitution, and without departing from the objective and scope of technical solution of the present invention, it all should cover at this
Among the right of invention.
Claims (3)
1. a kind of power output circuit that source current spike is eliminated based on constant-current source bias, it is characterised in that brilliant including first
Body pipe Q1, second transistor Q2, third transistor Q3 and the 4th transistor Q4；The first transistor Q1 base stage is power output electricity
The input on road；
The first transistor Q1 colelctor electrode is connected with third transistor Q3 base stage, and connection electrical nodes are designated as electrical nodes a；3rd
Transistor Q3 colelctor electrode is connected by second resistance R2 with power supply VCC, third transistor Q3 colelctor electrode and the 4th
Transistor Q4 colelctor electrode is connected, and third transistor Q3 emitter stage is connected with the 4th transistor Q4 base stage, and the 3rd is brilliant
First resistor R1 is connected between body pipe Q3 emitter stage and the 4th transistor Q4 emitter stage；4th transistor Q4 emitter stage is
The output end of power output circuit；
The first transistor Q1 emitter stage is connected with second transistor Q2 base stage, and connection electrical nodes are designated as electrical nodes b；Electricity section
Point b is connected by the 5th resistance R5 with the 5th transistor Q5 base stage, and electrical nodes b passes through the 6th resistance R6 and the 5th transistor
Q5 colelctor electrode is connected, the 5th transistor Q5 grounded emitter；
Second transistor Q2 colelctor electrode is connected with the output end of the power output circuit；Second transistor Q2 emitter stage
It is directly grounded；
6th transistor Q6 base stage is connected with the 7th transistor Q7 base stage, and the 6th transistor Q6 emitter stage passes through the 4th
Resistance R4 is connected with power supply VCC, and the 7th transistor Q7 emitter stage is connected by 3rd resistor R3 with power supply VCC
Connect, the 7th transistor Q7 base stage is connected with the 7th transistor Q7 colelctor electrode, the 7th transistor Q7 colelctor electrode passes through perseverance
Flow source module I1 ground connection；6th transistor Q6 colelctor electrode is connected with electrical nodes a；
The first transistor Q1, second transistor Q2, third transistor Q3, the 4th transistor Q4 and the 5th transistor Q5 are
NPN transistor；The 6th transistor Q6 and the 7th transistor Q7 is PNP transistor.
2. a kind of power output circuit that source current spike is eliminated based on constant-current source bias according to claim 1, its
It is characterised by, the first transistor Q1 is Schottky clamped transistor, the second transistor Q2 is Schottky clamping crystal
Pipe, the third transistor Q3 are that Schottky clamped transistor, the 4th transistor Q4 are Schottky clamped transistor.
3. a kind of power output electricity that source current spike is eliminated based on constant-current source bias according to claims 1 or 2
Road, it is characterised in that the effective overall circumference in launch site of the first transistor Q1 is 650 μm, the hair of the second transistor Q2
It is 650 μm to penetrate the effective overall circumference in area, and the effective overall circumference in launch site of the third transistor Q3 is 650 μm, the 4th crystal
The pipe Q4 effective overall circumference in launch site is 650 μm.
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| CN101925222A (en) * | 2010-01-12 | 2010-12-22 | 海洋王照明科技股份有限公司 | Power output circuit for LED driving device |
| CN205212815U (en) * | 2015-08-16 | 2016-05-04 | 重庆电子工程职业学院 | Power output circuit based on supply current peak is eliminated in constant current source biasing |
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| US8901910B2 (en) * | 2012-05-11 | 2014-12-02 | Intersil Americas LLC | System and method of predictive current feedback for switched mode regulators |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201307964Y (en) * | 2008-11-19 | 2009-09-09 | 宫正基 | Electronic ballast for high voltage sodium lamp and metal halide lamp |
| CN101925222A (en) * | 2010-01-12 | 2010-12-22 | 海洋王照明科技股份有限公司 | Power output circuit for LED driving device |
| CN205212815U (en) * | 2015-08-16 | 2016-05-04 | 重庆电子工程职业学院 | Power output circuit based on supply current peak is eliminated in constant current source biasing |
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| CN105356874A (en) | 2016-02-24 |
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