CN105355543B - Patterned semiconductor polymer thin membrane preparation method based on silk fiber - Google Patents
Patterned semiconductor polymer thin membrane preparation method based on silk fiber Download PDFInfo
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- CN105355543B CN105355543B CN201510629271.8A CN201510629271A CN105355543B CN 105355543 B CN105355543 B CN 105355543B CN 201510629271 A CN201510629271 A CN 201510629271A CN 105355543 B CN105355543 B CN 105355543B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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Abstract
Patterned semiconductor polymer thin membrane preparation method based on silk fiber, patterned mainly for the preparation of the micro-nano of semiconducting polymer film material, this method includes：Exposure technique is used first in the complementary sized of thin polymer film micro-nano pattern needed for the preparation of photoresist film surface；Secondly uncrosslinked PDMS material is coated in figuratum photoresist film surface, removed after carrying out thermal crosslinking treatment, photoetching agent pattern is transferred to the surface of PDMS film soft template；Furthermore the PDMS film for having micro-nano pattern is placed on above the silk fiber aqueous solution, can prepares the silk fiber film for having micro-nano structure after drying at room temperature processing；Finally using silk fiber film as template, the patterning of different semiconducting polymer films is realized using nanometer embossing can.There is the preparation method simple step, low cost, large area and operating condition to require low advantage, the organic semiconducting materials for the rigid strong or room temperature patterning that is particularly suitable for use in, have good actual application value.
Description
Technical field
The present invention discloses a kind of polymer patterning preparation method, specifically a kind of patterning based on silk fiber
Semiconducting polymer film preparation method.
Background technology
Since semi-conducting polymer is found, due to the performance of its special electrical and optical aspect, have again plus itself
Have a high molecular soft, transparent, easy to process series of advantages such as low with cost, the research about conducting polymer increasingly by
To the attention of people.As people are to organic semiconductor device miniaturization, the continuous drive of low cost, organic semiconductor device
Development increasingly be unable to do without semiconductive polymer material patterning.Such as in Organic Light Emitting Diode (OLED) technology
In, it is necessary to the luminescent materials of three kinds of primary colours is integrated in one pixel, and the size of each pixel is from micron to nanometer amount
Level development.
The patterning process of semiconducting organic polymer material can be divided into two types, i.e., from bottom to top and from upper and
Under, and patterning method is varied (such as irradiation method, self-assembly method, template etc.), size range covers micron to nanometer
A series of yardsticks, but these methods all have the advantages of respective and weak point, such as the although photoetching skill of relative maturity
Art has been widely used in microelectronic component, but it can not be directly used in conjugated polymer as similar Other substrate materials
Patterning.Here, propose that nanometer flat board method for stamping is widely used by professor Chou of Princeton university, due to
This method has the advantages of high-resolution, high yield and low cost, therefore nano-imprinting method is to construct semiconducting organic polymer
Pattern one of more satisfactory and most application prospect technology.The patterning process that nano-imprinting method provides is one multiple
Miscellaneous reproduction process, and the template for preparing pattern is the important and committed step in whole process.As nanometer embossing is ground
That studies carefully gos deep into, and the template used in nano impression has point of hard template and soft template.Hard template when constructing nano-pattern have compared with
High physical dimension stability and fidelity, but hard template preparation technology flow is complicated, it is expensive to prepare overall price, and in structure
Operating condition is harsher during building micro-nano pattern, careless slightly to produce irreversible damaged template.In order to make up
The deficiency of hard template, soft mode plate technique arise at the historic moment, and soft template is not susceptible to irreversible damage during pattern is prepared,
But the patterning dimensional stability of soft template and prepare pattern process condition and also turn into problem, such as soft template easily receives
The effect of solvent, the rigid of soft template are still very limited etc..Therefore, the preparation of impression block turns into nanometer embossing
The committed step for being widely applied and applying, it is also how to build the key factor of semiconducting organic polymer micro-nano patterning.
So method for preparing template there is an urgent need to preparation process is simple, cost is relatively low, large area is available and operating condition require it is low,
The patterning of application and semiconducting organic polymer to nanometer technology has great significance.
The content of the invention
The advantages of present invention is in order to solve the key issue in above-mentioned technology, while consider soft or hard template and weak point,
A kind of patterned semiconductor polymer thin membrane preparation method based on silk fiber is provided.
The present invention solves technical problem and adopted the following technical scheme that：
Patterned semiconductor polymer thin membrane preparation method based on silk fiber, it is characterised in that comprise the steps of：
1) photoresist solution is uniformly spin-coated on hard substrate S1, photoresist film is formed, using exposure technique in photoetching
The Surface Machining of glue film prepares the micro-nano pattern for the specific structure being pre-designed, and will process the light with micro-nano pattern of preparation
Photoresist film has the primary template of micro-nano structure silk fiber template as preparing；
2) uncrosslinked PDMS solution is coated uniformly on to the surface of the photoresist film with micro-nano pattern, it is overall to place
In in vacuum drying chamber, heat cross-linking is carried out, the cross linking conditions are：Vacuum 0.09MPa, 65 degrees Celsius of heating-up temperature, hand over
Join 30 minutes time；After crosslinking, the soft template that PDMS is formed integrally uniformly is removed from photoresist surface, obtains surface tool
There are the PDMS soft templates of photoresist picture on surface complementary structure micro-nano pattern；The micro-nano pattern on the primary template surface is still complete
The whole PDMS soft templates for existing in order and can continuing on for preparing patterning；
3) there will be the certain density uniform drop film of the silk fiber aqueous solution in silicon chip substrate, silicon chip substrate plays support and made
With the PDMS soft templates with micro-nano pattern are lain on silk fiber drop film immediately after, drying is stored at room temperature, treats moisture
PDMS soft templates are removed after evaporating completely, silk fiber film then is put into vacuum drying chamber dries, and obtains having patterning
Silk fiber template, the PDMS soft templates still can continue prepare patterning silk fiber template；By silk fiber
Template was put into methanol aqueous solution after processing certain time, was put into vacuum drying chamber dried for standby.
4) certain density semi-conducting polymer solution is configured, being prepared using the method for spin coating has certain thickness polymerization
Thing film has micro-nano pattern in forming semiconducting polymer film on hard substrate S2, by silk fiber template prepared by step 3)
One side with lying in semiconducting polymer film surface, integrally insert in nano impression system, selected using nano-imprinting method
After selecting suitable temperature, time and pressure, pressure is discharged, takes out silk fiber template, the semi-conducting polymer patterned
Template；The silk fiber template can be continuing with preparing the semi-conducting polymer template with patterning.
Preferably, the photoresist refers to conventional electron beam exposure apparatus photoresist PMMA.
Preferably, the silk fiber concentration of aqueous solution is 8-20%；The silk fiber concentration of aqueous solution is 8-
20%；The silk fiber water solution preparation method is：It is water-soluble that natural silk is put into the sodium carbonate that mass fraction is 0.06%
In liquid, the degumming process 24h at 100 DEG C, dry at 30 DEG C；With calcium chloride：Absolute ethyl alcohol：Deionized water=1:2:8 (mole
Than) solution carries out dissolving 10h-24h；Dialyse 36h in deionized water, centrifuges；Centrifugate is concentrated into 8h- at 55 DEG C
12h produces the silk fiber aqueous solution.
Preferably, the thickness of the silk fiber film is 300-800um.
Preferably, the methanol aqueous solution volumetric concentration is 90%, immersion of the silk fiber template in methanol solution
Time is 5h.
Preferably, the spin coating rotating speed of the semi-conducting polymer solution is 500 to 7000rpm, gained semi-conductive polymeric
The thickness range of thing film is 30nm to 1um.
Preferably, in the nano-imprinting method temperature be 0 DEG C -150 DEG C, pressure 10-70bar, time 10-
1800s.Compared with the prior art, the present invention has the beneficial effect that：
1st, the inventive method prepares that original photoresist template operation flow is simple, and cost is low.Existing typical hard template
Photoetching technique or electron beam exposure flow are utilized during preparation, the operating procedure being related to includes the structure of photoresist
Etching of patterning, the utilization of metal and template etc., preparation technology flow is complicated, and experiment condition is harsh, each step stream of preparation
Journey, which goes wrong, can all cause the irreversible damage of template preparation, so, it is expensive for production preparation template overall flow,
Cost is very high.It is simple to operate but the flow of photoetching or electron beam exposure photoresist is highly developed, patterning it is stable and
Controllable degree is high.Therefore, the present invention takes into full account this feature of photoresist patterned, and micro-nano knot is carried out just with photoresist
The patterning of structure, the primary template by the photoresist film with patterning directly as the template used in the present invention, save
Time and cost, reduce preparation difficulty.
2nd, the surface of the photoetching glue pattern plate with patterning and PDMS templates can directly be used without any anti-stick processing
Replicated in the patterning of preparation flow, reduce preparation process, reduce preparation cost, improve the stabilization of micro-nano dimensional structure
Property.
3rd, the crucial step of the semi-conducting polymer patterning method disclosed in this invention based on silk fiber is to prepare
High stability and Hi-Fi silk fiber template, and it is important to ensure that micro-nano structure pattern is original from photoresist among this
Duplication of the template to the hi-fi of silk fiber template.According to the flow of conventional preparation template, in micro-nano structure pattern
Interaction in reproduction process between material is it is also contemplated that traditional method is to carry out anti-stick processing, drop to the surface of template
Low-surface-energy, the active force between material is reduced, improve the Hi-Fi duplication and transfer of micro-nano structure pattern.But
In the present invention, it is contemplated that in whole flow process prepare template material between active force situation, the photoetching glue pattern plate of patterning and
The surface of PDMS templates need not carry out anti-stick processing.The water contact angle of photoresist and PDMS material is respectively 90 degree and 150 degree, this
Sample can ensure micro-nano pattern hi-fi from photoresist template duplicating to silk fiber template among, reduce preparation step
Suddenly, preparation cost is reduced, while it also avoid introducing pollution and effect of other anti-stick materials to pattern, improves micro-nano
The stability of dimensional structure.
4th, the silk fiber template post processing changed is simple.Silk fiber film when without any processing, film it is tough
Property it is very good, but rigid is very limited amount of, and such silk fiber film is in nanometer embossing it cannot be guaranteed that micro-
Receive pattern dimensional structure stability, silk fiber template disclosed in this invention will take into account the rigidity and soft template of hard template
Toughness, silk fiber handled, and ensures that silk fiber improves the thin film strength of silk on the premise of having certain toughness.This hair
It is bright that silk fiber film is soaked into the regular hour in certain density methanol aqueous solution, make the crystallization degree of silk fiber big
Big to improve, so as to improve the rigidity of silk fiber film, its modulus of elasticity can reach more than 1.0GPa, and by methanol-water
After solution processing, silk fiber can become insoluble in, can be in air after treatment this guarantees silk fiber template
It is stable in environment to use.
5th, prepared by fibrous template is adapted to large area to produce micro-nano pattern in batch.Why nanometer embossing is most
The reason for patterning method one of application prospect is important is because it has the advantages of high yield low cost, and requires micro-nano
The preparation of pattern can be produced in batch with large area, in the present invention preparation of silk fiber template be especially suitable for large area in batch
Produce micro-nano pattern.From the point of view of the step of constructing, operating process is very simple, and it is thin to be especially suitable for large area pattern silk fiber
Film, and since master pattern, photoetching agent pattern, PDMS patterns and silk fiber pattern can iterative cycles utilize, this
Sample has ensured that the polymer patterning method based on silk fiber template can be constructed in batch with large area in the present invention
Pattern, greatly save time and production cost.
6th, silk fiber template operating condition in semiconductive polymer material patterning process requires low, nano impression bar
Part scope is wide.The process of nanometer embossing structure micro-nano pattern is a complicated process, and is determined most during constructing
The influence factor of the height of whole pattern quality is very more, and this requires that the operating condition of some nano-imprinted patterns is very severe
Carve, but low, nano impression bar is required to operating condition based on the polymer patterning method of silk fiber template in the present invention
Part scope is wide.Specifically have it is following some：Because silk fiber template is not only with very strong rigidity but also with certain toughness, so
The impressing scope that silk fiber template is born is very big, and silk fiber film is non-breakable；Silk fiber film has hard substrate silicon
The support of piece, fiber membrane thickness, so being delivered to silk fiber from silicon chip with can ensure that pressure stability, ensure that again than relatively thin
The dimensional stability and uniformity of pattern are replicated, distribution is equal everywhere on semiconducting polymer film for final gained micro-nano pattern
Even, pattern period and characteristic micro-nano size are consistent with the appropriate section of silk fiber template, play the effect of similar hard template；Silkworm
The rigidity of silk fiber template ensure that micro-nano structure size construct and stability, and its toughness can be to thin polymer film
The level requirements on surface are very low, the characteristics of performance similar to soft template；Silk fiber crystallization degree is big after methanol solution is handled
Big enhancing, becomes to be no longer dissolve in aqueous solvent, can so cause silk fiber template in the atmospheric environment containing certain humidity
Lower use, low is required to ambient humidity；According to the nature and characteristic of silk fiber, silk fiber template prepares the temperature range of pattern
Can be from 0 to 150 degree Celsius, operating space can meet processing temperature scope；Effect of the silk fiber to organic solvent is very weak,
It can so ensure and micro-nano pattern is constructed to silk fiber template as the residual organic solvent in semiconducting polymer film
Do not influence.
Brief description of the drawings
Fig. 1 is the photoresist film primary template schematic diagram for having micro-nano structure pattern.
Fig. 2 is the organic material PDMS film schematic diagram for having micro-nano structure pattern.
Fig. 3 is that PDMS templates are covered on the silk fiber aqueous solution and constructed with micro-nano patterning silk fiber template
Structural representation.
Fig. 4 is the silk fiber template schematic diagram for having micro-nano structure pattern.
Fig. 5 is using silk fiber template as impression block, utilizes nano-imprinting method patterned semiconductor polymer thin
The schematic diagram of film.
Fig. 6 is the schematic diagram of the semiconducting organic polymer film of patterning.
Fig. 7 is silk fiber template SEM figures of the present invention.
Fig. 8 is the semiconducting polymer film SEM figures that the present invention patterns.
Embodiment
Explanation is further explained to technical solution of the present invention by specific embodiment below in conjunction with accompanying drawing.
Embodiment 1
1. the micro-nano pattern of linear is prepared in the Surface Machining of photoresist film using existing electron beam lithography,
250 nanometers of feature structural dimension parameter, that 1 expression is the silicon chip substrate S1 for only playing substrate supports in Fig. 1, and 2 represent photoetching
Glue PMMA (existing commercially available prod).
2. uncrosslinked PDMS solution (commercially available prod) is coated uniformly on to the table of the photoresist film with micro-nano structure
Face, integrally it is positioned in vacuum drying chamber, carries out heat cross-linking, cross linking conditions is：Vacuum 0.09MPa, heating-up temperature 65 are taken the photograph
Family name's degree, crosslinking time 30 minutes；After crosslinking, PDMS soft templates are integrally uniformly removed from photoresist surface, such PDMS is soft
Template surface just has the micro-nano structure pattern of photoresist picture on surface complementary structure, as shown in Fig. 23 represent the organic materials of PDMS
Material.
3. prepare the silk fiber aqueous solution：Natural silk is put into the aqueous sodium carbonate that mass fraction is 0.06%,
The degumming process 24h at 100 DEG C, dry at 30 DEG C；With calcium chloride：Absolute ethyl alcohol：Deionized water=1:2:8 (mol ratio) solution
Carry out dissolving 10h；Dialyse 36h in deionized water, centrifuges；Centrifugate is concentrated into 8h at 55 DEG C, obtains mass concentration 8%
The silk fiber aqueous solution；By silk fiber aqueous solution drop film in silicon chip substrate, by with micro-nano structure patterned surfaces
PDMS soft templates are placed on the silk fiber aqueous solution immediately, drying at room temperature, remove PDMS soft templates, and silk fiber film is put into
Vacuum drying chamber is dried, and silk fiber template then is put into volumetric concentration to be handled 5 hours in 90% methanol aqueous solution, is put into
Vacuum drying chamber dried for standby, obtaining thickness has the silk fiber template of patterning for 300-800um, such as Fig. 3 and Fig. 4, Fig. 7
Shown, 4 be silk fiber material.
4. configuring 20mg/L semi-conducting polymer solution, the poly- of 200 nanometers of thickness is prepared using the method for existing spin coating
Compound film, spin coating rotating speed are 3000rpm, have the one side of micro-nano structure pattern and conducting polymer thin silk fiber template
Film surface opposite is placed, and is integrally inserted in nano impression system, is kept 300s under 150 degrees Celsius and 70bar pressure, is cooled to room
Temperature, pressure is discharged, take out silk fiber template, the patterning process of semi-conducting polymer is just successfully realized, such as Fig. 5 and Fig. 6 institutes
Show, 5 expressions are the hard substrate S2 to be played a supportive role to thin polymer film, and 6 expressions are conducting polymer PTB7 (commercially available productions
Product).
5. repeat above step, it is possible to achieve the batches of semi-conducting polymer micro-nano pattern of large area.As shown in Figure 8.
Embodiment 2
1. the micro-nano pattern of linear, feature are prepared in the Surface Machining of photoresist film using electron beam lithography
200 nanometers of physical dimension, that 1 expression is the silicon chip substrate S1 for only playing substrate supports in Fig. 1, and 2 represent photoresist
PMMA。
2. uncrosslinked PDMS solution is coated uniformly on to the surface of the photoresist film with micro-nano structure, it is overall to place
In in vacuum drying chamber, progress heat cross-linking is whole from photoresist surface by PDMS soft templates after sufficient crosslinking Treatment terminates
Body is uniformly removed, and such PDMS soft modes plate surface just has the micro-nano structure pattern of photoresist picture on surface complementary structure, such as
Shown in Fig. 2,3 represent PDMS organic materials.
3. prepare the silk fiber aqueous solution：Natural silk is put into the aqueous sodium carbonate that mass fraction is 0.06%,
The degumming process 24h at 100 DEG C, dry at 30 DEG C；With calcium chloride：Absolute ethyl alcohol：Deionized water=1:2:8 (mol ratio) solution
Carry out dissolving 11h；Dialyse 36h in deionized water, centrifuges；Centrifugate is concentrated at 55 DEG C, 22h, obtains mass concentration
The 20% silk fiber aqueous solution, by silk fiber aqueous solution drop film in silicon chip substrate, there will be micro-nano structure patterned surfaces
PDMS soft templates be placed on immediately on the silk fiber aqueous solution, drying at room temperature removes PDMS soft templates, and silk fiber film is put
Enter vacuum drying chamber drying, then silk fiber template is put into methanol aqueous solution and handled 5 hours, vacuum drying chamber is put into and does
Dry stand-by, obtaining thickness has the silk fiber template of patterning for 300-800um, and as shown in Figure 3 and Figure 4,4 be silk fiber
Material.
4. configuring 20mg/L semi-conducting polymer solution, the polymer of 800 nanometers of thickness is prepared using the method for spin coating
Film, spin coating rotating speed are 1200rpm, and silk fiber template is had to one side and the conducting polymer thin film face of micro-nano structure pattern
Opposite is placed, and is integrally inserted in nano impression system, and 600s is kept under 0 DEG C and 70bar pressure, discharges pressure, takes out silk
Fibrous template, the patterning process of semi-conducting polymer just successfully realize that as shown in Figure 5 and Figure 6,5 expressions are to polymer
The substrate of glass S2 that film plays a supportive role, 6 expressions are conducting polymer polythiophene (P3HT), and wherein polythiophene (P3HT) is
Commercially available prod.
5. repeat above step, it is possible to achieve the batches of semi-conducting polymer micro-nano pattern of large area.
It should be understood that example as described herein and embodiment can be made only for explanation, those skilled in the art according to it
Various modifications or change, in the case where not departing from spirit of the invention, belong to protection scope of the present invention.
Claims (7)
1. the patterned semiconductor polymer thin membrane preparation method based on silk fiber, it is characterised in that comprise the steps of：
1）Photoresist solution is uniformly spin-coated on hard substrate S1, forms photoresist film, it is thin in photoresist using exposure technique
The Surface Machining of film prepares the micro-nano pattern for the specific structure being pre-designed, and will process the photoresist with micro-nano pattern of preparation
Film has the primary template of micro-nano structure silk fiber template as preparing；
2）Uncrosslinked PDMS solution is coated uniformly on to the surface of the photoresist film with micro-nano pattern, is integrally positioned over true
In empty drying box, heat cross-linking is carried out, the cross linking conditions are：The MPa of vacuum 0.09,65 degrees Celsius of heating-up temperature, during crosslinking
Between 30 minutes；After crosslinking, the soft template that PDMS is formed integrally uniformly is removed from photoresist surface, obtaining surface has light
The PDMS soft templates of photoresist picture on surface complementary structure micro-nano pattern；The micro-nano pattern on the primary template surface still completely has
Sequence exists and can continue on for preparing the PDMS soft templates of patterning；
3）There to be the certain density uniform drop film of the silk fiber aqueous solution in silicon chip substrate, silicon chip substrate plays a supportive role,
The PDMS soft templates with micro-nano pattern are lain on silk fiber drop film immediately after, are stored at room temperature drying, treat that moisture is complete
PDMS soft templates are removed after pervaporation, silk fiber film then is put into vacuum drying chamber dries, and obtains with patterning
Silk fiber template, the PDMS soft templates still can continue to prepare the silk fiber template of patterning；By silk fiber mould
Plate was put into methanol aqueous solution after processing certain time, was put into vacuum drying chamber dried for standby；
4）Certain density semi-conducting polymer solution is configured, being prepared using the method for spin coating has certain thickness polymer thin
Film on hard substrate S2 in forming semiconducting polymer film, by step 3）The silk fiber template of preparation has the one of micro-nano pattern
Face is integrally inserted in nano impression system with lying in semiconducting polymer film surface, utilizes nano-imprinting method to select to close
After suitable temperature, time and pressure, pressure is discharged, takes out silk fiber template, the semi-conducting polymer template patterned；
The silk fiber template can be continuing with preparing the semi-conducting polymer template with patterning.
2. the patterned semiconductor polymer thin membrane preparation method according to claim 1 based on silk fiber, its feature
It is, the photoresist is polymethyl methacrylate（PMMA）.
3. the patterned semiconductor polymer thin membrane preparation method according to claim 1 based on silk fiber, its feature
It is, the silk fiber concentration of aqueous solution is 8-20%；The silk fiber water solution preparation method is：Natural silk is put
Enter in the aqueous sodium carbonate that mass fraction is 0.06 %, the degumming process 24h at 100 DEG C, dried at 30 DEG C；With calcium chloride：
Absolute ethyl alcohol：Deionized water=1:2:8（Mol ratio）Solution carries out dissolving 10h-24h；Dialyse 36h in deionized water, centrifugation point
From；Centrifugate is concentrated more than 8 hours at 55 DEG C and produces the silk fiber aqueous solution.
4. the patterned semiconductor polymer thin membrane preparation method according to claim 1 based on silk fiber, its feature
It is, the thickness of the silk fiber film is 300-800um.
5. the patterned semiconductor polymer thin membrane preparation method according to claim 1 based on silk fiber, its feature
It is, the methanol aqueous solution volumetric concentration is 90%, and soak time of the silk fiber template in methanol solution is 5h.
6. the patterned semiconductor polymer thin membrane preparation method according to claim 1 based on silk fiber, its feature
It is, the spin coating rotating speed of the semi-conducting polymer solution is 500 to 7000rpm, the thickness of gained semiconducting polymer film
Scope is 30nm to 1um.
7. the patterned semiconductor polymer thin membrane preparation method according to claim 1 based on silk fiber, its feature
Be, in the nano-imprinting method temperature be 0 DEG C -150 DEG C, pressure 10-70bar, time 10-1800s.
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| CN109698275A (en) * | 2017-10-23 | 2019-04-30 | 北京赛特超润界面科技有限公司 | A kind of preparation method of small organic molecule crystal pattern array |
| CN113461999B (en) * | 2021-06-02 | 2022-11-01 | 郑州大学 | Method for preparing two-dimensional noble metal micro-nano pattern large-scale array |
| CN115340693B (en) * | 2022-08-15 | 2023-12-08 | 淮北师范大学 | Preparation method of controllable patterning PDMS template |
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