CN105355543A - Preparation method of silk fiber-based patterned semiconductor polymer film - Google Patents
Preparation method of silk fiber-based patterned semiconductor polymer film Download PDFInfo
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- CN105355543A CN105355543A CN201510629271.8A CN201510629271A CN105355543A CN 105355543 A CN105355543 A CN 105355543A CN 201510629271 A CN201510629271 A CN 201510629271A CN 105355543 A CN105355543 A CN 105355543A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Abstract
The invention discloses a preparation method of a silk fiber-based patterned semiconductor polymer film. The method is mainly used for preparing a micro-nano pattern of a semiconductor polymer film material. The method comprises the following steps: firstly, preparing a required complementary size of the micro-nano pattern of a semiconductor polymer film on the surface of a photoresist film by an exposure technology; secondly, coating the surface of the photoresist film with the pattern with an uncrosslinked PDMS material, carrying out a thermal crosslinking treatment, taking down a soft template formed by the PDMS and making a photoresist pattern transferred to the surface of the soft template of a PDMS film; thirdly, putting the PDMS film with the micro-nano pattern on a silk fiber water solution, and preparing the silk fiber film with a micro-nano structure after room-temperature drying treatment; and finally, with the silk fiber film as the template, achieving patterning of different semiconductor polymer films by nanoimprint lithography. The preparation method has the advantages of simplicity in step, low cost, large area, low requirements on operation conditions and the like, is especially applicable to organic semiconductor materials which are high in rigidity or are patterned at a room temperature, and has a good practical application value.
Description
Technical field
The present invention discloses a kind of polymer patterning preparation method, specifically a kind of patterned semiconductor polymer thin membrane preparation method based on silk fiber.
Background technology
Since semi-conducting polymer is found, the performance of the electricity special due to it and optics aspect, add itself have again high molecular soft, transparent, be easy to processing and the series of advantages such as cost is low, the research of associated conductive polymer is more and more subject to people's attention.Along with people are to the continuous drive of organic semiconductor device miniaturization, low cost, the development of organic semiconductor device has more and more be unable to do without the patterning of semiconductive polymer material.Such as in Organic Light Emitting Diode (OLED) technology, need in one pixel integrated for the luminescent material of three kinds of primary colours, and the size of each pixel is developed to nanometer scale by micron.
The patterning process of semiconducting organic polymer material can be divided into two types, namely from bottom to top and from top to bottom, and patterning method varied (such as irradiation method, self-assembly method, template etc.), size range contains a series of yardsticks of micron to nanometer, but these methods all have respective advantages and disadvantages part, although the photoetching technique of such as relative maturity is extensive use in microelectronic component, it can not be directly used in the patterning of conjugated polymer as similar Other substrate materials.At this, propose nanometer flat-plate compressed impression method by professor Chou of Princeton university to be widely used, because the method has the advantage of high-resolution, high yield and low cost, therefore nano-imprinting method constructs more satisfactory and one of the technology with application prospect most of semiconducting organic polymer patterning.The patterning process that nano-imprinting method provides is a complicated reproduction process, and the template preparing pattern is the important and committed step in whole process.Along with going deep into of nanometer embossing research, nano impression template used have hard template and soft template point.Hard template has higher physical dimension stability and fidelity when constructing nano-pattern, but hard template preparation technology flow process is complicated, preparation overall price is expensive, and operating condition is harsher in the process of constructing micro-nano pattern, careless slightlyly irreversible damaged template will be produced.In order to make up the deficiency of hard template, soft template technology is arisen at the historic moment, irreversible damage is not easily there is in soft template in the process preparing pattern, but the patterning dimensional stability of soft template and prepare pattern process condition and also become problem, such as soft template is easily by the effect of organic solvent, and the rigid of soft template is still very limited etc.Therefore, the preparation of impression block becomes the committed step of nanometer embossing spread and application, is also the key factor how building semiconducting organic polymer micro-nano patterning.So method for preparing template is in the urgent need to preparation process is simple, cost is lower, large area can be used and operating condition requires low, has great significance to the application of nanometer technology and the patterning of semiconducting organic polymer.
Summary of the invention
The present invention, in order to solve the key issue in above-mentioned technology, considers the advantages and disadvantages part of soft or hard template simultaneously, provides a kind of patterned semiconductor polymer thin membrane preparation method based on silk fiber.
Technical solution problem of the present invention adopts following technical scheme:
Based on the patterned semiconductor polymer thin membrane preparation method of silk fiber, it is characterized in that, comprise following steps:
1) photoresist solution is evenly spin-coated on hard substrate S1, form photoresist film, utilize exposure technique to prepare the micro-nano pattern of the ad hoc structure designed in advance in the Surface Machining of photoresist film, the photoresist film with micro-nano pattern of processing preparation is had the primary template of micro-nano structure silk fiber template as preparation;
2) uncrosslinked PDMS dissolution homogeneity is coated in the surface of the photoresist film with micro-nano pattern, entirety is positioned in vacuum drying chamber, carries out heat cross-linking, and described cross linking conditions is: vacuum degree 0.09MPa, heating-up temperature 65 degrees Celsius, crosslinking time 30 minutes; After crosslinked, the soft template formed by PDMS is taken off uniformly from photoresist surface integral, obtains the PDMS soft template that surface has photoresist picture on surface complementary structure micro-nano pattern; The still complete orderly existence and the PDMS soft template preparing patterning can be continued on for of the micro-nano pattern on described primary template surface;
3) will have the certain density silk fiber aqueous solution evenly drip film at the bottom of silicon wafer-based on, play a supportive role at the bottom of silicon wafer-based, then immediately the PDMS soft template with micro-nano pattern being lain in silk fiber drips on film, room temperature standing and drying, PDMS soft template is taken off after moisture evaporates completely, then silk fiber film is put into vacuum drying chamber drying, obtain the silk fiber template with patterning, described PDMS soft template still can continue the silk fiber template preparing patterning; Silk fiber template is put into after methanol aqueous solution processes certain hour, put into vacuum drying chamber dried for standby.
4) certain density semi-conducting polymer solution is configured, adopt the preparation of the method for spin coating to have certain thickness thin polymer film and form semiconducting polymer film on hard substrate S2, by step 3) the silk fiber template the prepared one side with micro-nano pattern with lie in semiconducting polymer film surface, entirety is inserted in nano impression system, after utilizing nano-imprinting method to select suitable temperature, time and pressure, release pressure, take out silk fiber template, obtain the semi-conducting polymer template of patterning; Described silk fiber template can continue to use preparation to have the semi-conducting polymer template of patterning.
As preferably, described photoresist refers to the electron beam exposure apparatus photoresist PMMA commonly used.
As preferably, described silk fiber concentration of aqueous solution is 8-20%; Described silk fiber concentration of aqueous solution is 8-20%; Described silk fiber water solution preparation method is: natural silk is put into the aqueous sodium carbonate that mass fraction is 0.06%, degumming process 24h at 100 DEG C, dries at 30 DEG C; With calcium chloride: absolute ethyl alcohol: deionized water=1:2:8 (mol ratio) solution carries out dissolving 10h-24h; Dialyse 36h in deionized water, centrifugation; Namely centrifugate concentrated 8h-12h at 55 DEG C is obtained the silk fiber aqueous solution.
As preferably, the thickness of described silk fiber film is 300-800um.
As preferably, described methanol aqueous solution volumetric concentration is 90%, and the soak time of silk fiber template in methanol solution is 5h.
As preferably, the spin coating rotating speed of described semi-conducting polymer solution is 500 to 7000rpm, and the thickness range of gained semiconducting polymer film is 30nm to 1um.
As preferably, in described nano-imprinting method, temperature is 0 DEG C-150 DEG C, pressure is 10-70bar, and the time is 10-1800s.Compared with the prior art, beneficial effect of the present invention is embodied in:
1, the inventive method prepares original photoresist template operation flow process simply, and cost is low.Existing typical hard template utilizes photoetching technique or electron beam exposure flow process in the process of preparation, the operating procedure related to comprises the etching etc. of the fabrication patterning of photoresist, the utilization of metal and template, preparation technology's flow process is complicated, experiment condition is harsh, each step flow process of preparation goes wrong and all can cause the irreversible damage of Template preparation, so manufacture formwork integral flow process is expensive, cost is very high.But the flow process of photoetching or electron beam exposure photoresist is very ripe, simple to operate, patterning is stable and controllable degree is high.Therefore, the present invention takes into full account this feature of photoresist patterned, only utilizes photoresist to carry out the patterning of micro-nano structure, using there is patterning photoresist film directly as the primary template of the present invention's template used, save time and cost, reduce preparation difficulty.
2, have the photoresist template of patterning and the surface of PDMS template without the need to any anti-stick process, the patterning that can be directly used in preparation flow copies, and decreases preparation process, reduces preparation cost, improves the stability of micro-nano dimensional structure.
3, the step of the semi-conducting polymer patterning method key based on silk fiber disclosed in this invention is preparation high stability and Hi-Fi silk fiber template, and importantly ensures micro-nano structure pattern copying from photoresist primary template to the hi-fi of silk fiber template in the middle of this.According to the flow process of preparation template in the past, interaction in the reproduction process of micro-nano structure pattern between material should be considered, traditional method carries out anti-stick process to the surface of template, reduce surface energy, reduce the active force between material, improve the Hi-Fi of micro-nano structure pattern and copy and shift.But in the present invention, consider the active force situation between the material preparing template in whole flow process, the photoresist template of patterning and the surface of PDMS template are without the need to carrying out anti-stick process.The water contact angle of photoresist and PDMS material is respectively 90 degree and 150 degree, can ensure like this micro-nano pattern hi-fi from photoresist template duplicating to silk fiber template among, decrease preparation process, reduce preparation cost, it also avoid simultaneously and introduce other anti-stick material to the pollution of pattern and effect, improve the stability of micro-nano dimensional structure.
4, the silk fiber template reprocessing changed is simple.Silk fiber film is when without any process, the toughness of film is very good, but rigid is very limited, such silk fiber film can not ensure the stability of the dimensional structure of micro-nano pattern in nanometer embossing, silk fiber template disclosed in this invention will take into account the rigidity of hard template and the toughness of soft template, silk fiber processes, and ensures to improve the thin film strength of silk under silk fiber has the prerequisite of certain toughness.Silk fiber film is soaked the regular hour by the present invention in certain density methanol aqueous solution, the crystallization degree of silk fiber is improved greatly, thus improve the rigidity of silk fiber film, its modulus of elasticity can reach more than 1.0GPa, and after methanol aqueous solution process, silk fiber can become water insoluble, this guarantees silk fiber template and can stablize use in atmospheric environment after treatment.
5, the applicable large area of fibrous template preparation produces micro-nano pattern in batch.Why nanometer embossing is the reason having the patterning method one of application prospect most important is because it has the advantage of high yield low cost, and just requiring the preparation of micro-nano pattern large area to produce in batch, in the present invention, the preparation of silk fiber template is applicable to the micro-nano of large area production in batch pattern very much.From the step of constructing, operating process is very simple, very be applicable to large area pattern silk fiber film, and from master pattern, photoetching agent pattern, PDMS pattern and silk fiber pattern can utilize by iterative cycles, so just can ensure that in the present invention and large area can construct pattern in batch based on the polymer patterning method of silk fiber template, greatly save time and production cost.
6, silk fiber template operating condition in semiconductive polymer material patterning process requires low, and nano impression condition and range is wide.The process that nanometer embossing builds micro-nano pattern is a complicated process, and in the process of constructing, determine that the influencing factor of the height of final pattern quality is very many, this just requires that the operating condition of some nano-imprinted pattern is very harsh, but require low based on the polymer patterning method of silk fiber template to operating condition in the present invention, nano impression condition and range is wide.Specifically have following some: because silk fiber template not only has very strong rigidity but also have certain toughness, so the silk fiber template impression scope of bearing is very large, silk fiber film is not easily broken; Silk fiber film has the support of hard substrate silicon chip, fiber membrane thickness is thinner again, so be delivered to silk fiber from silicon chip while pressure stability can be guaranteed, ensure that dimensional stability and the uniformity of copying pattern, final gained micro-nano pattern is evenly distributed on semiconducting polymer film everywhere, pattern period is consistent with the appropriate section of silk fiber template with characteristic micro-nano size, plays the effect of similar hard template; The rigidity of silk fiber template ensure that constructing of micro-nano structure size and stability, and its toughness can be very low to the level requirements on the surface of thin polymer film, plays the feature of similar soft template; After methanol solution process, silk fiber crystallization degree strengthens greatly, becomes and is no longer dissolved in aqueous solvent, and silk fiber template can be made like this to use under the atmospheric environment containing certain humidity, requires low to ambient humidity; According to the nature and characteristic of silk fiber, the temperature range of silk fiber Template preparation pattern can from 0 to 150 degree Celsius, and operating space can meet processing temperature scope; Silk fiber is very weak to the effect of organic solvent, can ensure that constructing micro-nano pattern as the residual organic solvent in semiconducting polymer film to silk fiber template does not affect like this.
Accompanying drawing explanation
Fig. 1 is the photoresist film primary template schematic diagram having micro-nano structure pattern.
Fig. 2 is the organic material PDMS film schematic diagram having micro-nano structure pattern.
Fig. 3 is that PDMS template covers the structural representation silk fiber aqueous solution constructed and has micro-nano patterning silk fiber template.
Fig. 4 is the silk fiber template schematic diagram having micro-nano structure pattern.
Fig. 5 be using silk fiber template as impression block, utilize the schematic diagram of nano-imprinting method patterned semiconductor thin polymer film.
Fig. 6 is the schematic diagram of the semiconducting organic polymer film of patterning.
Fig. 7 is that silk fiber template SEM of the present invention schemes.
Fig. 8 is that the semiconducting polymer film SEM of patterning of the present invention schemes.
Embodiment
By specific embodiment, explanation is further explained to technical solution of the present invention below in conjunction with accompanying drawing.
Embodiment 1
1. existing electron beam lithography is utilized to prepare the micro-nano pattern of linear in the Surface Machining of photoresist film, feature structural dimension parameter 250 nanometer, 1 that represent is S1 at the bottom of the silicon wafer-based only playing substrate supports effect in FIG, and 2 represent photoresist PMMA (existing commercially available prod).
2. uncrosslinked PDMS solution (commercially available prod) is evenly coated in the surface of the photoresist film with micro-nano structure, entirety is positioned in vacuum drying chamber, carries out heat cross-linking, and cross linking conditions is: vacuum degree 0.09MPa, heating-up temperature 65 degrees Celsius, crosslinking time 30 minutes; After crosslinked, PDMS soft template taken off uniformly from photoresist surface integral, such PDMS soft template surface just has the micro-nano structure pattern of photoresist picture on surface complementary structure, and as shown in Figure 2,3 represent PDMS organic material.
3. prepare the silk fiber aqueous solution: natural silk is put into the aqueous sodium carbonate that mass fraction is 0.06%, degumming process 24h at 100 DEG C, dry at 30 DEG C; With calcium chloride: absolute ethyl alcohol: deionized water=1:2:8 (mol ratio) solution carries out dissolving 10h; Dialyse 36h in deionized water, centrifugation; By centrifugate concentrated 8h at 55 DEG C, obtain the silk fiber aqueous solution of mass concentration 8%; On water-soluble for silk fiber drop film is at the bottom of silicon wafer-based, the PDMS soft template with micro-nano structure patterned surfaces is placed on the silk fiber aqueous solution immediately, drying at room temperature, take off PDMS soft template, silk fiber film puts into vacuum drying chamber drying, then silk fiber template being put into volumetric concentration is 90% methanol aqueous solution process 5 hours, put into vacuum drying chamber dried for standby, obtaining thickness is the silk fiber template that 300-800um has patterning, as shown in Fig. 3 and Fig. 4, Fig. 7,4 is silk fiber material.
4. the semi-conducting polymer solution of 20mg/L is configured, the method of existing spin coating is adopted to prepare the thin polymer film of thickness 200 nanometer, spin coating rotating speed is 3000rpm, the one side that silk fiber template has micro-nano structure pattern is placed face-to-face with conducting polymer thin film, entirety is inserted in nano impression system, 300s is kept under 150 degrees Celsius and 70bar pressure, cool to room temperature, release pressure, take out silk fiber template, the patterning process of semi-conducting polymer just successfully realizes, as shown in Figure 5 and Figure 6, 5 represent be to the passive hard substrate S2 of thin polymer film, 6 represent be conducting polymer PTB7 (commercially available prod).
5. repeat above step, large area semi-conducting polymer micro-nano pattern in batch can be realized.As shown in Figure 8.
Embodiment 2
1. utilize electron beam lithography to prepare the micro-nano pattern of linear in the Surface Machining of photoresist film, feature structural dimension parameter 200 nanometer, 1 that represent is S1 at the bottom of the silicon wafer-based only playing substrate supports effect in FIG, and 2 represent photoresist PMMA.
2. uncrosslinked PDMS dissolution homogeneity is coated in the surface of the photoresist film with micro-nano structure, entirety is positioned in vacuum drying chamber, carry out heat cross-linking, after sufficient crosslinking Treatment terminates, PDMS soft template is taken off uniformly from photoresist surface integral, such PDMS soft template surface just has the micro-nano structure pattern of photoresist picture on surface complementary structure, and as shown in Figure 2,3 represent PDMS organic material.
3. prepare the silk fiber aqueous solution: natural silk is put into the aqueous sodium carbonate that mass fraction is 0.06%, degumming process 24h at 100 DEG C, dry at 30 DEG C, with calcium chloride: absolute ethyl alcohol: deionized water=1:2:8 (mol ratio) solution carries out dissolving 11h, dialyse 36h in deionized water, centrifugation, centrifugate is concentrated at 55 DEG C, 22h, obtain the silk fiber aqueous solution of mass concentration 20%, on water-soluble for silk fiber drop film is at the bottom of silicon wafer-based, the PDMS soft template with micro-nano structure patterned surfaces is placed on the silk fiber aqueous solution immediately, drying at room temperature, take off PDMS soft template, silk fiber film puts into vacuum drying chamber drying, then silk fiber template is put into methanol aqueous solution process 5 hours, put into vacuum drying chamber dried for standby, obtaining thickness is the silk fiber template that 300-800um has patterning, as shown in Figure 3 and Figure 4, 4 is silk fiber material.
4. the semi-conducting polymer solution of 20mg/L is configured, the method of spin coating is adopted to prepare the thin polymer film of thickness 800 nanometer, spin coating rotating speed is 1200rpm, the one side that silk fiber template has micro-nano structure pattern is placed face-to-face with conducting polymer thin film, entirety is inserted in nano impression system, 600s is kept under 0 DEG C and 70bar pressure, release pressure, take out silk fiber template, the patterning process of semi-conducting polymer just successfully realizes, as shown in Figure 5 and Figure 6, 5 represent be to the passive substrate of glass S2 of thin polymer film, 6 represent be conducting polymer polythiophene (P3HT), wherein polythiophene (P3HT) is commercially available prod.
5. repeat above step, large area semi-conducting polymer micro-nano pattern in batch can be realized.
Be to be understood that example as herein described and execution mode only in order to illustrate, those skilled in the art can make various amendment or change according to it, when not departing from Spirit Essence of the present invention, all belong to protection scope of the present invention.
Claims (7)
1., based on the patterned semiconductor polymer thin membrane preparation method of silk fiber, it is characterized in that, comprise following steps:
1) photoresist solution is evenly spin-coated on hard substrate S1, form photoresist film, utilize exposure technique to prepare the micro-nano pattern of the ad hoc structure designed in advance in the Surface Machining of photoresist film, the photoresist film with micro-nano pattern of processing preparation is had the primary template of micro-nano structure silk fiber template as preparation;
2) uncrosslinked PDMS dissolution homogeneity is coated in the surface of the photoresist film with micro-nano pattern, entirety is positioned in vacuum drying chamber, carries out heat cross-linking, and described cross linking conditions is: vacuum degree 0.09MPa, heating-up temperature 65 degrees Celsius, crosslinking time 30 minutes; After crosslinked, the soft template formed by PDMS is taken off uniformly from photoresist surface integral, obtains the PDMS soft template that surface has photoresist picture on surface complementary structure micro-nano pattern; The still complete orderly existence and the PDMS soft template preparing patterning can be continued on for of the micro-nano pattern on described primary template surface;
3) will have the certain density silk fiber aqueous solution evenly drip film at the bottom of silicon wafer-based on, play a supportive role at the bottom of silicon wafer-based, then immediately the PDMS soft template with micro-nano pattern being lain in silk fiber drips on film, room temperature standing and drying, PDMS soft template is taken off after moisture evaporates completely, then silk fiber film is put into vacuum drying chamber drying, obtain the silk fiber template with patterning, described PDMS soft template still can continue the silk fiber template preparing patterning; Silk fiber template is put into after methanol aqueous solution processes certain hour, put into vacuum drying chamber dried for standby.
4) certain density semi-conducting polymer solution is configured, adopt the preparation of the method for spin coating to have certain thickness thin polymer film and form semiconducting polymer film on hard substrate S2, by step 3) the silk fiber template the prepared one side with micro-nano pattern with lie in semiconducting polymer film surface, entirety is inserted in nano impression system, after utilizing nano-imprinting method to select suitable temperature, time and pressure, release pressure, take out silk fiber template, obtain the semi-conducting polymer template of patterning; Described silk fiber template can continue to use preparation to have the semi-conducting polymer template of patterning.
2. the patterned semiconductor polymer thin membrane preparation method based on silk fiber according to claim 1, is characterized in that, described photoresist is polymethyl methacrylate (PMMA).
3. the patterned semiconductor polymer thin membrane preparation method based on silk fiber according to claim 1, it is characterized in that, described silk fiber concentration of aqueous solution is 8-20%; Described silk fiber water solution preparation method is: natural silk is put into the aqueous sodium carbonate that mass fraction is 0.06%, degumming process 24h at 100 DEG C, dries at 30 DEG C; With calcium chloride: absolute ethyl alcohol: deionized water=1:2:8 (mol ratio) solution carries out dissolving 10h-24h; Dialyse 36h in deionized water, centrifugation; Within more than 8 hours, the silk fiber aqueous solution is namely obtained by concentrated at 55 DEG C for centrifugate.
4. the patterned semiconductor polymer thin membrane preparation method based on silk fiber according to claim 1, is characterized in that, the thickness of described silk fiber film is 300-800um.
5. the patterned semiconductor polymer thin membrane preparation method based on silk fiber according to claim 1, it is characterized in that, described methanol aqueous solution volumetric concentration is 90%, and the soak time of silk fiber template in methanol solution is 5h.
6. the patterned semiconductor polymer thin membrane preparation method based on silk fiber according to claim 1, it is characterized in that, the spin coating rotating speed of described semi-conducting polymer solution is 500 to 7000rpm, and the thickness range of gained semiconducting polymer film is 30nm to 1um.
7. the patterned semiconductor polymer thin membrane preparation method based on silk fiber according to claim 1, is characterized in that, in described nano-imprinting method, temperature is 0 DEG C-150 DEG C, pressure is 10-70bar, and the time is 10-1800s.
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| CN109698275A (en) * | 2017-10-23 | 2019-04-30 | 北京赛特超润界面科技有限公司 | A kind of preparation method of small organic molecule crystal pattern array |
| KR20200116694A (en) * | 2019-04-02 | 2020-10-13 | 서울과학기술대학교 산학협력단 | Method of forming pattern film and pattern film formed using the method |
| CN113461999A (en) * | 2021-06-02 | 2021-10-01 | 郑州大学 | Method for preparing two-dimensional noble metal micro-nano pattern large-scale array |
| CN115340693A (en) * | 2022-08-15 | 2022-11-15 | 淮北师范大学 | Preparation method of controllable patterned PDMS template |
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