CN105340016A - 用于具有弱留存时间的存储器单元的刷新方案 - Google Patents

用于具有弱留存时间的存储器单元的刷新方案 Download PDF

Info

Publication number
CN105340016A
CN105340016A CN201480035710.6A CN201480035710A CN105340016A CN 105340016 A CN105340016 A CN 105340016A CN 201480035710 A CN201480035710 A CN 201480035710A CN 105340016 A CN105340016 A CN 105340016A
Authority
CN
China
Prior art keywords
memory
address
refresh
memory address
refresh operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480035710.6A
Other languages
English (en)
Chinese (zh)
Inventor
J·P·金
X·董
J·徐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN105340016A publication Critical patent/CN105340016A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
CN201480035710.6A 2013-06-24 2014-05-05 用于具有弱留存时间的存储器单元的刷新方案 Pending CN105340016A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361838435P 2013-06-24 2013-06-24
US61/838,435 2013-06-24
US14/242,769 2014-04-01
US14/242,769 US20140379978A1 (en) 2013-06-24 2014-04-01 Refresh scheme for memory cells with weak retention time
PCT/US2014/036858 WO2014209498A1 (en) 2013-06-24 2014-05-05 Refresh scheme for memory cells with weak retention time

Publications (1)

Publication Number Publication Date
CN105340016A true CN105340016A (zh) 2016-02-17

Family

ID=52111936

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480035710.6A Pending CN105340016A (zh) 2013-06-24 2014-05-05 用于具有弱留存时间的存储器单元的刷新方案

Country Status (6)

Country Link
US (1) US20140379978A1 (enExample)
EP (1) EP3014625A1 (enExample)
JP (1) JP2016526748A (enExample)
KR (1) KR20160022342A (enExample)
CN (1) CN105340016A (enExample)
WO (1) WO2014209498A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107492392A (zh) * 2016-06-10 2017-12-19 爱思开海力士有限公司 半导体存储器件及其操作方法
CN108959106A (zh) * 2017-05-18 2018-12-07 华为技术有限公司 内存访问方法和装置
WO2025161423A1 (zh) * 2024-02-01 2025-08-07 长鑫科技集团股份有限公司 存储器结构、刷新方法及存储器

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9047978B2 (en) 2013-08-26 2015-06-02 Micron Technology, Inc. Apparatuses and methods for selective row refreshes
CN109378027A (zh) * 2017-08-09 2019-02-22 光宝科技股份有限公司 固态储存装置的控制方法
US10580475B2 (en) 2018-01-22 2020-03-03 Micron Technology, Inc. Apparatuses and methods for calculating row hammer refresh addresses in a semiconductor device
US11152050B2 (en) 2018-06-19 2021-10-19 Micron Technology, Inc. Apparatuses and methods for multiple row hammer refresh address sequences
US11043254B2 (en) 2019-03-19 2021-06-22 Micron Technology, Inc. Semiconductor device having cam that stores address signals
US11264096B2 (en) 2019-05-14 2022-03-01 Micron Technology, Inc. Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits
US11158364B2 (en) 2019-05-31 2021-10-26 Micron Technology, Inc. Apparatuses and methods for tracking victim rows
US11158373B2 (en) 2019-06-11 2021-10-26 Micron Technology, Inc. Apparatuses, systems, and methods for determining extremum numerical values
US11139015B2 (en) 2019-07-01 2021-10-05 Micron Technology, Inc. Apparatuses and methods for monitoring word line accesses
US10832792B1 (en) 2019-07-01 2020-11-10 Micron Technology, Inc. Apparatuses and methods for adjusting victim data
US11386946B2 (en) 2019-07-16 2022-07-12 Micron Technology, Inc. Apparatuses and methods for tracking row accesses
US10943636B1 (en) 2019-08-20 2021-03-09 Micron Technology, Inc. Apparatuses and methods for analog row access tracking
US10964378B2 (en) 2019-08-22 2021-03-30 Micron Technology, Inc. Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation
US11462291B2 (en) 2020-11-23 2022-10-04 Micron Technology, Inc. Apparatuses and methods for tracking word line accesses
US11482275B2 (en) 2021-01-20 2022-10-25 Micron Technology, Inc. Apparatuses and methods for dynamically allocated aggressor detection
US11600314B2 (en) * 2021-03-15 2023-03-07 Micron Technology, Inc. Apparatuses and methods for sketch circuits for refresh binning
US11664063B2 (en) 2021-08-12 2023-05-30 Micron Technology, Inc. Apparatuses and methods for countering memory attacks
US11688451B2 (en) 2021-11-29 2023-06-27 Micron Technology, Inc. Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking
US12165687B2 (en) 2021-12-29 2024-12-10 Micron Technology, Inc. Apparatuses and methods for row hammer counter mat
TWI796924B (zh) * 2022-01-05 2023-03-21 華邦電子股份有限公司 記憶體裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1879173A (zh) * 2003-11-07 2006-12-13 英飞凌科技股份公司 用于具有弱保持的动态单元的刷新
US20070033338A1 (en) * 2005-08-04 2007-02-08 Tsern Ely K Memory with address-differentiated refresh rate to accommodate low-retention storage rows
US20070033339A1 (en) * 2005-08-04 2007-02-08 Best Scott C Memory with refresh cycle donation to accommodate low-retention storage rows

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4453018B2 (ja) * 2005-03-07 2010-04-21 エルピーダメモリ株式会社 半導体記憶装置
KR101879442B1 (ko) * 2011-05-25 2018-07-18 삼성전자주식회사 휘발성 메모리 장치의 리프레쉬 방법, 리프레쉬 어드레스 생성기 및 휘발성 메모리 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1879173A (zh) * 2003-11-07 2006-12-13 英飞凌科技股份公司 用于具有弱保持的动态单元的刷新
US20070033338A1 (en) * 2005-08-04 2007-02-08 Tsern Ely K Memory with address-differentiated refresh rate to accommodate low-retention storage rows
US20070033339A1 (en) * 2005-08-04 2007-02-08 Best Scott C Memory with refresh cycle donation to accommodate low-retention storage rows

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107492392A (zh) * 2016-06-10 2017-12-19 爱思开海力士有限公司 半导体存储器件及其操作方法
CN107492392B (zh) * 2016-06-10 2021-01-01 爱思开海力士有限公司 半导体存储器件及其操作方法
CN108959106A (zh) * 2017-05-18 2018-12-07 华为技术有限公司 内存访问方法和装置
WO2025161423A1 (zh) * 2024-02-01 2025-08-07 长鑫科技集团股份有限公司 存储器结构、刷新方法及存储器

Also Published As

Publication number Publication date
KR20160022342A (ko) 2016-02-29
US20140379978A1 (en) 2014-12-25
EP3014625A1 (en) 2016-05-04
WO2014209498A1 (en) 2014-12-31
JP2016526748A (ja) 2016-09-05

Similar Documents

Publication Publication Date Title
CN105340016A (zh) 用于具有弱留存时间的存储器单元的刷新方案
US9524771B2 (en) DRAM sub-array level autonomic refresh memory controller optimization
US7646660B2 (en) Semiconductor memory, system, and operating method of semiconductor memory
KR102699088B1 (ko) 해머 리프레쉬 동작을 수행하는 메모리 시스템
US8982654B2 (en) DRAM sub-array level refresh
US9607679B1 (en) Refresh control device
US9230634B2 (en) Refresh scheme for memory cells with next bit table
WO2015005976A1 (en) Insertion-override counter to support multiple memory refresh rates
CN117953934A (zh) 存储器装置、存储器系统以及操作存储器装置的方法
CN107301874B (zh) 刷新控制装置
JP2004295986A (ja) 半導体記憶装置
US20240393964A1 (en) Hash filter-based selective-row refresh in memory device
JP2005222574A (ja) 半導体記憶装置
US9583172B1 (en) Self-refresh control device
US9761330B1 (en) Semiconductor device
US20140133253A1 (en) System and Method for Memory Testing
CN120832266A (zh) 具有用于错误检查及擦除报告的交错操作的存储器装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160217