CN105336691A - Preparation method of well region - Google Patents
Preparation method of well region Download PDFInfo
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- CN105336691A CN105336691A CN201410375562.4A CN201410375562A CN105336691A CN 105336691 A CN105336691 A CN 105336691A CN 201410375562 A CN201410375562 A CN 201410375562A CN 105336691 A CN105336691 A CN 105336691A
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- well region
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Abstract
The invention discloses a preparation method of a well region. The method comprises the steps as follows: a substrate is provided; a first photoresist layer which has a first thickness and of which the edge is vertical to the surface of the substrate is formed on the surface of the substrate; second doping ions are injected to form a second doping well region and a second doping diffusion region; the first photoresist layer is removed to form a second photoresist layer; the second photoresist layer completely covers the second doping well region; the first doping ions are injected into the second doping diffusion region to neutralize the second doping ions in the second doping diffusion region; and the first doping ions are injected into the neutralized second doping diffusion region to form a first doping well region. According to the preparation method of the well region, the problems of an overlarge injection range of the second doping well region and an over-small region of the first doping well region are overcome; and the isolation capability of each well region is high.
Description
Technical field
The present invention relates to technical field of semiconductor preparation, particularly relate to a kind of well region preparation method.
Background technology
Metal-oxide-semiconductor (MetalOxideSemiconductorFieldEffectTransistor, MOS type field effect transistor) can be divided into NMOS tube and PMOS by its doping type, and its normal structure as shown in Figure 1.Be PMOS area on the left of Fig. 1, right side is NMOS area.In the manufacture process of chip, need the implantation step successively through P trap (P-well) and N trap (N-well), as shown in Fig. 2 a ~ 2b.The injection scope of N trap and P trap can cross bottom shallow trench STI, as a region in Fig. 2 a.But confluence does not allow too much overlapping, prevent source-drain electrode to substrate leakage.As shown in Figure 2 b, because well region is overlapping, make the developed width a of NW be less than desirable width b, be unfavorable for the isolation effect realizing well region.In traditional preparation process, comparatively dark owing to injecting the degree of depth in well region PW injection process, the photoresist layer (30000 Izods are right) needing thickness thicker is to stop injection ion.So thick photoresist layer under gravity its sidewall has certain gradient as shown in Figure 2 a, and inclined-plane lower zone also has ion implantation, and the actual area of well region NW is diminished, and isolating power declines, and easily causes the electric leakage between source-drain electrode and substrate.
Summary of the invention
Based on this, be necessary for the problems referred to above, the well region preparation method that a kind of isolating power is strong is provided.
A kind of well region preparation method, for the preparation of having the first doping type well region, comprises step: provide substrate; Described substrate surface formed there is the first thickness and edge-perpendicular in the first photoresist layer of described substrate surface, described first photoresist layer covers the region described substrate needing preparation first doping type well region completely; Inject the second doping type ion, do not formed the second doping type well region by described first photoresist layer overlay area over the substrate, formed the second doping type diffusion region by described first photoresist layer overlay area over the substrate; Remove the first photoresist layer, form the second photoresist layer, described second photoresist layer covers described second doping type well region completely; The first doping type ion is injected with the second doping type ion with the second doping type diffusion region in described second doping type diffusion region; Through in and after the second doping type diffusion region inject the first doping type ion, form the first doping type well region.
Wherein in an embodiment, the described first doping type ion that injects in described second doping type diffusion region is with the step of the second doping type ion with the second doping type diffusion region, the energy of the first doping type ion injected is 100 ~ 200Kev, and implantation dosage is 0.5 × 10
13~ 2 × 10
13㎝
-2.
Wherein in an embodiment, described through in and after the second doping type diffusion region inject the first doping type ion, formed in the step of the first doping type well region, the energy of the first doping type ion of injection is greater than 400Kev.
Wherein in an embodiment, described first thickness is 10000 ~ 20000 dusts.
Wherein in an embodiment, described first thickness is 15000 dusts.
Wherein in an embodiment, described first doping type is N-type, and described second doping type is P type.
Wherein in an embodiment, described first doping type is P type, and described second doping type is N-type.
Above-mentioned well region preparation method, there is the first thickness and edge-perpendicular prepares the second doping type well region and the second doping type diffusion region in the first photoresist layer of substrate by being formed, and by carrying out the injection of the first doping type ion at twice so as in the second doping type ion in the second doping type diffusion region to be carried out and after carry out the formation of the first doping type well region again.The the second doping type well region formed and the regional extent of the first doping type well region can strictly be controlled, the second doping type well region is there will not be to inject the problem that scope is excessive and the first doping type well region region is too small, and there is not the second doping type well region and the first doping type well region intersectional region, effectively can control the resistance sizes of the first doping type well region, add the isolating power of the first doping type well region, make the isolating power of well region strong.The ability of the second doping type well region parcel source-drain electrode can be improved simultaneously, avoid the electric leakage between source-drain electrode and substrate.
Accompanying drawing explanation
Fig. 1 is the structural representation of metal-oxide-semiconductor;
Fig. 2 a is the schematic diagram of traditional P trap injection process;
Fig. 2 b is the schematic diagram of traditional N trap injection process;
Fig. 3 is the flow chart of the well region preparation method in an embodiment;
Fig. 4 be embodiment illustrated in fig. 3 in well region preparation method in the cutaway view of device after completing steps S130;
Fig. 5 be embodiment illustrated in fig. 3 in well region preparation method in the cutaway view of device after completing steps S160.
Embodiment
For enabling object of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.In the present description and drawings, reference marker n and p distributing to layer or region represents that these layers or region comprise a large amount of electronics or hole respectively.Further, the concentration of the reference marker+and-expression dopant of distributing to n or p is higher or lower than the concentration be not assigned to like this in the layer of mark.In the description and accompanying drawing of preferred embodiment hereafter, similar assembly is assigned similar reference marker and this place omits its redundant description.
Be illustrated in figure 3 the well region preparation method in an embodiment, comprise the following steps.
Step S110, provides substrate.
Step S120, forms the first photoresist layer at substrate surface.
Substrate surface formed there is the first thickness and edge-perpendicular in the first photoresist layer of substrate surface, the first photoresist layer covers region substrate needing preparation first doping type well region completely, and only covers and need the region of preparation first doping type well region.The thickness of the first photoresist layer is 10000 ~ 20000 dusts.In the present embodiment, the thickness of the first photoresist layer is 15000 dusts.By reducing the thickness (thickness relative to traditional photoresist layer) of the first photoresist layer, the edge-perpendicular of the first photoresist layer, in substrate, can make injection zone and concentration be well controlled when carrying out Doped ions injection.Those skilled in the art are to be understood that, edge-perpendicular in the specification and claims does not refer to proper completely vertical, and refer to that photoresist layer can not cause collapsing of the edges under gravity because of too thick, this subsides and the pattern at photoresist layer edge can be made to be an inclined-plane, and this inclined-plane can cause stopping completely injection ion due to thickness problem, substrate is caused to be injected into the region of ion and the different of expectation.And edge-perpendicular can make substrate be injected into the region of ion and the identical of expectation in the photoresist layer of substrate.
Step S130, injects the second doping type ion, forms the second doping type well region and the second doping type diffusion region.
Inject the second doping type ion at the body structure surface being formed with the first photoresist layer, form the cutaway view of device architecture as shown in Figure 4.Particularly, form the second doping type well region 130 in the first photoresist layer 120 uncovered area, in the first photoresist layer 120 overlay area then because the barrier effect of the first photoresist layer 120 forms the second doping type diffusion region 140.
Step S140, removes the first photoresist layer, forms the second photoresist layer.
First photoresist layer is removed, and forms the second photoresist layer on the surface of the second doping type well region to cover the second doping type well region.The thickness of the second photoresist layer can set as required.
Step S150, injects the first doping type ion with the second doping type ion with the second doping type diffusion region in the second doping type diffusion region.
The first doping type ion is injected under the protection of the second photoresist layer.In the present embodiment, the energy of the first doping type ion of injection is 100 ~ 200Kev, and implantation dosage is 0.5 × 10
13~ 2 × 10
13㎝
-2.By injecting the first doping type ion, can neutralize the second doping type ion of the second doping type diffusion region formed, being convenient in S160, form the first doping type well region, ensureing that the doping situation of the first doping type well region remains unchanged.
Step S160, forms the first doping type well region.
Fig. 5 is the cutaway view of device architecture after completing steps S160.Under the protection of the second photoresist layer to through in and after the second doping type diffusion region inject the first doping type ion, form the first doping type well region 160.Due to the protective effect of the second photoresist layer 150, the first doping type ion can not be injected in the second doping type well region 130 and go, and can well avoid the phenomenon that appearance first doping type well region 160 and the second doping type well region 130 cross bottom STI.In this step, the energy of the first doping type ion of injection should be greater than 400Kev.
In the present embodiment, the first doping type is N-type, and the second doping type is P type.In other examples, the first doping type also can be P type, and the second doping type is N-type.
Above-mentioned well region preparation method, there is the first thickness and edge-perpendicular prepares the second doping type well region and the second doping type diffusion region in the first photoresist layer of substrate by being formed, and by carrying out the first doping type ion implantation at twice so as in the second doping type ion in the second doping type diffusion region to be carried out and after carry out the formation of the first doping type well region again.The the second doping type well region formed and the regional extent of the first doping type well region can strictly be controlled, the second doping type well region is there will not be to inject the problem that scope is excessive and the first doping type well region region is too small, and there is not the second doping type well region and the first doping type well region intersectional region, effectively can control the resistance sizes of the first doping type well region, add the isolating power of the first doping type well region, make the isolating power of well region strong.The ability of the second doping type well region parcel source-drain electrode can be improved simultaneously, avoid the electric leakage between source-drain electrode and substrate.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (7)
1. a well region preparation method, for the preparation of having the first doping type well region, comprises step:
Substrate is provided;
Described substrate surface formed there is the first thickness and edge-perpendicular in the first photoresist layer of described substrate surface, described first photoresist layer covers the region described substrate needing preparation first doping type well region completely;
Inject the second doping type ion, do not formed the second doping type well region by described first photoresist layer overlay area over the substrate, formed the second doping type diffusion region by described first photoresist layer overlay area over the substrate;
Remove the first photoresist layer, form the second photoresist layer, described second photoresist layer covers described second doping type well region completely;
The first doping type ion is injected with the second doping type ion with the second doping type diffusion region in described second doping type diffusion region;
Through in and after the second doping type diffusion region inject the first doping type ion, form the first doping type well region.
2. well region preparation method according to claim 1, it is characterized in that, the described first doping type ion that injects in described second doping type diffusion region is with the step of the second doping type ion with the second doping type diffusion region, the energy of the first doping type ion injected is 100 ~ 200Kev, and implantation dosage is 0.5 × 10
13~ 2 × 10
13㎝
-2.
3. well region preparation method according to claim 1, it is characterized in that, described through in and after the second doping type diffusion region inject the first doping type ion, formed in the step of the first doping type well region, the energy of the first doping type ion of injection is greater than 400Kev.
4. well region preparation method according to claim 1, is characterized in that, described first thickness is 10000 ~ 20000 dusts.
5. well region preparation method according to claim 1, is characterized in that, described first thickness is 15000 dusts.
6. well region preparation method according to claim 1, is characterized in that, described first doping type is N-type, and described second doping type is P type.
7. well region preparation method according to claim 1, is characterized in that, described first doping type is P type, and described second doping type is N-type.
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| CN201410375562.4A CN105336691B (en) | 2014-07-31 | 2014-07-31 | Well region preparation method |
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| CN105336691B CN105336691B (en) | 2018-06-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181622A (en) * | 1996-10-30 | 1998-05-13 | Lg半导体株式会社 | Method of forming well of semiconductor device |
| US6066522A (en) * | 1996-09-05 | 2000-05-23 | Matsushita Electronics Corporation | Semiconductor device and method for producing the same |
| US6440799B1 (en) * | 2001-06-13 | 2002-08-27 | Micron Technology, Inc. | Semiconductor structures, methods of implanting dopants into semiconductor structures and methods of forming CMOS constructions |
| CN101271866A (en) * | 2007-03-22 | 2008-09-24 | 中芯国际集成电路制造(上海)有限公司 | Isolation structure for MOS transistor and method for forming same |
-
2014
- 2014-07-31 CN CN201410375562.4A patent/CN105336691B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066522A (en) * | 1996-09-05 | 2000-05-23 | Matsushita Electronics Corporation | Semiconductor device and method for producing the same |
| CN1181622A (en) * | 1996-10-30 | 1998-05-13 | Lg半导体株式会社 | Method of forming well of semiconductor device |
| US6440799B1 (en) * | 2001-06-13 | 2002-08-27 | Micron Technology, Inc. | Semiconductor structures, methods of implanting dopants into semiconductor structures and methods of forming CMOS constructions |
| CN101271866A (en) * | 2007-03-22 | 2008-09-24 | 中芯国际集成电路制造(上海)有限公司 | Isolation structure for MOS transistor and method for forming same |
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