CN105336568A - Rapid annealing method of power device and the power device - Google Patents
Rapid annealing method of power device and the power device Download PDFInfo
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- CN105336568A CN105336568A CN201410328461.1A CN201410328461A CN105336568A CN 105336568 A CN105336568 A CN 105336568A CN 201410328461 A CN201410328461 A CN 201410328461A CN 105336568 A CN105336568 A CN 105336568A
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Abstract
The invention provides a rapid annealing method of a power device and one power device. The rapid annealing method of the power device comprises the following steps of depositing a metal layer on a first surface of the power device and then depositing a protective layer on the metal layer; carrying out ion implantation on a second surface, carrying out heat annealing processing on the second surface and activating implanted ions; depositing the metal layer on the second surface and removing the protective layer on the first surface. By using a technical scheme of the invention, after a making technology on the first surface of the power device is completed, the protective layer is deposited on the first surface of the power device so that protection to the making technology on the first surface of the power device during an annealing process is realized; power device performance is increased; simultaneously, conventional annealing processing is used and making cost is reduced.
Description
Technical field
The present invention relates to semiconductor device and process manufacturing technology field thereof, in particular to a kind of power device quick annealing method and a kind of power device.
Background technology
In the process making power device, after completing silicon wafer front technique, in order to form emitter at the back side of power device and reduce contact resistance, usually need to carry out thinning back side to silicon wafer, carry out ion implantation again, but after ion implantation, a rapid thermal annealing must be carried out to silicon wafer, this rapid thermal annealing process can repair the damage of injecting ion pair power device and causing, and activates the ion of injection simultaneously.If but carry out thermal anneal process by traditional quick thermal annealing method, the metal level formed in silicon wafer front when carrying out front technique by causing power device melts, damage the front technique of power device, power device is caused to lose efficacy, if but do not carry out quick thermal annealing process, or the temperature of quick thermal annealing process or time do not reach requirement, and the ion that the back side all can be caused to inject cannot use, also namely cannot form injection region, the back side, affect power device performance.
At present, the method adopted to solve this problem uses laser rapid thermal annealers, realizing the power device back side injects ion-activated, owing to have employed laser as thermal source, the method just can complete the activation of injecting ion when the back side annealing temperature of power device is not delivered to power device front metal layer, adopt and carry out rapid thermal annealing to the back side of device in this way, will minimize in its annealing process on the impact of power device front metal layer, its technological process is as follows:
(1), after completing power device front technique, use acid solution or mixed acid solution to clean silicon chip, remove oxygen residual in the oxide of silicon chip back side, silicide, front technical process and/or hydrocarbon.
(2), etching power device the back side, to reduce the thickness of power device.
(3) ion is injected at the back side, to power device.
(4), use laser rapid thermal anneal systems to carry out quick thermal annealing process to silicon chip, activate the ion that the power device back side is injected.
(5), at the back side of power device prepare metal level, complete the making of power device.
Although it is ion-activated very effective to adopt laser quick thermal annealing process to inject the power device back side, because laser annealing apparatus involves great expense, use cost also more common short annealing equipment is high, improves the manufacturing cost of device.Simultaneously in order to reduce the impact on front metal, the time of laser rapid thermal annealing and temperature still can be restricted, and have also had influence on technique flexibility ratio, limit the further lifting of power device performance.
Therefore the manufacturing cost how reducing power device while improving power device performance becomes technical problem urgently to be resolved hurrily at present.
Summary of the invention
The present invention just based on above-mentioned technical problem one of at least; propose a kind of power device quick annealing method; by after the first surface manufacture craft of power device completes; deposit protective layer on the first surface of power device; achieve the protection to manufacture craft on power device first surface in annealing process; improve the performance of power device, use conventional annealing process simultaneously, reduce manufacturing cost.
In view of this, according to an aspect of the present invention, provide a kind of power device quick annealing method, comprising: after the first surface deposited metal of described power device, deposit protective layer on described metal level; Carry out ion implantation in described second face, and thermal anneal process is carried out to described second face, activate the ion injected; In described second deposited metal, remove the protective layer on described first surface.
By after the first surface deposited metal of power device, also namely after the manufacture craft completing first surface, deposit protective layer on the metal layer, make after ion implantation is carried out in the second face of power device, when carrying out the ion of thermal anneal process activation injection, if the metal level of first surface melts, then because the existence of protective layer still can keep the original pattern of this metal level, component failure can not be caused, with use compared with laser rapid thermal anneal er in prior art, without the need to using laser rapid thermal anneal er, reduce manufacturing cost, simultaneously, due to the existence of protective layer, effective protection is formed to the metal level of first surface, make the temperature and time of annealing unrestricted, improve technique flexibility ratio, time and the temperature of annealing can better meet technological requirement, improve the activity ratio of the ion that the power device back side is injected, thus improve the performance of power device.
According to a further aspect in the invention, additionally provide a kind of power device, described power device adopts the power device quick annealing method as described in above-mentioned arbitrary technical scheme to carry out short annealing.
Accompanying drawing explanation
Fig. 1 shows the schematic flow diagram of power device quick annealing method according to an embodiment of the invention.
Embodiment
In order to more clearly understand above-mentioned purpose of the present invention, feature and advantage, below in conjunction with the drawings and specific embodiments, the present invention is further described in detail.It should be noted that, when not conflicting, the feature in the embodiment of the application and embodiment can combine mutually.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from other modes described here and implement, and therefore, the present invention is not limited to the restriction of following public specific embodiment.
Fig. 1 shows the schematic flow diagram of power device quick annealing method according to an embodiment of the invention.
As shown in Figure 1, power device quick annealing method, comprising: step 102 according to an embodiment of the invention, after the first surface deposited metal of described power device, and deposit protective layer on described metal level; Step 104, carries out ion implantation in described second face, and carries out thermal anneal process to described second face, activates the ion injected; Step 106, in described second deposited metal, removes the protective layer on described first surface.
By after the first surface deposited metal of power device, also namely after the manufacture craft completing first surface, deposit protective layer on the metal layer, make after ion implantation is carried out in the second face of power device, when carrying out the ion of thermal anneal process activation injection, if the metal level of first surface melts, then because the existence of protective layer still can keep the original pattern of this metal level, component failure can not be caused, with use compared with laser rapid thermal anneal er in prior art, without the need to using laser rapid thermal anneal er, reduce manufacturing cost, simultaneously, due to the existence of protective layer, effective protection is formed to the metal level of first surface, make the temperature and time of annealing unrestricted, improve technique flexibility ratio, time and the temperature of annealing can better meet technological requirement, improve the activity ratio of the ion that the power device back side is injected, thus improve the performance of power device.
In technique scheme, preferably, described protective layer is silica or silicon nitride or polysilicon.
In this technical scheme; due to after the first surface manufacture craft of power device completes; on the first surface of power device, deposit protective layer is mainly in order to after second injection ion of power device; when second annealing in process to power device, the metal level on protection first surface is indeformable when melting, therefore; protective layer needs high temperature resistant; and not with the metal generation chemical reaction in metal level, when second ion-activated completes, protective layer needs easily to remove.As comparatively preferred embodiment, silica or silicon nitride or polysilicon can be used as protective layer material.
In technique scheme, preferably, the thickness of described protective layer is 1 μm to 10 μm.
In technique scheme, preferably, the thermal source of described thermal anneal process adopts light radiation, and single or double heats described power device.
In this technical scheme, by using light radiation as the thermal source of thermal anneal process, with use laser as compared with thermal source in prior art, reduce manufacturing cost, simultaneously, in thermal anneal process process, can adopt single or double heating power device, to improve the activity ratio injecting ion, single-point or multiple spot carry out thermometric, to control the temperature of power device each point, improve the performance of power device.
In technique scheme, preferably, described before ion implantation is carried out in described second face and after protective layer described in deposit, etch second of described power device, to reduce the thickness of described power device.
In this technical scheme, by before second injection ion of power device, etch second of power device, reduce the thickness of power device, when making second injection ion to power device, the ion of injection can be evenly distributed in second of power device more, simultaneously when annealing in process, be more prone to activate the ion injected, improve the activity ratio injecting ion, thus improve the performance of power device.
In technique scheme, preferably, after protective layer described in deposit, also comprise before second of the described power device of described etching: clean described power device.
In this technical scheme, pollution due to trace also may cause the inefficacy of power device, and therefore, power device in the fabrication process, power device has to pass through strict cleaning, the surface contamination impurity of power device is mainly cleaned in cleaning, and comprise organic substance and inorganic matter, cleaning method has physical cleaning and chemical cleaning, before second of etching power device, power device is cleaned, to improve the rate of finished products of power device, avoids the pollution because of trace to cause power device to lose efficacy.
In technique scheme, preferably, the described power device of described cleaning is specially: use acid solution or mixed acid solution to clean described power device.
In this technical scheme, acid solution or mixed acid solution is used to clean power device, remove oxygen residual in oxide, silicide and the first surface manufacture craft process on power device second and/or hydrocarbon, pollution-free with guaranteed output device surface, improves the rate of finished products of power device.Wherein, acid solution can be nitric acid and/or sulfuric acid.
Describe the power device quick annealing method of embodiments of the invention in detail below in conjunction with specific embodiment, specifically, the concrete steps of the power device quick annealing method of embodiments of the invention are:
Step 1, after completing power device front (being equivalent to the first surface of power device) technique, deposit passivating material protective layer on the metal level of front side of silicon wafer.
Step 2, uses acid solution or mixed acid solution to clean silicon chip, removes oxygen residual in the oxide at the back side, silicide, front technical process and/or hydrocarbon.
Step 3, the back side (being equivalent to the second face of power device) of etching silicon wafer, to reduce the thickness of power device.
Step 4, ion is injected at the back side to power device.
Step 5, uses conventional rapid thermal annealing system to carry out quick thermal annealing process to silicon chip, activates the ion that the power device back side is injected.
Step 6, in the back side deposited metal of power device.
Step 7, removes the passivating material protective layer in power device front, completes the making of power device.
Power device adopts the power device quick annealing method as described in above-mentioned arbitrary technical scheme to carry out short annealing according to an embodiment of the invention.
According to power device of the present invention; by after the first surface manufacture craft of power device completes in the manufacturing process of power device; deposit protective layer on the first surface of power device; achieve the protection to manufacture craft on power device first surface in annealing process; improve the performance of power device; use conventional annealing process simultaneously, reduce manufacturing cost.
These are only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a power device quick annealing method, is characterized in that, comprising:
After the first surface deposited metal of described power device, deposit protective layer on described metal level;
Carry out ion implantation in described second face, and thermal anneal process is carried out to described second face, activate the ion injected;
In described second deposited metal, remove the protective layer on described first surface.
2. power device quick annealing method according to claim 1, is characterized in that, described protective layer is silica or silicon nitride or polysilicon.
3. power device quick annealing method according to claim 2, is characterized in that, the thickness of described protective layer is 1 μm to 10 μm.
4. power device quick annealing method according to claim 1, is characterized in that, the thermal source of described thermal anneal process adopts light radiation, and single or double heats described power device.
5. power device quick annealing method according to claim 1, is characterized in that, described before ion implantation is carried out in described second face and after protective layer described in deposit,
Etch second of described power device, to reduce the thickness of described power device.
6. power device quick annealing method according to claim 5, is characterized in that, after protective layer described in deposit, also comprises before second of the described power device of described etching: clean described power device.
7. power device quick annealing method according to claim 6, is characterized in that, the described power device of described cleaning is specially: use acid solution or mixed acid solution to clean described power device.
8. a power device, is characterized in that, described power device adopts the power device quick annealing method according to any one of claim 1 to 7 to carry out short annealing.
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| CN201410328461.1A CN105336568A (en) | 2014-07-10 | 2014-07-10 | Rapid annealing method of power device and the power device |
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| CN1614792A (en) * | 2003-11-06 | 2005-05-11 | 厦门三安电子有限公司 | Semiconductor device and its preparing method |
| US20050287726A1 (en) * | 2004-06-29 | 2005-12-29 | Paik Woon S | Method of crystallizing amorphous semiconductor thin film and method of fabricating poly-crystalline thin film transistor using the same |
| CN101253602A (en) * | 2005-08-30 | 2008-08-27 | 英特尔公司 | Semiconductor device having metal gate electrode formed on annealed high-k gate dielectric layer |
| CN101419970A (en) * | 2007-10-24 | 2009-04-29 | 富士电机电子技术株式会社 | Semiconductor device with control circuit |
| CN102184854A (en) * | 2011-04-14 | 2011-09-14 | 电子科技大学 | Method for protecting front face metal pattern during thermal annealing of back face of power device |
| CN103157620A (en) * | 2011-12-14 | 2013-06-19 | 北大方正集团有限公司 | Cleaning fluid and cleaning method of silicon wafer back before metalization |
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2014
- 2014-07-10 CN CN201410328461.1A patent/CN105336568A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1346511A (en) * | 1999-04-01 | 2002-04-24 | 因芬尼昂技术股份公司 | Method of processing monocrystalline semiconductor disk and partially processed semiconductor disk |
| CN1614792A (en) * | 2003-11-06 | 2005-05-11 | 厦门三安电子有限公司 | Semiconductor device and its preparing method |
| US20050287726A1 (en) * | 2004-06-29 | 2005-12-29 | Paik Woon S | Method of crystallizing amorphous semiconductor thin film and method of fabricating poly-crystalline thin film transistor using the same |
| CN101253602A (en) * | 2005-08-30 | 2008-08-27 | 英特尔公司 | Semiconductor device having metal gate electrode formed on annealed high-k gate dielectric layer |
| CN101419970A (en) * | 2007-10-24 | 2009-04-29 | 富士电机电子技术株式会社 | Semiconductor device with control circuit |
| CN102184854A (en) * | 2011-04-14 | 2011-09-14 | 电子科技大学 | Method for protecting front face metal pattern during thermal annealing of back face of power device |
| CN103157620A (en) * | 2011-12-14 | 2013-06-19 | 北大方正集团有限公司 | Cleaning fluid and cleaning method of silicon wafer back before metalization |
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Application publication date: 20160217 |