CN105322058A - Manufacturing method of light emitting unit - Google Patents
Manufacturing method of light emitting unit Download PDFInfo
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- CN105322058A CN105322058A CN201410359002.XA CN201410359002A CN105322058A CN 105322058 A CN105322058 A CN 105322058A CN 201410359002 A CN201410359002 A CN 201410359002A CN 105322058 A CN105322058 A CN 105322058A
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Abstract
The invention provides a manufacturing method of a light emitting unit. The method includes the following steps that: a semiconductor structure comprising a plurality of separated light emitting grain is provided, wherein each light emitting grain includes a light-emitting element, a first electrode and a second electrode; encapsulation colloid is formed to cover the light emitting grains; a patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting grains; a substrate is provided, and the encapsulation colloid is located between the substrate and the light-emitting elements of the light emitting grains; a cutting process is carried out in order to cut the semiconductor structure, the patterned metal layer, the encapsulation colloid and the substrate, so that the light emitting unit provided with a series loop, a parallel loop or a series-parallel loop can be defined at least.
Description
Technical field
The invention relates to a kind of luminescence unit, and relate to a kind of manufacture method of luminescence unit especially.
Background technology
Generally speaking, the connection in series-parallel of the luminescence unit be made up of multiple light-emitting diode chip for backlight unit on circuit base plate controls, that the magnitude of voltage that can provide according to power supply and current value have just been planned by series-parallel system when circuit base plate carries out configuration design.But, the huge number of light-emitting diode chip for backlight unit, the magnitude of voltage of meaning namely needed for each light-emitting diode chip for backlight unit and current value are neither together, therefore when luminescence unit is configured on circuit base plate, except being not easy to obtain except best illumination effect, also can because amendment configuration the attractive in appearance and cost viewpoint of effect string base board.
For example, if the initial designs of the configuration of circuit base plate is four strings circuit design in the lump, when carry out conversion efficiency test initial designs need be modified as two strings two and circuit design time, due to configuration complete after be to carry out connection in series-parallel amendment, therefore need by wire jumper, broken string or the mode again making planning configuration, just can reach required connection in series-parallel design, this not only increases cost of manufacture, also increases Production Time.
Summary of the invention
The invention provides a kind of manufacture method of luminescence unit, it is had and is optionally formed different series, parallel or connection in series-parallel loop by cutting process.
The manufacture method of luminescence unit of the present invention, it comprises the following steps.Semiconductor structure is provided, it comprises multiple luminescent grain separated from one another, wherein each luminescent grain comprises light-emitting component, the first electrode and the second electrode, and the first electrode and the second electrode are configured at the same side of light-emitting component, and has interval between the first electrode and the second electrode.Form packing colloid with coated luminescent grain, the wherein light-emitting component of packing colloid each luminescent grain coated, and expose the first electrode and second electrode of each luminescent grain.Form patterned metal layer on first electrode and the second electrode of luminescent grain, wherein patterned metal layer directly contacts with the second electrode with the first electrode of luminescent grain, and is extended on packing colloid by the first electrode and the second electrode.There is provided substrate, wherein packing colloid is between substrate and the light-emitting component of luminescent grain.Carry out cutting process, with cutting semiconductor structure, patterned metal layer, packing colloid and substrate, and at least define the luminescence unit with series loop, shunt circuit or connection in series-parallel loop.
In one embodiment of this invention, doped with fluorescent material in above-mentioned packing colloid, and fluorescent material comprises the combination of yellow fluorescent powder, red fluorescence powder, green emitting phosphor, blue colour fluorescent powder, yttrium aluminium garnet fluorescent powder or above-mentioned material.
In one embodiment of this invention, above-mentioned luminescence unit comprises at least two luminescent grains, and the first electrode of a luminescent grain is electrically connected to the second electrode of another luminescent grain by patterned metal layer, and forms the luminescence unit with series loop.
In one embodiment of this invention, above-mentioned luminescence unit comprises at least two luminescent grains, first electrode of one luminescent grain is electrically connected to the first electrode of another luminescent grain by patterned metal layer, and the second electrode of a luminescent grain is electrically connected to the second electrode of another luminescent grain by patterned metal layer, and form the luminescence unit with shunt circuit.
In one embodiment of this invention, above-mentioned luminescence unit comprises at least four luminescent grains, first electrode of one luminescent grain is electrically connected to the first electrode of another luminescent grain by patterned metal layer, and the second electrode of a luminescent grain and the second electrode of another luminescent grain are electrically connected to the first electrode of another luminescent grain and the first electrode of a luminescent grain again by patterned metal layer, and the second electrode of another luminescent grain is electrically connected to the second electrode of a luminescent grain again by patterned metal layer, and form the luminescence unit with connection in series-parallel loop.
In one embodiment of this invention, the material of above-mentioned patterned metal layer is identical with the material of the first electrode of each luminescent grain and the second electrode.
In one embodiment of this invention, the material of above-mentioned patterned metal layer is different from the material of the first electrode of each luminescent grain and the second electrode.
In one embodiment of this invention, also comprise: provide external circuit, be configured at the below of luminescence unit, luminescence unit is electrically connected by patterned metal layer and external circuit.
In one embodiment of this invention, the second external connector that above-mentioned external circuit comprises loading plate, is configured at the first external connector on loading plate and is configured on loading plate.Luminescence unit is electrically connected by patterned metal layer respectively with the first external connector and the second external connector.
In one embodiment of this invention, above-mentioned external circuit comprises loading plate and corresponding diagram patterning metal level and the patterned line layer be configured on loading plate, and luminescence unit is electrically connected by patterned metal layer and patterned line layer.
In one embodiment of this invention, above-mentioned patterned metal layer and patterned line layer are conformally corresponding to be configured.
In one embodiment of this invention, also comprise: heat sink is provided, be configured between luminescence unit and external circuit.
In one embodiment of this invention, the material of above-mentioned substrate comprises glass, pottery or sapphire.
Based on above-mentioned, the present invention carries out cutting process, with cutting semiconductor structure, patterned metal layer, packing colloid and substrate, and defines the luminescence unit with series loop, shunt circuit or connection in series-parallel loop.Therefore, user can select cutting zone voluntarily according to user demand, and forms the design of different circuit loop.Therefore the manufacture method of luminescence unit of the present invention can allow user have flexibility ratio in better making, and the luminescence unit formed can have the circuit loop design of multiple different aspect.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Fig. 1 to Fig. 5 is the schematic diagram of the manufacture method of a kind of luminescence unit of one embodiment of the invention;
Fig. 6 is the generalized section of a kind of luminescence unit of another embodiment of the present invention;
Fig. 7 A and Fig. 7 B are the generalized section of the different sections of a kind of luminescence unit of another embodiment of the present invention;
Fig. 8 is the generalized section of a kind of luminescence unit of another embodiment of the present invention;
Fig. 9 is the generalized section of a kind of luminescence unit of another embodiment of the present invention;
Figure 10 is the generalized section of a kind of luminescence unit of one more embodiment of the present invention;
Figure 11 is the generalized section of a kind of luminescence unit of a more embodiment of the present invention.
Description of reference numerals:
100a, 100b, 100c, 100d, 100e, 100f, 100g: luminescence unit;
110: semiconductor structure;
120,120a, 120b, 120c, 120d, 120e, 120f, 120g, 120h, 120i, 120j, 120k: luminescent grain;
122: light-emitting component;
124: the first electrodes;
126: the second electrodes;
130: packing colloid;
132: fluorescent material;
140: patterned metal layer;
150: substrate;
160,160 ': external circuit;
162: loading plate;
164a: the first external connector;
164b: the second external connector;
166: heat sink;
168: patterned line layer;
C, D, E: cutting zone;
G: interval.
Embodiment
Fig. 1 to Fig. 5 is the schematic diagram of the manufacture method of a kind of luminescence unit of one embodiment of the invention.For convenience of description, Fig. 1 and Fig. 3 is the schematic top plan view of a kind of semiconductor structure 110 of one embodiment of the invention; Fig. 2 is the generalized section of the line A-A along Fig. 1; Fig. 4 is the generalized section of the line B-B along Fig. 3; Fig. 5 is the generalized section of C '-C ' along the line after the cutting zone C cutting semiconductor structure 110 of Fig. 3.
Please first simultaneously with reference to figure 1 and Fig. 2, according to the manufacture method of the luminescence unit of the present embodiment, first, semiconductor structure 110 is provided, it comprises multiple luminescent grain 120 separated from one another, wherein each luminescent grain 120 comprises light-emitting component 122, first electrode 124 and the second electrode 126, and the first electrode 124 and the second electrode 126 are configured at the same side of light-emitting component 122, and has interval G between the first electrode 124 and the second electrode 126.Herein, as shown in Figure 2, first electrode 124 of the present embodiment and the second electrode 126 are essentially coplanar design, but not as limit.Wherein, the light-emitting component 122 of each luminescent grain 120 can comprise base material (not shown), and the first type semiconductor layer (not shown), luminescent layer (not shown) and the Second-Type semiconductor layer (not shown) that are sequentially configured on base material, but not as limit.And each luminescent grain 120 can be identical or different photochromic, looks closely actual design demand.First electrode 124 directly contacts with the first type semiconductor layer (not shown) and is electrically connected.Second electrode 126 directly contacts with Second-Type semiconductor layer (not shown) and is electrically connected.
Then, refer again to Fig. 1 and Fig. 2, form packing colloid 130 with coated luminescent grain 120, the wherein light-emitting component 122 of packing colloid 130 each luminescent grain 120 coated, and the first electrode 124 and the second electrode 126 exposing each luminescent grain 120 at least partly.
Then, please refer to Fig. 3, form patterned metal layer 140 on first electrode 124 and the second electrode 126 of luminescent grain 120, wherein patterned metal layer 140 directly contacts with the second electrode 126 with the first electrode 124 of luminescent grain 120, and is extended on packing colloid 130 by the first electrode 124 and the second electrode 126.It should be noted that, the material of the patterned metal layer 140 of the present embodiment can be identical with the material of the first electrode 124 of each luminescent grain 120 and the second electrode 126, and wherein the material of the material of patterned metal layer 140 and the first electrode 124 of each luminescent grain 120 and the second electrode 126 can be such as platinum (Pt), gold (Au), silver (Ag), nickel (Ni), titanium (Ti), indium (In), tin (Sn), bismuth (Bi), the alloy of above-mentioned material or the combination of above-mentioned material; Or, the material of patterned metal layer 140 can be different from the material of the first electrode 124 of each luminescent grain 120 and the second electrode 126, wherein the material of patterned metal layer 140 is such as platinum, gold, silver, nickel, titanium, indium, tin, bismuth, the alloy of above-mentioned material or the combination of above-mentioned material, and the material of the first electrode 124 of each luminescent grain 120 and the second electrode 126 is such as platinum, gold, indium, tin, bismuth, the alloy of above-mentioned material or the combination of above-mentioned material.
Afterwards, please refer to Fig. 4, provide substrate 150, wherein packing colloid 130 is between substrate 150 and the light-emitting component 122 of luminescent grain 120.Herein, the material of the present embodiment substrate 150 is such as glass, polymethyl methacrylate, pottery, sapphire or other light-transmitting materials, its object is to supports semiconductor structure 110, and contributes to bright dipping and the light guide effect of luminescent grain 120.Preferably, the material of substrate 150 is glass, and the characteristic of easily cutting can make process more simple and easy.
Finally, please also refer to Fig. 3 and Fig. 5, carry out cutting process, with cutting semiconductor structure 110, patterned metal layer 140, packing colloid 130 and substrate 150, and at least define the luminescence unit 100a with series loop, shunt circuit or connection in series-parallel loop.Specifically, the cutting process of the present embodiment cuts along the cutting zone C in Fig. 3, now formed luminescence unit 100a comprises at least two luminescent grains and (four luminescent grains is schematically shown in Fig. 5, and for convenience of description for the purpose of, be denoted as 120a, 120b, 120c, 120d respectively).First electrode 124 of luminescent grain 120a is electrically connected to second electrode 126 of luminescent grain 120b by patterned metal layer 140; First electrode 124 of luminescent grain 120b is electrically connected to second electrode 126 of luminescent grain 120c by patterned metal layer 140, first electrode 124 of luminescent grain 120c is electrically connected to second electrode 126 of luminescent grain 120d by patterned metal layer 140, and forms the luminescence unit 100a with series loop (i.e. four strings).
Although be form the luminescence unit 100a with series loop (namely four go here and there) after above-mentioned cutting, in other embodiments, also change cutting zone voluntarily by the demand of user and form the luminescence unit of different circuit loop.
For example, please also refer to Fig. 3 and Fig. 6, wherein Fig. 6 is the generalized section of D '-D ' along the line after the cutting zone D cutting of Fig. 3.The cutting process of the present embodiment cuts along the cutting zone D in Fig. 3, now formed luminescence unit 100b comprises at least two luminescent grains and (three luminescent grains is schematically shown in Fig. 6, and for convenience of description for the purpose of, be denoted as 120e, 120f, 120g respectively).First electrode 124 of first electrode 124 of luminescent grain 120e, first electrode 124 of luminescent grain 120f and luminescent grain 120g is electrically connected to each other by patterned metal layer 140, and second electrode 126 of second electrode 126 of luminescent grain 120e, luminescent grain 120f and second electrode 126 of luminescent grain 120g are electrically connected to each other by patterned metal layer 140, and form the luminescence unit 100b with shunt circuit (namely three also).
Or please also refer to Fig. 3, Fig. 7 A and Fig. 7 B, wherein Fig. 7 A and Fig. 7 B is the generalized section after cutting along the cutting zone E of Fig. 3, and Fig. 7 A is the generalized section of the line I-I along Fig. 3, and Fig. 7 B is the generalized section of the line II-II along Fig. 3.The cutting process of the present embodiment cuts along the cutting zone E in Fig. 3, now formed luminescence unit 100c comprises at least four luminescent grains and (four luminescent grains is schematically shown in the cutting zone E of Fig. 3, and for convenience of description for the purpose of, be denoted as 120h, 120i, 120j, 120k respectively).Second electrode 126 of luminescent grain 120h is electrically connected to second electrode 126 (please refer to Fig. 3 and Fig. 7 B) of luminescent grain 120k by patterned metal layer 140, and first electrode 124 of luminescent grain 120h is electrically connected to the second electrode 126 of 120i luminescent grain and second electrode 126 (please refer to Fig. 3 and Fig. 7 A) of luminescent grain 120j with first electrode 124 of luminescent grain 120k by patterned metal layer 140, and first electrode 124 of luminescent grain 120i is electrically connected to first electrode 124 of luminescent grain 120j by patterned metal layer 140, and form the luminescence unit 100c with connection in series-parallel loop (namely two strings two also).
In other unshowned embodiments, those skilled in the art is when the explanation that can refer to previous embodiment, according to actual demand, and select the cutting zone on semiconductor structure 110 voluntarily, and circuit loop needed for being formed (as two strings three also, four strings in the lump etc.) luminescence unit.
In addition, it should be noted that the patterned metal layer 140 of the present embodiment is covered on the first electrode 124 of luminescent grain 120 and the second electrode 126 and extends on partial encapsulation colloid 130.That is, patterned metal layer 140 can increase the first electrode 124 of luminescent grain 120 and the contact area of the second electrode 126, luminescence unit 100a, 100b, 100c of being formed after being conducive to cutting and external circuit are assembled, and can effectively improve contraposition precision and packaging efficiency.
In addition, please refer to Fig. 8, wherein Fig. 8 is the generalized section of a kind of luminescence unit of another embodiment of the present invention.The luminescence unit 100a of luminescence unit 100d and Fig. 5 of the present embodiment is similar, only the two Main Differences part is: the glow color that the present embodiment provides to change luminescence unit 100d, therefore in packing colloid 130 doped with fluorescent material 132, wherein fluorescent material 132 is such as the combination of yellow fluorescent powder, red fluorescence powder, green emitting phosphor, blue colour fluorescent powder, yttrium aluminium garnet fluorescent powder or above-mentioned material.
Fig. 9 is the generalized section of a kind of luminescence unit of another embodiment of the present invention.Please refer to Fig. 9, the manufacture method of the luminescence unit 100e of the present embodiment also comprises provides external circuit 160, wherein external circuit 160 is configured at the below of luminescence unit 100e, and luminescence unit 100e is electrically connected by patterned metal layer 140 and external circuit 160.For example, the external circuit 160 of the present embodiment is such as circuit base plate, and it comprises loading plate 162, first external connector 164a and the second external connector 164b.In more detail, luminescence unit 100e is electrically connected by patterned metal layer 140 respectively with the first external connector 164a and the second external connector 164b.Because luminescent grain 120a, 120b, 120c and 120d are electrically connected by patterned metal layer 140, therefore only need after the first external connector 164a of external circuit 160 and the second external connector 164b leads to upper positive electricity and negative electricity respectively, luminescence unit 100e can be driven and produce light, also need not layout circuit on external circuit 160 more in addition, can have and preferably use elasticity.
Specifically, as shown in Figure 10, in another embodiment, luminescence unit 100f can also comprise heat sink 166, and wherein heat sink 166 is configured between luminescence unit 100f and external circuit 160, the radiating efficiency that can effectively increase, but not as limit.
Figure 11 is the generalized section of a kind of luminescence unit of a more embodiment of the present invention.Please also refer to Fig. 9 and Figure 11, the luminescence unit 100g of the present embodiment and the different part of luminescence unit 100e of Fig. 9 embodiment are: the external circuit 160 ' of the present embodiment comprises loading plate 162 and corresponding diagram patterning metal level 140 and the patterned line layer 168 be configured on loading plate 162, and luminescence unit 100g is electrically connected by patterned metal layer 140 and patterned line layer 168.Preferably, wherein patterned metal layer 140 and patterned line layer 168 are conformally corresponding is configured on loading plate 162, can have larger area of dissipation and contraposition area, but not as limit.
In sum, the present invention carries out cutting process, with cutting semiconductor structure, patterned metal layer, packing colloid and substrate, and defines the luminescence unit with series loop, shunt circuit or connection in series-parallel loop.Therefore, user can select cutting zone voluntarily according to user demand, and forms the design of different circuit loop.Therefore the manufacture method of luminescence unit of the present invention can allow user have flexibility ratio in better making, and the luminescence unit formed can have the circuit loop design of multiple different aspect.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (13)
1. a manufacture method for luminescence unit, is characterized in that, comprising:
Semiconductor structure is provided, comprise multiple luminescent grain separated from one another, wherein respectively this luminescent grain comprises light-emitting component, the first electrode and the second electrode, and this first electrode and this second electrode are configured at the same side of this light-emitting component, and between this first electrode and this second electrode, there is interval;
Form packing colloid with those luminescent grains coated, wherein this light-emitting component of coated respectively this luminescent grain of this packing colloid, and expose this first electrode and this second electrode of respectively this luminescent grain;
Form patterned metal layer on those first electrodes and those the second electrodes of those luminescent grains, wherein this patterned metal layer directly contacts with those second electrodes with those first electrodes of those luminescent grains, and extends on this packing colloid by those first electrodes and those the second electrodes;
There is provided substrate, wherein this packing colloid is between this substrate and those light-emitting components of those luminescent grains; And
Carry out cutting process, to cut this semiconductor structure, this patterned metal layer, this packing colloid and this substrate, and at least define the luminescence unit with series loop, shunt circuit or connection in series-parallel loop.
2. the manufacture method of luminescence unit according to claim 1, it is characterized in that, doped with fluorescent material in this packing colloid, and this fluorescent material comprises the combination of yellow fluorescent powder, red fluorescence powder, green emitting phosphor, blue colour fluorescent powder, yttrium aluminium garnet fluorescent powder or above-mentioned material.
3. the manufacture method of luminescence unit according to claim 1, it is characterized in that, this luminescence unit comprises at least two those luminescent grains, this first electrode of one this luminescent grain is electrically connected to this second electrode of another this luminescent grain by this patterned metal layer, and forms this luminescence unit with this series loop.
4. the manufacture method of luminescence unit according to claim 1, it is characterized in that, this luminescence unit comprises at least two those luminescent grains, this first electrode of one this luminescent grain is electrically connected to this first electrode of another this luminescent grain by this patterned metal layer, and this second electrode of this luminescent grain is electrically connected to this second electrode of another this luminescent grain by this patterned metal layer, and form this luminescence unit with this shunt circuit.
5. the manufacture method of luminescence unit according to claim 1, it is characterized in that, this luminescence unit comprises at least four those luminescent grains, this first electrode of one this luminescent grain is electrically connected to this first electrode of another this luminescent grain by this patterned metal layer, and this second electrode of this second electrode of this luminescent grain and another this luminescent grain is electrically connected to this first electrode of this luminescent grain another and this first electrode of this luminescent grain again by this patterned metal layer, and this second electrode of this luminescent grain another is electrically connected to this second electrode of this luminescent grain again by this patterned metal layer, and form this luminescence unit with this connection in series-parallel loop.
6. the manufacture method of luminescence unit according to claim 1, is characterized in that, the material of this patterned metal layer is with respectively this first electrode of this luminescent grain is identical with the material of this second electrode.
7. the manufacture method of luminescence unit according to claim 1, is characterized in that, the material of this patterned metal layer is from respectively this first electrode of this luminescent grain is different with the material of this second electrode.
8. the manufacture method of luminescence unit according to claim 1, is characterized in that, also comprises:
There is provided external circuit, be configured at the below of this luminescence unit, wherein this luminescence unit is electrically connected by this patterned metal layer and this external circuit.
9. the manufacture method of luminescence unit according to claim 8, it is characterized in that, the second external connector that this external circuit comprises loading plate, is configured at the first external connector on this loading plate and is configured on this loading plate, this luminescence unit is electrically connected with this first external connector and this second external connector respectively by this patterned metal layer.
10. the manufacture method of luminescence unit according to claim 8, it is characterized in that, this external circuit comprises loading plate and to should patterned metal layer and the patterned line layer be configured on this loading plate, this luminescence unit be electrically connected by this patterned metal layer and this patterned line layer.
The manufacture method of 11. luminescence units according to claim 10, is characterized in that, this patterned metal layer and this patterned line layer are conformally corresponding to be configured.
The manufacture method of 12. luminescence units according to claim 8, is characterized in that, also comprise:
Heat sink is provided, is configured between this luminescence unit and this external circuit.
The manufacture method of 13. luminescence units according to claim 1, is characterized in that, the material of this substrate comprises glass, pottery or sapphire.
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| CN201410359002.XA CN105322058A (en) | 2014-07-25 | 2014-07-25 | Manufacturing method of light emitting unit |
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| CN201410359002.XA CN105322058A (en) | 2014-07-25 | 2014-07-25 | Manufacturing method of light emitting unit |
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