CN105301472A - Space single-particle turning rate measurement system - Google Patents
Space single-particle turning rate measurement system Download PDFInfo
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- CN105301472A CN105301472A CN201510741909.7A CN201510741909A CN105301472A CN 105301472 A CN105301472 A CN 105301472A CN 201510741909 A CN201510741909 A CN 201510741909A CN 105301472 A CN105301472 A CN 105301472A
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Abstract
The invention discloses a space single-particle turning rate measurement system. A member to be detected is connected to a CPU through a socket; a radiation resistance SRAM is connected to a CPU which is connected to a microcomputer; a radiation plate is positioned on sides of the member to be detected and the radiation resistance; before the radiation plate radiates, the CPU synchronically writes the same data into each byte of the radiation resistance SRAM and the member to be detected; in the radiation process of the radiation plate, the CPU circularly monitors the data stored in all units of the member to be detected, compares the data of the member to be detected with the data in the radiation resistance SRAM, performs statistics on the bits and the address of various bits and outputs the result obtained by the CPU to the microcomputer to display. The space single-particle turning rate measurement system can perform evaluation on the SEU reinforcement resistance technology in the practical environment, can perform monitoring verification on the SEU reinforcement resistance technology and can perform measurement on the single-particle turning rate of various members under various radiation environments.
Description
Technical field
The invention belongs to the fields of measurement of radioresistance technical merit, relate to the measuring system of a kind of space single event upset rate.
Background technology
There is a large amount of high energy particle in space radiation environment, can cause semiconductor devices generation single particle effect, has a strong impact on reliability and the life-span of product.When a high energy particle is injected in semiconductor, its can by with electronics and nuclear collision off-energy, ionize out a large amount of electron-hole pair simultaneously.If ionization occurs in the sensitizing range of circuit, as reverse biased pn junction, most of electron-hole pairs that its ionization produces by electric field separates, will be collected by drift, diffusion, funnelling or ion shunt effect.When the electric charge collected exceedes lowest charge (critical charge) needed for the change of circuit node logic state, single-particle inversion (SEU) will occur.
Primary particle inversion resistant reinforcing safeguards technique is the technology summation guaranteeing that element, module, subsystem or system normally can work under particular radiation environment, comprises technology, method for organizing, document management, process management etc.In a project, Radiation hardness assurance technology consider more late, so pinpoint the problems caused impact and cost also larger.To the checking of reinforcement measure in Radiation hardness assurance technology, judge whether radiation resisting capability of device satisfies the demands very important.The assessment to anti-single particle overturn reinforcement technique is carried out at present mainly through calculating single event upset rate.At present, at home and abroad association area does not measure the description of single event upset rate.
Summary of the invention
(1) goal of the invention
The object of the present invention is to provide a kind of system can measuring chip single event upset rate under particular space radiation environment, thus be that primary particle inversion resistant reinforcement technique proposes a kind of effective appraisal procedure.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides the measuring system of a kind of space single event upset rate, it comprises: device under test, Flouride-resistani acid phesphatase SRAM, irradiation plate, CPU and microcomputer; Device under test connects CPU by socket, and Flouride-resistani acid phesphatase SRAM connects CPU, CPU connected with computer, and irradiation plate is arranged on device under test and Flouride-resistani acid phesphatase SRAM side; At irradiation plate predose, CPU is synchronized to Flouride-resistani acid phesphatase SRAM and each byte of device under test writes identical data; In irradiation plate irradiation process, the data stored in all unit of CPU circulatory monitoring device under test, and compared with data in Flouride-resistani acid phesphatase SRAM, add up figure place and the address of not coordination, the result obtained by CPU outputs in microcomputer and shows; If device under test is not identical with data in Flouride-resistani acid phesphatase SRAM, then there occurs single-particle inversion, record and add up upset number and address thereof, obtaining total upset number and the upset situation in a certain moment.
Wherein, connected between described CPU and microcomputer by serial ports, cable between the two meets the distance needs between irradiation space and microcomputer position.
Wherein, described irradiation plate radiation can comprise the various high energy particles of heavy ion, high energy proton, can separately or mixed radiation, and radiation parameter is adjustable as required.
Wherein, described device under test is semiconductor devices; Described Flouride-resistani acid phesphatase SRAM Flouride-resistani acid phesphatase upset rate is zero.
(3) beneficial effect
The measuring system of the space single event upset rate that technique scheme provides, can resist SEU reinforcement technique and assess in actual environment; SEU reinforcement technique can be resisted and carry out Real-Time Monitoring checking; The single event upset rate of multiple device under multiple radiation environment can be measured.
Accompanying drawing explanation
Fig. 1 is the theory diagram of the measuring system of embodiment of the present invention space single event upset rate.
Embodiment
For making object of the present invention, content and advantage clearly, below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.
With reference to shown in Fig. 1, the measuring system of the present embodiment space single event upset rate is under irradiation plate radiation environment, measure the measuring system of device under test single event upset rate on socket, it comprises device under test, Flouride-resistani acid phesphatase SRAM (StaticRAM, static RAM), irradiation plate, CPU and microcomputer; Device under test connects CPU by socket, and Flouride-resistani acid phesphatase SRAM connects CPU, CPU connected with computer, and irradiation plate is arranged on device under test and Flouride-resistani acid phesphatase SRAM side; At irradiation plate predose, CPU is synchronized to Flouride-resistani acid phesphatase SRAM and each byte of device under test writes identical data, to write data be " AA " data, the binary data that namely " 0 " and " 1 " is spaced; In irradiation plate irradiation process, the data stored in all unit of CPU circulatory monitoring device under test, and compared with data in Flouride-resistani acid phesphatase SRAM, add up figure place and the address of not coordination, the result obtained by CPU outputs in microcomputer and shows.If device under test is identical with data in Flouride-resistani acid phesphatase SRAM, namely thinks and there occurs single-particle inversion, record and add up upset number and address thereof, total upset number can be obtained, the upset situation in a certain moment can be obtained again.
Connected by serial ports between CPU and microcomputer, usual connecting cable is set to tens meters long, to meet the long distance needs between irradiation space and microcomputer position.
The radiation-curable various high energy particles comprising heavy ion and high energy proton etc. of irradiation plate described in the present embodiment, can separately or mixed radiation, and the parameters such as radiation dose can be arranged as required.Before starting to measure Single Event Upset rate, the parameters such as the radiating particle of setting irradiation plate and radiation dose.
In the present embodiment, device under test is connected by socket, device under test is semiconductor devices, the semiconductor devices of this socket adaptive multiple encapsulation as much as possible, socket is that the test of semiconductor devices brings sizable facility, socket described in the present embodiment depends on the encapsulation of device under test, such as, chip to be measured is BGA484 encapsulation, and so in design, socket is just corresponding construction; Then CPU synchronously reads and writes and cycle detection this device, by the result of detection and the comparison of benchmark single event upset rate, thus obtain the single event upset rate of device under test under this kind of radiation environment, judge whether device primary particle inversion resistant irradiation technique used meets the requirements.
It is zero that Flouride-resistani acid phesphatase SRAM described in the present embodiment realizes Flouride-resistani acid phesphatase upset rate substantially.SRAM is the key components of space electronic system, and nearly all electronic system all uses SRAM memory as data storage carrier.But SRAM memory belongs to single particle effect Sensitive Apparatus, single-particle inversion can cause loss of data and instruction to make mistakes.Along with SRAM memory integrated level improves constantly, device feature size is more and more less, and critical charge is fewer and feweri, and single particle effect is further serious.
As can be seen from technique scheme, the present invention is by adopting irradiation plate irradiation Flouride-resistani acid phesphatase SRAM and device under test, and internal data both detecting by means of CPU also contrasts, to determine the single event upset rate of device under test, simple to operate, accuracy rate is high, applied widely.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and distortion, these improve and distortion also should be considered as protection scope of the present invention.
Claims (4)
1. a measuring system for space single event upset rate, is characterized in that, comprising: device under test, Flouride-resistani acid phesphatase SRAM, irradiation plate, CPU and microcomputer; Device under test connects CPU by socket, and Flouride-resistani acid phesphatase SRAM connects CPU, CPU connected with computer, and irradiation plate is arranged on device under test and Flouride-resistani acid phesphatase SRAM side; At irradiation plate predose, CPU is synchronized to Flouride-resistani acid phesphatase SRAM and each byte of device under test writes identical data; In irradiation plate irradiation process, the data stored in all unit of CPU circulatory monitoring device under test, and compared with data in Flouride-resistani acid phesphatase SRAM, add up figure place and the address of not coordination, the result obtained by CPU outputs in microcomputer and shows; If device under test is not identical with data in Flouride-resistani acid phesphatase SRAM, then there occurs single-particle inversion, record and add up upset number and address thereof, obtaining total upset number and the upset situation in a certain moment.
2. the measuring system of space as claimed in claim 1 single event upset rate, it is characterized in that, connected between described CPU and microcomputer by serial ports, cable between the two meets the distance needs between irradiation space and microcomputer position.
3. the measuring system of space as claimed in claim 1 single event upset rate, is characterized in that, described irradiation plate radiation can comprise the various high energy particles of heavy ion, high energy proton, can separately or mixed radiation, and radiation parameter is adjustable as required.
4. the measuring system of the space single event upset rate according to any one of claim 1-3, is characterized in that, described device under test is semiconductor devices; Described Flouride-resistani acid phesphatase SRAM Flouride-resistani acid phesphatase upset rate is zero.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109991531A (en) * | 2019-03-28 | 2019-07-09 | 西北核技术研究所 | Atmospheric neutron single particle effect section gauge system and method under the conditions of low probability |
| CN112951314A (en) * | 2021-02-01 | 2021-06-11 | 上海航天计算机技术研究所 | Loadable general RAM self-testing method based on TSC695 processor |
| CN115356609A (en) * | 2022-08-11 | 2022-11-18 | 中国科学院近代物理研究所 | Method and system for improving single event upset resistance effect of active delay filter device |
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| JPS61262633A (en) * | 1985-05-17 | 1986-11-20 | Dan Kagaku:Kk | Apparatus for measuring suspended fine particles |
| JP2008004597A (en) * | 2006-06-20 | 2008-01-10 | Canon Inc | Charged particle beam drawing method, aligner, and process for fabricating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109991531A (en) * | 2019-03-28 | 2019-07-09 | 西北核技术研究所 | Atmospheric neutron single particle effect section gauge system and method under the conditions of low probability |
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| CN112951314A (en) * | 2021-02-01 | 2021-06-11 | 上海航天计算机技术研究所 | Loadable general RAM self-testing method based on TSC695 processor |
| CN115356609A (en) * | 2022-08-11 | 2022-11-18 | 中国科学院近代物理研究所 | Method and system for improving single event upset resistance effect of active delay filter device |
| CN115356609B (en) * | 2022-08-11 | 2023-05-26 | 中国科学院近代物理研究所 | Method and system for improving single event upset resistance effect of active delay filter |
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