CN105274525A - Etching solution composition and manufacturing method of array substrate for liquid crystal display using the same - Google Patents
Etching solution composition and manufacturing method of array substrate for liquid crystal display using the same Download PDFInfo
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- CN105274525A CN105274525A CN201510342163.2A CN201510342163A CN105274525A CN 105274525 A CN105274525 A CN 105274525A CN 201510342163 A CN201510342163 A CN 201510342163A CN 105274525 A CN105274525 A CN 105274525A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses an etching solution composition, which comprises a metal layer oxidizing agent, a fluorine compound, a chelating agent and water as the balance. The chelating agent contains specific repetitive units. Meanwhile, for 1g of the etching solution composition, the chelating agent contains 0.6 mmol to 2 mmol of repetitive units. The invention also provides a manufacturing method of an array substrate for a liquid crystal display using the same.
Description
Technical field
The present invention relates to metal level etchant and use it to manufacture the method for array substrate for liquid crystal display.
Background technology
Along with the flat-panel monitor of such as LCD, PDP and OLED particularly TFT-LCD becomes large with screen, extensively rethink the individual layer adopting copper or copper alloy composition, or adopt copper or copper alloy/other metal, the alloy of other metal or metal oxide be greater than two-layer multilayer, to reduce routing resistance and to improve the adhesivity with dielectric silicon layer.Such as, copper/molybdenum layer, copper/titanium layer or copper/molybdenum-titanium layer can be formed as the grid line of TFT-LCD and the source/drain line of composition data line, and may contribute to expanding indicating meter screen.Therefore, exploitation is needed to have the composition of superior etch characteristic for etching these metal levels comprising base copper.
As etch combination above-mentioned, usually use hydrogen peroxide and amino acids etching solution, hydrogen peroxide and phosphoric acid class etching solution, hydrogen peroxide and polyethylene glycols etching solution etc.
As an example, Korean patent application publication No. 10-2011-0031796 discloses a kind of etching solution comprising water-soluble cpds, has: A) superoxide (H
2o
2), B) persulphate, C) there is soluble compound and the water of amino and carboxyl.
Korean patent application publication No. 10-2012-0044630 discloses a kind of etching solution of the metal level for comprising copper, comprises: hydrogen peroxide, phosphoric acid, cyclic amine compound, vitriol, fluoroboric acid and water.
Korean patent application publication No. 10-2012-0081764 discloses a kind of etching solution, comprises: A) ammonium hydroxide, B) hydrogen peroxide, C) fluorine cpd, D) polyvalent alcohol and E) water.
But, comprising in the CD loss of metal level of base copper, gradient (tapering), pattern lines degree, metal residue, package stability and pending number of sheets etc., etching solution above-mentioned fully can not meet condition required in association area.
Patent documentation
Patent documentation 1: Korean patent application publication No. 10-2011-0031796
Patent documentation 2: Korean patent application publication No. 10-2012-0044630
Patent documentation 3: Korean patent application publication No. 10-2012-0081764
Summary of the invention
Therefore, the present invention has been designed to solve the problem, and an object of the present invention is to provide: a kind of etchant, and this etchant has the processing power to a large amount of sheet material of excellent job security, excellent etch-rate and excellence; And a kind of method using said composition to manufacture array substrate for liquid crystal display.
In order to achieve the above object, one aspect of the present invention provides a kind of etchant, comprise: the water of metal layer agent, fluorine cpd, sequestrant and surplus, wherein, described sequestrant comprises the compound of chemical formula 1 below, further, based on the described etchant of 1g, the amount of the chemical formula 1 comprised in described inner complex is 0.6mmol to 2mmol.
[chemical formula 1]
Wherein, l, m and n are the integer of 0 to 2 independently of one another,
Wherein, l, m and n are not all 0;
Wherein, X, Y and Z are O, N or S independently of one another;
Wherein, A and B is CH independently of one another
2or C=O.
Manufacture a method for array substrate for liquid crystal display, comprising:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; With
E) step of the pixel electrode be connected with source/drain is formed;
Wherein, described step a), d) or e) comprises formation metal level and etches with the etchant according to any one of the present invention the step that described metal level forms electrode.
According to the present invention, can by containing the various sequestrant process mass substrates except glycol.And the example comprising the etching metal layer fluid composition of base copper of the present invention provides excellent job security by the hydrogen peroxide containing low levels and can dispose the effect of this etching solution economically.
Further, the method using the etchant in the present invention to manufacture array substrate for liquid crystal display can manufacture the array substrate for liquid crystal display with excellent drive characteristic by forming the electrode with superior etch profile on array substrate for liquid crystal display.
Embodiment
Below, detailed description of the present invention will be provided.
The invention relates to a kind of etchant, comprise: the water of metal layer agent, fluorine cpd, sequestrant and surplus,
Wherein, described sequestrant comprises the compound of chemical formula 1 below, and based on the described etchant of 1g, the amount of the chemical formula 1 comprised in described sequestrant is 0.6mmol to 2mmol:
[chemical formula 1]
Wherein, l, m and n are the integer of 0 to 2 independently of one another,
Wherein, l, m and n are not all 0;
Wherein, X, Y and Z are O, N or S independently of one another;
Wherein, A and B is CH independently of one another
2or C=O.
The pending number of sheets for substrate increases according to the chelated metal ions of the such as cupric ion existed in etching etching solution, and this is by the compound comprising chemical formula 1 and controls the sequestrant of the repeating unit of n in chemical formula 1 and obtain.
Therefore, based on the etchant of 1g, the amount of the chemical formula 1 comprised in sequestrant is preferably 0.6mmol to 2mmol, and is more preferably 0.8mmol to 1.5mmol.
If the mmole number of n repeating unit is less than 0.6, then the increase effect of pending number of sheets is insufficient.Further, if it is more than 2, then there is the problem suppressing etch-rate to strengthen because viscosity increases.
Further, the sequestrant comprising the compound of chemical formula 1 can be selected from the group that is made up of chemical formula 2 to chemical formula 7 below one or more:
[chemical formula 2]
[chemical formula 3]
[chemical formula 4]
[chemical formula 5]
[chemical formula 6]
[chemical formula 7]
Wherein,
P is the integer of more than 0;
Q is the integer of 2 to 3;
S is the integer of more than 2; And
R, R
1and R
2be hydrogen or C1-C4 aliphatic hydrocrbon independently of one another.
In the present invention, metal layer agent (A) is the main component for metal oxide layer, have no particular limits, but can be selected from the group of the composition such as hydrogen peroxide, peracetic acid, metal oxide, nitric acid, persulphate, haloid acid, halogen acid salt one or more.
Metal oxide refers to oxidized metal, such as, and such as Fe
3+, Cu
2+deng, and it is included in solution state and is dissociated into Fe
3+, Cu
2+deng compound and analogue.Persulphate comprises ammonium persulphate, persulfuric acid an alkali metal salt, potassium hydrogen persulfate composite salts (oxone) etc., and halogen acid salt comprises oxymuriate, perchlorate, bromate, hyperbromic acid salt and analogue.
This etchant can make containing 1 % by weight to 40 % by weight metal layer agent, 0.1 % by weight to 5 % by weight fluorine cpd, 0.1 % by weight to 10 % by weight comprise the sequestrant of chemical formula 1 and the water of surplus.
The content of metal layer agent suitably can be adjusted according to the type of oxygenant and characteristic, and, when it is comprised in above-mentioned scope, the etch-rate of metal level suitably can be adjusted.
The content comprising the sequestrant of the compound of chemical formula 1 is more preferably 2 % by weight to 5 % by weight.If the content comprising the compound chelating agent of chemical formula 1 is less than 0.1 % by weight, be then difficult to expect the pending number of sheets of increase for substrate.Further, if it is more than 10 % by weight, is then difficult to expection and improves effect, or rather, because the viscosity increase of etching solution causes etch-rate to reduce, so it is not preferred.
The fluorine cpd comprised in etchant of the present invention for removing etch residues, and for etching titanium-based metal layer.
Based on the gross weight of said composition, the content of fluorine cpd can be 0.1 % by weight to 5 % by weight, is preferably 0.1 % by weight to 2 % by weight.
Above-mentioned scope is preferred, because can prevent etch residues and not cause the etching of glass substrate or lower silicon layer.
But if it exceeds above-mentioned scope, then produce stain due to uneven etching characteristic in substrate, excessive etch-rate can damage lower floor, and etch-rate controls to become difficulty during technique.
Preferably, fluorine cpd can be the compounds that can be dissociated into fluorion or polyatom fluorion.
The compound that can be dissociated into fluorion or polyatom fluorion can be selected from by least one in the group of Neutral ammonium fluoride, Sodium Fluoride, Potassium monofluoride, sodium bifluoride and potassium bifluoride or multiple.
Etchant of the present invention is preferred for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or their multilayer.
Copper base metal layer refers to layers of copper or copper alloy layer, and molybdenum base metal layer refers to molybdenum layer or Mo alloy, and titanium-based metal layer refers to titanium layer or titanium alloy layer.
Multilayer comprises such as: the bilayer of molybdenum base metal layer/copper base metal layer, and copper base metal layer is lower floor and molybdenum base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base metal layer, Mo layer is lower floor and copper base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base and titanium base alloy layer; And being greater than the multilayer of three layers, copper base metal layer and molybdenum base metal layer are laminated to each other, such as molybdenum base metal layer/copper base metal layer/molybdenum base metal layer or copper base metal layer/molybdenum base metal layer/copper base metal layer.
In addition, multilayer comprises such as: the bilayer of titanium-based metal layer/copper base metal layer, and copper metal layer is lower floor and titanium-based metal layer is upper strata; The bilayer of copper base metal layer/titanium-based metal layer, titanium coating is lower floor and copper base metal layer is upper strata; And being greater than the multilayer of three layers, copper base metal layer and titanium-based metal layer are laminated to each other, such as titanium-based metal layer/copper base metal layer/titanium-based metal layer or copper base metal layer/titanium-based metal layer/copper base metal layer.
Multiple consideration forms upper strata or the material of lower floor or the binding property etc. with layer, can determine the interlayer unitized construction of multilayer.
Copper, molybdenum or titanium alloy layer refer to and use the alloy of other different metal to carry out the metal level produced for main component according to film character with copper, molybdenum or titanium.Such as, Mo alloy refers to and is main component with molybdenum and carries out the layer produced containing one or more the alloy be selected from titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In).
Etchant of the present invention can further containing be selected from the group that is made up of the acid of the compound of nitrogen atom and sulfur-bearing (S) atom or phosphorus (P) atom one or more.
The compound of the nitrogen atom contained in etchant of the present invention plays the etch-rate strengthening etchant and the effect increasing pending number of sheets.
As the compound of nitrogen atom, the compound of nitrogen atom known in the art can be used ad lib, and the compound in the molecule containing amino and carboxylic acid group can be used typically.
The a-amino acid such as containing a carbon atom between carboxylic acid and amino can be comprised in the molecule containing compound that is amino and carboxylic acid group, and be typically: monovalence amino acid, such as glycine, L-glutamic acid, glutamine, Isoleucine, proline(Pro), tyrosine, arginine etc.; With multivalence amino acid, such as iminodiethanoic acid, nitrilotriacetic acid(NTA), ethylene glycol tetraacetic.
The compound of nitrogen atom can be used alone or combinationally uses with two or more.
Based on the gross weight of said composition, the content of the compound of nitrogen atom is 0.1 % by weight to 10 % by weight, is preferably 1 % by weight to 5 % by weight.
If the compound of nitrogen atom is included in above-mentioned scope, then it can improve the etch-rate of etching solution and pending number of sheets.
Based on the gross weight of said composition, the content of the acid of sulfur-bearing (S) atom or phosphorus (P) atom is 0.01 % by weight to 10 % by weight, is preferably 0.01 % by weight to 1 % by weight.
When the amount of this acid meets above-mentioned scope, the function of expection can be performed, because the risk that the metal level over etching that caused by the acid of sulfur-bearing (S) atom or phosphorus (P) atom and lower floor corrode can be avoided, and its problem that the etch-rate of copper metal layer can not be caused to decline because acid content is too little.
As the acid containing sulphur (S) atom or phosphorus (P) atom, any compositions known in the art such as such as sulfuric acid, sulfonic acid, phosphoric acid, phosphonic acids can be used ad lib, and particularly preferably can use phosphoric acid.Phosphoric acid promotes hydrogen peroxide etch copper by providing hydrogen ion for etching solution.In addition, it forms phosphoric acid salt by combining with the cupric ion of oxidation and increases solubleness in water, thus eliminates the metal level residue after etching.
The water used in the present invention refers to deionized water, uses the water of semiconductor technology, and preferably uses the water being greater than 18M Ω/cm.
Except composition above-mentioned, etchant of the present invention can comprise further be selected from etching control agent, tensio-active agent, metal ion chelation agent, corrosion inhibitor and pH adjusting agent one or more.
As the embodiment of etchant of the present invention, hydrogen peroxide can be used to be used as metal layer agent; Further, outside fluorinated compound, the sequestrant comprising the compound of chemical formula 1 and water, can comprise in the group be made up of the acid of the atom of the compound of nitrogen atom and sulfur-bearing (S) atom or phosphoric acid (P) further one or more.
Particularly, this etchant is preferred for etch copper base metal layer, copper base metal layer/Mo layer or copper base metal layer/titanium-based metal layer.But the application of said composition is not limited to these layers.
Hydrogen peroxide is the main component of cupric oxide, molybdenum and titanium, and based on the gross weight of said composition, its content can be 1 % by weight to 25 % by weight, is preferably 1% % by weight to 10 % by weight, is more preferably 1% % by weight to 5 % by weight.
When the amount of hydrogen peroxide falls in above-mentioned scope, prevent the etch-rate of copper, molybdenum and titanium to be deteriorated, the etching of appropriate amount can be realized, and excellent etching outline can be obtained.
But, if it exceeds above-mentioned scope, then can not there is etching or over etching occurs, and therefore pattern loss and the loss function as metal line may occur.
In addition, for the compound of nitrogen atom and the acid of sulfur-bearing (S) atom or phosphorus (P) atom, can distinguish and preferably use amino acid and phosphoric acid.
The composition forming etchant of the present invention preferably has semiconductor technology purity.
Further, the present invention relates to a kind of method manufacturing array substrate for liquid crystal display, having comprised:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; With
E) step with the pixel electrode be connected that drains is formed;
Wherein, described step a), d) or e) comprises formation metal level and etches with the etchant according to any one of the present invention the step that described metal level forms electrode.
According to the array substrate for liquid crystal display comprising the electrode of etching outline excellence that the present invention is produced by aforesaid method, there is excellent drive characteristic.
Array substrate for liquid crystal display can be thin film transistor (TFT) array substrate.
Below, the present invention will be described in more detail by present embodiment.But the following examples are used for explaining the present invention in detail, and scope of the present invention is not limited to the following examples.Within the scope of the invention, those skilled in the art suitably can revise the following examples.
embodiment 1-9 and comparative example 1-3: the preparation of etchant
Assign to prepare etchant by mixing these one-tenth with regulation content in table 1 below.
Further, based on the gross weight of this compound, the amount of the mmole of the compound of the chemical formula 1 comprised in sequestrant is called as " chelating concentration " (chelatingconcentration).
[table 1]
(unit: % by weight)
experimental example 1: for the evaluation of the etching outline of the etchant of Cu/Mo-Ti bilayer
The etchant of embodiment 1 to 9 and comparative example 1 to 3 is used to carry out etching Cu/Mo-Ti bilayer.When etching, carry out etching 100 seconds with the etchant that temperature is about 30 DEG C.With the naked eye measure EPD (EndPointDetection (end-point detection), metal etch timing) and obtain etch-rate according to the time.Use SEM (Hitachi Ltd, model S4700) to check the section of outline of the Cu/Mo-Ti bilayer of etching, and result is shown in table 2 below.
experimental example 2: the evaluation of pending number of sheets
By using the etchant of embodiment 1 to 9 and comparative example 1 to 3 to carry out reference test (with reference to etching), and the copper powder of 4000ppm added to the etching solution of reference test and make it dissolve completely.After this, reference test is carried out in etching again, and evaluates the suppression ratio of etch-rate.
< judgement criteria >
Zero: excellent (suppression ratio of etch-rate is less than 10%)
△: good (suppression ratio of etch-rate is 10% to 20%)
×: bad (suppression ratio of etch-rate is greater than 20%)
[table 2]
Claims (10)
1. an etchant, comprises: the water of metal layer agent, fluorine cpd, sequestrant and surplus,
Wherein, described sequestrant comprises the compound of chemical formula 1 below, and based on the described etchant of 1g, the amount of the chemical formula 1 comprised in described sequestrant is 0.6mmol to 2mmol:
[chemical formula 1]
Wherein,
L, m and n are the integer of 0 to 2 independently of one another;
L, m and n are not all 0;
X, Y and Z are O, N or S independently of one another; And
A and B is CH independently of one another
2or C=O.
2. etchant according to claim 1, wherein, the sequestrant comprising the compound of chemical formula 1 be selected from the group that is made up of chemical formula 2 to chemical formula 7 below one or more:
[chemical formula 2]
[chemical formula 3]
[chemical formula 4]
[chemical formula 5]
[chemical formula 6]
[chemical formula 7]
Wherein,
P is the integer of more than 0;
Q is the integer of 2 to 3;
S is the integer of more than 2; And
R, R
1and R
2be hydrogen or C1-C4 aliphatic hydrocrbon independently of one another.
3. etchant according to claim 1, wherein, described metal layer agent be selected from the group that is made up of hydrogen peroxide, peracetic acid, metal oxide, nitric acid, persulphate, haloid acid and halogen acid salt one or more.
4. etchant according to claim 1, based on the gross weight of described composition, comprises:
The described metal layer agent of 1 % by weight to 40 % by weight;
The described fluorine cpd of 0.1 % by weight to 5 % by weight;
The sequestrant comprising the compound of chemical formula 1 of 0.1 % by weight to 10 % by weight; With
The water of surplus.
5. etchant according to claim 4, comprise in the group being selected from and being made up of the compound of the nitrogen atom of 0.1 % by weight to 10 % by weight and the sulfur atom-containing of 0.01 % by weight to 10 % by weight or the acid of phosphorus atom further one or more.
6. etchant according to claim 5, wherein, described metal layer agent is hydrogen peroxide.
7. etchant according to claim 6, wherein,
Based on the gross weight of described composition, described metal layer agent is the hydrogen peroxide of 1 % by weight to 25 % by weight;
The compound of described nitrogen atom is amino acid; And
The acid of described sulfur atom-containing or phosphorus atom is phosphoric acid.
8. etchant according to claim 1, wherein, described etchant is used for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or their multilayer.
9. etchant according to claim 8, described multilayer is copper base metal layer/molybdenum base metal layer, copper base metal layer/titanium-based metal layer or copper base metal layer/molybdenum-titanium base alloy layer.
10. manufacture a method for array substrate for liquid crystal display, comprising:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; With
E) step with the pixel electrode be connected that drains is formed;
Wherein, described step a), d) or e) comprises formation metal level and etches with the etchant according to any one of claim 1 to 9 step that described metal level forms electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140079390A KR102218669B1 (en) | 2014-06-27 | 2014-06-27 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
| KR10-2014-0079390 | 2014-06-27 |
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| Publication Number | Publication Date |
|---|---|
| CN105274525A true CN105274525A (en) | 2016-01-27 |
| CN105274525B CN105274525B (en) | 2018-04-10 |
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ID=55144333
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| CN201510342163.2A Active CN105274525B (en) | 2014-06-27 | 2015-06-18 | Etchant and the method using its manufacture array substrate for liquid crystal display |
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| KR (1) | KR102218669B1 (en) |
| CN (1) | CN105274525B (en) |
| TW (1) | TW201600644A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105543846A (en) * | 2016-02-05 | 2016-05-04 | 广东成德电子科技股份有限公司 | Neutral etching agent for printed circuit board and etching method |
| CN111032916A (en) * | 2017-09-12 | 2020-04-17 | 株式会社东芝 | Etching solution for active metal solder and method for manufacturing ceramic circuit board using same |
| CN112415799A (en) * | 2020-11-10 | 2021-02-26 | Tcl华星光电技术有限公司 | Array substrate and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7142461B2 (en) * | 2018-05-14 | 2022-09-27 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM |
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| KR101674680B1 (en) | 2009-09-21 | 2016-11-10 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR20120044630A (en) | 2010-10-28 | 2012-05-08 | 주식회사 동진쎄미켐 | Etchant composition for copper-containing metal film and etching method using the same |
| KR101873583B1 (en) | 2011-01-12 | 2018-07-03 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
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- 2014-06-27 KR KR1020140079390A patent/KR102218669B1/en active IP Right Grant
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- 2015-06-15 TW TW104119232A patent/TW201600644A/en unknown
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| CN111032916A (en) * | 2017-09-12 | 2020-04-17 | 株式会社东芝 | Etching solution for active metal solder and method for manufacturing ceramic circuit board using same |
| CN112415799A (en) * | 2020-11-10 | 2021-02-26 | Tcl华星光电技术有限公司 | Array substrate and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160001240A (en) | 2016-01-06 |
| TW201600644A (en) | 2016-01-01 |
| KR102218669B1 (en) | 2021-02-22 |
| CN105274525B (en) | 2018-04-10 |
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