CN105220148A - Etchant and use it to manufacture the method for array substrate for liquid crystal display - Google Patents
Etchant and use it to manufacture the method for array substrate for liquid crystal display Download PDFInfo
- Publication number
- CN105220148A CN105220148A CN201510342127.6A CN201510342127A CN105220148A CN 105220148 A CN105220148 A CN 105220148A CN 201510342127 A CN201510342127 A CN 201510342127A CN 105220148 A CN105220148 A CN 105220148A
- Authority
- CN
- China
- Prior art keywords
- metal layer
- weight
- etchant
- chemical formula
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Disclosed herein is a kind of etchant, comprises: the compound of metal layer agent, fluorine cpd, nitrogen atom, phosphonic acids, two alcohol and waters; And a kind of method using said composition to manufacture array substrate for liquid crystal display.
Description
Technical field
The present invention relates to metal level etchant and use it to manufacture the method for array substrate for liquid crystal display.
Background technology
Along with the flat-panel monitor of such as LCD, PDP and OLED particularly TFT-LCD becomes large with screen, extensively rethink the individual layer adopting copper or copper alloy composition, or adopt copper or copper alloy/other metal, the alloy of other metal or metal oxide be greater than two-layer multilayer, to reduce routing resistance and to improve the adhesivity with dielectric silicon layer.Such as, copper/molybdenum layer, copper/titanium layer or copper/molybdenum-titanium layer can be formed as the grid line of TFT-LCD and the source/drain line of composition data line, and may contribute to expanding indicating meter screen.Therefore, exploitation is needed to have the composition of superior etch characteristic for etching these metal levels comprising base copper.
As etch combination above-mentioned, usually use hydrogen peroxide and amino acids etching solution, hydrogen peroxide and phosphoric acid class etching solution, hydrogen peroxide and polyethylene glycols etching solution etc.
As an example, Korean patent application publication No. 10-2011-0031796 discloses a kind of etching solution comprising water-soluble cpds, has: A) superoxide (H
2o
2), B) persulphate, C) there is soluble compound and the water of amino and carboxyl.
Korean patent application publication No. 10-2012-0044630 discloses a kind of etching solution of the metal level for comprising copper, comprises: hydrogen peroxide, phosphoric acid, cyclic amine compound, vitriol, fluoroboric acid and water.
Korean patent application publication No. 10-2012-0081764 discloses a kind of etching solution, comprises: A) ammonium hydroxide, B) hydrogen peroxide, C) fluorine cpd, D) polyvalent alcohol and E) water.
But, comprising in the CD loss of metal level of base copper, gradient (tapering), pattern lines degree, metal residue, package stability and pending number of sheets etc., etching solution above-mentioned fully can not meet condition required in association area.
Patent documentation
Patent documentation 1: Korean patent application publication No. 10-2011-0031796
Patent documentation 2: Korean patent application publication No. 10-2012-0044630
Patent documentation 3: Korean patent application publication No. 10-2012-0081764
Summary of the invention
Therefore, the present invention has been designed to solve the problem, and an object of the present invention is to provide a kind of etchant, this etchant has excellent job security, package stability, particularly excellent etch-rate and the excellent processing power to a large amount of sheet material; And a kind of method using said composition to manufacture array substrate for liquid crystal display.
In order to achieve the above object, one aspect of the present invention provides a kind of etchant, comprises: the agent of (A) metal layer; (B) fluorine cpd; (C) compound of nitrogen atom; (D) phosphonic acids; (E) glycol; (F) water.
Another aspect of the present invention provides a kind of method manufacturing array substrate for liquid crystal display, comprising:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; With
E) step of the pixel electrode be connected with source/drain is formed;
Wherein, step a), d) or e) comprises and forms metal level and by the step forming electrode according to etchant etch metal layers of the present invention.
Metal level etchant of the present invention contains the hydrogen peroxide of low levels, and therefore it has excellent job security, price competitiveness and can dispose the effect of this etching solution economically.
Metal level etchant of the present invention provides the ability of process mass substrate and package stability excellent especially.
Further, the method using the etchant in the present invention to manufacture array substrate for liquid crystal display can manufacture the array substrate for liquid crystal display with excellent drive characteristic by forming the electrode with superior etch profile on array substrate for liquid crystal display.
Embodiment
Below, detailed description of the present invention will be provided.
The present invention relates to a kind of etchant, it is characterized in that, comprise: the agent of (A) metal layer; (B) fluorine cpd; (C) compound of nitrogen atom; (D) phosphonic acids; (E) glycol; (F) water.
Metal layer agent has no particular limits, typically for being selected from least one composition in the group that is made up of hydrogen peroxide, peracetic acid, metal oxide, nitric acid, persulphate, haloid acid, halogen acid salt etc.
Below, be described to each composition formed in etchant of the present invention, but the present invention is not limited to these compositions.
(A) metal layer agent
In the present invention, metal layer agent (A) is the main component for metal oxide layer, have no particular limits, but can be selected from the group of the composition such as hydrogen peroxide, peracetic acid, metal oxide, nitric acid, persulphate, haloid acid, halogen acid salt one or more, more preferably can be hydrogen peroxide.
Metal oxide refers to oxidized metal, such as, and such as Fe
3+, Cu
2+deng, and it is included in solution state and is dissociated into Fe
3+, Cu
2+deng compound and analogue.Persulphate comprises ammonium persulphate, persulfuric acid an alkali metal salt, potassium hydrogen persulfate composite salts (oxone) etc., and halogen acid salt comprises oxymuriate, perchlorate, bromate, hyperbromic acid salt etc.
In the present invention, metal layer agent is the main component of cupric oxide, molybdenum or titanium.Based on the gross weight of said composition, the content of metal layer agent is 1 % by weight to 25 % by weight, is preferably 1 % by weight to 10 % by weight, is more preferably 1 % by weight to 5 % by weight.
When the amount of metal layer agent falls in above-mentioned scope, prevent the etch-rate of copper, molybdenum and titanium to be deteriorated, the etching of appropriate amount can be realized, and excellent etching outline can be obtained.But if it exceeds above-mentioned scope, then can not there is etching or over etching occurs in treated layer, and therefore pattern loss and the loss function as metal line may occur.
The content of metal layer agent suitably can control according to the type of oxygenant and characteristic.
(B) fluorine cpd
The fluorine cpd comprised in etchant of the present invention for removing etch residues, and for etching titanium-based metal layer.
Based on the gross weight of said composition, the content of fluorine cpd can be 0.1 % by weight to 5 % by weight, is preferably 0.1 % by weight to 2 % by weight.
Above-mentioned scope is preferred, because can prevent etch residues and not cause the etching of glass substrate or lower silicon layer.
But if it exceeds above-mentioned scope, then produce stain due to uneven etching characteristic in substrate, excessive etch-rate can damage lower floor, and etch-rate controls to become difficulty during technique.
Preferably, fluorine cpd can be the compounds that can be dissociated into fluorion or polyatom fluorion.
The compound that can be dissociated into fluorion or polyatom fluorion can be selected from by one or more in the group of hydrofluoric acid, Neutral ammonium fluoride, Sodium Fluoride, Potassium monofluoride, sodium bifluoride and potassium bifluoride, and is more preferably Neutral ammonium fluoride and/or hydrofluoric acid.
(C) compound of nitrogen atom
The compound of the nitrogen atom contained in etchant of the present invention suppresses the decomposition reaction of metal layer agent especially hydrogen peroxide usually, and plays the etch-rate strengthening etching solution and the effect increasing pending number of sheets.
Based on the gross weight of said composition, the content of the compound of nitrogen atom is 1 % by weight to 10 % by weight, is more preferably 1 % by weight to 5 % by weight.Above-mentioned scope is preferred, because it can improve the etch-rate of this etchant and pending number of sheets.
The compound of nitrogen atom known in the art can be used ad lib, and the compound in the molecule containing amino and carboxylic acid group can be used typically.
The a-amino acid such as containing a carbon atom between carboxylic acid and amino can be comprised in the molecule containing compound that is amino and carboxylic acid group, and be typically: monovalence amino acid, such as glycine, L-glutamic acid, glutamine, Isoleucine, proline(Pro), tyrosine, arginine etc.; With multivalence amino acid, such as iminodiethanoic acid, nitrilotriacetic acid(NTA), ethylene glycol tetraacetic.
The compound of nitrogen atom can be used alone or combinationally uses with two or more.
(D) phosphonic acids
The phosphonic acids comprised in etchant of the present invention provides has hydrionic etching solution, and can promote metal layer agent etching metal, such as copper.Further, it to combine formation phosphonic acids with the metal ion of oxidation, improves the solubleness in water, and thus eliminates the metal level residue after etching.
Based on the gross weight of said composition, the content of phosphonic acids is 0.01 % by weight to 10 % by weight, is preferably 0.01 % by weight to 1 % by weight.When the amount of phosphonic acids meets above-mentioned scope, the function of expection can be performed, because the risk of the metal level over etching that caused by phosphonic acids and lower floor's corrosion can be avoided, and its problem that the etch-rate of copper metal layer can not be caused to decline because phosphonic acids content is too little.
In the present invention, phosphonic acids (D) can be selected from the group that is made up of chemical formula 1 below and chemical formula 2 one or more:
[chemical formula 1]
[chemical formula 2]
In superincumbent chemical formula 1 to chemical formula 2, n is the integer of 1 to 4, and
R is organic group, can be identical or different from each other, and is alkyl, thiazolinyl, alkynyl, the aryl or aralkyl of C1 ~ C20 straight or branched; And
Described alkyl, thiazolinyl, alkynyl, aryl or aralkyl can comprise select free hydroxyl, carbonyl, carboxyl, epoxy group(ing), ether, amino, nitro, cyano group, thio group, silyl, sulfo group, phosphate radical, halogenation base ,-O-and-N-composition group in one or more, and one or more functional groups can be comprised, but it can be not limited thereto.
In chemical formula 1 above, n is the compound that the example of the compound of 1 can be preferably chemical formula 3 to chemical formula 10 below.
[chemical formula 3]
[chemical formula 4]
[chemical formula 5]
[chemical formula 6]
[chemical formula 7]
[chemical formula 8]
[chemical formula 9]
[chemical formula 10]
In chemical formula 1 above, n is the compound that the example of the compound of 2 can be preferably chemical formula 11 to chemical formula 13 below.
[chemical formula 11]
[chemical formula 12]
[chemical formula 13]
In chemical formula 1 above, n is the compound that the example of the compound of 3 can be preferably chemical formula 14 below.
[chemical formula 14]
In chemical formula 1 above, n is the compound that the example of the compound of 4 can be preferably chemical formula 15 below.
[chemical formula 15]
In chemical formula 2 above, the example of compound can be preferably the compound of chemical formula 16 to chemical formula 17 below.
[chemical formula 16]
[chemical formula 17]
(E) glycol
The glycol comprised in etchant of the present invention is for by surrounding the metal ion that melts out etching solution and decomposition reaction by suppressing the activity of metal ion to suppress metal layer agent.If reduce the activity of metal ion like this, while use etching solution, reliably can perform process, and also improve the pending number of sheets for substrate.
Based on the gross weight of said composition, the content of glycol is 0.1 % by weight to 10 % by weight, is preferably 1 % by weight to 5 % by weight.
If the content of glycol is less than 0.1 % by weight, then it may have the problem that etch uniformity reduces.Further, when it is more than 10 % by weight, the shortcoming generating a large amount of foam may be caused.
As glycol, composition known in the art can be used without any restriction, particularly preferably use polyoxyethylene glycol.
As polyoxyethylene glycol, use end to have the addition polymer of the oxyethane of hydroxyl or ether, but it preferably have at least one hydroxyl.Further, molecular weight is more preferably less than 1000, to suppress soltion viscosity excessively to rise.
(F) water
There is no particular limitation for the water comprised in etchant of the present invention, but preferably refer to deionized water, and more preferably use resistivity value to be greater than the semiconductor technology deionized water of 18M Ω/cm.
The water-content of surplus can be contained, make said composition add up to 100 % by weight.
Except mentioned composition, etchant of the present invention can further containing the more than one in etching conditioning agent, tensio-active agent, sequestrant, corrosion inhibitor and pH adjusting agent.
The composition forming etchant of the present invention preferably needs to have semiconductor technology purity.
The multilayer that etchant of the present invention can be preferred for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or be made up of them.
Copper base metal layer refers to layers of copper or copper alloy layer, and molybdenum base metal layer refers to molybdenum layer or Mo alloy, and titanium-based metal layer refers to titanium layer or titanium alloy layer.
Multilayer comprises such as: the bilayer of molybdenum base metal layer/copper base metal layer, and copper base metal layer is lower floor and molybdenum base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base metal layer, Mo layer is lower floor and copper base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base and titanium-based metal layer; And being greater than the multilayer of three layers, copper base metal layer and molybdenum base metal layer are laminated to each other, such as molybdenum base metal layer/copper base metal layer/molybdenum base metal layer or copper base metal layer/molybdenum base metal layer/copper base metal layer.
In addition, multilayer comprises such as: the bilayer of titanium-based metal layer/copper base metal layer, and copper metal layer is lower floor and titanium-based metal layer is upper strata; The bilayer of copper base metal layer/titanium-based metal layer, titanium coating is lower floor and copper base metal layer is upper strata; And being greater than the multilayer of three layers, copper base metal layer and titanium-based metal layer are laminated to each other, such as titanium-based metal layer/copper base metal layer/titanium-based metal layer or copper base metal layer/titanium-based metal layer/copper base metal layer.
Multiple consideration forms upper strata or the material of lower floor or the binding property etc. with layer, can determine the interlayer unitized construction of multilayer.
Copper, molybdenum or titanium alloy layer refer to and use the alloy of other different metal to carry out the metal level produced for main component according to film character with copper, molybdenum or titanium.Such as, Mo alloy refers to and is main component with molybdenum and carries out the layer produced containing one or more the alloy be selected from titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In).
Particularly, etchant of the present invention is preferred for etch copper base metal layer, copper base metal layer/Mo layer or copper base metal layer/titanium-based metal layer.But the application of said composition is not limited to bilayer.
Further, the present invention relates to a kind of method manufacturing array substrate for liquid crystal display, having comprised:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; With
E) step of the pixel electrode be connected with source/drain is formed;
Wherein, step a), d) or e) comprises and forms metal level and by the step forming electrode according to etchant etch metal layers of the present invention.
Have superior etch profile electrode according to comprising, the array substrate for liquid crystal display produced by aforesaid method has excellent drive characteristic.
Array substrate for liquid crystal display can be thin film transistor (TFT) array substrate.
Below, the present invention will be described in more detail by present embodiment.But the following examples are used for explaining the present invention in detail, and scope of the present invention is not limited to the following examples.Within the scope of the invention, those skilled in the art suitably can revise the following examples.
Embodiment 1-8 and comparative example 1-3: the preparation of etchant
Assign to prepare etchant by mixing these one-tenth with the regulation content described in table 1 below.
[table 1]
(unit: % by weight)
Experimental example 1: the evaluation of etchant
(1) etching of Cu/Mo-Ti bilayer
The etchant of embodiment 1 to 8 and comparative example 1 to 3 is used to carry out etching Cu/Mo-Ti bilayer.When etching, etch 100 seconds with the etchant that temperature is about 30 DEG C.With the naked eye measure EPD (EndPointDetection (end-point detection), metal etch timing) and obtain etch-rate according to the time.Result is shown in table 2 below.
Experimental example 2: the evaluation of pending number of sheets
By using the etchant of embodiment 1 to 8 and comparative example 1 to 3 to carry out reference test (with reference to etching), and the copper powder of 4000ppm added to the etching solution of reference test and make it dissolve completely.After this, reference test is carried out in etching again, and evaluates the suppression ratio of etch-rate, and result is shown in table 2 below.
< judgement criteria >
Zero: excellent (suppression ratio of etch-rate is less than 10%)
△: good (suppression ratio of etch-rate is 10% to 20%)
×: bad (suppression ratio of etch-rate is greater than 20%)
[table 2]
Claims (8)
1. an etchant, comprises: the compound of metal layer agent, fluorine cpd, nitrogen atom, phosphonic acids, two alcohol and waters.
2. etchant according to claim 1, wherein, phosphonic acids be selected from the group that is made up of chemical formula 1 below and chemical formula 2 one or more:
Wherein, in described chemical formula 1 and described chemical formula 2,
N is the integer of 1 to 4; And
R is organic group, can be identical or different from each other, and is alkyl, thiazolinyl, alkynyl, the aryl or aralkyl of C1 ~ C20 straight or branched;
Wherein, described alkyl, thiazolinyl, alkynyl, aryl or aralkyl can comprise select free hydroxyl, carbonyl, carboxyl, epoxy group(ing), ether, amino, nitro, cyano group, thio group, silyl, sulfo group, phosphate radical, halogenation base ,-O-and-N-composition group in one or more.
3. etchant according to claim 1, wherein, described metal layer agent be selected from the group that is made up of hydrogen peroxide, peracetic acid, metal oxide, nitric acid, persulphate, haloid acid and hydrohalogen one or more.
4. etchant according to claim 1, based on the gross weight of described composition, comprises:
The described metal layer agent of 1 % by weight to 25 % by weight;
The described fluorine cpd of 0.1 % by weight to 5 % by weight;
The compound of the described nitrogen atom of 1 % by weight to 10 % by weight;
The described phosphonic acids of 0.01 % by weight to 10 % by weight;
The described glycol of 0.1 % by weight to 10 % by weight; With
The water of surplus.
5. etchant according to claim 1, wherein, described metal layer agent is hydrogen peroxide, and the compound of described nitrogen atom is amino acid, and described glycol is polyoxyethylene glycol.
6. etchant according to claim 1, wherein, the multilayer that described etchant is used for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or is made up of them.
7. etchant according to claim 6, wherein, described multilayer is copper base metal layer/molybdenum base metal layer, copper base metal layer/titanium-based metal layer or copper base metal layer/molybdenum-titanium-based metal layer.
8. manufacture a method for array substrate for liquid crystal display, comprising:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; With
E) step of the pixel electrode be connected with source/drain is formed;
Wherein, described step a), d) or e) comprises formation metal level and etches with etchant according to any one of claim 1 to 7 the step that described metal level forms electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0079816 | 2014-06-27 | ||
| KR1020140079816A KR102209423B1 (en) | 2014-06-27 | 2014-06-27 | Etching solution composition for metal layer and manufacturing method of an array substrate for liquid crystal display using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105220148A true CN105220148A (en) | 2016-01-06 |
| CN105220148B CN105220148B (en) | 2018-08-28 |
Family
ID=54989406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510342127.6A Active CN105220148B (en) | 2014-06-27 | 2015-06-18 | Etchant and the method for manufacturing array substrate for liquid crystal display using it |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102209423B1 (en) |
| CN (1) | CN105220148B (en) |
| TW (1) | TW201600645A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637209A (en) * | 2016-12-29 | 2017-05-10 | 深圳市华星光电技术有限公司 | Etching solution composition and metal film etching method using same |
| CN109385634A (en) * | 2017-08-11 | 2019-02-26 | 东友精细化工有限公司 | Metal film etchant and the conductive pattern forming method for utilizing it |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102415960B1 (en) * | 2016-02-05 | 2022-07-01 | 동우 화인켐 주식회사 | Etching solution composition for a silicon nitride layer and method for manufacturing a semiconductor device and a TFT array substrate using the same |
| KR101972207B1 (en) * | 2016-12-09 | 2019-04-26 | 경북대학교 산학협력단 | Smart screw |
| KR102379072B1 (en) * | 2017-03-28 | 2022-03-28 | 동우 화인켐 주식회사 | Etchant composition |
| KR102379074B1 (en) * | 2017-03-28 | 2022-03-25 | 동우 화인켐 주식회사 | Etchant composition |
| US11629315B2 (en) | 2018-04-27 | 2023-04-18 | Mitsubishi Gas Chemical Company, Inc. | Aqueous composition and cleaning method using same |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1187689A (en) * | 1996-10-11 | 1998-07-15 | 马林克罗特贝克公司 | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| CN101139712A (en) * | 2006-08-29 | 2008-03-12 | 罗门哈斯电子材料有限公司 | Stripping method |
| CN102102206A (en) * | 2009-12-18 | 2011-06-22 | 鑫林科技股份有限公司 | Metal etching liquid composition and etching method |
| CN102471897A (en) * | 2009-07-09 | 2012-05-23 | 株式会社Adeka | Wet etching system for copper-containing material, and patterning method |
| CN102939396A (en) * | 2010-04-15 | 2013-02-20 | 高级技术材料公司 | Method for recycling of obsolete printed circuit boards |
| CN103080382A (en) * | 2010-08-16 | 2013-05-01 | 高级技术材料公司 | Etching solution for copper or copper alloy |
| CN103627400A (en) * | 2012-08-22 | 2014-03-12 | 易安爱富科技有限公司 | Etchant composition for molybdenum alloy film and indium oxide film |
| CN103668208A (en) * | 2012-09-04 | 2014-03-26 | 易安爱富科技有限公司 | Etchant composition of copper-molybdenum alloy film |
| CN103890234A (en) * | 2011-11-17 | 2014-06-25 | 易安爱富科技有限公司 | Molybdenum-alloy-film and indium-oxide-film etching-solution composition |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1866957A1 (en) * | 2005-04-08 | 2007-12-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| KR101529733B1 (en) * | 2009-02-06 | 2015-06-19 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR101674680B1 (en) | 2009-09-21 | 2016-11-10 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR20120044630A (en) | 2010-10-28 | 2012-05-08 | 주식회사 동진쎄미켐 | Etchant composition for copper-containing metal film and etching method using the same |
| KR101873583B1 (en) | 2011-01-12 | 2018-07-03 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
-
2014
- 2014-06-27 KR KR1020140079816A patent/KR102209423B1/en active IP Right Grant
-
2015
- 2015-06-15 TW TW104119234A patent/TW201600645A/en unknown
- 2015-06-18 CN CN201510342127.6A patent/CN105220148B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1187689A (en) * | 1996-10-11 | 1998-07-15 | 马林克罗特贝克公司 | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| CN101139712A (en) * | 2006-08-29 | 2008-03-12 | 罗门哈斯电子材料有限公司 | Stripping method |
| CN102471897A (en) * | 2009-07-09 | 2012-05-23 | 株式会社Adeka | Wet etching system for copper-containing material, and patterning method |
| CN102102206A (en) * | 2009-12-18 | 2011-06-22 | 鑫林科技股份有限公司 | Metal etching liquid composition and etching method |
| CN102939396A (en) * | 2010-04-15 | 2013-02-20 | 高级技术材料公司 | Method for recycling of obsolete printed circuit boards |
| CN103080382A (en) * | 2010-08-16 | 2013-05-01 | 高级技术材料公司 | Etching solution for copper or copper alloy |
| CN103890234A (en) * | 2011-11-17 | 2014-06-25 | 易安爱富科技有限公司 | Molybdenum-alloy-film and indium-oxide-film etching-solution composition |
| CN103627400A (en) * | 2012-08-22 | 2014-03-12 | 易安爱富科技有限公司 | Etchant composition for molybdenum alloy film and indium oxide film |
| CN103668208A (en) * | 2012-09-04 | 2014-03-26 | 易安爱富科技有限公司 | Etchant composition of copper-molybdenum alloy film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637209A (en) * | 2016-12-29 | 2017-05-10 | 深圳市华星光电技术有限公司 | Etching solution composition and metal film etching method using same |
| CN109385634A (en) * | 2017-08-11 | 2019-02-26 | 东友精细化工有限公司 | Metal film etchant and the conductive pattern forming method for utilizing it |
| CN109385634B (en) * | 2017-08-11 | 2021-09-07 | 东友精细化工有限公司 | Metal film etching liquid composition and conductive pattern forming method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105220148B (en) | 2018-08-28 |
| TW201600645A (en) | 2016-01-01 |
| KR20160001384A (en) | 2016-01-06 |
| KR102209423B1 (en) | 2021-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105220148A (en) | Etchant and use it to manufacture the method for array substrate for liquid crystal display | |
| CN105274525A (en) | Etching solution composition and manufacturing method of array substrate for liquid crystal display using the same | |
| CN105316678A (en) | Etching solution composition and method of preparing array substrate for liquid crystal display using same | |
| CN105316677B (en) | Etchant and the method using its manufacture array substrate for liquid crystal display | |
| CN105274526A (en) | Etching solution composition and manufacturing method of array substrate for liquid crystal display using the same | |
| KR102218353B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR102204219B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| CN105274527B (en) | Etchant and the method for manufacturing array substrate for liquid crystal display using it | |
| CN105297015A (en) | Etching liquid composition and method for using the same to manufacture array substrate for liquid crystal display | |
| KR102218556B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR102218565B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR102204205B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR102209687B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for liquid crystal display using the same | |
| KR102204209B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR102204042B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR102204224B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for liquid crystal display using the same | |
| KR102204361B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR102209686B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for liquid crystal display using the same | |
| KR102209788B1 (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same | |
| KR20160001296A (en) | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |