CN105316678A - Etching solution composition and method of preparing array substrate for liquid crystal display using same - Google Patents
Etching solution composition and method of preparing array substrate for liquid crystal display using same Download PDFInfo
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- CN105316678A CN105316678A CN201510317457.XA CN201510317457A CN105316678A CN 105316678 A CN105316678 A CN 105316678A CN 201510317457 A CN201510317457 A CN 201510317457A CN 105316678 A CN105316678 A CN 105316678A
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- metal layer
- weight
- etchant
- etch
- base metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Abstract
The invention provides an etching solution composition including a metal layer oxidizing agent, fluorine compounds, phosphoric acid, glycols and residual water, wherein the etching solution composition is characterized in that when the number of sheets to be processed is 5000, the ratio of the etching speed to the etching speed when the number of sheets to be processed is 100 is 0.9-1. The invention also provides a method for preparing an array substrate for a liquid crystal display using the same.
Description
Technical field
The present invention relates to metal level etchant and use it to manufacture the method for array substrate for liquid crystal display.
Background technology
Along with the flat-panel monitor of such as LCD, PDP and OLED particularly TFT-LCD becomes large with screen, extensively rethink the individual layer adopting copper or copper alloy composition, or adopt copper or copper alloy/other metal, the alloy of other metal or metal oxide be greater than two-layer multilayer, to reduce routing resistance and to improve the adhesivity with dielectric silicon layer.Such as, copper/molybdenum layer, copper/titanium layer or copper/molybdenum-titanium layer can be formed as the grid line of TFT-LCD and the source/drain line of composition data line, and may contribute to expanding indicating meter screen.Therefore, exploitation is needed to have the composition of superior etch characteristic for etching these metal levels comprising base copper.
As etch combination above-mentioned, usually use hydrogen peroxide and amino acids etching solution, hydrogen peroxide and phosphoric acid class etching solution, hydrogen peroxide and polyethylene glycols etching solution etc.
As an example, Korean patent application publication No. 10-2011-0031796 discloses a kind of etching solution comprising water-soluble cpds, has: A) superoxide (H
2o
2), B) persulphate, C) there is soluble compound and the water of amino and carboxyl.
Korean patent application publication No. 10-2012-0044630 discloses a kind of etching solution of the metal level for comprising copper, comprises: hydrogen peroxide, phosphoric acid, cyclic amine compound, vitriol, fluoroboric acid and water.
Korean patent application publication No. 10-2012-0081764 discloses a kind of etching solution, comprises: A) ammonium hydroxide, B) hydrogen peroxide, C) fluorine cpd, D) polyvalent alcohol and E) water.
But, comprising in the CD loss of metal level of base copper, gradient (tapering), pattern lines degree, metal residue, package stability and pending number of sheets etc., etching solution above-mentioned fully can not meet condition required in association area.
Patent documentation
Patent documentation 1: Korean patent application publication No. 10-2011-0031796
Patent documentation 2: Korean patent application publication No. 10-2012-0044630
Patent documentation 3: Korean patent application publication No. 10-2012-0081764
Summary of the invention
Therefore, the present invention has been designed to solve the problem, and the object of the invention is: the metal level etchant with excellent job security, superior etch speed and process mass substrate ability is provided, and be specially and there is optimal etch characteristic and do not occur because treating number rises the etchant that etch-rate declines; And use said composition to manufacture the method for array substrate for liquid crystal display.
In order to achieve the above object, one aspect of the present invention provides a kind of etchant, comprise: the water of metal layer agent, fluorine cpd, phosphoric acid, glycol and surplus, it is characterized in that, the ratio of the etch-rate when etch-rate when pending number of sheets is 5000 is 100 with pending number of sheets is 0.9 to 1.
Another aspect of the present invention provides a kind of method manufacturing array substrate for liquid crystal display, comprising:
A) on substrate, form the step of grid;
B) on the substrate comprising described grid, form the step of gate insulator;
C) on described gate insulator, form the step of semiconductor layer;
D) on described semiconductor layer, form the step of source/drain; With
E) step of the pixel electrode be connected with described source/drain is formed;
Wherein, described step a), d) or e) comprises formation metal level and etches with etchant according to the present invention the step that described metal level forms electrode.
Owing to rising along with pending number of sheets, etch-rate does not almost decline, and metal level etchant of the present invention can provide excellent pending number of sheets.
Further, as embodiments of the present invention, the metal level etchant such as comprising base copper contains the hydrogen peroxide of low levels, and therefore it has excellent job security, price competitiveness and can dispose the effect of this etching solution economically.
Further, the method using the etchant in the present invention to manufacture array substrate for liquid crystal display can manufacture the array substrate for liquid crystal display with excellent drive characteristic by forming the electrode with superior etch profile on array substrate for liquid crystal display.
Embodiment
Below, detailed description of the present invention will be provided.
The present invention relates to a kind of etchant, comprise: the water of metal layer agent, fluorine cpd, phosphoric acid, glycol and surplus, it is characterized in that, the ratio of the etch-rate when etch-rate of this etchant when pending number of sheets is 5000 is 100 with pending number of sheets is 0.9 to 1.
In the present invention, the ratio of the etch-rate when etch-rate of this etchant when pending number of sheets is 5000 is 100 with pending number of sheets is defined as etching weather resistance.
When by this etchant etch metal layers, the typical problem of existence is: etch-rate rises along with pending number of sheets and declines, and thus can not etch a large amount of metal level.
But etchant of the present invention has the following advantages: because etch-rate declines because superior etch weather resistance rises with pending number of sheets hardly, it can etch more metal levels.
Etch-rate above refer to by the thickness of metal divided by time gained value (thickness of metal/hour, μm/s), wherein, this time has the time measured by the metal level of pre-determined thickness to etching completely.
The etching weather resistance of etchant of the present invention can not be greater than 1 and be in and is less than in the scope of 0.9, because the problem that such as etch residues and tapering change may appear in the difference of etch-rate under identical processing condition.
Metal layer agent, for the main component of metal oxide layer, has no particular limits, but can typically comprise at least one in the group being selected from and being made up of hydrogen peroxide, peracetic acid, metal oxide, nitric acid, persulphate, haloid acid and halogen acid salt etc.
Metal oxide refers to oxidized metal, such as, and such as Fe
3+, Cu
2+deng, and it is included in solution state and is dissociated into Fe
3+, Cu
2+deng compound.
Persulphate comprises ammonium persulphate, persulfuric acid an alkali metal salt, potassium hydrogen persulfate composite salts (oxone) etc., and halogen acid salt comprises oxymuriate, perchlorate, bromate, hyperbromic acid salt etc.
Based on the gross weight of composition, can prepare this etchant with containing 1 % by weight to 40 % by weight metal layer agent, 0.1 % by weight to 5 % by weight fluorine cpd, 0.01 % by weight to 10 % by weight phosphoric acid, the glycol of 0.1 % by weight to 10 % by weight and the water of surplus.
Suitably can adjust the content of metal layer agent according to the type of oxygenant and characteristic, and if it is comprised in above-mentioned scope, then suitably can adjust the etch-rate of metal level.
Based on the gross weight of said composition, the content of fluorine cpd can be 0.1 % by weight to 5 % by weight, is more preferably 0.1 % by weight to 2 % by weight.
Above-mentioned scope is preferred, because prevent etch residues and do not cause the etching of glass substrate or lower silicon layer.
But if it exceeds above-mentioned scope, then produce stain due to uneven etching characteristic in substrate, excessive etch-rate can damage lower floor, and etch-rate controls to become difficulty during technique.
Preferably, fluorine cpd can be the compounds that can be dissociated into fluoride ion or polyatom fluorion.
The compound that can be dissociated into fluoride ion or polyatom fluorion can be selected from by least one in the group of Neutral ammonium fluoride, Sodium Fluoride, Potassium monofluoride, sodium bifluoride and potassium bifluoride or multiple.
Based on the gross weight of said composition, the content of phosphoric acid is 0.01 % by weight to 10 % by weight, and is more preferably 0.01 % by weight to 1 % by weight.When the amount of phosphoric acid meets above-mentioned scope, the function of expection can be performed, because the risk of the metal level over etching that caused by phosphoric acid and lower floor's corrosion can be avoided, and its problem that the etch-rate of copper metal layer can not be caused to decline because phosphorus acid content is too little.
As glycol, composition known in the art can be used without any restriction, particularly preferably use polyoxyethylene glycol.
As polyoxyethylene glycol, end can be used to have the addition polymer of the oxyethane of hydroxyl or ether, and it preferably has at least one hydroxyl, and molecular weight is more preferably less than 1000, to suppress soltion viscosity excessively to rise.
Based on the gross weight of said composition, the content of glycol is 0.1 % by weight to 10 % by weight, is preferably 1 % by weight to 5 % by weight.
If the content of glycol is less than 0.1 % by weight, is difficult to expect the pending number of sheets of raising for substrate, and the problem of etch uniformity decline may be had.Further, when it is more than 10 % by weight, the shortcoming generating a large amount of foam may be caused.
The multilayer that etchant of the present invention can be preferred for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or be made up of them.
Copper base metal layer refers to layers of copper or copper alloy layer, and molybdenum base metal layer refers to molybdenum layer or Mo alloy, and titanium-based metal layer refers to titanium layer or titanium alloy layer.
Multilayer comprises such as: the bilayer of molybdenum base metal layer/copper base metal layer, and copper base metal layer is lower floor and molybdenum base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base metal layer, Mo layer is lower floor and copper base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base and titanium base alloy layer; And being greater than the multilayer of three layers, copper base metal layer and molybdenum base metal layer are laminated to each other, such as molybdenum base metal layer/copper base metal layer/molybdenum base metal layer or copper base metal layer/molybdenum base metal layer/copper base metal layer.
In addition, multilayer comprises such as: the bilayer of titanium-based metal layer/copper base metal layer, and copper metal layer is lower floor and titanium-based metal layer is upper strata; The bilayer of copper base metal layer/titanium-based metal layer, titanium coating is lower floor and copper base metal layer is upper strata; The bilayer of copper base metal layer/titanium-based metal layer and molybdenum base alloy layer; And being greater than the multilayer of three layers, copper base metal layer and titanium-based metal layer are laminated to each other, such as titanium-based metal layer/copper base metal layer/titanium-based metal layer or copper base metal layer/titanium-based metal layer/copper base metal layer.
Multiple consideration forms upper strata or the material of lower floor or the binding property etc. with layer, can determine the interlayer unitized construction of multilayer.
Copper, molybdenum or titanium alloy layer refer to and use the alloy of other different metal to carry out the metal level produced for main component according to film character with copper, molybdenum or titanium.Such as, Mo alloy refers to and is main component with molybdenum and carries out the layer produced containing one or more the alloy be selected from titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In).
Etchant of the present invention additionally can comprise the compound of nitrogen atom.
The compound of the nitrogen atom contained in etchant of the present invention plays and strengthens the etch-rate of etchant and the effect of pending number of sheets.
As the compound of nitrogen atom, the compound of nitrogen atom known in the art can be used ad lib, and the compound in the molecule containing amino and carboxylic acid group can be used typically.
The a-amino acid such as containing a carbon atom between carboxylic acid and amino can be comprised in the molecule containing compound that is amino and carboxylic acid group, and be typically: monovalence amino acid, such as glycine, L-glutamic acid, glutamine, Isoleucine, proline(Pro), tyrosine, arginine etc.; With multivalence amino acid, such as iminodiethanoic acid, nitrilotriacetic acid(NTA), ethylene glycol tetraacetic.
The compound of nitrogen atom can be used alone or combinationally uses with two or more.
Based on the gross weight of said composition, the content of the compound of nitrogen atom is 0.1 % by weight to 10 % by weight, and is more preferably 1 % by weight to 5 % by weight.
If the compound of nitrogen atom is comprised in above-mentioned scope, then it can improve the etch-rate of etching solution and pending number of sheets.
The water used in the present invention refers to deionized water, uses the water of semiconductor technology, and preferably uses the water being greater than 18M Ω/cm.
Except composition above-mentioned, etchant of the present invention can comprise further be selected from etching control agent, tensio-active agent, metal ion chelation agent, corrosion inhibitor and pH adjusting agent one or more.
As embodiments of the present invention, hydrogen peroxide can be used as metal layer agent, and except the water of fluorine cpd, phosphoric acid, glycol and surplus, additionally can comprise the compound of nitrogen atom.
Particularly, etchant is preferred for etch copper base metal layer/Mo layer or copper base metal layer/titanium-based metal layer.But the application of said composition is not limited to bilayer.
Hydrogen peroxide is the main component of cupric oxide, molybdenum and titanium, and based on the gross weight of said composition, its content can be 1 % by weight to 25 % by weight, is preferably 1% % by weight to 10 % by weight, is more preferably 1% % by weight to 5 % by weight.
When the amount of hydrogen peroxide falls in above-mentioned scope, prevent the etch-rate of copper, molybdenum and titanium to be deteriorated, the etching of appropriate amount can be realized, and excellent etching outline can be obtained.
But, if it exceeds above-mentioned scope, then can not there is etching or over etching occurs, and therefore pattern loss and the loss function as metal line may occur.
The composition forming etchant of the present invention preferably has semiconductor technology purity.
Further, the present invention relates to a kind of method manufacturing array substrate for liquid crystal display, having comprised:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; With
E) step of the pixel electrode be connected with source/drain is formed;
Wherein, step a), d) or e) comprises and forms metal level and by the step forming electrode according to etchant etch metal layers of the present invention.
Have superior etch profile electrode according to comprising, the array substrate for liquid crystal display produced by aforesaid method has excellent drive characteristic.
Array substrate for liquid crystal display can be thin film transistor (TFT) array substrate.
By for illustration of and propose and be not interpreted as limiting the following examples of the present invention, the present invention will be described in more detail below.Scope of the present invention has illustrated in detail in the claims, and in addition, the implication containing all modification be equal in the record of claims and scope thereof.
the manufacture of < etchant and the etching of etchant persistent measurement >
embodiment 1-6 and comparative example 1-3
By assigning to prepare etchant with the content of defined (% by weight) one-tenth mixed below described in table 1.
Then, after with above-mentioned composition etching Cu individual layer, etching weather resistance is observed.
The etching of Cu individual layer is performed with the embodiment 1 to 6 of table 1 and the etchant of comparative example 1 to 3.
When performing etching, the temperature of etchant is about 30 DEG C, and performs etching 100 seconds.
By process number be 100 and 5000 time with the naked eye measure EPD (end-point detection respectively, the timing of metal etch) and measure etching weather resistance, the ratio of etch-rate when namely the etch-rate of etchant when number of sheets to be etched is 5000 is 100 with number of sheets to be etched according to time acquisition etch-rate.
[table 1]
Claims (9)
1. an etchant, comprises: the water of metal layer agent, fluorine cpd, phosphoric acid, glycol and surplus,
Wherein, the ratio of the etch-rate when etch-rate of described etchant when pending number of sheets is 5000 is 100 with pending number of sheets is 0.9 to 1.
2. etchant according to claim 1, wherein, described metal layer agent be selected from the group that is made up of hydrogen peroxide, peracetic acid, metal oxide, nitric acid, persulphate, haloid acid and halogen acid salt one or more.
3. etchant according to claim 1, based on the gross weight of described composition, comprises:
The described metal layer agent of 1 % by weight to 40 % by weight;
The described fluorine cpd of 0.1 % by weight to 5 % by weight;
The described phosphoric acid of 0.01 % by weight to 10 % by weight;
The described glycol of 0.1 % by weight to 10 % by weight; With
The water of surplus.
4. etchant according to claim 3, additionally comprises the compound of the nitrogen atom of 0.1 % by weight to 10 % by weight.
5. etchant according to claim 4, comprises hydrogen peroxide as described metal layer agent.
6. etchant according to claim 5, wherein, based on the gross weight of described composition, described composition comprises the described hydrogen peroxide of 1 % by weight to 25 % by weight as described metal layer agent; And
The compound of described nitrogen atom is amino acid.
7. etchant according to claim 1, wherein, described etchant is used for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or their multilayer.
8. etchant according to claim 7, wherein, described multilayer is copper base metal layer/molybdenum base metal layer, copper base metal layer/titanium-based metal layer or copper base metal layer/molybdenum-titanium base alloy layer.
9. manufacture a method for array substrate for liquid crystal display, comprising:
A) on substrate, form the step of grid;
B) on the substrate comprising described grid, form the step of gate insulator;
C) on described gate insulator, form the step of semiconductor layer;
D) on described semiconductor layer, form the step of source/drain; With
E) step of the pixel electrode be connected with described source/drain is formed;
Wherein, described step a), d) or e) comprises formation metal level and etches with etchant according to any one of claim 1 to 8 the step that described metal level forms electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0079389 | 2014-06-27 | ||
| KR1020140079389A KR102209680B1 (en) | 2014-06-27 | 2014-06-27 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105316678A true CN105316678A (en) | 2016-02-10 |
| CN105316678B CN105316678B (en) | 2019-01-22 |
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| CN201510317457.XA Active CN105316678B (en) | 2014-06-27 | 2015-06-11 | Etchant and the method for manufacturing array substrate for liquid crystal display using it |
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|---|---|
| KR (1) | KR102209680B1 (en) |
| CN (1) | CN105316678B (en) |
| TW (1) | TWI662155B (en) |
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| CN108130535A (en) * | 2016-12-01 | 2018-06-08 | 添鸿科技股份有限公司 | The etching solution of titanium-tungsten |
| CN108660458A (en) * | 2017-03-28 | 2018-10-16 | 东友精细化工有限公司 | Metal film etchant and utilize its conductive pattern forming method |
| CN109112543A (en) * | 2017-06-22 | 2019-01-01 | 三星显示有限公司 | Etching composition and method for forming wiring using the same |
| WO2022047854A1 (en) * | 2020-09-02 | 2022-03-10 | Tcl华星光电技术有限公司 | Etching solution composition for etching molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy three-layer metal wiring structure and use thereof |
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| CN108130535A (en) * | 2016-12-01 | 2018-06-08 | 添鸿科技股份有限公司 | The etching solution of titanium-tungsten |
| CN108130535B (en) * | 2016-12-01 | 2020-04-14 | 添鸿科技股份有限公司 | Etching solution for titanium-tungsten alloy |
| CN108660458A (en) * | 2017-03-28 | 2018-10-16 | 东友精细化工有限公司 | Metal film etchant and utilize its conductive pattern forming method |
| CN109112543A (en) * | 2017-06-22 | 2019-01-01 | 三星显示有限公司 | Etching composition and method for forming wiring using the same |
| US11384437B2 (en) | 2017-06-22 | 2022-07-12 | Samsung Display Co., Ltd. | Etchant composition and forming method of wiring using etchant composition |
| WO2022047854A1 (en) * | 2020-09-02 | 2022-03-10 | Tcl华星光电技术有限公司 | Etching solution composition for etching molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy three-layer metal wiring structure and use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201600640A (en) | 2016-01-01 |
| KR102209680B1 (en) | 2021-01-29 |
| KR20160001239A (en) | 2016-01-06 |
| TWI662155B (en) | 2019-06-11 |
| CN105316678B (en) | 2019-01-22 |
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