CN105271101A - MEMS high-vacuum packaging structure based on getter - Google Patents

MEMS high-vacuum packaging structure based on getter Download PDF

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Publication number
CN105271101A
CN105271101A CN201510787784.1A CN201510787784A CN105271101A CN 105271101 A CN105271101 A CN 105271101A CN 201510787784 A CN201510787784 A CN 201510787784A CN 105271101 A CN105271101 A CN 105271101A
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getter
mems
cover plate
high vacuum
encapsulating structure
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CN201510787784.1A
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CN105271101B (en
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赵照
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Hefei Xinfoo Sensor Technology Co Ltd
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Hefei Xinfoo Sensor Technology Co Ltd
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Abstract

The invention provides an MEMS high-vacuum packaging structure based on a getter. The MEMS high-vacuum packaging structure comprises the components of a packaging chamber, an MEMS device and the getter, wherein the MEMS device and the getter are arranged in the chamber. The packaging chamber comprises a packaging substrate and a packaging cover plate. The packaging substrate and the packaging cover plate is provided with a supporting device which is used for supporting the getter so that the getter is suspended in the chamber and does not contact with the inner surface of the packaging chamber. The MEMS high-vacuum packaging structure is provided with the packaging chamber for the supporting device. When the getter is heated and activated in a vacuum environment, heat transfer can be effectively reduced, thereby preventing transmission of a large-amount of generated heat to an IC/MEMS device through the packaging substrate or the packaging cover plate, and preventing adverse effect to the IC/MEMS device. More importantly, activation efficiency and success rate of the getter can be improved. Furthermore packaging structure discard caused by getter activation failure is reduced.

Description

Based on the MEMS high vacuum encapsulating structure of getter
Technical field
The present invention relates to the high vacuum encapsulation of MEMS, particularly a kind of MEMS high vacuum encapsulating structure based on getter.
Background technology
MEMS Vacuum Package is a kind of encapsulation technology adopting seal chamber to provide high gas-tight vacuum environment, under Vacuum Package makes the moving part of MEMS work in vacuum environment, has ensured the quality factor of MEMS.MEMS package occupies very important status in MEMS production process, is that device can key one step of practical application.
The Vacuum Package of MEMS can be divided into device level and wafer scale.The Vacuum Package of wafer scale is cut into slices after referring to and carry out encapsulation operation in units of silicon wafer again, packaging efficiency can be improved, but because chip to be packaged does not detect before packaging, therefore qualification rate is lower, what is more important can waste expensive optical window in the making at infrared thermal imaging sensor optical pickocff, such as germanium window.Therefore, in the optical MEMS sensors such as production infrared thermal imaging, we still adopt traditional device level Vacuum Package, first by one single chip from slice separation former of silicon out, detect qualified after utilize the shells such as metal, pottery or silicon base to complete packaging process successively.
In the encapsulating structure of MEMS, generally adopting getter to absorb the pollutant such as gas, moisture of encapsulation inside cavity slow releasing, being operated in 10 for maintaining MEMS -1~ 10 -2under the high vacuum environment of pa.Putting before this, the activation efficiency of getter and life-span just become one of key extending MEMS service life.In the prior art, usually adopt nonevaporable getter, obtain active surface realize GAS ABSORPTION by carrying out heat activation to getter, the form of getter then mainly contains band shape and film-form.In existing encapsulating structure, such as publication No. is in the application for a patent for invention of CN104022046A, CN104003352A and CN102351141A etc., be that banded getter or film getter are all set directly on substrate or cover plate, getter surface and cavity inner surface are that face contacts closely.This setup Problems existing is in the process of getter being carried out to heat activation (temperature is about 350 ~ 550 ° of C), the heat produced conducts in IC chip or MEMS by cover plate or substrate in a large number, not only harmful effect is caused to packaging, getter activation efficiency also can be caused lowly even to lose efficacy, cause whole MEMS package structure to be scrapped.
Summary of the invention
In order to solve the problem, the present invention, from structure, provides a kind of MEMS high vacuum encapsulating structure based on getter, significantly can reduce heat trnasfer.
The technical solution used in the present invention is: a kind of MEMS high vacuum encapsulating structure based on getter, comprise encapsulation cavity, be arranged on MEMS in cavity and getter, described encapsulation cavity comprises package substrates and encapsulation cover plate, described package substrates or encapsulation cover plate are provided with the bracing or strutting arrangement for supporting getter, make getter be suspended at inside cavity, do not contact with encapsulation cavity inner surface.
Preferably, described bracing or strutting arrangement is arranged in package substrates, is the rib contacted with getter retention wire.
Preferably, described bracing or strutting arrangement is arranged in package substrates, is the salient point contacted with getter holding point.
Preferably, described bracing or strutting arrangement is arranged in package substrates, is the combination of rib and salient point, wherein, and described rib and getter linear contact lay, described salient point and getter point cantact.
Preferably, described bracing or strutting arrangement is arranged on encapsulation cover plate, is the U-shaped hook extended in cavity from encapsulation cover plate.
Preferably, described package substrates is square box shape, has bottom surface and side, encapsulates cavity with encapsulation cover plate in conjunction with formation one cube; Described getter is the surrounding circulating type structure of leaving certain gaps uncovered by the economic plan, its shape and package cavity mates, within one week, be positioned on bracing or strutting arrangement along MEMS routing area periphery, the heat activation welded wire that the two ends that getter is formed by breach are drawn is on the pad in package substrates.
Preferably, described bracing or strutting arrangement is integrated with package substrates or encapsulation cover plate is formed.
Preferably, described getter is banded or film-form, and described banded getter refers to that mid portion is heat activation square banded getter wiry, and described film-form getter refers to the Fe Getter Films Prepared of sputtering sedimentation on heat activation metallic plate.
Preferably, described MEMS high vacuum encapsulating structure is infrared thermal imaging sensor, and described MEMS is infrared focal plane array, and described encapsulation cover plate is by cutting down metal and optical window forms.
Compared with prior art, there is following technique effect in the present invention:
1) novelty of the present invention encapsulation cavity in bracing or strutting arrangement is set, make getter be suspended at inside cavity, not with encapsulation cavity inner surface contact.Adopt the encapsulation cavity of said structure, just its heat trnasfer can be effectively reduced when under vacuum conditions heat activation being carried out to getter, its heat produced can be avoided to be passed in a large number in MEMS by package substrates or encapsulation cover plate on the one hand, adverse effect is caused to MEMS; The more important thing is the activation efficiency and success rate that can improve getter, effectively reduce getter and activate scrapping of the encapsulating structure unsuccessfully caused, improve yield rate further;
2) getter adopted in high vacuum encapsulating structure of the present invention is the surrounding circulating type structure of leaving certain gaps uncovered by the economic plan, place compared to traditional getters side, under the prerequisite reducing encapsulation volume, enlarge markedly getter surface amass, make vacuum in cavity keep more lasting, thus extend the service life of MEMS high vacuum encapsulating structure.
Accompanying drawing explanation
Fig. 1 is perspective view of the present invention;
Fig. 2 is the perspective view that the embodiment of the present invention 1 does not add encapsulation cover plate;
Fig. 3 is the top view that the embodiment of the present invention 1 does not add encapsulation cover plate;
Fig. 4 is the perspective view of the embodiment of the present invention 1 package substrates;
Fig. 5 is the perspective view that the embodiment of the present invention 2 does not add encapsulation cover plate;
Fig. 6 is the top view that the embodiment of the present invention 2 does not add encapsulation cover plate;
Fig. 7 is the perspective view of the embodiment of the present invention 2 package substrates;
Fig. 8 is the embodiment of the present invention 3 package substrates perspective view;
Fig. 9 is the embodiment of the present invention 4 package substrates perspective view;
Figure 10 is the side view of Fig. 1;
Figure 11 is the cross-sectional schematic along A-A direction in Figure 10;
Figure 12 is the perspective view of the embodiment of the present invention 6;
Figure 13 is the side view of the embodiment of the present invention 6;
Figure 14 is the cross-sectional schematic along A-A direction in Figure 13;
Figure 15 is the cross-sectional schematic of the embodiment of the present invention 7.
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described.
The diagram provided in the embodiment of the present invention only illustrates in a schematic way, thus only show the assembly relevant with the present invention but not when implementing according to reality component count, shape and size drafting.
See Fig. 1, be a kind of MEMS high vacuum encapsulating structure 100, comprise encapsulation cavity, be arranged on getter in cavity and MEMS, described encapsulation cavity is made up of package substrates 10 and encapsulation cover plate 40.
Key of the present invention is: in described package substrates 10 or encapsulation cover plate 40, also having the bracing or strutting arrangement for supporting getter, making getter be suspended at inside cavity, does not directly contact with encapsulation cavity inner surface.
Embodiment 1: see Fig. 2 to Fig. 4, in the present embodiment, described package substrates 10 is square box shapes of upper opening, there is bottom surface and side, cavity is encapsulated in conjunction with formation one cube with encapsulation cover plate 40, described bracing or strutting arrangement is the rib 11a with triangle or square cross section, the number of rib 11a is 4, be arranged on 4 drift angles of square box shape package substrates bottom surface, form 1 rib extended to bottom surface and incline both direction, cross section wherein to the rib of incline extension is square, and the cross section of the rib extended to bottom surface is triangle.Described getter is the surrounding circulating type structure of leaving certain gaps uncovered by the economic plan, within one week, be positioned on 4 root bars along MEMS 30 routing area periphery, the heat activation wire 21 that the two ends that getter 20 is formed by breach are drawn is soldered on the pad 12 in package substrates 10, drawn from the side or below by the inner lead below pad, lead-out mode for PGA, CLCC and can plant ball again.
Further, the shape of described rib can also carry out the change of suiting measures to local conditions according to the pattern encapsulating cavity inner surface, such as, can adopt the rib with square cross section when rib is set on incline, and when rib is set in the plane such as side, bottom surface, just can select the rib with triangular cross section, make it contact with getter retention wire.
Embodiment 2: see Fig. 5 to 7, is with the main distinction of embodiment 1: the number of described rib 11a is 8, is separately positioned on the both sides of 4 drift angles in square box shape encapsulation cavity bottom surface, and every root bar extends respectively to bottom surface and side; Described getter is the surrounding circulating type structure of leaving certain gaps uncovered by the economic plan, within one week, is positioned on 8 root bars along MEMS routing area periphery, and the heat activation welded wire that the two ends that getter is formed by breach are drawn is on the pad in package substrates.
Embodiment 3: see Fig. 8, is with the main distinction of embodiment 2: substituted by the multiple salient point 11b of 8 root bar 11a described in embodiment 2, make it contact with getter holding point.Described salient point can also be arranged on bottom surface or bottom surface and side.In the present embodiment, the bottom surface of package substrates is smooth, and therefore the height of described salient point is consistent, and is used for ensureing the steady placement of getter.
Embodiment 4: see Fig. 9, be with the main distinction of embodiment 2: described bracing or strutting arrangement can also be the combination of rib and salient point, such as rib is set on bottom surface, side is selected one or more salient point, be used for assisted inhalation agent steady placement or be that salient point is set on bottom surface, and on side select rib is set.Clearly, relative to rib, the area that salient point occupies on encapsulation cavity inner surface is less, and its heat trnasfer produced can be less.
As can be seen from above-described embodiment, in production application, the number of described rib and salient point and set-up mode can also have other several modes, and this description embodiment can not be exhaustive.It should be noted that ensure getter stable placement prerequisite under, the area that described rib or salient point occupy on cavity inner surface more at least heat trnasfer can reduce more.
Embodiment 5: see Figure 10 and 11, described bracing or strutting arrangement is arranged on encapsulation cover plate 40, is the U-shaped hook 41 extended in cavity from encapsulation cover plate 40.Described U-shaped hook is for supporting getter, and its shape and size match with getter, and number can set as required.
Further, described bracing or strutting arrangement, such as rib or salient point can integratedly with package substrates be formed, and U-shaped hook can integratedly with encapsulation cover plate be formed, the preparation method of integration effectively can reduce the complexity of production technology, makes the increase of bracing or strutting arrangement to production cost become very little.Described rib, salient point and package substrates preferably adopt pottery or silicon materials to be made.
Novelty of the present invention in package substrates or encapsulation cover plate, bracing or strutting arrangement is set, make getter be suspended at encapsulation inside cavity, not with encapsulation cavity inner surface contact.There is the encapsulation cavity of above-mentioned bracing or strutting arrangement, just its heat trnasfer can be effectively reduced when under vacuum conditions heat activation being carried out to getter, its heat produced can be avoided to be passed on IC/MEMS device in a large number by package substrates or encapsulation cover plate on the one hand, adverse effect is caused to IC/MEMS device; Activation efficiency and the success rate of getter can be improved on the other hand, reduce because getter activates scrapping of the MEMS package structure unsuccessfully caused, improve yield rate further.
In addition, the getter adopted in the present invention is the surrounding circulating type structure of leaving certain gaps uncovered by the economic plan, place compared to traditional getters side, under the prerequisite reducing encapsulation volume, enlarge markedly getter surface amass, make vacuum in cavity keep more lasting, extend the service life of MEMS high vacuum encapsulating structure.
Embodiment 6: see Figure 12 and Figure 13, described MEMS high vacuum encapsulating structure is infrared thermal imaging sensor, and MEMS is wherein infrared focal plane array, and encapsulation cover plate is by cutting down metal 41 and optical window 42 forms.Described optical window can be germanium window, for projecting infrared signal.In such sensor, preferably bracing or strutting arrangement is set in package substrates.
Embodiment 7: see Figure 14, getter is in the above-described embodiments banded getter 20a, and namely mid portion is the square banded getter 20a of heat activation wire 21a, therefore directly can be drawn by activator metal silk 21a and be soldered on pad 12.But getter of the present invention can also be film-form getter 20b, be namely the Fe Getter Films Prepared 20b of sputtering sedimentation on heat activation metallic plate 21b, see Figure 15.The heat activation of Fe Getter Films Prepared by drawing one section of heat activation wire at heat activation metallic plate two ends, can be soldered on pad and be realized.Described heat activation wire is preferably molybdenum filament, and molybdenum filament has excellent heat-conductive characteristic and good hardness, and getter can be helped better to be fixed on rib.Described getter is preferably the alloy of zirconium, vanadium and iron, titanium.
The package substrates that we adopt in the above-described embodiments is the package substrates of square box shape, but the present invention can also be applied in the package substrates of other shapes, rib or the salient point that such as only can arrange triangular cross section when package substrates is plane on bottom surface realize, when the bottom surface of package substrates is not plane time, such as in concave surface or convex surface time can also be guaranteed the stable placement of getter by adjustment rib or the height of salient point and size.
In order to ensure the stable placement of surrounding circulating type getter, the rib number that we select is 4 or 8, and salient point is also arranged near each drift angle of square box shape package substrates.But adaptive adjustment can be carried out in the position of rib and salient point and number when we select the getter of other shapes.Therefore, the present invention is not limited to surrounding around the getter placed.
In a word, these are only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention, within scope of the present invention, the equivalents make the present invention or amendment all should be included within protection scope of the present invention.

Claims (9)

1. the MEMS high vacuum encapsulating structure based on getter, comprise encapsulation cavity, be arranged on MEMS in cavity and getter, described encapsulation cavity comprises package substrates and encapsulation cover plate, it is characterized in that: in described package substrates or encapsulation cover plate, be provided with the bracing or strutting arrangement for supporting getter, make getter be suspended at inside cavity, do not contact with encapsulation cavity inner surface.
2. a kind of MEMS high vacuum encapsulating structure based on getter according to claim 1, it is characterized in that: described bracing or strutting arrangement is arranged in package substrates, is the rib contacted with getter retention wire.
3. a kind of MEMS high vacuum encapsulating structure based on getter according to claim 1, it is characterized in that: described bracing or strutting arrangement is arranged in package substrates, is the salient point contacted with getter holding point.
4. a kind of MEMS high vacuum encapsulating structure based on getter according to claim 1, it is characterized in that: described bracing or strutting arrangement is arranged in package substrates, is the combination of rib and salient point, wherein, described rib and getter linear contact lay, described salient point and getter point cantact.
5. a kind of MEMS high vacuum encapsulating structure based on getter according to claim 1, it is characterized in that: described bracing or strutting arrangement is arranged on encapsulation cover plate, is the U-shaped hook extended in cavity from encapsulation cover plate.
6. a kind of MEMS high vacuum encapsulating structure based on getter as claimed in any of claims 1 to 5, is characterized in that: described package substrates is square box shape, has bottom surface and side, with encapsulation cover plate in conjunction with the cuboidal encapsulation cavity of formation one; Described getter is the surrounding circulating type structure of leaving certain gaps uncovered by the economic plan, its shape and package cavity mates, within one week, be positioned on bracing or strutting arrangement along MEMS routing area periphery, the heat activation welded wire that the two ends that getter is formed by breach are drawn is on the pad in package substrates.
7. a kind of MEMS high vacuum encapsulating structure based on getter as claimed in any of claims 1 to 5, is characterized in that: described bracing or strutting arrangement is integrated with package substrates or encapsulation cover plate to be formed.
8. a kind of MEMS high vacuum encapsulating structure based on getter as claimed in any of claims 1 to 5, it is characterized in that: described getter is banded or film-form, described banded getter refers to that mid portion is heat activation square banded getter wiry, and described film-form getter refers to the Fe Getter Films Prepared of sputtering sedimentation on heat activation metallic plate.
9. a kind of MEMS high vacuum encapsulating structure based on getter as claimed in any of claims 1 to 5, it is characterized in that: described MEMS high vacuum encapsulating structure is infrared thermal imaging sensor, described MEMS is infrared focal plane array, and described encapsulation cover plate is by cutting down metal and optical window forms.
CN201510787784.1A 2015-11-17 2015-11-17 MEMS fine vacuum encapsulating structures based on getter Active CN105271101B (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105692545A (en) * 2016-04-06 2016-06-22 合肥芯福传感器技术有限公司 Electric heating activating device of getter
CN105731355A (en) * 2016-04-29 2016-07-06 合肥芯福传感器技术有限公司 Integrated multifunctional ceramic packaging tube shell
CN105731357A (en) * 2016-04-29 2016-07-06 合肥芯福传感器技术有限公司 Integrated air-suction type ceramic packaging tube shell
CN107228736A (en) * 2017-07-20 2017-10-03 中国电子科技集团公司第四十九研究所 A kind of miniaturized capacitance formula vacuum pressure sensor encapsulating structure
CN107316844A (en) * 2017-06-22 2017-11-03 江苏物联网研究发展中心 Electrical activation sealing cap structure for wafer-level vacuum packaged getter
CN109761188A (en) * 2018-12-25 2019-05-17 合肥芯福传感器技术有限公司 A kind of wafer-level vacuum encapsulating method
CN115196081A (en) * 2022-07-14 2022-10-18 宁波齐云新材料技术有限公司 High vacuum packaging equipment

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195414A (en) * 1998-12-28 2000-07-14 Canon Inc Getter device and plate type image display device using the same
US20060250086A1 (en) * 2004-07-16 2006-11-09 Frank Yang Vacuum Getter Chamber
CN102610619A (en) * 2012-03-29 2012-07-25 江苏物联网研究发展中心 Wafer-level vacuum encapsulated infrared focal plane array (IRFPA) device and method for producing same
CN102951594A (en) * 2011-08-26 2013-03-06 昆山光微电子有限公司 Tube shell for vacuum package of micro-optical-electronic-mechanic system and manufacture method thereof
CN102997999A (en) * 2012-11-26 2013-03-27 烟台睿创微纳技术有限公司 Infrared focal plane array detector
CN104022046A (en) * 2014-06-13 2014-09-03 中国科学院上海微系统与信息技术研究所 Mixed wafer level vacuum packaging method and structure based on banding getter
CN104340952A (en) * 2013-08-09 2015-02-11 比亚迪股份有限公司 MEMS (Micro Electro-Mechanical System) wafer level vacuum packaging method and structure
CN205133146U (en) * 2015-11-17 2016-04-06 合肥芯福传感器技术有限公司 High vacuum packaging structure of MEMS based on getter

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195414A (en) * 1998-12-28 2000-07-14 Canon Inc Getter device and plate type image display device using the same
US20060250086A1 (en) * 2004-07-16 2006-11-09 Frank Yang Vacuum Getter Chamber
CN102951594A (en) * 2011-08-26 2013-03-06 昆山光微电子有限公司 Tube shell for vacuum package of micro-optical-electronic-mechanic system and manufacture method thereof
CN102610619A (en) * 2012-03-29 2012-07-25 江苏物联网研究发展中心 Wafer-level vacuum encapsulated infrared focal plane array (IRFPA) device and method for producing same
CN102997999A (en) * 2012-11-26 2013-03-27 烟台睿创微纳技术有限公司 Infrared focal plane array detector
CN104340952A (en) * 2013-08-09 2015-02-11 比亚迪股份有限公司 MEMS (Micro Electro-Mechanical System) wafer level vacuum packaging method and structure
CN104022046A (en) * 2014-06-13 2014-09-03 中国科学院上海微系统与信息技术研究所 Mixed wafer level vacuum packaging method and structure based on banding getter
CN205133146U (en) * 2015-11-17 2016-04-06 合肥芯福传感器技术有限公司 High vacuum packaging structure of MEMS based on getter

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105692545A (en) * 2016-04-06 2016-06-22 合肥芯福传感器技术有限公司 Electric heating activating device of getter
CN105731355A (en) * 2016-04-29 2016-07-06 合肥芯福传感器技术有限公司 Integrated multifunctional ceramic packaging tube shell
CN105731357A (en) * 2016-04-29 2016-07-06 合肥芯福传感器技术有限公司 Integrated air-suction type ceramic packaging tube shell
CN105731355B (en) * 2016-04-29 2017-05-31 合肥芯福传感器技术有限公司 Integrated multi-functional ceramic package shell
CN107316844A (en) * 2017-06-22 2017-11-03 江苏物联网研究发展中心 Electrical activation sealing cap structure for wafer-level vacuum packaged getter
CN107316844B (en) * 2017-06-22 2019-05-31 江苏物联网研究发展中心 Electrical activation sealing cap structure for wafer-level vacuum packaged getter
CN107228736A (en) * 2017-07-20 2017-10-03 中国电子科技集团公司第四十九研究所 A kind of miniaturized capacitance formula vacuum pressure sensor encapsulating structure
CN109761188A (en) * 2018-12-25 2019-05-17 合肥芯福传感器技术有限公司 A kind of wafer-level vacuum encapsulating method
CN115196081A (en) * 2022-07-14 2022-10-18 宁波齐云新材料技术有限公司 High vacuum packaging equipment
CN115196081B (en) * 2022-07-14 2024-03-22 宁波齐云新材料技术有限公司 High vacuum packaging equipment

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