CN105269730A - New technology for removing flash of semiconductor package body through lasers - Google Patents
New technology for removing flash of semiconductor package body through lasers Download PDFInfo
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- CN105269730A CN105269730A CN201510557624.8A CN201510557624A CN105269730A CN 105269730 A CN105269730 A CN 105269730A CN 201510557624 A CN201510557624 A CN 201510557624A CN 105269730 A CN105269730 A CN 105269730A
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Abstract
The invention discloses a new technology for removing flash of a semiconductor package body through lasers. The new technology comprises near-infrared pulse laser focus vaporization, laser beam shaping, multi-template pattern filling and whole flash area scanning through a galvanometer. After flash on the front face of a semiconductor IC stripe is removed through vaporization via the first-path double-beam laser, then the IC stripe is automatically overturned, and the flash on the reverse face is removed through the second-path double-beam laser. Accordingly, the flash removing technology is economical, environment-friendly, efficient and reliable.
Description
Technical field
The present invention relates to a kind of semiconducter IC strap seal body flash and remove technique, particularly a kind of semiconductor packages volumetric laser goes the new technology of flash.
Background technology
Flash is the fifth wheel flowing to pin in IC integrated circuit plastic packaging process and expose on carrier.In the manufacture process adopting particular manufacturing craft injection moulding and heat hardening, the irregular flash remained at IC chi frame and pin place is almost inevitable, the electric property of itself on plastic packaging product does not affect, but because the plastic packaging material overflowed covers on terminal pin, remove if do not added or still have residual after removal, will plating defect be formed and affect the reliability of product, cause product open circuit, the problems such as rosin joint, affect the electrically conducting performance of pin, serious meeting causes chip functions inefficacy even to be scrapped, therefore flash technique is gone to be very important pretreatment procedure in electronic-packaging processes.
Flash phenomena usually occurs in mould deciliter position, as the place such as die joint, the gap of mold insert, the hole of apical pore of mould.Flash solves not in time will magnify further, thus causes impressing mould to form subsiding of local, causes permanent infringement.The main conditions that flash occurs have following several:
1, the back side of carrier is exposed: the carrier that exposes of flat four banding dresses should be rectangle, becomes irregular figure due to flash now.It should be uniformity that carrier color is exposed at the back side, occurs pattern due to flash.
2, pin front and side: there is more flash metal pins front and side.
3, the pin root of formed product: the pin root of formed product has flash.
At present, technique removed by the flash that domestic and international semiconducter IC encapsulation factory owner wants following three kinds:
1, high-pressure water jet technique: the IC band after first completing plastic packaging carries out solvent and softens, and then sprays it with the High-Pressure Water of 2000 ~ 6500psi, thus reach flash removal object.
2, high pressure liquid sandblast technique: similar with high-pressure water jet technique, just adds silica sand particles and synchronously sprays, utilize the kinetic energy friction of particulate in water under high pressure, improves removal quality and the speed of flash.
3, laser cutting parameter: first the IC band containing irregular flash is carried out vision location accurately, then laser cutting is carried out in junction laser focusing bundle being aimed at flash and packaging body and pin, flash is separated with packaging body part, finally adopt high-pressure water jet, reach flash and remove object.
Remove in techniques at above-mentioned three kinds of common flashes, high-pressure water jet mode has technical maturity, efficiency is higher, equipment price is lower advantage, but owing to being contact processing, inevitably produces the problems such as body breakage, thin wafer damage in technical process.Meanwhile, because softening solvent generally adopts alkali organic solvent, containing the grains of sand and flash particle after high-pressure water jet, need at substantial resource to carry out liquid waste processing after going flash to terminate, otherwise can problem of environmental pollution be caused.
Although laser cutting goes flash technique to substantially reduce solvent soften the time, improve flash and remove quality, but high-pressure water jet operation can not be omitted, laser cutting mode needs to adopt hi-Fix simultaneously, in order to avoid damage from laser packaging body and pin cause chip rejection, therefore go that flash efficiency is lower, equipment cost is higher, the economy of technical process is not high, does not thoroughly solve environmental pollution hidden danger yet.Therefore, laser cutting removal flash mode is not almost widely applied.
Summary of the invention
For above-mentioned the deficiencies in the prior art part, the invention provides the new technology that a kind of semiconducter IC strap seal volumetric laser removes flash, efficiently solve above-mentioned prior art Problems existing.
To achieve these goals, the technical solution used in the present invention is: adopt a high power near infrared pulsed laser device, after laser beam shaping, be divided into two bundle laser and enter two optical scanners respectively, through field flattening lens focusing illumination in all regions may containing flash, under computer software control, the staggered mode of multiple pattern filling template is adopted to carry out laser scanning, the high-peak power instant vaporization flash of laser pulse, make it spray under the effect of pressure for vaporization and depart from IC encapsulation band, finally take out dirt device by air-breathing extract the air containing flash particle and collect flash dust after filtering.After the flash in semiconducter IC band front is removed by the vaporization of first via double light beam laser, then the removal of reverse side flash will be carried out after IC band automatic turning by the second road double light beam laser.Complete flash remove after IC encapsulate band without the need to carrying out the operation such as high-pressure water jet, cleaning again, directly can enter plating or cut the subsequent processings such as muscle, thus realize efficient, reliable, economy, the flash of environmental protection removes technique.
As preferably, described high power near infrared pulsed laser device adopts the optical fiber laser of pulse tuning Q, and wavelength is about 1um, frequency 20 ~ 200KHZ, average output power 50 ~ 200W, utilizes the laser peak power density instant vaporization flash of its high repetition frequency Q impulse.
As preferably, described optical scanner adopts digital optical scanning galvanometer to complete, utilize its at a high speed, accurate deflection characteristic, coordinate the f-theta mirror of corresponding breadth, laser focusing bundle acted on flash body, reach the object removing flash fast.
As preferably, the pattern filling template of laser scanning adopts rhombus, wave molding, cross spider and staggered combination thereof, to reach the object evenly removing flash.
As preferably, described laser optics reshaper adopts high efficiency diffraction-type shaping mirror, be flat-top distribution (Top-hat pattern) by Gauss's light intensity distribution transformation of horizontal for laser beam light field, the light distribution of homogenize laser focal spot, control and improve focus place laser power density and capacity usage ratio, strong point when simultaneously avoiding laser scanning in Gaussian beam profile damages the metal pins of packaging body.
As preferably, this technique adopts two-way four to restraint laser and acts on the obverse and reverse encapsulating band with IC simultaneously, by the automatic turning of IC band, realizes the synchronous removal of packaging body positive and negative flash, reaches efficiently, flash removal effect thoroughly.
Compared with prior art, this beneficial effect of the invention: technology is removed in employing flash laser vaporization of the present invention, multiple scan pattern, without the need to the subsequent treatment such as chemical tendering, high-pressure water jet operation, high efficient and reliable, environmental protection.Using laser-light beam shaping technique, is flat top beam (Top-hat) by Gauss beam reshaping, the light distribution of homogenize laser focal spot, controls focus place power density, ensures that pin is injury-free.Application high power pulse Fiber laser technology, ensure high reliability and the service life of whole system, laser instrument service life reaches tens thousand of hours.Two-way 50W ~ 200W laser power, effectively improves equipment capacity.Automatic turning, two-way four laser head, front-back two-sided laser remove flash, stop pin side flash completely remaining.
Accompanying drawing explanation
Fig. 1 is laser vaporization scanning area schematic diagram;
Fig. 2 is laser vaporization scanning encapsulating structure schematic diagram;
Fig. 3 is laser scanning filling template superposition schematic diagram;
Fig. 4 is the operation schematic diagram implementing whole set equipment;
Fig. 5 laser beam Gauss surface of intensity distribution;
Fig. 6 is the laser beam flat-top surface of intensity distribution.
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
See Fig. 1-6, complete automatic charging and detect through Vision counnter attack, comprising the semiconducter IC band of flash by below track transmission to first via double light beam laser probe.Be fixed on front after being located by contact pin and go to flash region.A branch of 50 ~ 200W high power near-infrared adjusting Q pulse laser, after light distribution is converted to flat top beam by beam shaping, be divided into the identical laser of two beam intensities by 45 degree of spectroscopes and enter two optical scanners respectively, focus on the IC banded zone shown in Fig. 1,2 through respective field flattening lens.Under computer software control, according to the array of templates adjusting the elements of a fix and multiple pattern filling in advance, optical scanner controls laser spot and scans flash region successively, flash is formed particle by the high-peak power instant vaporization of laser pulse, upwards spray under pressure for vaporization effect and then depart from IC band, extracted containing the air of flash particle by getter device, and collect after filtering, store flash dust.After semiconducter IC band front flash is removed by first via laser vaporization, then by IC band automatic turning, below the double light beam laser probe of orbit transports to the second road, repeat said process and complete the removal of reverse side flash and the collection of flash dust.Last semiconducter IC band puts into magazine by automatic blanking device.In the present embodiment, this technique carries out automatic loading/unloading by the full-automatic loading and unloading system of material box type, the positive and negative detection of band is carried out by Vision detection system, positioned by four contact pins with bar tape frame locating hole exact matching, the through type track being conveyed through DC motor Driver of IC band completes.
Laser vaporization scanning of the present invention goes flash technology to adopt laser scanning methods, uses laser optics shaping technique, improves utilization ratio of laser energy 40 ~ 50%, and uniformity and the Duplication of hot spot distribution significantly improve, and ensure the uniformity of flash removal effect.According to damage thresholds different between metal and plastic packaging material, the laser peak power density at accurate control focus place, under guarantee does not damage the prerequisite on metal pin surface, all flashes in instant vaporization laser spot scans region, and taken away by the flash powder after vaporization by dust collecting system, thus reach the effect of removing flash fast.For reaching good flash removal effect, utilize the high speed of digital scanning galvanometer, high accuracy characteristic, the multiple pattern filling scan patterns such as optimum organization rhombus, wave molding, cross spider, two-way light splitting carries out scanning vaporization flash to whole band simultaneously, reaches fast fully, the removal effect of uniformity.
Main performance and the technical parameter of the concrete case study on implementation of the present invention are:
Laser type: Q impulse optical fiber laser
Optical maser wavelength: 1060 ~ 1070nm
Maximum laser average output power: 100 ~ 200W
Laser work frequency: 100KHZ (representative value)
Focus lamp focal length: 254mm (representative value)
Undistorted scanning area: 150mmX300mm (bidifly shaven head)
The laser vaporization degree of depth: 20 ~ 1200um
Positioning precision: be less than 50um
Go flash speed: 8000/hour (SOT89 encapsulation)
Complete machine maximum power dissipation: 1800W
In sum, the foregoing is only wherein embodiment of the present invention, for those skilled in the art without departing from the principles of the present invention, can also make improvements and retouch, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. semiconducter IC strap seal volumetric laser goes a new technology for flash, it is characterized in that: this technique comprises near infrared pulsed laser and focuses on vaporization, laser beam shaping, multi-template filling graph, the whole flash region of vibration mirror scanning vibration mirror scanning; After the flash in semiconducter IC band front is removed by the vaporization of first via double light beam laser, then the removal of reverse side flash will be carried out after IC band automatic turning by the second road double light beam laser.
2. a kind of semiconducter IC strap seal volumetric laser according to claim 1 goes the new technology of flash, it is characterized in that: described laser vaporization scanning adopts Q impulse optical fiber laser or the solid state laser of near-infrared wavelength, the laser beam focus exported, on flash body, utilizes its laser peak power density instant vaporization flash.
3. a kind of semiconducter IC strap seal volumetric laser according to claim 1 goes the new technology of flash, it is characterized in that: adopt digital optical scanning galvanometer to carry out laser scanning, utilize its deflection characteristic, coordinate f-theta mirror, make the laser beam after focusing one by one stepless action on flash body.
4. a kind of semiconducter IC strap seal volumetric laser according to claim 3 goes the new technology of flash, it is characterized in that: the permutation and combination of the laser scanning line of laser scanning is the optimum organization of several pattern filling template, filling template is rhombus, wave molding, cross spider and staggered combination thereof.
5. a kind of semiconductor packages volumetric laser according to claim 1 goes the new technology of flash, it is characterized in that: described laser beam shaping adopts diffraction or physical optics principle to carry out the conversion of light distribution, change the Gaussian Profile of horizontal for pulse laser light field into flat-top distribution, by controlling the light distribution homogenize focus place power density of laser focal spot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510557624.8A CN105269730A (en) | 2015-09-02 | 2015-09-02 | New technology for removing flash of semiconductor package body through lasers |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510557624.8A CN105269730A (en) | 2015-09-02 | 2015-09-02 | New technology for removing flash of semiconductor package body through lasers |
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| CN105269730A true CN105269730A (en) | 2016-01-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115113409A (en) * | 2022-08-26 | 2022-09-27 | 成都莱普科技股份有限公司 | Linear flat-top light spot generation system, method and equipment based on Dammann grating |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102101217A (en) * | 2011-02-28 | 2011-06-22 | 深圳市大族激光科技股份有限公司 | Laser cutting device |
| CN102473651A (en) * | 2009-07-06 | 2012-05-23 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device |
| CN103985644A (en) * | 2013-02-13 | 2014-08-13 | 精工电子有限公司 | Resin sealed type semiconductor device manufacture method and lead pin rack |
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2015
- 2015-09-02 CN CN201510557624.8A patent/CN105269730A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102473651A (en) * | 2009-07-06 | 2012-05-23 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device |
| CN102101217A (en) * | 2011-02-28 | 2011-06-22 | 深圳市大族激光科技股份有限公司 | Laser cutting device |
| CN103985644A (en) * | 2013-02-13 | 2014-08-13 | 精工电子有限公司 | Resin sealed type semiconductor device manufacture method and lead pin rack |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115113409A (en) * | 2022-08-26 | 2022-09-27 | 成都莱普科技股份有限公司 | Linear flat-top light spot generation system, method and equipment based on Dammann grating |
| CN115113409B (en) * | 2022-08-26 | 2022-12-30 | 成都莱普科技股份有限公司 | Linear flat-top light spot generation system, method and equipment based on Dammann grating |
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Application publication date: 20160127 |
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