CN105244313A - Interconnection manufacturing method for film through holes in substrate - Google Patents
Interconnection manufacturing method for film through holes in substrate Download PDFInfo
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- CN105244313A CN105244313A CN201510566421.5A CN201510566421A CN105244313A CN 105244313 A CN105244313 A CN 105244313A CN 201510566421 A CN201510566421 A CN 201510566421A CN 105244313 A CN105244313 A CN 105244313A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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Abstract
The invention provides an interconnection manufacturing method for film through holes in a substrate. A composite adhesive layer is sputtered on the upper surface of the clean substrate; photoetching is carried out on the composite adhesive layer to form a film conduction band photoetching graph; a composite metal layer is electroplated, and a Cu layer is electroplated on the surface; removing of photoresist is carried out; photoetching is carried out at a corresponding through hole column above the Cu layer, and a film through hole photoetching graph is formed; wet etching is carried out, and the Cu layer exposed on the surface and the composite adhesive layer are removed; removing of photoresist is carried out; spin coating of benzocyclobutene (BCB) is carried out, development processing is carried out, and a dielectric film through hole graph is formed through photoetching; an ultrasonic development method is used, and development residues are removed; wet etching is carried out, the exposed Cu layer at the corresponding film through hole is removed, and the substrate is monitored online until the composite metal layer is exposed in all film through holes; the BCB dielectric layer is cured, and interconnection of film through holes in the substrate is completed. Problems that the process in the prior art is complicated, the contact resistance is large, reliability is low, through hole connection and disconnection detection can not be realized online, and the like are overcome, and interconnection of high-density through holes of multi-layer wiring of the film can be realized.
Description
Technical field
The invention belongs to microelectronics Packaging field, particularly be high-density film through-hole interconnection manufacture method based on LTCC (LTCC) substrate.
Background technology
Along with electronic system towards high frequency, at a high speed, multi-functional, miniaturization development, particularly the developing rapidly of highly integrated with intensive input/output port number of semiconductor chip, if high density interconnect do not accomplished by the substrate of carries chips, the bottleneck that entire system performance improves will be become.Substrate carries out thin film multilayer wiring, has that interconnection density is high, signal transmission delay is little, integrated level advantages of higher, the overall performance of system can be significantly improved, and be used widely in large high-speed computer system, digital communication system.But due to its high-density wiring feature, film through-hole interconnection number is large, and such as one piece of 40mm × 40mm substrate through-hole number can reach more than 1600, and its interlinking reliability will have a strong impact on signal interconnection transmission performance, and then influential system performance, thus in the urgent need to improving through-hole interconnection reliability.
At present, two kinds are mainly contained for film through-hole interconnection technique manufacturing method on substrate.
Method one: the interface processing of substrate, substrate surface forms conduction band figure, by etching through hole figure on polyimide film, then evaporates conductor layer, while formation wiring conductor layer, also complete film through-hole interconnection.The method technique is simple, but it is large to there is through hole contact resistance, and especially on substrate, through hole surface roughness is comparatively large, and easy existence development is residual and cause through hole to occur breaking phenomena.
Method two: the interface processing of substrate, substrate surface forms conduction band figure, plating Cu through hole post, the polyimides of spin coating is after solidification, attenuated polishing exposes Cu through hole post, then evaporates conductor layer, while formation wiring conductor layer, also complete film through-hole interconnection.Such as, Patent Office of the People's Republic of China invention disclosed number of patent application CN200910251523.2 a kind of realizes the method for thin film multilayer wiring and the one of CN201210303440.5 based in ltcc substrate thin film multilayer wiring manufacture method on ltcc substrate, all have employed the method for plating Cu through hole pole interconnection, and protection against oxidation measure has been carried out to Cu through hole post, but its Wiring technique is complicated, and polyimide media layer and plating Cu through hole post can be dealt with improperly because of attenuated polishing, cause media coating surface damage and Cu through hole post blemish and oxidation, affect film through-hole interconnection reliability.In addition, polyimides is all have employed as media coating in above-mentioned two disclosed patent documentations, water absorption is larger, reliability is not good, and when high-density film through-hole interconnection number is large, all cannot carry out on-line checkingi directly perceived to film through-hole interconnection break-make, be difficult to ensure inter-level vias interlinking reliability.
Summary of the invention
Object to be solved by this invention is to provide film through-hole interconnection manufacture method on substrate, overcomes the complex process in existing film through-hole interconnection technology, contact resistance is large, reliability is low, cannot realize in problems such as line three-way hole break-make detections.
For solving the problem, the present invention proposes film through-hole interconnection manufacture method on a kind of substrate, comprises the following steps:
(a1) provide one with the substrate of multiple through hole post, carry out grinding and polishing, and clean burnishing surface, be dried process after cleaning to upper surface of base plate, cleaning dried substrate are heat-treated, and carry out second time clean after heat treatment to it;
(a2) on clean upper surface of base plate, sputtered with Ti W and Cu forms compound adhesion layer successively;
(a3) on the compound adhesion layer of substrate, carry out first time photoetching, form film conduction band litho pattern in substrate through-hole post position;
(a4) on the film conduction band litho pattern of substrate, electroplate Cu, Ni, Au successively form complex metal layer, and at complex metal layer electroplating surface one Cu layer;
(a5) photoresist is removed;
(a6) on the Cu layer of substrate, second time photoetching is carried out in corresponding through hole post position, forms the film through hole litho pattern of covered substrate through hole post position;
(a7) adopt wet corrosion technique, the Cu layer of exposed surface on substrate and compound adhesion layer are removed;
(a8) photoresist is removed;
(a9) the upper surface of base plate spin coating phenylpropyl alcohol cyclobutane after removing photoresist, development treatment, photoetching forms the deielectric-coating via hole image of BCB dielectric layer;
(a10) on the substrate forming deielectric-coating via hole image, utilize ultrasonic development method, the development of removing corresponding through hole post place on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual;
(a11) carrying out wet etching to removing the substrate after remaining that develops, removing the Cu layer that corresponding film through hole is exposed, on-line monitoring substrate is until expose complex metal layer in whole film through hole;
(a12) to the substrate solidification BCB dielectric layer removed after Cu layer;
(a13) (a2) to (a12) step is repeated, the film through-hole interconnection of completing substrate.
According to one embodiment of present invention, step (a1) comprising:
A111: provide one with the substrate of through hole post, grinding and polishing is carried out to upper surface of base plate, makes its upper surface roughness lower than 0.1 μm;
A112: clean substrate polishing face, adopts acetone ultrasonic cleaning, alcohol ultrasonic cleaning, deionized water ultrasonic cleaning successively;
A113: by substrate dehydration of alcohol after cleaning, is dried up with nitrogen and/or inert gas;
A114: by cleaning and dried substrate put into 400 DEG C of vacuum drying ovens and under nitrogen and/or inert gas atmosphere, substrate heat-treated;
A115: use plasma to carry out second time cleaning to the substrate after heat treatment.
According to one embodiment of present invention, the photoresist that described first time photoetching and/or second time photoetching use is negative photoresist.
According to one embodiment of present invention, in step (a4), the Cu film thickness scope of complex metal layer is 3 ~ 5 μm, the thickness range of Ni film is 0.5 ~ 1 μm, the thickness range of Au film is 0.5 ~ 1 μm, and the Cu layer thickness scope on complex metal layer surface is 0.5 ~ 1 μm.
According to one embodiment of present invention, the wet corrosion technique of step a (7), and/or the wet corrosion technique of step a (11), the volume ratio of Cu corrosive liquid each component is HCl:H
2o
2: H
2o=1:3:20, etching time is 2 ~ 10s, TiW corrosive liquid is H
2o
2, etching time is 5 ~ 15min.
According to one embodiment of present invention, in step (a9), carry out the technique of spin coating tackifier, tackifier baking, spin coating phenylpropyl alcohol cyclobutane, front baking, contact exposure, development front baking, immersion development successively, photoetching forms the deielectric-coating via hole image of BCB dielectric layer, wherein, phenylpropyl alcohol cyclobutane thickness is 4 ~ 7 μm, and immersion development temperature is 35 ~ 40 DEG C, and immersion developing time is 2 ~ 4min.
According to one embodiment of present invention, step (a10) comprises further:
A101: carry out ultrasonic development on the substrate forming BCB deielectric-coating via hole image, wherein, supersonic frequency is 120kHz ~ 170kHz, and the ultrasonic development time is 1 ~ 5min;
A102: fixing under the substrate after ultrasonic development is placed in normal temperature fixing solution, fixing time is 1 ~ 2min;
A103: by the wafer rinse 20s after fixing, the development of removing corresponding through hole post place on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual;
A104: use nitrogen and/or inert gas to dry up after base-plate cleaning;
A105: substrate is placed in 80 DEG C ~ 100 DEG C baking ovens and dries about 1min.
According to one embodiment of present invention, in step (a12), the substrate solidification after removing Cu layer is comprised:
Substrate BCB is carried out softcure, is slowly warmed up to about 210 DEG C and maintains 40min, naturally dropping to room temperature afterwards;
By the BCB of substrate is solidified firmly after softcure, be slowly warmed up to about 250 DEG C and maintain 60min, naturally dropping to room temperature afterwards.
In order to solve the problem, present invention also offers film through-hole interconnection manufacture method on a kind of substrate, comprising the following steps:
(b1) provide one with the substrate of multiple through hole post, carry out grinding and polishing, and clean burnishing surface, be dried process after cleaning to upper surface of base plate, cleaning dried substrate are heat-treated, and carry out second time clean after heat treatment to it;
(b2) on clean upper surface of base plate, sputtered with Ti W and Cu forms compound adhesion layer successively;
(b3) on the compound adhesion layer of substrate, carry out first time photoetching, form film conduction band litho pattern in substrate through-hole post position;
(b4) on the film conduction band litho pattern of substrate, electroplate Cu, Ni, Au successively form complex metal layer;
(b5) photoresist is removed;
(b6) on the complex metal layer of substrate, second time photoetching is carried out in corresponding through hole post position, forms the film through hole litho pattern of covered substrate through hole post position;
(b7) adopt wet corrosion technique, the compound adhesion layer of exposed surface on substrate is removed;
(b8) photoresist is removed;
(b9) the upper surface of base plate spin coating phenylpropyl alcohol cyclobutane after removing photoresist, development treatment, photoetching forms the deielectric-coating via hole image of BCB dielectric layer;
(b10) on the substrate forming deielectric-coating via hole image, carry out ultrasonic development, the development of removing corresponding through hole post on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual, exposes complex metal layer;
(b11) to removing the solidification of the substrate after the remaining BCB dielectric layer that develops;
(b12) (b2) to (b11) step is repeated, the film through-hole interconnection of completing substrate.
Preferably, described substrate is ltcc substrate.
After adopting technique scheme, the present invention has following beneficial effect compared to existing technology:
BCB (phenylpropyl alcohol cyclobutane) is adopted to form deielectric-coating, and utilize ultrasonic development removal development residual, by wet etching by after the Cu layer in film through hole, just the metal column in film through hole must can be exposed comparatively completely, compare the employing polyimide media layer in background technology and plating Cu through hole post, without the need to through hole post part attenuated polishing, technique is simple, and film through-hole interconnection reliability is high, achieve substrate through-hole and film to connect up interface, and the through hole reliable interconnect between multilayer wiring, the problem of the development difficulty of poor quality of through-hole interconnection on substrate can be solved, significantly improve wiring density, and, utilize the Cu layer that wet etching film through hole is corresponding, observe the complex metal layer of removal process in film through hole of Cu layer exposed out till, process control and the detection of high density through hole reliable interconnect can be realized fast, wiring reliable in quality, is applicable to the making of the thin film multilayer wiring on various substrate.
Accompanying drawing explanation
Fig. 1 be one embodiment of the invention substrate on the schematic flow sheet of film through-hole interconnection manufacture method;
The structural representation of the substrate that each step correspondence that Fig. 2 a ~ 2m is Fig. 1 method is formed;
Fig. 3 a is the plan structure schematic diagram after the film through hole ultrasonic development of substrate;
Fig. 3 b is the plan structure schematic diagram after the film through hole wet etching removal Cu layer of substrate;
Fig. 4 is the schematic diagram that on the substrate according to Fig. 1, film through-hole interconnection manufacture method forms structure;
Fig. 5 is the schematic flow sheet of film through-hole interconnection manufacture method on substrate of the present invention.
Label declaration: 100-substrate, 101-through hole post, 102-TiW film, 103-Cu film, 106-Cu layer, 104-photoresist (first time photoetching), 108-photoresist (second time photoetching), 105-Cu/Ni/Au complex metal layer, the stripping area (first time photoetching) of 107-photoresist, the stripping area (second time photoetching) of 111-photoresist, the removal district of 109-TiW/Cu film, the removal district of 110-Cu floor, 112-BCB dielectric layer, 113-development is residual, 114-film through hole, 115-removes the film through hole of Cu layer, BCB dielectric layer after 116-solidification, conduction band figure on 117-dielectric layer.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Fig. 1 shows film through-hole interconnection manufacture method on a kind of substrate of the present invention, comprises the following steps:
(a1) provide one with the substrate of multiple through hole post, carry out grinding and polishing, and clean burnishing surface, be dried process after cleaning to upper surface of base plate, cleaning dried substrate are heat-treated, and carry out second time clean after heat treatment to it;
(a2) on clean upper surface of base plate, sputtered with Ti W and Cu forms compound adhesion layer successively;
(a3) on the compound adhesion layer of substrate, carry out first time photoetching, form film conduction band litho pattern in substrate through-hole post position;
(a4) on the film conduction band litho pattern of substrate, electroplate Cu, Ni, Au successively form complex metal layer, and at complex metal layer electroplating surface one Cu layer;
(a5) photoresist is removed;
(a6) on the Cu layer of substrate, second time photoetching is carried out in corresponding through hole post position, forms the film through hole litho pattern of covered substrate through hole post position;
(a7) adopt wet corrosion technique, the Cu layer of exposed surface on substrate and compound adhesion layer are removed;
(a8) photoresist is removed;
(a9) the upper surface of base plate spin coating phenylpropyl alcohol cyclobutane after removing photoresist, development treatment, photoetching forms the deielectric-coating via hole image of BCB dielectric layer;
(a10) on the substrate forming deielectric-coating via hole image, carry out ultrasonic development, the development of removing corresponding through hole post place on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual;
(a11) carrying out wet etching to removing the substrate after remaining that develops, removing the Cu layer that corresponding film through hole is exposed, monitoring substrate is until expose complex metal layer in whole film through hole;
(a12) to the substrate solidification BCB dielectric layer removed after Cu layer;
(a13) (a2) to (a12) step is repeated, the film through-hole interconnection of completing substrate.
Concrete, below in conjunction with Fig. 1 and Fig. 2 a ~ 2n, each step is described in detail.
Referring to Fig. 1 and 2 a, in step (a1), comprise further:
There is provided one with the substrate 100 of through hole post 101, grinding and polishing is carried out to substrate 100 upper surface, makes its upper surface roughness lower than 0.1 μm, and the complete exposed surface on the substrate 100 of the end face of substrate 100 through hole post 101;
Then, clean substrate 100 burnishing surface, adopt acetone ultrasonic cleaning to be about 10min successively, alcohol ultrasonic cleaning is about 10min, and deionized water ultrasonic cleaning is about 5min, and the time of cleaning can adjust according to actual conditions;
Then, by substrate 100 dehydration of alcohol after cleaning, with nitrogen and/or inert gas, substrate 100 is dried up;
Then, by cleaning and dried substrate 100 put into 400 DEG C of vacuum drying ovens and under nitrogen and/or inert gas atmosphere, substrate 100 heat-treated, with the gas of absorption in the surperficial through hole post 101 of release substrate 100, and remove on substrate 100 can adsorbable moisture and residual impurity, improve pellicle film adhesive force;
Then, use plasma to clean about 5min to the substrate 100 after heat treatment, preferably, 200W argon plasma can be used to clean, but be not restricted to this.
Referring to Fig. 1 and 2 b, in step (a2), one deck TiW film 102 and Cu film 103 is sputtered as compound adhesion layer at substrate 100 upper surface crossed by plasma clean, the thickness of TiW film 102 is optional between 0.01 ~ 0.07 μm, and the thickness of Cu film 103 is optional between 0.2 ~ 0.5 μm.
Referring to Fig. 1 and 2 c, in step (a3), adopt spin coating photoresist 104, front baking, exposure, development, the photoetching processes such as post bake, first time photoetching is carried out to the substrate 100 after step (a2), film conduction band litho pattern is formed in substrate 100 through hole post 101 position, substrate 100 through hole post 101 position exposes compound adhesion layer, exposed area is greater than the area in through hole styletable face, the photoresist thickness that this technique is formed is thicker than the thickness electroplating conduction band afterwards, because base plate surface roughness is larger, preferred negative photoresist carries out first time photoetching.
Referring to Fig. 1 and Fig. 2 d, in step (a4), substrate 100 good for photoetching in step (a3) is arranged on electroplating clamp, Cu/Ni/Au complex metal layer 105 is electroplated successively in film conduction band litho pattern, and at Au film electroplating surface one deck Cu layer 106, wherein, the Cu film thickness scope of complex metal layer 105 is 3 ~ 5 μm, the thickness range of Ni film is 0.5 ~ 1 μm, the thickness range of Au film is 0.5 ~ 1 μm, Cu layer 106 thickness range on complex metal layer 105 surface is 0.5 ~ 1 μm, preferably, before plating substrate 100 is placed in water to soak, be placed in the dilute hydrochloric acid solution 5 ~ 10s of 2 ~ 5% volumetric concentration ratios, to remove the copper oxide layer that compound adhesion layer copper film 103 may exist.
Referring to Fig. 1 and 2 e, in step (a5), the stripper that the substrate 100 (drying regime) electroplated in step (a4) is placed in about 80 DEG C is removed photoresist, carry out removing photoresist and form the glue stripping area 107 of photoresist, remove photoresist time 5 ~ 15min, then be placed in wash liquid for negative resist, acetone, ethanol, water rinsing successively, with the gas of its reaction, substrate do not dried up with nitrogen or inert gas etc.
Referring to Fig. 1 and 2 f, in step (a6), on the Cu layer 106 of substrate 100, corresponding through hole post 101 position spin coating photoresist 108 carries out second time photoetching, formation can the film through hole litho pattern of covered substrate 100 through hole post 101 position, and the position that this figure covers is used for forming film through hole afterwards.
Referring to Fig. 1 and 2 g, in step (a7), use wet corrosion technique, Cu floor 106 not covered by photoresist on substrate 100 is formed the removal district 110 of Cu floor, and the compound adhesion layer TiW film 102 do not covered by complex metal layer 105 and Cu film 103 remove the removal district 109 forming TiW/Cu film, the volume ratio of the Cu corrosive liquid each component in wet corrosion technique is HCl:H
2o
2: H
2o=1:3:20, etching time is 2 ~ 10s, TiW corrosive liquid is H
2o
2, etching time is 5 ~ 15min.
Referring to Fig. 1 and 2 h, in step (a8), the stripper that the substrate 100 (drying regime) step (a7) handled well by (a5) is placed in about 80 DEG C removes photoresist, carry out removing photoresist and form the glue stripping area 111 of photoresist, remove photoresist time 5 ~ 15min, then be placed in wash liquid for negative resist, acetone, ethanol, water rinsing successively, with the gas of its reaction, substrate 100 do not dried up with nitrogen or inert gas etc.
Referring to Fig. 1 and 2 i, in step (a9), carry out the technique of spin coating tackifier, tackifier baking, spin coating phenylpropyl alcohol cyclobutane, front baking, contact exposure, development front baking, immersion development successively, photoetching forms the deielectric-coating via hole image of BCB dielectric layer 112, deielectric-coating via hole image has development residual 113, wherein, phenylpropyl alcohol cyclobutane thickness is 4 ~ 7 μm, immersion development temperature is 35 ~ 40 DEG C, and immersion developing time is 2 ~ 4min.
Referring to Fig. 1 and 2 j, step (a10) specifically comprises:
A101: carry out ultrasonic development on the substrate 100 forming deielectric-coating via hole image, wherein, supersonic frequency is 120kHz ~ 170kHz, and the ultrasonic development time is 1 ~ 5min;
A102: fixing under the substrate 100 after ultrasonic development is placed in normal temperature fixing solution, fixing time is 1 ~ 2min;
A103: by the substrate 100 rinsing 20s after fixing, removes the development residual 113 at corresponding through hole post 101 place on deielectric-coating via hole image, forms Nonvisualization on substrate 100 and remains the film through hole 114 of 113;
A104: substrate 100 cleans rear use nitrogen and/or inert gas dries up;
A105: substrate 100 is placed in 80 DEG C ~ 100 DEG C baking ovens and dries about 1min.
Referring to Fig. 1 and 2 k, in step (a11), adopt wet corrosion technique, the volume ratio of the Cu corrosive liquid each component in wet corrosion technique is HCl:H
2o
2: H
2o=1:3:20, wet etching removes the exposed Cu layer 106 of film through hole 114, the removal of the Cu layer 106 in viewing film through hole 114 is until expose the golden film of complex metal layer, form the film through hole 115 removing Cu layer 106, etching time is 2 ~ 10s, process control and the detection of high density through hole reliable interconnect can be realized fast, as best shown in figures 3 a and 3b, in the film through hole being distributed in BCB dielectric layer 112 on substrate 100, from the Cu layer 106 of Fig. 3 a, become the Cu/Ni/Au complex metal layer 105 of Fig. 3 b gradually, thin film multilayer wiring rate of finished products reaches 100%, wiring reliable in quality.
Referring to Fig. 1 and 2 l, in step (a12), the substrate 100 step (a11) handled well carries out stepped temperature-curable, after solidification, BCB dielectric layer 116 comprises softcure BCB dielectric layer and hard solidification BCB dielectric layer, wherein can proceed subsequent thin film wiring after BCB softcure, substrate 100 after removal Cu layer 106 is solidified and specifically comprises: the BCB on substrate 100 is carried out softcure, is slowly warmed up to about 210 DEG C and maintains 40min, naturally dropping to room temperature afterwards; BCB on substrate 100 after softcure is solidified firmly, is slowly warmed up to about 250 DEG C and maintains 60min, naturally dropping to room temperature afterwards, show after BCB solidifies firmly to complete film Wiring technique on the substrate 100.
Referring to Fig. 1 and 2 m, in step (a13), repeat (a2) to (a12) step, BCB dielectric layer 116 after hardening carries out conduction band diagram shape 117 and connects up, the high-density film through-hole interconnection of completing substrate 100.
Referring to Fig. 4, according to this structure that film through-hole interconnection manufacture method on the substrate of Fig. 1 is formed, film through-hole interconnection can be carried out at substrate through-hole place, overcome in background technology due to plating Cu lead to control make substrate through-hole surface roughness cannot realize greatly the shortcoming of Low ESR electrical interconnection because attenuated polishing is improper, and process control and the detection of high density through hole reliable interconnect can be realized fast, be applicable to the thin film multilayer wiring on all kinds of substrate, be particularly useful for ltcc substrate, thin film multilayer wiring rate of finished products can reach 100%, and technique implementation is simple.
Referring to Fig. 5, present invention also offers film through-hole interconnection manufacture method on a kind of substrate, wherein, preferably, described substrate is ltcc substrate, comprises the following steps:
(b1) provide one with the substrate of multiple through hole post, carry out grinding and polishing, and clean burnishing surface, be dried process after cleaning to upper surface of base plate, cleaning dried substrate are heat-treated, and carry out second time clean after heat treatment to it;
(b2) on clean upper surface of base plate, sputtered with Ti W and Cu forms compound adhesion layer successively;
(b3) on the compound adhesion layer of substrate, carry out first time photoetching, form film conduction band litho pattern in substrate through-hole post position;
(b4) on the film conduction band litho pattern of substrate, electroplate Cu, Ni, Au successively form complex metal layer;
(b5) photoresist is removed;
(b6) on the complex metal layer of substrate, second time photoetching is carried out in corresponding through hole post position, forms the film through hole litho pattern of covered substrate through hole post position;
(b7) adopt wet corrosion technique, the compound adhesion layer of exposed surface on substrate is removed;
(b8) photoresist is removed;
(b9) the upper surface of base plate spin coating phenylpropyl alcohol cyclobutane after removing photoresist, development treatment, photoetching forms the deielectric-coating via hole image of BCB dielectric layer;
(b10) on the substrate forming deielectric-coating via hole image, carry out ultrasonic development, the development of removing corresponding through hole post on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual, exposes complex metal layer;
(b11) to removing the solidification of the substrate after the remaining BCB dielectric layer that develops;
(b12) (b2) to (b11) step is repeated, the film through-hole interconnection of completing substrate.
The method of Fig. 5 adopts BCB to form deielectric-coating, and utilize ultrasonic development removal development residual, by wet etching by after the Cu layer in film through hole, just the metal column in film through hole must can be exposed comparatively completely, compare the employing polyimide media layer in background technology and plating Cu through hole post, without the need to through hole post part attenuated polishing, technique is simple, and film through-hole interconnection reliability is high, achieve substrate through-hole and film to connect up interface, and the through hole reliable interconnect between multilayer wiring, the problem of the development difficulty of poor quality of through-hole interconnection on substrate can be solved, significantly improve wiring density, all the other do not repeat them here with the detailed description of Fig. 1 method something in common.
Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (10)
1. a film through-hole interconnection manufacture method on substrate, is characterized in that, comprise the following steps:
(a1) provide one with the substrate of multiple through hole post, carry out grinding and polishing, and clean burnishing surface, be dried process after cleaning to upper surface of base plate, cleaning dried substrate are heat-treated, and carry out second time clean after heat treatment to it;
(a2) on clean upper surface of base plate, sputtered with Ti W and Cu forms compound adhesion layer successively;
(a3) on the compound adhesion layer of substrate, carry out first time photoetching, form film conduction band litho pattern in substrate through-hole post position;
(a4) on the film conduction band litho pattern of substrate, electroplate Cu, Ni, Au successively form complex metal layer, and at complex metal layer electroplating surface one Cu layer;
(a5) photoresist is removed;
(a6) on the Cu layer of substrate, second time photoetching is carried out in corresponding through hole post position, forms the film through hole litho pattern of covered substrate through hole post position;
(a7) adopt wet corrosion technique, the Cu layer of exposed surface on substrate and compound adhesion layer are removed;
(a8) photoresist is removed;
(a9) the upper surface of base plate spin coating phenylpropyl alcohol cyclobutane after removing photoresist, development treatment, photoetching forms the deielectric-coating via hole image of BCB dielectric layer;
(a10) on the substrate forming deielectric-coating via hole image, utilize ultrasonic development method, the development of removing corresponding through hole post place on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual;
(a11) carrying out wet etching to removing the substrate after remaining that develops, removing the Cu layer that corresponding film through hole is exposed, on-line monitoring substrate is until expose complex metal layer in whole film through hole;
(a12) to the substrate solidification BCB dielectric layer removed after Cu layer;
(a13) (a2) to (a12) step is repeated, the film through-hole interconnection of completing substrate.
2. film through-hole interconnection manufacture method on substrate as claimed in claim 1, it is characterized in that, step (a1) comprising:
A111: provide one with the substrate of through hole post, grinding and polishing is carried out to upper surface of base plate, makes its upper surface roughness lower than 0.1 μm;
A112: clean substrate polishing face, adopts acetone ultrasonic cleaning, alcohol ultrasonic cleaning, deionized water ultrasonic cleaning successively;
A113: by substrate dehydration of alcohol after cleaning, is dried up with nitrogen and/or inert gas;
A114: by cleaning and dried substrate put into 400 DEG C of vacuum drying ovens and under nitrogen and/or inert gas atmosphere, substrate heat-treated;
A115: use plasma to carry out second time cleaning to the substrate after heat treatment.
3. film through-hole interconnection manufacture method on substrate as claimed in claim 1, is characterized in that, the photoresist that described first time photoetching and/or second time photoetching use is negative photoresist.
4. film through-hole interconnection manufacture method on substrate as claimed in claim 1, it is characterized in that, in step (a4), the thickness range of complex metal layer Cu film is 3 ~ 5 μm, the thickness range of Ni film is 0.5 ~ 1 μm, the thickness range of Au film is 0.5 ~ 1 μm, and the Cu layer thickness scope on complex metal layer surface is 0.5 ~ 1 μm.
5. film through-hole interconnection manufacture method on substrate as claimed in claim 1, it is characterized in that, the wet corrosion technique of step a (7), and/or the wet corrosion technique of step a (11), the volume ratio of Cu corrosive liquid each component is HCl:H
2o
2: H
2o=1:3:20, etching time is 2 ~ 10s, TiW corrosive liquid is H
2o
2, etching time is 5 ~ 15min.
6. film through-hole interconnection manufacture method on substrate as claimed in claim 1, it is characterized in that, in step (a9), carry out the technique of spin coating tackifier, tackifier baking, spin coating phenylpropyl alcohol cyclobutane, front baking, contact exposure, development front baking, immersion development successively, photoetching forms the deielectric-coating via hole image of BCB dielectric layer, and wherein, phenylpropyl alcohol cyclobutane thickness is 4 ~ 7 μm, immersion development temperature is 35 ~ 40 DEG C, and immersion developing time is 2 ~ 4min.
7. film through-hole interconnection manufacture method on substrate as claimed in claim 1, it is characterized in that, step (a10) comprises further:
A101: carry out ultrasonic development on the substrate forming BCB deielectric-coating via hole image, wherein, supersonic frequency is 120kHz ~ 170kHz, and the ultrasonic development time is 1 ~ 5min;
A102: fixing under the substrate after ultrasonic development is placed in normal temperature fixing solution, fixing time is 1 ~ 2min;
A103: by the wafer rinse 20s after fixing, the development of removing corresponding through hole post place on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual;
A104: use nitrogen and/or inert gas to dry up after base-plate cleaning;
A105: substrate is placed in 80 DEG C ~ 100 DEG C baking ovens and dries about 1min.
8. film through-hole interconnection manufacture method on substrate as claimed in claim 1, is characterized in that, in step (a12), comprise the substrate solidification after removing Cu layer:
Substrate BCB is carried out softcure, is slowly warmed up to about 210 DEG C and maintains 40min, naturally dropping to room temperature afterwards;
By the BCB of substrate is solidified firmly after softcure, be slowly warmed up to about 250 DEG C and maintain 60min, naturally dropping to room temperature afterwards.
9. a film through-hole interconnection manufacture method on substrate, is characterized in that, comprise the following steps:
(b1) provide one with the substrate of multiple through hole post, carry out grinding and polishing, and clean burnishing surface, be dried process after cleaning to upper surface of base plate, cleaning dried substrate are heat-treated, and carry out second time clean after heat treatment to it;
(b2) on clean upper surface of base plate, sputtered with Ti W and Cu forms compound adhesion layer successively;
(b3) on the compound adhesion layer of substrate, carry out first time photoetching, form film conduction band litho pattern in substrate through-hole post position;
(b4) on the film conduction band litho pattern of substrate, electroplate Cu, Ni, Au successively form complex metal layer;
(b5) photoresist is removed;
(b6) on the complex metal layer of substrate, second time photoetching is carried out in corresponding through hole post position, forms the film through hole litho pattern of covered substrate through hole post position;
(b7) adopt wet corrosion technique, the compound adhesion layer of exposed surface on substrate is removed;
(b8) photoresist is removed;
(b9) the upper surface of base plate spin coating phenylpropyl alcohol cyclobutane after removing photoresist, development treatment, photoetching forms the deielectric-coating via hole image of BCB dielectric layer;
(b10) on the substrate forming deielectric-coating via hole image, utilize ultrasonic development method, the development of removing corresponding through hole post on deielectric-coating via hole image remains, and forms the film through hole that on substrate, Nonvisualization is residual, exposes complex metal layer;
(b11) to removing the solidification of the substrate after the remaining BCB dielectric layer that develops;
(b12) (b2) to (b11) step is repeated, the film through-hole interconnection of completing substrate.
10. as film through-hole interconnection manufacture method on the substrate in claim 1-9 as described in any one, it is characterized in that, described substrate is ltcc substrate.
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