CN111163582A - Vertical interconnection substrate based on laser nano-machining technology and manufacturing method thereof - Google Patents
Vertical interconnection substrate based on laser nano-machining technology and manufacturing method thereof Download PDFInfo
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- CN111163582A CN111163582A CN202010002827.1A CN202010002827A CN111163582A CN 111163582 A CN111163582 A CN 111163582A CN 202010002827 A CN202010002827 A CN 202010002827A CN 111163582 A CN111163582 A CN 111163582A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
- H05K1/116—Lands, clearance holes or other lay-out details concerning the surrounding of a via
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
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Abstract
The invention discloses a method for manufacturing a vertical interconnection substrate based on a laser nano-processing technology, which comprises the steps of forming a first circuit wiring layer on one side of a substrate by dielectric layer photoetching, corrosion and photoresist removal, forming blind holes at corresponding positions on the substrate by adopting the laser nano-processing technology, placing the substrate in an electrodeposition liquid for electrodeposition, filling the blind holes, and forming a second circuit wiring layer on the other side of the substrate by dielectric layer photoetching, corrosion and photoresist removal. Thereby improving system integration performance.
Description
Technical Field
The invention belongs to the technical field of electronic packaging, and particularly relates to a vertical interconnection substrate based on a laser nano-machining technology and a manufacturing method thereof.
Background
With the development of electronic products toward lightness, thinness, wearability and multi-functionalization, higher requirements are put forward on miniaturization, flexibility and high density of packaging substrates. At present, the flexible substrate materials for microwave/millimeter wave mainly include: polyimide (PI), Polyethylene (PE), thermoplastic polymers (PEN, PET), and Liquid Crystal Polymers (LCP), and the like. Compared with other flexible materials, LCP has high molecular structure symmetry and weak dipole polarization, and is a high-performance flexible substrate material.
The LCP material can keep low dielectric constant and tangent loss (31.5 GHz-104.6 GHz microwave millimeter wave frequency band, and the measured epsilon r is 3.15 +/-0.05, tan theta)<0.005); LCP is highly crystallized in a solid state, so that the thermal stability is good, and the temperature coefficient of the dielectric constant of the LCP is obviously superior to that of PTFE and alumina ceramic materials, so that the microwave performance of the LCP is more stable when the temperature changes; the linear expansion coefficient of LCP in the flow direction is generally 10-5/. degree.C, ratio is generallyThe engineering plastics are smaller by one order of magnitude, so the processing size precision is high; the LCP molecules also have a "self-reinforcing" effect, with a strength of up to 200MPa, so that LCP substrates are generally thin, typically 25 μm/50 μm/100 μm thick. The traditional pure PTFE material has low strength, and reinforcing materials such as glass fiber and the like are required to be filled in the pure PTFE material to be possibly used as a substrate.
LCP as a novel microwave/millimeter wave substrate material, not only can satisfy the requirements of high-performance microwave/millimeter wave systems, but also can be used in bending and even folding environments based on the microwave device of LCP, so that the LCP substrate has wide attention in system integration application research, but the existing LCP substrate for electronic packaging also has the defects of longer signal delay, larger parasitic inductance and capacitance and low system integration level.
Disclosure of Invention
The invention aims to provide a vertical interconnection substrate based on a laser nano-processing technology and a manufacturing method thereof, wherein a metalized through hole is adopted to realize vertical interconnection between LCP double-sided circuit wiring layers, so that the interconnection distance can be effectively shortened, the signal delay is reduced, the parasitic inductance and capacitance are reduced, the high-frequency characteristic is improved, and the system integration performance is improved.
In order to solve the problems, the technical scheme of the invention is as follows:
a method for manufacturing a vertical interconnection substrate based on a laser nano-machining technology comprises the following steps:
s1: providing a substrate, wherein the substrate comprises an LCP (liquid Crystal Polymer) base material, and a first metal layer and a second metal layer which cover two sides of the LCP base material;
s2: photoetching, corroding and removing the photoresist on the first metal layer through a dielectric layer to form a first circuit wiring layer;
s3: according to the preset position of the through hole in the first circuit wiring layer, a blind hole is formed in the corresponding position on the substrate by adopting a laser nano-machining technology, the bottom of the blind hole is connected with the second metal layer, the residual scraps and the oxide layer in the blind hole are removed, and the hole wall of the blind hole is subjected to activation treatment;
s4: after an electro-deposition contact is reserved on the second metal layer, protecting the rest area of the second metal layer by arranging a dielectric layer;
s5: placing the substrate in an electrodeposition solution for electrodeposition until the blind holes are filled with the electrodeposition solution, and forming solid metal through columns in the blind holes;
s6: protecting the first circuit wiring layer by arranging a dielectric layer;
s7: performing photoetching, corrosion and photoresist removal on the second metal layer through a dielectric layer to form a second circuit wiring layer, wherein the first circuit wiring layer and the second circuit wiring layer are vertically interconnected through the solid metal through column;
s8: removing the protective dielectric on the first circuit wiring layer.
Preferably, the step S3 of opening blind holes at corresponding positions on the substrate by using the laser nano-machining technology further includes the steps of:
s311: removing the metal on the first circuit wiring layer at the position corresponding to the blind hole through dielectric layer photoetching, corrosion and photoresist removal;
s312: and ablating and removing the LCP substrate at the position corresponding to the blind hole by adopting laser, and reserving the metal on the second metal layer at the position corresponding to the blind hole.
Preferably, in step S3, blind holes are opened at corresponding positions on the substrate by using a laser nano-machining technique, and the size of the blind holes matches with the width and the distance of the conduction band.
Preferably, the substrate is provided with a hollowed-out alignment mark for ensuring the interconnection precision of the through hole between the first circuit wiring layer and the second circuit wiring layer.
Based on the same inventive concept, the invention also provides a vertical interconnection substrate based on the laser nano-machining technology, which is manufactured by the manufacturing method of the vertical interconnection substrate based on the laser nano-machining technology, the substrate comprises at least one solid metal through pillar, a first circuit wiring layer, an LCP (liquid Crystal Polymer) base material and a second circuit wiring layer, the first circuit wiring layer and the second circuit wiring layer are respectively covered on two sides of the LCP base material, and the solid metal through pillar is used for vertically interconnecting metal conductors of the first circuit wiring layer and the second circuit wiring layer in the substrate.
Based on the same inventive concept, the invention also provides a method for manufacturing the vertical interconnection substrate based on the laser nano-machining technology, which comprises the following steps:
s1: providing a substrate, wherein the substrate comprises an LCP (liquid Crystal Polymer) base material, and a first metal layer and a second metal layer which cover two sides of the LCP base material;
s2: according to the preset position of the through hole in the first metal layer, a blind hole is formed in the corresponding position on the substrate by adopting a laser nano-machining technology, the bottom of the blind hole is connected with the second metal layer, the residual scraps and the oxide layer in the blind hole are removed, and the hole wall of the blind hole is subjected to activation treatment;
s3: after an electro-deposition contact is reserved on the second metal layer, protecting the rest area of the second metal layer by arranging a dielectric layer;
s4: placing the substrate in an electrodeposition solution for electrodeposition until the blind holes are filled with the electrodeposition solution, and forming solid metal through columns in the blind holes;
s5: and photoetching, corroding and removing photoresist from the first metal layer and the second metal layer through dielectric layers, forming a first circuit wiring layer on the first metal layer, forming a second circuit wiring layer on the second metal layer, and vertically interconnecting the first circuit wiring layer and the second circuit wiring layer through the solid metal through column.
Preferably, the step S2 of opening blind holes at corresponding positions on the substrate by using the laser nano-machining technology further includes the steps of:
s211: removing the metal on the first metal layer at the position corresponding to the blind hole through medium layer photoetching, corrosion and photoresist removal;
s212: and ablating and removing the LCP substrate at the position corresponding to the blind hole by adopting laser, and reserving the metal on the second metal layer at the position corresponding to the blind hole.
Preferably, in step S2, blind holes are opened at corresponding positions on the substrate by using a laser nano-machining technique, and the size of the blind holes matches with the width and the distance of the conduction band.
Preferably, the substrate is provided with a hollowed-out alignment mark for ensuring the interconnection precision of the through hole between the first circuit wiring layer and the second circuit wiring layer.
Based on the same inventive concept, the invention also provides a vertical interconnection substrate based on the laser nano-machining technology, which is manufactured by the manufacturing method of the vertical interconnection substrate based on the laser nano-machining technology, the substrate comprises at least one solid metal through pillar, a first circuit wiring layer, an LCP (liquid Crystal Polymer) base material and a second circuit wiring layer, the first circuit wiring layer and the second circuit wiring layer are respectively covered on two sides of the LCP base material, and the solid metal through pillar is a metal conductor which is used for vertically interconnecting the first circuit wiring layer and the second circuit wiring layer in the substrate.
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages and positive effects:
1) the invention provides a method for manufacturing a vertical interconnection substrate based on a laser nano-processing technology, which comprises the steps of forming a first circuit wiring layer on one side of a substrate by dielectric layer photoetching, corrosion and photoresist removal, forming blind holes at corresponding positions on the substrate by adopting the laser nano-processing technology, placing the substrate in an electrodeposition liquid for electrodeposition, filling the blind holes, and forming a second circuit wiring layer on the other side of the substrate by dielectric layer photoetching, corrosion and photoresist removal. The high frequency characteristic is improved, thereby improving the system integration performance.
2) The invention also provides a vertical interconnection substrate based on the laser nano-processing technology, which comprises at least one solid metal through column, a first circuit wiring layer, an LCP substrate and a second circuit wiring layer, wherein the first circuit wiring layer and the second circuit wiring layer are respectively covered on two sides of the LCP substrate, the solid metal through column is a metal conductor used for vertically interconnecting the first circuit wiring layer and the second circuit wiring layer in the substrate, and a metalized through hole is adopted to realize vertical interconnection between the LCP double-sided circuit wiring layers, so that the interconnection distance can be effectively shortened, the signal delay is reduced, the parasitic inductance and capacitance are reduced, the high-frequency characteristic is improved, and the system integration performance is improved.
Drawings
FIG. 1 is a flow chart of a method of fabricating a vertical interconnect substrate based on laser nano-machining technology in accordance with an embodiment of the present invention;
FIGS. 2a to 2d are schematic diagrams illustrating a method for fabricating a vertical interconnect substrate based on laser nano-machining technology according to an embodiment of the present invention;
FIG. 3 is a detailed flowchart of the laser nano-machining process of FIG. 1 for forming blind holes at corresponding locations on the substrate;
FIG. 4 is a detailed flowchart of the blind via cleaning process of FIG. 1;
fig. 5 is a flow chart of a method of fabricating a vertical interconnect substrate based on laser nano-machining technology in accordance with an embodiment of the present invention.
Description of reference numerals:
101: a first metal layer; 102: an LCP substrate; 103: a second metal layer; 104: blind holes; 105: a first circuit wiring layer; 106: a solid metal through post; 107: a second circuit wiring layer.
Detailed Description
The present invention provides a vertical interconnect substrate based on laser nano-machining technology and a method for fabricating the same, which will be described in further detail with reference to the accompanying drawings and embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims.
Example one
Referring to fig. 1 and fig. 2a to 2d, fig. 1 is a flowchart illustrating a method for manufacturing a vertical interconnect substrate based on a laser nano-machining technology according to an embodiment of the present invention, and the present invention provides a method for manufacturing a vertical interconnect substrate based on a laser nano-machining technology, including the following steps:
s1, providing a substrate, as shown in fig. 2a, the substrate includes an LCP substrate 102, and a first metal layer 101 and a second metal layer 103 covering both sides of the LCP substrate 102, in this embodiment, both the first metal layer 101 and the second metal layer 103 are copper layers;
s2, referring to FIG. 2b, forming a first circuit wiring layer 105 by the first metal layer 101 through positive photoresist lithography, hardening, etching excess copper, and removing photoresist;
s3: referring to fig. 2b, according to the preset position of the through hole in the first circuit wiring layer 105, a blind hole 104 is opened at the corresponding position on the substrate by using a laser nano-machining technology, in this embodiment, according to the magnitude of the laser power, the copper layer on the first circuit wiring layer 105 and the liquid crystal polymer below the copper layer can be directly removed by ablation by using laser; as shown in fig. 3, fig. 3 is a detailed flowchart of opening blind holes at corresponding positions on the substrate by using the laser nano-machining technology in fig. 1, or the copper layer on the first circuit wiring layer 105 may be removed by photolithography and etching of the dielectric layer, and then the LCP substrate 102 at the corresponding position of the blind hole 104 is removed by ablation by using laser, and the metal on the second metal layer 103 at the corresponding position of the blind hole 104 is retained. In this embodiment, as shown in fig. 4, fig. 4 is a specific flowchart of fig. 1 for performing cleaning processing on the blind via, and the specific steps of the cleaning processing on the blind via 104 are as follows: the substrate is placed in pure water for repeated ultrasonic cleaning for three times, and slag and scraps in the blind hole are removed; then placing the substrate in a hydrochloric acid solution with the mass fraction of 20% for ultrasonic cleaning for 1-5 min, then placing the substrate in pure water for ultrasonic cleaning for 1-5 min, and performing oil removal treatment, wherein the step is repeated for three times; removing the oxide layer in the blind hole, and drying by using nitrogen; finally, the substrate is placed into a plasma cleaning machine, activation pretreatment is carried out on the substrate by adopting oxygen and argon plasmas, the activation pretreatment time is 15-25 min, the plasma power is 300-500W, and after the activation treatment, the wettability of the hole wall of the blind hole 104 to plating solution can be improved;
s4: after an electro-deposition contact is reserved on the second metal layer 103, large-area protection is carried out on the residual area of the second metal layer 103 by arranging a photoresist medium;
s5: referring to fig. 2c, the substrate is placed in the electrodeposition liquid for electrodeposition, the second metal layer 103 of the substrate is a cathode, the phosphor-copper plate is an anode, the electrodeposition liquid is a copper sulfate system, until the blind holes 104 are filled, solid metal through pillars are formed in the blind holes 104, and in the embodiment, the filling time of the blind holes 104 is 8-10 hours;
s6: after the blind holes 104 are filled, the LCP substrate is cleaned by pure water, dried by nitrogen, and protected in a large area by arranging a photoresist medium on the first circuit wiring layer 105;
s7: referring to fig. 2d, the second metal layer 103 is subjected to positive photoresist lithography, film hardening, excess copper etching and photoresist stripping to form a second circuit wiring layer 107, the first circuit wiring layer 105 and the second circuit wiring layer 107 are vertically interconnected through a solid metal through pillar 106, in this embodiment, a hollowed-out alignment mark is provided on the substrate, and the alignment mark may be in a cross shape, a rectangle or a circle, which is not limited herein, and is used for ensuring the via interconnection accuracy between the first circuit wiring layer 105 and the second circuit wiring layer 107;
s8: the photoresist medium on the first circuit wiring layer 105 is removed, and the fabrication of the vertical interconnection LCP substrate based on the laser nano-machining technology is completed.
Preferably, in step S3, blind holes 104 are formed at corresponding positions on the substrate by using a laser nano-machining technique, and the size of the blind holes 104 matches with the width and the distance of the conduction band, so as to ensure that the conduction band and the through holes are reliably electrically connected.
Preferably, the laser nanomachining technique uses an ultraviolet laser with a wavelength of 355 nm.
Preferably, the laser nano-machining technique specifically includes: during laser nano machining, laser spots are controlled to form a punctiform rotating track through a vibrating mirror, preset blind holes are used as machining points according to the radius of the rotating track, and the substrate is ablated by adjusting the power and time of the laser spots to form the blind holes 104.
The invention provides a method for manufacturing a vertical interconnection substrate based on a laser nano-processing technology, which comprises the steps of forming a first circuit wiring layer 105 on one side of a substrate through dielectric layer photoetching, corrosion and photoresist removal, forming a blind hole 104 at a corresponding position on the substrate through the laser nano-processing technology, placing the substrate in an electrodeposition liquid for electrodeposition, filling the blind hole 104, and forming a second circuit wiring layer 107 on the other side of the substrate through dielectric layer photoetching, corrosion and photoresist removal. The high frequency characteristic is improved, thereby improving the system integration performance.
Example two
Based on the same inventive concept, as shown in fig. 2d, the present invention further provides a vertical interconnect substrate based on laser nano-machining technology, which is manufactured by the method for manufacturing a vertical interconnect substrate based on laser nano-machining technology according to the first embodiment, and includes at least one solid metal via 106, a first circuit wiring layer 105, an LCP substrate 102, and a second circuit wiring layer 107, wherein the first circuit wiring layer 105 and the second circuit wiring layer 107 respectively cover both sides of the LCP substrate 102, and the solid metal via 106 is a metal conductor in the substrate for vertically interconnecting the first circuit wiring layer 105 and the second circuit wiring layer 107. Preferably, the first circuit wiring layer 105, the second circuit wiring layer 107 and the solid metal through pillars 106 are all made of copper, and the vertical interconnection among the LCP double-sided circuit wiring layers is realized by using the metalized through holes, so that the interconnection distance can be effectively shortened, the signal delay is reduced, the parasitic inductance and capacitance are reduced, the high-frequency characteristic is improved, and the system integration performance is improved.
Preferably, the LCP substrate 102 has a thickness of 0.0025mm to 0.2mm, the first circuit wiring layer 105 has a thickness of 5 to 15 μm, and the second circuit wiring layer 107 has a thickness of 5 to 15 μm.
Preferably, the substrate is provided with a hollowed-out alignment mark, which may be in a cross shape, a rectangle or a circle, without limitation, for ensuring the via interconnection accuracy between the first circuit wiring layer 105 and the second circuit wiring layer 107.
EXAMPLE III
Based on the same inventive concept, as shown in fig. 5, fig. 5 is a flowchart of a method for manufacturing a vertical interconnect substrate based on a laser nano-machining technology according to an embodiment of the present invention, and the present invention further provides a method for manufacturing a vertical interconnect substrate based on a laser nano-machining technology, including the following steps:
s1, providing a substrate, wherein the substrate comprises LCP base material and a first metal layer and a second metal layer which cover two sides of the LCP base material;
s2: according to the preset position of the through hole in the first metal layer, a blind hole is formed in the corresponding position on the substrate by adopting a laser nano-machining technology, the bottom of the blind hole is connected with the second metal layer, and the blind hole is cleaned;
s3: after an electro-deposition contact is reserved on the second metal layer, protecting the residual area of the second metal layer through a dielectric layer;
s4: placing the substrate in the electrodeposition liquid for electrodeposition until the blind holes are filled with the electrodeposition liquid, and forming solid metal through columns in the blind holes;
and S5, performing photoetching, corrosion and photoresist removal on the first metal layer and the second metal layer through dielectric layers, forming a first circuit wiring layer on the first metal layer, forming a second circuit wiring layer on the second metal layer, and vertically interconnecting the first circuit wiring layer and the second circuit wiring layer through the solid metal through pillar.
In this embodiment, the blind holes are first processed by a laser nano-machining technique, then the blind holes are filled by electrodeposition, and finally the first metal layer and the second metal layer on both sides of the LCP substrate are etched by positive photoresist lithography, hardening, etching of excess copper, and photoresist removal, so as to obtain the first circuit wiring layer and the second circuit wiring layer. The remaining technical features of the method for manufacturing a vertical interconnect substrate provided in this embodiment are the same as those of the method for manufacturing a vertical interconnect substrate provided in the first embodiment, and thus, in this embodiment, there is no need for redundancy. The method for manufacturing the vertical interconnection substrate based on the laser nano-machining technology provided by the embodiment has the advantages of simpler manufacturing process, improved production efficiency and reduced cost.
Example four
Based on the same inventive concept, as shown in fig. 2d, the present invention further provides a vertical interconnect substrate based on laser nano-machining technology, which is manufactured by the method for manufacturing a vertical interconnect substrate based on laser nano-machining technology according to the first embodiment, and includes at least one solid metal via 106, a first circuit wiring layer 105, an LCP substrate 102, and a second circuit wiring layer 107, wherein the first circuit wiring layer 105 and the second circuit wiring layer 107 respectively cover both sides of the LCP substrate 102, and the solid metal via 106 is a metal conductor in the substrate for vertically interconnecting the first circuit wiring layer 105 and the second circuit wiring layer 107. Preferably, the first circuit wiring layer 105, the second circuit wiring layer 107 and the solid metal through pillars 106 are all made of copper, and the vertical interconnection among the LCP double-sided circuit wiring layers is realized by using the metalized through holes, so that the interconnection distance can be effectively shortened, the signal delay is reduced, the parasitic inductance and capacitance are reduced, the high-frequency characteristic is improved, and the system integration performance is improved.
Preferably, the LCP substrate 102 has a thickness of 0.0025mm to 0.2mm, the first circuit wiring layer 105 has a thickness of 5 to 15 μm, and the second circuit wiring layer 107 has a thickness of 5 to 15 μm.
Preferably, the substrate is provided with a hollowed-out alignment mark, which may be in a cross shape, a rectangle or a circle, without limitation, for ensuring the via interconnection accuracy between the first circuit wiring layer 105 and the second circuit wiring layer 107.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments. Even if various changes are made to the present invention, it is still within the scope of the present invention if they fall within the scope of the claims of the present invention and their equivalents.
Claims (10)
1. A method for manufacturing a vertical interconnection substrate based on a laser nano-machining technology is characterized by comprising the following steps:
s1: providing a substrate, wherein the substrate comprises an LCP (liquid Crystal Polymer) base material, and a first metal layer and a second metal layer which cover two sides of the LCP base material;
s2: photoetching, corroding and removing the photoresist on the first metal layer through a dielectric layer to form a first circuit wiring layer;
s3: according to the preset position of the through hole in the first circuit wiring layer, a blind hole is formed in the corresponding position on the substrate by adopting a laser nano-machining technology, the bottom of the blind hole is connected with the second metal layer, the residual scraps and the oxide layer in the blind hole are removed, and the hole wall of the blind hole is subjected to activation treatment;
s4: after an electro-deposition contact is reserved on the second metal layer, protecting the rest area of the second metal layer by arranging a dielectric layer;
s5: placing the substrate in an electrodeposition solution for electrodeposition until the blind holes are filled with the electrodeposition solution, and forming solid metal through columns in the blind holes;
s6: protecting the first circuit wiring layer by arranging a dielectric layer;
s7: performing photoetching, corrosion and photoresist removal on the second metal layer through a dielectric layer to form a second circuit wiring layer, wherein the first circuit wiring layer and the second circuit wiring layer are vertically interconnected through the solid metal through column;
s8: removing the protective dielectric on the first circuit wiring layer.
2. The method for manufacturing a vertical interconnect substrate based on laser nano-machining technology as claimed in claim 1, wherein the step of opening blind holes at corresponding positions on the substrate by using laser nano-machining technology in step S3 further comprises the steps of:
s311: removing the metal on the first circuit wiring layer at the position corresponding to the blind hole through dielectric layer photoetching, corrosion and photoresist removal;
s312: and ablating and removing the LCP substrate at the position corresponding to the blind hole by adopting laser, and reserving the metal on the second metal layer at the position corresponding to the blind hole.
3. The method for manufacturing a vertical interconnect substrate based on laser nano-machining technology as claimed in claim 1 or 2, wherein the laser nano-machining technology is adopted to open blind holes at corresponding positions on the substrate in the step S3, and the size of the blind holes is matched with the width and the spacing of the conduction band.
4. The method as claimed in claim 1, wherein the substrate is provided with a hollow alignment mark for ensuring the via interconnection accuracy between the first circuit wiring layer and the second circuit wiring layer.
5. A laser nanofabrication based vertical interconnect substrate made by the laser nanofabrication based vertical interconnect substrate fabrication method of any of claims 1 to 4, comprising at least one solid metal via, a first circuit wiring layer, an LCP substrate and a second circuit wiring layer, said first and second circuit wiring layers respectively overlying both sides of said LCP substrate, said solid metal via vertically interconnecting within said substrate the metal conductors of said first and second circuit wiring layers.
6. A method for manufacturing a vertical interconnection substrate based on a laser nano-machining technology is characterized by comprising the following steps:
s1: providing a substrate, wherein the substrate comprises an LCP (liquid Crystal Polymer) base material, and a first metal layer and a second metal layer which cover two sides of the LCP base material;
s2: according to the preset position of the through hole in the first metal layer, a blind hole is formed in the corresponding position on the substrate by adopting a laser nano-machining technology, the bottom of the blind hole is connected with the second metal layer, the residual scraps and the oxide layer in the blind hole are removed, and the hole wall of the blind hole is subjected to activation treatment;
s3: after an electro-deposition contact is reserved on the second metal layer, protecting the rest area of the second metal layer by arranging a dielectric layer;
s4: placing the substrate in an electrodeposition solution for electrodeposition until the blind holes are filled with the electrodeposition solution, and forming solid metal through columns in the blind holes;
s5: and photoetching, corroding and removing photoresist from the first metal layer and the second metal layer through dielectric layers, forming a first circuit wiring layer on the first metal layer, forming a second circuit wiring layer on the second metal layer, and vertically interconnecting the first circuit wiring layer and the second circuit wiring layer through the solid metal through column.
7. The method for manufacturing a vertical interconnect substrate based on laser nano-machining technology as claimed in claim 6, wherein the step of opening blind holes at corresponding positions on the substrate by using laser nano-machining technology in step S2 further comprises the steps of:
s211: removing the metal on the first metal layer at the position corresponding to the blind hole through medium layer photoetching, corrosion and photoresist removal;
s212: and ablating and removing the LCP substrate at the position corresponding to the blind hole by adopting laser, and reserving the metal on the second metal layer at the position corresponding to the blind hole.
8. The method for manufacturing a vertical interconnect substrate based on laser nano-machining technology as claimed in claim 6 or 7, wherein the laser nano-machining technology is adopted to open blind holes at corresponding positions on the substrate in the step S2, and the size of the blind holes is matched with the width and the spacing of the conduction band.
9. The method as claimed in claim 6, wherein the substrate is provided with a hollow alignment mark for ensuring the via interconnection accuracy between the first circuit wiring layer and the second circuit wiring layer.
10. A vertical interconnect substrate based on laser nano-machining technology, characterized in that the substrate is manufactured by the method for manufacturing a vertical interconnect substrate based on laser nano-machining technology as claimed in any one of claims 6 to 9, the substrate comprises at least one solid metal via, a first circuit wiring layer, an LCP substrate and a second circuit wiring layer, the first circuit wiring layer and the second circuit wiring layer respectively cover both sides of the LCP substrate, and the solid metal via is a metal conductor in the substrate for vertically interconnecting the first circuit wiring layer and the second circuit wiring layer.
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