CN105244288B - Method for encapsulating integrated circuit - Google Patents
Method for encapsulating integrated circuit Download PDFInfo
- Publication number
- CN105244288B CN105244288B CN201510542069.1A CN201510542069A CN105244288B CN 105244288 B CN105244288 B CN 105244288B CN 201510542069 A CN201510542069 A CN 201510542069A CN 105244288 B CN105244288 B CN 105244288B
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- Prior art keywords
- cover plate
- integrated circuit
- potential dividing
- dividing ring
- ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a kind of method for encapsulating integrated circuit, this method includes：Cover plate comprising solder ring is covered on the shell of integrated circuit to be packaged；Potential dividing ring is placed at the middle part of cover plate, potential dividing ring is designed to the ratio of the girth of its girth and cover plate between 0.6~1；Apply pressure at the middle part of potential dividing ring using pressure source, cover plate is compressed relative to shell；The integrated circuit of compression is positioned in sintering furnace and heated, solder ring is melted.The present invention is in encapsulation integrated circuit process, and size and distribution situation to pressure applied can be well controlled so that solder ring can trickle fully and uniform in fusion processes, and cavity is greatly reduced after solder solidification.
Description
Technical field
The present invention relates to integrated circuit electronic encapsulation field, the more particularly to method for encapsulating integrated circuit.
Background technology
The seal process of the current integrated circuit with gold-tin eutectic solder ring is typically using the method for sintering.In sintering process
In one pressure is applied to the solder between cover plate and shell by external force, it is ensured that trickle abundant in solder fusion process.Fig. 1 is
Stressed schematic diagram is applied to integrated circuit in the prior art.As shown in figure 1, being placed on point on the cover plate 21 of integrated circuit 20
The length of side very little of the length of side opposing cover plates 21 of pressure ring 30, the matching used fixture 10 of relatively small potential dividing ring 30 with this length of side
Also corresponding very little.The power that fixture 10 is applied in the prior art often excessively concentrates on the middle part of cover plate 21, pressure size and point
Cloth situation can not be precisely controlled；In addition, the pin of shell 22 is directly placed on the lower shoe of fixture 10, by fixture length
Limitation, part pin can be placed in the outside of fixture 10, and this can cause：If the pressure applied of fixture 10 is excessive, not only hold
Fragile pin, and unbalance stress can be caused, there is the excessive situation of solder；If the pressure is too small, solder occurs
The problem of voidage is high.Fig. 2 is the roentgenogram phasor of integrated circuit 20 in the prior art.As shown in Fig. 2 having multiple in the figure
Solder trickling in small solder cavity (cavity is located at the black portions at edge), this explanation finished product of integrated circuit 20 is uneven, empty
Hole rate is larger, and it does not meet the requirement to seal area voidage in GJB548B screening test flows.
The content of the invention
In order to solve integrated circuit in encapsulation process, size and distribution situation to pressure applied can not be controlled accurately
System, causes solder ring to be trickled in fusion processes insufficient, uneven, the problem of voidage is big after solder solidification.
The present invention proposes a kind of method for encapsulating integrated circuit, and this method includes：
Cover plate comprising solder ring is covered on the shell of integrated circuit to be packaged；
Potential dividing ring is placed at the middle part of the cover plate, the potential dividing ring is designed to the ratio of its girth and the girth of the cover plate
Value is between 0.6~1；
Apply pressure at the middle part of the potential dividing ring using pressure source, the cover plate is compressed relative to the shell；
The integrated circuit of compression is positioned in sintering furnace and heated, the solder ring is melted.
In some embodiments, the potential dividing ring is designed to that the ratio of the girth of its girth and the cover plate is 0.8.
In some embodiments, the shape of the potential dividing ring is rectangle corresponding with the shape of cover plate, corresponding potential dividing ring
The length of side and cover plate length of side ratio be 0.8.
Thus, present embodiment can be drawn by experiment：In the case of other process conditions identicals, with potential dividing ring
With the increase of the ratio of the girth (or length of side) of cover plate, control of the pressure source to the size and distribution situation of its pressure applied
Ability processed is constantly strengthening.When the ratio reaches 0.6, control of the pressure source to the size and distribution situation of its pressure applied
Ability processed tends to be steady.When the ratio is more than 1, i.e., the marginal portion of potential dividing ring beyond cover plate marginal portion, due to by
To the limitation of pressure Source size, pressure source becomes less steady to the size of its pressure applied and the control ability of distribution situation
It is fixed, and with the increase of partial pressure ring size, its material consumption also increases.In the present embodiment, potential dividing ring is designed to its girth
It is 0.8 with the ratio of the girth of the cover plate, now, not only Stress control effect reaches most preferably, and the material also phase of potential dividing ring
To relatively saving.Now solder ring can trickle more fully, evenly in fusion processes, and voidage can significantly subtract after solder solidification
It is few.
In some embodiments, the potential dividing ring is to include Al2O3Potsherd.
Thus, the potential dividing ring of present embodiment uses and includes Al2O3Potsherd, its hardness is high, and flatness is good, under high temperature
Without deformation, no gas is produced.Ensure that high temperature of the potential dividing ring when encapsulating integrated circuit, it is in stable condition in the environment of high pressure, and
It can be brought into close contact with lid surface, more conducively the accurate control of pressure size and distribution situation.
In some embodiments, the pressure source is arranged to meet in the pressure F of the middle part application of the potential dividing ring:F
=k × C, wherein k are 0.1~0.2N/mm, and C is the girth of the cover plate.
In some embodiments, the k is 0.15N/mm.
Thus, present embodiment can be drawn by many experiments：When k is 0.1~0.2N/mm, in potential dividing ring
The solder ring of melting can be pressed very solid by the pressure F that portion applies, and voidage can be greatly reduced after solder solidification, and not
The excessive situation for causing solder to overflow of pressure occurs.When k is 0.15N/mm, the control effect of pressure is optimal.
In some embodiments, the pressure source is that can be resistant to the spring chuck that temperature is up to 333 DEG C ± 5 DEG C.
Thus, the spring chuck selected by present embodiment is simple to operate, can be in high temperature (333 DEG C ± 5 DEG C)
In the case of effective fixed packaged tandem circuit, and can provide higher than pressure of the prior art.
In some embodiments, the spring chuck is included on train wheel bridge and lower plate, the bare terminal end of the lower plate
It is detachably provided with the rigid enclosure block of surfacing.
In some embodiments, the train wheel bridge and lower plate are pivotally connected by pivot, around pivot arrangement
There is a spiral connecting piece, one end of the spiral connecting piece is against train wheel bridge, and the other end is against lower plate.
Thus, the spring chuck that present embodiment is used includes train wheel bridge and lower plate, during spring chuck clamping potential dividing ring
Contacted in face, contact area is big so that the size and distribution situation of pressure applied can be well controlled.In addition,
The rigid enclosure block of surfacing is detachably provided with the bare terminal end of lower plate, the rigid enclosure block can be used as integrated circuit
Carrying platform, not only can be very good securing integrated circuit, prevent pin from damaging, and can also play a part of partial pressure.In addition, because
There is certain thickness for the rigid enclosure block, this can increase the subtended angle of fixture, so as to increase pressure applied.
The present invention can solve integrated circuit in encapsulation process by easy hardware, to the big of pressure applied
Small and the problem of can not accurately controlling of distribution situation so that solder can trickle fully and uniform in fusion processes, and solder is solid
Cavity is greatly reduced after change.
Brief description of the drawings
Fig. 1 is to apply stressed schematic diagram to integrated circuit in the prior art；
Fig. 2 is the roentgenogram phasor of integrated circuit in the prior art；
Fig. 3 is the schematic diagram of the pressure source of an embodiment of the present invention；
Fig. 4 (a) is the schematic diagram of the front view of rigid enclosure block in Fig. 3；
Fig. 4 (b) is the schematic diagram of the side view of rigid enclosure block in Fig. 3；
Fig. 5 applies stressed schematic diagram to integrated circuit for an embodiment of the present invention；
Fig. 6 is the method schematic diagram for being used to encapsulate integrated circuit of an embodiment of the present invention；
Fig. 7 is the roentgenogram phasor of an embodiment of the present invention.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with the accompanying drawings with specific embodiment pair
Invention is described in further detail.Although showing disclosure exemplary embodiment in accompanying drawing, it being understood, however, that can be with
Various forms realizes the present invention without that should be limited by embodiments set forth here.It is opposite there is provided these embodiments be in order to be able to
Enough more thorough explanation present invention, and can by the scope of the present invention completely convey to those skilled in the art.
Fig. 3 is the schematic diagram of the pressure source of an embodiment of the present invention.As shown in figure 3, the pressure source is spring chuck
100.The spring chuck 100 includes being removably disposed on train wheel bridge 101 and lower plate 102, the bare terminal end of the lower plate 102
There is the rigid enclosure block 103 of surfacing.The train wheel bridge 101 and lower plate 102 are pivotally connected by pivot 104, around the pivot
Axle 104 is disposed with spiral connecting piece 105, and one end of the spiral connecting piece 105 is against train wheel bridge 101, and the other end is against lower folder
Plate 102.
In the present embodiment, spring chuck 100 uses exotic material, and the material requirements chemical property is stable, heating
Volatilization gas is difficult in environment, can not be failed under high temperature (333 DEG C ± 5 DEG C).The spring chuck 100 can be spring clip, example
Such as iron spring, molybdenum sheet spring., can also as long as ensureing the similarly sized pressure that do not fail and can provide in above-mentioned environment
Using other types of metal spring.
In the present embodiment, contacted both when spring chuck 100 clamps potential dividing ring in face, contact area is big so that institute
The size and distribution situation of the pressure of application can be well controlled.
((b) is respectively the front view of rigid enclosure block in Fig. 3 and the schematic diagram of side view to Fig. 4 (a) with Fig. 4.As shown in figure 4,
Side is provided with an opening on the rigid enclosure block, this opening just hold in Fig. 3 the bare terminal end of the lower plate 102 of fixture 100 insert
Enter.
In the present embodiment, the rigid enclosure block of surfacing is detachably provided with the bare terminal end of lower plate, should
Rigid enclosure block can as integrated circuit carrying platform, not only can be very good securing integrated circuit, partial pressure can also be played
Effect.In addition, because the rigid enclosure block there is certain thickness, just cause integrated circuit pin be placed in rigid enclosure block it
Outside, do not contacted with rigid enclosure block and lower plate, can not only prevent pin from damaging, be also prevented from pressure uneven.In addition, this
The subtended angle of fixture can be increased, so as to increase pressure applied.
Fig. 5 applies stressed schematic diagram to integrated circuit for an embodiment of the present invention.As shown in figure 5, the bullet in Fig. 3
Rigid enclosure block 103 on the bare terminal end of the lower plate 102 of property fixture 100 is placed to be packaged on the platform as carrying platform
Integrated circuit 20 shell 22 (such as model PGA84 shell), the platform plays a part of partial pressure, in addition the shell 22
Pin be just placed in the outside of rigid enclosure block 103, it is to avoid directly contacted with rigid enclosure block 130 and lower plate 102, thus
Solve following problem of the prior art：The pin of shell 22 is directly placed on the lower shoe of spring chuck 100, by elasticity
The limitation of the length of fixture 100, part pin can be placed in the outside of spring chuck 100, if the pressure applied of spring chuck 100
It is excessive, pin is not only easily damaged, and unbalance stress can be caused, there is the excessive situation of solder；If the pressure is too small,
The problem of solder voidage is high occurs.
Cover plate 21 with gold-tin eutectic solder ring is covered on shell 22, then potential dividing ring is placed at the middle part of cover plate 21
30, the train wheel bridge 101 of spring chuck 100 is clamped in the middle part of potential dividing ring 30.When the integrated circuit 20 is encapsulated, each device is in level
Place.
As shown in Figure 5, the length of side for the potential dividing ring 30 being placed on the cover plate 21 of integrated circuit 20 accounts for the ratio of the length of side of cover plate
Example than much bigger in the prior art, to the matching used fixture 100 of the potential dividing ring 30 that this length of side is relatively large also it is corresponding compared with
Big and its clamping part is contacted with potential dividing ring 30 in face, and this can not only provide larger pressure, and pressure size and distribution situation
Can be precisely controlled.
Present embodiment can be drawn by many experiments：When k is 0.1~0.2N/mm, apply at the middle part of potential dividing ring
Pressure F can the solder ring of melting be pressed very solid, voidage is greatly reduced after solder solidification, and be not in pressure
The situation that the excessive solder of power overflows.When k is 0.15N/mm, control effect is optimal.
Fig. 6 is the method schematic diagram for being used to encapsulate integrated circuit of an embodiment of the present invention.As shown in fig. 6, for sealing
The method of dress integrated circuit comprises the following steps：
S601：Cover plate comprising solder ring is covered on the shell of integrated circuit to be packaged.
S602：Potential dividing ring is placed at the middle part of cover plate.
In the present embodiment, potential dividing ring can use high temperature resistant, and chemical property is stable, and Volatile Gas is difficult in heating environment
The material of body.
In the present embodiment, potential dividing ring is to include Al2O3Potsherd.
Thus, present embodiment uses and includes Al2O3Ceramic material potential dividing ring, its hardness is high, and flatness is good, high temperature
It is lower without deformation, no gas is produced.Ensure that high temperature of the potential dividing ring when encapsulating integrated circuit, it is in stable condition in the environment of high pressure,
And can be brought into close contact with lid surface.The more conducively accurate control of pressure size and distribution situation.
In some embodiments, the potential dividing ring is designed to that the interval of the ratio of the girth of its girth and the cover plate is
[0.6,1].
In some embodiments, the potential dividing ring is designed to that the ratio of the girth of its girth and the cover plate is 0.8.
Done nine groups of experiments below, come verify other techniques it is identical (for example pressure source is identical, and the heat time is identical, plus
Hot temperature is identical.) under conditions of, the cover plate of various sizes of potential dividing ring and identical size is to encapsulating the solder of integrated circuit finished product
The influence of voidage.
In the present embodiment, the shape of potential dividing ring is rectangle corresponding with the shape of cover plate, and the cover plate length of side is
23.876mm.To should be in the case of cover plate employs nine kinds of various sizes of potential dividing rings, other technique identicals：
First group of experiment：
The length of side of potential dividing ring is 9.550mm, and it accounts for the cover plate length of side 40%.Roentgenogram is carried out to the finished product of the integrated circuit
Phase, from empty more in its photographic view, the solder of integrated circuit finished product.
Second group of experiment：
The length of side of potential dividing ring is 11.938mm, and it accounts for the cover plate length of side 50%.Roentgenogram is carried out to the finished product of the integrated circuit
Phase, it is smaller compared with battery of tests from the voidage in its photographic view, the solder of integrated circuit finished product.
3rd group of experiment：
The length of side of potential dividing ring is 14.325mm, and it accounts for the cover plate length of side 60%.Roentgenogram is carried out to the finished product of the integrated circuit
Phase, from its photographic view, the cavity in the solder of integrated circuit finished product is substantially not visible.This explanation solder trickling is uniform, empty
Hole rate is smaller.
4th group of experiment：
The length of side of potential dividing ring is 16.713mm, and it accounts for the cover plate length of side 70%.Roentgenogram is carried out to the finished product of the integrated circuit
Phase, from its photographic view, the cavity in the solder of integrated circuit finished product is substantially not visible.This explanation solder trickling is uniform, empty
Hole rate is smaller.
5th group of experiment：
The length of side of potential dividing ring is 19.100mm, and it accounts for the cover plate length of side 80%.Roentgenogram is carried out to the finished product of the integrated circuit
Phase, from its photographic view, the cavity in the solder of integrated circuit finished product is substantially not visible.This explanation solder trickling is uniform, empty
Hole rate is smaller.
6th group of experiment：
The length of side of potential dividing ring is 21.488mm, and it accounts for the cover plate length of side 90%.Roentgenogram is carried out to the finished product of the integrated circuit
Phase, from its photographic view, the cavity in the solder of integrated circuit finished product is substantially not visible.This explanation solder trickling is uniform, empty
Hole rate is smaller.
7th group of experiment：
The length of side of potential dividing ring is 23.876mm, and it accounts for the cover plate length of side 100%.X-ray is carried out to the finished product of the integrated circuit
Photograph, from its photographic view, the cavity in the solder of integrated circuit finished product is substantially not visible.This explanation solder trickling is uniform,
Voidage is smaller.
8th group of experiment：
The length of side of potential dividing ring is 28.651mm, and it accounts for the cover plate length of side 120%.X-ray is carried out to the finished product of the integrated circuit
Photograph, from its photographic view, occurs in that some small cavities in the solder of integrated circuit finished product.
9th group of experiment：
The length of side of potential dividing ring is 35.814mm, and it accounts for the cover plate length of side 150%.X-ray is carried out to the finished product of the integrated circuit
Photograph, from its photographic view, occurs in that some small cavities in the solder of integrated circuit finished product.
Thus, present embodiment has been found through experimentation that：In the case of other process conditions identicals, with potential dividing ring
With the increase of the ratio of the length of side of cover plate, pressure source is to the size of its pressure applied and the control ability of distribution situation not
Disconnected enhancing.When the ratio reaches 0.6, pressure source tends to the size of its pressure applied and the control ability of distribution situation
Steadily.When the ratio is more than 1 (i.e. marginal portion of the marginal portion of potential dividing ring beyond cover plate), due to the source chi that is under pressure
Very little limitation, pressure source becomes less stable, integrated electricity to the size of its pressure applied and the control ability of distribution situation
Some small cavities are occurred in that in the solder of road finished product, and with the increase of partial pressure ring size, the consumption of its material also increases.
The ratio that its length of side and the length of side of the cover plate are designed in the potential dividing ring of present embodiment is 0.8, now, pressure
Control effect is not only best, and the material of potential dividing ring is relatively saved.Now solder ring can be trickled in fusion processes more fully,
Evenly, cavity is greatly reduced after solder solidification.
Furthermore it is possible to potential dividing ring design is circularized on demand, the shape such as triangle and ellipse.
S603：Apply pressure at the middle part of the potential dividing ring using pressure source, by the cover plate relative to the shell pressure
Tightly.
In the present embodiment, the pressure source is spring chuck described in Fig. 3.
In the present embodiment, the pressure source is arranged to meet in the pressure F of the middle part application of the potential dividing ring:F=k
× C, wherein k are 0.1~0.2N/mm, and C is the girth of the cover plate.
In some embodiments, the k is 0.15N/mm.
Thus, present embodiment can be drawn by many experiments：When k is 0.1~0.2N/mm, in potential dividing ring
The solder ring of melting can be pressed very solid by the pressure F that portion applies, and cavity is greatly reduced after solder solidification, and will not go out
The situation that the existing excessive solder of pressure overflows.When k is 0.15N/mm, control effect is optimal.
S604：The integrated circuit of compression is positioned in sintering furnace and heated, the solder ring is melted, integrated circuit is completed
Encapsulation.
Fig. 7 is the roentgenogram phasor of an embodiment of the present invention.As shown in fig. 7, being substantially not present in the figure shown in Fig. 1
Solder in cavity, illustrate that solder trickling is uniform, voidage is smaller, meets in GJB548B screening test flows to seal area
The requirement of voidage.
Above-described is only some embodiments of the present invention.For the person of ordinary skill of the art, not
On the premise of departing from the invention design, various modifications and improvements can be made, these belong to the protection model of the present invention
Enclose.
Claims (8)
1. the method for encapsulating integrated circuit, including：
Cover plate comprising solder ring is covered on the shell of integrated circuit to be packaged；
Potential dividing ring is placed at the middle part of the cover plate, the potential dividing ring is designed to that the ratio of its girth and the girth of the cover plate is situated between
Between 0.6~1；
Apply pressure at the middle part of the potential dividing ring using spring chuck, the cover plate is compressed relative to the shell, it is described
Spring chuck includes being detachably provided with the rigid enclosure of surfacing on train wheel bridge and lower plate, the bare terminal end of the lower plate
Block；
The integrated circuit of compression is positioned in sintering furnace and heated, the solder ring is melted.
2. according to the method described in claim 1, wherein, the potential dividing ring is designed to the ratio of the girth of its girth and the cover plate
Example is 0.8.
3. method according to claim 2, wherein, the shape of the potential dividing ring is rectangle corresponding with the shape of cover plate,
The length of side of corresponding potential dividing ring and the length of side ratio of cover plate are 0.8.
4. the method according to any one of claim 1-3, wherein, the potential dividing ring is to include Al2O3Potsherd.
5. according to the method described in claim 1, wherein, the spring chuck be arranged to the potential dividing ring middle part application
Pressure F is met:F=k × C, wherein k are 0.1~0.2N/mm, and C is the girth of the cover plate.
6. method according to claim 5, wherein, the k is 0.15N/mm.
7. method according to claim 5, wherein, the spring chuck can be resistant to 333 DEG C ± 5 DEG C.
8. method according to claim 7, wherein, the train wheel bridge and lower plate are pivotally connected by pivot, around institute
State pivot and be disposed with spiral connecting piece, one end of the spiral connecting piece is against train wheel bridge, and the other end is against lower plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542069.1A CN105244288B (en) | 2015-08-28 | 2015-08-28 | Method for encapsulating integrated circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542069.1A CN105244288B (en) | 2015-08-28 | 2015-08-28 | Method for encapsulating integrated circuit |
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| Publication Number | Publication Date |
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| CN105244288A CN105244288A (en) | 2016-01-13 |
| CN105244288B true CN105244288B (en) | 2017-11-07 |
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| CN201510542069.1A Active CN105244288B (en) | 2015-08-28 | 2015-08-28 | Method for encapsulating integrated circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203135209U (en) * | 2013-04-02 | 2013-08-14 | 中国电子科技集团公司第十三研究所 | Multi-chip stress-free semiconductor laser packaging clamp |
| CN104392954A (en) * | 2014-12-10 | 2015-03-04 | 中国电子科技集团公司第四十七研究所 | Tube shell packaging clamp and packaging method using same |
| CN204221277U (en) * | 2014-11-18 | 2015-03-25 | 江苏博普电子科技有限责任公司 | A kind of air-tightness sealing cap fixture based on hot plate heating |
| CN104518423A (en) * | 2014-12-31 | 2015-04-15 | 山东华光光电子有限公司 | Sintering device of high-power semiconductor laser and sintering method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153497A (en) * | 2008-12-24 | 2010-07-08 | Shinko Electric Ind Co Ltd | Molding method and molding apparatus |
-
2015
- 2015-08-28 CN CN201510542069.1A patent/CN105244288B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203135209U (en) * | 2013-04-02 | 2013-08-14 | 中国电子科技集团公司第十三研究所 | Multi-chip stress-free semiconductor laser packaging clamp |
| CN204221277U (en) * | 2014-11-18 | 2015-03-25 | 江苏博普电子科技有限责任公司 | A kind of air-tightness sealing cap fixture based on hot plate heating |
| CN104392954A (en) * | 2014-12-10 | 2015-03-04 | 中国电子科技集团公司第四十七研究所 | Tube shell packaging clamp and packaging method using same |
| CN104518423A (en) * | 2014-12-31 | 2015-04-15 | 山东华光光电子有限公司 | Sintering device of high-power semiconductor laser and sintering method thereof |
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| CN105244288A (en) | 2016-01-13 |
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