CN104518423A - Sintering device of high-power semiconductor laser and sintering method thereof - Google Patents
Sintering device of high-power semiconductor laser and sintering method thereof Download PDFInfo
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- CN104518423A CN104518423A CN201410845400.2A CN201410845400A CN104518423A CN 104518423 A CN104518423 A CN 104518423A CN 201410845400 A CN201410845400 A CN 201410845400A CN 104518423 A CN104518423 A CN 104518423A
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Abstract
The invention discloses a sintering device of a high-power semiconductor laser and a sintering method thereof. The device comprises a base, a positioning table, a press piece and a connecting rod, wherein the positioning table is fixed on the base; at least two positioning grooves used for placement of laser heat sinks are formed in the positioning table; the press piece is connected with the base through the connecting rod. The method for sintering the semiconductor laser is performed in a vacuum chamber or under nitrogen protection atmosphere through the device. The device is simple and reasonable in structure, convenient to use and low in cost; by adopting the device, a plurality of lasers can be sintered at a time, chips are positioned through the positioning grooves and are simultaneously fixed through the press piece, good contact between the chips and the heat sinks is guaranteed, and meanwhile position displacement of the chips caused during solder fusing can be prevented; the device can effectively the sintering quality and sintering efficiency of the laser chips.
Description
Technical field
The present invention relates to a kind of can the device of contraposition batch sinter semiconductor laser and sintering method thereof, belong to semiconductor laser sintering technology field.
Background technology
Because semiconductor laser has the advantages such as volume is little, lightweight, conversion efficiency is high, the life-span is long, wavelength cover is wide, be widely used in the fields such as industry, medical treatment, communication and military affairs, progressively instead of traditional gas and solid state laser.But because semiconductor laser volume is little, power is high, the heat radiation of chip is the key factor affecting semiconductor laser life-span and stability.Semiconductor laser chip needs to be dispelled the heat to it by heat sink, this just require to meet between heat sink and tube core be connected firmly, the condition such as thermal conductivity is good, antifatigue, low resistance.At present the most general method be by one single chip direct sintering on heat sink.
At present, the chip sintering of domestic high power semiconductor lasers is generally adopt manual absorption to put the mode of chip under the microscope.Manual operations generally refers to artificial tweezers or suction nozzle folder or draws chip of laser, aims under the microscope and chip is put into suitable position, then carry out heat-agglomerating by the equipment such as alloying furnace or heating platform with heat sink.
In this type of sintering method, when solder melts, due to capillary reason, chip does not have suitable pressure, chip position can be made and offset, while chip and heat sink between also cannot even contact thus occur sintering cavity.The stability of laser, reliability and rate of finished products are had a strong impact on.In order to improve this kind of situation; progressively develop another kind of sintering processing: the agglomerating plant namely adopting suction nozzle pressurization; disclosed in Chinese patent literature CN101515702 " a kind of semiconductor laser tube core sintering device and using method thereof "; by the heat sink front apron place being drawn onto device with the first suction spindle; then under microscopical assisting; with the second suction spindle tube core is drawn onto heat sink upper and put with heat sink edge and aim at; the pressing of depression bar is pushed down tube core, sinters under the environment of nitrogen protection.For another " a kind of instrument aiming at pressure sintering " disclosed in CN101515702A.The distinct disadvantage existed in these methods is that efficiency is low, can only sinter a tube core at every turn, and apparatus design is complicated simultaneously, and the repeatability of its service precision is difficult to ensure.
Chinese patent literature CN203135209U discloses a kind of multi-chip unstressed semiconductor laser encapsulation fixture, comprise base, base is symmetrically arranged with two slide blocks that can horizontally slip, top briquetting is placed between two slide blocks, the upper surface of top briquetting contacts with fixing shell fragment of exerting pressure, and adopts the mode of exerting pressure of shell fragment to carry out pressure sintering to multiple chip.This fixture sinters while can realizing multiple bar bar, but is exerted a force by shell fragment above, and shell fragment is yielding, the uniformity of influence power.
Summary of the invention
For the deficiency that existing high power semiconductor lasers sintering technology exists, the invention provides a kind of structure simple, can the device of contraposition batch sinter semiconductor laser chip and sintering method thereof.
High power semiconductor lasers sintering equipment of the present invention, by the following technical solutions:
This device, comprises base, positioning table, compressing tablet and connecting rod, and positioning table is fixed on base, and positioning table is at least provided with two for placing the location notch of laser thermal sediment, compressing tablet is connected on base by connecting rod.
Base is that positioning table provides support.Positioning table is used for the heat sink sintered location location of high power semiconductor lasers.
The thickness of positioning table is equal to chip of laser and heat sink gross thickness.
Connecting rod is screw rod, is provided with spring.
The sintering method of above-mentioned high power semiconductor lasers sintering equipment, carry out in vacuum chamber or carry out under nitrogen protection atmosphere, step is as follows:
(1) the heat sink of high power semiconductor lasers is placed in each location notch on positioning table, the good In solder of heat sink prior evaporation or AuSn solder;
(2) by adhesion machine, the chip of high power semiconductor lasers is placed in each heat sink precalculated position;
(3) on adhesion machine, keep positioning table motionless, be pressed on chip by connecting rod compressing tablet, make chip and heat sinkly to fix;
(4) the whole device fixing chip be put into vacuum alloying furnace or have in the alloying furnace of nitrogen protection atmosphere; heating-up temperature is controlled according to heat sink upper solder; In solder is heated to 180-220 degree Celsius; AuSn solder is heated to 290-330 degree Celsius; and constant temperature 2-5 minute; then drop to less than 60 degrees Celsius, take out the laser sintered.
The present invention is simple and reasonable, easy to use, and cost is low; Use this device can once sintered multiple laser, by location notch, each chip is positioned, fixed by compressing tablet simultaneously, ensure that chip and heat sinkly have good contact, the chip position skew caused in solder melting process can be prevented simultaneously; Effectively can improve sintering quality and the sintering efficiency of chip of laser.
Accompanying drawing explanation
Fig. 1 is the structural representation of high power semiconductor lasers sintering equipment of the present invention.
In figure: 1, base, 2, positioning table, 3, compressing tablet, 4, connecting rod.
Embodiment
As shown in Figure 1, high power semiconductor lasers sintering equipment of the present invention, comprises base 1, positioning table 2, compressing tablet 3 and blade mounting bar 4.Base 1 provides support for positioning table 2, and be flat underside, base 1 adopts oxygen-free copper to make, and surface can be gold-plated.Good in order to contact, the upper surface polishing of base 1.
Positioning table 2 is fixed on base 1, can adopt fixed forms such as being threaded, gluing, also positioning table 2 and base 1 can be made one.Positioning table 2 adopts oxygen-free copper or ceramic material to make.Positioning table 2 has at least two location notchs, for the location to laser thermal sediment sintered location.The size of location notch is determined according to heat sink size, and positioning table thickness is equal to chip of laser and heat sink gross thickness.On the chip position of high power semiconductor lasers is heat sink by it with solder positions determine.
Compressing tablet 3 is connected on base 1 by connecting rod 4, and connecting rod 4 can be bolt, is provided with spring, to prevent from loosening and being convenient to unclamp.Compressing tablet 3 adopts rigid material to make, and can ensure not yielding at relatively high temperatures, can adopt potsherd, Si sheet, SiC sheet, quartz plate, steel disc etc.
Above-mentioned high power semiconductor lasers sintering equipment is to the sintering method of high power semiconductor lasers, and comprise and use device of the present invention, can carry out in vacuum chamber or carry out under nitrogen protection atmosphere, step be as follows:
(1) by the heat sink location notch being placed on positioning table 2 of high power semiconductor lasers, the good In solder of heat sink prior evaporation or AuSn solder;
(2) under the microscope on adhesion machine, high power semiconductor lasers chip on each heat sink precalculated position is placed;
(3) holding position is motionless, is pressed on high power semiconductor lasers chip by compressing tablet 3 by connecting rod 4, make chip be fixed on heat sink on, make heat sink being fixed on base 1 simultaneously.This process can be carried out under the microscope of adhesion machine, ensures not cause chip to be shifted in the process that compressing tablet 3 presses down, and compressing tablet position is moderate;
(4) the whole device fixing chip be put into vacuum alloying furnace or have in the alloying furnace of nitrogen protection atmosphere, if heat sink prior evaporation is In solder, then be heated to 180-220 degree Celsius, if heat sink solder is AuSn solder, sintering heating-up temperature is 290-330 degree Celsius, and constant temperature 2-5 divides; Make device cool to less than 60 degrees Celsius (to room temperatures) subsequently, take out sintering equipment, complete chip of laser sintering.
Claims (3)
1. a high power semiconductor lasers sintering equipment, comprise base, positioning table, compressing tablet and connecting rod, it is characterized in that, positioning table is fixed on base, positioning table is at least provided with two for placing the location notch of laser thermal sediment, compressing tablet is connected on base by connecting rod.
2. high power semiconductor lasers sintering equipment as claimed in claim 1, it is characterized in that, connecting rod is screw rod, is provided with spring.
3. a sintering method for high power semiconductor lasers sintering equipment described in claim 1, is characterized in that, carry out in vacuum chamber or carry out under nitrogen protection atmosphere, step is as follows:
(1) the heat sink of high power semiconductor lasers is placed in each location notch on positioning table, the good In solder of heat sink prior evaporation or AuSn solder;
(2) by adhesion machine, the chip of high power semiconductor lasers is placed in each heat sink precalculated position;
(3) on adhesion machine, keep positioning table motionless, be pressed on chip by connecting rod compressing tablet, make chip and heat sinkly to fix;
(4) the whole device fixing chip be put into vacuum alloying furnace or have in the alloying furnace of nitrogen protection atmosphere; heating-up temperature is controlled according to heat sink upper solder; In solder is heated to 180-220 degree Celsius; AuSn solder is heated to 290-330 degree Celsius; and constant temperature 2-5 minute; then drop to less than 60 degrees Celsius, take out the laser sintered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410845400.2A CN104518423A (en) | 2014-12-31 | 2014-12-31 | Sintering device of high-power semiconductor laser and sintering method thereof |
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| CN201410845400.2A CN104518423A (en) | 2014-12-31 | 2014-12-31 | Sintering device of high-power semiconductor laser and sintering method thereof |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882781A (en) * | 2015-06-01 | 2015-09-02 | 山东华光光电子有限公司 | Semiconductor laser tube core sintering clamp and sintering method thereof |
| CN105098593A (en) * | 2015-07-23 | 2015-11-25 | 山东华光光电子有限公司 | Self-aligning sintering clamp of semiconductor laser tube core and tube core sintering method |
| CN105244756A (en) * | 2015-11-24 | 2016-01-13 | 山东华光光电子有限公司 | Sintering fixture for micro channel semiconductor laser and sintering method thereof |
| CN105244288A (en) * | 2015-08-28 | 2016-01-13 | 中国电子科技集团公司第四十七研究所 | Method for packaging integrated circuit |
| CN105428995A (en) * | 2015-12-29 | 2016-03-23 | 中国科学院半导体研究所 | Semiconductor laser array sintering device and sintering method |
| CN106340801A (en) * | 2016-01-29 | 2017-01-18 | 北京杏林睿光科技有限公司 | Semiconductor laser unit and mounting method thereof |
| CN107681462A (en) * | 2017-09-12 | 2018-02-09 | 北京工业大学 | A kind of semiconductor chip autoregistration pendulum |
| JP2018163926A (en) * | 2017-03-24 | 2018-10-18 | 日本オクラロ株式会社 | Optical transmission module, optical module, optical transmission device, and manufacturing method thereof |
| CN108747172A (en) * | 2018-08-22 | 2018-11-06 | 重庆航伟光电科技有限公司 | A kind of multichannel COS welding toolings |
| CN109326951A (en) * | 2017-07-31 | 2019-02-12 | 山东华光光电子股份有限公司 | A kind of multiple semiconductor laser tube cores sintering fixture and its sintering method |
| CN110401108A (en) * | 2019-07-31 | 2019-11-01 | 江苏天元激光科技有限公司 | A kind of high-power horizontal array column semiconductor laser |
| CN111092365A (en) * | 2018-10-23 | 2020-05-01 | 山东华光光电子股份有限公司 | Multi-tube-core sintering clamp and sintering method for semiconductor laser with uniform and adjustable pressure |
| CN111628405A (en) * | 2019-02-28 | 2020-09-04 | 潍坊华光光电子有限公司 | High-power conduction cooling packaging structure bar laser sintering fixture and sintering method thereof |
| CN112713497A (en) * | 2019-10-25 | 2021-04-27 | 潍坊华光光电子有限公司 | Die strip fixing carrier for semiconductor laser |
| CN112886381A (en) * | 2020-08-28 | 2021-06-01 | 山东华光光电子股份有限公司 | Device for welding high-power semiconductor laser and using method |
| CN114247952A (en) * | 2020-09-22 | 2022-03-29 | 中国科学院大连化学物理研究所 | Laser crystal welding jig and welding method |
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| CN101330195A (en) * | 2008-07-29 | 2008-12-24 | 山东华光光电子有限公司 | Method for sintering high-power semiconductor laser |
| CN101741011B (en) * | 2009-12-24 | 2011-05-04 | 中国科学院上海微系统与信息技术研究所 | Low-stress encapsulating device and method for semiconductor laser to reliably work in wide temperature region |
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Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882781A (en) * | 2015-06-01 | 2015-09-02 | 山东华光光电子有限公司 | Semiconductor laser tube core sintering clamp and sintering method thereof |
| CN105098593A (en) * | 2015-07-23 | 2015-11-25 | 山东华光光电子有限公司 | Self-aligning sintering clamp of semiconductor laser tube core and tube core sintering method |
| CN105244288B (en) * | 2015-08-28 | 2017-11-07 | 中国电子科技集团公司第四十七研究所 | Method for encapsulating integrated circuit |
| CN105244288A (en) * | 2015-08-28 | 2016-01-13 | 中国电子科技集团公司第四十七研究所 | Method for packaging integrated circuit |
| CN105244756A (en) * | 2015-11-24 | 2016-01-13 | 山东华光光电子有限公司 | Sintering fixture for micro channel semiconductor laser and sintering method thereof |
| CN105428995A (en) * | 2015-12-29 | 2016-03-23 | 中国科学院半导体研究所 | Semiconductor laser array sintering device and sintering method |
| CN106340801A (en) * | 2016-01-29 | 2017-01-18 | 北京杏林睿光科技有限公司 | Semiconductor laser unit and mounting method thereof |
| US11081858B2 (en) | 2017-03-24 | 2021-08-03 | Lumentum Japan, Inc. | Optical transmitter module, optical module, optical transmission equipment and method of manufacturing thereof |
| JP7022513B2 (en) | 2017-03-24 | 2022-02-18 | 日本ルメンタム株式会社 | Optical transmission modules, optical modules, and optical transmission devices, and methods for manufacturing them. |
| JP2018163926A (en) * | 2017-03-24 | 2018-10-18 | 日本オクラロ株式会社 | Optical transmission module, optical module, optical transmission device, and manufacturing method thereof |
| CN109326951B (en) * | 2017-07-31 | 2020-05-12 | 山东华光光电子股份有限公司 | Multiple semiconductor laser tube core sintering clamp and sintering method thereof |
| CN109326951A (en) * | 2017-07-31 | 2019-02-12 | 山东华光光电子股份有限公司 | A kind of multiple semiconductor laser tube cores sintering fixture and its sintering method |
| CN107681462B (en) * | 2017-09-12 | 2019-10-08 | 北京工业大学 | A kind of semiconductor chip autoregistration pendulum |
| CN107681462A (en) * | 2017-09-12 | 2018-02-09 | 北京工业大学 | A kind of semiconductor chip autoregistration pendulum |
| CN108747172B (en) * | 2018-08-22 | 2019-12-10 | 重庆航伟光电科技有限公司 | Multichannel COS welding frock |
| CN108747172A (en) * | 2018-08-22 | 2018-11-06 | 重庆航伟光电科技有限公司 | A kind of multichannel COS welding toolings |
| CN111092365A (en) * | 2018-10-23 | 2020-05-01 | 山东华光光电子股份有限公司 | Multi-tube-core sintering clamp and sintering method for semiconductor laser with uniform and adjustable pressure |
| CN111628405A (en) * | 2019-02-28 | 2020-09-04 | 潍坊华光光电子有限公司 | High-power conduction cooling packaging structure bar laser sintering fixture and sintering method thereof |
| CN111628405B (en) * | 2019-02-28 | 2022-04-01 | 潍坊华光光电子有限公司 | High-power conduction cooling packaging structure bar laser sintering fixture and sintering method thereof |
| CN110401108A (en) * | 2019-07-31 | 2019-11-01 | 江苏天元激光科技有限公司 | A kind of high-power horizontal array column semiconductor laser |
| CN112713497A (en) * | 2019-10-25 | 2021-04-27 | 潍坊华光光电子有限公司 | Die strip fixing carrier for semiconductor laser |
| CN112713497B (en) * | 2019-10-25 | 2022-06-14 | 潍坊华光光电子有限公司 | Die strip fixing carrier for semiconductor laser |
| CN112886381A (en) * | 2020-08-28 | 2021-06-01 | 山东华光光电子股份有限公司 | Device for welding high-power semiconductor laser and using method |
| CN114247952A (en) * | 2020-09-22 | 2022-03-29 | 中国科学院大连化学物理研究所 | Laser crystal welding jig and welding method |
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Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Applicant after: SHANDONG HUAGUANG OPTOELECTRONICS CO., LTD. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Applicant before: Shandong Huaguang Photoelectronic Co., Ltd. |
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Application publication date: 20150415 |
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