CN105244288A - Method for packaging integrated circuit - Google Patents
Method for packaging integrated circuit Download PDFInfo
- Publication number
- CN105244288A CN105244288A CN201510542069.1A CN201510542069A CN105244288A CN 105244288 A CN105244288 A CN 105244288A CN 201510542069 A CN201510542069 A CN 201510542069A CN 105244288 A CN105244288 A CN 105244288A
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- Prior art keywords
- cover plate
- integrated circuit
- potential dividing
- dividing ring
- ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a method for packaging an integrated circuit. The method comprises that a cover plate including a solder ring covers a shell of the integrated circuit to be packaged; a partial pressure ring is placed in the middle portion of the cover plate, and the proportion of the perimeter of the partial pressure ring to the perimeter of the cover plate ranges from 0.6 to 1; a pressure source is utilized to apply a pressure on the middle portion of the partial pressure ring, so that the cover plate is compressed relative to the shell; and the compressed integrated circuit is placed in a sintering furnace and heated, and the solder ring is fused. In the integrated circuit packaging process, the size and distribution of the applied force can be well controlled, the solder ring can flow fully and uniformly in the melting process, and cavities are greatly reduced after solidification of solder.
Description
Technical field
The present invention relates to integrated circuit electronic encapsulation field, particularly for the method for encapsulated integrated circuit.
Background technology
The seal process of the integrated circuit of current band gold-tin eutectic solder ring generally adopts the method for sintering.In sintering process, by external force, a pressure is applied to the solder between cover plate and shell, ensure that in solder fusion process, trickling fully.Fig. 1 executes stressed schematic diagram to integrated circuit in prior art.As shown in Figure 1, the length of side being placed on the length of side opposing cover plates 21 of the potential dividing ring 30 on the cover plate 21 of integrated circuit 20 is very little, and the potential dividing ring 30 matching used fixture 10 relatively little to this length of side is also corresponding very little.In prior art, fixture 10 applied force often too concentrates on the middle part of cover plate 21, and pressure size and distribution situation can not be precisely controlled; In addition, the pin of shell 22 is directly placed on the lower shoe of fixture 10, by the restriction of fixture length, part pin can be placed in the outside of fixture 10, this can cause: if fixture 10 applied pressures are excessive, not only easily damage pin, and can unbalance stress be caused, occur the situation that solder is excessive; If this pressure is too small, then there will be the problem that solder voidage is high.Fig. 2 is the roentgenogram phasor of integrated circuit 20 in prior art.As shown in Figure 2, multiple little solder cavity (cavity is positioned at the black part at edge) is had in this figure, this illustrates that the solder trickling in integrated circuit 20 finished product is uneven, and voidage is comparatively large, and it does not meet the requirement to seal area voidage in GJB548B screening test flow process.
Summary of the invention
In order to solve integrated circuit in encapsulation process, accurately can not control the size of institute's applied pressure and distribution situation, causing solder ring can trickle in fusion processes insufficient, uneven, the problem that after solder solidification, voidage is large.
The present invention proposes a kind of method for encapsulated integrated circuit, the method comprises:
The cover plate comprising solder ring is covered on the shell of integrated circuit to be packaged;
Place potential dividing ring at the middle part of described cover plate, described potential dividing ring is designed to the ratio of the girth of its girth and described cover plate between 0.6 ~ 1;
Utilize pressure source to apply pressure at the middle part of described potential dividing ring, described cover plate is compressed relative to described shell;
The integrated circuit of compression is positioned in sintering furnace and heats, melt described solder ring.
In some embodiments, this potential dividing ring is designed to the ratio of the girth of its girth and described cover plate is 0.8.
In some embodiments, the shape of this potential dividing ring is the rectangle corresponding to the shape of cover plate, and the corresponding length of side of potential dividing ring and the length of side ratio of cover plate are 0.8.
Thus, present embodiment can draw by experiment: when other process conditions are identical, along with the increase of the ratio of the girth (or length of side) of potential dividing ring and cover plate, pressure source to the size of its applied pressure and the control ability of distribution situation in continuous enhancing.When this ratio reaches 0.6, pressure source tends to be steady to the size of its applied pressure and the control ability of distribution situation.When this ratio is more than 1, namely the marginal portion of potential dividing ring is beyond the marginal portion of cover plate, due to the restriction of the Source size that is under pressure, pressure source becomes less stable to the size of its applied pressure and the control ability of distribution situation, and along with the increase of potential dividing ring size, its material consumption also increases.In the present embodiment, the ratio that potential dividing ring is designed to the girth of its girth and described cover plate is 0.8, and now, not only Stress control effect reaches best, and the material of potential dividing ring is also relatively economized.Now solder ring can trickle more fully in fusion processes evenly, after solder solidification, voidage can significantly reduce.
In some embodiments, this potential dividing ring is for comprising Al
2o
3potsherd.
Thus, the potential dividing ring of present embodiment adopts and comprises Al
2o
3potsherd, its hardness is high, and evenness is good, under high temperature without distortion, produce without gas.In stable condition under ensure that the environment of the high temperature of potential dividing ring when encapsulated integrated circuit, high pressure, and can fit tightly with lid surface, be more conducive to the accurate control of pressure size and distribution situation.
In some embodiments, the middle part applied pressure F that described pressure source is arranged in described potential dividing ring meets: F=k × C, wherein the girth of k to be 0.1 ~ 0.2N/mm, C be described cover plate.
In some embodiments, described k is 0.15N/mm.
Thus, present embodiment can be drawn by great many of experiments: when k is 0.1 ~ 0.2N/mm, can the solder ring of melting be pressed very solid at the middle part applied pressure F of potential dividing ring, after solder solidification, voidage can significantly reduce, and there will not be the excessive situation causing solder to overflow of pressure.When k is 0.15N/mm, the control effects of pressure is optimum.
In some embodiments, described pressure source is can the spring chuck of resistance to temperatures as high 333 DEG C ± 5 DEG C.
Thus, the spring chuck selected by present embodiment is simple to operation, effectively can fix packaged tandem circuit, and can provide higher than pressure of the prior art when high temperature (333 DEG C ± 5 DEG C).
In some embodiments, described spring chuck comprises train wheel bridge and lower plate, the bare terminal end of described lower plate is removably provided with the rigid enclosure block of surfacing.
In some embodiments, described train wheel bridge is connected by pivot pivotable with lower plate, is furnished with spiral connecting piece around described pivot, and one end of described spiral connecting piece is against train wheel bridge, and the other end is against lower plate.
Thus, the spring chuck that present embodiment adopts comprises train wheel bridge and lower plate, and be face contact during spring chuck clamping potential dividing ring, contact area is large, and the size of institute's applied pressure and distribution situation can be well controlled.In addition, the bare terminal end of lower plate is removably provided with the rigid enclosure block of surfacing, and this rigid enclosure block can be used as the carrying platform of integrated circuit, not only can well securing integrated circuit, prevents pin from damaging, can also play the effect of dividing potential drop.In addition, because this rigid enclosure block has certain thickness, this can increase the subtended angle of fixture, thus can increase institute's applied pressure.
The present invention can solve integrated circuit in encapsulation process by easy hardware, to the size of institute's applied pressure and the problem that can not accurately control of distribution situation, solder can be trickled fully in fusion processes and evenly, after solder solidification, cavity is significantly reduced.
Accompanying drawing explanation
Fig. 1 executes stressed schematic diagram to integrated circuit in prior art;
Fig. 2 is the roentgenogram phasor of integrated circuit in prior art;
Fig. 3 is the schematic diagram of the pressure source of an embodiment of the present invention;
Fig. 4 (a) is the schematic diagram of the front view of rigid enclosure block in Fig. 3;
Fig. 4 (b) is the schematic diagram of the end view of rigid enclosure block in Fig. 3;
Fig. 5 be an embodiment of the present invention stressed schematic diagram is executed to integrated circuit;
Fig. 6 is the method schematic diagram for encapsulated integrated circuit of an embodiment of the present invention;
Fig. 7 is the roentgenogram phasor of an embodiment of the present invention.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with the drawings and specific embodiments, invention is described in further detail.Although show disclosure exemplary embodiment in accompanying drawing, however should be appreciated that can realize the present invention in a variety of manners and not should limit by the embodiment set forth here.On the contrary, provide these embodiments be in order to can be more thorough understanding the present invention, and complete for scope of the present invention can be conveyed to those skilled in the art.
Fig. 3 is the schematic diagram of the pressure source of an embodiment of the present invention.As shown in Figure 3, this pressure source is spring chuck 100.This spring chuck 100 comprises train wheel bridge 101 and lower plate 102, the bare terminal end of described lower plate 102 is removably provided with the rigid enclosure block 103 of surfacing.This train wheel bridge 101 is connected by pivot 104 pivotable with lower plate 102, is furnished with spiral connecting piece 105 around described pivot 104, and one end of described spiral connecting piece 105 is against train wheel bridge 101, and the other end is against lower plate 102.
In the present embodiment, spring chuck 100 adopts exotic material, this material requirements stable chemical nature, and not easily volatilization gas in heating environment, can not lose efficacy under high temperature (333 DEG C ± 5 DEG C).This spring chuck 100 can be spring clip, such as iron spring, molybdenum sheet spring etc.The pressure of similar size can be provided as long as ensure not lose efficacy in above-mentioned environment, also can adopt the metal spring of other type.
In the present embodiment, the contact in face both when spring chuck 100 clamps potential dividing ring, contact area is large, and the size of institute's applied pressure and distribution situation can be well controlled.
((b) is respectively the front view of rigid enclosure block and the schematic diagram of end view in Fig. 3 to Fig. 4 (a) with Fig. 4.As shown in Figure 4, on this rigid enclosure block, side is provided with an opening, this opening just in time hold in Fig. 3 the bare terminal end of the lower plate 102 of fixture 100 insert.
In the present embodiment, the bare terminal end of lower plate is removably provided with the rigid enclosure block of surfacing, and this rigid enclosure block can be used as the carrying platform of integrated circuit, not only can well securing integrated circuit, can also play the effect of dividing potential drop.In addition, because this rigid enclosure block has certain thickness, just in time make the pin of integrated circuit be placed in outside rigid enclosure block, all do not contact with lower plate with rigid enclosure block, not only can prevent pin from damaging, pressure can also be prevented uneven.In addition, this can increase the subtended angle of fixture, thus can increase institute's applied pressure.
Fig. 5 be an embodiment of the present invention stressed schematic diagram is executed to integrated circuit.As shown in Figure 5, rigid enclosure block 103 on the bare terminal end of the lower plate 102 of the spring chuck 100 in Fig. 3 is as carrying platform, place the shell 22 (such as model is the shell of PGA84) of integrated circuit 20 to be packaged on the platform, this platform plays the effect of dividing potential drop, the pin of this shell 22 is just in time placed in the outside of rigid enclosure block 103 in addition, avoid and directly contact with lower plate 102 with rigid enclosure block 130, this addresses the problem following problem of the prior art: the pin of shell 22 is directly placed on the lower shoe of spring chuck 100, by the restriction of spring chuck 100 length, part pin can be placed in the outside of spring chuck 100, if spring chuck 100 applied pressures are excessive, not only easily damage pin, and can unbalance stress be caused, there is the situation that solder is excessive, if this pressure is too small, then there will be the problem that solder voidage is high.
Covered on shell 22 by cover plate 21 with gold-tin eutectic solder ring, then place potential dividing ring 30 at the middle part of cover plate 21, the train wheel bridge 101 of spring chuck 100 is clamped in the middle part of potential dividing ring 30.When this integrated circuit 20 encapsulates, each device is horizontal positioned.
As shown in Figure 5, the length of side being placed on the potential dividing ring 30 on the cover plate 21 of integrated circuit 20 accounts for the ratio of the length of side of cover plate than much bigger in prior art, also corresponding comparatively large and its clamping part and potential dividing ring 30 are that face contacts with the relatively large matching used fixture of potential dividing ring 30 100 of this length of side, this not only can provide larger pressure, and pressure size and distribution situation can be precisely controlled.
Present embodiment can be drawn by great many of experiments: when k is 0.1 ~ 0.2N/mm, can the solder ring of melting be pressed very solid at the middle part applied pressure F of potential dividing ring, after solder solidification, voidage significantly reduces, and there will not be the situation that the excessive solder of pressure overflows.When k is 0.15N/mm, control effects is optimum.
Fig. 6 is the method schematic diagram for encapsulated integrated circuit of an embodiment of the present invention.As shown in Figure 6, the method for encapsulated integrated circuit comprises the following steps:
S601: the cover plate comprising solder ring is covered on the shell of integrated circuit to be packaged.
S602: place potential dividing ring at the middle part of cover plate.
In the present embodiment, potential dividing ring can adopt high temperature resistant, stable chemical nature, the material of not easily volatilization gas in heating environment.
In the present embodiment, potential dividing ring is for comprising Al
2o
3potsherd.
Thus, present embodiment adopts and comprises Al
2o
3the potential dividing ring of ceramic material, its hardness is high, and evenness is good, without distortion under high temperature, produces without gas.In stable condition under ensure that the environment of the high temperature of potential dividing ring when encapsulated integrated circuit, high pressure, and can fit tightly with lid surface.Be more conducive to the accurate control of pressure size and distribution situation.
In some embodiments, this potential dividing ring is designed to the interval of the ratio of the girth of its girth and described cover plate for [0.6,1].
In some embodiments, this potential dividing ring is designed to the ratio of the girth of its girth and described cover plate is 0.8.
Do nine groups of experiments below, verified that identical (such as pressure source is identical, and heating time is identical, and heating-up temperature is identical in other technique.) condition under, the potential dividing ring of different size and the cover plate of same size are on the impact of the solder voidage of encapsulated integrated circuit finished product.
In the present embodiment, the shape of potential dividing ring is the rectangle corresponding to the shape of cover plate, and the cover plate length of side is 23.876mm.To have employed the potential dividing ring of nine kinds of different sizes, when other technique is identical by cover plate:
First group of experiment:
The length of side of potential dividing ring is 9.550mm, and it accounts for the cover plate length of side 40%.Carry out X-ray radiography to the finished product of this integrated circuit, from its photographic view, the cavity in the solder of integrated circuit finished product is more.
Second group of experiment:
The length of side of potential dividing ring is 11.938mm, and it accounts for the cover plate length of side 50%.Carry out X-ray radiography to the finished product of this integrated circuit, from its photographic view, the voidage in the solder of integrated circuit finished product is smaller compared with battery of tests.
3rd group of experiment:
The length of side of potential dividing ring is 14.325mm, and it accounts for the cover plate length of side 60%.Carry out X-ray radiography to the finished product of this integrated circuit, from its photographic view, the cavity in the solder of integrated circuit finished product be can't see substantially.This illustrates solder trickling evenly, and voidage is less.
4th group of experiment:
The length of side of potential dividing ring is 16.713mm, and it accounts for the cover plate length of side 70%.Carry out X-ray radiography to the finished product of this integrated circuit, from its photographic view, the cavity in the solder of integrated circuit finished product be can't see substantially.This illustrates solder trickling evenly, and voidage is less.
5th group of experiment:
The length of side of potential dividing ring is 19.100mm, and it accounts for the cover plate length of side 80%.Carry out X-ray radiography to the finished product of this integrated circuit, from its photographic view, the cavity in the solder of integrated circuit finished product be can't see substantially.This illustrates solder trickling evenly, and voidage is less.
6th group of experiment:
The length of side of potential dividing ring is 21.488mm, and it accounts for the cover plate length of side 90%.Carry out X-ray radiography to the finished product of this integrated circuit, from its photographic view, the cavity in the solder of integrated circuit finished product be can't see substantially.This illustrates solder trickling evenly, and voidage is less.
7th group of experiment:
The length of side of potential dividing ring is 23.876mm, and it accounts for the cover plate length of side 100%.Carry out X-ray radiography to the finished product of this integrated circuit, from its photographic view, the cavity in the solder of integrated circuit finished product be can't see substantially.This illustrates solder trickling evenly, and voidage is less.
8th group of experiment:
The length of side of potential dividing ring is 28.651mm, and it accounts for the cover plate length of side 120%.X-ray radiography is carried out to the finished product of this integrated circuit, from its photographic view, in the solder of integrated circuit finished product, has occurred some little cavities.
9th group of experiment:
The length of side of potential dividing ring is 35.814mm, and it accounts for the cover plate length of side 150%.X-ray radiography is carried out to the finished product of this integrated circuit, from its photographic view, in the solder of integrated circuit finished product, has occurred some little cavities.
Thus, present embodiment can draw by experiment: when other process conditions are identical, along with the increase of the ratio of the length of side of potential dividing ring and cover plate, pressure source to the size of its applied pressure and the control ability of distribution situation in continuous enhancing.When this ratio reaches 0.6, pressure source tends to be steady to the size of its applied pressure and the control ability of distribution situation.When this ratio is more than 1 time (namely the marginal portion of potential dividing ring is beyond the marginal portion of cover plate), due to the restriction of the Source size that is under pressure, pressure source becomes less stable to the size of its applied pressure and the control ability of distribution situation, some little cavities have been there is in the solder of integrated circuit finished product, and along with the increase of potential dividing ring size, the consumption of its material also increases.
The ratio being designed to the length of side of its length of side and described cover plate at the potential dividing ring of present embodiment is 0.8, and now, Stress control effect is not only best, and the material of potential dividing ring is relatively economized.Now solder ring can trickle more fully in fusion processes evenly, after solder solidification, cavity is significantly reduced.
In addition, on demand potential dividing ring can be designed to the shapes such as annular, triangle and ellipse.
S603: utilize pressure source to apply pressure at the middle part of described potential dividing ring, described cover plate is compressed relative to described shell.
In the present embodiment, this pressure source is spring chuck described in Fig. 3.
In the present embodiment, the middle part applied pressure F that described pressure source is arranged in described potential dividing ring meets: F=k × C, wherein the girth of k to be 0.1 ~ 0.2N/mm, C be described cover plate.
In some embodiments, described k is 0.15N/mm.
Thus, present embodiment can be drawn by great many of experiments: when k is 0.1 ~ 0.2N/mm, can press very solid by the solder ring of melting at the middle part applied pressure F of potential dividing ring, after solder solidification, cavity is significantly reduced, and there will not be the situation that the excessive solder of pressure overflows.When k is 0.15N/mm, control effects is optimum.
S604: be positioned in sintering furnace by the integrated circuit of compression and heat, melts described solder ring, completes the encapsulation of integrated circuit.
Fig. 7 is the roentgenogram phasor of an embodiment of the present invention.As shown in Figure 7, substantially there is not the cavity in the solder shown in Fig. 1 in this figure, solder trickling is described evenly, voidage is less, meets the requirement to seal area voidage in GJB548B screening test flow process.
Above-described is only some embodiments of the present invention.For the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (9)
1., for the method for encapsulated integrated circuit, comprising:
The cover plate comprising solder ring is covered on the shell of integrated circuit to be packaged;
Place potential dividing ring at the middle part of described cover plate, described potential dividing ring is designed to the ratio of the girth of its girth and described cover plate between 0.6 ~ 1;
Utilize pressure source to apply pressure at the middle part of described potential dividing ring, described cover plate is compressed relative to described shell;
The integrated circuit of compression is positioned in sintering furnace and heats, melt described solder ring.
2. method according to claim 1, wherein, the ratio that described potential dividing ring is designed to the girth of its girth and described cover plate is 0.8.
3. method according to claim 2, wherein, the shape of described potential dividing ring is the rectangle corresponding to the shape of cover plate, and the corresponding length of side of potential dividing ring and the length of side ratio of cover plate are 0.8.
4. the method according to any one of claim 1-3, wherein, described potential dividing ring is for comprising Al
2o
3potsherd.
5. method according to claim 1, wherein, the middle part applied pressure F that described pressure source is arranged in described potential dividing ring meets: F=k × C, wherein the girth of k to be 0.1 ~ 0.2N/mm, C be described cover plate.
6. method according to claim 5, wherein, described k is 0.15N/mm.
7. method according to claim 5, wherein, described pressure source is can the spring chuck of resistance to 333 DEG C ± 5 DEG C.
8. method according to claim 7, wherein, described spring chuck comprises train wheel bridge and lower plate, the bare terminal end of described lower plate is removably provided with the rigid enclosure block of surfacing.
9. method according to claim 8, wherein, described train wheel bridge is connected by pivot pivotable with lower plate, is furnished with spiral connecting piece around described pivot, and one end of described spiral connecting piece is against train wheel bridge, and the other end is against lower plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542069.1A CN105244288B (en) | 2015-08-28 | 2015-08-28 | Method for encapsulating integrated circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542069.1A CN105244288B (en) | 2015-08-28 | 2015-08-28 | Method for encapsulating integrated circuit |
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| CN105244288A true CN105244288A (en) | 2016-01-13 |
| CN105244288B CN105244288B (en) | 2017-11-07 |
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| CN104518423A (en) * | 2014-12-31 | 2015-04-15 | 山东华光光电子有限公司 | Sintering device of high-power semiconductor laser and sintering method thereof |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100155992A1 (en) * | 2008-12-24 | 2010-06-24 | Shinko Electric Industries Co., Ltd. | Mold resin molding method and mold resin molding apparatus |
| CN203135209U (en) * | 2013-04-02 | 2013-08-14 | 中国电子科技集团公司第十三研究所 | Multi-chip stress-free semiconductor laser packaging clamp |
| CN204221277U (en) * | 2014-11-18 | 2015-03-25 | 江苏博普电子科技有限责任公司 | A kind of air-tightness sealing cap fixture based on hot plate heating |
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| CN105244288B (en) | 2017-11-07 |
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