CN215342513U - Device for batch eutectic welding of single-chip microwave integrated circuit chips - Google Patents
Device for batch eutectic welding of single-chip microwave integrated circuit chips Download PDFInfo
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- CN215342513U CN215342513U CN202120423394.7U CN202120423394U CN215342513U CN 215342513 U CN215342513 U CN 215342513U CN 202120423394 U CN202120423394 U CN 202120423394U CN 215342513 U CN215342513 U CN 215342513U
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Abstract
The invention provides a device for batch eutectic welding of single microwave integrated circuit chips, which is characterized in that a mounting frame is placed in an eutectic furnace, a carrier, a soldering lug, a chip and an accompanying lug are sequentially placed in a positioning groove in a positioning module, the positioning module is placed in the mounting frame, a pressure module is utilized to provide welding pressure for the chip through the accompanying lug, and the mounting is completed to perform eutectic welding. According to the invention, the welding device is adopted to complete eutectic welding, the traditional mode of manual welding on a hot table is replaced, the welding is completed by using the device, the simultaneous positioning of a plurality of chips can be realized in batch, pressure is provided for the chips in the welding process, the eutectic process is completed under the protection of inert gas, and the low-void-ratio welding is realized. In addition, welding is realized through the device, and the risk of damage to the chip caused by manual operation can be effectively reduced.
Description
Technical Field
The invention relates to the field of welding, in particular to a chip eutectic welding device.
Background
In the microwave and millimeter wave communication field, because the gallium arsenide/gallium nitride monolithic microwave integrated circuit chip has the advantages of high power density, small volume, wide band, good consistency and the like, the gallium arsenide/gallium nitride monolithic microwave integrated circuit chip plays an important role in a microwave multifunctional microwave component and is a core component in the microwave multi-chip component. The chip generates a large amount of heat during operation. In order to dissipate heat quickly and at the same time prevent the chips from cracking during operation, it is necessary to mount the chips on a heat-conducting carrier that is thermally matched. The molybdenum-copper carrier has the advantages of low expansion coefficient and high thermal conductivity, is an excellent electronic packaging material, has low cost and flexible use, and is used as a heat dissipation carrier for assembling gallium arsenide/gallium nitride monolithic microwave integrated circuit chips in the industry. In addition, the power amplifier chip is assembled on the molybdenum-copper carrier with proper thickness, the height of the chip is the same as that of the substrate, the operation is convenient when the gold wire bonding and other electrical interconnections are carried out, the microwave characteristic is good, and the reliability is high.
The assembly methods of these chips are epoxy conductive adhesive bonding and eutectic soldering. Compared with the conductive adhesive bonding, the eutectic welding has the advantages of high heat transfer efficiency, uniform heat dissipation, low electric shock resistance, high welding strength, good reliability and good process consistency, and is particularly suitable for assembling high-frequency and high-power devices. Therefore, the assembly of high-power microwave integrated circuit chips generally uses eutectic soldering.
The eutectic welding mode mainly comprises three modes, namely manual eutectic, eutectic of a eutectic chip mounter and eutectic of a eutectic furnace. Firstly, the chip welded in front can be heated for a long time in a multi-chip eutectic friction mode in sequence, so that the risk of damaging a device is caused, and meanwhile, the first chip is easily influenced during the welding operation of the second chip; second, in the monolithic microwave integrated circuit chip, the substrate is mostly GaAs, the material is very brittle, and tweezers easily damage the chip when force is applied. Therefore, a new process is needed to solve the above problems; thirdly, the manual eutectic efficiency is low, and the requirement of large-scale production cannot be met. Eutectic of the eutectic chip mounter adopts full-automatic equipment to automatically pick up chips, friction eutectic welding is carried out in sequence, each time of eutectic welding needs preheating, heat preservation, heating, welding and cooling, actual welding efficiency is still not high, and requirements of batch production cannot be met. The eutectic furnace is adopted for eutectic welding under the protection of nitrogen, tens of chips can be simultaneously eutectic at one time by using a special tool, the method is a feasible process mode which can meet the requirements of batch production at present, but the problems of inconsistent temperature of hot plates and low heat transfer efficiency of multiple heat transfer interfaces exist.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a device for batch eutectic welding of a single microwave integrated circuit chip. In order to overcome the disadvantages that the temperature of a hot plate is inconsistent and the heat transfer efficiency of a plurality of heat transfer interfaces is low during eutectic melting of an eutectic furnace, and simultaneously the chip positioning and pressure providing are ensured, and the device has easy operability, the invention provides a device for batch eutectic welding of single-chip microwave integrated circuit chips, and through the device, the welding pressure can be provided for the chips while the multi-chip positioning is realized during eutectic welding; in addition, the heating mechanism and the welding area of the eutectic furnace are only provided with one layer of graphite plate, so that the heat transfer efficiency is high, and the device can realize batch production.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a device for batch eutectic welding of monolithic microwave integrated circuit chips comprises a mounting frame, a positioning module and a pressure module, wherein the mounting frame, the positioning module and the pressure module are sequentially arranged from bottom to top; the surface of the pressure module is uniformly distributed with a guide through hole array for mounting the compression columns, the position of each guide through hole corresponds to the position of a blind groove on the upper surface of the positioning module, the center of each guide through hole is superposed with the center of the blind groove of the positioning module, the positioning module is placed in a stepped cavity in the center of the mounting frame, the pressure modules are vertically connected with the mounting frame through positioning pins and are positioned with each other, and the compression columns provide pressure for the chip through the guide through holes;
firstly, the rack is placed in an eutectic furnace, then the carrier, the soldering lug, the chip and the accompanying lug are sequentially placed in the positioning groove in the positioning module, then the positioning module is placed in the rack, then the pressure module is used for providing welding pressure for the chip through the accompanying lug, the installation is completed, and eutectic welding is carried out.
In the blind slot array, the size of the blind slot is 0.025mm larger than the external size of the chip carrier on each side.
The lower surface of the positioning module is an arc surface, and the radian is 8 degrees.
The pressure provided by the pressure module is determined according to the size of the chip and is 0.5g/mm2And the effect of adjusting the pressure is achieved by adjusting the height of the compression leg.
When the pressure module provides pressure for the chip, the chip surface is provided with the accompanying sheet, the pressing column does not contact the chip, and the pressure is transmitted to the chip through the accompanying sheet.
The accompanying sheet is of a pot cover-shaped structure, the size of the accompanying sheet is the same as that of the chip, the depth of the cavity is 0.1mm, and the wall thickness of the cavity is 0.1 mm.
According to the invention, the welding device is adopted to complete eutectic welding, the traditional mode of manual welding on a hot table is replaced, the welding is completed by using the device, the simultaneous positioning of a plurality of chips can be realized in batch, pressure is provided for the chips in the welding process, the eutectic process is completed under the protection of inert gas, and the low-void-ratio welding is realized. In addition, welding is realized through the device, and the risk of damage to the chip caused by manual operation can be effectively reduced.
Drawings
Fig. 1 is a front view of the present invention, in which fig. 1 (a) is a front view of the present invention, and fig. 1 (b) is a partially enlarged view.
Fig. 2 is an exploded view of the present invention.
Fig. 3 is a structural view of the racking of the present invention.
Fig. 4 is a diagram of a positioning module of the present invention.
Fig. 5 is a block diagram of the pressure module of the invention.
FIG. 6 is a view showing the structure of a plunger according to the present invention.
FIG. 7 is an X-ray photograph showing the result of carrying out the present invention.
The device comprises a mounting frame 1, a positioning module 2, a pressure module 3, a compression column 4, a positioning pin 5, a carrier 6, a soldering lug 7, a chip 8 and a chip 9.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
The present invention includes, but is not limited to, the following examples.
The utility model provides a device for eutectic welding is in batches planted to monolithic microwave integrated circuit chip, includes dress frame, orientation module and pressure module, follows supreme dress frame, orientation module and the pressure module of being in proper order down, wherein dress frame size is 350mm in the book
250mm, a step cavity for placing a positioning module is arranged in the center of the mounting frame, and the size of the step cavity is 250mm multiplied by 200 mm; the size of the positioning module is 250mm multiplied by 200mm, blind groove arrays for placing chips are uniformly distributed on the upper surface of the positioning module, the number of the arrays is 10 multiplied by 10, the size of the blind grooves is determined according to the size of the chips, the groove depth is 0.8mm, and when the positioning module is used, a chip carrier, a soldering lug, the chips and an accompanying lug are sequentially placed in the blind grooves; the surface of the pressure module is uniformly distributed with guide through hole arrays for mounting the compression columns, the number of the arrays is 10 multiplied by 10, the positions of the guide through holes correspond to the positions of blind grooves on the upper surface of the positioning module, and the centers of the guide through holes and the centers of the blind grooves of the positioning module are ensured to be horizontally coincided. When the device is used, the positioning module is placed in a stepped cavity in the center of the mounting frame, the pressure module is vertically connected with the mounting frame through the positioning pin and is positioned with each other, and the pressure column provides pressure for the chip through the guide through hole.
The upper surface of the positioning module is uniformly distributed with a chip blind slot array, and the size of the blind slot is 0.025mm larger than the size of each side of the chip carrier.
The lower surface of the positioning module is an arc surface, and the radian is 8 degrees.
And the positioning module blind groove is internally provided with a chip carrier, a soldering lug, a chip and an accompanying lug in sequence.
The pressure module can provide pressure determined according to the chip sizeFixed at 0.5g/mm2The pressure is adjusted by adjusting the height of the compression leg.
When the pressure module provides pressure for the chip, the chip surface is provided with the accompanying sheet, the pressing column does not contact the chip, and the pressure is transmitted to the chip through the accompanying sheet.
The accompanying sheet is of a pot cover-shaped structure, the size of the accompanying sheet is the same as that of the chip, the depth of the cavity is 0.1mm, and the wall thickness of the cavity is 0.1 mm.
When the device is used, a mounting frame is firstly placed in an eutectic furnace, then a carrier, a soldering lug, a chip and a accompanying piece are sequentially placed in a positioning groove in a positioning module, then the positioning module is placed in the mounting frame, then a pressure module is utilized to provide welding pressure for the chip through the accompanying piece, the mounting is completed, and eutectic welding is carried out.
As shown in figures 1 and 2, the device for batch eutectic soldering of the single-chip microwave integrated circuits comprises a mounting frame, a positioning module and a pressure module. The center of the mounting frame is provided with a stepped cavity for placing a positioning module, the upper surface of the positioning module is provided with a blind groove array for placing a chip, the pressure module is provided with a guide through hole array for mounting a pressure column, and the three-layer structure finishes mutual positioning through a positioning pin.
When the device is used, the flow is as follows:
(1) FIG. 3 shows that the mounting frame is placed inside the eutectic furnace chamber according to the four corner positioning holes, and the furnace chamber is tightly matched with the mounting frame;
(2) as shown in fig. 4, the carrier, the soldering lug and the chip are sequentially placed in the chip positioning groove on the upper surface of the chip positioning module under a body microscope, and then the accompanying piece with the pot cover structure is placed on the surface of the chip;
(3) as shown in fig. 5, the pressure module is mounted on the mounting frame through the positioning pin on the mounting frame, as shown in fig. 6, the compression leg is mounted on the positioning module through the guiding through hole, the bottom end of the compression leg is in contact with the accompanying sheet to provide welding pressure, and the pressure is 0.5g/mm2；
(4) And performing eutectic welding after the installation is finished.
Performance testing
In order to verify the improvement effect of the invention on the batch eutectic soldering of the monolithic microwave integrated circuits, the following (one) to (three) were performed.
Measuring welding temperature in furnace body
The test adopts the thermocouple to measure whether the temperature in the furnace cavity is uniform or not and compares the temperature uniformity with the temperature uniformity when the device is not used. The test conditions are as follows: the welding temperature is 320 ℃, the welding time is 30s, and 5 thermocouples are respectively placed at the four corners and the center of the welding area of the device for measurement. The results are shown in table 1:
as can be seen from Table 1, the maximum temperature difference of the surface of the hot plate is 4.9 ℃ after the device is used, the maximum temperature difference of the surface of the hot plate is 8.4 ℃ without the device, and the device has obvious improvement on temperature consistency.
(II) preparing eutectic welding sample
Example (b):
a device for batch eutectic soldering of monolithic microwave integrated circuits comprises a mounting frame, a positioning module and a pressure module. The center of the mounting frame is provided with a stepped cavity for placing a positioning module, the upper surface of the positioning module is provided with a blind groove array for placing a chip, the pressure module is provided with a guide through hole array for mounting a pressure column, and the three-layer structure finishes mutual positioning through a positioning pin.
When the device is used, the flow is as follows:
(1) placing the mounting frame in the eutectic furnace chamber according to the four-corner positioning holes, wherein the furnace chamber is tightly matched with the mounting frame;
(2) placing a carrier, a soldering lug and a chip in a chip positioning groove on the upper surface of a chip positioning module in sequence under a body microscope, and then placing an accompanying piece with a pot cover structure on the surface of the chip;
(3) install pressure module to the dress frame through the locating pin on the dress frame, install the compression leg to the locating module through the direction through-hole on, compression leg bottom contacts with accompanying the piece, provides welding pressure, and the pressure size is 0.5g/mm2；
(4) And after the installation is finished, eutectic welding is carried out, wherein the eutectic welding temperature is 320 ℃, and the welding time is 30 s.
The whole flow time is about 30min, 50 chips can be placed in the device, and the production efficiency is about 100 chips/hour.
(III) X-ray testing
The solder voidage was tested as specified in GJB548B-2005 microelectronic device test methods and procedures, method 2012.1, "X-ray photography". As a result, as shown in FIG. 7, the weld void ratio was 2%, and the standard requirements were satisfied.
The welding strength is tested according to the specification of a method 2019.2 'chip shear strength' in a method of testing microelectronic devices and procedures GJB548B-2005, the shear strength is 732.5N, the chip separation mode is 'falling off, more than 25% of chips remain', and the standard requirements are met.
In conclusion, the device can obtain the eutectic module of the microwave integrated circuit chip with good welding performance and can meet the industrial batch production requirement.
The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solution of the present invention by those skilled in the art should fall within the protection scope defined by the claims of the present invention without departing from the spirit of the present invention.
Claims (6)
1. The utility model provides a device that is used for eutectic welding in batches of monolithic microwave integrated circuit chip, includes dress frame, orientation module and pressure module, its characterized in that:
the device for batch eutectic welding of the single microwave integrated circuit chips sequentially comprises a mounting frame, a positioning module and a pressure module from bottom to top, wherein a step cavity for placing the positioning module is arranged in the center of the mounting frame, the step cavity and the positioning module are the same in size, blind groove arrays for placing the chips are uniformly distributed on the upper surface of the positioning module, the size of each blind groove is determined according to the size of the chip, and a chip carrier, a soldering lug, the chip and an accompanying lug are sequentially placed into the blind groove during use; the surface of the pressure module is uniformly distributed with a guide through hole array for mounting the compression columns, the position of each guide through hole corresponds to the position of a blind groove on the upper surface of the positioning module, the center of each guide through hole is superposed with the center of the blind groove of the positioning module, the positioning module is placed in a stepped cavity in the center of the mounting frame, the pressure modules are vertically connected with the mounting frame through positioning pins and are positioned with each other, and the compression columns provide pressure for the chip through the guide through holes;
firstly, the rack is placed in an eutectic furnace, then the carrier, the soldering lug, the chip and the accompanying lug are sequentially placed in the positioning groove in the positioning module, then the positioning module is placed in the rack, then the pressure module is used for providing welding pressure for the chip through the accompanying lug, the installation is completed, and eutectic welding is carried out.
2. The apparatus of claim 1, wherein the apparatus further comprises:
in the blind slot array, the size of the blind slot is 0.025mm larger than the external size of the chip carrier on each side.
3. The apparatus of claim 1, wherein the apparatus further comprises:
the lower surface of the positioning module is an arc surface, and the radian is 8 degrees.
4. The apparatus of claim 1, wherein the apparatus further comprises:
the pressure provided by the pressure module is determined according to the size of the chip and is 0.5g/mm2And the effect of adjusting the pressure is achieved by adjusting the height of the compression leg.
5. The apparatus of claim 1, wherein the apparatus further comprises:
when the pressure module provides pressure for the chip, the chip surface is provided with the accompanying sheet, the pressing column does not contact the chip, and the pressure is transmitted to the chip through the accompanying sheet.
6. The apparatus of claim 1, wherein the apparatus further comprises:
the accompanying sheet is of a pot cover-shaped structure, the size of the accompanying sheet is the same as that of the chip, the depth of the cavity is 0.1mm, and the wall thickness of the cavity is 0.1 mm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114839716A (en) * | 2022-07-05 | 2022-08-02 | 天津华慧芯科技集团有限公司 | Optical modulator structure capable of realizing low roughness of end face and preparation method |
| CN114888417A (en) * | 2022-06-10 | 2022-08-12 | 中国电子科技集团公司第三十八研究所 | Small microstrip high-precision induction welding method |
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2021
- 2021-02-26 CN CN202120423394.7U patent/CN215342513U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114888417A (en) * | 2022-06-10 | 2022-08-12 | 中国电子科技集团公司第三十八研究所 | Small microstrip high-precision induction welding method |
| CN114888417B (en) * | 2022-06-10 | 2023-11-21 | 中国电子科技集团公司第三十八研究所 | Small microstrip high-precision induction welding method |
| CN114839716A (en) * | 2022-07-05 | 2022-08-02 | 天津华慧芯科技集团有限公司 | Optical modulator structure capable of realizing low roughness of end face and preparation method |
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