CN105225970A - A kind of semiconductor memory makes mould - Google Patents
A kind of semiconductor memory makes mould Download PDFInfo
- Publication number
- CN105225970A CN105225970A CN201410286622.5A CN201410286622A CN105225970A CN 105225970 A CN105225970 A CN 105225970A CN 201410286622 A CN201410286622 A CN 201410286622A CN 105225970 A CN105225970 A CN 105225970A
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- China
- Prior art keywords
- semiconductor memory
- substrate
- fixture
- mold
- mould
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
A kind of semiconductor memory provided by the invention makes mould, and inner injection ring resene comprises: mold; Correspondence covers the bed die of described mold, be formed with the space for described epoxy resin flowing, described bed die is provided with substrate orientation bar, described substrate orientation bar one end is provided with at least one pair of keeper outwards diverged to, leave the space for arranging fixture between described keeper, described fixture is used for fixing described substrate; Wherein, described substrate back fixes with described fixture upward; Because the flow velocity of substrate back will, faster than front, make the pressure of substrate back be greater than front, thus suppress downwards and do not have resin flow.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, particularly relate to a kind of semiconductor memory and make mould.
Background technology
Along with memory chip volume reduces, in the design and the chip attach position that use substrate, during sealed in unit use existing mold operation, the flowing of epoxy resin does not meet the requirement of new product, cause resin to spill into outside substrate package, cause a large amount of defective products to produce.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of semiconductor memory to make mould, solves the problem that in existing epoxy resin injection mold, resin overflows.
For achieving the above object and other relevant objects, the invention provides a kind of semiconductor memory and make mould, inner injection ring resene, described mould comprises: mold; Correspondence covers the bed die of described mold, be formed with the space for described epoxy resin flowing, described bed die is provided with substrate orientation bar, described substrate orientation bar one end is provided with at least one pair of keeper outwards diverged to, leave the space for arranging fixture between described keeper, described fixture is used for fixing described substrate; Wherein, described substrate back fixes with described fixture upward.
Preferably, described epoxy resin is greater than the flow velocity in described substrate front side at the flow velocity of described substrate back, to make to be greater than applying pressure to described substrate front side to the applying pressure of described substrate back.
Preferably, described fixture section shape comprises: parallel upper and lower straight line; Left side connects the arc limit of the evagination of described upper and lower straight line; And right side connects described following straight line.
Preferably, described mold is provided with exhaust passage.
As mentioned above, a kind of semiconductor memory provided by the invention makes mould, and inner injection ring resene comprises: mold; Correspondence covers the bed die of described mold, be formed with the space for described epoxy resin flowing, described bed die is provided with substrate orientation bar, described substrate orientation bar one end is provided with at least one pair of keeper outwards diverged to, leave the space for arranging fixture between described keeper, described fixture is used for fixing described substrate; Wherein, described substrate back fixes with described fixture upward; Because the flow velocity of substrate back will, faster than front, make the pressure of substrate back be greater than front, thus suppress downwards and do not have resin flow.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation that semiconductor memory of the present invention makes an embodiment of bed die in mould.
Fig. 2 is shown as the structural representation that semiconductor memory of the present invention makes an embodiment of keeper in mould.
Fig. 3 is shown as the structural representation that semiconductor memory of the present invention makes an embodiment of fixture in mould.
Fig. 4 is shown as the structural representation that semiconductor memory of the present invention makes an embodiment of mold in mould.
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 4, the invention provides a kind of semiconductor memory and make mould, inner injection ring resene, described mould comprises: bed die 2 and mold 1.
As shown in Figure 1, described bed die 2, be formed with the space for described epoxy resin flowing, described bed die 2 is provided with substrate orientation bar 21, again as shown in Figure 2, described substrate orientation bar 21 one end is provided with at least one pair of keeper 211 outwards diverged to, and leaves the space for arranging fixture 22 between described keeper 211, and described fixture 22 is for fixing described substrate; Wherein, described substrate back fixes with described fixture 22 upward.
Preferably, described epoxy resin is greater than the flow velocity in described substrate front side at the flow velocity of described substrate back, to make to be greater than applying pressure to described substrate front side to the applying pressure of described substrate back, thus suppress downwards and do not have resin flow, existing mold is transformed and changes splicing transfer member splicing mode, epoxy resin is flowed to change, guarantee stay in grade, thus in performance, reach the incomparable effect of similar products at home and abroad, because substrate needs reverse placement, need to transform sealed in unit transfer system, when guaranteeing that substrate number can be identified system identification, change splicing transfer member splicing mode, reach the effect of the reverse placement of substrate, in actual tests, by the reverse placement of substrate, the type of flow after change epoxy resin high temperature melting on substrate, increase epoxy resin to the pressure of chip surface, stabilize glue overflow capability in resin flows process, glue spilling is bad is reduced to 9PPM by 237PPM, achieves the stable operation of product.
As shown in Figure 3, preferably, described fixture 22 section shape comprises: parallel upper and lower straight line; Left side connects the arc limit of the evagination of described upper and lower straight line, and its arc limit can connect in described backstay 21; And right side connects described following straight line, described fixture width can be such as 2.3mm.
As shown in Figure 4, preferably, described mold 1 is provided with exhaust passage 11, and described exhaust passage 11 can have multiple, and width can be such as the left side edge that mold 1 is located in the exhaust passage 11 of 1.8mm or 1.5mm, 1.8mm.
In sum, a kind of semiconductor memory provided by the invention makes mould, and inner injection ring resene comprises: mold; Correspondence covers the bed die of described mold, be formed with the space for described epoxy resin flowing, described bed die is provided with substrate orientation bar, described substrate orientation bar one end is provided with at least one pair of keeper outwards diverged to, leave the space for arranging fixture between described keeper, described fixture is used for fixing described substrate; Wherein, described substrate back fixes with described fixture upward; Because the flow velocity of substrate back will, faster than front, make the pressure of substrate back be greater than front, thus suppress downwards and do not have resin flow.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (4)
1. semiconductor memory makes a mould, and inner injection ring resene is characterized in that, it is characterized in that, described mould comprises:
Mold;
Correspondence covers the bed die of described mold, be formed with the space for described epoxy resin flowing, described bed die is provided with substrate orientation bar, described substrate orientation bar one end is provided with at least one pair of keeper outwards diverged to, leave the space for arranging fixture between described keeper, described fixture is used for fixing described substrate; Wherein, described substrate back fixes with described fixture upward.
2. semiconductor memory according to claim 1 makes mould, it is characterized in that, described epoxy resin is greater than the flow velocity in described substrate front side at the flow velocity of described substrate back, to make to be greater than applying pressure to described substrate front side to the applying pressure of described substrate back.
3. semiconductor memory according to claim 1 makes mould, and it is characterized in that, described fixture section shape comprises: parallel upper and lower straight line; Left side connects the arc limit of the evagination of described upper and lower straight line; And right side connects described following straight line.
4. semiconductor memory according to claim 1 makes mould, and it is characterized in that, described mold is provided with exhaust passage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410286622.5A CN105225970B (en) | 2014-06-25 | 2014-06-25 | A kind of semiconductor memory making mold |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410286622.5A CN105225970B (en) | 2014-06-25 | 2014-06-25 | A kind of semiconductor memory making mold |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105225970A true CN105225970A (en) | 2016-01-06 |
| CN105225970B CN105225970B (en) | 2018-08-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410286622.5A Active CN105225970B (en) | 2014-06-25 | 2014-06-25 | A kind of semiconductor memory making mold |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1435900A (en) * | 2002-01-31 | 2003-08-13 | 三洋电机株式会社 | Method for mfg. lamination cell and lamination cell made thereby |
| US20070264756A1 (en) * | 2001-12-07 | 2007-11-15 | Yamaha Corporation | Method and apparatus for manufacture and inspection of semiconductor device |
| US20090142857A1 (en) * | 2007-11-29 | 2009-06-04 | Honeywell International Inc. | Package design of small diameter sensor |
| CN204118037U (en) * | 2014-06-25 | 2015-01-21 | 海太半导体（无锡）有限公司 | A kind of semiconductor memory makes mould |
-
2014
- 2014-06-25 CN CN201410286622.5A patent/CN105225970B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070264756A1 (en) * | 2001-12-07 | 2007-11-15 | Yamaha Corporation | Method and apparatus for manufacture and inspection of semiconductor device |
| CN1435900A (en) * | 2002-01-31 | 2003-08-13 | 三洋电机株式会社 | Method for mfg. lamination cell and lamination cell made thereby |
| US20090142857A1 (en) * | 2007-11-29 | 2009-06-04 | Honeywell International Inc. | Package design of small diameter sensor |
| CN204118037U (en) * | 2014-06-25 | 2015-01-21 | 海太半导体（无锡）有限公司 | A kind of semiconductor memory makes mould |
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| Publication number | Publication date |
|---|---|
| CN105225970B (en) | 2018-08-17 |
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