CN105225944A - A kind of metal level minimizing technology - Google Patents
A kind of metal level minimizing technology Download PDFInfo
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- CN105225944A CN105225944A CN201410250762.7A CN201410250762A CN105225944A CN 105225944 A CN105225944 A CN 105225944A CN 201410250762 A CN201410250762 A CN 201410250762A CN 105225944 A CN105225944 A CN 105225944A
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Abstract
The invention provides a kind of metal level minimizing technology.The invention belongs to semiconductor chip fabrication field.Described metal level minimizing technology, is applied to semiconductor chip, and described metal level comprises tungsten, titanium nitride and titanium layer, and wherein, described method comprises: soak described semiconductor chip with the concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.Described method solves that to remove the equipment cost of tungsten, titanium nitride and titanium layer with plasma etching high, auxiliary facility is more, inefficiency, the problem of complicated operation, by making chemically successively to remove the tungsten of semiconductor chip, titanium nitride and titanium layer, and do not damage the level of below, simple to operate, efficient, with low cost.
Description
Technical field
The present invention relates to semiconductor chip fabrication field, particularly a kind of metal level minimizing technology.
Background technology
Metal multiselect in semiconductor chip aluminum alloy materials (Al-Si-Cu alloy or alusil alloy, main component is aluminium), in order to problems such as reducing contact resistance, prevent that sial from dissolving each other, some products (as CMOS (complementary metal oxide semiconductors (CMOS)), DMOS (two expanded metal oxide semiconductor) etc.) usually below above-mentioned alloy with silicon oxide layer intersection successively titanium deposition and titanium nitride.And for CMOS product, the size in order to reduction holes selects tungsten to carry out filler opening sometimes, play a part to connect different circuit level.
The doing over again of product in chip manufacturing proces, metal level all can be removed in the urgent need to one by reverse engineering and Product Failure Analysis, and does not damage the method for underlying layers.At present, plasma etching or chemical method all can realize the removal of aluminium alloy layer in metal level.And the removal of tungsten, titanium nitride is a difficult point, reach the object of removal at present mainly through plasma etching, it is with high costs that the method also exists plasma etch apparatus, and auxiliary facility is more, inefficiency, the shortcoming of complicated operation.And traditional chemical method cannot reach and removes metal level and the silica level that do not damage below metal completely, and exist consuming time longer, remove the shortcomings such as not thorough.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of metal level minimizing technology, by making the metal level chemically successively removing semiconductor chip, and not damaging the level of below, having feature simple to operate, efficient, with low cost.
In order to solve the problems of the technologies described above, the embodiment of the present invention provides a kind of metal level minimizing technology, is applied to semiconductor chip, and described metal level comprises tungsten, titanium nitride and titanium layer, wherein, described method is specially: soak described semiconductor chip with the concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.
Further, the method for described removal tungsten, titanium nitride and titanium layer is specially: soak described semiconductor chip 2 to 3 minutes with the concentrated sulfuric acid that the mass concentration being heated to seethe with excitement is 97%.
Described metal level minimizing technology, wherein, described metal level also comprises aluminium alloy layer, and described method also comprises: remove aluminium alloy layer with semiconductor chip described in salt acid soak.
Further, the method for described removal aluminium alloy layer is specially: under normal temperature, semiconductor chip 5 to 10 minutes described in the salt acid soak being 36% by mass concentration.
Further, the metal level of next-door neighbour's semiconductor chip silicon dioxide layer is tungsten, titanium nitride and titanium layer, and the outermost layer of described tungsten, titanium nitride and titanium layer is aluminium alloy layer, and the minimizing technology of described metal level is:
With semiconductor chip described in salt acid soak, remove aluminium alloy layer; Then described semiconductor chip is soaked in concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.
Further, the metal level of next-door neighbour's semiconductor chip silicon dioxide layer is tungsten, titanium nitride and titanium layer, outside one deck of described tungsten, titanium nitride and titanium layer is aluminium alloy layer, and the outside of described aluminium alloy is also dispersed with tungsten, titanium nitride and titanium layer, and the minimizing technology of described metal level is:
Described semiconductor chip is soaked 2 to 3 minutes in concentrated sulfuric acid, removes tungsten, titanium nitride and titanium layer; After semiconductor chip cooling, semiconductor chip is soaked in hydrochloric acid and removes aluminium alloy layer; Finally described semiconductor chip is soaked in concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.
The beneficial effect of technique scheme of the present invention is as follows:
In such scheme, by making chemically, the metal level of semiconductor chip is removed in batches, and do not damage the level below metal level, use the method, can effectively metal level be removed, simple to operate, efficient, with low cost.
Accompanying drawing explanation
Fig. 1 is the metal level schematic diagram before the semiconductor chip metal level of the embodiment of the present invention is removed;
Fig. 2 is the schematic diagram after the semiconductor chip metal level of the embodiment of the present invention is removed.
Embodiment
For making the technical problem to be solved in the present invention, technical scheme and advantage clearly, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
The present invention is directed to existing plasma etching, to remove the equipment cost of tungsten, titanium nitride and titanium layer high, and auxiliary facility is more, inefficiency, the problem of complicated operation, provides a kind of metal level minimizing technology.
A kind of metal level minimizing technology provided by the invention, be applied to semiconductor chip, described metal level comprises tungsten, titanium nitride and titanium layer, and wherein, described method is specially: soak described semiconductor chip with the concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.
Further, the specific implementation process of described method is: soak described semiconductor chip 2 to 3 minutes with the concentrated sulfuric acid that the mass concentration being heated to seethe with excitement is 97%.
Said method is tungsten, titanium nitride and the titanium layer that when utilizing heating, the strong oxidizing property of the concentrated sulfuric acid removes semiconductor chip.
For common semiconductor chip, the metal level of chip also comprises aluminium alloy layer, therefore for metal level minimizing technology provided by the invention, wherein, described metal level also comprises aluminium alloy layer, and described method is specially: remove aluminium alloy layer with semiconductor chip described in salt acid soak.
Further, the specific implementation process of described method is: under normal temperature, semiconductor chip 5 to 10 minutes described in the salt acid soak being 36% by mass concentration.
Adopting said method can remove aluminium alloy layer in the metal level of semiconductor chip easily.
The implementation process of above method, has different processing sequences for different metal levels, illustrates below.
As shown in Figure 1, the metal level distribution sequence of described semiconductor chip is: the titanium 4 adjacent with silicon dioxide layer 5, titanium nitride 3 and be used for the tungsten layer 2 of filler opening, outermost is aluminium alloy layer 1, the removal order of this kind of metal level is: first at normal temperatures, be soak 5 to 10 minutes in the hydrochloric acid of 36% in mass concentration by semiconductor chip, remove aluminium alloy layer; Then by described semiconductor chip be heated to seethe with excitement mass concentration be in the concentrated sulfuric acid of 97% soak 2 to 3 minutes, utilize the concentrated sulfuric acid strong oxidizing property remove tungsten, titanium nitride and titanium layer.
As shown in Figure 2, removing the semiconductor chip of metal level, to be left silicon dioxide layer 5 outside exposed.
For some semi-conducting materials, may not use the tungsten for filler opening, now being distributed as of semiconductor chip metal level: next-door neighbour's silicon dioxide layer be titanium nitride and titanium layer, outermost layer is aluminium alloy layer, the removal order of this kind of metal level is: first at normal temperatures, be soak 5 to 10 minutes in the hydrochloric acid of 36% in mass concentration by semiconductor chip, remove aluminium alloy layer; Then be soak described semiconductor chip 2 to 3 minutes in the concentrated sulfuric acid of 97% in the mass concentration being heated to seethe with excitement, utilize the strong oxidizing property of the concentrated sulfuric acid to remove titanium nitride and titanium layer.
The distribution sequence of described semiconductor chip metal level can also be tungsten, titanium nitride and titanium layer for what be close to silicon dioxide layer, one deck is aluminium alloy layer above, tungsten, titanium nitride and titanium layer is also dispersed with above aluminium alloy layer, the metal level of this kind of semiconductor chip removal order be: by described semiconductor chip be heated to seethe with excitement mass concentration be in the concentrated sulfuric acid of 97% soak 2 to 3 minutes, utilize the concentrated sulfuric acid strong oxidizing property remove tungsten, titanium nitride and titanium layer; After semiconductor chip cooling, under normal temperature, be soak 5 to 10 minutes in the hydrochloric acid of 36% in mass concentration by semiconductor chip, remove aluminium alloy layer; Finally by described semiconductor chip be heated to seethe with excitement mass concentration be in the concentrated sulfuric acid of 97% soak 2 to 3 minutes, utilize the concentrated sulfuric acid strong oxidizing property remove tungsten, titanium nitride and titanium layer.
It should be noted that when the metal level distribution sequence of described semiconductor chip is different from such scheme, the scheme that all utilizations this kind of method removes metal level all belongs to protection scope of the present invention, does not enumerate at this.
Utilize said method, the metal level aggregated(particle) structure according to different product arranges described removal step, is not damaging on the basis of underlying layers, achieves the removal of the metal level to different metal level product, simple to operate, efficient, with low cost.
Above-described is the preferred embodiment of the present invention; should be understood that the ordinary person for the art; not departing under principle prerequisite of the present invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. a metal level minimizing technology, is applied to semiconductor chip, and described metal level comprises tungsten, titanium nitride and titanium layer, it is characterized in that, described method comprises: soak described semiconductor chip with the concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.
2. metal level minimizing technology according to claim 1, is characterized in that, the method for described removal tungsten, titanium nitride and titanium layer is specially: soak described semiconductor chip 2 to 3 minutes with the concentrated sulfuric acid that the mass concentration being heated to seethe with excitement is 97%.
3. metal level minimizing technology according to claim 2, is characterized in that, described metal level also comprises aluminium alloy layer, and described method also comprises: remove aluminium alloy layer with semiconductor chip described in salt acid soak.
4. metal level minimizing technology according to claim 3, is characterized in that, the method for described removal aluminium alloy layer is specially: under normal temperature, semiconductor chip 5 to 10 minutes described in the salt acid soak being 36% by mass concentration.
5. metal level minimizing technology according to claim 4, it is characterized in that, the metal level of next-door neighbour's semiconductor chip silicon dioxide layer is tungsten, titanium nitride and titanium layer, and the outermost layer of described tungsten, titanium nitride and titanium layer is aluminium alloy layer, and the minimizing technology of described metal level is:
With semiconductor chip described in salt acid soak, remove aluminium alloy layer; Then described semiconductor chip is soaked in concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.
6. metal level minimizing technology according to claim 4, it is characterized in that, the metal level of next-door neighbour's semiconductor chip silicon dioxide layer is tungsten, titanium nitride and titanium layer, outside one deck of described tungsten, titanium nitride and titanium layer is aluminium alloy layer, the outside of described aluminium alloy is also dispersed with tungsten, titanium nitride and titanium layer, and the minimizing technology of described metal level is:
Described semiconductor chip is soaked 2 to 3 minutes in concentrated sulfuric acid, removes tungsten, titanium nitride and titanium layer; After semiconductor chip cooling, semiconductor chip is soaked in hydrochloric acid and removes aluminium alloy layer; Finally described semiconductor chip is soaked in concentrated sulfuric acid and remove tungsten, titanium nitride and titanium layer.
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| CN201410250762.7A CN105225944A (en) | 2014-06-06 | 2014-06-06 | A kind of metal level minimizing technology |
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| CN201410250762.7A CN105225944A (en) | 2014-06-06 | 2014-06-06 | A kind of metal level minimizing technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108277349A (en) * | 2018-02-01 | 2018-07-13 | 燕山大学 | A kind of selective reaction separation of titanium aluminium laminar composite and recovery method |
| CN109266854A (en) * | 2017-07-17 | 2019-01-25 | 宁波创润新材料有限公司 | Sputtering target material recovery method |
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| CN108277349A (en) * | 2018-02-01 | 2018-07-13 | 燕山大学 | A kind of selective reaction separation of titanium aluminium laminar composite and recovery method |
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Application publication date: 20160106 |