CN109266854A - Sputtering target material recovery method - Google Patents
Sputtering target material recovery method Download PDFInfo
- Publication number
- CN109266854A CN109266854A CN201710580344.8A CN201710580344A CN109266854A CN 109266854 A CN109266854 A CN 109266854A CN 201710580344 A CN201710580344 A CN 201710580344A CN 109266854 A CN109266854 A CN 109266854A
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- CN
- China
- Prior art keywords
- backboard
- target
- target material
- recovery method
- material recovery
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Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
- C22B7/006—Wet processes
- C22B7/008—Wet processes by an alkaline or ammoniacal leaching
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
- C22B34/1236—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining titanium or titanium compounds from ores or scrap by wet processes, e.g. by leaching
- C22B34/124—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining titanium or titanium compounds from ores or scrap by wet processes, e.g. by leaching using acidic solutions or liquors
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
- C22B34/1236—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining titanium or titanium compounds from ores or scrap by wet processes, e.g. by leaching
- C22B34/1254—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining titanium or titanium compounds from ores or scrap by wet processes, e.g. by leaching using basic solutions or liquors
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
- C22B7/006—Wet processes
- C22B7/007—Wet processes by acid leaching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
A kind of sputtering target material recovery method, comprising: provide target material assembly, the target material assembly includes backboard and the target that connect with the backboard；The backboard and target are separated using chemical reaction separation method.The chemical reaction separation method compared to mechanical separation method, the backboard and target can be separated more thoroughly, to can get the target of high-purity.
Description
Technical field
The present invention relates to field of semiconductor fabrication more particularly to a kind of sputtering target material recovery methods.
Background technique
Sputter coating is belonged to physical gas-phase deposite method and prepares one of technique of film, in particular to banged using high energy particle
Target material surface is hit, so that target atom or molecule obtain enough energy evolutions, and substrate or workpiece surface are deposited on, thus shape
At film.
Since backboard (such as aluminium) has good electrical and thermal conductivity performance, and fixed supporting role, therefore, target can also be played
Material need to weld together with backboard, constitute target material assembly, be assembled to sputtering base jointly and carry out plated film.
Target material assembly has biggish loss after a period of time use, influences normal use, thus needs replacing new
Target material assembly.Since the cost of manufacture of the target (such as high purity titanium, High-purity Tantalum) in old target material assembly is higher, thus need back
It receives.The recovery method of target mostly uses mechanically decoupled method at present, by applying the torsion of opposite direction to backboard and target,
Realize the separation of target and backboard.
Using existing sputtering target material recovery method, still there is the back veneer material of portion of residual on the target of acquisition, influence target
Recycling.
Summary of the invention
Problems solved by the invention is to use existing sputtering target material recovery method, still has portion of residual on the target of acquisition
Back veneer material influences the recycling of target.
To solve the above problems, the present invention provides a kind of sputtering target material recovery method, comprising: target material assembly is provided, it is described
Target material assembly includes backboard and the target that connect with the backboard；The backboard and target are separated using chemical reaction separation method
Material.
Optionally, the chemical reaction separation method includes: offer aqueous slkali, and the target material assembly is dipped to the alkali
In solution, the target is taken out after backboard dissolution.
Optionally, the aqueous slkali is that sodium hydroxide solution, potassium hydroxide solution, barium hydroxide solution or cesium hydroxide are molten
Liquid.
Optionally, the concentration of the aqueous slkali is 5%~30%.
Optionally, the sputtering target material recovery method further include: acid solution is provided and is rushed after taking out the target with pure water
The target is washed, then impregnates the target acid solution.
Optionally, the acid solution is hydrochloric acid, sulfuric acid, nitric acid, hydrobromic acid or hydroiodic acid.
Optionally, the concentration of the acid solution is 5%~20%.
Optionally, the sputtering target material recovery method further include: strong oxidizer is provided, in the acid solution described in addition
Strong oxidizer.
Optionally, the strong oxidizer is hydrogen peroxide.
Optionally, the target is titanium target or included a tantalum target.
Optionally, the backboard is amphoteric metal.
Optionally, the backboard is aluminium backboard, gallium backboard, zinc backboard, germanium backboard, indium backboard, tin backboard or lead backboard.
Compared with prior art, technical solution of the present invention has the advantage that
The backboard and target are separated using chemical reaction separation method, because the backboard is as one of reactant, meeting
Always involved in chemical reaction until reacting away completely, and the target is from start to finish not involved in chemical reaction, so can be by institute
State backboard and target separation more thoroughly, thus can get high-purity target.
Further, the aqueous slkali is sodium hydroxide, potassium hydroxide, barium hydroxide or cesium hydroxide solution, due to described
Aqueous slkali belongs to highly basic, therefore stronger with the reactivity of the backboard.
Further, the concentration of the aqueous slkali is lower, is 5%~30%, anti-to avoid the target and the aqueous slkali
It answers.
Further, the acid solution is hydrochloric acid, sulfuric acid, nitric acid, hydrobromic acid or hydroiodic acid, and the acid solution belongs to strong acid,
The foreign matter that the target contains can be effectively dissolved, back veneer material, undissolved reaction product, metal including remaining are miscellaneous
Matter, to improve the purity of the target.
Further, the concentration of the acid solution is lower, is 5%~20%, to prevent the acid solution from corroding the target.
Further, strong oxidizer is added in the acid solution, since the strong oxidizer can be enhanced in acidic environment
Oxidisability, thus metal impurities are easier to be oxidized to metal ion, and then are detached from the target and are transferred to the acid solution
In.
Detailed description of the invention
Fig. 1 is target material assembly structural schematic diagram disclosed by the embodiments of the present invention；
Fig. 2 is that the embodiment of the present invention discloses the schematic diagram being dipped to target material assembly in aqueous slkali；
Fig. 3 is that the embodiment of the present invention discloses the schematic diagram being dipped to target in acid solution.
Specific embodiment
Existing sputtering target material recovery method separates the backboard and target, the obtained target using mechanical separation method
Often contain a certain amount of back veneer material, reason is on the one hand are as follows: the backboard and target are connected firmly, and cause the target table
There are back veneer materials in face；On the other hand are as follows: there are phase interdiffusion phenomenons between the backboard and the contact surface of the target, so that institute
It states and is diffused with a small amount of back veneer material inside target.
Inventor solves existing technical problem, and by creative labor, discovery is using chemical reaction separation method
Separate the backboard and target, compared to mechanical separation method, be not only able to separate the backboard and target more thoroughly,
And it there will be no remaining back veneer material on the target.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Referring to Fig.1, target material assembly 100 is provided, the target material assembly 100 includes backboard 10 and connect with the backboard 10
Target 20.
In the present embodiment, the target 20 is plate-like, and bottom surface is round, rectangle or irregular shape, material are titanium
Or tantalum metal；The backboard 10 is amphoteric metal, and material is aluminium, gallium, zinc, germanium, indium, tin or lead.The bottom surface of the target 20 with
The plate face of the backboard 10 welds together.
Referring to Fig. 2, Fig. 3, the backboard 10 and target 20 are separated using chemical reaction separation method.
In the present embodiment, the chemical reaction separation method includes: to provide aqueous slkali 30, and the target material assembly 100 is soaked
Bubble takes out the target 20 after the backboard 10 dissolution into the aqueous slkali 30.
In the present embodiment, the aqueous slkali 30 is strong base solution, specially sodium hydroxide solution, potassium hydroxide solution, hydrogen
Barium oxide solution or cesium hydroxide solution, mass concentration are 5%~30%.On the one hand, the target 20 be titanium target or included a tantalum target, by
It is lower in the mass concentration of the aqueous slkali 30, thus titanium and tantalum metal are not reacted with the aqueous slkali 30；On the other hand,
The backboard 10 is amphoteric metal, can be reacted with the aqueous slkali 30, and reactivity is stronger.The matter of the aqueous slkali 30
Measure excessive concentration, it is possible to react with the target 20；The mass concentration of the aqueous slkali 30 is too low, anti-with the backboard 10
Answer rate extremely slow.The aqueous slkali 30 in some instances, is in room temperature, but be not limited to room temperature, can in other examples
The aqueous slkali 30 is heated, temperature controls within 100 DEG C, can further improve the backboard 10 and the aqueous slkali
30 reaction rate.
In the present embodiment, the target material assembly 100 is dipped in the aqueous slkali 30, the backboard 10 is in the alkali soluble
It can gradually be eroded in liquid 30, to leave the target 20, realize the separation of the backboard 10 and the target 20.
In the present embodiment, by taking the backboard 10 is aluminium backboard, the aqueous slkali 30 is sodium hydroxide solution as an example, the aluminium
The chemical reaction of backboard and sodium hydroxide solution is divided into two steps:
Step 1:
2Al+6H2O=2Al (OH)3+3H2↑
Step 2:
2Al(OH)3+ 2NaOH=2Na [Al (OH)4]
Total chemical equation are as follows:
2Al+2NaOH+6H2O=2Na [Al (OH)4]+3H2↑
In the present embodiment, the aqueous slkali 30 provided needs enough.With the backboard 10 for aluminium backboard, the aqueous slkali 30
For sodium hydroxide solution, in the insufficient amount of situation of sodium hydroxide solution, the product aluminium hydroxide of intermediate link is reacted
Particle can be attached to the surface of the target 20, and the purity of the target 20 obtained after reaction is lower.
The chemical reaction separation method further include: acid solution 40 is provided, after taking out the target 20, with pure water rinsing institute
Target 20 is stated, then impregnates the target 20 acid solution 40.
In the present embodiment, the acid solution 40 is enough hydrochloric acid, sulfuric acid, nitric acid, hydrobromic acid or hydroiodic acid, and the acid is molten
The mass concentration of liquid 40 is 5%~20%.Since the mass concentration of the acid solution 40 is lower, thus titanium and tantalum metal are not
It is reacted with the acid solution 40, the target 20 acid solution 40 is impregnated, purpose removes the target 20 and contains
Foreign matter, to obtain the titanium target or included a tantalum target of high-purity.The mass concentration of the acid solution 40 is excessively high, it is possible to corrode the target
20, the mass concentration of the acid solution 40 is too low, cannot effectively dissolve the foreign matter.The acid solution 40 is in some examples
In, it is in room temperature, but be not limited to room temperature, in other examples, the acid solution 40 can be heated, further to mention
The reaction rate of the high acid solution 40 and the foreign matter.
In the present embodiment, it not can guarantee the backboard 10 and be dissolved completely in the aqueous slkali 30, i.e., on the described target 20
It is possible that being attached with the backboard 10 of remaining, one of the source of the foreign matter is constituted.The backboard 10 is amphoteric metal, can
It is dissolved in the acid solution 40, thus the acid solution 40 can further dissolve the backboard 10 of remaining, the backboard 10 is complete
Clear all.
In the present embodiment, when the backboard 10 is aluminium backboard, the acid solution 40 is dilute sulfuric acid, the aluminium backboard and sulphur
The chemical equation of acid are as follows:
2Al+3H2SO4=Al2(SO4)3+3H2↑
In the present embodiment, the reaction product of the backboard 10 and the aqueous slkali 30 is possible to undissolved in the alkali soluble
In liquid 30, and it is attached to the surface of the target 20 in the form of granules, constitutes one of the source of the foreign matter.Due to described anti-
It answers product in alkalinity, therefore can be reacted with the acid solution 40, i.e., removed by the acid solution 40.
In the present embodiment, by taking the reaction product is sodium metaaluminate, the acid solution 40 is hydrochloric acid as an example, sodium metaaluminate
The chemical equation reacted with hydrochloric acid are as follows:
Na[Al(OH)4]+4HCl=AlCl3+NaCl+4H2O
In the present embodiment, it is possible on the target 20 with metal impurities.For example, weld the target 20 with it is described
When backboard 10, to guarantee the uniform of Solder Spread, and save the dosage of solder, usual way be the target 20 with it is described
Wire is placed between backboard 10, the wire is copper wire or iron wire.The wire is not reacted with the aqueous slkali 30, thus
The wire constitutes one of the source of the foreign matter possible as metal impurities.The acid solution 40 can dissolve institute
The metal impurities on target 20 are stated, by taking the metal impurities are copper, the acid solution 40 is dust technology as an example, the change of copper and nitric acid
Learn reaction equation are as follows:
3Cu+8HNO3=3Cu (NO3)2+2NO↑+4H2O
The chemical reaction separation method further include: strong oxidizer is provided, the strong oxygen is added in the acid solution 40
Agent.
In the present embodiment, the strong oxidizer is hydrogen peroxide.In acid condition, the oxidisability of hydrogen peroxide can increase
By force, therefore the metal impurities are easier to be oxidized to metal ion, and then are detached from the target 20 and to be transferred to the acid molten
In liquid 40.When the metal impurities are copper, and the acid solution 40 is hydrochloric acid, copper reacts slowly with dilute hydrochloric acid, but is added a small amount of
Reaction rate is accelerated after hydrogen peroxide, chemical equation are as follows:
2H2O2+ Cu+2HCl=CuCl2+2H2O
In the present embodiment, before the target 20 is impregnated with the acid solution 40, target 20 described in pure water rinsing,
To rinse out the aqueous slkali 30 on 20 surface of target, to reduce the dosage of the subsequent acid solution 40.
In the present embodiment, after the target 20 impregnates enough time with the acid solution 40, by the target 20 from described
Acid solution 40 takes out, using pure water rinsing, by the target 20 acid solution 40 and metal compound solution rinse out, through drying
The target 20 of high-purity is obtained after dry.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of sputtering target material recovery method characterized by comprising
Target material assembly is provided, the target material assembly includes backboard and the target that connect with the backboard；
The backboard and target are separated using chemical reaction separation method.
2. sputtering target material recovery method as described in claim 1, it is characterised in that: the chemical reaction separation method includes:
Aqueous slkali is provided, the target material assembly is dipped in the aqueous slkali, takes out the target after backboard dissolution.
3. sputtering target material recovery method as claimed in claim 2, which is characterized in that the aqueous slkali be sodium hydroxide solution,
Potassium hydroxide solution, barium hydroxide solution or cesium hydroxide solution.
4. sputtering target material recovery method as claimed in claim 2, which is characterized in that the concentration of the aqueous slkali be 5%~
30%.
5. sputtering target material recovery method as claimed in claim 2, which is characterized in that further include: acid solution is provided, described in taking-up
After target, then the target described in pure water rinsing impregnates the target acid solution.
6. sputtering target material recovery method as claimed in claim 5, which is characterized in that the acid solution is hydrochloric acid, sulfuric acid, nitre
Acid, hydrobromic acid or hydroiodic acid.
7. sputtering target material recovery method as claimed in claim 5, which is characterized in that the concentration of the acid solution be 5%~
20%.
8. sputtering target material recovery method as claimed in claim 5, which is characterized in that further include: strong oxidizer is provided, described
The strong oxidizer is added in acid solution.
9. sputtering target material recovery method as claimed in claim 8, which is characterized in that the strong oxidizer is hydrogen peroxide.
10. sputtering target material recovery method as described in any one of claim 1 to 9, which is characterized in that the target is titanium target or tantalum
Target.
11. sputtering target material recovery method as described in any one of claim 1 to 9, which is characterized in that the backboard is both sexes gold
Belong to.
12. sputtering target material recovery method as claimed in claim 11, which is characterized in that the backboard be aluminium backboard, gallium backboard,
Zinc backboard, germanium backboard, indium backboard, tin backboard or lead backboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710580344.8A CN109266854A (en) | 2017-07-17 | 2017-07-17 | Sputtering target material recovery method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710580344.8A CN109266854A (en) | 2017-07-17 | 2017-07-17 | Sputtering target material recovery method |
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| CN109266854A true CN109266854A (en) | 2019-01-25 |
Family
ID=65152543
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| CN201710580344.8A Pending CN109266854A (en) | 2017-07-17 | 2017-07-17 | Sputtering target material recovery method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109930162A (en) * | 2019-04-22 | 2019-06-25 | 宁波锦越新材料有限公司 | A kind of cleaning method recycling sputtering target material |
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