CN106334686A - Cleaning method of target material composite - Google Patents
Cleaning method of target material composite Download PDFInfo
- Publication number
- CN106334686A CN106334686A CN201510401642.7A CN201510401642A CN106334686A CN 106334686 A CN106334686 A CN 106334686A CN 201510401642 A CN201510401642 A CN 201510401642A CN 106334686 A CN106334686 A CN 106334686A
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- Prior art keywords
- target
- backboard
- combination
- cleaning
- cleaning treatment
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools, brushes, or analogous members
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention relates to a cleaning method of a target material composite. The cleaning method of the target material composite comprises the steps of providing a sputtered target material composite, wherein the target material composite comprises a residual target material and a back plate, a welding face of the residual target material is welded with a central area of the front face of the back plate, a surrounding area of the front face of the back plate is exposed outside, and aluminum oxide is attached to the surrounding area of the front face of the back plate and side faces during a sputtering process; carrying out first cleaning processing on the back plate, wherein the first cleaning processing includes adopting a sodium hydroxide solution to clean the surrounding area of the front face of the back plate and the side faces of the back plate; after completing the first cleaning processing, carrying out second cleaning processing on the target material composite, wherein the second cleaning processing includes washing the target material composite. According to the cleaning method, the back plate of the target material composite can be fully cleaned, so that the back plate can meet the requirement of a follow-up sand-blasting technology.
Description
Technical field
The present invention relates to sputtering target material manufactures field, more particularly, to a kind of cleaning method of target combination.
Background technology
In recent years, semiconductor technology develops rapidly, with the miniaturization of semiconductor device, miniaturization, right
It is formed at the size of plated film on semiconductor chip, quality etc. and require also more and more higher.It is known that
In currently used various film plating process, because film forming mechanism is different, sputter coating is than other plated films
More preferably, for example, the plated film that sputter coating is formed is more uniformly distributed effect, and intensity is big and function admirable.With
Other film plating process are compared, and sputter coating requires also non-to the cleannes of raw material (i.e. target and backboard)
Chang Gao.
But, the backboard of sputtering target material combination typically requires reuse, to economize on resources and to reduce into
This.Due to the requirement of cleannes, before reuse, need substantially entirely backboard to be carried out.
Therefore, in order to ensure backboard, there are enough cleannes, how to be carried out into using backboard later
For industry major issue urgently to be resolved hurrily.
Nowadays, liquid crystal display (liquid crystal display, lcd) technology has been widely applied to give birth to
In work.For the reduces cost that economizes on resources, (combination of lcd target is used for lcd to the combination of lcd target
Produce sputtering technology target combination) in backboard be generally also required to repeatedly reuse.In order to again make
With the backboard of lcd target combination, need the backboard of lcd target combination is fully cleaned.
Content of the invention
The problem that the present invention solves is to provide a kind of cleaning method of target combination, with the back of the body that target is combined
Plate is fully cleaned so that backboard meets the requirement of follow-up blasting craft.
For solving the above problems, the present invention provides a kind of cleaning method of target combination, comprising:
There is provided the target combination after sputtering, described target combination includes remaining target and backboard, described residual
The solder side of target is welded together with the middle section in described backboard front, the periphery in described backboard front
Region exposes outside, and the neighboring area in described backboard front and side are attached with aluminium oxide in sputter procedure；
Described backboard is carried out with the first cleaning treatment, described first cleaning treatment includes molten using sodium hydroxide
Liquid cleans the neighboring area in described backboard front and described backboard side；
After described first cleaning treatment, described target is combined and carries out the second cleaning treatment, described second
Cleaning treatment includes the combination of described target is rinsed.
Optionally, the mass concentration scope of described sodium hydroxide solution is 25%～50%.
Optionally, described first cleaning treatment includes: described sodium hydroxide solution is sucked in syringe, profit
With described syringe, described sodium hydroxide solution is uniformly coated on the neighboring area in described backboard front and described
Backboard side.
Optionally, by after described sodium hydroxide solution even spread, keep 8min～15min, then carry out institute
State the second cleaning treatment.
Optionally, after being coated with described sodium hydroxide solution, and before carrying out described second cleaning treatment,
Also include: shovel is carried out to the aluminium oxide remaining attached to described backboard using perching knife and scrapes process；Described
Before two cleaning treatment, shovel the neighboring area in described backboard front and described backboard side using metal tools
Face, to confirm whether described aluminium oxide is completely removed.
Optionally, after described second cleaning treatment, be at least repeated once described first cleaning treatment and
The process of described second cleaning treatment.
Optionally, during described first cleaning treatment, the combination of described target is vacantly erected at dress water
On tank.
Optionally, during described second cleaning treatment, the combination of described target is vacantly erected at dress water
On tank.
Optionally, the material of described residual target is aluminum or aluminium alloy, the material of described backboard be copper or
Person's copper alloy.
Optionally, described backboard be shaped as rectangular tabular.
Compared with prior art, technical scheme has the advantage that
In technical scheme, first provide the target combination after sputtering, described target combination includes residual
Stay target and backboard, the solder side of described residual target is welded on one with the middle section in described backboard front
Rise, the neighboring area in described backboard front exposes outside, and the neighboring area in described backboard front and side exist
It is attached with aluminium oxide in sputter procedure；Described backboard is carried out with the first cleaning treatment, at described first cleaning
Reason includes cleaning the neighboring area in described backboard front and described backboard side using sodium hydroxide solution；?
After described first cleaning treatment, the second cleaning treatment is carried out to the combination of described target, at described second cleaning
Reason includes the combination of described target is rinsed.First cleaning treatment of methods described can be anti-with aluminium oxide
Should, so that partial oxidation aluminum is dissolved, other parts aluminium oxide is peeled off or come off, or it is little for squamous to ftracture
Block, in the second cleaning treatment, can be using water impact effect when rinsing, the oxygen that will be dissolved
Change aluminum to wash off, and be capable of the sodium hydroxide solution of wash and remove residual, so that backboard is just simultaneously
The aluminium oxide of the neighboring area in face and backboard side is thoroughly removed, for subsequently spraying to these regions
Sand provides cleaning to ensure.So that it is guaranteed that being not in the bad situation of sandblasting effect.Improve the weight of backboard
Multiple serviceability, and reduce the man-hour of personnel's consuming, reduce the consume of backboard, improve the use of backboard
Life-span.
Further, the mass concentration scope of described sodium hydroxide solution is 25%～50%.On the one hand, if
The mass concentration of described sodium hydroxide solution is too low, and when less than less than 25%, generally corresponding solution is no
There is required chemical reaction with the aluminium oxide of attachment in method, chemical reaction rate now is relatively low.Therefore,
Good cleaning action now cannot be played.On the other hand, if the quality of described sodium hydroxide solution is dense
Degree is too big, be greater than when 50% it is equally possible to lead to chemical reaction rate to reduce, be more importantly,
When the mass concentration of described sodium hydroxide solution is more than 50%, produce after described first cleaning treatment cleaning
Waste liquid in, corresponding chemical concentrations higher it is impossible to reach corresponding blowdown mark, can be to water source
Environment damages.Therefore, the mass concentration of described sodium hydroxide solution is controlled 25%～50%.
Brief description
Fig. 1 is the target combination schematic perspective view that the embodiment of the present invention is provided；
Fig. 2 is the side schematic view of the combination of target shown in Fig. 1；
Fig. 3 is the schematic diagram being vacantly erected at the combination of target shown in Fig. 2 on the tank of dress water.
Specific embodiment
The back plate surface of the lcd target combination after sputtering generally carries the attachment object being difficult to remove.In order to
Remove these attachments completely, existing method generally passes through polishing grinding.There is many deficiencies in this method:
Firstth, the activity duration is long, especially for the bulk article of volume production, consumes substantial amounts of time and manpower；
Second, the long-term polishing grinding that repeats is destructive strong to the back plate surface that lcd target combines, and consumes lcd
The back veneer material of target combination, produces harmful effect to follow-up blasting treatment further process time, and
Follow-up blasting treatment process time also can be extended, increased process costs.
Before blasting treatment processing, need backboard is fully cleaned.This is because, blasting treatment is processed
It is in order that the respective surfaces roughness of backboard increases, for adsorbing corresponding backwash in sputter procedure
Penetrate thing, in order to increase the absorbability to reverse sputtering thing for the backboard, needs ensure clean on sandblasting pronotum surface
Only.But, the back plate surface of lcd target combination is generally attached with more aluminium oxide, usually one layer
Alumina build-up nitride layer.Existing method cannot remove these aluminium oxidies well.The presence of these aluminium oxidies
When can lead to blasting treatment, the surface of relevant position does not reach corresponding roughness, thus leading to again add
Backboard after work cannot adsorb the reverse sputtering thing in sputter procedure well to be marked it is impossible to meet using of client
Accurate.
For this reason, the present invention provides a kind of cleaning method of new target combination, by entering to described backboard
Row first cleaning treatment and the second cleaning treatment, reach the abundant purpose cleaning backboard.Described first cleaning
Process and include cleaning the neighboring area in described backboard front and described backboard side using sodium hydroxide solution,
Described second cleaning treatment includes the combination of described target is rinsed.
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
The embodiment of the present invention provides a kind of cleaning method of target combination, including step s1 to step s3.
Step s1, provides the target after sputtering to combine, incorporated by reference to reference to Fig. 1 and Fig. 2.Fig. 1 is target
The schematic perspective view of combination.The side schematic view that Fig. 2 combines for target.
In the present embodiment, target combination 100 includes remaining target 120 and backboard 110.In the present embodiment,
Target combination 100 is the combination of lcd target.In other embodiments, target combination may not be lcd
Target combines.
In the present embodiment, the material of described residual target 120 is aluminum or aluminium alloy, described backboard 110
Material be copper or copper alloy.
The solder side of described residual target 120 is welded together with the middle section in described backboard 110 front.
Described backboard 110 be shaped as rectangular tabular.The neighboring area in described backboard 110 front exposes outside,
In Fig. 1 and Fig. 2, the neighboring area that backboard 110 is exposed outside be labeled as surface 111 that is to say, that
The front of backboard 110 includes two parts, and Part I is welded with the solder side of described residual target 120
Together, another part is surface 111.Additionally, backboard 110 also includes leading flank 114, left surface 112,
Right flank 113, trailing flank 115, and the back side 116.
In the present embodiment, the neighboring area in described backboard 110 front and side are attached with sputter procedure
Aluminium oxide, i.e. surface 111, leading flank 114, left surface 112, right flank 113 and trailing flank 115 meeting
It is attached with aluminium oxide in sputter procedure.The generation of described aluminium oxide is main to be may be from sputter procedure
Described in the sputtering particle that produces of target, but be also possible to come from the particle that other compositions produce.This reality
The cleaning method applying example offer is exactly to above-mentioned surface 111, leading flank 114, left surface 112, right flank
113 and the cleaning method of trailing flank 115, mainly remove the aluminium oxide on these surfaces, thus after ensureing
The carrying out of continuous blasting craft.
In the present embodiment, described backboard 110 be shaped as rectangular tabular.Specifically, described backboard 110
Frontage dimension can be 2650mm × 210mm, the area of as 6 generation line 10 Splittable.The described back of the body
Plate 110 can also be 8 generation line 12 Splittable, and its frontage dimension can be 3000mm × 230mm.
The backboard 110 of this rectangular tabular, in (magnetic control) sputter procedure, generally produces oxygen on above-mentioned each surface
Change the attachment of aluminum.Although this attachment also can produce in common circular target, lcd target
Material combination because of special processing technology, and area larger it will usually produce the attachment of greater amount,
Attachment is more difficult to remove, thus the reuse combining dorsulum 110 to lcd target brings great being stranded
Disturb.For this reason, the present embodiment passes through subsequent method step, to solve this puzzlement.
Step s2, carries out the first cleaning treatment to described backboard 110, and described first cleaning treatment includes adopting
Clean neighboring area and described backboard 110 side in described backboard 110 front with sodium hydroxide solution.
In the present embodiment, the mass concentration scope of described sodium hydroxide solution is 25%～50%.Control described
The first cleaning treatment important in inhibiting to described backboard 110 for the mass concentration of sodium hydroxide solution.This
Embodiment uses sodium hydroxide solution can to reach and make oxidation reactive aluminum with the principles of chemistry of oxidation reactive aluminum
Dissolving, and peel off from the division of backboard 110 each surface, thus reaching the mesh removing Alumina build-up thing
's.Therefore, on the one hand, if the mass concentration of described sodium hydroxide solution is too low, when less than 25% with
When lower, generally corresponding solution cannot occur required chemical reaction with the aluminium oxide of attachment, change now
Learn reaction rate relatively low.Therefore, good cleaning action cannot now be played.On the other hand, if institute
The mass concentration stating sodium hydroxide solution is too big, is greater than when 50% it is equally possible to lead to chemical reaction
Rate reduction, be more importantly, when the mass concentration of described sodium hydroxide solution is more than 50%, institute
In the waste liquid producing after stating the first cleaning treatment cleaning, the higher (chemical ion of corresponding chemical concentrations
Concentration is higher) it is impossible to reach corresponding blowdown mark, water source environment can be damaged.Accordingly, it would be desirable to
The mass concentration of described sodium hydroxide solution is controlled 25%～50%.
In the present embodiment, described first cleaning treatment includes: described sodium hydroxide solution is sucked in syringe,
Using described syringe, described sodium hydroxide solution is uniformly coated on the neighboring area in described backboard 110 front
With described backboard 110 side.Joining to obtain composition uniformly after corresponding sodium hydroxide solution, it is possible to use
Solution is sucked wherein by syringe, then slowly pushes corresponding solution again and flows out from needle point, and utilizes needle point
Uniform application is in the respective surfaces of backboard 110.Sodium hydroxide can be saved in a large number in this way molten
Liquid, and prevent in use, the gas reaction such as carbon dioxide of sodium hydroxide solution and in the air
And affect the quality of solution.Meanwhile, sodium hydroxide can also be prevented in this way to be stained with operator
Body, preferably protects the safety of personnel.
Refer to Fig. 3, Fig. 3 is the signal being vacantly erected at the combination of target shown in Fig. 2 on the tank of dress water
Figure.In the present embodiment, during described first cleaning treatment, target combination 100 is vacantly erected at
On the tank 200 of dress water.That is, carry out above-mentioned smear sodium hydroxide solution with needle point before,
First target combination 100 is vacantly erected on tank 200, then smears described sodium hydroxide solution again.
Due in tank 200 equipped with water, therefore, the unnecessary hydroxide of coating during described first cleaning treatment
Sodium solution during landing, can be dropped in tank 200 from backboard 110, thus being diluted, and is dropped in
The sodium hydroxide solution of tank 200 can be diluted by water, is easy to post processing and discharge.
Specifically, target combination 100 can be vacantly erected at dress by three pillars 300 by the present embodiment
On the tank 200 of water.It is also possible to make target combination 100 hanging by other methods in other embodiments
It is erected on the tank 200 of dress water.
Step s3, after described first cleaning treatment, carries out the second cleaning treatment to target combination 100,
Described second cleaning treatment includes target combination 100 is rinsed.
In the present embodiment, after described sodium hydroxide solution even spread, keep 8min～15min, then enter
Described second cleaning treatment of row.It has been mentioned hereinbefore that sodium hydroxide solution is to be removed using chemical reaction
Alumina build-up thing, accordingly, it would be desirable to ensure suitable response time with ensure aluminium oxide and be dissolved or from
Split away off on backboard 110.Typically more suitable response time can control in 10min, sends out
A person of good sense passes through test of many times and adjustment under room temperature state, and the hydroxide with the use of variable concentrations
Sodium solution, especially selects in 8min～15min, in the range of this time, can either ensure that aluminium oxide is gone
Except clean, ensure that process efficiency again.
After being coated with described sodium hydroxide solution, and before carrying out described second cleaning treatment, the present embodiment
Also include: first shovel is carried out to the aluminium oxide remaining attached to described backboard 110 using perching knife and scrape process.?
After above-mentioned first cleaning treatment process, even if aluminium oxide is not dissolved, also generally it is reacted into each and separates
Squamous cracking fritter, some directly peel off.Now, using perching knife to remaining attached to
The aluminium oxide stating backboard 110 carries out shovel and scrapes process, these can not peeled off the squamous cracking fritter in place
Fallen by artificial shovel, thus being conducive to the flushing process of follow-up second cleaning treatment to rinse whole aluminium oxidies
Totally.Scraped by this shovel and process additionally it is possible to save the usage amount of sodium hydroxide solution further, and save
Save the process time, improve process efficiency.
In the present embodiment, during described second cleaning treatment, by the percussion of current when rinsing,
Can make originally to have separated with backboard but not fall off the squama block aluminium oxide getting off and be rinsed removal, and make
The sodium hydroxide solution of residual is also rinsed totally simultaneously, the target combination 100 after fully being cleaned.
In the present embodiment, during described second cleaning treatment, target combination 100 is vacantly erected at dress
On the tank 200 of water.When described first cleaning treatment is carried out on the tank 200 filling water, Ke Yizhi
Connect and proceed described second cleaning treatment without mobile target combination 100.Carrying target now can be saved
The process of material combination 100.And, the waste liquid after described second cleaning treatment is rinsed also enters directly into water
In groove 200, such that it is able to by being discharged into after tank 200 in for example corresponding liquid waste processing pond.
The cleaning method of the target combination being provided by the present embodiment, can make in target combination, backboard
The aluminium oxide of the neighboring area in 110 fronts and backboard 110 side is thoroughly removed, thus for follow-up to this
When a little regions carry out sandblasting, be not in the bad situation of sandblasting effect, improve the repetition of backboard 110
Serviceability, and reduce the man-hour of personnel's consuming, reduce the consume of backboard 110, improve backboard 110
Service life.
It should be noted that in the present embodiment, after above-mentioned cleaning method, subsequently just will remain
Target 120 is separated with backboard 110.
Another embodiment of the present invention provides a kind of cleaning method of target combination, including step s1 to step
s5.Having step in the present embodiment and previous embodiment something in common, something in common refers to aforementioned reality more
Apply a corresponding contents, and can be in conjunction with referring to figs. 1 to Fig. 3.
Step s1, provides the target after sputtering to combine, and described target combination includes remaining target and backboard,
The solder side of described residual target is welded together with the middle section in described backboard front, and described backboard is just
The neighboring area in face exposes outside, and the neighboring area in described backboard front and side are adhered in sputter procedure
There is aluminium oxide.
Step s2, carries out primary first cleaning treatment, described first cleaning treatment bag to described backboard
Include and the neighboring area in described backboard front and described backboard side are cleaned using sodium hydroxide solution.
In the present embodiment, the hydroxide that the preparation of sodium hydroxide solution can be is more than 96% using purity
Sodium solid is mixed with water to be carried out.Specifically, the described sodium hydrate solid and 75 with 25g can be selected
The water of milliliter is sufficiently mixed, to form corresponding sodium hydroxide solution, for being sent out with aluminium sesquioxide
Biochemical reaction, that is, be used for removing the alumina impurities of backboard respective surfaces.
In the present embodiment, described first cleaning treatment includes: described sodium hydroxide solution is sucked in syringe,
Using described syringe, described sodium hydroxide solution is uniformly coated on neighboring area and the institute in described backboard front
State backboard side.
It should be noted that in the present embodiment, before stating the first cleaning treatment, institute first should not be cleaned with water
State target combination, because after clear water is washed, it is molten that the moisture that not only remains can dilute corresponding sodium hydroxide
Liquid, and lead to sodium hydroxide solution and Alumina build-up thing cannot be fully contacted reaction, reduce
Except effect.
Step s3, after described first cleaning treatment, carries out primary second to the combination of described target clear
Wash process, described first cleaning treatment includes the combination of described target is rinsed.
In the present embodiment, after described sodium hydroxide solution even spread, keep 8min～15min, then enter
Described second cleaning treatment of row.
In the present embodiment, using clear water, entirely described target combination can be rinsed, such as using spray
Water gun nozzle is directly rinsed.
Step s4, carries out secondary first cleaning treatment, at described first cleaning again to described backboard
Reason includes cleaning the neighboring area in described backboard front and described backboard side using sodium hydroxide solution.
Step s5, after described first cleaning treatment, carries out secondary the to the combination of described target again
Two cleaning treatment, described first cleaning treatment includes the combination of described target is rinsed.
In the present embodiment, further before described second cleaning treatment, that is, after step s4, and in step
Before rapid s5, using metal tools, such as steel knife or white steel knife etc., shovel described back plate surface front
Neighboring area and described backboard side, to confirm whether described aluminium oxide is completely removed.When described oxidation
After aluminum is completely removed, then carry out secondary described second cleaning treatment.
It should be noted that in other embodiments, can be repeated several times after described second cleaning treatment,
At least it is repeated once described first cleaning treatment and the process of described second cleaning treatment.
In the cleaning method of target combination being provided using the present embodiment, can be to the backboard of target combination
Being carried out processing, thus removing the reverse sputtering thing (aluminium oxide) in backboard respective surfaces, and removing effect
Fruit is strong, cleaning performance no dead angle.Meanwhile, the cleaning method that the present embodiment is provided is compared to existing polishing
For the method for polishing, the process-cycle of bulk article is shorter, and can reduce product appearance extremely,
The backboard life-span of volume production product is made to increase.Consuming personnel's man-hour is few simultaneously, and consume backboard is few, and backboard uses
Life.Specifically, the present invention, in volume production, can make the production capacity of backboard rise 40%, volume production is produced
The backboard service life of product increases by 45%.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (10)
1. a kind of cleaning method of target combination is it is characterised in that include:
There is provided the target combination after sputtering, described target combination includes remaining target and backboard, described residual
The solder side of target is welded together with the middle section in described backboard front, the periphery in described backboard front
Region exposes outside, and the neighboring area in described backboard front and side are attached with aluminium oxide in sputter procedure；
Described backboard is carried out with the first cleaning treatment, described first cleaning treatment includes molten using sodium hydroxide
Liquid cleans the neighboring area in described backboard front and described backboard side；
After described first cleaning treatment, described target is combined and carries out the second cleaning treatment, described second
Cleaning treatment includes the combination of described target is rinsed.
2. the cleaning method of target combination as claimed in claim 1 is it is characterised in that described sodium hydroxide is molten
The mass concentration scope of liquid is 25%～50%.
3. the cleaning method of target as claimed in claim 2 combination is it is characterised in that at described first cleaning
Reason includes: described sodium hydroxide solution is sucked in syringe, using described syringe by described sodium hydroxide
Solution is uniformly coated on the neighboring area in described backboard front and described backboard side.
4. the cleaning method of target as claimed in claim 3 combination is it is characterised in that by described sodium hydroxide
After solution even spread, keep 8min～15min, then carry out described second cleaning treatment.
5. the cleaning method of target combination as claimed in claim 4 is it is characterised in that be coated with described hydrogen-oxygen
After changing sodium solution, and before carrying out described second cleaning treatment, also include: using perching knife to still attached
The aluminium oxide in described backboard and carry out shovel and scrape process；Before described second cleaning treatment, using metal
The shovel neighboring area in described backboard front and described backboard side once, to confirm described aluminium oxide
Whether it is completely removed.
6. the cleaning method of target combination as claimed in claim 1 is it is characterised in that clean described second
After process, at least it is repeated once described first cleaning treatment and the process of described second cleaning treatment.
7. the cleaning method of the target combination as described in any one of claim 1 to 6 is it is characterised in that described
During first cleaning treatment, the combination of described target is vacantly erected on the tank of dress water.
8. the cleaning method of the target combination as described in any one of claim 1 to 6 is it is characterised in that described
During second cleaning treatment, the combination of described target is vacantly erected on the tank of dress water.
9. the cleaning method of target as claimed in claim 1 combination is it is characterised in that described residual target
Material is aluminum or aluminium alloy, and the material of described backboard is copper or copper alloy.
10. the cleaning method of target as claimed in claim 1 combination is it is characterised in that the shape of described backboard
For rectangular tabular.
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| CN201510401642.7A CN106334686A (en) | 2015-07-07 | 2015-07-07 | Cleaning method of target material composite |
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| CN201510401642.7A CN106334686A (en) | 2015-07-07 | 2015-07-07 | Cleaning method of target material composite |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108690958A (en) * | 2017-03-30 | 2018-10-23 | 住友化学株式会社 | Target cleaning method, the device for it, target manufacturing method and target and recycling ingot casting manufacturing method and recycling ingot casting |
| CN108690991A (en) * | 2017-03-30 | 2018-10-23 | 住友化学株式会社 | Clean method, the manufacturing method of target, the manufacturing method for recycling ingot casting and the recycling ingot casting of target |
| CN109266854A (en) * | 2017-07-17 | 2019-01-25 | 宁波创润新材料有限公司 | Sputtering target material recovery method |
| CN111378838A (en) * | 2018-12-28 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Target material recovery device and recovery method |
| CN111607798A (en) * | 2020-06-08 | 2020-09-01 | 福建阿石创新材料股份有限公司 | Cleaning method for aluminum target material reverse sputtering film |
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| CN111378838A (en) * | 2018-12-28 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Target material recovery device and recovery method |
| CN111607798A (en) * | 2020-06-08 | 2020-09-01 | 福建阿石创新材料股份有限公司 | Cleaning method for aluminum target material reverse sputtering film |
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