TW483937B - Recycle and reuse method of aluminum alloy sputter target material - Google Patents

Abstract

This invention provides a recycle and reuse method of aluminum alloy sputter target material to recycle and remake used aluminum alloy sputter target material so that waste on material can be reduced. The inventive method is to soak the recycled aluminum alloy sputter target material into hydrogen chloride solution of 1-5% concentration to remove surface impurities and oxides. Then, the recycled target material is cleaned, dried, and melted and cast at high temperature to remake. As to the aluminum target material using an indium sheet to attach to a back plate, a separation process of the back plate and removal of the indium sheet have to be carried out before it is soaked in acid solution.

Description

V. Description of the invention (1) [Application field of the invention]

The present invention relates to the -M Youkou Renren A method, in particular to the "recycling of gold and minerals for the recovery and reuse of dry minerals of various kinds of minerals; Mining method will be used to form a gangster. It is widely used in the deposition of various thin shells on substrates. The system has been filled with inert gas. Basically, in the gold plating process, there is a cathode assembly and —if, splashing. Inside the plating chamber (chainber), there are u,, and% poles. The cathode assembly contains the aforementioned target. The substrate described above is located near the anode in the machine room: it usually faces the anode between the cathode assembly and the anode. One; diameter j: away; two between the cathode assembly and the anode, the inert gas will form positive ions of the page, and the sputtering target will be bombarded by shengshi and zongzi (i〇n bombardment), so that the target's acoustic noise is shot out and deposited on the receiving surface of the substrate. Beibei's 18 ΐ ΐ material has been widely used in various machine and mining systems, and in various optical storage media such as CD-ROM, DVD_RAM, DVD_R0M, etc. :, Shao-Yiluo and other Ming alloy saki materials, used in: Good storage: the cleverly radiating layer, in addition to having a good reflection effect, it also has a very open anti-corrosion ability. Qiaoi aluminum alloy sputtering target is a consumable in the sputtering process-it will be in continuous production, and under the requirement of sputtering effect, aluminum alloy sputtering = lining must be used for a period of time Replacement, usually—a sputtered aluminum alloyΪ Page 4

Use dry materials. That is to be used, and [the weight of the purpose of the invention, after the weight of the invention, can no longer continue to be consumed by the alloy alloy plated dry material can no longer be consumed about 20 ~ 25%, there will be up to 75 ~ 80% of the waste and summary of the material] The irr of the mine is being provided, the alloy is re-recycled, and the second material is: cost of use ... alloy splashing ore 1 ^ rebenefit. J: the exposed 1 Lu alloy decontamination target "

Immerse in -acid solution to remove [sonic two a) /-: f sputtering target] the composition of the liquid contains at least, agricultural products: impurities and oxides, the 8 The acid solution is washed and dried; and (c) the ingot is made to a high temperature and a high temperature, higher than 900. cast at the temperature of c

An aluminum alloy is formed by combining an indium sheet with a back plate by mistake. The alloy material of the key target assembly (sputter target assembly) Ben Laming also provides a method for recycling. The method includes the following steps: (a ) The aluminum alloy sputtering target assembly is heated to melt the indium flakes, and then the base alloy plated dry material is separated from the back plate; (b) the indium flake material adhered to the surface of the aluminum alloy forged material Remove; (c) Immerse the aluminum alloy sputtering target in an acid solution to remove impurities and oxides remaining on the surface. The composition of the acid solution contains at least 1 to 5% hydrochloric acid; (d) the The acid solution remaining on the surface of the aluminum alloy sputtering target after the acid washing is washed and dried; and (e) the aluminum alloy sputtering target is placed in a high-temperature melting furnace to be higher than

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After melting back at a temperature of 900 ° C, it is cast to make a better understanding of the present invention. Here are the detailed descriptions with the illustrations, such as the [Detailed description of the embodiment] Ming alloy gold plated material, if not the blood selection piece is a solder and combined with-back plate; 丄 usually by indium gutter target assembly) ,,,, display board type Figure

= ,, two plates, aluminum 5 gold backplane or molybdenum alloy backplane, etc. As shown in "Figure i", an aluminum alloy sputtering target U is joined to a back plate 12, such as a copper alloy back, to form an aluminum alloy sputtering target assembly. The joining method is usually a method of recycling the aluminum alloy sputtering target 11 which is in contact with each other by using an intermediate layer of indium sheet 13 as solder, such as the "second embodiment" of the preferred embodiment of the present invention. As shown in the figure: First, the step 1 of separating the back plate is performed. The foregoing aluminum alloy sputtering is performed in a heating furnace to a temperature of 250 ~ 300 ° C for about 10 minutes to make the indium chip. After melting, the aluminum alloy sputtering target 11 and the back plate 12 are separated from each other. Next, the step 1 of removing the indium wafer is performed, and the indium wafer 1 adhered to the surface of the aluminum alloy sputtering target 11 3. Remove. The method of removing the indium sheet 1 3 can be quickly scraped off with the scraper while the indium sheet 1 3 is still in the molten state, or it can be mechanically, for example, using a grinder to attach the aluminum alloy to the aluminum alloy. The indium flakes 13 on the surface of the sputter-dried material 11 are ground away. Then, the acid cleaning step 10 is performed, and the alloy alloy plating plating material is immersed in a hydrochloric acid solution with a concentration of 1 to 5% to remove the surface. Residual impurities and

Page 6 483937 V. Description of the invention (4) The oxides' time for immersion in the acid solution is preferably 8 to 2 hours, and the remaining impurities can be smoothly removed, such as the remaining indium chips 1 3 and oxides. Remove completely. Next, a purification step is performed. The acid-washed aluminum alloy is sputter-plated with impurities such as hydrochloric acid adhered to the surface of the target 11, rinsed with water, and dried. Finally, the step i 〇5 of smelting and casting is performed. After the purified aluminum alloy sputtering target 11 is cut to an appropriate size, it is placed in a high-temperature melting furnace at 9 0 C 11 0 0 c. The temperature is heated and melted back, so that the aluminum alloy sputtered dry material ^ each component phase (Phase) is melted and uniformly mixed and cast into an ingot, and the melting furnace may be, for example, a vacuum induction melting furnace. In the process of melting and casting the aluminum alloy sputtering target 11, additional metal elements or alloys may be added as needed to supplement the group j of the aluminum alloy sputtering target. Example = An aluminum-titanium alloy sputtering target with a titanium content of I 54 wt%. After the step of melting and casting, the titanium content will decrease due to oxidation. 1 The aluminum-titanium sputtering target after casting usually still contains 135% or more titanium content, the aluminum-titanium alloy sputtering target with this composition still has good corrosion resistance, but if the titanium content is too low ((K3wt% or less), it will affect the aluminum ~ Lin 3 The corrosion resistance of the gold target, so when the titanium content is too low, additional pure titanium is added during the castable process to make the titanium content reach the required standard. The foregoing is only a preferred implementation of the present invention. As an example, 廿 = is used to limit the scope of implementation of the present invention; that is, all equal changes and modifications made in accordance with the present invention:

Page 7 483937 Schematic description [Schematic description] Figure 1 shows an aluminum alloy target assembly that uses an indium sheet to join an aluminum alloy sputtering target and a back plate together. Fig. 2 is a flowchart of a preferred embodiment of recycling and recycling of aluminum alloy sputtering targets according to the present invention. [Illustration of Symbols]

10 Aluminum alloy sputtering target assembly 11 Aluminum alloy sputtering target 12 Back plate 13 Indium wafer 101 Steps to separate the back plate 102 Steps to remove indium wafers 103 Steps to pickling 104 Steps to clean 105 Steps to melt casting

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Claims (1)

483937 VI. Application for patent scope 1 · A method for recycling aluminum alloy sputtering target, the following steps: I y U Immerse aluminum alloy sputtering target in a 1 ~ 5% hydrochloric acid solution to remove Impurities and oxides on the surface; Wash and dry the acid solution on the dry surface of the coin alloy key material; and Sputter the aluminum alloy target to more than 900. (: Each time the prayer key is remelted after the temperature is remelted. 2. = The method of recovering the base alloy plating target described in item 丨 of the patent application, and the method used, wherein the aluminum alloy sputtering target is remelted In the step, additional metal elements or alloys can be added to the smelting furnace. • A method for recycling and recycling aluminum alloy sputtering targets, wherein the aluminum and gold sputtering targets are made of indium flakes. Combined with a back plate to form an aluminum alloy sputter target assembly, the method includes at least the following steps: heating the sintered alloy sputter dry component to heat the steel sheet to melt, and then sputtering this alloy: The back plate is separated; = the aluminum alloy sputtering target is placed in a hydrochloric acid solution with a concentration of i ~ 5% to remove the impurities and oxides remaining on the surface; the surface of the aluminum sputtering target is acid-washed Clean and dry 丨 and remelt the aluminum alloy sputtering target at a temperature higher than 90 ° C to cast tungsten ingots. 4 • Recycling of the aluminum alloy sputtering target as described in item 3 of the patent application scope Method, in the step of heating the Ming alloy sputter dry assembly to separate It also includes-step f to remove the aluminum alloy = attached indium flakes. Double surface / VI. Patent application scope 5. Recycling method of aluminum alloy sputtering target as described in item 4 of the patent application The step of attaching the indium sheet of the aluminum alloy sputter plate to the surface of the rain = step includes quickly scraping off the indium sheet material while it is still molten. 6 The aluminum alloy described in item 3 of the scope of patent application A method for using a sputtering target, in which the step of sputtering the aluminum alloy target assembly heating plate is to place the target behind the one plus = knife blade, hold it for one minute, and separate the Ming II back plate. And the method of using the aluminum alloy sputtering target as described in item 3 of the scope of the patent application 'wherein the aluminum alloy machine plating target is remelted and recovered, and the required gold can be additionally added in the melting furnace_, V In the step, 荀 Vansu or alloy. Page 10