CN105217865A - 提高了再生收率的光致抗蚀剂高沸点剥离废液再生方法 - Google Patents

提高了再生收率的光致抗蚀剂高沸点剥离废液再生方法 Download PDF

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Publication number
CN105217865A
CN105217865A CN201510638926.8A CN201510638926A CN105217865A CN 105217865 A CN105217865 A CN 105217865A CN 201510638926 A CN201510638926 A CN 201510638926A CN 105217865 A CN105217865 A CN 105217865A
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CN
China
Prior art keywords
boiling point
high boiling
regeneration
residue
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510638926.8A
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English (en)
Chinese (zh)
Inventor
李浩卿
李寅圭
朴明俊
丘冀甲
金在炅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOREX Corp
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KOREX Corp
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Filing date
Publication date
Application filed by KOREX Corp filed Critical KOREX Corp
Publication of CN105217865A publication Critical patent/CN105217865A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02079—Cleaning for reclaiming

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN201510638926.8A 2015-02-17 2015-09-30 提高了再生收率的光致抗蚀剂高沸点剥离废液再生方法 Pending CN105217865A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150024043A KR101547195B1 (ko) 2015-02-17 2015-02-17 재생수율이 증진되는 포토레지스트 고비점 박리 폐액 재생 방법
KR10-2015-0024043 2015-02-17

Publications (1)

Publication Number Publication Date
CN105217865A true CN105217865A (zh) 2016-01-06

Family

ID=54061910

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510638926.8A Pending CN105217865A (zh) 2015-02-17 2015-09-30 提高了再生收率的光致抗蚀剂高沸点剥离废液再生方法

Country Status (2)

Country Link
KR (1) KR101547195B1 (ko)
CN (1) CN105217865A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108840495A (zh) * 2018-05-13 2018-11-20 四川久远化工技术有限公司 一种剥离废液提纯方法
CN109432874A (zh) * 2018-12-29 2019-03-08 上海亿鼎电子系统集成有限公司 一种有机溶剂的提纯回收装置及其方法和应用

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109550273A (zh) * 2018-12-28 2019-04-02 上海亿鼎电子系统集成有限公司 一种有机溶剂的提纯装置和方法
KR102527187B1 (ko) * 2023-02-28 2023-04-27 한만길 폐유기용제 재생시스템

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5249305B2 (ja) * 2010-10-29 2013-07-31 水ｉｎｇ株式会社 電子部品工場廃液の処理方法及びそのための装置
KR101330654B1 (ko) * 2013-03-06 2013-11-19 주식회사 코렉스 포토레지스트 고비점 박리 폐액 재생 장치
KR101330653B1 (ko) 2013-02-25 2013-11-19 주식회사 코렉스 포토레지스트 고비점 박리 폐액 재생 방법
KR101354523B1 (ko) 2013-11-27 2014-01-21 주식회사 코렉스 포토레지스트 고비점 박리폐액으로부터 1-피페라진에탄올을 회수하는 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108840495A (zh) * 2018-05-13 2018-11-20 四川久远化工技术有限公司 一种剥离废液提纯方法
CN108840495B (zh) * 2018-05-13 2020-12-22 四川久远化工技术有限公司 一种剥离废液提纯方法
CN109432874A (zh) * 2018-12-29 2019-03-08 上海亿鼎电子系统集成有限公司 一种有机溶剂的提纯回收装置及其方法和应用

Also Published As

Publication number Publication date
KR101547195B1 (ko) 2015-08-25

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Application publication date: 20160106