CN105206675A - Nldmos器件及其制造方法 - Google Patents
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Abstract
本发明公开了一种NLDMOS器件,包括:漂移区,P阱,形成于漂移区表面的第一PTOP层和第二PTOP层,在纵向上第一和第二PTOP层相隔一定距离且第一PTOP层位于第二PTOP层的底部,且第一PTOP层的深度比P阱的底部深度浅或相等;在横向上,两PTOP层都为分段式结构,两PTOP层的各段相互错开并交替排列结构,使两PTOP层的各段形成岛状二维耗尽结构。本发明还公开了一种NLDMOS器件的制造方法。本发明能帮助使漂移区完全耗尽、增加耗尽区面积,能提高器件的击穿电压。
Description
技术领域
本发明涉及半导体集成电路制造领域,特别是涉及一种N型横向扩散金属氧化物半导体(NLDMOS)器件;本发明还涉及一种NLDMOS器件的制造方法。
背景技术
500V横向扩散金属氧化物半导体(LDMOS)既具有分立器件高压大电流特点,又汲取了低压集成电路高密度智能逻辑控制的优点,单芯片实现原来多个芯片才能完成的功能,大大缩小了面积,降低了成本,提高了能效,符合现代电力电子器件小型化,智能化,低能耗的发展方向。
击穿电压作为衡量500V器件的关键参数而显得尤为重要,现有技术通过在漂移区的表面形成PTOP层能够增加漂移区的耗尽,实现降低表面电场(Resurf)效果,如图1所示,是现有NLDMOS器件的结构示意图;在硅衬底1上形成由N型深阱2组成,P阱4和漂移区相隔一定距离,P阱4也被一个N型深阱2包围,场氧3形成于N型深阱2表面,栅极结构由栅氧化层6和多晶硅栅7组成,源区8b形成于P阱4中并和多晶硅栅7自对准,P阱引出区9形成于P阱4表面并由P+区组成,漏区8b形成于漂移区表面并和场氧3的一侧自对准;在场氧3的靠近漏区8a侧形成有多晶硅场板7a,多晶硅场板7a和多晶硅栅7都是同一层多晶硅光刻刻蚀形成。层间膜10将底部的器件区域覆盖,通过接触孔和正面金属层11引出器件的源极、漏极和栅极。在漂移区的表面形成有PTOP层5,在源区8b侧的P阱4的底部也形成有PTOP层5,PTOP层5能够增加漂移区的耗尽,降低表面电场,最终提高器件的击穿电压。
发明内容
本发明所要解决的技术问题是提供一种NLDMOS器件,能帮助使漂移区完全耗尽、增加耗尽区面积,能提高器件的击穿电压。此,本发明还提供一种NLDMOS器件的制造方法。
为解决上述技术问题,本发明提供的NLDMOS器件包括:
N型掺杂的漂移区,形成于P型半导体衬底中。
P阱,形成于所述P型半导体衬底中,所述P阱和所述漂移区侧面接触或相隔一定距离。
形成于所述半导体衬底上方的多晶硅栅,所述多晶硅栅和所述半导体衬底表面隔离有栅介质层,在横向上所述多晶硅栅从所述P阱延伸到所述漂移区上方,被所述多晶硅栅覆盖的所述P阱用于形成沟道;所述多晶硅栅的第一侧面位于所述P阱上方、第二侧面位于所述漂移区上方。
由N+区组成的源区和漏区,所述源区形成于所述P阱中并和所述多晶硅栅的第一侧面自对准,所述漏区形成于所述漂移区中。
由P+区组成的衬底引出区,所述衬底引出区形成于所述P阱中并用于将所述P阱引出,所述衬底引出区和所述源区横向接触。
场氧,位于所述P阱和所述漏区之间的所述漂移区上方,所述场氧的第二侧和所述漏区横向接触,所述场氧的第一侧和所述P阱相隔一段距离;所述多晶硅栅延伸到所述场氧上方。
第一PTOP层和第二PTOP层,形成于所述漂移区表面,在纵向上所述第一PTOP层和所述第二PTOP层相隔一定距离且所述第一PTOP层位于所述第二PTOP层的底部,且所述第一PTOP层的深度比所述P阱的底部深度浅或相等;在横向上,所述第一PTOP层和所述第二PTOP层都为分段式结构,所述第一PTOP层的各段和所述第二PTOP层的各段相互错开并交替排列结构,使所述第一PTOP层的各段和所述第二PTOP层的各段形成岛状二维耗尽结构。
进一步的改进是,所述漂移区由第一N型深阱组成,所述P阱和所述漂移区相隔一定距离,所述P阱被第二N型深阱包围,所述第一N型深阱和所述第二N型深阱工艺条件相同且相隔一定距离。
进一步的改进是,在所述P阱的底部也形成有所述第一PTOP层和所述第二PTOP层。
进一步的改进是,所述半导体衬底为硅衬底。
进一步的改进是,所述栅介质层为栅氧化层。
进一步的改进是,所述场氧为浅沟槽场氧或局部场氧。
进一步的改进是,在所述半导体衬底正面形成有层间膜,在所述层间膜的顶部形成有由正面金属层形成的源极、漏极和栅极,所述源极通过穿过所述层间膜的接触孔和所述源区以及所述衬底引出区接触,所述漏极通过穿过所述层间膜的接触孔和所述漏区接触,所述栅极通过穿过所述层间膜的接触孔和所述多晶硅栅接触。
进一步的改进是,在所述场氧的顶部的靠近所述漏区一侧形成有多晶硅场板,所述多晶硅场板通过穿过所述层间膜的接触孔连接所述漏极。
为解决上述技术问题,本发明提供的NLDMOS器件的制造方法包括如下步骤:
步骤一、在P型P型半导体衬底形成N型掺杂的漂移区。
步骤二、在所述漂移区上方形成场氧。
步骤三、光刻打开P阱注入区并进行P阱注入在所述P型半导体衬底中形成P阱,所述P阱和所述漂移区侧面接触或相隔一定距离。
步骤四、光刻打开PTOP注入区域,进行第一次PTOP注入形成第一PTOP层,进行第二次PTOP注入形成第二PTOP层,所述第一次PTOP注入的能量大于所述第二PTOP注入的能量;所述第一PTOP层和所述第二PTOP层形成于所述漂移区表面,在纵向上所述第一PTOP层和所述第二PTOP层相隔一定距离且所述第二PTOP层位于所述第一PTOP层的底部,且所述第二PTOP层的深度比所述P阱的底部深度浅或相等;所述第一次PTOP注入和所述第二次PTOP注入都为分段注入,在横向上,所述第一PTOP层和所述第二PTOP层都为分段式结构,所述第一PTOP层的各段和所述第二PTOP层的各段相互错开并交替排列结构,使所述第一PTOP层的各段和所述第二PTOP层的各段形成岛状二维耗尽结构。
步骤五、形成栅介质层和多晶硅栅,所述多晶硅栅在横向上从所述P阱延伸到所述漂移区上方,被所述多晶硅栅覆盖的所述P阱用于形成沟道,所述多晶硅栅的第一侧面位于所述P阱上方、第二侧面位于所述漂移区顶部的所述场氧上方。
步骤六、进行N+注入形成源区和漏区,所述源区形成于所述P阱中并和所述多晶硅栅的第一侧面自对准,所述漏区形成于所述漂移区中,所述场氧的第二侧和所述漏区横向接触。
步骤七、进行P+注入形成衬底引出区,所述衬底引出区形成于所述P阱中并用于将所述P阱引出,所述衬底引出区和所述源区横向接触。
相对于现有单层PTOP层,本发明采用双层PTOP层,每层均为分段注入,两层间分段错开,充分利用岛状PTOP二维耗尽特点,能帮助漂移区完全耗尽,耗尽区面积增大,提高击穿电压。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明:
图1是现有NLDMOS器件的结构示意图;
图2本发明实施例NLDMOS器件的结构示意图;
图3A-图3F是本发明实施例方法各步骤中的器件结构示意图。
具体实施方式
如图2所示,本发明实施例NLDMOS器件的结构示意图;本发明实施例NLDMOS器件包括:
N型掺杂的漂移区,形成于P型半导体衬底101中。所述半导体衬底101为硅衬底。
P阱104,形成于所述P型半导体衬底101中,所述P阱104和所述漂移区侧面接触或相隔一定距离。
较佳为,所述漂移区由第一N型深阱102a组成,所述P阱104和所述漂移区相隔一定距离,所述P阱104被第二N型深阱102b包围,所述第一N型深阱102a和所述第二N型深阱102b工艺条件相同且相隔一定距离。
形成于所述半导体衬底101上方的多晶硅栅107,所述多晶硅栅107和所述半导体衬底101表面隔离有栅介质层106如栅氧化层,在横向上所述多晶硅栅107从所述P阱104延伸到所述漂移区上方,被所述多晶硅栅107覆盖的所述P阱104用于形成沟道;所述多晶硅栅107的第一侧面位于所述P阱104上方、第二侧面位于所述漂移区上方。
由N+区组成的源区108b和漏区108a,所述源区108b形成于所述P阱104中并和所述多晶硅栅107的第一侧面自对准,所述漏区108a形成于所述漂移区中。
由P+区组成的衬底引出区109,所述衬底引出区109形成于所述P阱104中并用于将所述P阱104引出,所述衬底引出区109和所述源区108b横向接触。
场氧103,位于所述P阱104和所述漏区108a之间的所述漂移区上方,所述场氧103的第二侧和所述漏区108a横向接触,所述场氧103的第一侧和所述P阱104相隔一段距离;所述多晶硅栅107延伸到所述场氧103上方。所述场氧103为浅沟槽场氧或局部场氧。
第一PTOP层105a和第二PTOP层105b,形成于所述漂移区表面,在纵向上所述第一PTOP层105a和所述第二PTOP层105b相隔一定距离且所述第一PTOP层105a位于所述第二PTOP层105b的底部,且所述第一PTOP层105a的深度比所述P阱104的底部深度浅或相等。在所述P阱104的底部也形成有所述第一PTOP层105a和所述第二PTOP层105b。在横向上,所述第一PTOP层105a和所述第二PTOP层105b都为分段式结构,所述第一PTOP层105a的各段和所述第二PTOP层105b的各段相互错开并交替排列结构,使所述第一PTOP层105a的各段和所述第二PTOP层105b的各段形成岛状二维耗尽结构。
在所述半导体衬底101正面形成有层间膜110,在所述层间膜110的顶部形成有由正面金属层111形成的源极、漏极和栅极,所述源极通过穿过所述层间膜110的接触孔和所述源区108b以及所述衬底引出区109接触,所述漏极通过穿过所述层间膜110的接触孔和所述漏区108a接触,所述栅极通过穿过所述层间膜110的接触孔和所述多晶硅栅107接触。
在所述场氧103的顶部的靠近所述漏区108a一侧形成有多晶硅场板107a,所述多晶硅场板107a通过穿过所述层间膜110的接触孔连接所述漏极。
如图3A至图3F所示,是本发明实施例方法各步骤中的器件结构示意图,本发明实施例NLDMOS器件的制造方法包括如下步骤:
步骤一、如图3A所示,在P型P型半导体衬底101形成N型掺杂的漂移区。较佳为,所述漂移区由第一N型深阱102a组成,在形成所述第一N型深阱102a的同时形成第二N型深阱102b,所述第二N型深阱102b和所述第一N型深阱102a相隔一定距离,后续形成的P阱104位于所述第二N型深阱102b中。
所述半导体衬底101为硅衬底。
步骤二、如图3B所示,在所述漂移区上方形成场氧103。所述场氧103为采用浅沟槽隔离工艺(STI)形成的浅沟槽场氧,或者所述场氧103为采用局部场氧工艺(LOCOS)形成的局部场氧。
步骤三、如图3C所示,光刻打开P阱104注入区并进行P阱104注入在所述P型半导体衬底101中形成P阱104,本发明实施例中所述P阱104位于所述第二N型深阱102b中。
步骤四、如图3D所示,光刻打开PTOP注入区域,进行第一次PTOP注入形成第一PTOP层105a,进行第二次PTOP注入形成第二PTOP层105b,所述第一次PTOP注入的能量大于所述第二PTOP注入的能量。
所述第一PTOP层105a和所述第二PTOP层105b形成于所述漂移区表面,在纵向上所述第一PTOP层105a和所述第二PTOP层105b相隔一定距离且所述第二PTOP层105b位于所述第一PTOP层105a的底部,且所述第二PTOP层105b的深度比所述P阱104的底部深度浅或相等。所述第一次PTOP注入和所述第二次PTOP注入都为分段注入,在横向上,所述第一PTOP层105a和所述第二PTOP层105b都为分段式结构,所述第一PTOP层105a的各段和所述第二PTOP层105b的各段相互错开并交替排列结构,使所述第一PTOP层105a的各段和所述第二PTOP层105b的各段形成岛状二维耗尽结构。
本步骤中,同时在所述P阱104的底部形成所述第一PTOP层105a和所述第二PTOP层105b。
步骤五、形成栅介质层如栅氧化层106和多晶硅栅107,所述多晶硅栅107在横向上从所述P阱104延伸到所述漂移区上方,被所述多晶硅栅107覆盖的所述P阱104用于形成沟道,所述多晶硅栅107的第一侧面位于所述P阱104上方、第二侧面位于所述漂移区顶部的所述场氧103上方。
本步骤五中在形成所述多晶硅栅107的同时在所述场氧103的顶部的靠近所述漏区108a一侧形成多晶硅场板107a。
步骤六、进行N+注入形成源区108b和漏区108a,所述源区108b形成于所述P阱104中并和所述多晶硅栅107的第一侧面自对准,所述漏区108a形成于所述漂移区中,所述场氧103的第二侧和所述漏区108a横向接触,也即所述漏区108a和所述场氧103的第二侧自对准。
步骤七、进行P+注入形成衬底引出区109,所述衬底引出区109形成于所述P阱104中并用于将所述P阱104引出,所述衬底引出区109和所述源区108b横向接触。
步骤八、在所述半导体衬底101正面形成有层间膜110。
步骤九、形成穿过所述层间膜110的接触孔,所述接触孔和底部对应的所述源区108b和所述衬底引出区109、所述漏区108a以及所述多晶硅栅107接触;
步骤十、在所述层间膜110顶部形成正面金属层111并进行光刻刻蚀形成源极、漏极和栅极,所述源极通过穿过所述层间膜110的接触孔和所述源区108b以及所述衬底引出区109接触,所述漏极通过穿过所述层间膜110的接触孔和所述漏区108a接触,所述栅极通过穿过所述层间膜110的接触孔和所述多晶硅栅107接触。所述多晶硅场板107a通过穿过所述层间膜110的接触孔连接所述漏极。
和现有一层PTOP层组成器件相比,本发明实施例通过两层PTOP层105a和105b能够在总的注入剂量保持和现有PTOP层的注入剂量一致的条件下,仅改变两层PTOP层105a和105b的注入能量就能实现对漂移区的耗尽的增宽和增深;再者,本发明两层PTOP层105a和105b都为分段注入,两层PTOP层105a和105b的各段相互错开并交替排列结构,形成岛状二维耗尽结构,这能进一步帮助漂移区完全还将,所以本发明实施例能提高耗尽区面积,提高击穿电压。
以上通过具体实施例对本发明进行了详细的说明,但这些并非构成对本发明的限制。在不脱离本发明原理的情况下,本领域的技术人员还可做出许多变形和改进,这些也应视为本发明的保护范围。
Claims (16)
1.一种NLDMOS器件,其特征在于,包括:
N型掺杂的漂移区,形成于P型半导体衬底中;
P阱,形成于所述P型半导体衬底中,所述P阱和所述漂移区侧面接触或相隔一定距离;
形成于所述半导体衬底上方的多晶硅栅,所述多晶硅栅和所述半导体衬底表面隔离有栅介质层,在横向上所述多晶硅栅从所述P阱延伸到所述漂移区上方,被所述多晶硅栅覆盖的所述P阱用于形成沟道;所述多晶硅栅的第一侧面位于所述P阱上方、第二侧面位于所述漂移区上方;
由N+区组成的源区和漏区,所述源区形成于所述P阱中并和所述多晶硅栅的第一侧面自对准,所述漏区形成于所述漂移区中;
由P+区组成的衬底引出区,所述衬底引出区形成于所述P阱中并用于将所述P阱引出,所述衬底引出区和所述源区横向接触;
场氧,位于所述P阱和所述漏区之间的所述漂移区上方,所述场氧的第二侧和所述漏区横向接触,所述场氧的第一侧和所述P阱相隔一段距离;所述多晶硅栅延伸到所述场氧上方;
第一PTOP层和第二PTOP层,形成于所述漂移区表面,在纵向上所述第一PTOP层和所述第二PTOP层相隔一定距离且所述第一PTOP层位于所述第二PTOP层的底部,且所述第一PTOP层的深度比所述P阱的底部深度浅或相等;在横向上,所述第一PTOP层和所述第二PTOP层都为分段式结构,所述第一PTOP层的各段和所述第二PTOP层的各段相互错开并交替排列结构,使所述第一PTOP层的各段和所述第二PTOP层的各段形成岛状二维耗尽结构。
2.如权利要求1所述的NLDMOS器件,其特征在于:所述漂移区由第一N型深阱组成,所述P阱和所述漂移区相隔一定距离,所述P阱被第二N型深阱包围,所述第一N型深阱和所述第二N型深阱工艺条件相同且相隔一定距离。
3.如权利要求2所述的NLDMOS器件,其特征在于:在所述P阱的底部也形成有所述第一PTOP层和所述第二PTOP层。
4.如权利要求1所述的NLDMOS器件,其特征在于:所述半导体衬底为硅衬底。
5.如权利要求1所述的NLDMOS器件,其特征在于:所述栅介质层为栅氧化层。
6.如权利要求1所述的NLDMOS器件,其特征在于:所述场氧为浅沟槽场氧或局部场氧。
7.如权利要求1所述的NLDMOS器件,其特征在于:在所述半导体衬底正面形成有层间膜,在所述层间膜的顶部形成有由正面金属层形成的源极、漏极和栅极,所述源极通过穿过所述层间膜的接触孔和所述源区以及所述衬底引出区接触,所述漏极通过穿过所述层间膜的接触孔和所述漏区接触,所述栅极通过穿过所述层间膜的接触孔和所述多晶硅栅接触。
8.如权利要求7所述的NLDMOS器件,其特征在于:在所述场氧的顶部的靠近所述漏区一侧形成有多晶硅场板,所述多晶硅场板通过穿过所述层间膜的接触孔连接所述漏极。
9.一种NLDMOS器件的制造方法,其特征在于,包括如下步骤:
步骤一、在P型P型半导体衬底形成N型掺杂的漂移区;
步骤二、在所述漂移区上方形成场氧;
步骤三、光刻打开P阱注入区并进行P阱注入在所述P型半导体衬底中形成P阱,所述P阱和所述漂移区侧面接触或相隔一定距离;
步骤四、光刻打开PTOP注入区域,进行第一次PTOP注入形成第一PTOP层,进行第二次PTOP注入形成第二PTOP层,所述第一次PTOP注入的能量大于所述第二PTOP注入的能量;所述第一PTOP层和所述第二PTOP层形成于所述漂移区表面,在纵向上所述第一PTOP层和所述第二PTOP层相隔一定距离且所述第二PTOP层位于所述第一PTOP层的底部,且所述第二PTOP层的深度比所述P阱的底部深度浅或相等;所述第一次PTOP注入和所述第二次PTOP注入都为分段注入,在横向上,所述第一PTOP层和所述第二PTOP层都为分段式结构,所述第一PTOP层的各段和所述第二PTOP层的各段相互错开并交替排列结构,使所述第一PTOP层的各段和所述第二PTOP层的各段形成岛状二维耗尽结构;
步骤五、形成栅介质层和多晶硅栅,所述多晶硅栅在横向上从所述P阱延伸到所述漂移区上方,被所述多晶硅栅覆盖的所述P阱用于形成沟道,所述多晶硅栅的第一侧面位于所述P阱上方、第二侧面位于所述漂移区顶部的所述场氧上方;
步骤六、进行N+注入形成源区和漏区,所述源区形成于所述P阱中并和所述多晶硅栅的第一侧面自对准,所述漏区形成于所述漂移区中,所述场氧的第二侧和所述漏区横向接触;
步骤七、进行P+注入形成衬底引出区,所述衬底引出区形成于所述P阱中并用于将所述P阱引出,所述衬底引出区和所述源区横向接触。
10.如权利要求9所述的方法,其特征在于:所述漂移区由第一N型深阱组成,所述P阱和所述漂移区相隔一定距离,所述P阱被第二N型深阱包围,步骤一中采用光刻工艺同时打开所述第一N型深阱和所述第二N型深阱的形成区域并进行N型离子注入同时形成所述第一N型深阱和所述第二N型深阱。
11.如权利要求10所述的方法,其特征在于:步骤四中同时在所述P阱的底部形成所述第一PTOP层和所述第二PTOP层。
12.如权利要求9所述的方法,其特征在于:所述半导体衬底为硅衬底。
13.如权利要求9所述的方法,其特征在于:所述栅介质层为栅氧化层。
14.如权利要求9所述的方法,其特征在于:所述场氧为采用浅沟槽隔离工艺形成的浅沟槽场氧,或者所述场氧为采用局部场氧工艺形成的局部场氧。
15.如权利要求9所述的方法,其特征在于:还包括如下步骤:
步骤八、在所述半导体衬底正面形成有层间膜;
步骤九、形成穿过所述层间膜的接触孔,所述接触孔和底部对应的所述源区和所述衬底引出区、所述漏区以及所述多晶硅栅接触;
步骤十、在所述层间膜顶部形成正面金属层并进行光刻刻蚀形成源极、漏极和栅极,所述源极通过穿过所述层间膜的接触孔和所述源区以及所述衬底引出区接触,所述漏极通过穿过所述层间膜的接触孔和所述漏区接触,所述栅极通过穿过所述层间膜的接触孔和所述多晶硅栅接触。
16.如权利要求15所述的方法,其特征在于:步骤五中在形成所述多晶硅栅的同时在所述场氧的顶部的靠近所述漏区一侧形成多晶硅场板,所述多晶硅场板通过穿过所述层间膜的接触孔连接所述漏极。
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US20220262949A1 (en) * | 2021-02-18 | 2022-08-18 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device |
US11810976B2 (en) * | 2021-02-18 | 2023-11-07 | Semiconductor Components Industries, Llc | Semiconductor device |
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