CN105203855B - Photo-electric electric field near-field scan instrument - Google Patents
Photo-electric electric field near-field scan instrument Download PDFInfo
- Publication number
- CN105203855B CN105203855B CN201510684033.7A CN201510684033A CN105203855B CN 105203855 B CN105203855 B CN 105203855B CN 201510684033 A CN201510684033 A CN 201510684033A CN 105203855 B CN105203855 B CN 105203855B
- Authority
- CN
- China
- Prior art keywords
- electric
- axis guide
- guide rail
- electric field
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005684 electric field Effects 0.000 title claims abstract description 86
- 239000000523 sample Substances 0.000 claims abstract description 83
- 239000013078 crystal Substances 0.000 claims abstract description 54
- 239000000835 fiber Substances 0.000 claims abstract description 48
- 238000012360 testing method Methods 0.000 claims abstract description 45
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000012545 processing Methods 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000004891 communication Methods 0.000 claims abstract description 16
- 238000013016 damping Methods 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 238000005259 measurement Methods 0.000 abstract description 9
- 238000007405 data analysis Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 230000005672 electromagnetic field Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Tests Of Electronic Circuits (AREA)
Abstract
Photo-electric electric field near-field scan instrument of the present invention, it is related to measurement magnetic variable and the system of electric variable, it is a kind of using the three-dimensional photo-electric electric field near-field scan device for being provided with upper and lower two fiber crystals probe, is made up of electric field near-field scan device, power supply, controller, drive module, three stepper motors, No. three position sensors, signal processing circuit, 485 bus communication modules, host computer, semiconductor laser and optical circuit；The scanner can scan circuit board under test tow sides electric field near-field field strength simultaneously, carry out radiationless scanning without secondary interference and to the parts to be tested, the electric field detecting system for overcoming prior art is inherently introduced into spatial electromagnetic interference, observe and record and data analysis is all very complicated, caused vibrations in moving process, the defects of control mode underaction and measurement accuracy be not high.
Description
Technical field
Technical scheme is related to measurement magnetic variable and the system of electric variable, specifically photo-electric electric field near field
Scanner.
Background technology
The electromagnetic compatibility of circuit board is electronic technology development to very important link after the high speed epoch, the circuit in work
Various electromagnetic radiation caused by plate can produce a certain degree of influence to its ambient electron element and circuit, in component selection and
During board design, EMC Design is extremely important step, and the test and evaluation of circuit board electromagnetic radiation, is needed
There is professional electromagnetic field intensity test equipment to complete.The technology of comparative maturity is made using miniature antenna in the world at present
Probe or the detecting plate of miniature antenna array composition detect electric field, the faint model that miniature antenna is captured adjusted
Reason amplification, obtains corresponding electric field intensity value；Another method is to utilize hall principle, using the special material to magnetic-field-sensitive
Probe is made to gather magnetic field intensity, is required for applying external voltage or electric current on probe with upper type, inherently introduces
Spatial electromagnetic disturbs, and the electromagnetic radiation under different conditions of work needs the probes of different parameters to complete to measure, and observation is remembered
Record and data analysis are all complex.
CN104635063A discloses a kind of 3 D electromagnetic field translation scan optical measuring system and electromagnetic field assay method,
CN204422737U reports a kind of three-dimensional optical passage electromagnetic field motion scan measuring system, and both contents are similar, all deposit
Following defect：1. optical sensor is installed on transfer arm, caused shake is adopted to fiber middle light signal in moving process
Collection has fatal influence；2. control mode underaction in measurement control；3. measurement accuracy is not high.
The content of the invention
The technical problems to be solved by the invention are：Photo-electric electric field near-field scan instrument is provided, is that a kind of use is provided with
The three-dimensional photo-electric electric field near-field scan device of upper and lower two fiber crystals probe, overcome the electric field detecting system of prior art
Inherently it is introduced into spatial electromagnetic interference, observes and records and data analysis is all very complicated, caused vibrations, controlling party in moving process
The defects of formula underaction and not high measurement accuracy.
Technical scheme is used by the present invention solves the technical problem：Photo-electric electric field near-field scan instrument, is that one kind is adopted
The three-dimensional photo-electric electric field near-field scan device popped one's head in upper and lower two fiber crystals are provided with, by electric field near-field scan device,
Power supply, controller, drive module, three stepper motors, No. three position sensors, signal processing circuit, 485 bus communication moulds
Block, host computer, semiconductor laser and optical circuit are formed；The connected mode of above-mentioned part is：The input voltage of power supply is friendship
220 volts are flowed, the output of power supply is provided with the positive 5V2A of direct current 24V3A, direct current and direct current bears the tunnels of 5V2A tri-, wherein power supply output direct current
24V3A bears 5V2A and provides electricity to amplifier uA741 jointly to drive module and three stepper motor power supplies, the positive 5V2A of direct current and direct current
Source, power supply export the positive 5V2A of direct current and powered to controller, No. three position sensors, semiconductor laser and signal processing circuit,
Three stepper motors connect the drive module containing three motor drivers, and controller controls the drive module, and is connected to
No. three position sensors, 905nm wavelength lasers beam is transferred to electric field near-field scan through optical circuit caused by semiconductor laser
Fiber crystal probe in device, the laser intensity that fiber crystal probe is reflected back optical circuit pass by signal processing circuit
Controller is sent to, this signal is carried out digital-to-analogue conversion and is sent to host computer, host computer by 485 bus communication modules by controller
The data that controller transmits are subjected to conversion and are shown to graphical window generation 3-D graphic, photo-electric electric field near field is thus completed and sweeps
Retouch instrument allomeric function；Above-mentioned electric field near-field scan device is adjusted by two fiber crystals probes, the probe up and down with scale
Arm, circuit board under test, circuit board under test fixed mount, X-axis guide rail, Y-axis guide rail, Z axis guide rail, probe damping firm banking and three axles
It is mechanically fixed base to form, the connected mode of above-mentioned parts is in the device：The fiber crystal probe of one top is arranged on
The front end of the adjustment arm horizontal arm of probe up and down with scale, the fiber crystal probe below another are arranged on probe damping and fixed
The front end of base, two fiber crystals probe consistencies from top to bottom, circuit board under test is clamped on circuit board under test fixed mount, to be measured
Circuit board fixing rack is fixed in horizontal X-axis guide rail, and X-axis guide rail is embedded in the guide groove of vertical two Y-axis guide rails in left and right
Interior to move up and down, the Y-axis guide rail of left and right two is then embedded in the guide groove of two Z axis guide rails in left and right positioned at horizontal plane respectively
In can move forward and backward, X-axis guide rail, two Y-axis guide rails and two Z axis guide rails are fixed by three shaft mechanical firm bankings of spill together
For a framework entirety, pop one's head in damping firm banking and three shaft mechanical firm bankings be placed in same level, but between without any
Rigid connection, and done damping processing at damping firm banking ground connection of popping one's head in；Under in above-mentioned photo-electric electric field near-field scan instrument
Stating specific installation site of the part in electric field near-field scan device is：Three stepper motors are separately fixed at the one of X-axis guide rail
The one end at end, one end of Y-axis guide rail and Z axis guide rail, drive module, controller and 485 bus communication sequence of modules are installed on three
Inside shaft mechanical firm banking, No. three position sensors be respectively disposed on three stepper motors respectively with X-axis guide rail, Y-axis guide rail
With the junction of Z axis guide rail, signal processing circuit, semiconductor laser and optical circuit are placed in probe damping firm banking
On.
Above-mentioned photo-electric electric field near-field scan instrument, fiber crystal probe be by optical fiber and GaAs cubic crystal according to
Fixed crystal orientation bonds together composition.
Above-mentioned photo-electric electric field near-field scan instrument, the signal processing circuit are to use photomultiplier J1 and U1 chip
UA741 amplifiers build circuit, and its composition is, J1 is photomultiplier, and one after 0.01uF electric capacity C1 is in parallel with 100K resistance R2
The negative pole end 2 of uA741 amplifiers and J1 2 ends are terminated, electric capacity C1 is connected the defeated of uA741 amplifiers with the other end after resistance R2 parallel connections
Go out end 6 and 2K resistance R5 one end, resistance R5 other ends connection 10K resistance R6 one end, resistance R6 other ends ground connection, 10K resistance R1
The positive terminal 3 of one termination uA741 amplifiers and J1 1 end, R1 other ends ground connection, Net1 are the negative electricity of the pin of uA741 amplifiers negative voltage 7
Source access point, the pin of 10 Ohmic resistance R3 mono- termination uA741 amplifiers positive voltage 4, another termination positive source+V1 of R3,10 ohm of electricity
Resistance R4 mono- terminates power cathode-V1, the R4 other end and is connected to together with 220uF electric capacity C2 positive poles and 0.01uF electric capacity C3 one end parallel connections
Net1, C2 negative pole, the C3 other ends, 220uF electric capacity C4 negative poles and 0.01uF electric capacity C5 one end are grounded together, and C4 positive poles and C5 are another
End connects the pin of uA741 amplifiers positive voltage 4 together.
Above-mentioned photo-electric electric field near-field scan instrument, described two fiber crystals probe consistencies from top to bottom, and two fiber crystals
The distance between probe is adjustable, and adjustable extent is 1~50 centimetre.
Above-mentioned photo-electric electric field near-field scan instrument, the adjustable extent of the adjustment arm of probe up and down with scale for 1~
50cm, circuit board under test fixed mount can fix the circuit board under test of 1~50cm width, the rail that X-axis guide rail, Y-axis guide rail and Z axis are led
Moving range is 1~60cm, and probe damping firm banking size is 40cm × 40cm × 10cm, the chi of three shaft mechanical firm bankings
Very little is 100cm × 80cm × 10cm.
Above-mentioned photo-electric electric field near-field scan instrument, the model electricity for the photomultiplier J1 that the signal processing circuit uses
Work board GDB-2.
Above-mentioned photo-electric electric field near-field scan instrument, the power supply use inscription latitude 24V and positive and negative 5V multi-output switch power sources,
Controller uses STM32F103ZET6, and drive module uses ZD-6717-V3 brush DC drivers, and three stepper motors use
57HS09 two-phase stepping motors, No. three position sensors use NJK-5001C proximity Hall switch, and 485 bus communication modules are adopted
With MAX1487 chips, host computer using can smooth operation Windows XP systems mini desktop computer, semiconductor laser
Using LSR-905nm and 500mW semiconductor laser, optical circuit include collimation lens, condenser, spectroscope, four/
One wave plate and reflective mirror, these parts are obtained by known approach.
Above-mentioned photo-electric electric field near-field scan instrument, the probe up and down with scale in the electric field near-field scan device are adjusted
Whole arm, circuit board under test, circuit board under test fixed mount, X-axis guide rail, Y-axis guide rail, Z axis guide rail, probe damping firm banking and three
Shaft mechanical firm banking is that those skilled in the art being capable of processing and fabricating.
Above-mentioned photo-electric electric field near-field scan instrument, the installation of all parts and connected mode are those skilled in the art institutes
It can grasp.
Above-mentioned photo-electric electric field near-field scan instrument, its method run are：On device after electricity, at electric field near-field scan device
In original position, user adjusts the probe up and down with scale according to actual conditions and adjusts arm, adjusts what fiber crystal up and down was popped one's head in
Position and distance, and scanning starting position, scanning range and scanning accuracy are set in host computer, the Z axis guide rail in setting value
Scanning range should be less than the space length of two fiber crystals probe, and host computer is by 485 bus communication modules by user data
Controller is sent to, controller controls drive module Driving Stepping Motor according to these data, circuit board under test is moved into phase
Answer position and start scanning imaging system, after bounds of the scanning to setting, controller control drive module Driving Stepping Motor,
Circuit board under test fixed mount and circuit board under test are returned into position and wait scan command next time.
The beneficial effects of the invention are as follows：Compared with prior art, the substantive distinguishing features of protrusion of the invention are：The present invention adopts
The three-dimensional electric field near-field scan device popped one's head in double fiber crystals, based on three-axis stepping motor control system, is provided with
Lower two fiber crystals probe, can scan circuit board under test tow sides electric field near-field field strength simultaneously.Fiber crystal scanning probe
To data handled by single-chip microcomputer after pass through and by 485 buses upload to host computer, these data are handled in host computer, shown
Show and store.485 structures of data acquisition, motor control and host computer composition one master and multiple slaves, user are set by host computer
Beginning position, scanning range and scanning accuracy these parameters, various parameters are sent to controller after the completion of setting, controller receives
Control drive module Driving Stepping Motor to move circuit board under test to relevant position according to setting value afterwards, and determine to scan model
Enclose, step distance and precision.
Compared with prior art, marked improvement of the invention is as follows：
(1) photo-electric electric field near-field scan instrument of the present invention can effectively avoid scanning means to original using double fiber crystal probes
The destruction of electric field, the circuit board positive and negative data collected are in host computer while show, three-dimensional field strength data are more vivid,
Positive and negative near field is scanned simultaneously and variable-resolution shortens sweep time, and original position and scope setting make scanning cleverer
Dexterous victory, the function that historical data is checked are more convenient user and used.
(2) photo-electric electric field near-field scan instrument of the present invention is the three-dimensional electric field scanning means without secondary interference, can be to be measured
Part carries out radiationless scanning.
(3) photo-electric electric field near-field scan instrument of the present invention is a kind of visualization control scanning means, can flexibly be scanned to be measured
The three-dimensional electric field near-field field strength on the positive and negative surface of circuit board.
(4) photo-electric electric field near-field scan instrument of the present invention can scan stock size alive circuit plate positive and negative simultaneously, and
Generate electric field near field 3-D scanning figure.
(5) optical sensor is installed on transfer arm in the prior art, and caused vibrations are to light in optical fiber in moving process
The influence of signal acquisition is fatal, and the present invention overcomes this defect using isolation probe damping firm banking.
(6) existing patented technology control mode in measurement controls is dumb, and the scanning system in the present invention, which can input, sweeps
Scope, scanning accuracy and any original position are retouched, is greatly user-friendly.
(7) measurement accuracy of the invention is higher than existing patented technology.
(8) present invention realizes comprehensive 3 D stereo near-field scan using double fiber crystal probes, shortens scanning
Time.
In a word, instant invention overcomes the electric field detecting system of prior art inherently to introduce spatial electromagnetic interference, observation note
Record and data analysis is all very complicated, caused vibrations, control mode underaction and measurement accuracy is not high lacks in moving process
Fall into.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is the main assembly schematic block diagram of photo-electric electric field near-field scan instrument of the present invention.
Fig. 2 is the composition schematic diagram of photo-electric electric field near-field scan instrument of the present invention and electric field near-field scan device therein.
Fig. 3 is that the signal processing circuit in photo-electric electric field near-field scan instrument of the present invention forms schematic diagram.
In figure, 1. power supplys, 2. controllers, 3. drive modules, 4. stepper motors, 5. position sensors, 6. signal transactings electricity
Road, 7.485 bus communication modules, 8. host computers, 9. semiconductor lasers, 10. optical circuits, 11. fiber crystals probe, 12.
Electric field near-field scan device, 13. circuit board under test, 14. circuit board under test fixed mounts, 15.X axis rails, 16.Y axis rails, 17.Z
Axis rail, 18. probe damping firm bankings, 19. 3 shaft mechanical firm bankings, the 20. adjustment arms of probe up and down with scale.
Embodiment
Embodiment illustrated in fig. 1 shows that overall form of photo-electric electric field near-field scan instrument of the present invention is：Including electric field near field
Scanning means 12, power supply 1, controller 2,3, three stepper motors 4 of drive module, No. three position sensors 5, signal processing circuit
6th, 485 bus communication modules 7, host computer 8, semiconductor laser 9 and optical circuit 10；The connected mode of above-mentioned part is：Electricity
The input voltage in source 1 is AC 220 V, and the output of power supply 1 is provided with the positive 5V2A of direct current 24V3A, direct current and direct current bears 5V2A tri-
Road, wherein power supply 1 export direct current 24V3A and powered to drive module 3 and three stepper motors 4, power supply 1 export the positive 5V2A of direct current and
Direct current is born 5V2A and powered to amplifier uA741, and power supply 1 exports the positive 5V2A of direct current to controller 2, No. three position sensors 5, semiconductor
Laser 9 and signal processing circuit 6 are powered, and three stepper motors 4 connect the drive module 3 containing three motor drivers, control
Device 2 processed controls drive module 3, and is connected to No. three position sensors 5,905nm wavelength lasers caused by semiconductor laser 9
The fiber crystal probe 11 that beam is transferred in three-dimensional electric field near-field scan device 12 through optical circuit 10 (does not show in Fig. 1, sees figure
2), the fiber crystal 11 (not shown in Fig. 1, see Fig. 2) of popping one's head in are reflected back the laser intensity of optical circuit 10 and pass through signal transacting
Circuit 6 is sent to controller 2, and this signal is carried out digital-to-analogue conversion and is sent to by 485 bus communication modules 7 by controller 2
Position machine 8, the data that host computer 8 transmits controller 2 carry out conversion and are shown to graphical window generation 3-D graphic, thus complete light
The allomeric function of electric-type electric field near-field scan instrument.
Embodiment illustrated in fig. 2 shows, the electric field near-field scan device 12 in photo-electric electric field near-field scan instrument of the present invention
Composition be：It is the adjustment of probe up and down arm 20, circuit board under test 13 including two fiber crystals probe 11, with scale, to be measured
Circuit board fixing rack 14, X-axis guide rail 15, Y-axis guide rail 16, Z axis guide rail 17, probe damping firm banking 18 and three shaft mechanicals are fixed
Base 19；The connected mode of above-mentioned parts is：The fiber crystal probe 11 of one top is arranged on the probe up and down with scale
The front end of the horizontal arm of arm 20 is adjusted, before the fiber crystal probe 11 below another is arranged on probe damping firm banking 18
End, two fiber crystals 11 consistencies from top to bottom of probe, circuit board under test 13 are clamped on circuit board under test fixed mount 14, electricity to be measured
Road plate fixed mount 14 is fixed in horizontal X-axis guide rail 15, and X-axis guide rail 15 is fixed with the vertical Y-axis guide rail 16 of left and right two,
The Y-axis guide rail 16 of left and right two is then respectively arranged in the guide groove of two Z axis guide rails 17 in left and right, 15, two Y-axis of X-axis guide rail
Guide rail 16 and two Z axis guide rails 17 are fixed as a framework entirety by three shaft mechanical firm bankings 19 of spill together, and probe subtracts
The shake shaft mechanical firm banking 19 of firm banking 18 and three is placed in same level, but between without any rigid connection, and probe subtracts
Damping processing is done at the shake ground connection of firm banking 18, No. three position sensors 5 are separately mounted to three stepper motors 4 and distinguish X-axis
Guide rail 15, Y-axis guide rail 16 and Z axis guide rail 17 junction and be connected to controller 2.
Embodiment illustrated in fig. 3 shows that the signal processing circuit in photo-electric electric field near-field scan instrument of the present invention is to use
Photomultiplier J1 and U1 chip uA741 amplifiers build circuit, and its composition is, J1 is photomultiplier, 0.01uF electric capacity C1 with
The negative pole end 2 of a termination uA741 amplifiers and J1 2 ends after 100K resistance R2 parallel connections, it is another after electric capacity C1 is in parallel with resistance R2
The output end 6 of one end connection uA741 amplifiers and 2K resistance R5 one end, resistance R5 other ends connection 10K resistance R6 one end, resistance R6
The other end is grounded, and 10K resistance R1 mono- terminates the positive terminal 3 of uA741 amplifiers and J1 1 end, R1 other ends ground connection, and Net1 is
The negative supply access point of the pin of uA741 amplifiers negative voltage 7, the pin of 10 Ohmic resistance R3 mono- termination uA741 amplifiers positive voltage 4, R3 are another
Termination power positive pole+V1,10 Ohmic resistance R4 mono- termination power cathode-V1, the R4 other end and 220uF electric capacity C2 positive poles and
0.01uF electric capacity C3 one end parallel connections are connected to Net1, C2 negative poles, the C3 other ends, 220uF electric capacity C4 negative poles and 0.01uF electric capacity together
C5 one end is grounded together, and C4 positive poles and the C5 other ends connect the pin of uA741 amplifiers positive voltage 4 together.
Embodiment
The photo-electric electric field near-field scan instrument of the present embodiment is formed according to Fig. 1, Fig. 2 and embodiment illustrated in fig. 3 assembling, including
Electric field near-field scan device 12, power supply 1, controller 2,3, three stepper motors 4 of drive module, No. three position sensors 5, signal
The bus communication module 7 of process circuit 6,485, host computer 8, semiconductor laser 9 and optical circuit 10；The input voltage of power supply 1
For AC 220 V, the output of power supply 1 is provided with the positive 5V2A of direct current 24V3A, direct current and direct current bears the tunnels of 5V2A tri-, and wherein power supply 1 is defeated
Go out direct current 24V3A to power to drive module 3 and three stepper motors 4, power supply 1 exports the positive 5V2A of direct current and direct current bears 5V2A to fortune
UA741 power supplies are put, power supply 1 exports 5V2A to controller 2, No. three position sensors 5, semiconductor laser 9 and signal transacting electricity
Road 6 powers, and three stepper motors 4 connect the drive module 3 containing three motor drivers, and controller 2 controls drive module 3,
And No. three position sensors 5 are connected to, 905nm wavelength lasers beam transmits through optical circuit 10 caused by semiconductor laser 9
To the fiber crystal probe 11 in three-dimensional electric field near-field scan device 12, fiber crystal probe 11 is reflected back optical circuit 10
Laser intensity is sent to controller 6 by signal processing circuit 6, and this signal is carried out controller 2 into digital-to-analogue conversion and process 485 is total
Line communication module 7 is sent to host computer 8, and the data that host computer 8 transmits controller 2 carry out conversion and are shown to graphical window generation
3-D graphic, thus complete the allomeric function of photo-electric electric field near-field scan instrument；Above-mentioned electric field near-field scan device 12 is by two
Individual fiber crystal probe 11, the adjustment of probe up and down arm 20, circuit board under test 13, circuit board under test fixed mount 14, X with scale
Axis rail 15, Y-axis guide rail 16, Z axis guide rail 17, probe damping firm banking 18 and three shaft mechanical firm bankings 19 are formed, the dress
Putting the connected mode of middle above-mentioned parts is：The fiber crystal probe 11 of one top is arranged on the adjustment of probe up and down with scale
The front end of the horizontal arm of arm 20, the fiber crystal probe 11 below another are arranged on the front end of probe damping firm banking 18, and two
11 consistencies from top to bottom of individual fiber crystal probe, circuit board under test 13 are clamped on circuit board under test fixed mount 14, circuit board under test
Fixed mount 14 is fixed in horizontal X-axis guide rail 15, and X-axis guide rail 15 is embedded in the guide rail of vertical two Y-axis guide rails 16 in left and right
It can be moved up and down in groove, the Y-axis guide rail 16 of left and right two is then embedded in the Z axis guide rail 17 of left and right two positioned at horizontal plane respectively
It can be moved forward and backward in guide groove, 15, two Y-axis guide rails 16 of X-axis guide rail and two Z axis guide rails 17 are together by three shaft mechanicals of spill
Firm banking 19 is fixed as a framework entirety, and probe damping firm banking 18 and three shaft mechanical firm bankings 19 are placed in same water
Plane, but between without any rigid connection, and done damping processing at the ground connection of damping firm banking 18 of popping one's head in；Above-mentioned photo-electric electricity
Specific installation site of the components described below in electric field near-field scan device 12 in near-field scan instrument be：Three stepper motors 4
It is separately fixed at one end of one end of X-axis guide rail 15, one end of Y-axis guide rail 16 and Z axis guide rail 17, drive module 3, controller 2
It is installed on the order of 485 bus communication module 7 inside three shaft mechanical firm bankings 19, No. three position sensors 5 are respectively disposed on
Three stepper motors 4 junction with X-axis guide rail 15, Y-axis guide rail 16 and Z axis guide rail 17 respectively, signal processing circuit 6, partly leads
Body laser 9 and optical circuit 10 are placed on probe damping firm banking 19.
In the photo-electric electric field near-field scan instrument of the present embodiment, controller 2 controls drive module 3 to realize three stepper motors
4 start and stop and rotating；No. three position sensors 5 are separately mounted to three stepper motors 4 and distinguish X-axis guide rail 15, Y-axis guide rail 16
With the junction of Z axis guide rail 17 and be connected to controller 2, for detecting the initial position of electric field scanning device 12；Signal transacting
Circuit 6 is the circuit changed photosignal, nursed one's health and amplified.
In the electric field near-field scan device 12 of the present embodiment, the adjustment arm 20 of probe up and down with scale can be according to actual need
With the position of regulation X-axis guide rail 15 manually, circuit board under test fixed mount 14 carries spring assembly, can be automatically to circuit board under test
13 clamp, and X-axis guide rail 15, Y-axis guide rail 16 and Z axis guide rail 17 drive leading screw to move by three stepper motors 4 respectively, in order to
Avoid stepper motor 4 run when mechanical arm vibrations to fiber crystal probe 11 and optical circuit 10 influence, probe damping consolidate
Determine without any rigid connection between the shaft mechanical firm banking 19 of base 18 and three, and done at the ground connection of damping firm banking 18 of popping one's head in
Damping is handled.
In the photo-electric electric field near-field scan instrument of the present embodiment, two fiber crystals 11 distances in-between of probe are
25cm, the adjustable extent of the adjustment arm 20 of probe up and down with scale is 25cm, and circuit board under test fixed mount 14 can fix 25cm
The circuit board under test 13 of width, the rail moving range that X-axis guide rail 15, Y-axis guide rail 16 and Z axis lead 17 are 30cm, and probe damping is consolidated
It is 40cm × 40cm × 10cm to determine the size of base 18, and the size of three shaft mechanical firm bankings 19 is 100cm × 80cm × 10cm.
In the photo-electric electric field near-field scan instrument of the present embodiment, the fiber crystal probe is by optical fiber and GaAs cube
Crystal bonds together composition according to fixed crystal orientation.
In the photo-electric electric field near-field scan instrument of the present embodiment, the photomultiplier J1's of the signal processing circuit use
Model electrician's board GDB-2.
In the photo-electric electric field near-field scan instrument of the present embodiment, the power supply is using inscription latitude 24V and positive and negative 5V multiple-channel outputs
Switching Power Supply, controller are using STM32F103ZET6, drive module using ZD-6717-V3 brush DCs driver, three steps
Stepper motor is using 57HS09 two-phase stepping motors, No. three position sensors using NJK-5001C proximity Hall switch, 485 buses
Communication module is used using MAX1487 chips, host computer can the smooth mini desktop computer for running Windows XP systems, half
Conductor laser includes collimation lens, condenser, light splitting using LSR-905nm, 500mW semiconductor laser and optical circuit
Mirror, quarter-wave plate, reflective mirror, these parts are obtained by known approach.
The photo-electric electric field near-field scan instrument of the present embodiment, in the electric field near-field scan device with scale up and down
Probe adjustment arm 20, circuit board under test 13, circuit board under test fixed mount 14, X-axis guide rail 15, Y-axis guide rail 16, Z axis guide rail 17, spy
Head damping firm banking 18 and three shaft mechanical firm bankings 19 are that those skilled in the art being capable of processing and fabricating.
The photo-electric electric field near-field scan instrument of the present embodiment, the installation of all parts and connected mode are art technologies
What personnel can grasp.
The photo-electric electric field near-field scan instrument of the present embodiment, its method run are：On device after electricity, electric field near-field scan
Device 12 is in original position, and user adjusts the probe up and down with scale according to actual conditions and adjusts arm 20, adjusts optical fiber up and down
The position of crystal probe 11 and distance, and scanning starting position, scanning range and scanning accuracy are set in host computer 8, setting
The scanning range of Z axis guide rail 17 in value should be less than the space length of two fiber crystal probes 11, and host computer 8 passes through 485 buses
User data is sent to controller 2 by communication module 7, and controller 2 controls the Driving Stepping Motor of drive module 3 according to these data
4, circuit board under test 13 is moved to relevant position and starts scanning imaging system, after bounds of the scanning to setting, controller 2
The Driving Stepping Motor 4 of drive module 4 is controlled, circuit board under test fixed mount 14 and circuit board under test 13 are returned into position etc.
Treat scan command next time.
Embodiment 2
In the photo-electric electric field near-field scan instrument of the present embodiment, except two fiber crystals 11 distances in-between of probe are
1cm, the adjustable extent of the adjustment arm 20 of probe up and down with scale is 1cm, and circuit board under test fixed mount 14 can fix 1cm width
Circuit board under test 13, X-axis guide rail 15, Y-axis guide rail 16 and Z axis lead 17 rail moving range be 1cm outside, other same embodiments
1。
Embodiment 3
In the photo-electric electric field near-field scan instrument of the present embodiment, except two fiber crystals 11 distances in-between of probe are
50cm, the adjustable extent of the adjustment arm 20 of probe up and down with scale is 50cm, and circuit board under test fixed mount 14 can fix 50cm
The circuit board under test 13 of width, the rail moving range that X-axis guide rail 15, Y-axis guide rail 16 and Z axis lead 17 are that other are same outside 60cm
Embodiment 1.
Claims (4)
1. photo-electric electric field near-field scan instrument, it is characterised in that：It is that a kind of use is provided with upper and lower two by optical fiber and GaAs
Cubic crystal bonds together the three-dimensional photo-electric electric field near-field scan device that the fiber crystal of composition pops one's head according to fixed crystal orientation,
By electric field near-field scan device, power supply, controller, drive module, three stepper motors, No. three position sensors, signal transacting
Circuit, 485 bus communication modules, host computer, semiconductor laser and optical circuit are formed；The connected mode of above-mentioned part is：
The input voltage of power supply is AC 220 V, and the output of power supply is provided with the positive 5V2A of direct current 24V3A, direct current and direct current bears 5V2A tri-
Road, wherein power supply export direct current 24V3A and bear 5V2A to drive module and three stepper motor power supplies, the positive 5V2A of direct current and direct current and be total to
Power supply is provided with to amplifier uA741, power supply exports the positive 5V2A of direct current to controller, No. three position sensors, semiconductor laser
Powered with signal processing circuit, three stepper motors connect the drive module containing three motor drivers, and controller control should
Drive module, and No. three position sensors are connected to, 905nm wavelength lasers beam is through optical circuit caused by semiconductor laser
The fiber crystal probe being transferred in electric field near-field scan device, the fiber crystal, which is popped one's head in, is reflected back the laser intensity of optical circuit
Controller is sent to by signal processing circuit, this signal is carried out digital-to-analogue conversion and passes through 485 bus communication modules by controller
Host computer is sent to, the data that host computer transmits controller carry out conversion and are shown to graphical window generation 3-D graphic, thus
Complete photo-electric electric field near-field scan instrument allomeric function；Above-mentioned electric field near-field scan device is by two fiber crystals probes, bands
The probe up and down for having scale adjusts arm, circuit board under test, circuit board under test fixed mount, X-axis guide rail, Y-axis guide rail, Z axis guide rail, spy
Head damping firm banking and three shaft mechanical firm bankings are formed, and the connected mode of above-mentioned parts is in the device：One top
Fiber crystal probe be arranged on the front end of the adjustment arm horizontal arm of probe up and down with scale, fiber crystal below another is visited
Head is arranged on the front end of probe damping firm banking, and two fiber crystals probe consistencies from top to bottom, circuit board under test, which is clamped at, to be treated
On slowdown monitoring circuit plate fixed mount, circuit board under test fixed mount is fixed in horizontal X-axis guide rail, and X-axis guide rail is embedded in a vertical left side
It can be moved up and down in the guide groove of right two Y-axis guide rails, the Y-axis guide rail of left and right two is then embedded in positioned at a left side for horizontal plane respectively
It can be moved forward and backward in the guide groove of right two Z axis guide rails, X-axis guide rail, two Y-axis guide rails and two Z axis guide rails are together by spill
Three shaft mechanical firm bankings be fixed as a framework entirety, pop one's head in damping firm banking and three shaft mechanical firm bankings be placed in together
One horizontal plane, but between without any rigid connection, and done damping processing at damping firm banking ground connection of popping one's head in；Above-mentioned photo-electric
Specific installation site of the components described below in electric field near-field scan device in electric field near-field scan instrument be：Three stepper motors point
One end of one end of X-axis guide rail, one end of Y-axis guide rail and Z axis guide rail is not fixed on, and drive module, controller and 485 buses are led to
Letter sequence of modules is installed on inside three shaft mechanical firm bankings, and No. three position sensors are respectively disposed on three stepper motor difference
With the junction of X-axis guide rail, Y-axis guide rail and Z axis guide rail, signal processing circuit, semiconductor laser and optical circuit are placed in
Pop one's head on damping firm banking.
2. photo-electric electric field near-field scan instrument according to claim 1, it is characterised in that：On described two fiber crystal probes
Lower alignment, and the distance between two fiber crystals probe is adjustable, adjustable extent is 1~50 centimetre.
3. photo-electric electric field near-field scan instrument according to claim 1, it is characterised in that：The signal processing circuit is to use
Photomultiplier J1 and U1 chip uA741 amplifiers build circuit, and its composition is, J1 is photomultiplier, 0.01uF electric capacity C1 with
The negative pole end 2 of a termination uA741 amplifiers and J1 2 ends after 100K resistance R2 parallel connections, it is another after electric capacity C1 is in parallel with resistance R2
The output end 6 of one end connection uA741 amplifiers and 2K resistance R5 one end, resistance R5 other ends connection 10K resistance R6 one end, resistance R6
The other end is grounded, and 10K resistance R1 mono- terminates the positive terminal 3 of uA741 amplifiers and J1 1 end, R1 other ends ground connection, and Net1 is
The negative supply access point of the pin of uA741 amplifiers negative voltage 7, the pin of 10 Ohmic resistance R3 mono- termination uA741 amplifiers positive voltage 4, R3 are another
Termination power positive pole+V1,10 Ohmic resistance R4 mono- termination power cathode-V1, the R4 other end and 220uF electric capacity C2 positive poles and
0.01uF electric capacity C3 one end parallel connections are connected to Net1, C2 negative poles, the C3 other ends, 220uF electric capacity C4 negative poles and 0.01uF electric capacity together
C5 one end is grounded together, and C4 positive poles and the C5 other ends connect the pin of uA741 amplifiers positive voltage 4 together.
4. photo-electric electric field near-field scan instrument according to claim 1, it is characterised in that：The probe up and down with scale
The adjustable extent for adjusting arm is 1~50cm, and circuit board under test fixed mount can fix the circuit board under test of 1~50cm width, and X-axis is led
The rail moving range that rail, Y-axis guide rail and Z axis are led is 1~60cm, probe damping firm banking size be 40cm × 40cm ×
10cm, the size of three shaft mechanical firm bankings is 100cm × 80cm × 10cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510684033.7A CN105203855B (en) | 2015-10-20 | 2015-10-20 | Photo-electric electric field near-field scan instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510684033.7A CN105203855B (en) | 2015-10-20 | 2015-10-20 | Photo-electric electric field near-field scan instrument |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105203855A CN105203855A (en) | 2015-12-30 |
| CN105203855B true CN105203855B (en) | 2018-03-16 |
Family
ID=54951638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510684033.7A Expired - Fee Related CN105203855B (en) | 2015-10-20 | 2015-10-20 | Photo-electric electric field near-field scan instrument |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105203855B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106338654A (en) * | 2016-08-19 | 2017-01-18 | 成都全码特时代科技有限公司 | Antenna measurement device |
| CN106093603A (en) * | 2016-08-19 | 2016-11-09 | 成都全码特时代科技有限公司 | Scanning means for antenna measurement |
| CN106093604A (en) * | 2016-08-19 | 2016-11-09 | 成都全码特时代科技有限公司 | A kind of Multi probe antenna scanner |
| CN106644054B (en) * | 2016-12-28 | 2023-12-26 | 一汽-大众汽车有限公司 | Near field noise scanning testing device |
| CN107064834B (en) * | 2017-05-05 | 2020-03-10 | 北京航空航天大学 | Broadband electromagnetic imaging surface signal acquisition system based on light path switching |
| CN107390037B (en) * | 2017-07-06 | 2020-09-25 | 广东曼克维通信科技有限公司 | Antenna near field testing device and method |
| CN108872269B (en) * | 2018-07-06 | 2023-05-26 | 深圳凌波近场科技有限公司 | Near-field electromagnetic wave measuring system and multifunctional near-field electromagnetic wave measuring method |
| CN109085585A (en) * | 2018-09-29 | 2018-12-25 | 厦门大学 | The acquisition of microwave and millimeter wave three-dimensional near-field data and imaging system |
| CN114113804A (en) * | 2020-08-26 | 2022-03-01 | 商飞信息科技（上海）有限公司 | EMC near-field electromagnetic field detection equipment |
| CN113281579B (en) * | 2021-04-28 | 2023-01-24 | 西安理工大学 | Chip packaging electrostatic measurement sensor based on F-P interference principle |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144196A (en) * | 1997-07-23 | 2000-11-07 | Nec Corporation | Magnetic field measuring apparatus and apparatus for measuring spatial resolution of magnetic field detector |
| CN1687714A (en) * | 2005-04-28 | 2005-10-26 | 上海理工大学 | Instrument for testing response characteristic of detector surface, and testing method thereof |
| CN1710434A (en) * | 2005-06-22 | 2005-12-21 | 湖南科技大学 | Electromagnetic detector for electromagnetic compatible diagnostic test in vehicle |
| CN2816825Y (en) * | 2005-07-19 | 2006-09-13 | 中国舰船研究设计中心 | Microwave peak-field-density detector |
| CN101750546A (en) * | 2009-12-28 | 2010-06-23 | 北京航空航天大学 | Self-adaptive scanning device with electromagnetic compatibility for near-field test |
| CN201681125U (en) * | 2009-12-28 | 2010-12-22 | 北京航空航天大学 | Electromagnetic compatibility adaptive scanning device for test of near field |
| CN102162828A (en) * | 2010-12-28 | 2011-08-24 | 哈尔滨工业大学 | Device and method for qualitatively detecting PCB (printed circuit board) board electromagnetic interference radiation performance |
| CN103941106A (en) * | 2014-04-29 | 2014-07-23 | 工业和信息化部电子第五研究所 | Electromagnetic field near-field scanning device and scanning method |
| CN203950027U (en) * | 2014-07-15 | 2014-11-19 | 北京无线电计量测试研究所 | A kind of fault diagnosis near field probes calibrating installation |
| CN204422737U (en) * | 2015-03-09 | 2015-06-24 | 华北电力大学 | A kind of three-dimensional optical passage electromagnetic field motion scan measuring system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0658970A (en) * | 1992-08-11 | 1994-03-04 | Matsushita Electric Ind Co Ltd | Both side jamming measuring apparatus |
| JP2001208786A (en) * | 2000-01-28 | 2001-08-03 | Anritsu Corp | Near field measurement system |
| JP2006162290A (en) * | 2004-12-02 | 2006-06-22 | Sharp Corp | Magnetic field measuring apparatus, current measuring apparatus provided with it, and electrical field measuring apparatus |
| JP2011169615A (en) * | 2010-02-16 | 2011-09-01 | Fujitsu Semiconductor Ltd | Quasi-electrostatic field analyzer and quasi-electrostatic field analysis method |
-
2015
- 2015-10-20 CN CN201510684033.7A patent/CN105203855B/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144196A (en) * | 1997-07-23 | 2000-11-07 | Nec Corporation | Magnetic field measuring apparatus and apparatus for measuring spatial resolution of magnetic field detector |
| CN1687714A (en) * | 2005-04-28 | 2005-10-26 | 上海理工大学 | Instrument for testing response characteristic of detector surface, and testing method thereof |
| CN1710434A (en) * | 2005-06-22 | 2005-12-21 | 湖南科技大学 | Electromagnetic detector for electromagnetic compatible diagnostic test in vehicle |
| CN2816825Y (en) * | 2005-07-19 | 2006-09-13 | 中国舰船研究设计中心 | Microwave peak-field-density detector |
| CN101750546A (en) * | 2009-12-28 | 2010-06-23 | 北京航空航天大学 | Self-adaptive scanning device with electromagnetic compatibility for near-field test |
| CN201681125U (en) * | 2009-12-28 | 2010-12-22 | 北京航空航天大学 | Electromagnetic compatibility adaptive scanning device for test of near field |
| CN102162828A (en) * | 2010-12-28 | 2011-08-24 | 哈尔滨工业大学 | Device and method for qualitatively detecting PCB (printed circuit board) board electromagnetic interference radiation performance |
| CN103941106A (en) * | 2014-04-29 | 2014-07-23 | 工业和信息化部电子第五研究所 | Electromagnetic field near-field scanning device and scanning method |
| CN203950027U (en) * | 2014-07-15 | 2014-11-19 | 北京无线电计量测试研究所 | A kind of fault diagnosis near field probes calibrating installation |
| CN204422737U (en) * | 2015-03-09 | 2015-06-24 | 华北电力大学 | A kind of three-dimensional optical passage electromagnetic field motion scan measuring system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105203855A (en) | 2015-12-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105203855B (en) | Photo-electric electric field near-field scan instrument | |
| CN101750546B (en) | Self-adaptive scanning device with electromagnetic compatibility for near-field test | |
| CN103197147B (en) | A kind of multi-functional contact resistance automatic measuring instrument of solar cell and measuring system thereof | |
| CN213875991U (en) | Electron beam control coil magnetic field detection system | |
| CN206330546U (en) | A kind of full-automatic image measurer | |
| US10828785B2 (en) | Integrated measurement and micromechanical positioning apparatus for real-time test control | |
| CN105423947A (en) | Optical three-dimensional imaging device and imaging method thereof | |
| CN105445643A (en) | Full-automatic prober image positioning system | |
| CN201681125U (en) | Electromagnetic compatibility adaptive scanning device for test of near field | |
| CN112871725A (en) | Automatic test marking system and method for semiconductor laser | |
| KR102251805B1 (en) | Rigidity test device of semiconductor inspection equipment module | |
| CN107743583A (en) | For the equipment, method and computer program product at least tested to the side surface of semiconductor device | |
| CN107860776A (en) | A kind of defect of lens detection means and method | |
| US3348057A (en) | Method and apparatus for checking the straightness of machine tool ways and the like | |
| CN205192445U (en) | Optics three -dimensional imaging device | |
| CN207832690U (en) | A kind of defect of lens detection device | |
| CN220171224U (en) | Automatic measuring probe and device for three-dimensional magnetic field | |
| CN205246712U (en) | Full -automatic probe station image positioner | |
| CN115078523B (en) | Magnetic field imaging device facing magnetic material detection | |
| CN207851149U (en) | Signal measurement system | |
| CN103513046B (en) | Micro biological sample measurement system | |
| CN101097169A (en) | High precision ray radiation standard seeker roomage response homogeneity measuring systems and method thereof | |
| CN211426245U (en) | Industrial OCT detection device based on space free distribution light path | |
| CN114624636A (en) | Electron beam control coil magnetic field detection system and detection method thereof | |
| CN211426242U (en) | Moving type industrial OCT detection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180316 |