CN105203855A - Photoelectric near electric field scanner - Google Patents
Photoelectric near electric field scanner Download PDFInfo
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- CN105203855A CN105203855A CN201510684033.7A CN201510684033A CN105203855A CN 105203855 A CN105203855 A CN 105203855A CN 201510684033 A CN201510684033 A CN 201510684033A CN 105203855 A CN105203855 A CN 105203855A
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- 230000005684 electric field Effects 0.000 title claims abstract description 89
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
The invention provides a photoelectric near electric field scanner, and relates to a system used for measuring magnetic variable and electrical variable, in particular to a three-dimensional photoelectric near electric field scanning device equipped with an upper optical fiber crystal probe and a lower optical fiber crystal probe. The photoelectric near electric field scanner comprises the near electric field scanning device, a power supply, a controller, a drive module, three stepping motors, three position sensors, a signal processing circuit, a 485 bus communication module, a host computer, a semiconductor laser and an optical loop, and can be used for scanning the near field intensities of the front and back side electric fields of a circuit board to be measured simultaneously, so as to avoid secondary interference and radiation on a component to be measured during scanning, and overcome the defects that in the prior art, space electromagnetic interference introduction, observation, recording and data analysis of an electric field detect system are complex, vibration generates during a moving process, the control mode is not flexible enough, and the measuring accuracy is low.
Description
Technical field
Technical scheme of the present invention relates to the system measuring magnetic variable and electric variable, specifically photo-electric electric field near-field scan instrument.
Background technology
The electromagnetic compatibility of circuit board is link very important after electronic technology develops into the high speed epoch, the various electromagnetic radiation that circuit board in work produces can on its ambient electron element and circuit generation impact to a certain degree, in components and parts selection and board design process, EMC Design is very important step, and the test and evaluation of circuit board electromagnetic radiation, the electromagnetic intensity testing apparatus needing specialty has been come.At present in the world the technology of comparative maturity be the detecting plate of probe or the miniature antenna array composition utilizing miniature antenna to make to detect electric field, the faint model captured by miniature antenna carries out conditioning amplification, obtains corresponding electric field intensity value; Another kind method utilizes hall principle, adopt and magnetic field intensity is gathered to the special material making probe of magnetic-field-sensitive, all need to apply external voltage or electric current on probe with upper type, inherently introduce spatial electromagnetic interference, and the electromagnetic radiation under different operating condition needs the probe of different parameters to complete measurement, observed and recorded and data analysis are all comparatively complicated.
CN104635063A discloses a kind of 3 D electromagnetic field translation scan optical measuring system and electromagnetic field assay method, CN204422737U reports a kind of three-dimensional optical passage electromagnetic field motion scan measuring system, both contents are similar, the following defect all existed: 1. optical sensor is installed on transfer arm, the vibrations produced in moving process have fatal impact to fiber middle light signal collection; 2. control mode underaction in Survey control; 3. measuring accuracy is not high.
Summary of the invention
Technical matters to be solved by this invention is: provide photo-electric electric field near-field scan instrument, the defect that the vibrations being the three-dimensional light electric-type electric field near-field scan device that a kind of employing is provided with upper and lower two fiber crystal probe, the electric field detecting system overcoming prior art inherently introduces spatial electromagnetic interference, observed and recorded and data analysis is all very complicated, produce in moving process, control mode underaction and measuring accuracy are not high.
The present invention solves this technical problem adopted technical scheme: photo-electric electric field near-field scan instrument, be the three-dimensional light electric-type electric field near-field scan device that a kind of employing is provided with upper and lower two fiber crystal probe, be made up of electric field near-field scan device, power supply, controller, driver module, three stepper motors, No. three position transducers, signal processing circuit, 485 bus communication modules, host computer, semiconductor laser and optical circuits, the connected mode of above-mentioned parts is: the input voltage of power supply is AC 220 V, the output of power supply is provided with direct current 24V3A, the positive 5V2A of direct current and direct current bear 5V2A tri-tunnel, wherein power supply output direct current 24V3A powers to driver module and three stepper motors, the positive 5V2A of direct current and direct current are born 5V2A and are jointly provided power supply to amplifier uA741, power supply exports the positive 5V2A of direct current to controller, No. three position transducers, semiconductor laser and signal processing circuit are powered, three stepper motors connect the driver module containing three motor drivers, controller controls this driver module, and be connected to No. three position transducers, the 905nm wavelength laser bundle that semiconductor laser produces is transferred to the fiber crystal probe in electric field near-field scan device through optical circuit, the laser intensity that this fiber crystal probe is reflected back optical circuit is sent to controller through signal processing circuit, this signal is carried out digital-to-analog conversion and sends to host computer through 485 bus communication modules by controller, the data that controller transmits by host computer are carried out conversion and are shown to graphical window generating three-dimensional figures shape, complete photo-electric electric field near-field scan instrument allomeric function thus, above-mentioned electric field near-field scan device is popped one's head in by two fiber crystal, with the adjustment of the probe up and down arm of scale, circuit board under test, circuit board under test fixed mount, X-axis guide rail, Y-axis guide rail, Z axis guide rail, probe damping firm banking and three shaft mechanical firm bankings are formed, in this device, the connected mode of above-mentioned parts is: the fiber crystal probe of a top is arranged on the front end of the adjustment of the probe up and down arm horizontal arm of band scale, fiber crystal probe below another is arranged on the front end of probe damping firm banking, two fiber crystal probe consistencies from top to bottom, circuit board under test is clamped on circuit board under test fixed mount, circuit board under test fixed mount is fixed on the X-axis guide rail of level, can move up and down in the guide-track groove that X-axis guide rail is embedded in vertical two the Y-axis guide rails in left and right, two the Y-axis guide rails in left and right then can be moved forward and backward by the guide-track groove being embedded in two the Z axis guide rails in left and right being arranged in surface level respectively, X-axis guide rail, two Y-axis guide rails are fixed as a framework entirety by three shaft mechanical firm bankings of spill together with two Z axis guide rails, probe damping firm banking and three shaft mechanical firm bankings are placed in same level, but between without any rigid connection, and damping process has been done at probe damping firm banking ground connection place, the concrete installation site of following parts in electric field near-field scan device in above-mentioned photo-electric electric field near-field scan instrument is: three stepper motors are separately fixed at one end of one end of X-axis guide rail, one end of Y-axis guide rail and Z axis guide rail, it is inner that driver module, controller and 485 bus communication sequence of modules are installed on three shaft mechanical firm bankings, No. three position transducers be placed in respectively three stepper motors respectively with the junction of X-axis guide rail, Y-axis guide rail and Z axis guide rail, signal processing circuit, semiconductor laser and optical circuit are placed on probe damping firm banking.
Above-mentioned photo-electric electric field near-field scan instrument, described fiber crystal probe to be bonded together according to fixing crystal orientation by optical fiber and gallium arsenide cubic crystal and forms.
Above-mentioned photo-electric electric field near-field scan instrument, described signal processing circuit adopts photomultiplier J1 and U1 chip uA741 amplifier to build circuit, its formation is, J1 is photomultiplier, the negative pole end 2 of a termination uA741 amplifier after 0.01uF electric capacity C1 is in parallel with 100K resistance R2 and 2 ends of J1, electric capacity C1 is connected output terminal 6 and 2K resistance R5 one end of uA741 amplifier with the other end after resistance R2 parallel connection, the resistance R5 other end connects 10K resistance R6 one end, resistance R6 other end ground connection, the positive terminal 3 of 10K resistance R1 mono-termination uA741 amplifier and 1 end of J1, R1 other end ground connection, Net1 is the negative supply access point of uA741 amplifier negative voltage 7 pin, 10 Ohmage R3 mono-termination uA741 amplifier positive voltage 4 pin, another termination positive source of R3+V1, 10 Ohmage R4 mono-termination power cathode-V1, the R4 other end is connected to Net1 with 220uF electric capacity C2 positive pole together with 0.01uF electric capacity C3 one end parallel connection, C2 negative pole, the C3 other end, 220uF electric capacity C4 negative pole ground connection together with 0.01uF electric capacity C5 one end, C4 positive pole connects uA741 amplifier positive voltage 4 pin together with the C5 other end.
Above-mentioned photo-electric electric field near-field scan instrument, described two fiber crystal probe consistency from top to bottom, and distance between two fiber crystal probes is adjustable, adjustable extent is 1 ~ 50 centimetre.
Above-mentioned photo-electric electric field near-field scan instrument, the adjustable extent of the described adjustment of the probe up and down arm with scale is 1 ~ 50cm, circuit board under test fixed mount can fix the circuit board under test of 1 ~ 50cm width, the rail moving range that X-axis guide rail, Y-axis guide rail and Z axis are led is 1 ~ 60cm, probe damping firm banking is of a size of 40cm × 40cm × 10cm, and three shaft mechanical firm bankings are of a size of 100cm × 80cm × 10cm.
Above-mentioned photo-electric electric field near-field scan instrument, the model of the photomultiplier J1 that described signal processing circuit adopts is electrician's board GDB-2.
Above-mentioned photo-electric electric field near-field scan instrument, described power acquisition inscription latitude 24V and positive and negative 5V multi-output switch power source, controller adopts STM32F103ZET6, driver module adopts ZD-6717-V3 brush DC driver, three stepper motors adopt 57HS09 two-phase stepping motor, No. three position transducers adopt NJK-5001C proximity Hall switch, 485 bus communication modules adopt MAX1487 chip, host computer adopts can the smooth mini desktop computing machine running WindowsXP system, semiconductor laser adopts the semiconductor laser of LSR-905nm and 500mW, optical circuit comprises collimation lens, condenser, spectroscope, quarter-wave plate and reflective mirror, these parts are all obtained by known approach.
Above-mentioned photo-electric electric field near-field scan instrument, the adjustment of the probe up and down arm with scale in described electric field near-field scan device, circuit board under test, circuit board under test fixed mount, X-axis guide rail, Y-axis guide rail, Z axis guide rail, probe damping firm banking and three shaft mechanical firm bankings are all that those skilled in the art can processing and fabricating.
Above-mentioned photo-electric electric field near-field scan instrument, the installation of all parts and connected mode are that those skilled in the art can grasp.
Above-mentioned photo-electric electric field near-field scan instrument, its method run is: after device powers on, electric field near-field scan device is in reference position, user is according to the adjustment of the probe up and down arm of actual conditions adjustment belt scale, adjust position and the distance of upper and lower fiber crystal probe, and scanning starting position is set in host computer, sweep limit and scanning accuracy, Z axis guide rail sweep limit in setting value should be less than the space length of two fiber crystal probes, user data is sent to controller by 485 bus communication modules by host computer, controller is according to these Data Control driver module Driving Stepping Motors, circuit board under test is moved to relevant position and starts scanning sequence, when after the bounds scanning setting, controller controls driver module Driving Stepping Motor, circuit board under test fixed mount and circuit board under test are returned to reference position and waits for scan command next time.
The invention has the beneficial effects as follows: compared with prior art, outstanding substantive distinguishing features of the present invention is: the present invention adopts the three-dimensional electric field near-field scan device of two fiber crystal probe, based on three-axis stepping motor control system, upper and lower two fiber crystal probe is installed, circuit board under test tow sides electric field near-field field strength can be scanned simultaneously.Fiber crystal scanning probe to data by after single-chip microcomputer process through uploading to host computer by 485 buses, these data carry out processing, show and storing in host computer.Data acquisition, Electric Machine Control and host computer form 485 structures of one master and multiple slaves, user sets these parameters of reference position, sweep limit and scanning accuracy by host computer, after having set, various parameter is sent to controller, controller receives and controls driver module Driving Stepping Motor according to setting value and move circuit board under test to relevant position afterwards, and determines sweep limit, step distance and precision.
Compared with prior art, marked improvement of the present invention is as follows:
(1) photo-electric electric field near-field scan instrument of the present invention adopts two fiber crystal probe can effectively avoid scanister to the destruction of former electric field, the circuit board pros and cons data collected show at host computer simultaneously, three-dimensional field intensity data are more vivid, pros and cons near field is scanned simultaneously and is shortened sweep time with variable-resolution, and reference position and scope setting make scanning convenient more flexibly, the more convenient user of function that historical data is checked uses.
(2) photo-electric electric field near-field scan instrument of the present invention is the three-dimensional electric field scanister without secondary interference, can carry out radiationless scanning to UUT.
(3) photo-electric electric field near-field scan instrument of the present invention is a kind of visual gated sweep device, can scan the three-dimensional electric field near-field field strength on the positive and negative surface of circuit board under test flexibly.
(4) photo-electric electric field near-field scan instrument of the present invention can scan stock size alive circuit plate pros and cons simultaneously, and generates electric field near field 3-D scanning figure.
(5) in prior art, optical sensor is installed on transfer arm, and the impact of the vibrations produced in moving process on fiber middle light signal collection is fatal, and the present invention adopts isolation probe damping firm banking to overcome this defect.
(6) existing patented technology control mode in Survey control is dumb, and the scanning system in the present invention can input sweep limit, scanning accuracy and any reference position, is greatly user-friendly to.
(7) measuring accuracy of the present invention is higher than existing patented technology.
(8) the present invention adopts two fiber crystal probe to achieve omnibearing 3 D stereo near-field scan, shortens sweep time.
In a word, the defect that the vibrations that the electric field detecting system that instant invention overcomes prior art inherently introduces spatial electromagnetic interference, observed and recorded and data analysis is all very complicated, produce in moving process, control mode underaction and measuring accuracy are not high.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is the main assembly schematic block diagram of photo-electric electric field near-field scan instrument of the present invention.
Fig. 2 is the formation schematic diagram of photo-electric electric field near-field scan instrument of the present invention and electric field near-field scan device wherein.
Fig. 3 is that the signal processing circuit in photo-electric electric field near-field scan instrument of the present invention forms schematic diagram.
In figure, 1. power supply, 2. controller, 3. driver module, 4. stepper motor, 5. position transducer, 6. signal processing circuit, 7.485 bus communication modules, 8. host computer, 9. semiconductor laser, 10. optical circuit, 11. fiber crystal probes, 12. electric field near-field scan devices, 13. circuit board under test, 14. circuit board under test fixed mounts, 15.X axis rail, 16.Y axis rail, 17.Z axis rail, 18. probe damping firm bankings, 19. 3 shaft mechanical firm bankings, the adjustment of the probe up and down arm of 20. band scales.
Embodiment
Embodiment illustrated in fig. 1ly show, the overall formation of photo-electric electric field near-field scan instrument of the present invention is: comprise electric field near-field scan device 12, power supply 1, controller 2, driver module 3, three stepper motor 4, No. three position transducers 5, signal processing circuit 6,485 bus communication module 7, host computer 8, semiconductor laser 9 and optical circuit 10, the connected mode of above-mentioned parts is: the input voltage of power supply 1 is AC 220 V, the output of power supply 1 is provided with direct current 24V3A, the positive 5V2A of direct current and direct current bear 5V2A tri-tunnel, wherein power supply 1 exports direct current 24V3A and powers to driver module 3 and three stepper motors 4, power supply 1 exports the positive 5V2A of direct current and direct current and bears 5V2A and power to amplifier uA741, power supply 1 exports the positive 5V2A of direct current to controller 2, No. three position transducers 5, semiconductor laser 9 and signal processing circuit 6 are powered, three stepper motors 4 connect the driver module 3 containing three motor drivers, controller 2 controls driver module 3, and be connected to No. three position transducers 5, the fiber crystal probe 11 that the 905nm wavelength laser bundle that semiconductor laser 9 produces is transferred in three-dimensional electric field near-field scan device 12 through optical circuit 10 (does not show in Fig. 1, see Fig. 2), this fiber crystal probe 11 (does not show in Fig. 1, see Fig. 2) laser intensity that is reflected back optical circuit 10 is sent to controller 2 through signal processing circuit 6, this signal is carried out digital-to-analog conversion and sends to host computer 8 through 485 bus communication modules 7 by controller 2, the data that controller 2 transmits by host computer 8 are carried out conversion and are shown to graphical window generating three-dimensional figures shape, complete the allomeric function of photo-electric electric field near-field scan instrument thus.
Embodiment illustrated in fig. 2ly show, the formation of the electric field near-field scan device 12 in photo-electric electric field near-field scan instrument of the present invention is: comprise two fiber crystal probes 11, the adjustment of probe up and down arm 20, circuit board under test 13, circuit board under test fixed mount 14, X-axis guide rail 15, Y-axis guide rail 16, Z axis guide rail 17, probe damping firm banking 18 and three shaft mechanical firm bankings 19 with scale, the connected mode of above-mentioned parts is: the fiber crystal probe 11 of a top is arranged on the front end of the adjustment of probe up and down arm 20 horizontal arm of band scale, fiber crystal probe 11 below another is arranged on the front end of probe damping firm banking 18, two fiber crystal are popped one's head in 11 consistencies from top to bottom, circuit board under test 13 is clamped on circuit board under test fixed mount 14, circuit board under test fixed mount 14 is fixed on the X-axis guide rail 15 of level, X-axis guide rail 15 is fixed with vertical two, left and right Y-axis guide rail 16, 16, the Y-axis guide rail in two, left and right is respectively arranged in the guide-track groove of two the Z axis guide rails 17 in left and right, X-axis guide rail 15, two Y-axis guide rails 16 are fixed as a framework entirety by three shaft mechanical firm bankings 19 of spill together with two Z axis guide rails 17, probe damping firm banking 18 and three shaft mechanical firm bankings 19 are placed in same level, but between without any rigid connection, and damping process has been done at probe damping firm banking 18 ground connection place, No. three position transducers 5 are arranged on three stepper motors 4 X-axis guide rail 15 respectively respectively, the junction of Y-axis guide rail 16 and Z axis guide rail 17 is also connected to controller 2.
Embodiment illustrated in fig. 3ly to show, signal processing circuit in photo-electric electric field near-field scan instrument of the present invention adopts photomultiplier J1 and U1 chip uA741 amplifier to build circuit, its formation is, J1 is photomultiplier, the negative pole end 2 of a termination uA741 amplifier after 0.01uF electric capacity C1 is in parallel with 100K resistance R2 and 2 ends of J1, electric capacity C1 is connected output terminal 6 and 2K resistance R5 one end of uA741 amplifier with the other end after resistance R2 parallel connection, the resistance R5 other end connects 10K resistance R6 one end, resistance R6 other end ground connection, the positive terminal 3 of 10K resistance R1 mono-termination uA741 amplifier and 1 end of J1, R1 other end ground connection, Net1 is the negative supply access point of uA741 amplifier negative voltage 7 pin, 10 Ohmage R3 mono-termination uA741 amplifier positive voltage 4 pin, another termination positive source of R3+V1, 10 Ohmage R4 mono-termination power cathode-V1, the R4 other end is connected to Net1 with 220uF electric capacity C2 positive pole together with 0.01uF electric capacity C3 one end parallel connection, C2 negative pole, the C3 other end, 220uF electric capacity C4 negative pole ground connection together with 0.01uF electric capacity C5 one end, C4 positive pole connects uA741 amplifier positive voltage 4 pin together with the C5 other end.
Embodiment
The photo-electric electric field near-field scan instrument of the present embodiment is formed according to Fig. 1, Fig. 2 and assembling embodiment illustrated in fig. 3, comprise electric field near-field scan device 12, power supply 1, controller 2, driver module 3, three stepper motor 4, No. three position transducers 5, signal processing circuit 6,485 bus communication module 7, host computer 8, semiconductor laser 9 and optical circuit 10, the input voltage of power supply 1 is AC 220 V, the output of power supply 1 is provided with direct current 24V3A, the positive 5V2A of direct current and direct current bear 5V2A tri-tunnel, wherein power supply 1 exports direct current 24V3A and powers to driver module 3 and three stepper motors 4, power supply 1 exports the positive 5V2A of direct current and direct current and bears 5V2A and power to amplifier uA741, power supply 1 exports 5V2A to controller 2, No. three position transducers 5, semiconductor laser 9 and signal processing circuit 6 are powered, three stepper motors 4 connect the driver module 3 containing three motor drivers, controller 2 controls driver module 3, and be connected to No. three position transducers 5, the 905nm wavelength laser bundle that semiconductor laser 9 produces is transferred to the fiber crystal probe 11 in three-dimensional electric field near-field scan device 12 through optical circuit 10, the laser intensity that this fiber crystal probe 11 is reflected back optical circuit 10 is sent to controller 6 through signal processing circuit 6, this signal is carried out digital-to-analog conversion and sends to host computer 8 through 485 bus communication modules 7 by controller 2, the data that controller 2 transmits by host computer 8 are carried out conversion and are shown to graphical window generating three-dimensional figures shape, complete the allomeric function of photo-electric electric field near-field scan instrument thus, above-mentioned electric field near-field scan device 12 pops one's head in 11 by two fiber crystal, with the adjustment of the probe up and down arm 20 of scale, circuit board under test 13, circuit board under test fixed mount 14, X-axis guide rail 15, Y-axis guide rail 16, Z axis guide rail 17, probe damping firm banking 18 and three shaft mechanical firm bankings 19 are formed, in this device, the connected mode of above-mentioned parts is: the fiber crystal probe 11 of a top is arranged on the front end of the adjustment of probe up and down arm 20 horizontal arm of band scale, fiber crystal probe 11 below another is arranged on the front end of probe damping firm banking 18, two fiber crystal are popped one's head in 11 consistencies from top to bottom, circuit board under test 13 is clamped on circuit board under test fixed mount 14, circuit board under test fixed mount 14 is fixed on the X-axis guide rail 15 of level, can move up and down in the guide-track groove that X-axis guide rail 15 is embedded in vertical two the Y-axis guide rails 16 in left and right, two 16, the Y-axis guide rails in left and right can be moved forward and backward by the guide-track groove being embedded in two the Z axis guide rails 17 in left and right being arranged in surface level respectively, X-axis guide rail 15, two Y-axis guide rails 16 are fixed as a framework entirety by three shaft mechanical firm bankings 19 of spill together with two Z axis guide rails 17, probe damping firm banking 18 and three shaft mechanical firm bankings 19 are placed in same level, but between without any rigid connection, and damping process has been done at probe damping firm banking 18 ground connection place, the concrete installation site of following parts in electric field near-field scan device 12 in above-mentioned photo-electric electric field near-field scan instrument is: three stepper motors 4 are separately fixed at one end of X-axis guide rail 15, one end of Y-axis guide rail 16 and one end of Z axis guide rail 17, driver module 3, it is inner that controller 2 and 485 bus communication module 7 order is installed on three shaft mechanical firm bankings 19, No. three position transducers 5 be placed in respectively three stepper motors 4 respectively with X-axis guide rail 15, the junction of Y-axis guide rail 16 and Z axis guide rail 17, signal processing circuit 6, semiconductor laser 9 and optical circuit 10 are placed on probe damping firm banking 19.
In the photo-electric electric field near-field scan instrument of the present embodiment, controller 2 controls start and stop and the rotating that driver module 3 realizes three stepper motors 4; No. three position transducers 5 be arranged on respectively three stepper motors 4 respectively X-axis guide rail 15, Y-axis guide rail 16 and Z axis guide rail 17 junction and be connected to controller 2, for detecting the initial position of electric field scanning device 12; Signal processing circuit 6 is the circuit being carried out by photosignal changing, nurse one's health and amplifying.
In the electric field near-field scan device 12 of the present embodiment, the adjustment of probe up and down arm 20 with scale can according to actual needs with the position of manual adjustments X-axis guide rail 15, circuit board under test fixed mount 14 is with spring assembly, can automatically clamp circuit board under test 13, X-axis guide rail 15, Y-axis guide rail 16 and Z axis guide rail 17 drive leading screw to move by three stepper motors 4 respectively, in order to avoid the vibrations of mechanical arm when stepper motor 4 runs are on fiber crystal probe 11 and the impact of optical circuit 10, without any rigid connection between probe damping firm banking 18 and three shaft mechanical firm bankings 19, and damping process has been done at probe damping firm banking 18 ground connection place.
In the photo-electric electric field near-field scan instrument of the present embodiment, distance between two fiber crystal probes about 11 is 25cm, adjustable extent with the adjustment of the probe up and down arm 20 of scale is 25cm, circuit board under test fixed mount 14 can fix the circuit board under test 13 of 25cm width, the rail moving range that X-axis guide rail 15, Y-axis guide rail 16 and Z axis lead 17 is 30cm, probe damping firm banking 18 is of a size of 40cm × 40cm × 10cm, and three shaft mechanical firm bankings 19 are of a size of 100cm × 80cm × 10cm.
In the photo-electric electric field near-field scan instrument of the present embodiment, described fiber crystal probe to be bonded together according to fixing crystal orientation by optical fiber and gallium arsenide cubic crystal and forms.
In the photo-electric electric field near-field scan instrument of the present embodiment, the model of the photomultiplier J1 that described signal processing circuit adopts is electrician's board GDB-2.
In the photo-electric electric field near-field scan instrument of the present embodiment, described power acquisition inscription latitude 24V and positive and negative 5V multi-output switch power source, controller adopts STM32F103ZET6, driver module adopts ZD-6717-V3 brush DC driver, three stepper motors adopt 57HS09 two-phase stepping motor, No. three position transducers adopt NJK-5001C proximity Hall switch, 485 bus communication modules adopt MAX1487 chip, host computer adopts can the smooth mini desktop computing machine running WindowsXP system, semiconductor laser adopts LSR-905nm, 500mW semiconductor laser and optical circuit comprise collimation lens, condenser, spectroscope, quarter-wave plate, reflective mirror, these parts are all obtained by known approach.
The photo-electric electric field near-field scan instrument of the present embodiment, the adjustment of the probe up and down arm 20 with scale in described electric field near-field scan device, circuit board under test 13, circuit board under test fixed mount 14, X-axis guide rail 15, Y-axis guide rail 16, Z axis guide rail 17, probe damping firm banking 18 and three shaft mechanical firm bankings 19 are all that those skilled in the art can processing and fabricating.
The photo-electric electric field near-field scan instrument of the present embodiment, the installation of all parts and connected mode are that those skilled in the art can grasp.
The photo-electric electric field near-field scan instrument of the present embodiment, its method run is: after device powers on, electric field near-field scan device 12 is in reference position, user is according to the adjustment of the probe up and down arm 20 of actual conditions adjustment belt scale, adjust position and the distance of upper and lower fiber crystal probe 11, and scanning starting position is set in host computer 8, sweep limit and scanning accuracy, Z axis guide rail 17 sweep limit in setting value should be less than the space length of two fiber crystal probes 11, user data is sent to controller 2 by 485 bus communication modules 7 by host computer 8, controller 2 is according to these Data Control driver module 3 Driving Stepping Motors 4, circuit board under test 13 is moved to relevant position and starts scanning sequence, when after the bounds scanning setting, controller 2 controls driver module 4 Driving Stepping Motor 4, circuit board under test fixed mount 14 and circuit board under test 13 are returned to reference position and waits for scan command next time.
Embodiment 2
In the photo-electric electric field near-field scan instrument of the present embodiment, except the distance between two fiber crystal probes about 11 is 1cm, adjustable extent with the adjustment of the probe up and down arm 20 of scale is 1cm, circuit board under test fixed mount 14 can fix the circuit board under test 13 of 1cm width, the rail moving range that X-axis guide rail 15, Y-axis guide rail 16 and Z axis lead 17 is outside 1cm, and other are with embodiment 1.
Embodiment 3
In the photo-electric electric field near-field scan instrument of the present embodiment, except the distance between two fiber crystal probes about 11 is 50cm, adjustable extent with the adjustment of the probe up and down arm 20 of scale is 50cm, circuit board under test fixed mount 14 can fix the circuit board under test 13 of 50cm width, the rail moving range that X-axis guide rail 15, Y-axis guide rail 16 and Z axis lead 17 is outside 60cm, and other are with embodiment 1.
Claims (5)
1. photo-electric electric field near-field scan instrument, it is characterized in that: be the three-dimensional light electric-type electric field near-field scan device that a kind of employing is provided with upper and lower two fiber crystal probe, be made up of electric field near-field scan device, power supply, controller, driver module, three stepper motors, No. three position transducers, signal processing circuit, 485 bus communication modules, host computer, semiconductor laser and optical circuits, the connected mode of above-mentioned parts is: the input voltage of power supply is AC 220 V, the output of power supply is provided with direct current 24V3A, the positive 5V2A of direct current and direct current bear 5V2A tri-tunnel, wherein power supply output direct current 24V3A powers to driver module and three stepper motors, the positive 5V2A of direct current and direct current are born 5V2A and are jointly provided power supply to amplifier uA741, power supply exports the positive 5V2A of direct current to controller, No. three position transducers, semiconductor laser and signal processing circuit are powered, three stepper motors connect the driver module containing three motor drivers, controller controls this driver module, and be connected to No. three position transducers, the 905nm wavelength laser bundle that semiconductor laser produces is transferred to the fiber crystal probe in electric field near-field scan device through optical circuit, the laser intensity that this fiber crystal probe is reflected back optical circuit is sent to controller through signal processing circuit, this signal is carried out digital-to-analog conversion and sends to host computer through 485 bus communication modules by controller, the data that controller transmits by host computer are carried out conversion and are shown to graphical window generating three-dimensional figures shape, complete photo-electric electric field near-field scan instrument allomeric function thus, above-mentioned electric field near-field scan device is popped one's head in by two fiber crystal, with the adjustment of the probe up and down arm of scale, circuit board under test, circuit board under test fixed mount, X-axis guide rail, Y-axis guide rail, Z axis guide rail, probe damping firm banking and three shaft mechanical firm bankings are formed, in this device, the connected mode of above-mentioned parts is: the fiber crystal probe of a top is arranged on the front end of the adjustment of the probe up and down arm horizontal arm of band scale, fiber crystal probe below another is arranged on the front end of probe damping firm banking, two fiber crystal probe consistencies from top to bottom, circuit board under test is clamped on circuit board under test fixed mount, circuit board under test fixed mount is fixed on the X-axis guide rail of level, can move up and down in the guide-track groove that X-axis guide rail is embedded in vertical two the Y-axis guide rails in left and right, two the Y-axis guide rails in left and right then can be moved forward and backward by the guide-track groove being embedded in two the Z axis guide rails in left and right being arranged in surface level respectively, X-axis guide rail, two Y-axis guide rails are fixed as a framework entirety by three shaft mechanical firm bankings of spill together with two Z axis guide rails, probe damping firm banking and three shaft mechanical firm bankings are placed in same level, but between without any rigid connection, and damping process has been done at probe damping firm banking ground connection place, the concrete installation site of following parts in electric field near-field scan device in above-mentioned photo-electric electric field near-field scan instrument is: three stepper motors are separately fixed at one end of one end of X-axis guide rail, one end of Y-axis guide rail and Z axis guide rail, it is inner that driver module, controller and 485 bus communication sequence of modules are installed on three shaft mechanical firm bankings, No. three position transducers be placed in respectively three stepper motors respectively with the junction of X-axis guide rail, Y-axis guide rail and Z axis guide rail, signal processing circuit, semiconductor laser and optical circuit are placed on probe damping firm banking.
2. photo-electric electric field near-field scan instrument according to claim 1, is characterized in that: described fiber crystal probe to be bonded together according to fixing crystal orientation by optical fiber and gallium arsenide cubic crystal and forms.
3. photo-electric electric field near-field scan instrument according to claim 1, it is characterized in that: described signal processing circuit adopts photomultiplier J1 and U1 chip uA741 amplifier to build circuit, its formation is, J1 is photomultiplier, the negative pole end 2 of a termination uA741 amplifier after 0.01uF electric capacity C1 is in parallel with 100K resistance R2 and 2 ends of J1, electric capacity C1 is connected output terminal 6 and 2K resistance R5 one end of uA741 amplifier with the other end after resistance R2 parallel connection, the resistance R5 other end connects 10K resistance R6 one end, resistance R6 other end ground connection, the positive terminal 3 of 10K resistance R1 mono-termination uA741 amplifier and 1 end of J1, R1 other end ground connection, Net1 is the negative supply access point of uA741 amplifier negative voltage 7 pin, 10 Ohmage R3 mono-termination uA741 amplifier positive voltage 4 pin, another termination positive source of R3+V1, 10 Ohmage R4 mono-termination power cathode-V1, the R4 other end is connected to Net1 with 220uF electric capacity C2 positive pole together with 0.01uF electric capacity C3 one end parallel connection, C2 negative pole, the C3 other end, 220uF electric capacity C4 negative pole ground connection together with 0.01uF electric capacity C5 one end, C4 positive pole connects uA741 amplifier positive voltage 4 pin together with the C5 other end.
4. photo-electric electric field near-field scan instrument according to claim 1, is characterized in that: described two fiber crystal probe consistency from top to bottom, and distance between two fiber crystal probes is adjustable, and adjustable extent is 1 ~ 50 centimetre.
5. photo-electric electric field near-field scan instrument according to claim 1, it is characterized in that: the adjustable extent of the described adjustment of the probe up and down arm with scale is 1 ~ 50cm, circuit board under test fixed mount can fix the circuit board under test of 1 ~ 50cm width, the rail moving range that X-axis guide rail, Y-axis guide rail and Z axis are led is 1 ~ 60cm, probe damping firm banking is of a size of 40cm × 40cm × 10cm, and three shaft mechanical firm bankings are of a size of 100cm × 80cm × 10cm.
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