CN105185878B - 一种场发射的氮化物发光二极管 - Google Patents

一种场发射的氮化物发光二极管 Download PDF

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CN105185878B
CN105185878B CN201510506285.0A CN201510506285A CN105185878B CN 105185878 B CN105185878 B CN 105185878B CN 201510506285 A CN201510506285 A CN 201510506285A CN 105185878 B CN105185878 B CN 105185878B
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CN105185878A (zh
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郑锦坚
邓和清
寻飞林
李志明
杜伟华
伍明跃
周启伦
林峰
李水清
康俊勇
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Quanzhou Sanan Semiconductor Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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Abstract

本发明公开了一种场发射的氮化物发光二极管，通过制作纳米锥状N型氮化物、纳米锥状多量子阱和纳米锥状P型氮化物，然后在纳米锥状N型氮化物或纳米锥状多量子阱或纳米锥状P型氮化物尖端沉积铜纳米丝，利用纳米锥状尖端的场发射效应，实现纳米结构的氮化物发光二极管的电致发光，解决纳米结构难以制作P型氮化物和接触电极的难题。

Description

一种场发射的氮化物发光二极管
技术领域
本发明涉及半导体光电器件领域，特别是一种场发射的氮化物发光二极管。
背景技术
现今，发光二极管（LED），特别是氮化物发光二极管因其较高的发光效率，在普通照明领域已取得广泛的应用。氮化物纳米结构因其较大的比表面积，可以在相同平面内提供更大的量子阱面积，同时，可提升光反射效率，提升单位芯片面积的发光效率，提升发光亮度。但由于氮化物纳米结构的P型氮化物和电极较难制作，影响其商业应用。
鉴于现有技术的氮化物纳米结构存在的P型氮化物和电极较难制作的困难，因此有必出一种新的场发射的氮化物发光二极管。
发明内容
本发明的目的在于：提供一种场发射的氮化物发光二极管，通过制作纳米锥状N型氮化物、纳米锥状多量子阱和纳米锥状P型氮化物，然后在纳米锥状N型氮化物或纳米锥状多量子阱或纳米锥状P型氮化物尖端沉积铜纳米丝，利用纳米锥状尖端的场发射效应，实现纳米结构的氮化物发光二极管的电致发光，解决纳米结构难以制作P型氮化物和接触电极的难题。
本发明公开的一种场发射的氮化物发光二极管，包括N型侧材料层、P型侧材料层、纳米锥状多量子阱和铜纳米丝，定义所述N型侧材料层包括N型接触电极、第一导电衬底、第一N型氮化物和若干个纳米锥状第二N型氮化物，所述P型侧材料层包括若干个纳米锥状第二P型氮化物、第一P型氮化物、第二导电衬底和P型接触电极，所述纳米锥状多量子阱位于所述纳米锥状第二N型氮化物或所述第二纳米锥状P型氮化物上；所述铜纳米丝至少位于所述纳米锥状多量子阱或所述纳米锥状N型氮化物的任意一个尖端之上，或者是所述铜纳米丝至少位于所述纳米锥状多量子阱或所述纳米锥状P型氮化物的任意一个尖端之上，通过P型接触电极和N型接触电极加高压电场，引起尖端产生场发射效应，使电子和空穴复合发光。
进一步地，所述导电衬底为碳化硅、硅、氮化镓、氮化铝、氧化锌等具有较好导电性能的衬底。
进一步地，所述纳米锥状为圆锥状、三角锥状、金字塔锥状等顶部为尖端的形状，优选金字塔锥状结构。
进一步地，所述若干个纳米锥状N型氮化物或纳米锥状P型氮化物的底部尺寸为100nm~900nm，尖端尺寸为1nm~100nm，底部间距为10nm~10μm。
进一步地，所述多量子阱为InxGa1-xN/GaN(0≤x≤1) 叠层结构或AlyGa1-yN/AlzGa1-zN(0≤y≤1，0≤z≤1)叠层结构，厚度为1nm~1000nm。
进一步地，所述铜纳米丝呈弯曲起伏的形状。
进一步地，所述铜纳米丝的直径为5nm~500nm，长度为500nm~100μm。
进一步地，所述N型侧材料层的尖端与所述P型侧材料层的尖端之间存在间隙，所述间隙高度为10nm~100μm。
进一步地，所述高压电场的电压为1V~1000KV。
附图说明
图1为实施例1的一种场发射的氮化物发光二极管（纳米锥状P型氮化物和纳米锥状多量子阱的尖端均沉积铜纳米丝）的示意图。
图2为实施例2的一种场发射的氮化物发光二极管（仅纳米锥状多量子阱尖端沉积铜纳米丝）的示意图。
图示说明：100：N型接触电极；101：硅衬底；102：N型氮化物；103：纳米锥状的N型氮化物；104：多量子阱；105：铜纳米丝；106：纳米锥状的P型氮化物；107：P型氮化物；108：硅衬底；109：P型接触电极。
具体实施方式
以下结合附图和具体实施例对本发明作进一步的详细描述，有关本发明的相关技术内容，特点与功效，将可清楚呈现。
下面结合实施例和附图对本发明的具体实施例做进一步的说明。
实施例1
本实施例所提出的一种场发射的氮化物发光二极管的外延结构示意图，如图1所示。首先，依次利用金属有机化学气相沉积（MOCVD）在硅衬底101上外延生长N型氮化物102和纳米锥状N型氮化物103，然后，再继续外延生长1nm~1000nm厚度的InGaN多量子阱结构104，制得N型外延片；同理，在硅衬底108上，利用MOCVD外延生长P型氮化物107和纳米锥状P型氮化物106，制得P型外延片，其中所述若干个纳米锥状N型氮化物103或纳米锥状P型氮化物106的底部尺寸为100nm~900nm，尖端尺寸为1nm~100nm，底部间距为10nm~10μm；纳米锥状可以为圆锥状、三角锥状、金字塔锥状等顶部为尖端的形状，本实施例优选金字塔锥状结构；然后，将生长完的外延片取出，分别在硅衬底101和硅衬底108背面制作N型接触电极100和P型接触电极109。接着，在纳米锥状P型氮化物和所述纳米锥状多量子阱的尖端之上均沉积铜纳米丝105。所述铜纳米丝呈弯曲起伏的形状，直径为5nm~500nm，长度为500nm~100μm。最后，将P型外延片和N型外延片进行结合封装，保持N型侧材料层的尖端与所述P型侧材料层的尖端间隙为500nm。通过在P型接触电极和N型接触电极上加正负高压电场，电压为500V，通过高压使尖端的铜纳米丝产生场发射效应，实现电子和空穴复合，产生光发射。
实施例2
如图2所示，本实施例与实施例1的区别在于：仅在纳米锥状多量子阱尖端沉积铜纳米丝，而在所述纳米锥状P型氮化物未沉积铜纳米丝，通过P型氮化物的纳米尖端亦可产生类似的场发射效应，实现电子和空穴的复合发光。
以上实施方式仅用于说明本发明，而并非用于限定本发明，本领域的技术人员，在不脱离本发明的精神和范围的情况下，可以对本发明做出各种修饰和变动，因此所有等同的技术方案也属于本发明的范畴，本发明的专利保护范围应视权利要求书范围限定。

Claims (9)

1.一种场发射的氮化物发光二极管，包括N型侧材料层、P型侧材料层、纳米锥状多量子阱和铜纳米丝，定义所述N型侧材料层包括N型接触电极、第一导电衬底、第一N型氮化物和若干个纳米锥状第二N型氮化物，所述P型侧材料层包括若干个纳米锥状第二P型氮化物、第一P型氮化物、第二导电衬底和P型接触电极，所述纳米锥状多量子阱位于所述纳米锥状第二N型氮化物或所述纳米锥状第二P型氮化物上；所述铜纳米丝至少位于所述纳米锥状多量子阱或所述纳米锥状N型氮化物的任意一个尖端之上，或者是所述铜纳米丝至少位于所述纳米锥状多量子阱或所述纳米锥状P型氮化物的任意一个尖端之上，通过P型接触电极和N型接触电极加高压电场，引起尖端产生场发射效应，使电子和空穴复合发光，其中所述高压电场的电压为1V~1000KV。
2.根据权利要求1所述的一种场发射的氮化物发光二极管，其特征在于：所述第一导电衬底、第二导电衬底为碳化硅或硅或氮化镓或氮化铝或氧化锌。
3.根据权利要求1所述的一种场发射的氮化物发光二极管，其特征在于：所述纳米锥状为圆锥状或三角锥状或金字塔锥状。
4.根据权利要求1所述的一种场发射的氮化物发光二极管，其特征在于：所述若干个纳米锥状第二N型氮化物或纳米锥状第二P型氮化物的底部尺寸为100nm~900nm，尖端尺寸为1nm~100nm，底部间距为10nm~10μm。
5.根据权利要求1所述的一种场发射的氮化物发光二极管，其特征在于：所述多量子阱为InxGa1-xN/GaN(0≤x≤1) 叠层结构或AlyGa1-yN/AlzGa1-zN(0≤y≤1，0≤z≤1)叠层结构，厚度为1nm~1000nm。
6.根据权利要求1所述的一种场发射的氮化物发光二极管，其特征在于：所述铜纳米丝呈弯曲起伏的形状。
7.根据权利要求1所述的一种场发射的氮化物发光二极管，其特征在于：所述铜纳米丝的直径为5nm~500nm，长度为500nm~100μm。
8.根据权利要求1所述的一种场发射的氮化物发光二极管，其特征在于：所述N型侧材料层的尖端与所述P型侧材料层的尖端之间存在间隙。
9.根据权利要求8所述的一种场发射的氮化物发光二极管，其特征在于：所述间隙高度为10nm~100μm。
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