CN105185700B - The preparation method of ultra-thin grid oxygen - Google Patents
The preparation method of ultra-thin grid oxygen Download PDFInfo
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- CN105185700B CN105185700B CN201510487665.4A CN201510487665A CN105185700B CN 105185700 B CN105185700 B CN 105185700B CN 201510487665 A CN201510487665 A CN 201510487665A CN 105185700 B CN105185700 B CN 105185700B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
Abstract
The invention discloses a kind of preparation methods of ultra-thin grid oxygen, after using the techniques such as high temperature ISSG growth super thin oxide layer, the mixed gas of nitrogen and oxygen is added in high-temperature baking to eliminate positive surface charge, super thin oxide layer silica can be prevented to carry out reaction generation gaseous state SiO with substrate silicon, so as to avoid the missing of ultra-thin grid oxygen, loss.
Description
Technical field
Manufacturing technology field more particularly to a kind of preparation side of ultra-thin grid oxygen the present invention relates to semiconductor integrated circuit
Method.
Background technology
With the continuous development of semiconductor technology, in order to meet the requirement of device performance, super large-scale integration
(ULSI) thickness of gate oxide is constantly thinned, and 3 nanometers of hereinafter referred to as ultra-thin grid oxygens are down to by original 20-30nm.
In the preparation process of ultra-thin grid oxygen, new gate medium growth technique is generally used since 90 nanometer nodes,
One layer of ultra-thin high quality is generated using ISSG original positions steam oxidation technique (In-Situ Steam Generation) successively
Oxide-film, the pure N of high temperature2Baking eliminates positive charge, the DPN decoupled plasma nitridation process (Decoupled of wafer surface
Plasma Nitridation) generated before pecvd nitride high quality oxide, PNA nitridation annealing process (Post
Nitridation Anneal) post-nitridation anneal raising nitrogen-fixing efficiency, to form SiOxNy high-K dielectric layers, as shown in Figure 1.
Wherein, ISSG is a kind of rapid thermal anneal process, can heat and cool down in a short time silicon chip, and heat budget is few, and
And temperature uniformity is preferable.Its reaction principle is：Using the oxygen of a small amount of hydrogen is mixed as reaction atmosphere, in silicon chip under high temperature
Surface generates the chemical reaction similar to burning, generates substantial amounts of gas-phase activity free radical, wherein mainly oxygen atom, these are certainly
The oxidation process of silicon chip is taken part in by base.Due to the strong oxidation of oxygen atom, defect in the sull body finally obtained
Less, quality is high.
Four steps and reaction chamber of above-mentioned existing method are specially：
Step 1. high temperature ISSG grows ultra-thin silicon dioxide layer (N2O+H2Atmosphere) (ISSG chambers)；
The pure N of step 2. high temperature2Baking is to eliminate the positive charge (ISSG chambers) of crystal column surface；
The ultra-thin silicon dioxide layer of step 3. decoupled plasma nitridation is to adulterate nitrogen (DPN chambers)；
Step 4. makes annealing treatment to strengthen fixed nitrogen technique and repairs the plasma damage (PNA chambers) of silicon dioxide layer.
Wherein, step 2 is high temperature N2Baking, it is therefore an objective to eliminate wafer surface accumulation positive charge.But this work
Skill is easy to cause the missing defect problem of ultra-thin grid oxygen there are a shortcoming.This is because high temperature (1100 DEG C) and pure N2Condition
Following reaction can be generated during lower baking：SiO2+ Si → SiO (being gaseous state under high temperature).
This reaction is especially prominent in more fragile region, can cause to SiO2A kind of etching, ultimately result in part
The ultra-thin grid oxygen in region is now completely etched away or is partially etched, and the problem of ultra-thin grid oxygen lacks defect is resulted in, such as Fig. 2 institutes
Show, visible normal ultra-thin grid oxygen in left figure circle, right figure is to have lacked the abnormal schematic diagram of ultra-thin grid oxygen.
The content of the invention
In order to solve the above-mentioned problems of the prior art, the present invention provides a kind of preparation method of ultra-thin grid oxygen, can be with
Ultra-thin grid oxygen is protected not to be removed, so as to eliminate the defects of ultra-thin grid oxygen lacks.
The preparation method of ultra-thin grid oxygen provided by the invention, comprises the following steps：
Step S01, provides silicon chip；
Step S02 grows super thin oxide layer；
Step S03 toasts to eliminate the positive charge of the silicon chip surface in the environment of containing nitrogen and oxygen；
Step S04 nitrogenizes the super thin oxide layer to adulterate nitrogen；
Step S05 makes annealing treatment the silicon chip, obtains ultra-thin grid oxygen.
Further, oxygen volumetric concentration is 5-10% in step S03.
Further, the baking temperature of step S03 is 1000-1200 DEG C.
Further, step S02 is included using high temperature ISSG techniques (steam oxidation technique in situ, In-Situ Steam
Generation super thin oxide layer) is grown.
Further, step S02 is nitrous oxide ISSG techniques.
Further, the technological temperature of step S02 is 800-1100 DEG C.
Further, step S04 is included using DPN techniques (decoupled plasma nitridation process, Decoupled Plasma
Nitridation the super thin oxide layer) is nitrogenized.
Further, step S05 includes carrying out the silicon chip PNA (nitridation annealing process, Post Nitridation
Anneal) make annealing treatment.
Further, the annealing temperature in step S05 is 1000-1100 DEG C.
Further, the super thin oxide layer is silica.
The preparation method of ultra-thin grid oxygen provided by the invention, using the techniques such as high temperature ISSG growth super thin oxide layer it
Afterwards, the mixed gas of nitrogen and oxygen is added in high-temperature baking to eliminate positive surface charge, super thin oxide layer two can be prevented
Silica carries out reaction generation gaseous state SiO with substrate silicon, so as to avoid the missing of ultra-thin grid oxygen, loss.
Description of the drawings
For that can become apparent from understanding purpose, feature and advantage of the present invention, below with reference to attached drawing to the preferable reality of the present invention
Example is applied to be described in detail, wherein：
Fig. 1 is the flow diagram of existing ultra-thin grid oxygen preparation method；
The defects of Fig. 2 is the ultra-thin grid oxygen that existing preparation method obtains schematic diagram；
Fig. 3 is the flow diagram of the ultra-thin grid oxygen preparation method of the present invention.
Specific embodiment
Referring to Fig. 3, the preparation method of the ultra-thin grid oxygen of the present embodiment specifically includes following steps：
Step S01, provides silicon chip.
The silicon chip of this step is used to prepare ultra-thin grid oxygen, and omits the step of preceding road can be realized using the prior art.
Step S02 grows super thin oxide layer.
Existing process realization can be used in this step, it is preferred that the present embodiment uses high temperature ISSG techniques, preferably using oxygen
Changing phenodiazine ISSG, (i.e. reaction gas is N2O and H2), technological temperature is preferably 800-1100 DEG C.Wherein, the ultra-thin oxidation of growth
Layer is silica.In practical application, rapid thermal oxidation process (Rapid Thermal Oxidation, RTO) can also be used
Or oxidation ISSG (reaction gas is oxygen and hydrogen).
Step S03 toasts to eliminate the positive charge of silicon chip surface in the environment of containing nitrogen and oxygen.
In this step, the appropriate addition of oxygen can prevent silica and substrate pasc reaction, avoid losing ultra-thin oxidation
Layer, the volumetric concentration of oxygen are preferably 5-10%, and the temperature of this step baking is preferably 1000-1200 DEG C, the present embodiment
For 1100 DEG C.
Step S04 nitrogenizes super thin oxide layer to adulterate nitrogen.
Existing process realization can be used in this step, for adulterating nitrogen in silica, it is preferred that the present embodiment uses
DPN techniques.In practical application, remote plasma nitridation (Remote Plasma Nitridation, RPN) can also be used
Or nitridation (NO, the N of vertical proliferation equipment2O or NH3Deng).
Step S05, makes annealing treatment silicon chip, obtains ultra-thin grid oxygen SiOxNy.
Existing process realization can be used in this step, for stablizing doping nitrogen, strengthening nitrogen fixation effect and repairing silicon dioxide layer
Plasma damage, it is preferred that the present embodiment uses PNA annealing process, annealing temperature is preferably 1000-1100 DEG C.It is real
In the application of border, spike annealing etc. can also be used.
Claims (9)
1. a kind of preparation method of ultra-thin grid oxygen, which is characterized in that it comprises the following steps：
Step S01, provides silicon chip；
Step S02 grows super thin oxide layer；
Step S03 toasts to eliminate the positive charge of the silicon chip surface in the environment of containing nitrogen and oxygen, wherein, oxygen
Volumetric concentration is 5-10%, can prevent silica and substrate pasc reaction, avoids loss super thin oxide layer；
Step S04 nitrogenizes the super thin oxide layer to adulterate nitrogen；
Step S05 makes annealing treatment the silicon chip, obtains ultra-thin grid oxygen.
2. the preparation method of ultra-thin grid oxygen according to claim 1, it is characterised in that：The baking temperature of step S03 is
1000-1200℃。
3. the preparation method of ultra-thin grid oxygen according to claim 1, it is characterised in that：Step S02 is included using high temperature
ISSG techniques grow super thin oxide layer.
4. the preparation method of ultra-thin grid oxygen according to claim 3, it is characterised in that：Step S02 is nitrous oxide ISSG
Technique.
5. the preparation method of ultra-thin grid oxygen according to claim 4, it is characterised in that：The technological temperature of step S02 is
800-1100℃。
6. the preparation method of ultra-thin grid oxygen according to claim 1, it is characterised in that：Step S04 is included using DPN techniques
Nitrogenize the super thin oxide layer.
7. the preparation method of ultra-thin grid oxygen according to claim 1, it is characterised in that：Step S05 is included to the silicon chip
Carry out PNA annealings.
8. the preparation method of ultra-thin grid oxygen according to claim 7, it is characterised in that：Annealing temperature in step S05 is
1000-1100℃。
9. according to the preparation method of the ultra-thin grid oxygen of claim 1 to 8 any one of them, it is characterised in that：The ultra-thin oxidation
Layer is silica.
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| CN107785270B (en) * | 2016-08-31 | 2021-05-07 | 株洲中车时代半导体有限公司 | Nitridation method of MOSFET device |
| CN106206260B (en) * | 2016-09-27 | 2019-10-22 | 上海华力微电子有限公司 | A kind of preparation method of grid oxide layer |
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| CN1531035A (en) * | 2003-03-14 | 2004-09-22 | 旺宏电子股份有限公司 | Continuous dry/wet/dry oxidation method for shaping oxidation film |
| KR100537554B1 (en) * | 2004-02-23 | 2005-12-16 | 주식회사 하이닉스반도체 | Method of manufacturing oxide film for semiconductor device |
| CN103489770A (en) * | 2013-09-22 | 2014-01-01 | 上海华力微电子有限公司 | Grid oxide layer growth method and CMOS tube manufacturing method |
| CN103972071A (en) * | 2014-04-22 | 2014-08-06 | 上海华力微电子有限公司 | Manufacturing method for nitrogenous grid electrode oxidation layer |
| CN103943479A (en) * | 2014-04-22 | 2014-07-23 | 上海华力微电子有限公司 | Preparation method for gate oxide |
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