CN1531035A - Continuous dry/wet/dry oxidation method for shaping oxidation film - Google Patents
Continuous dry/wet/dry oxidation method for shaping oxidation film Download PDFInfo
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- CN1531035A CN1531035A CNA031191371A CN03119137A CN1531035A CN 1531035 A CN1531035 A CN 1531035A CN A031191371 A CNA031191371 A CN A031191371A CN 03119137 A CN03119137 A CN 03119137A CN 1531035 A CN1531035 A CN 1531035A
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Abstract
The present invention is a method for forming an oxide film on a substrate in the sequence of dry / wet / dry oxidation. The first dry oxidation process is performed firstly to form a compact original oxide film. Then a wet oxidation process is performed to form an oxide film. Thereafter the second dry oxidation process is performed to reduce the density of the captured charges.
Description
Technical field
The present invention is about the growing technology of a kind of oxide-film (oxide layer), especially, and about a kind of continuous dry-type/wet/dry oxidizing process (dry/wet/dry oxidation) growing technology of oxide-film.
Background technology
One of modal film is exactly an oxide-film in semiconductor fabrication process, gate oxidation films (gate oxide) for example, or common tunnel oxide film (tunnel oxide) etc. in the memory element.
Tradition is furnace oxidation technology (furnace oxidation) with one of technology that generates oxide-film.Furnace oxidation technology can be the one step technology of dry type oxidation or wet oxidation usually, for example wafer inserted in the Quartz stove tube, and at high temperature aerating oxygen or oxygen-containing gas, and on wafer, form layer oxide film.Yet,, can cause the slow excessively problem of growth rate (growing rate), and the hot nargin (thermalbudget) of dry type oxidation is high too if above-mentioned furnace oxidation technology adopts the dry type oxidation.When the wet oxidation of furnace oxidation process using, then having hydrogen content height, dangling bonds (dangling bond) reliability many and oxide-film may be by problems such as hot carrier (hot carrier) influences.
In addition, usually before generating oxide-film, can carry out one cleaning process earlier, and this cleaning process is often because adopt strong oxidizer as cleaning agent, and on substrate, produce chemical oxide (chemical oxide), this stratification oxide-film be present in the quality that on-chip native oxide inferior (poor native oxide) all will be unfavorable for follow-up formation oxide originally.
Also have a kind of method that is usually used in generating oxide-film at present, be called rapid thermal oxidation process (rapidthermal oxidation is called for short RTO), this process using generates the method for oxide-film at short notice, to reduce hot nargin.Though the caused problem of above-mentioned furnace oxidation technology can not take place this method, rapid thermal oxidation process but can't be improved the flatness (smoothness) of interface between silicon chip and the oxide (interface) and near the trapped charge densities (trap density) at interface.Especially rapid thermal oxidation process is because be the generation of finishing oxide-film at short notice, so have more trap-charge (trap charge) and bigger flat band voltage displacement (flat-bandvoltage shift) in oxide-film inside.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of continuous dry-type/wet/dry oxidizing process that generates oxide-film, with quality and the flatness of improving interface between substrate and oxide-film.
Another object of the present invention provides a kind of continuous dry-type/wet/dry oxidizing process that generates oxide-film, to reduce the dangling bonds of substrate surface.
Another object of the present invention provides a kind of continuous dry-type/wet/dry oxidizing process that generates oxide-film, to reduce trapped charge densities and to dwindle the flat band voltage displacement of oxide-film.
According to above-mentioned and other purposes, the present invention proposes a kind of continuous dry-type/wet/dry oxidizing process that generates oxide-film, is used for generating layer oxide film on a substrate, comprises adopting the first dry type oxidation technology, with the primary oxide-film of densification.Then, adopt wet-type oxidation technology, to generate oxide-film.Then, adopt the second dry type oxidation technology, to reduce trapped charge densities (trap chargedensity).
The present invention proposes a kind of continuous dry-type/wet/dry oxidizing process that generates oxide-film again, is used for generating layer oxide film on a substrate, and its step comprises carries out dry type oxidation technology process earlier one, with the primary oxide-film of densification.Then, carry out the wet-type oxidation technology process one, to generate this oxide-film.Then, carry out annealing process procedure one, to reduce trapped charge densities, wherein the gas that annealing process adopted comprises oxygen.
The present invention utilizes a kind of successional three stage oxidation technologies to generate oxide-film, and elder generation is by one primary oxide-film of dry type oxidation technology process densification and repair chemical oxide film.Then, generate most oxide-film by one wet-type oxidation technology process.At last, carry out the dry type oxidation technology process of a similar annealing process (anneal process), to reduce trap-charge and to dwindle the flat band voltage displacement of oxide-film.
For making more clear and definite of above-mentioned and other purposes, feature and advantage of the present invention, below in conjunction with preferred embodiment, and conjunction with figs., give more detailed explanation to the present invention.
Description of drawings
Figure 1 shows that the process chart that adopts continuous dry-type of the present invention/wet/dry oxidizing process and generate a preferred embodiment of oxide-film.
The reference numeral explanation
100 provide a substrate
102 cleaning substrates
104 carry out the first dry type oxidation technology process together, with primary oxide-film of densification and minimizing dangling bonds
106 carry out the wet-type oxidation technology process one
108 carry out the second dry type oxidation technology process together
110 carry out annealing process procedure one, to reduce trapped charge densities
Embodiment
The oxide-film that present embodiment generated can be used as gate oxidation films (gate oxide) or tunnel oxide film (tunnel oxide).Though only list two kinds of oxide-films herein, the present invention is not limited in and only is used to generate above-mentioned two kinds of oxide-films, and can be used as the method that other oxide-films generate in the semiconductor technology.
Figure 1 shows that the process chart that adopts continuous dry-type of the present invention/wet/dry oxidizing process to generate a preferred embodiment of oxide-film.With reference to figure 1, in step 100, provide a substrate, this substrate can be a silicon chip.Then, in step 102, carry out the cleaning process of substrate, the cleaning agent that is commonly used to cleaning substrate comprises hydrogen fluoride (HF), SC1 or SC2.
Then, in step 104, carry out the first dry type oxidation technology process together, with primary oxide-film of densification (native oxide) and minimizing dangling bonds (dangling bond).Wherein the first dry type oxidation can be adopted rapid thermal oxidation process (rapid thermal oxidation is called for short RTO) or furnace oxidation technology (furnace oxidation).When rapid thermal oxidation process is adopted in the first dry type oxidation, its technological temperature about 800～1100 degree Celsius, the time is between 10～20 seconds, and the gas that rapid thermal oxidation process adopted can be oxygen and nitrogen, and wherein oxygen gas flow rate and nitrogen flow rate are 0～12slm (standard liter per minute).In addition, when furnace oxidation technology was adopted in the first dry type oxidation, wherein technological temperature was about 800～1000 degree Celsius, and for example was oxygen and nitrogen in the employed gas of furnace oxidation technology, and wherein oxygen gas flow rate and nitrogen flow rate are 0～12slm.
Afterwards, in step 106, carry out the wet-type oxidation technology process one, to generate most oxide-film.Then, can carry out step 108 or 110, carry out the second dry type oxidation technology process together in step 108, wherein the condition of the second dry type oxidation can be identical with the condition of the first dry type oxidation; In step 110, carry out one annealing process (anneal process) process, with reduce in the oxide-film trapped charge densities (trap charge density) wherein the gas of annealing process (ambience) can be oxygen and nitrogen.And the oxide thickness that obtains at last is between 15～100 dusts.
In sum, characteristics of the present invention are to utilize a kind of successional three stage process to generate oxide-film, its step is to adopt the primary oxide-film of one dry type oxidation technology densification earlier, and formed chemical oxide film (chemical oxide) behind the repairing cleaning substrate.Afterwards, utilize wet-type oxidation technology again one, generate most oxide-film.At last, carry out the dry type oxidation technology of a similar annealing process (anneal process) again, to reduce trap-charge and to dwindle the flat band voltage displacement (flat-band voltage shift) of oxide-film.
Though the present invention is open in conjunction with the preferred embodiments as above; yet this embodiment is not in order to limit the present invention; any be proficient in those skilled in the art should be clear and definite; without departing from the spirit and scope of the present invention; can do a large amount of changes and improvement to the present invention, so protection scope of the present invention should be limited by the scope of claim.
Claims (27)
1. continuous dry-type/wet/dry the oxidizing process that generates oxide-film is used for generating an oxide-film on a substrate, it is characterized in that step comprises:
Carry out the first dry type oxidation technology process together, with the primary oxide-film of densification;
Carry out the wet-type oxidation technology process one, to generate this oxide-film; And
Carry out the second dry type oxidation technology process together, to reduce trapped charge densities.
2. the continuous dry-type of generation oxide-film as claimed in claim 1/wet/dry oxidizing process is characterized in that, this first dry type oxidation technology comprises a rapid thermal oxidation process.
3. the continuous dry-type of generation oxide-film as claimed in claim 2/wet/dry oxidizing process is characterized in that, the temperature of this rapid thermal oxidation process is 800～1100 degree Celsius.
4. the continuous dry-type of generation oxide-film as claimed in claim 2/wet/dry oxidizing process is characterized in that, the time of this rapid thermal oxidation process is between 10～20 seconds.
5. the continuous dry-type of generation oxide-film as claimed in claim 2/wet/dry oxidizing process is characterized in that, the employed gas of this rapid thermal oxidation process comprises oxygen and nitrogen.
6. the continuous dry-type of generation oxide-film as claimed in claim 5/wet/dry oxidizing process is characterized in that the oxygen gas flow rate that this rapid thermal oxidation process adopted is 0～12slm.
7. the continuous dry-type of generation oxide-film as claimed in claim 5/wet/dry oxidizing process is characterized in that the nitrogen flow rate that this rapid thermal oxidation process adopted is 0～12slm.
8. the continuous dry-type of generation oxide-film as claimed in claim 1/wet/dry oxidizing process is characterized in that, this first dry type oxidation technology comprises a furnace oxidation technology.
9. the continuous dry-type of generation oxide-film as claimed in claim 8/wet/dry oxidizing process is characterized in that, the temperature of this furnace oxidation technology is 800～1000 degree Celsius.
10. the continuous dry-type of generation oxide-film as claimed in claim 8/wet/dry oxidizing process is characterized in that, the employed gas of this furnace oxidation technology comprises oxygen and nitrogen.
11. the continuous dry-type of generation oxide-film as claimed in claim 10/wet/dry oxidizing process is characterized in that the oxygen gas flow rate that is adopted of this furnace oxidation technology is 0～12slm.
12. the continuous dry-type of generation oxide-film as claimed in claim 10/wet/dry oxidizing process is characterized in that, the dried nitrogen flow rate that this furnace oxidation technology is adopted is 0～12slm.
13. the continuous dry-type of generation oxide-film as claimed in claim 1/wet/dry oxidizing process is characterized in that, this second dry type oxidation technology is identical with the condition of this first dry type oxidation technology.
14. the continuous dry-type of generation oxide-film as claimed in claim 1/wet/dry oxidizing process is characterized in that the thickness of this oxide-film is between 15～100 dusts.
15. a method that generates oxide-film comprises:
Adopt a dry type oxidation technology, with the primary oxide-film of densification;
Adopt a wet-type oxidation technology, to generate an oxide-film; And
Adopt an annealing process,, it is characterized in that the gas of the employing of this annealing process comprises oxygen and nitrogen to reduce the trapped charge densities of this oxide-film.
16. the method for generation oxide-film as claimed in claim 15 is characterized in that, this dry type oxidation technology comprises a rapid thermal oxidation process.
17. the method for generation oxide-film as claimed in claim 16 is characterized in that, the temperature of this rapid thermal oxidation process is 800～1100 degree Celsius.
18. the method for generation oxide-film as claimed in claim 16 is characterized in that, the film formation time of this rapid thermal oxidation process is between 10～20 seconds.
19. the method for generation oxide-film as claimed in claim 16 is characterized in that the gas that this rapid thermal oxidation process adopted comprises oxygen and nitrogen.
20. the method for generation oxide-film as claimed in claim 19 is characterized in that, the oxygen gas flow rate that this rapid thermal oxidation process adopted is 0～12slm.
21. the method for generation oxide-film as claimed in claim 19 is characterized in that, the nitrogen flow rate that this rapid thermal oxidation process adopted is 0～12slm.
22. the method for generation oxide-film as claimed in claim 15 is characterized in that, this dry type oxidation technology comprises a furnace oxidation technology.
23. the method for generation oxide-film as claimed in claim 22 is characterized in that, the temperature of this furnace oxidation technology is 800～1000 degree Celsius.
24. the method for generation oxide-film as claimed in claim 22 is characterized in that, the gas that this furnace oxidation technology is adopted comprises oxygen and nitrogen.
25. the method as generation oxide-film as described in the claim 24 is characterized in that the oxygen gas flow rate that this furnace oxidation technology is adopted is 0～12slm.
26. the method for generation oxide-film as claimed in claim 24 is characterized in that, the nitrogen flow rate that this furnace oxidation technology is adopted is 0～12slm.
27. the method for generation oxide-film as claimed in claim 15 is characterized in that, the thickness of this oxide-film is between 15～100 dusts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNA031191371A CN1531035A (en) | 2003-03-14 | 2003-03-14 | Continuous dry/wet/dry oxidation method for shaping oxidation film |
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| CNA031191371A CN1531035A (en) | 2003-03-14 | 2003-03-14 | Continuous dry/wet/dry oxidation method for shaping oxidation film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681288A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | High-reliability growth technique for low-temperature gate oxide layer |
| CN105185700A (en) * | 2015-08-11 | 2015-12-23 | 上海华力微电子有限公司 | Preparation method of ultra-thin gate oxygen |
| CN105355551A (en) * | 2015-11-12 | 2016-02-24 | 扬州杰利半导体有限公司 | Wafer passivation technology |
| CN110120338A (en) * | 2019-05-21 | 2019-08-13 | 武汉新芯集成电路制造有限公司 | The forming method of gate oxide, semiconductor devices and forming method thereof |
-
2003
- 2003-03-14 CN CNA031191371A patent/CN1531035A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681288A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | High-reliability growth technique for low-temperature gate oxide layer |
| CN105185700A (en) * | 2015-08-11 | 2015-12-23 | 上海华力微电子有限公司 | Preparation method of ultra-thin gate oxygen |
| CN105355551A (en) * | 2015-11-12 | 2016-02-24 | 扬州杰利半导体有限公司 | Wafer passivation technology |
| CN105355551B (en) * | 2015-11-12 | 2018-05-15 | 扬州杰利半导体有限公司 | A kind of wafer passivation technique |
| CN110120338A (en) * | 2019-05-21 | 2019-08-13 | 武汉新芯集成电路制造有限公司 | The forming method of gate oxide, semiconductor devices and forming method thereof |
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