CN105161556A - Rare earth (Er+3) doped infrared light up-conversion effect wide spectrum solar energy battery - Google Patents
Rare earth (Er+3) doped infrared light up-conversion effect wide spectrum solar energy battery Download PDFInfo
- Publication number
- CN105161556A CN105161556A CN201510629466.2A CN201510629466A CN105161556A CN 105161556 A CN105161556 A CN 105161556A CN 201510629466 A CN201510629466 A CN 201510629466A CN 105161556 A CN105161556 A CN 105161556A
- Authority
- CN
- China
- Prior art keywords
- film
- wide spectrum
- solar energy
- energy battery
- battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001228 spectrum Methods 0.000 title claims abstract description 17
- 230000000694 effects Effects 0.000 title claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract 5
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract 5
- 238000006243 chemical reaction Methods 0.000 title claims abstract 4
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 235000019738 Limestone Nutrition 0.000 claims abstract 2
- 239000006028 limestone Substances 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims description 12
- 239000011734 sodium Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims 1
- 239000005341 toughened glass Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 150000001336 alkenes Chemical class 0.000 description 13
- 239000002689 soil Substances 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
- H01L31/0327—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
AA rare earth (Er+3) doped infrared light up-conversion effect wide spectrum solar energy battery is a novel cheap wide spectrum solar energy battery which is developed on the basis of the modern common solar energy battery development concept, the biggest characteristics of which comprise that the cheap photovoltaic materials what the earth reserves the most is adopted, the battery processing manufacture method is simple and easy to make mass production, and the production cost is low, which is beneficial for using and popularization. All in all, the invention is to be the chosen direction for the long use of the solar energy battery. The structure of the invention is as shown in graph 1. (1) is a cheap wide spectrum solar energy battery substrate containing (Na),limestone and glass, with thickness being 3mm; (2) is a M0 back electrode (1Mum), (3) is a TiO2 film doped with rear earth (Er+3), (4) is a CZTS (Se.S) film, wherein the CZTS are abbreviation for the signals of Cu, Zn, Tin, Se, and S the and the thickness of the CZTS (Se,S) film is 2 Mum, and a 4.cds film is 0.05 Mum; (5) is a ZnO film which is 0.05 Mum; (6) is a 8-layer grapheme film as a front electrode; (7) is a front panel high light transmission rate stalinite 2mm; and (8) is an M of the battery, a back electrode.
Description
Technical field:
The present invention relates to a kind of material source to enrich, at an easy rate, manufacture method is simple, and what be easy to promote the use of is novel, by alkene soil material (Er
+ 3) the infrared light upconversion mechanism wide spectrum solar cell that mixes, can in the wide scope of solar spectral, comprise most of infrared waveband absorbing, generating efficiency is high.
Background technology:
The mainly silicon solar cell of a large amount of use in current world wide and part semiconductor compound solar cell.These solar cells, be much that cost is very high, as polycrystalline silicon material needs to meet mouth, buy to process, sell out, cost is very high, thus still facing lots of obstruction in market channel.Must select for solving this bottleneck and predicament the cheap photovoltaic material that the earth amount of accumulateing is abundant, advanced technology, break-through skill and the bottleneck of the market must be adopted.Cu, Zn, Tin, S (Se) are the photovoltaic materials that on the earth, the amount of accumulateing very is enriched.Their performance, the chemical same clan and existing high performance photovoltaic material performance are entered seemingly.Many alkene soil materials, China's amount of accumulateing is abundanter, and its improvement in performance of effect to photoelectric device has major benefit.
The present invention is exactly under this background, utilizes the technological achievement of cheap copper, zinc, tin, S film solar battery, by alkene soil (Er
+ 3) mix under the effect of infrared light, produce upconversion mechanism in TiO2 film, luminescence generated by light also returns in CZTS adsorbed film, more photo-generated carriers (electronics, hole) are excited to produce, improve the visible light wave range of CZTS solar energy energy battery, infrared band all has year method to produce, and becomes the solar cell of wide spectrum characteristic.
The content of patent of the present invention: this alkene soil (Er
+ 3) mix infrared light upconversion mechanism wide spectrum solar cell, be by alkene soil (Er
+ 3) mix TiO2 film, under the effect of sunlight middle-infrared band, transformation in generation, luminescence generated by light, produces more photo-generated carriers (electronics, hole) in CZTS adsorbed film.For reaching this object.This patent manufactures a kind of novel solar battery, and be included in visible light wave range with conventional solar cell unlike one, infrared band all can produce photoelectric current, i.e. a kind of wide spectrum solar cell.
The structure of patent of the present invention as shown in figure.Comprise:
What 1,100 × 100 × 3 (mm) were thick receive (Na) glass; 2,1 μm thick, purity is the molybdenum electroplax of 99.99, is made up of sputtering method; 3, first by purity 99.99%TiO
2for major ingredient, then mix alkene soil erbium (Er) of high-purity 99.99, make target with the ratio of 4.5%, with audio frequency magnetron sputtering technique, at M
0electrode film deposits 1 μm of film.4, on CZTS film, the Cds film of sputter 0.05 μm.5, be the ZnO of 99.99 in the purity that Cds film sputter 0.05 μm is thick.6, CVD (chemical vapor deposition method) method is adopted to make the graphene film square resistance 90 Ω/ of eight layer thicknesses as front electrode.The front glass sheet of 7, to be thickness the be high transmission rate of 100 × 100 × 2mm.8, molybdenum electroplax.Patent of the present invention utilizes alkene soil Er
+ 3mix TiO
2film, under Infrared irradiation, produce upconversion mechanism, luminescence generated by light, also produces photo-generated carrier at the infrared band of sunlight, generates electricity under realizing the full spectral condition of cheap photovoltaic CZTS solar cell, is the most promising photovoltaic cell product today.
Accompanying drawing illustrates:
Fig. 1: be patent alkene soil (Er of the present invention
+ 3) mix the structural representation of infrared light upconversion mechanism wide spectrum solar cell.
Fig. 2 is patent alkene soil (Er of the present invention
+ 3) mix infrared light upconversion mechanism wide spectrum solar module electrical connecting wires figure.
Fig. 3 is patent alkene soil (Er of the present invention
+ 3) mix application principle figure under infrared light upconversion mechanism wide spectrum solar cell optically focused condition.
Shown in figure mono-, by battery production procedure, 1, be substrate sodium (Na) glass; 2 is molybdenum (Mo) electrode; 3 is Er
+ 3: TiO
2film; 4 is CSTS (Se) film; 5, be 99.99%Cds film; 6 is 99.99%ZnO film; 7, be electrode before eight thickness Graphenes, 8, be header board high grade of transparency glass.This battery is burn-on after positive and negative plate power line, covers front panel, adopts sealing EVA adhesive film vacuum lamination to form.
Figure bis-, the present invention is alkene soil (Er
+ 3) mix electrical connection diagram infrared light being changed wide spectrum solar cell.To be in series photovoltaic module by both positive and negative polarity.
Figure tri-is alkene of the present invention soil Er
+ 3apply under mixing the optically focused condition of infrared light upconversion mechanism wide spectrum solar cell, concentration applications schematic diagram.
1, Fresnel Lenses; 2, secondary condensation convex lens; 3, the wide solar energy cell piece of CZTS (Se); 4, heat sink.
Claims (1)
1. rare earth (Er as shown in figure
-3) mix in infrared up conversion effect wide spectrum solar battery structure schematic diagram, comprise; (1) be this wide spectrum solar cell substrate containing sodium (Na) limestone glass thick be 3mm; (2) be M
0thick 1 μm of back electrode; (3) rare earth (Er
+ 3) the TiOz film that mixes; (4) SZTS (Se.S) film, namely the chemical symbol of Cu, Zn, Tin, Se.S is write a Chinese character in simplified form; (5) ZnO film 0.05 μm is thick; (6) electrode-8 layer graphene film before battery; (7) high transparency toughened glass before.2mm; (8) be the Mo back electrode of battery.By above-mentioned each element, with the rare earth (Er made by any machining manufacture
+ 3) mix infrared up conversion effect wide spectrum solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510629466.2A CN105161556A (en) | 2015-09-29 | 2015-09-29 | Rare earth (Er+3) doped infrared light up-conversion effect wide spectrum solar energy battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510629466.2A CN105161556A (en) | 2015-09-29 | 2015-09-29 | Rare earth (Er+3) doped infrared light up-conversion effect wide spectrum solar energy battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105161556A true CN105161556A (en) | 2015-12-16 |
Family
ID=54802369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510629466.2A Pending CN105161556A (en) | 2015-09-29 | 2015-09-29 | Rare earth (Er+3) doped infrared light up-conversion effect wide spectrum solar energy battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161556A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673773A (en) * | 2009-09-24 | 2010-03-17 | 赵枫 | Surface coated solar battery module glass and preparation method thereof |
| CN102522434A (en) * | 2011-12-15 | 2012-06-27 | 香港中文大学 | Copper-indium-gallium-selenium film photovoltaic cell device and preparation method thereof |
| CN104795455A (en) * | 2014-01-21 | 2015-07-22 | 东莞日阵薄膜光伏技术有限公司 | CZTS film solar cell with transparent graphene conductive film |
-
2015
- 2015-09-29 CN CN201510629466.2A patent/CN105161556A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673773A (en) * | 2009-09-24 | 2010-03-17 | 赵枫 | Surface coated solar battery module glass and preparation method thereof |
| CN102522434A (en) * | 2011-12-15 | 2012-06-27 | 香港中文大学 | Copper-indium-gallium-selenium film photovoltaic cell device and preparation method thereof |
| CN104795455A (en) * | 2014-01-21 | 2015-07-22 | 东莞日阵薄膜光伏技术有限公司 | CZTS film solar cell with transparent graphene conductive film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101814553B (en) | Light-assistant method for preparing light absorption layer of copper-indium-gallium-selenium film solar cell | |
| TW201445754A (en) | Solar cell or tandem solar cell and method of forming same | |
| CN103850372B (en) | Solar energy battery curtain wall | |
| CN101908582A (en) | Method for manufacturing transparent thin-film solar cell component | |
| CN101951189A (en) | Large area fluorescent concentrator solar cell system | |
| CN106653898B (en) | A kind of CZTS solar battery | |
| CN207967053U (en) | A kind of copper indium gallium selenide perovskite lamination solar cell | |
| CN108172640B (en) | Cadmium telluride thin-film solar cell with double-sided power generation and preparation method thereof | |
| KR101266103B1 (en) | Solar cell module and manufacturing method thereof | |
| CN202259357U (en) | Copper-indium-selenium thin-film solar light-transmitting assembly | |
| CN102437237A (en) | Chalcopyrite type thin film solar cell and manufacturing method thereof | |
| CN210723052U (en) | Double-sided double-system film photovoltaic module | |
| CN203312306U (en) | Transparent solar cell | |
| CN101615640A (en) | Zinc oxide based solar battery and preparation method thereof | |
| CN101447517B (en) | Thin film type solar power current collection tube device | |
| CN104600146A (en) | Double-sided thin-film solar cell | |
| CN202601694U (en) | Three-node laminated film solar battery module | |
| CN105161556A (en) | Rare earth (Er+3) doped infrared light up-conversion effect wide spectrum solar energy battery | |
| CN201936892U (en) | Combined type thin film solar energy cell composition structure | |
| CN103137612A (en) | Solar cell module and manufacturing method thereof | |
| CN102237442B (en) | Method for manufacturing thin film solar cell ID (identification) by using laser edge deletion device | |
| CN201051505Y (en) | A mixed solar battery | |
| CN103117311A (en) | Crystal-silicon solar cell with transparent electrodes | |
| CN106571409A (en) | Ti-CGSe+CIGS wide spectrum film solar cell | |
| CN102185001B (en) | Structure and manufacturing of silicon-based nanometer zinc oxide powder thin film hetero-junction solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice | ||
| DD01 | Delivery of document by public notice |
Addressee: Zhao Yulan Document name: Decision of Rejection |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151216 |