CN105140388A - Three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and preparation method for three-axis anisotropic magnetic resistance - Google Patents
Three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and preparation method for three-axis anisotropic magnetic resistance Download PDFInfo
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- CN105140388A CN105140388A CN201510490503.6A CN201510490503A CN105140388A CN 105140388 A CN105140388 A CN 105140388A CN 201510490503 A CN201510490503 A CN 201510490503A CN 105140388 A CN105140388 A CN 105140388A
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Abstract
The invention provides a three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and a preparation method for the three-axis anisotropic magnetic resistance. A perpendicular magnetic resistance repair circuit specially for repairing perpendicular magnetic resistance is formed on the perpendicular magnetic resistance, so that the magnetic domain of the perpendicular magnetic resistance can be sequenced in the perpendicular direction along groove depth to ensure the stability of the perpendicular magnetic resistance; and in addition, the magnetic domain of the perpendicular magnetic resistance is sequenced in the perpendicular direction, so that the magnetic domains for involving in operation in the perpendicular direction are increased, so as to improve the sensitivity of the perpendicular magnetic resistance of the Z axis.
Description
Technical field
The present invention relates to semiconductor design and manufacture field, more particularly, the present invention relates to a kind of 3 axle anisotropic magnetoresistives improving Z axis sensitivity and preparation method thereof.
Background technology
Anisotropic magnetoresistive (AMR) transducer is the Novel magnetic power inhibition effect transducer in modern industry, AMR transducer is just becoming and is becoming more and more important, especially at up-to-date smart mobile phone, and be used widely in parking sensor, angular transducer, automatic breaking system (ABS) transducer and tyre pressure sensor in automobile industry.Except anisotropic magnetoresistive (AMR) transducer, the current major technique branch of magnetic sensor also has Hall element, huge Magnetic Sensor (GMR), tunnel junction magnet sensor (TMR) etc., but because AMR transducer has the sensitivity more much higher than hall effect sensor, and technology is more ripe than GMR and TMR on realizing, therefore the application of anisotropic magnetoresistive (AMR) transducer is more extensive than the application of other Magnetic Sensors.
3 axle anisotropic magnetoresistive (3DAMR) Magnetic Sensors provide a kind of solution measuring line position in earth magnetic field and/or displacement of the lines and Angle Position and/or angular displacement, and it can provide high spatial resolution and high accuracy, and power consumption is very low.The operation principle of AMR Magnetic Sensor is changed by measuring resistance to determine magnetic field intensity.
In the processing procedure of 3 axles (X-axis, Y-axis, Z axis) AMR, the magnetoresistance material of X-axis and Y-axis is formed in the plane, and the magnetoresistance material of Z axis needs and the plane orthogonal of X-axis and Y-axis formation, therefore, formed one with the groove (Trench) of plane orthogonal, the magnetoresistance material of Z axis to be formed in the sidewall of groove.
Fig. 1 is the vertical view of 3 axle AMR of prior art.As shown in Figure 1, first on substrate, define multiple groove 10 (only showing a groove 10 in Fig. 1), then one deck magnetoresistance material is formed on the surface of groove 10 and substrate, then, carry out first time etching, removal is positioned at the magnetic material of groove 10 lower surface and is positioned at the unwanted magnetic material of substrate surface, the vertical magnetic resistance 21 be positioned on groove 10 sidewall forming predetermined plane magnetoresistive 22 and be connected with plane magnetoresistive 22, wherein, plane magnetoresistive 22 is for the magnetic resistance of follow-up formation X-axis and Y-axis, and vertical magnetic resistance 21 is for the formation of the magnetic resistance of Z axis.
After formation 3 axle AMR, usually also can form reset circuit, as shown in fig. 1, reset circuit is metal wire 30, and it is across described groove 10 and be positioned on plane magnetoresistive 22.When resetting, along the direction of arrow, electric current is applied to metal wire 30, then produce the magnetic field of (horizontal direction along groove 10) from right to left, this magnetic field makes magnetic domain in plane magnetoresistive 22 arrange along magnetic direction, equally, the vertical magnetic resistance 21 of groove 10 sidewall arranges equally from right to left.During logical reverse current, magnetic domain then arranges accordingly from left to right.
As described above, reset circuit makes the magnetic domain of vertical magnetic resistance 21 sort in the horizontal direction along the length direction of groove 10.And for Z axis, operationally, work in the vertical direction of groove 10 depth direction in induction Z-direction magnetic field.Although what in prior art, the magnetic domain of vertical magnetic resistance 21 sorted in the horizontal direction is better, its stability is better, and the magnetic domain that can participate in work is in vertical direction fewer, causes vertical magnetic resistance 21 sensitivity of Z axis poorer.
Summary of the invention
The object of the present invention is to provide a kind of 3 axle anisotropic magnetoresistives improving Z axis sensitivity and preparation method thereof, under the prerequisite not reducing stability, the sensitivity of Z axis can be improved.
To achieve these goals, the present invention proposes a kind of 3 axle anisotropic magnetoresistives improving Z axis sensitivity, comprise: plane magnetoresistive, vertical magnetic resistance, passivation layer and vertical magnetic resistance repair circuit, described plane magnetoresistive is formed in the surface of substrate, described vertical magnetic resistance forms the sidewall surfaces of groove on the substrate, described passivation layer is formed in described vertical magnetic resistance surface, and described vertical magnetic resistance is repaired circuit and is formed on described passivation layer.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, also comprise electrode, described electrode is formed on the passivation layer outside described groove, and repairs circuit with described vertical magnetic resistance and be connected.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, also comprise plane magnetoresistive and repair circuit, described plane magnetoresistive is repaired circuit and is positioned at described substrate surface, and across described groove.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, it is metal wire that described plane magnetoresistive repairs circuit.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, it is metal wire that described vertical magnetic resistance repairs circuit.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, described passivation layer material is silicon nitride.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, the material of described plane magnetoresistive and vertical magnetic resistance is NiFe.
In the present invention, also proposed a kind of preparation method improving 3 axle anisotropic magnetoresistives of Z axis sensitivity, for the formation of 3 axle anisotropic magnetoresistives as described above, comprise step:
Substrate is provided, described substrate is formed with multiple groove;
Form plane magnetoresistive at described substrate surface, form vertical magnetic resistance at described trench sidewall surface;
Passivation layer is formed on described vertical magnetic resistance surface;
Described passivation layer is formed vertical magnetic resistance and repairs circuit.
Further, in the preparation method of 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, form described vertical magnetic resistance reparation circuits step and comprise:
Depositing metal layers on described substrate and trenched side-wall;
Etch described metal level, form vertical magnetic resistance and repair circuit and electrode, described electrode is formed on the passivation layer outside described groove, and repairs circuit with described vertical magnetic resistance and be connected.
Compared with prior art, beneficial effect of the present invention is mainly reflected in: formed on vertical magnetic resistance and repair circuit to the vertical magnetic resistance that it is repaired specially, the magnetic domain of vertical magnetic resistance can be made to sort along the vertical direction of gash depth, the stability of vertical magnetic resistance can be guaranteed, in addition, because the magnetic domain of vertical magnetic resistance sorts in the vertical direction, the magnetic domain of the work that therefore can participate in vertical direction increases, thus can improve the vertical magneto resistive sensitivity of Z axis.
Accompanying drawing explanation
Fig. 1 is the vertical view of 3 axle axle anisotropic magnetoresistives of prior art;
Fig. 2 is the vertical view of 3 axle anisotropic magnetoresistives in one embodiment of the invention;
Fig. 3 is the generalized section of 3 axle anisotropic magnetoresistive channel laterals in one embodiment of the invention.
Embodiment
3 axle anisotropic magnetoresistives and preparation method thereof below in conjunction with the sensitivity of schematic diagram improvement of the present invention Z axis are described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1 and Fig. 2, in the present embodiment, propose a kind of 3 axle anisotropic magnetoresistives improving Z axis sensitivity, comprise: plane magnetoresistive 220, vertical magnetic resistance 210, passivation layer 400 and vertical magnetic resistance repair circuit 510, described plane magnetoresistive 220 is formed in the surface of substrate, described vertical magnetic resistance 210 forms the sidewall surfaces of groove 100 on the substrate, and described passivation layer 400 is formed in described vertical magnetic resistance 510 surface, and described vertical magnetic resistance is repaired circuit 510 and is formed on described passivation layer 400.
In the present embodiment, 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity also comprise electrode 520, described electrode 520 is formed on the passivation layer 400 outside described groove 100, and repair circuit 510 with described vertical magnetic resistance and be connected, described electrode 520 is drawn for described vertical magnetic resistance is repaired circuit 510, thus electric current can be applied to it, be convenient to repair described vertical magnetic resistance 510.
In the present embodiment, 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity also comprise plane magnetoresistive and repair circuit 300, described plane magnetoresistive is repaired circuit 300 and is positioned at described substrate surface, and across described groove 100, described plane magnetoresistive repairs circuit 300 can galvanization, thus can repair plane magnetoresistive 220.
In the present embodiment, described plane magnetoresistive reparation circuit 300 and vertical magnetic resistance repair circuit 510 can be all the conducting metals such as metal wire, such as copper cash; The material of described passivation layer 400 can be the insulating barrier of silicon nitride or other routines; The material of described plane magnetoresistive 220 and vertical magnetic resistance 210 can be all NiFe.
Also proposed a kind of preparation method improving 3 axle anisotropic magnetoresistives of Z axis sensitivity in the another aspect of the present embodiment, for the formation of 3 axle anisotropic magnetoresistives as described above, comprise step:
S100: provide substrate, described substrate is formed with multiple groove;
S200: form plane magnetoresistive at described substrate surface, form vertical magnetic resistance at described trench sidewall surface;
S300: form passivation layer on described vertical magnetic resistance surface;
S400: form vertical magnetic resistance and repair circuit on described passivation layer.
Wherein, the step forming described vertical magnetic resistance reparation circuit 510 comprises:
At described substrate and groove 100 deposited on sidewalls metal level;
Etch described metal level, form vertical magnetic resistance and repair circuit 510 and electrode 520, described electrode 520 is formed on the passivation layer 400 outside described groove 100, and repairs circuit 510 with described vertical magnetic resistance and be connected.
When 3 axle anisotropic magnetoresistives carry out work:
During normal reset, circuit 300 galvanization is repaired to plane magnetoresistive, the magnetic field that plane magnetoresistive repairs circuit 300 generation makes the vertical magnetic resistance 210 on the plane magnetoresistive 220 on surface and groove 100 sidewall carry out the arrangement of magnetic domain along groove 100 transverse horizontal direction, thus increase the stability of plane magnetoresistive 220 and groove 100, and improve the sensitivity of plane magnetoresistive 220;
After normal reset terminates, circuit 510 galvanization is repaired to vertical magnetic resistance, thus the magnetic field produced along groove 100 degree of depth vertical direction, the vertical magnetic resistance 210 of groove 100 sidewall is made to carry out carrying out along groove 100 degree of depth vertical direction arrangement of magnetic domain, make the vertical magnetic resistance 210 of groove 100 sidewall have more magnetic domain along the arrangement of groove 100 degree of depth vertical direction, be conducive to improving the sensitivity of vertical magnetic resistance 210 on Z axis.
To sum up, in 3 axle anisotropic magnetoresistives of the improvement Z axis sensitivity provided in the embodiment of the present invention and preparation method thereof, vertical magnetic resistance is formed and specially circuit is repaired to the vertical magnetic resistance that it is repaired, the magnetic domain of vertical magnetic resistance can be made to sort along the vertical direction of gash depth, the stability of vertical magnetic resistance can be guaranteed, in addition, because the magnetic domain of vertical magnetic resistance sorts in the vertical direction, the magnetic domain of the work that therefore can participate in vertical direction increases, thus can improve the vertical magneto resistive sensitivity of Z axis.
Above are only the preferred embodiments of the present invention, any restriction is not played to the present invention.Any person of ordinary skill in the field; in the scope not departing from technical scheme of the present invention; the technical scheme disclose the present invention and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from technical scheme of the present invention, still belong within protection scope of the present invention.
Claims (9)
1. one kind is improved 3 axle anisotropic magnetoresistives of Z axis sensitivity, it is characterized in that, comprise: plane magnetoresistive, vertical magnetic resistance, passivation layer and vertical magnetic resistance repair circuit, described plane magnetoresistive is formed in the surface of substrate, described vertical magnetic resistance forms the sidewall surfaces of groove on the substrate, described passivation layer is formed in described vertical magnetic resistance surface, and described vertical magnetic resistance is repaired circuit and is formed on described passivation layer.
2. the as claimed in claim 13 axle anisotropic magnetoresistives improving Z axis sensitivity, it is characterized in that, also comprise electrode, described electrode is formed on the passivation layer outside described groove, and repairs circuit with described vertical magnetic resistance and be connected.
3. the 3 axle anisotropic magnetoresistives improving Z axis sensitivity as claimed in claim 1, is characterized in that, also comprise plane magnetoresistive and repair circuit, and described plane magnetoresistive is repaired circuit and is positioned at described substrate surface, and across described groove.
4. the 3 axle anisotropic magnetoresistives improving Z axis sensitivity as claimed in claim 3, is characterized in that, it is metal wire that described plane magnetoresistive repairs circuit.
5. the 1 axle anisotropic magnetoresistive improving Z axis sensitivity as claimed in claim 1, is characterized in that, it is metal wire that described vertical magnetic resistance repairs circuit.
6. the 3 axle anisotropic magnetoresistives improving Z axis sensitivity as claimed in claim 1, it is characterized in that, described passivation layer material is silicon nitride.
7. the 3 axle anisotropic magnetoresistives improving Z axis sensitivity as claimed in claim 1, is characterized in that, the material of described plane magnetoresistive and vertical magnetic resistance is NiFe.
8. improve a preparation method for 3 axle anisotropic magnetoresistives of Z axis sensitivity, for the formation of 3 axle anisotropic magnetoresistives as described in claim 1, it is characterized in that, comprise step:
Substrate is provided, described substrate is formed with multiple groove;
Form plane magnetoresistive at described substrate surface, form vertical magnetic resistance at described trench sidewall surface;
Passivation layer is formed on described vertical magnetic resistance surface;
Described passivation layer is formed vertical magnetic resistance and repairs circuit.
9. the preparation method improving 3 axle anisotropic magnetoresistives of Z axis sensitivity as claimed in claim 8, is characterized in that, forms described vertical magnetic resistance reparation circuits step and comprises:
Depositing metal layers on described substrate and trenched side-wall;
Etch described metal level, form vertical magnetic resistance and repair circuit and electrode, described electrode is formed on the passivation layer outside described groove, and repairs circuit with described vertical magnetic resistance and be connected.
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| CN201510490503.6A CN105140388B (en) | 2015-08-11 | 2015-08-11 | Improve 3 axle anisotropic magnetoresistives of Z axis sensitivity and preparation method thereof |
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| CN201510490503.6A CN105140388B (en) | 2015-08-11 | 2015-08-11 | Improve 3 axle anisotropic magnetoresistives of Z axis sensitivity and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11345409A (en) * | 1995-09-19 | 1999-12-14 | Alps Electric Co Ltd | Magnetoresistive head |
| CN104483638A (en) * | 2014-12-31 | 2015-04-01 | 上海矽睿科技有限公司 | Magnetic sensing device capable of improving magnetic induction intensity in Z-axis direction and manufacturing method thereof |
| CN104485415A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetic resistance structure |
| CN104505460A (en) * | 2014-12-25 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Preparing method of triaxial anisotropic magnetoresistor |
| CN104681713A (en) * | 2014-12-25 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetoresistance and preparing method for improving Z-axis sensitivity of anisotropic magnetoresistance |
-
2015
- 2015-08-11 CN CN201510490503.6A patent/CN105140388B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11345409A (en) * | 1995-09-19 | 1999-12-14 | Alps Electric Co Ltd | Magnetoresistive head |
| CN104485415A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetic resistance structure |
| CN104505460A (en) * | 2014-12-25 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Preparing method of triaxial anisotropic magnetoresistor |
| CN104681713A (en) * | 2014-12-25 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetoresistance and preparing method for improving Z-axis sensitivity of anisotropic magnetoresistance |
| CN104483638A (en) * | 2014-12-31 | 2015-04-01 | 上海矽睿科技有限公司 | Magnetic sensing device capable of improving magnetic induction intensity in Z-axis direction and manufacturing method thereof |
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