CN105140388B - Improve 3 axle anisotropic magnetoresistives of Z axis sensitivity and preparation method thereof - Google Patents
Improve 3 axle anisotropic magnetoresistives of Z axis sensitivity and preparation method thereof Download PDFInfo
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- CN105140388B CN105140388B CN201510490503.6A CN201510490503A CN105140388B CN 105140388 B CN105140388 B CN 105140388B CN 201510490503 A CN201510490503 A CN 201510490503A CN 105140388 B CN105140388 B CN 105140388B
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Abstract
The present invention proposes a kind of 3 axle anisotropic magnetoresistives for improving Z axis sensitivity and preparation method thereof, the special vertical magnetic resistance repaired to it is formed on vertical magnetic resistance and repairs circuit, the magnetic domain of vertical magnetic resistance can be made to be ranked up along the vertical direction of gash depth, it is able to ensure that the stability of vertical magnetic resistance, in addition, because the magnetic domain of vertical magnetic resistance sorts in vertical direction, therefore it may participate in the magnetic domain of work in vertical direction and increase, so as to improve the vertical magneto resistive sensitivity of Z axis.
Description
Technical field
The present invention relates to semiconductor design and manufacture field, it is more particularly related to which a kind of improve Z axis sensitivity
3 axle anisotropic magnetoresistives and preparation method thereof.
Background technology
Anisotropic magnetoresistive (AMR) sensor is the novel magnetic power inhibition effect sensor in modern industry, and AMR sensor is just
Become to become more and more important, especially in newest smart mobile phone, and parking sensor in automobile industry, angular transducer, from
It is used widely in dynamic brakes (ABS) sensor and tyre pressure sensor.Except anisotropic magnetoresistive (AMR) sensor
Outside, there be Hall sensor, huge Magnetic Sensor (GMR), tunnel junction magnet sensor in the current major technique branch of magnetic sensor
(TMR) etc., but because AMR sensor has the sensitivity more much higher than hall effect sensor, and technology realize it is upper than GMR with
TMR is more ripe, therefore application being more widely applied than other Magnetic Sensors of anisotropic magnetoresistive (AMR) sensor.
3 axle anisotropic magnetoresistive (3DAMR) Magnetic Sensors provide line position and/or line position in a kind of measurement earth's magnetic field
Move and Angle Position and/or the solution of angular displacement, it can provide high spatial resolution and high accuracy, and power consumption is very
It is low.The operation principle of AMR magnetic sensor is to determine magnetic field intensity by measuring resistance variations.
In 3 axles (X-axis, Y-axis, Z axis) AMR processing procedure, the magnetoresistance material of X-axis and Y-axis is formed in the plane, and Z axis
The plane that magnetoresistance material is needed and X-axis and Y-axis are formed is vertical, therefore, to form a groove (Trench) vertical with plane,
So as to which the magnetoresistance material of Z axis to be formed to the side wall in groove.
Fig. 1 is 3 axle AMR of prior art top view.As shown in figure 1, multiple grooves 10 are formd on substrate first
(groove 10 is only shown in Fig. 1), then forms one layer of magnetoresistance material on the surface of groove 10 and substrate, then, carries out the
Once etch, remove positioned at the magnetic material of the lower surface of groove 10 and positioned at the unwanted magnetic material of substrate surface, shape
The vertical magnetic resistance 21 being located on the side wall of groove 10 being connected into predetermined plane magnetoresistive 22 and with plane magnetoresistive 22, wherein, put down
Face magnetic resistance 22 is used for the magnetic resistance for being subsequently formed X-axis and Y-axis, and vertical magnetic resistance 21 is used for the magnetic resistance for forming Z axis.
After 3 axle AMR are formed, reset circuit generally can be also formed, as shown in fig. 1, reset circuit is metal wire 30,
It is across the groove 10 and on plane magnetoresistive 22.When being resetted, metal wire 30 is applied along the direction of arrow
Electric current, then produce the magnetic field from right to left (along the horizontal direction of groove 10), and the magnetic field causes magnetic domain edge in plane magnetoresistive 22
Magnetic direction is arranged, equally, and the vertical magnetic resistance 21 of the side wall of groove 10 is equally arranged from right to left.Logical reverse current
When, magnetic domain is then arranged from left to right accordingly.
As described above, reset circuit causes length direction of the magnetic domain of vertical magnetic resistance 21 along groove 10 to enter in the horizontal direction
Row sequence.And for Z axis, operationally, sensing Z-direction magnetic field is acted as in the vertical direction of the depth direction of groove 10
With.Although what the magnetic domain of vertical magnetic resistance 21 sorted in the horizontal direction in the prior art is better, its stability is better, may participate in
The magnetic domain of work in vertical direction is fewer, causes the sensitivity of vertical magnetic resistance 21 of Z axis poorer.
The content of the invention
It is an object of the invention to provide a kind of 3 axle anisotropic magnetoresistives for improving Z axis sensitivity and preparation method thereof, energy
The enough sensitivity that Z axis is improved on the premise of stability is not reduced.
To achieve these goals, the present invention proposes a kind of 3 axle anisotropic magnetoresistives for improving Z axis sensitivity, including：
Plane magnetoresistive, vertical magnetic resistance, passivation layer and vertical magnetic resistance repair circuit, and the plane magnetoresistive is formed on the surface of substrate, described
Vertical magnetic resistance forms the sidewall surfaces of groove on the substrate, and the passivation layer is formed on the vertical magnetic resistance surface, described
Vertical magnetic resistance repairs circuit formation on the passivation layer.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, in addition to electrode, the electrode
Formed on the passivation layer outside the groove, and circuit is repaired with the vertical magnetic resistance and be connected.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, in addition to plane magnetoresistive reparation
Circuit, the plane magnetoresistive repairs circuit and is located at the substrate surface, and across the groove.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, the plane magnetoresistive repairs electricity
Road is metal wire.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, the vertical magnetic resistance repairs electricity
Road is metal wire.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, the passivation layer material is nitrogen
SiClx.
Further, in 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, the plane magnetoresistive and vertical
The material of magnetic resistance is NiFe.
Also, in the present invention, it is proposed that a kind of preparation method for the 3 axle anisotropic magnetoresistives for improving Z axis sensitivity, is used for
Form 3 axle anisotropic magnetoresistives as described above, including step：
There is provided and be formed with multiple grooves on substrate, the substrate；
In substrate surface formation plane magnetoresistive, vertical magnetic resistance is formed in the trench sidewall surface；
Passivation layer is formed on the vertical magnetic resistance surface；
Vertical magnetic resistance is formed on the passivation layer and repairs circuit.
Further, in the preparation method of 3 axle anisotropic magnetoresistives of described improvement Z axis sensitivity, form described
Vertical magnetic resistance, which repairs circuits step, to be included：
The deposited metal layer on the substrate and trenched side-wall；
The metal level is etched, vertical magnetic resistance is formed and repairs circuit and electrode, the electrode formation is outside the groove
On passivation layer, and it is connected with the vertical magnetic resistance reparation circuit.
Compared with prior art, the beneficial effects are mainly as follows：Formed specially to enter it on vertical magnetic resistance
The vertical magnetic resistance that row is repaired repairs circuit, the magnetic domain of vertical magnetic resistance can be made to be ranked up along the vertical direction of gash depth, energy
Enough ensure the stability of vertical magnetic resistance, further, since the magnetic domain of vertical magnetic resistance sorts in vertical direction, therefore may participate in vertical
The magnetic domain of work on direction increases, so as to improve the vertical magneto resistive sensitivity of Z axis.
Brief description of the drawings
Fig. 1 is the top view of 3 axle axle anisotropic magnetoresistives of prior art；
Fig. 2 is the top view of 3 axle anisotropic magnetoresistives in one embodiment of the invention；
Fig. 3 is the diagrammatic cross-section of 3 axle anisotropic magnetoresistive channel laterals in one embodiment of the invention.
Embodiment
3 axle anisotropic magnetoresistives below in conjunction with schematic diagram improvement of the present invention Z axis sensitivity and preparation method thereof
It is described in more detail, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change
Invention described herein, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for ability
Field technique personnel's is widely known, and is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 1 and Fig. 2 are refer to, in the present embodiment, it is proposed that a kind of 3 axle anisotropic magnetoresistives for improving Z axis sensitivity,
Including：Plane magnetoresistive 220, vertical magnetic resistance 210, passivation layer 400 and vertical magnetic resistance repair circuit 510, the shape of plane magnetoresistive 220
Into the surface in substrate, the vertical magnetic resistance 210 forms the sidewall surfaces of groove 100 on the substrate, the passivation layer 400
Formed on the vertical surface of magnetic resistance 510, the vertical magnetic resistance is repaired circuit 510 and formed on the passivation layer 400.
In the present embodiment, the 3 axle anisotropic magnetoresistives for improving Z axis sensitivity also include electrode 520, the electrode
520 form on the passivation layer 400 outside the groove 100, and are connected with the vertical magnetic resistance reparation circuit 510, the electrode
520 are used to draw in the vertical magnetic resistance reparation circuit 510, so as to apply electric current to it, are easy to the vertical magnetic resistance
510 are repaired.
In the present embodiment, the 3 axle anisotropic magnetoresistives for improving Z axis sensitivity also include plane magnetoresistive reparation circuit
300, the plane magnetoresistive repairs circuit 300 and is located at the substrate surface, and across the groove 100, the plane magnetoresistive is repaiied
Compound circuit 300 can be with galvanization, so as to be repaired to plane magnetoresistive 220.
In the present embodiment, it can be metal that the plane magnetoresistive, which repairs circuit 300 and vertical magnetic resistance reparation circuit 510,
Line, the conducting metal such as copper cash；The material of the passivation layer 400 can be silicon nitride or other conventional insulating barriers；It is described
The material of plane magnetoresistive 220 and vertical magnetic resistance 210 can be NiFe.
A kind of preparation for the 3 axle anisotropic magnetoresistives for improving Z axis sensitivity is also proposed in the another aspect of the present embodiment
Method, for forming 3 axle anisotropic magnetoresistives as described above, including step：
S100：There is provided and be formed with multiple grooves on substrate, the substrate；
S200：In substrate surface formation plane magnetoresistive, vertical magnetic resistance is formed in the trench sidewall surface；
S300：Passivation layer is formed on the vertical magnetic resistance surface；
S400：Vertical magnetic resistance is formed on the passivation layer and repairs circuit.
Wherein, forming the step of vertical magnetic resistance repairs circuit 510 includes：
In the substrate and the deposited on sidewalls metal level of groove 100；
The metal level is etched, vertical magnetic resistance is formed and repairs circuit 510 and electrode 520, the electrode 520 is formed described
On passivation layer 400 outside groove 100, and it is connected with the vertical magnetic resistance reparation circuit 510.
When 3 axle anisotropic magnetoresistives are operated：
During normal reset, the galvanization of circuit 300 is repaired to plane magnetoresistive, plane magnetoresistive repairs the magnetic field that circuit 300 is produced
So that the vertical magnetic resistance 210 on plane magnetoresistive 220 and the side wall of groove 100 on surface enters along the transverse horizontal direction of groove 100
The arrangement of row magnetic domain, so as to increase the stability of plane magnetoresistive 220 and groove 100, and improves the sensitive of plane magnetoresistive 220
Degree；
After normal reset terminates, the galvanization of circuit 510 is repaired to vertical magnetic resistance, so as to produce vertical along the depth of groove 100
The magnetic field in direction so that the vertical magnetic resistance 210 of the side wall of groove 100 carried out along the depth vertical direction of groove 100 row of magnetic domain
Row, making the vertical magnetic resistance 210 of the side wall of groove 100, there are more magnetic domains to be arranged along the depth vertical direction of groove 100, be conducive to carrying
The sensitivity of vertical magnetic resistance 210 on high Z axis.
To sum up, in 3 axle anisotropic magnetoresistives of improvement Z axis sensitivity provided in an embodiment of the present invention and preparation method thereof
In, the special vertical magnetic resistance repaired to it is formed on vertical magnetic resistance and repairs circuit, the magnetic domain edge of vertical magnetic resistance can be made
The vertical direction of gash depth is ranked up, it can be ensured that the stability of vertical magnetic resistance, further, since the magnetic domain of vertical magnetic resistance exists
Vertical direction sorts, therefore may participate in the magnetic domain of work in vertical direction and increase, so as to improve the vertical magnetic resistance of Z axis
Sensitivity.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (8)
1. a kind of preparation method for the 3 axle anisotropic magnetoresistives for improving Z axis sensitivity, for forming a kind of 3 axle anisotropic magnetic
Resistance, it is characterised in that including step：
There is provided and be formed with multiple grooves on substrate, the substrate；
In substrate surface formation plane magnetoresistive, vertical magnetic resistance is formed in multiple trench sidewall surfaces；
Passivation layer is formed on the vertical magnetic resistance surface；
Vertical magnetic resistance is formed on the passivation layer and repairs circuit, including：The deposited metal layer on the substrate and trenched side-wall；
The metal level is etched, vertical magnetic resistance is formed and repairs circuit and electrode, the electrode is formed on the passivation layer outside the groove,
And be connected with the vertical magnetic resistance reparation circuit.
2. the preparation method of 3 axle anisotropic magnetoresistives of Z axis sensitivity is improved as claimed in claim 1, it is characterised in that bag
Include：Plane magnetoresistive, vertical magnetic resistance, passivation layer and vertical magnetic resistance repair circuit, and the plane magnetoresistive formation is on the surface of substrate, institute
The sidewall surfaces that vertical magnetic resistance forms groove on the substrate are stated, the passivation layer formation is on the vertical magnetic resistance surface, institute
State vertical magnetic resistance and repair circuit formation on the passivation layer.
3. the preparation method of 3 axle anisotropic magnetoresistives of Z axis sensitivity is improved as claimed in claim 2, it is characterised in that also
Including electrode, the electrode formation is connected on the passivation layer outside the groove with the vertical magnetic resistance reparation circuit.
4. the preparation method of 3 axle anisotropic magnetoresistives of Z axis sensitivity is improved as claimed in claim 2, it is characterised in that also
Circuit is repaired including plane magnetoresistive, the plane magnetoresistive repairs circuit and is located at the substrate surface, and across the groove.
5. the preparation method of 3 axle anisotropic magnetoresistives of Z axis sensitivity is improved as claimed in claim 4, it is characterised in that institute
It is metal wire to state plane magnetoresistive and repair circuit.
6. the preparation method of 3 axle anisotropic magnetoresistives of Z axis sensitivity is improved as claimed in claim 2, it is characterised in that institute
It is metal wire to state vertical magnetic resistance and repair circuit.
7. the preparation method of 3 axle anisotropic magnetoresistives of Z axis sensitivity is improved as claimed in claim 2, it is characterised in that institute
Passivation layer material is stated for silicon nitride.
8. the preparation method of 3 axle anisotropic magnetoresistives of Z axis sensitivity is improved as claimed in claim 2, it is characterised in that institute
The material for stating plane magnetoresistive and vertical magnetic resistance is NiFe.
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| CN201510490503.6A CN105140388B (en) | 2015-08-11 | 2015-08-11 | Improve 3 axle anisotropic magnetoresistives of Z axis sensitivity and preparation method thereof |
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| CN201510490503.6A CN105140388B (en) | 2015-08-11 | 2015-08-11 | Improve 3 axle anisotropic magnetoresistives of Z axis sensitivity and preparation method thereof |
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| CN105140388B true CN105140388B (en) | 2017-09-26 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104483638A (en) * | 2014-12-31 | 2015-04-01 | 上海矽睿科技有限公司 | Magnetic sensing device capable of improving magnetic induction intensity in Z-axis direction and manufacturing method thereof |
| CN104485415A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetic resistance structure |
| CN104505460A (en) * | 2014-12-25 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Preparing method of triaxial anisotropic magnetoresistor |
| CN104681713A (en) * | 2014-12-25 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetoresistance and preparing method for improving Z-axis sensitivity of anisotropic magnetoresistance |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11345409A (en) * | 1995-09-19 | 1999-12-14 | Alps Electric Co Ltd | Magnetoresistive head |
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2015
- 2015-08-11 CN CN201510490503.6A patent/CN105140388B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485415A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetic resistance structure |
| CN104505460A (en) * | 2014-12-25 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Preparing method of triaxial anisotropic magnetoresistor |
| CN104681713A (en) * | 2014-12-25 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetoresistance and preparing method for improving Z-axis sensitivity of anisotropic magnetoresistance |
| CN104483638A (en) * | 2014-12-31 | 2015-04-01 | 上海矽睿科技有限公司 | Magnetic sensing device capable of improving magnetic induction intensity in Z-axis direction and manufacturing method thereof |
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