CN105097992B - 一种光敏电容器的制备方法 - Google Patents
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- 239000003990 capacitor Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000003989 dielectric material Substances 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 26
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- 238000000576 coating method Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000008859 change Effects 0.000 claims abstract description 6
- 238000010792 warming Methods 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910002113 barium titanate Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- IDIJOAIHTRIPRC-UHFFFAOYSA-J hexaaluminum;sodium;2,2,4,4,6,6,8,8,10,10,12,12-dodecaoxido-1,3,5,7,9,11-hexaoxa-2,4,6,8,10,12-hexasilacyclododecane;iron(2+);triborate;tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Fe+2].[Fe+2].[Fe+2].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-][Si]1([O-])O[Si]([O-])([O-])O[Si]([O-])([O-])O[Si]([O-])([O-])O[Si]([O-])([O-])O[Si]([O-])([O-])O1 IDIJOAIHTRIPRC-UHFFFAOYSA-J 0.000 claims description 3
- 229910000246 schorl Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 231100000289 photo-effect Toxicity 0.000 description 5
- 229910002370 SrTiO3 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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Abstract
一种光敏电容器的制备方法，先将具有小极化子效应的光敏材料压制成片状后烧制成陶瓷，并制成介电材料层；然后在介电材料层的两侧设置导电银浆镀层；取两片导电玻璃并置于介电材料层两侧，使导电玻璃上的导电膜与导电银浆镀层接触，所述导电玻璃和导电银浆镀层均由透光材料制成，以便使光线能够透过导电玻璃和导电银浆镀层照射在介电材料层上，从而改变其介电常数；将介电材料层和导电玻璃固定好后置于热处理设备中升温至250—350℃进行热处理，热处理结束后降至室温即制得光敏电容器。该方法制备的光敏电容器的电容大小可以通过外部照射光线的强度来调节,可用作各类电子器件的调频部件，或者用来制作光电探测器。
Description
技术领域
本发明涉及一种电容器，具体的说是一种光敏电容器的制备方法。
背景技术
光电技术在国民经济、军事安全、科学研究等领域有着广泛应用。光电技术的物理基础是各种光电效应。通常，光电效应分为外光电效应和内光电效应。外光电效应指在光的照射下，金属或半导体内的电子逸出表面向外发射的现象，主要应用有光电管和光电倍增管等。内光电效应指在光的照射下，半导体内部产生电子-空穴对所引发的电效应。内光电效应比较复杂，常见的有光电导效应、光伏效应等。光电导效应的主要应用有光敏电阻、光电导摄像管等；光伏效应的主要应用有光伏电池、光(电)敏二极管、光(电)敏三极管等。
光电容效应是一种内光电效应，指在光的照射下，半导体/绝缘体的介电常数或电容常数发生变化的现象。通常条件下，多数半导体/绝缘体的光电容效应不显著。但在较强辐射条件下（如航空航天）或者某些特殊材料 (如ZnS-CdS、SrTiO3、有机聚合物)里，光电容效应非常显著[H.Kallman, B. Kramer, and A. Perlmutter, Phys. Rev. 89, 700(1953)；S.Kronenberg and C.A.Accardo，Phys.Rev.101，989(1956)；T.Hasegawa，S.Mouri，Y.Yamada,and K.Tanaka,J.Phys. Soc.Jpn 72,41 (2003)]。在精密电子仪器设计中，有必要考虑光电容效应的影响。例如，航空/航天仪器中的电容元件在太阳光照射下可能发生电容数值的较大改变，进而影响甚至破坏仪器的正常工作状态，因此需要对其电容元件做必要的避光防护。在太阳能光电转换领域,光电容效应也有着重要潜在应用[R.W.Glazebrook and A.Thomas, J. Chem. Soc.Faraday Trans.II78, 2053 (1982)]。
在某些特殊的氧化物半导体中，如金红石相TiO2、MnO2、WO3、BaTiO3、SrTiO3等，存在小极化子类型的载流子。所谓小极化子指半导体中电子/空穴与其周边小范围的晶格发生强烈耦合而形成的一种准粒子。在强烈的电子-声子耦合作用下，小极化子类型半导体能带边的光生电子/空穴将衰变为位于带隙中的小极化子[G.L. Li, W.X. Li, and C. Li,Phys. Rev. B 82, 235109 (2010)]。与普通半导体比较，小极化子类型半导体具有一些特殊的光电效应，如光伏效应[李国岭、李立本、王丹丹、曹京晓、王赵武，一种基于界面极化子效应的半导体太阳能电池及其制备方法，ZL201210028953.X，2014.06]。
发明内容
本发明所要解决的技术问题是提供一种光敏电容器的制备方法。
本发明为解决上述技术问题所采用的技术方案是：一种光敏电容器的制备方法，先将具有小极化子效应的光敏材料压制成片状后烧制成陶瓷，并制成介电材料层；然后在介电材料层的两侧设置导电银浆镀层；取两片导电玻璃并置于介电材料层两侧，使导电玻璃上的导电膜与导电银浆镀层接触，所述导电玻璃和导电银浆镀层均由透光材料制成，以便使光线能够透过导电玻璃和导电银浆镀层照射在介电材料层上，从而改变其介电常数；将介电材料层和导电玻璃固定好后置于热处理设备中升温至250—350℃进行热处理，热处理结束后降至室温即制得光敏电容器。
所述的具有小极化子效应的光敏材料为金红石相二氧化钛、钛酸钡或钛酸锶。
热处理时的升温速率为1—2℃/分钟。
热处理过程中升温结束后的保温时间为45—80分钟。
经研究发现，常用的介电材料如TiO2、BaTiO3 、SrTiO3等，属于小极化子类型半导体。在光照条件下，该类介电材料里的光生小极化子将显著增强其介电常数。由该类介电材料组成的电容器可作为光敏电容器，具有重要的工业应用和学术研究价值。
当入射光的能量大于半导体带隙时，半导体价带电子将被激发到导带。处于导带中的电子在声子协助下，将在10-12 s时间尺度内衰减到导带底，成为光生载流子。对于普通半导体，光生电子/空穴的寿命为10-9 s量级。对于小极化子类型的半导体，导带中的电子将停留在能量更低的小极化子能级上而非导带底。处于小极化子能级的载流子其寿命相对较长(10-3 s甚至s量级)。
介电测量的频率范围通常为102—106 Hz，对应的介电响应时间为10-6—10-2 s。因此普通半导体中光生载流子的寿命相对上述特征时间太短，如果不考虑空间电荷极化效应，光生载流子对介电常数的贡献可以忽略。但对于小极化子类型的半导体而言，其光生载流子即小极化子的寿命相对该特征时间足够长。另外，小极化子之间或者小极化子与晶格中的离子之间会形成电偶极子。在外电场作用下，这些电偶极子可以发生定向排列。因此，在小极化子类型的半导体中，光照可以提高半导体内的电偶极子浓度，进而增大介电常数。
本发明的有益效果是：提供了一种光敏电容器的制备方法，该方法制备的光敏电容器的电容大小可以通过外部照射光线的强度来调节。从而可以通过外接电路激发合适的LED光源，用LED光源产生的光来控制电容器电容的大小，可用作各类电子器件的调频部件，或者用来制作光电探测器。将介电材料层和导电玻璃复合固定后进行热处理，能够使其接触面在一定程度上软化，能够提高两者接触的紧密性，从而提高电容器的工作性能。
附图说明
图1是光敏电容器的结构示意图。
图中标记：111和121为封装层，112和122为导电层，211为介电材料层，311表示入射光方向，411为正极引线，412为负极引线。
具体实施方式
以下结合附图具体说明本发明的实施方式。
本发明所要制备的光敏电容器具有一介电材料层211，介电材料层采用具有小极化子效应的光敏材料（例如研磨纯度99.9%的多晶小极化子氧化物原料金红石相二氧化钛、钛酸钡、钛酸锶等）制成。在介电材料层211的两侧均依次设有导电层和封装层，导电层与介电材料层紧密贴合，用于连接电极和电路。封装层用于保护其中的导电层和介电材料层，并起到支撑固定的作用。为了使介电材料层能够随外界照射光强度的变化而改变介电常数，所述介电材料层一侧或两侧的导电层及封装层应该由能够透过光线的透光材料构成。例如仅一侧封装层121和导电层122为透过材料，而另一侧的封装层111和导电层112不透光，或者两侧的导电层112、122及封装层111、121均为透光材料。其具体材料可以采用导电玻璃，其中的玻璃板基体作为封装层。导电层则有导电玻璃上的导电膜和镀在介电材料层表面的导电银浆共同构成。导电银浆应选用透明型银浆，而导电玻璃上的导电膜可以是ITO、ZnO薄膜或AZO薄膜。为便于连接外部电路，在介电材料层两侧的导电层还分别连接有正极引线和负极引线。
其具体制作步骤为：（1）、先将具有小极化子效应的光敏材料加溶剂研磨后压成片状, 然后经烧制制成片状陶瓷，烧制时的技术参数可以参照现有的烧制工艺，该烧制成的片状陶瓷即为介电材料层；（2）、通过涂抹、喷涂或丝网印刷的方法在介电材料层的两侧设置导电银浆镀层；（3）、取两片导电玻璃并置于介电材料层两侧，使导电玻璃上的导电膜与导电银浆镀层接触；（4）、将介电材料层和导电玻璃固定好后置于热处理设备中升温至250—350℃进行热处理，热处理结束后降至室温即制得光敏电容器。
在上述制备方法中，由于烧制成的介电材料层表面难免会凹凸不平，通过设置导电银浆镀层能够形成平整的表面，利于导电玻璃与其紧密接触。而采用热处理的方法能够使其接触面在一定程度上软化，能够进一步提高两者接触的紧密性，从而提高电传导的可靠性及电容器的工作性能。热处理过程中，升温速率可以为1—2℃/分钟，升温结束后的保温45—80分钟即可停火并自然冷却至室温。正极引线和负极引线可以在导电玻璃与介电材料层复合之前或复合后连接在导电膜或导电银浆上。
Claims (4)
1.一种光敏电容器的制备方法，其特征在于：所述光敏电容器的电容大小可以通过外部照射光线的强度来调节，先将具有小极化子效应的光敏材料压制成片状后烧制成陶瓷，并制成介电材料层；然后在介电材料层的两侧设置导电银浆镀层；取两片导电玻璃并置于介电材料层两侧，使导电玻璃上的导电膜与导电银浆镀层接触，所述导电玻璃和导电银浆镀层均由透光材料制成，以便使光线能够透过导电玻璃和导电银浆镀层照射在介电材料层上，从而改变其介电常数；将介电材料层和导电玻璃固定好后置于热处理设备中升温至250—350℃进行热处理，热处理结束后降至室温即制得光敏电容器。
2.如权利要求1所述的一种光敏电容器的制备方法，其特征在于：所述的具有小极化子效应的光敏材料为金红石相二氧化钛、钛酸钡或钛酸锶。
3.如权利要求1所述的一种光敏电容器的制备方法，其特征在于：热处理时的升温速率为1—2℃/分钟。
4.如权利要求1所述的一种光敏电容器的制备方法，其特征在于：热处理过程中升温结束后的保温时间为45—80分钟。
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| US2985757A (en) * | 1956-10-05 | 1961-05-23 | Columbia Broadcasting Syst Inc | Photosensitive capacitor device and method of producing the same |
| CN1505820A (zh) * | 2002-01-28 | 2004-06-16 | 捷时雅株式会社 | 形成光敏电介体的组合物,以及利用该组合物的贴花薄膜、电介体和电子元件 |
| CN101777423A (zh) * | 2010-03-16 | 2010-07-14 | 彩虹集团公司 | 一种环保型陶瓷电容器用电极银浆的浆制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2985757A (en) * | 1956-10-05 | 1961-05-23 | Columbia Broadcasting Syst Inc | Photosensitive capacitor device and method of producing the same |
| CN1505820A (zh) * | 2002-01-28 | 2004-06-16 | 捷时雅株式会社 | 形成光敏电介体的组合物,以及利用该组合物的贴花薄膜、电介体和电子元件 |
| CN101777423A (zh) * | 2010-03-16 | 2010-07-14 | 彩虹集团公司 | 一种环保型陶瓷电容器用电极银浆的浆制备方法 |
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